CN101409301B - Solid state imaging device, its manufacturing method, and imaging device - Google Patents
Solid state imaging device, its manufacturing method, and imaging device Download PDFInfo
- Publication number
- CN101409301B CN101409301B CN200810161899XA CN200810161899A CN101409301B CN 101409301 B CN101409301 B CN 101409301B CN 200810161899X A CN200810161899X A CN 200810161899XA CN 200810161899 A CN200810161899 A CN 200810161899A CN 101409301 B CN101409301 B CN 101409301B
- Authority
- CN
- China
- Prior art keywords
- layer
- oxide
- photographic department
- solid state
- image pickup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000007787 solid Substances 0.000 title claims abstract description 208
- 238000003384 imaging method Methods 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 169
- 238000006243 chemical reaction Methods 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims description 211
- 230000002093 peripheral effect Effects 0.000 claims description 125
- 230000004888 barrier function Effects 0.000 claims description 114
- 238000004581 coalescence Methods 0.000 claims description 85
- 239000011800 void material Substances 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 66
- 238000012545 processing Methods 0.000 claims description 58
- 239000004065 semiconductor Substances 0.000 claims description 57
- 230000005693 optoelectronics Effects 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 238000000231 atomic layer deposition Methods 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 26
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 26
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- 229910052735 hafnium Inorganic materials 0.000 claims description 15
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- BRGOCSWOKBOIOJ-UHFFFAOYSA-N N.[O-2].[Hf+4] Chemical compound N.[O-2].[Hf+4] BRGOCSWOKBOIOJ-UHFFFAOYSA-N 0.000 claims description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 13
- UPEMFLOMQVFMCZ-UHFFFAOYSA-N [O--].[O--].[O--].[Pm+3].[Pm+3] Chemical compound [O--].[O--].[O--].[Pm+3].[Pm+3] UPEMFLOMQVFMCZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 13
- GEZAXHSNIQTPMM-UHFFFAOYSA-N dysprosium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Dy+3].[Dy+3] GEZAXHSNIQTPMM-UHFFFAOYSA-N 0.000 claims description 13
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910001940 europium oxide Inorganic materials 0.000 claims description 13
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 claims description 13
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 13
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 13
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 claims description 13
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 13
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 claims description 13
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims description 13
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 claims description 13
- ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 238000009825 accumulation Methods 0.000 abstract description 13
- 230000008901 benefit Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 821
- 230000015572 biosynthetic process Effects 0.000 description 67
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 52
- 229910000449 hafnium oxide Inorganic materials 0.000 description 51
- 230000006870 function Effects 0.000 description 34
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 28
- 238000005229 chemical vapour deposition Methods 0.000 description 25
- 238000005473 Guinier-Preston zone Methods 0.000 description 24
- 230000000694 effects Effects 0.000 description 24
- 238000002513 implantation Methods 0.000 description 24
- 238000005260 corrosion Methods 0.000 description 23
- 230000007797 corrosion Effects 0.000 description 23
- 230000005684 electric field Effects 0.000 description 23
- 239000003550 marker Substances 0.000 description 20
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 238000001914 filtration Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 230000003595 spectral effect Effects 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 238000007639 printing Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 7
- 238000005457 optimization Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- 210000002381 plasma Anatomy 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- IJJMASPNDCLGHG-UHFFFAOYSA-N CC[Hf](CC)(CC)(CC)NC Chemical compound CC[Hf](CC)(CC)(CC)NC IJJMASPNDCLGHG-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910017583 La2O Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000002520 cambial effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Abstract
The invention discloses a solid state imaging device having a light sensing section that performs photoelectric conversion of incident light and an imaging device, including: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. According to the solid image device of the invention, dark current is reduced, noises in the images are reduced, as a result, the invention has the advantages of high image.
Description
The cross reference of related application
The present invention is contained in the theme of No. the 2007-265287th, the Japanese patent application submitted to Japan Office on October 11st, 2007, and its full content is incorporated into this, as a reference.
Technical field
The present invention relates to a kind of solid state image pickup device, its manufacture method and imaging device that can suppress the dark current generation.
Background technology
Solid state image pickup device such as CCD (charge coupled device) and COMS imageing sensor is widely used in video camera, digital camera etc.In all types of solid state image pickup devices, susceptibility improves and reducing noise is important problem.
Especially, do not having under the state of incident light, even the pure signal electric charge that does not exist the opto-electronic conversion by incident light to generate, but when the dark current that produces as the dark current of Weak current or due to the interfacial state on the interface between photographic department and upper strata (interface state) that the electric charge that produces due to the tiny flaw in the substrate interface of light receiving surface (electronics) is used as that signal when input detect, be the noise that should be lowered in solid state image pickup device.
For the technology of the generation of the dark current that suppresses to be caused by interfacial state, for example, as shown in Figure 42 (2), used the P that has by on photographic department (for example, photodiode) 12
+The embedded type photoelectric diode structure of the void coalescence layer 23 that layer consists of.In addition, in this manual, the embedded type photoelectric diode structure is known as HAD (void coalescence diode) structure.As shown in Figure 42 (1), in the structure that the HAD structure is not provided, the electronics that produces due to interfacial state flows into photodiode as dark current.On the other hand, as shown in Figure 38 (2), in the HAD structure, suppress from the generation of interfaces electronics by the void coalescence layer 23 that is formed on the interface.In addition, though from generation of interfaces electric charge (electronics), but this electric charge (electronics) does not flow into the N as photographic department 12 yet
+The accumulation section of the potential well of layer, but flow into the P that has a large amount of holes
+The void coalescence layer 23 of layer.Therefore, can eliminate electric charge (electronics).As a result, owing to can prevent that electric charge due to generation of interfaces is used as dark current and detects, thereby can suppress due to the caused dark current of interfacial state.
About the formation method of HAD structure, normally pass the thermal oxide layer or the CVD oxide layer that form on substrate and form P
+Layer (for example, boron (B) or boron difluoride (BF
2)) carry out the Implantation of impurity, thus by annealing to activate the impurity that injects, then form the p-type district near interface.But in order to activate the impurity that adulterates, the heat treatment under the high temperature more than 700 ℃ is essential.Therefore, be difficult to form the void coalescence layer with Implantation in the K cryogenic treatment below 400 ℃.Equally, in the situation that expect to avoid at high temperature long-time activation for the diffusion that suppresses dopant, the void coalescence layer formation method that needs to carry out Implantation and annealing is inadvisable.
In addition, when being formed on the silica that forms on the upper strata of photographic department or silicon nitride with low-temperature plasma CVD method, for example, and the layer that forms under high temperature and the interface phase ratio between light receiving surface, interfacial state occurs deteriorated.The deteriorated dark current that increased of interfacial state.
As mentioned above, in the situation that Implantation and annealing in process under high temperature are avoided in expectation, not only can not form by known Implantation the void coalescence layer, and dark current is by further deteriorated.In order to address this problem, need to form with the additive method that is not based on the Implantation in correlation technique the void coalescence layer.
For example, disclosed a kind of like this technology, wherein, the charged particle that has an identical polar with films of opposite conductivity is embedded in the insulating barrier that is formed by silica on the photo-electric conversion element that has with the conduction type of the conductivity type opposite of formed semiconductor region in semiconductor region, thereby promote the current potential on the surface of photoelectric conversion part, and form inversion layer, result on this surface, reduced the generation (for example, with reference to JP-A-1-256168) of dark current by the loss that prevents the surface.Yet, in superincumbent technology, charged particle need to be embedded the technology of insulating barrier, but not know to use which kind of embedded technology.In addition, for as usually using in nonvolatile memory, electric charge being injected insulating barrier from the outside, need to be used to the electrode of iunjected charge.Even electric charge can be injected from the outside under the contactless state that does not use electrode, but the electric charge of catching in insulating barrier can not be released.Therefore, charge holding performance becomes again problem.For this reason, have the High Performance Insulation layer of very high charge holding performance due to needs, thereby be difficult to realize insulating barrier.
Summary of the invention
In order to form sufficient void coalescence layer with high concentration to the Implantation in photographic department (photoelectric conversion part) by carrying out, because photographic department is destroyed due to Implantation, so must carry out high annealing.But, in this case, the diffusion of impurity can occur, and light transfer characteristic is deteriorated.On the other hand, when in order to reduce due to the caused destruction of Implantation to carry out Implantation with low concentration, the concentration of void coalescence layer reduces.As a result, the void coalescence layer does not have sufficient void coalescence layer function.That is, be difficult to realize sufficient void coalescence layer and reduce dark current, also the diffusion by inhibition of impurities keeps desired light transfer characteristic simultaneously.
In view of the above problems, expectation realizes sufficient void coalescence layer and reduces dark current.
According to an embodiment of the invention, the solid state image pickup device (the first solid state image pickup device) with photographic department of the opto-electronic conversion of carrying out incident light comprising: the interfacial state that is formed on the light receiving surface of photographic department reduces layer; Be formed on the layer with negative electrical charge on interfacial state reduction layer; With the void coalescence layer on the light receiving surface that is formed on photographic department.
In the first above-mentioned solid state image pickup device, formed the layer with negative electrical charge on layer owing to reducing in interfacial state, so the electric field by being produced by negative electrical charge has fully formed the void coalescence layer on the surface of the light receiving surface side of photographic department.Therefore, suppressed from generation of interfaces electric charge (electronics).In addition, though from generation of interfaces electric charge (electronics), these electric charges (electronics) can not flow in photographic department the accumulation section as potential well yet, but flow into the void coalescence layer that has a large amount of holes.As a result, can eliminate electric charge (electronics).As a result, owing to can prevent that the electric charge due to generation of interfaces from becoming dark current and being detected by photographic department, so suppressed the dark current that causes by interfacial state.In addition, reduce layer owing to having formed interfacial state on the light receiving surface of photographic department, so further suppressed the generation due to the caused electronics of interfacial state.As a result, suppressed to flow into photographic department due to the electronics that interfacial state produces as dark current.
According to another embodiment of the present invention, the solid state image pickup device (the second solid state image pickup device) with photographic department of the opto-electronic conversion of carrying out incident light comprising: insulating barrier is formed on the light receiving surface of photographic department, and allows incident light to see through therein; Be formed on the negative voltage applied layer on dielectric film; And be formed on void coalescence layer on the light receiving surface of photographic department.
In above-mentioned the second solid state image pickup device, owing to having formed the negative voltage applied layer on the insulating barrier on the light receiving surface that is formed on photographic department, so by the electric field that produces, fully formed the void coalescence layer on the surface of the light receiving surface side of photographic department when negative voltage is put on the negative voltage applied layer.Therefore, suppressed from generation of interfaces electric charge (electronics).In addition, though from generation of interfaces electric charge (electronics), these electric charges (electronics) can not flow in photographic department the accumulation section as potential well yet, but flow into the void coalescence layer that has a large amount of holes.As a result, can eliminate electric charge (electronics).As a result, owing to having prevented that the electric charge due to generation of interfaces from becoming dark current and being detected by photographic department, so suppressed the dark current that causes by interfacial state.
Another execution mode again according to the present invention, the solid state image pickup device (the 3rd solid state image pickup device) with photographic department of the opto-electronic conversion of carrying out incident light comprising: be formed on the insulating barrier on the light receiving surface of photographic department; And be formed on insulating barrier and have work function (workfunction) value larger than the interface of the light receiving surface side of the photographic department of carrying out opto-electronic conversion layer.
In above-mentioned the 3rd solid state image pickup device, due to the layer with work functional value larger than the interface of the light receiving surface side of the photographic department of carrying out opto-electronic conversion being provided on the insulating barrier that is formed on photographic department, so can assemble the hole in the interface of the light receiving surface side of photographic department.As a result, dark current is reduced.
Another execution mode again according to the present invention comprises the following steps in the solid state image pickup device manufacture method (the first manufacture method) that forms the photographic department of the opto-electronic conversion of carrying out incident light on semiconductor substrate: be formed with and form interfacial state on the semiconductor substrate of photographic department and reduce layer; Reduce in interfacial state and form the layer with negative electrical charge on layer; And form the void coalescence layer by this layer with negative electrical charge on the light receiving surface of photographic department.
In this solid state image pickup device manufacture method (the first manufacture method), formed the layer with negative electrical charge on layer owing to reducing in interfacial state, so by the electric field that is produced by negative electrical charge, fully formed the void coalescence layer on the interface of the light receiving surface side of photographic department.Therefore, suppressed from generation of interfaces electric charge (electronics).In addition, though from generation of interfaces electric charge (electronics), these electric charges (electronics) can not flow in photographic department the accumulation section as potential well yet, but flow into the void coalescence layer that has a large amount of holes.As a result, can eliminate electric charge (electronics).Therefore, because it can prevent from detecting on the interface dark current that is generated by electric charge in photographic department, so suppressed the dark current that causes by interfacial state.In addition, reduce layer owing to having formed interfacial state on the light receiving surface of light sensation parts, so further suppressed the generation of the electronics that causes due to interfacial state.As a result, suppressed to flow into photographic department due to the electronics that interfacial state produces as dark current.In addition, have the layer of negative electrical charge by use, just can form the HAD structure without Implantation and annealing.
According to another execution mode more of the present invention, comprise the following steps in the solid state image pickup device manufacture method (the second manufacture method) that forms the photographic department of the opto-electronic conversion of carrying out incident light on semiconductor substrate: on the light receiving surface at photographic department, formation permission incident light sees through insulating barrier wherein; Form the negative voltage applied layer on insulating barrier; And by the negative voltage applied layer is applied negative voltage, form the void coalescence layer on the light receiving surface of photographic department.
In this solid state image pickup device manufacture method (the second manufacture method), owing to having formed the negative voltage applied layer on the insulating barrier that forms on the light receiving surface of photographic department, so by the electric field that produces, fully formed the void coalescence layer on the interface on the light receiving surface limit of photographic department when negative voltage is put on the negative voltage applied layer.Therefore, suppressed from generation of interfaces electric charge (electronics).In addition, though from generation of interfaces electric charge (electronics), these electric charges (electronics) can not flow in photographic department the accumulation section as potential well yet, but flow into the void coalescence layer that has a large amount of holes.As a result, can eliminate electric charge (electronics).Therefore, due to its can prevent at the dark current that generates by electric charge on the interface detected in photographic department, so suppressed the dark current that causes by interfacial state.In addition, have the layer of negative electrical charge by use, just can form the HAD structure without Implantation and annealing.
According to another execution mode more of the present invention, comprise the following steps in the solid state image pickup device manufacture method (the 3rd manufacture method) that forms the photographic department of the opto-electronic conversion of carrying out incident light on semiconductor substrate: form insulating barrier on the light receiving surface at photographic department; And form the layer with work functional value larger than the interface of the light receiving surface side of the photographic department of carrying out opto-electronic conversion on insulating barrier.
In this solid state image pickup device manufacture method (the 3rd manufacture method), due to the layer with work functional value larger than the interface of the light receiving surface side of the photographic department of carrying out opto-electronic conversion being provided on the insulating barrier that forms on photographic department, so can form the void coalescence layer on the interface of the light-receiving side of photographic department.As a result, reduced dark current.
Another execution mode again according to the present invention, imaging device (the first imaging device) comprising: light-gathering optics section, assemble incident light; Solid state image pickup device is received in the incident light of assembling in light-gathering optics section, and carries out the opto-electronic conversion of received light; And signal processing part, the signal charge through opto-electronic conversion is processed.Solid state image pickup device comprises: the interfacial state that is formed on the light receiving surface of photographic department of solid state image pickup device of the opto-electronic conversion of carrying out incident light reduces layer; Be formed on the layer with negative electrical charge on interfacial state reduction layer; And be formed on void coalescence layer on the light receiving surface of photographic department.
In above-mentioned the first imaging device, because the first solid state image pickup device according to embodiment of the present invention is used, so can use the solid state image pickup device that has reduced dark current.
According to another execution mode more of the present invention, imaging device (the second imaging device) comprising: light-gathering optics section, assemble incident light; Solid state image pickup device is received in the incident light of assembling in light-gathering optics section, and carries out the opto-electronic conversion of received light; And Signal Processing Element, process the signal charge through opto-electronic conversion.Solid state image pickup device comprises: be formed on the insulating barrier on the light receiving surface of photographic department of solid state image pickup device of the opto-electronic conversion of carrying out incident light; And be formed on negative voltage applied layer on insulating barrier.Insulating barrier allows incident light by wherein being transmitted, and forms the void coalescence layer on the light receiving surface of photographic department.
In above-mentioned the second imaging device, due to the second solid state image pickup device that has used according to embodiment of the present invention, so can use the solid state image pickup device that has dwindled dark current.
According to another execution mode more of the present invention, imaging device (the 3rd imaging device) comprising: light-gathering optics section, assemble incident light; Solid state image pickup device is received in the incident light of assembling in light-gathering optics section, and carries out the opto-electronic conversion of received light; And signal processing part, the opto-electronic conversion of the signal charge of processing after opto-electronic conversion.Solid state image pickup device comprises: be formed on and convert incident light on the upper strata of light receiving surface of photographic department of solid state image pickup device of signal charge insulating barrier; And be formed on insulating barrier and have the layer of the work function value larger than the interface of the light receiving surface side of the photographic department of carrying out opto-electronic conversion.
In above-mentioned the 3rd imaging device, due to the 3rd solid state image pickup device that has used according to embodiment of the present invention, so can use the solid state image pickup device that has reduced dark current.
In the solid state image pickup device according to embodiment of the present invention, because dark current can be suppressed, so the noise in image can be reduced.As a result, has the advantage that can obtain high quality graphic.Especially, can reduce the generation of caused white point (point of the primary colors in the colored CCD situation) due to dark current when passing through the time exposure of very little exposure.
In the solid state image pickup device manufacture method according to embodiment of the present invention, because dark current can be suppressed, so the noise in image can be reduced.As a result, the advantage that has the solid state image pickup device that to realize to obtain high quality graphic.Especially, can realize to reduce the solid state image pickup device of the generation of caused white point (point of the primary colors in the colored CCD situation) due to dark current when passing through the time exposure of very little exposure.
In the imaging device according to embodiment of the present invention, because used the solid state image pickup device that can suppress dark current, the noise in image can be reduced.As a result, has the advantage that can record high quality graphic.Especially, can reduce the generation of caused white point (point of the primary colors in the colored CCD situation) due to dark current when passing through the time exposure of very little exposure.
Description of drawings
Fig. 1 is the sectional view that illustrates according to the structure of the major part of the solid state image pickup device (the first solid state image pickup device) of embodiment of the present invention (the first embodiment);
Fig. 2 is the energy band diagram that the effect of the solid state image pickup device (the first solid state image pickup device) according to embodiment of the present invention is shown;
Fig. 3 is the sectional view that the structure of the major part in the modified example of this solid state image pickup device (the first solid state image pickup device) is shown;
Fig. 4 is the sectional view that the structure of the major part in the modified example of this solid state image pickup device (the first solid state image pickup device) is shown;
Fig. 5 is the sectional view of structure that is used for the major part of explanation negative electrical charge near situation about being illustrated in when the layer with negative electrical charge is positioned at peripheral circuit portion;
Fig. 6 is the sectional view that illustrates according to the structure of the major part in the solid state image pickup device (the first solid state image pickup device) of embodiment of the present invention (the second embodiment);
Fig. 7 is the sectional view that illustrates according to the structure of the major part in the solid state image pickup device (the first solid state image pickup device) of embodiment of the present invention (the 3rd embodiment);
Fig. 8 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the first manufacture method) of embodiment of the present invention (the first embodiment);
Fig. 9 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the first manufacture method) of embodiment of the present invention (the first embodiment);
Figure 10 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the first manufacture method) of embodiment of the present invention (the first embodiment);
Figure 11 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the first manufacture method) of embodiment of the present invention (the second embodiment);
Figure 12 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the first manufacture method) of embodiment of the present invention (the second embodiment);
Figure 13 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the first manufacture method) of embodiment of the present invention (the second embodiment);
Figure 14 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the first manufacture method) of embodiment of the present invention (the 3rd embodiment);
Figure 15 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the first manufacture method) of embodiment of the present invention (the 3rd embodiment);
Figure 16 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the first manufacture method) of embodiment of the present invention (the 3rd embodiment);
Figure 17 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the first manufacture method) of embodiment of the present invention (the 4th embodiment);
Figure 18 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the first manufacture method) of embodiment of the present invention (the 4th embodiment);
Figure 19 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the first manufacture method) of embodiment of the present invention (the 4th embodiment);
Figure 20 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the first manufacture method) of embodiment of the present invention (the 5th embodiment);
Figure 21 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the first manufacture method) of embodiment of the present invention (the 5th embodiment);
Figure 22 is the diagram that the relation between flat band voltage (flat band voltage) and oxide layer conversion thickness is shown, and shows negative electrical charge and is present in hafnium oxide (HfO
2) layer in;
Figure 23 illustrates negative electrical charge to be present in hafnium oxide (HfO
2) be used for interface state density diagram relatively in layer;
Figure 24 is the diagram that the relation between flat band voltage and oxide layer conversion thickness is shown, and has illustrated based on the electronics of thermal oxide layer and the formation in hole;
Figure 25 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the first manufacture method) of embodiment of the present invention (the 6th embodiment);
Figure 26 is illustrated in the diagram of C-V (capacitance-voltage) characteristic of solid state image pickup device that the use of making in the 6th embodiment of the first manufacture method has the layer of negative electrical charge;
Figure 27 is illustrated in the diagram of C-V (capacitance-voltage) characteristic of solid state image pickup device that the use of making in the 6th embodiment of the first manufacture method has the layer of negative electrical charge;
Figure 28 is illustrated in the diagram of C-V (capacitance-voltage) characteristic of solid state image pickup device that the use of making in the 6th embodiment of the first manufacture method has the layer of negative electrical charge;
Figure 29 is the sectional view that illustrates according to the structure of the major part in the solid state image pickup device (the second solid state image pickup device) of embodiment of the present invention (the first embodiment);
Figure 30 is the sectional view that illustrates according to the structure of the major part in the solid state image pickup device (the second solid state image pickup device) of embodiment of the present invention (the second embodiment);
Figure 31 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the second manufacture method) of embodiment of the present invention (the first embodiment);
Figure 32 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the second manufacture method) of embodiment of the present invention (the first embodiment);
Figure 33 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the second manufacture method) of embodiment of the present invention (the first embodiment);
Figure 34 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the second manufacture method) of embodiment of the present invention (the second embodiment);
Figure 35 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the second manufacture method) of embodiment of the present invention (the second embodiment);
Figure 36 is the sectional view of the structure of the major part in the solid state image pickup device (the 3rd solid state image pickup device) that illustrates according to embodiment of the present invention (embodiment);
Figure 37 is the sectional view of structure of major part that the embodiment of the solid state image pickup device that uses the assist holes Guinier-Preston zone is shown;
Figure 38 is the flow chart that illustrates according to the solid state image pickup device manufacture method (the 3rd manufacture method) of embodiment of the present invention (embodiment);
Figure 39 illustrates the sectional view of processing according to the manufacturing in the solid state image pickup device manufacture method (the 3rd manufacture method) of embodiment of the present invention (embodiment);
Figure 40 illustrates the sectional view of processing according to the manufacturing of the major part in the solid state image pickup device manufacture method (the 3rd manufacture method) of embodiment of the present invention (embodiment);
Figure 41 is the block diagram that illustrates according to the imaging device of embodiment of the present invention; And
Figure 42 is the sectional view that the schematic construction of photographic department is shown, and shows the technology of the generation that suppresses the dark current that caused by interfacial state.
Embodiment
The below describes solid state image pickup device (the first solid state image pickup device) according to embodiment of the present invention (the first embodiment) with reference to the sectional view of Fig. 1 that the major part structure is shown.
As shown in Figure 1, solid state image pickup device 1 comprises the photographic department 12 of the opto-electronic conversion of carrying out incident light L at semiconductor substrate (or semiconductor layer) 11.On the sidepiece of photographic department 12, be formed with the peripheral circuit portion 14 of peripheral circuit (not specifically illustrating) with pixel marker space 13 intervenient mode being provided with.To use semiconductor substrate 11 to carry out following explanation.On the light receiving surface 12s of photographic department (comprising the void coalescence layer 23 that to be described in the back) 12, form interfacial state and reduce layer 21.Interfacial state reduces layer 21 by for example silicon dioxide (SiO
2) layer formation.Reduce on layer 21 in interfacial state, form the layer 22 with negative electrical charge.So, formed void coalescence layer (holeaccumulation layer) 23 in the light receiving surface side of photographic department 12.Therefore, at least on photographic department 12, to form interfacial state reduction layer 21 by the layer 22 with negative electrical charge at the film thickness that the light receiving surface 12s of photographic department 12 side forms void coalescence layer 23.For example, described film thickness is set to larger than the thickness that equals an atomic layer and less than or equal to 100nm.
In the situation that when solid state image pickup device 1 is cmos image sensor 1, for example, comprise such as transfering transistor (transfer transistor), reset transistor, amplifier transistor and select transistorized a plurality of transistorized image element circuit to be set to the peripheral circuit of peripheral circuit portion 14.In addition, comprise the drive circuit of carrying out the operation of read signal on the read line of the pixel array unit that is consisted of by a plurality of photographic departments 12, vertical scanning circuit, shift register or address decoder, the horizontal scanning circuit etc. of transmission read signal.
In addition, in the situation that when solid state image pickup device 1 is ccd image sensor, the vertical signal transfer portion that reads grid and transmit in vertical direction the read signal electric charge that for example, will read to by the signal charge of photographic department opto-electronic conversion the vertical transitions grid is set to the peripheral circuit of peripheral circuit portion 14.In addition, comprise vertical electric charge transfer portion etc.
Has the layer 22 of negative electrical charge by for example hafnium oxide (HfO
2) layer, aluminium oxide (Al
2O
3) layer, zirconia (ZrO
2) layer, tantalum oxide (Ta
2O
5) layer or titanium oxide (TiO
2) layer formation.The layer of these kinds has been used as the gate insulator of insulated gate FET etc.Therefore, because layer formation method is known, so can easily form described layer.The example of layer formation method comprises chemical vapour deposition technique, sputtering method and atomic layer deposition method.Herein, because can form simultaneously with 1nm thickness the SiO that reduces interfacial state during film forms
2Layer is so preferably use Atomic layer deposition method.In addition, about material apart from the above, also can consider lanthana (La2O
3), praseodymium oxide (Pr
2O
3), cerium oxide (CeO
2), neodymia (Nd
2O
3), promethium oxide (Pm
2O
3), samarium oxide (Sm
2O
3), europium oxide (Eu
2O
3), gadolinium oxide (Gd
2O
3), terbium oxide (Tb
2O
3), dysprosia (Dy
2O
3), holimium oxide (Ho
2O
3), erbium oxide (Er
2O
3), thulium oxide (Tm
2O
3), ytterbium oxide (Yb
2O
3), luteium oxide (Lu
2O
3), yittrium oxide (Y
2O
3) etc.In addition, the layer that has a negative electrical charge 22 also can be formed by nitrogenize hafnium layer, aln layer, nitrogen hafnium oxide layer or aluminum oxynitride layer.
Have formation insulating barrier 41 on the layer 22 of negative electrical charge, and forming light shield layer 42 on the insulating barrier on be positioned at peripheral circuit portion 14 41.Generate light by light shield layer 42 and do not incide zone on photographic department 12, and determine black level (black level) in image by the output of photographic department 12.In addition, owing to having prevented that light from being incided on peripheral circuit portion 14, so suppressed the characteristic changing that peripheral circuit portion caused due to light incident.In addition, formation permission incident light sees through insulating barrier 43 wherein.Preferably, insulating barrier 43 has an even surface.In addition, form color filter layer 44 and collector lens 45 on insulating barrier 43.
In solid state image pickup device (the first solid state image pickup device) 1, reduce in interfacial state and form the layer 22 with negative electrical charge on layer 21.Therefore, by having the negative electrical charge of layer in 22 of negative electrical charge, pass interfacial state and reduce layer 21 surface to photographic department 12 and apply electric field, make and form void coalescence layer 23 on the surface of photographic department 12.
In addition, as shown in Fig. 2 (1), by the negative electrical charge that occurs in layer at once after the layer 22 that has negative electrical charge in formation, near the void coalescence layer 23 that is used as at interface.Therefore, suppressed to reduce in photographic department 12 and interfacial state the dark current that produces due to interfacial state on interface between layer 21.That is, suppressed electric charge (electronics) from generation of interfaces.In addition, even from generation of interfaces electric charge (electronics), these electric charges (electronics) can not flow in photographic department 12 the accumulation section as potential well yet, but flow into the void coalescence layer 23 that has a large amount of holes, therefore, can eliminate these electric charges (electronics).As a result, owing to can prevent detecting the dark current that generates by electric charge in photographic department 12 on the interface, so can suppress the dark current that caused by interfacial state.
On the other hand, in do not provide the structure of void coalescence layer as shown in Fig. 2 (2), because interfacial state has generated dark current.As a result, dark current flows into the problem appearance of photographic department 12.In addition, in form the structure of void coalescence layer 23 by Implantation as shown in Fig. 2 (3), formed void coalescence layer 23.But, owing to must heat-treating under the high temperature more than 700 ℃ in order to activate the impurity that adulterates in Implantation as mentioned above, so impurity is along the void coalescence layer diffusion at interface.As a result, the zone that occurs due to opto-electronic conversion becomes very narrow, so be difficult to obtain desired light transfer characteristic.
In addition, in solid state image pickup device 1, reduce layer 21 owing to having formed interfacial state on the light receiving surface 12s of photographic department 12, so the electronics that has further suppressed to cause due to interfacial state generates.As a result, suppressed to flow into photographic department 12 due to the electronics of interfacial state generation as dark current.
In addition, in the situation that use hafnium oxide layer as the layer 22 with negative electrical charge, because the refractive index of hafnium oxide layer is about 2, so by the thickness optimization can being obtained anti-reflection effect and forming the HAD structure.Equally, in the situation that the material except the oxidation hafnium layer, by the thickness optimization can be obtained anti-reflection effect by the material with high index of refraction.
In addition, in the situation that the silica in being used in known solid state image pickup device and silicon nitride form with low temperature, known, the electric charge in layer becomes positive charge.In this case, be difficult to form the HAD structure by negative electrical charge.
Next, the modified example of solid state image pickup device (the first solid state image pickup device) 1 is described with reference to the sectional view of Fig. 3 of the structure that critical piece is shown.
As shown in Figure 3, when only the layer 22 by having negative electrical charge is in the situation that the anti-reflection effect in photographic department 12 not fully the time in solid state image pickup device 1, solid state image pickup device 2 has the anti-reflection layer 46 that forms on the layer 22 of negative electrical charge having.For example, form anti-reflection layer 46 by silicon nitride layer.In addition, be not formed on formed insulating barrier 43 in solid state image pickup device 1.Therefore, color filter layer 44 and collector lens 45 have been formed on anti-reflection layer 46.Therefore, anti-reflection effect can be maximized by the additional silicon nitride layer that forms.This structure also can be applied at the solid state image pickup device 3 of describing subsequently.
Therefore, due to the reflection that can reduce by formation anti-reflection layer 46 before light is incident on photographic department 12, so the light quantity that is incident on photographic department 12 can be increased.As a result, can improve the susceptibility of solid state image pickup device 2.
Next, the modified example of solid state image pickup device (the first solid state image pickup device) 1 is described with reference to the sectional view of Fig. 4 that major part is shown.
As shown in Figure 4, by directly form light shield layer 42 on having the layer 22 of negative electrical charge in not forming solid state image pickup device 1 insulating barrier 41 obtain solid state image pickup device 3.In addition, do not form insulating barrier 43, but form anti-reflection layer 46.
Therefore, owing to directly forming light shield layer 42 on the layer 22 of negative electrical charge having, so can make light shield layer 42 near the surface of semiconductor substrate 11.As a result, due to the distance between light shield layer 42 and semiconductor substrate 11 is diminished, so can reduce from the light component (that is, optics mixed color component) of the upper strata institute oblique incidence of contiguous photographic department (photodiode).
In addition, in the time of near the layer 22 that has as shown in Figure 5 negative electrical charge is in peripheral circuit portion 14, can be suppressed at the dark current that produces due to interfacial state on the surface of photographic department 12 by the formed void coalescence layer 23 of negative electrical charge by the layer 22 with negative electrical charge.But, in peripheral circuit portion 14, on one side of photographic department 12 and be present between the element 14D of Surface Edge and produced potential difference.Therefore, the charge carrier of not expecting flows into Surface Edge element 14D from the surface of photographic department 12, thereby causes the fault of peripheral circuit portion 14.The structure that is used for avoiding this fault will be described in the second and the 3rd embodiment subsequently.
Next, with reference to the sectional view of Fig. 6 that the major part structure is shown, solid state image pickup device (the first solid state image pickup device) according to embodiment of the present invention (the second embodiment) is described.In addition, in Fig. 6, light shield layer for a part of covering photographic department and peripheral circuit portion is not shown, be used at the spectral filtering of the light of photographic department incident color filter layer, be used for being focused at the collector lens etc. of the light of photographic department incident.
As shown in Figure 6, in solid state image pickup device 4, on the surface of peripheral circuit portion 14 and have between the layer 22 of negative electrical charge and form insulating barrier 24, make the distance on layer 22 with negative electrical charge and the surface of peripheral circuit portion 14 greater than the distance of the layer 22 that has negative electrical charge in solid state image pickup device 1 with the surface of photographic department 12.When being formed interfacial state by silicon oxide layer and reduce layer 21, reduce layer 21 by form the interfacial state thicker than photographic department 12 on peripheral circuit portion 14, can obtain insulating barrier 24.
Therefore, due in peripheral circuit portion 14 and have between the layer 22 of negative electrical charge and form insulating barrier 24, thereby make the distance on layer 22 with negative electrical charge and the surface of peripheral circuit portion 14 greater than the distance of the layer 22 with negative electrical charge with photographic department 12, so the electric field of the negative electrical charge in having the layer 22 of negative electrical charge does not affect the peripheral circuit of peripheral circuit portion 14.As a result, can prevent fault due to the caused peripheral circuit of negative electrical charge.
Next, with reference to the sectional view of Fig. 7 that the major part structure is shown, solid state image pickup device (the first solid state image pickup device) according to embodiment of the present invention (the 3rd embodiment) is described.In addition, in Fig. 7, light shield layer for a part of covering photographic department and peripheral circuit portion is not shown, be used at the spectral filtering of the light of photographic department incident color filter layer, be used for being focused at the collector lens etc. of the light of photographic department incident.
As shown in Figure 7, obtain solid state image pickup device 5 by the layer 25 that is formed for increasing the distance between the light receiving surface between layer and the peripheral circuit portion 14 in solid state image pickup device 1 with negative electrical charge and the layer 22 with negative electrical charge.In order to eliminate the impact of negative electrical charge, preferably have the layer 25 of positive charge, and for the preferred silicon nitride that uses of layer 25.
Therefore, due in peripheral circuit portion 14 and have between the layer of negative electrical charge and formed the layer 25 with positive charge, so can reduce layer 22 the negative electrical charge with negative electrical charge by the positive charge in layer 25.Therefore the electric field that has the negative electrical charge in the layer 22 of negative electrical charge can not affect peripheral circuit portion 14.As a result, can prevent the fault that peripheral circuit portion 14 causes due to negative electrical charge.As mentioned above, in peripheral circuit portion 14 and have the structure that forms the layer 25 with positive charge between the layer 22 of negative electrical charge and also can be used to solid state image pickup device 1,2,3 and 4, and can obtain the effect identical with solid state image pickup device 5.
Consist of each of solid state image pickup device 4 and 5, make the light shield layer with the part that is provided for covering photographic department 12 on the layer 22 of negative electrical charge and peripheral circuit portion 14, be used at least the light of photographic department 12 incidents carry out spectral filtering color filter layer, be used for being focused at the collector lens etc. of the light of photographic department 12 incidents.About the embodiment of this structure, can use solid state image pickup device 1, any one structure of 2 and 3.
Next, the sectional view of processing with reference to the manufacturing of Fig. 8～Figure 10 that major part is shown is described the solid state image pickup device manufacture method (the first manufacture method) according to embodiment of the present invention (the first embodiment).In Fig. 8～Figure 10, the manufacturing that solid state image pickup device 1 is shown as embodiment is processed.
As shown in Fig. 8 (1), form to carry out in semiconductor substrate (or semiconductor layer) 11 opto-electronic conversion of incident light photographic department 12, be used for separating the pixel marker space 13 of photographic department 12, the peripheral circuit portion 14 by insertion pixel marker space 13 formation peripheral circuits (not being specifically shown) between peripheral circuit portion 14 and photographic department 12 etc.Known manufacture method is used as manufacture method.
Subsequently, as shown in Fig. 8 (2), (in fact, on semiconductor substrate 11) forms interfacial state and reduces layer 21 on the light receiving surface 12s of photographic department 12.For example, by silica (SiO
2) layer formation interfacial state reduction layer 21.Subsequently, reduce in interfacial state the layer 22 that on layer 21, formation has negative electrical charge.Therefore, form void coalescence layer 23 on the light receiving surface limit of photographic department 12.Therefore, on photographic department 12, need to reduce layer 21 to form interfacial state by layer 22 thickness at the light receiving surface 12s of photographic department 12 side formation void coalescence layer 23 with negative electrical charge at least.For example, thickness is set to larger than and equals an atomic layer level thickness and less than 100nm.
Has the layer 22 of negative electrical charge by for example hafnium oxide (HfO
2) layer, aluminium oxide (Al
2O
3) layer, zirconia (ZrO
2) layer, tantalum oxide (Ta
2O
5) layer or titanium oxide (TiO
2) layer formation.The layer of these kinds has been used as the gate insulator of insulated gate FET etc.Therefore, because layer formation method is known, so can easily form described layer.For example, chemical vapour deposition technique, sputtering method and atomic layer deposition method can be used as a layer formation method.Form simultaneously SiO lower than interfacial state because can be during film forms with 1nm thickness herein,
2Layer is so preferably use Atomic layer deposition method.
In addition, about material apart from the above, can use lanthana (La
2O
3), praseodymium oxide (Pr
2O
3), cerium oxide (CeO
2), neodymia (Nd
2O
3), promethium oxide (Pm
2O
3), samarium oxide (Sm
2O
3), europium oxide (Eu
2O
3), gadolinium oxide (Gd
2O
3), terbium oxide (Tb
2O
3), dysprosia (Dy
2O
3), holimium oxide (Ho
2O
3), erbium oxide (Er
2O
3), thulium oxide (Tm
2O
3), ytterbium oxide (Yb
2O
3), luteium oxide (Lu
2O
3), yittrium oxide (Y
2O
3) etc.In addition, also can form the layer 22 with negative electrical charge by nitrogenize hafnium layer, aln layer, nitrogen hafnium oxide layer or aluminum oxynitride layer.For example, also can form these layers by chemical vapour deposition (CVD), sputtering method or ald.
In addition, the layer 22 that has negative electrical charge can add silicon (Si) or nitrogen (N) in the not damaged scope of insulating properties.In the not damaged scope of the insulating properties of layer, suitably determine concentration.Therefore, can improve the thermal resistance of layer or prevent the ability of the Implantation during the processing of adding silicon (Si) or nitrogen (N).
In addition, passing through hafnium oxide (HfO
2) layer forms in the situation of the layer 22 with negative electrical charge, due to hafnium oxide (HfO
2) refractive index of layer is about 2, so can effectively obtain anti-reflection effect by regulating thickness.In fact, for other kind the layer, by according to refractive index with the thickness optimization, also can obtain anti-reflection effect.
Subsequently, having formation insulating barrier 41 on the layer 22 of negative electrical charge, subsequently, form light shield layer 42 on insulating barrier 41.For example, form insulating barrier 41 by silicon oxide layer.In addition, for example, form light shield layer 42 by the metal level with shading performance.Therefore, for example, have formation light shield layer 42 on the layer 22 of negative electrical charge by utilizing the insulating barrier 41 that inserts betwixt, can prevent the metal of light shield layer 42 and 22 reaction of the layer with negative electrical charge that formed by hafnium oxide layer.In addition, because insulating barrier 42 when light shield layer is etched uses as etching stopping layer, so can prevent from destroying for the etching of the layer 22 with negative electrical charge.
Subsequently, as shown in Fig. 9 (3), by application against corrosion and lithographic printing in the part of photographic department 12 be positioned at the formation plate (not shown) of covering against corrosion on light shield layer 42 peripheral circuit portion 14 above, subsequently, by processing light shield layer 42 with the etching of covering plate against corrosion, thereby make light shield layer 42 stay the described part of photographic department 12 and be positioned on insulating barrier 41 above peripheral circuit portion 14.Generate light by light shield layer 42 and be not incident on zone on photographic department 12, and determine black level in image by the output of photographic department 12.In addition, owing to having prevented that light is incident upon on peripheral circuit portion 14, so suppressed the caused characteristic changing of light due to institute's incident on peripheral circuit portion.
Subsequently, as shown in Fig. 9 (4), be formed for reducing by the caused substandard insulating barrier 43 of light shield layer 42 on insulating barrier 41.The surface of insulating barrier 43 is preferably smooth, and for example consists of by covering insulating barrier.
Subsequently, as shown in Figure 10 (5), form color filter layer 44 on the insulating barrier 43 on be positioned at photographic department 12, subsequently, form collector lens 45 by known manufacturing technology on color filter layer 44.In this case, in order to prevent that the processing to color filter layer 44 destroys when lens are processed, can form printing opacity insulating barrier (not shown) between color filter layer 44 and collector lens 45.Therefore, form solid state image pickup device 1.
In the first embodiment of solid state image pickup device manufacture method (the first manufacture method), reduce in interfacial state and form the layer 22 with negative electrical charge on layer 21.Therefore, by by the electric field that generates at the negative electrical charge of layer in 22 with negative electrical charge, fully formed void coalescence layer 23 on the interface on the light receiving surface limit of photographic department 12.Therefore, suppressed the electric charge (electronics) that generates by the interface.In addition, even generated electric charge (electronics) by the interface, electric charge (electronics) can not flow in photographic department 12 the accumulation section as potential well yet, but flows into the void coalescence layer 23 that has a large amount of holes.As a result, can eliminate electric charge (electronics).Therefore, because it can prevent from detecting the dark current that generates by electric charge in photographic department on the interface, so suppressed by the caused dark current of interfacial state.In addition, reduce layer 21 owing to having formed interfacial state on the light receiving surface of photographic department 12, so further suppressed the generation due to the caused electronics of interfacial state.As a result, suppress the electronics that generates due to interfacial state and flowed into photographic department 12 as dark current.In addition, have the layer 22 of negative electrical charge by use, can just can not form the HAD structure by Implantation and annealing.
Next, the sectional view of processing with reference to the manufacturing of Figure 11～Figure 13 that major part is shown is described the solid state image pickup device manufacture method (the first manufacture method) according to embodiment of the present invention (the second embodiment).In Figure 11～Figure 13, the manufacturing that solid state image pickup device 2 is shown as embodiment is processed.
As shown in Figure 11 (1), at the photographic department 12 of opto-electronic conversion that form to carry out incident light on semiconductor substrate (or semiconductor layer) 11, be used for separating photographic department 12 pixel marker space 13, form the peripheral circuit portion 14 of peripheral circuit (not being specifically shown) etc. by insertion pixel marker space 13 between peripheral circuit portion 14 and photographic department 12.Known manufacture method is used as manufacture method.
Subsequently, as shown in Figure 11 (2), (in fact, on semiconductor substrate 11) forms interfacial state and reduces layer 21 on the light receiving surface 12s of photographic department 12.For example, by silica (SiO
2) layer formation interfacial state reduction layer 21.Subsequently, reduce in interfacial state the layer 22 that on layer 21, formation has negative electrical charge.Therefore, form void coalescence layer 23 on the light receiving surface limit of photographic department 12.Therefore, on photographic department 12, need to reduce layer 21 to form interfacial state by layer 22 thickness at the light receiving surface 12s of photographic department 12 side formation void coalescence layer 23 with negative electrical charge at least.For example, thickness is set to larger than and equals an atomic layer level thickness and less than 100nm.
For example, by hafnium oxide (HfO
2) layer, aluminium oxide (Al
2O
3) layer, zirconia (ZrO
2) layer, tantalum oxide (Ta
2O
5) layer or titanium oxide (TiO
2) layer forms the layer 22 with negative electrical charge.The layer of these kinds has been used as the gate insulator of insulated gate FET etc.Therefore, because layer formation method is known, so can easily form described layer.For example, chemical vapour deposition technique, sputtering method and atomic layer deposition method can be used as a layer formation method.
In addition, about material apart from the above, can use lanthana (La
2O
3), praseodymium oxide (Pr
2O
3), cerium oxide (CeO
2), neodymia (Nd
2O
3), promethium oxide (Pm
2O
3), samarium oxide (Sm
2O
3), europium oxide (Eu
2O
3), gadolinium oxide (Gd
2O
3), terbium oxide (Tb
2O
3), dysprosia (Dy
2O
3), holimium oxide (Ho
2O
3), erbium oxide (Er
2O
3), thulium oxide (Tm
2O
3), ytterbium oxide (Yb
2O
3), luteium oxide (Lu
2O
3), yittrium oxide (Y
2O
3) etc.In addition, also can form the layer 22 with negative electrical charge by nitrogenize hafnium layer, aln layer, nitrogen hafnium oxide layer or aluminum oxynitride layer.For example, also can form these layers by chemical vapour deposition (CVD), sputtering method or ald.Form simultaneously SiO lower than interfacial state because can be during film forms with 1nm thickness herein,
2Layer is so preferably use Atomic layer deposition method.
In addition, the layer 22 that has negative electrical charge can add silicon (Si) or nitrogen (N) in the not damaged scope of insulating properties.In the not damaged scope of the insulating properties of layer, suitably determine concentration.Therefore, can improve the thermal resistance of layer or prevent the ability of the Implantation during the processing of adding silicon (Si) or nitrogen (N).
In addition, passing through hafnium oxide (HfO
2) layer forms in the situation of the layer 22 with negative electrical charge, due to hafnium oxide (HfO
2) refractive index of layer is about 2, so can effectively obtain anti-reflection effect by regulating thickness.In fact, for other kind the layer, by according to refractive index with the thickness optimization, also can obtain anti-reflection effect.
Subsequently, having formation insulating barrier 41 on the layer 22 of negative electrical charge, subsequently, form light shield layer 42 on insulating barrier 41.For example, form insulating barrier 41 by silicon oxide layer.In addition, for example, form light shield layer 42 by the metal level with shading performance.Therefore, for example, the insulating barrier 41 that inserts betwixt by utilization has formation light shield layer 42 on the layer 22 of negative electrical charge, can prevent the metal of light shield layer 42 and be reacted by the formed layer 22 with negative electrical charge of hafnium oxide layer.In addition, because insulating barrier 42 when light shield layer is etched uses as etching stopping layer, so can prevent from destroying for the etching of the layer 22 with negative electrical charge.
Subsequently, as shown in Figure 12 (3), by application against corrosion and lithographic printing in the part of photographic department 12 be positioned at the formation plate (not shown) of covering against corrosion on light shield layer 42 peripheral circuit portion 14 above, subsequently, by processing light shield layer 42 with the etching of covering plate against corrosion, thereby make light shield layer 42 stay the described part of photographic department 12 and be positioned on insulating barrier 41 above peripheral circuit portion 14.Generate light by light shield layer 42 and be not incident on zone on photographic department 12, and determine black level in image by the output of photographic department 12.In addition, owing to having prevented that light is incident upon on peripheral circuit portion 14, so suppressed due to the caused characteristic changing of the light of incident on peripheral circuit portion.
Subsequently, as shown in Figure 12 (4), form anti-reflection layer 46 on insulating barrier 41, thereby cover light shield layer 42.For example, be about 2 silicon nitride layer and form anti-reflection layer 46 by having refractive index.
Subsequently, as shown in Figure 13 (5), form color filter layer 44 on the anti-reflection layer 46 on be positioned at photographic department 12, subsequently, form collector lens 45 by known manufacturing technology on color filter layer 44.In this case, in order to prevent that the processing to color filter layer 44 destroys when lens are processed, can form printing opacity insulating barrier (not shown) between color filter layer 44 and collector lens 45.Therefore, form solid state image pickup device 2.
In the second embodiment of solid state image pickup device manufacture method (the first manufacture method), can obtain the effect identical with the first embodiment, and can reduce reflection before light incides on photographic department 12 by forming anti-reflection layer 46.As a result, owing to can increasing the light quantity that is incident on photographic department 12, so can improve the susceptibility of solid state image pickup device 2.
Next, the sectional view of processing with reference to the manufacturing of Figure 14～Figure 16 that major part is shown is described the solid state image pickup device manufacture method (the first manufacture method) according to embodiment of the present invention (the 3rd embodiment).In Figure 14～Figure 16, the manufacturing that solid state image pickup device 3 is shown as embodiment is processed.
As shown in Figure 14 (1), at the photographic department 12 of opto-electronic conversion that form to carry out incident light on semiconductor substrate (or semiconductor layer) 11, be used for separating photographic department 12 pixel marker space 13, form the peripheral circuit portion 14 of peripheral circuit (not being specifically shown) etc. by insertion pixel marker space 13 between peripheral circuit portion 14 and photographic department 12.Known manufacture method is used as manufacture method.
Subsequently, as shown in Figure 14 (2), (in fact, on semiconductor substrate 11) forms interfacial state and reduces layer 21 on the light receiving surface 12s of photographic department 12.For example, by silica (SiO
2) layer formation interfacial state reduction layer 21.Subsequently, reduce in interfacial state the layer 22 that on layer 21, formation has negative electrical charge.Therefore, form void coalescence layer 23 on the light receiving surface limit of photographic department 12.Therefore, on photographic department 12, need to reduce layer 21 to form interfacial state by layer 22 thickness at the light receiving surface 12s of photographic department 12 side formation void coalescence layer 23 with negative electrical charge at least.For example, thickness is set to larger than and equals an atomic layer level thickness and less than or equal to 100nm.
For example, by hafnium oxide (HfO
2) layer, aluminium oxide (Al
2O
3) layer, zirconia (ZrO
2) layer, tantalum oxide (Ta
2O
5) layer or titanium oxide (TiO
2) layer forms the layer 22 with negative electrical charge.The layer of these kinds has been used as the gate insulator of insulated gate FET etc.Therefore, because layer formation method is known, so can easily form described layer.For example, chemical vapour deposition technique, sputtering method and atomic layer deposition method can be used as a layer formation method.Form simultaneously SiO lower than interfacial state because can be during film forms with 1nm thickness herein,
2Layer is so preferably use Atomic layer deposition method.
In addition, about material apart from the above, can use lanthana (La
2O
3), praseodymium oxide (Pr
2O
3), cerium oxide (CeO
2), neodymia (Nd
2O
3), promethium oxide (Pm
2O
3), samarium oxide (Sm
2O
3), europium oxide (Eu
2O
3), gadolinium oxide (Gd
2O
3), terbium oxide (Tb
2O
3), dysprosia (Dy
2O
3), holimium oxide (Ho
2O
3), erbium oxide (Er
2O
3), thulium oxide (Tm
2O
3), ytterbium oxide (Yb
2O
3), luteium oxide (Lu
2O
3), yittrium oxide (Y
2O
3) etc.In addition, also can form the layer 22 with negative electrical charge by nitrogenize hafnium layer, aln layer, nitrogen hafnium oxide layer or aluminum oxynitride layer.For example, also can form these layers by chemical vapour deposition (CVD), sputtering method or ald.
In addition, the layer 22 that has negative electrical charge can add silicon (Si) or nitrogen (N) in the not damaged scope of insulating properties.In the not damaged scope of the insulating properties of layer, suitably determine concentration.Therefore, can improve the thermal resistance of layer or prevent the ability of the Implantation during the processing of adding silicon (Si) or nitrogen (N).
In addition, passing through hafnium oxide (HfO
2) layer forms in the situation of the layer 22 with negative electrical charge, can be by regulating hafnium oxide (HfO
2) layer thickness effectively obtain anti-reflection effect.In fact, for other kind the layer, by according to refractive index with the thickness optimization, also can obtain anti-reflection effect.
Subsequently, has formation light shield layer 42 on the layer 22 of negative electrical charge.For example, form light shield layer 42 by the metal level with shading performance.Therefore, owing to directly forming light shield layer 42 on the layer 22 of negative electrical charge having, so can make light shield layer 42 close to the surface of semiconductor substrate 11.As a result, due to the distance that can narrow between light shield layer 42 and semiconductor substrate 11, so can reduce from the light component (that is, optics mixed color component) of the upper strata institute oblique incidence of adjacent photodiode.
Subsequently, as shown in Figure 15 (3), by application against corrosion and lithographic printing in the part of photographic department 12 be positioned at the formation plate (not shown) of covering against corrosion on light shield layer 42 peripheral circuit portion 14 above, subsequently, by processing light shield layer 42 with the etching of covering plate against corrosion, thereby make light shield layer 42 stay the described part of photographic department 12 and be positioned on the layer 22 with negative electrical charge above peripheral circuit portion 14.Generate light by light shield layer 42 and be not incident on zone on photographic department 12, and determine black level in image by the output of photographic department 12.In addition, owing to having prevented that light is incident upon on peripheral circuit portion 14, so suppressed due to the caused characteristic changing of the light of incident on peripheral circuit portion.
Subsequently, as shown in Figure 15 (4), have formation anti-reflection layer 46 on the layer 22 of negative electrical charge, thereby covering light shield layer 42.For example, be about 2 silicon nitride layer and form anti-reflection layer 46 by having refractive index.
Subsequently, as shown in Figure 16 (5), form color filter layer 44 on the anti-reflection layer 46 on be positioned at photographic department 12, subsequently, form collector lens 45 by known manufacturing technology on color filter layer 44.In this case, in order to prevent that the processing to color filter layer 44 destroys when lens are processed, can form printing opacity insulating barrier (not shown) between color filter layer 44 and collector lens 45.Therefore, form solid state image pickup device 3.
In the 3rd embodiment of solid state image pickup device manufacture method (the first manufacture method), can obtain the effect identical with the first embodiment, and by having the direct light shield layer 42 that forms on the layer 22 of negative electrical charge, can make light shield layer 42 close to the surface of semiconductor substrate 11.As a result, due to the distance that can narrow between light shield layer 42 and semiconductor substrate 11, so can reduce light component (that is, light mixed color component) from the upper strata oblique incidence of adjacent photodiode.In addition,, anti-reflection effect can be maximized by forming anti-reflection layer 46 not fully the time when layer 22 anti-reflection effect by having negative electrical charge only.
Next, the sectional view of processing with reference to the manufacturing of Figure 17～Figure 19 that major part is shown is described the solid state image pickup device manufacture method (the first manufacture method) according to embodiment of the present invention (the 4th embodiment).In Figure 17～Figure 19, the manufacturing that solid state image pickup device 4 is shown as embodiment is processed.
As shown in Figure 17 (1), at the photographic department 12 of opto-electronic conversion that form to carry out incident light on semiconductor substrate (or semiconductor layer) 11, be used for separating photographic department 12 pixel marker space 13, form the peripheral circuit portion 14 of peripheral circuit (for example, circuit 14C) etc. by insertion pixel marker space 13 between peripheral circuit portion 14 and photographic department 12.Known manufacture method is used as manufacture method.Subsequently, form the permission incident light and passed through the wherein insulating barrier 26 of transmission.For example, form insulating barrier 26 by silicon oxide layer.
Subsequently, as shown in Figure 17 (2), form the plate 51 of covering against corrosion on the insulating barrier 26 on be positioned at peripheral circuit portion 14 by application against corrosion and lithographic printing.
Subsequently, as shown in Figure 18 (3), against corrosionly cover plate 51 (with reference to (2) of Figure 17) etching and process insulating barrier 26 by using, stay insulating barrier 26 on peripheral circuit portion 14.Subsequently, remove the plate 51 of covering against corrosion.
Subsequently, as shown in Figure 18 (4), (in fact, on semiconductor substrate 11) forms the interfacial state that has covered dielectric film 26 and reduces layer 21 on the light receiving surface 12s of photographic department 12.For example, by silica (SiO
2) layer formation interfacial state reduction layer 21.
Subsequently, as shown in Figure 19 (5), reduce in interfacial state and form the layer 22 with negative electrical charge on layer 21.Therefore, form void coalescence layer 23 on the light receiving surface limit of photographic department 12.Therefore, on photographic department 12, need to reduce layer 21 to form interfacial state by layer 22 thickness at the light receiving surface 12s of photographic department 12 side formation void coalescence layer 23 with negative electrical charge at least.For example, thickness is set to larger than and equals an atomic layer level thickness and less than or equal to 100nm.
For example, by hafnium oxide (HfO
2) layer, aluminium oxide (Al
2O
3) layer, zirconia (ZrO
2) layer, tantalum oxide (Ta
2O
5) layer or titanium oxide (TiO
2) layer forms the layer 22 with negative electrical charge.The layer of these kinds has been used as the gate insulator of insulated gate FET etc.Therefore, because layer formation method is known, so can easily form described layer.For example, chemical vapour deposition technique, sputtering method and atomic layer deposition method can be used as a layer formation method.Form simultaneously SiO lower than interfacial state because can be during film forms with 1nm thickness herein,
2Layer is so preferably use Atomic layer deposition method.
In addition, about material apart from the above, can use lanthana (La
2O
3), praseodymium oxide (Pr2O
3), cerium oxide (CeO
2), neodymia (Nd
2O
3), promethium oxide (Pm
2O
3), samarium oxide (Sm
2O
3), europium oxide (Eu
2O
3), gadolinium oxide (Gd
2O
3), terbium oxide (Tb
2O
3), dysprosia (Dy
2O
3), holimium oxide (Ho
2O
3), erbium oxide (Er
2O
3), thulium oxide (Tm
2O
3), ytterbium oxide (Yb
2O
3), luteium oxide (Lu
2O
3), yittrium oxide (Y
2O
3) etc.In addition, also can form the layer 22 with negative electrical charge by nitrogenize hafnium layer, aln layer, nitrogen hafnium oxide layer or aluminum oxynitride layer.For example, also can form these layers by chemical vapour deposition (CVD), sputtering method or ald.
In addition, the layer 22 that has negative electrical charge can add silicon (Si) or nitrogen (N) in the not damaged scope of insulating properties.In the not damaged scope of the insulating properties of layer, suitably determine concentration.Therefore, can improve the thermal resistance of layer or prevent the ability of the Implantation during the processing of adding silicon (Si) or nitrogen (N).
In addition, passing through hafnium oxide (HfO
2) layer forms in the situation of the layer 22 with negative electrical charge, due to hafnium oxide (HfO
2) layer refractive index be about 2, so can effectively obtain anti-reflection effect by regulating thickness.In fact, for other kind the layer, by according to refractive index with the thickness optimization, also can obtain anti-reflection effect.
Consist of solid state image pickup device 4, make the light shield layer with the part that is provided for covering photographic department 12 on the layer 22 of negative electrical charge and peripheral circuit portion 14, be used at least carrying out being incident on light on photographic department 12 spectral filtering color filter layer, be used for assembling the collector lens that is incident on the light on photographic department 12 etc.With regard to the embodiment of this structure, also can use solid state image pickup device 1, any one structure of 2 and 3.
In the 4th embodiment of solid state image pickup device manufacture method (the first manufacture method), reduce in interfacial state and form the layer 22 with negative electrical charge on layer 21.Therefore, by the electric field that is produced by the negative electrical charge of layer in 22 with negative electrical charge, fully form void coalescence layer 23 on the interface on the light receiving surface limit of photographic department 12.Therefore, can suppress the electric charge (electronics) that generates by the interface.In addition, even generated electric charge (electronics) by the interface, electric charge (electronics) can not flow in photographic department 12 the accumulation section as potential well yet, but flows into the void coalescence layer 23 that has a large amount of holes.As a result, can eliminate electric charge (electronics).Therefore, because it can prevent from detecting the dark current that generates by electric charge in photographic department on the interface, so suppressed the dark current that causes by interfacial state.In addition, reduce layer 21 owing to having formed interfacial state on the light receiving surface of photographic department 12, so further suppressed the generation of the electronics that causes due to interfacial state.As a result, suppressed to flow into photographic department 12 due to the electronics of interfacial state generation as dark current.In addition, have the layer 22 of negative electrical charge by use, just can not form the HAD structure by Implantation and annealing.
In addition, owing to having formed insulating barrier 26 on peripheral circuit portion 14, so on peripheral circuit portion 14 with the distance of the layer 22 with negative electrical charge become greater than on photographic department 12 with the distance of the layer with negative electrical charge.As a result, reduced the negative electric field that is applied to peripheral circuit portion 14 from the layer 22 with negative electrical charge.That is, due to the impact of the layer that has reduced to have on peripheral circuit portion 14 negative electrical charge, so prevented fault by the peripheral circuit portion 14 that is caused by the layer 22 caused negative electricity place with negative electrical charge.
Next, the sectional view of processing with reference to the manufacturing of Figure 20 that major part is shown and Figure 21 is described the solid state image pickup device manufacture method (the first manufacture method) according to embodiment of the present invention (the 5th embodiment).In Figure 20 and Figure 21, the manufacturing that solid state image pickup device 4 is shown as embodiment is processed.
As shown in Figure 20 (1), at the photographic department 12 of opto-electronic conversion that form to carry out incident light on semiconductor substrate (or semiconductor layer) 11, be used for separating photographic department 12 pixel marker space 13, form the peripheral circuit portion 14 of peripheral circuit (for example, circuit 14C) etc. by insertion pixel marker space 13 between peripheral circuit portion 14 and photographic department 12.Known manufacture method is used as manufacture method.Subsequently, form the interfacial state that allows incident light to be passed through wherein transmission and reduce layer 21.Subsequently, interfacial state reduce that the surface of the layer that is formed on layer 21 having a negative electrical charge and light receiving surface separates layers 25.In order to eliminate the impact of negative electrical charge, preferably have the layer 25 of positive charge, and for the preferred silicon nitride that uses of layer 25.
At least on photographic department 12, need to be will form at the thickness of the void coalescence layer 23 that is described subsequently interfacial state and reduce layer 21 by forming in the light receiving surface 12s of photographic department 12 side at the layer 22 with negative electrical charge that is formed subsequently.For example, thickness need to be set to larger than and equal an atomic layer and less than or equal to 100nm.
Subsequently, as shown in Figure 20 (2), form the plate 52 of covering against corrosion by using on application against corrosion and the lithographic printing layer 25 with positive charge on be positioned at peripheral circuit portion 14.
Subsequently, as shown in Figure 21 (3), by use against corrosion cover plate 52 (with reference to (2) of Figure 20) etching process have positive charge the layer 25, stay on peripheral circuit portion 14 have positive charge the layer 25.Subsequently, remove the plate (resist mask) 52 of covering against corrosion.
Subsequently, as shown in Figure 21 (4), reduce in interfacial state and form the layer 22 with negative electrical charge that has covered the layer 25 with positive charge on layer 21.
For example, by hafnium oxide (HfO
2) layer, aluminium oxide (Al
2O
3) layer, zirconia (ZrO
2) layer, tantalum oxide (Ta
2O
5) layer or titanium oxide (TiO
2) layer forms the layer 22 with negative electrical charge.The layer of these kinds has been used as the gate insulator of insulated gate FET etc.Therefore, because layer formation method is known, so can easily form described layer.For example, chemical vapour deposition technique, sputtering method and atomic layer deposition method can be used as a layer formation method.Form simultaneously SiO lower than interfacial state because can be during film forms with 1nm thickness herein,
2Layer is so preferably use Atomic layer deposition method.
In addition, about material apart from the above, can use lanthana (La
2O
3), praseodymium oxide (Pr
2O
3), cerium oxide (CeO
2), neodymia (Nd
2O
3), promethium oxide (Pm
2O
3), samarium oxide (Sm
2O
3), europium oxide (Eu
2O
3), gadolinium oxide (Gd
2O
3), terbium oxide (Tb
2O
3), dysprosia (Dy
2O
3), holimium oxide (Ho
2O
3), erbium oxide (Er
2O
3), thulium oxide (Tm
2O
3), ytterbium oxide (Yb
2O
3), luteium oxide (Lu
2O
3), yittrium oxide (Y
2O
3) etc.In addition, also can form the layer 22 with negative electrical charge by nitrogenize hafnium layer, aln layer, nitrogen hafnium oxide layer or aluminum oxynitride layer.For example, also can form these layers by chemical vapour deposition (CVD), sputtering method or ald.
In addition, the layer 22 that has negative electrical charge can add silicon (Si) or nitrogen (N) in the not damaged scope of insulating properties.In the not damaged scope of the insulating properties of layer, suitably determine concentration.Therefore, can improve the thermal resistance of layer or prevent the ability of the Implantation during the processing of adding silicon (Si) or nitrogen (N).
In addition, passing through hafnium oxide (HfO
2) layer forms in the situation of the layer 22 with negative electrical charge, can be by regulating hafnium oxide (HfO
2) layer thickness effectively obtain anti-reflection effect.In fact, for other kind the layer, by according to refractive index with the thickness optimization, also can obtain anti-reflection effect.
Solid state image pickup device 5 be configured to the layer with negative electrical charge be provided on 22 covering the part of photographic department 12 and peripheral circuit portion 14 light shield layer, be used at least carrying out being incident on light on photographic department 12 spectral filtering color filter layer, be used for assembling the collector lens that is incident on the light on photographic department 12 etc.About the embodiment of this structure, also can use solid state image pickup device 1, any one structure of 2 and 3.
In the 5th embodiment of solid state image pickup device manufacture method (the first manufacture method), reduce in interfacial state and form the layer 22 with negative electrical charge on layer 21.Therefore, by the electric field that is generated by the negative electrical charge of layer in 22 with negative electrical charge, fully form void coalescence layer 23 on the interface on the light receiving surface limit of photographic department 12.Therefore, can suppress the electric charge (electronics) that generates by the interface.In addition, even generated electric charge (electronics) by the interface, electric charge (electronics) can not flow in photographic department 12 the accumulation section as potential well yet, but flows into the void coalescence layer 23 that has a large amount of holes.As a result, can eliminate electric charge (electronics).Therefore, because it can prevent from detecting the dark current that generates by electric charge in photographic department on the interface, so suppressed the dark current that causes by interfacial state.In addition, reduce layer 21 owing to having formed interfacial state on the light receiving surface of photographic department 12, so further suppressed the generation of the electronics that causes due to interfacial state.As a result, suppressed to flow into photographic department 12 due to the electronics of interfacial state generation as dark current.In addition, have the layer 22 of negative electrical charge by use, just can not form the HAD structure by Implantation and annealing.
In addition, preferably have positive charge and be used for separating layer with negative electrical charge and the layer 25 on the surface of light receiving surface owing to having formed between 22 at peripheral circuit portion 14 and layer with negative electrical charge, so reduced to have layers 22 negative electrical charge of negative electrical charge by the positive charge in having the layer 25 of positive charge.Therefore, the electric field of the negative electrical charge in having the layer 22 of negative electrical charge can not affect peripheral circuit portion 14.As a result, can prevent that peripheral circuit portion 14 is due to the caused fault of negative electrical charge.
Be present in the hafnium oxide (HfO of an embodiment as the layer with negative electrical charge with being described below negative electrical charge herein,
2) layer.
About the first sample, prepared the thermal oxidation silicon (SiO that has by inserting betwixt
2) the mos capacitance device of the gate electrode that forms on silicon substrate of layer, wherein, the thickness of thermal oxidation silicon layer is changed.
About the second sample, prepared the CVD silica (CVD-SiO that has by inserting betwixt
2) the mos capacitance device of the gate electrode that forms on silicon substrate of layer, wherein, the thickness of CVD silicon oxide layer is changed.
About the 3rd sample, prepared have by be inserted into therebetween pass through continuous laminating ozone oxidation silicon (O
3-SiO
2) layer, hafnium oxide (HfO
2) layer and CVD silica (SiO
2) the mos capacitance device of the gate electrode that forms on silicon substrate of the laminate layers that obtains of layer, wherein, the thickness of CVD silicon oxide layer is changed.In addition, HfO
2Layer and O
3-SiO
2The thickness of layer is fixed.
By using silane (SiH
4) and oxygen (O
2) the CVD method of mist form the CVD-SiO of each sample
2Layer, and by using tetraethyl methylamino hafnium (TEMAHf) and ozone (O3) to form HfO as the ALD method of material
2Layer.The O of the 3rd sample
3-SiO
2Layer forms HfO for having the 1nm of being about thickness and working as with the ALD method
2When layer is at HfO
2The basal plane oxide layer that is formed between layer and silicon substrate.For each gate electrode in each sample, use from the structure of top beginning lamination aluminium (Al) layer, titanium nitride (TiN) layer and titanium (Ti) layer.
In superincumbent sample structure, in the situation that the first and second samples, at once at SiO
2Form gate electrode on layer, but using HfO
2In the situation of the 3rd sample of layer, only at HfO
2Lamination CVD-SiO on layer
2Layer.So just prevented from working as HfO
2HfO when layer directly is in contact with one another with gate electrode
2React each other on the interface with electrode.
In addition, in the laminar structure of the 3rd sample, HfO
2The thickness of layer is fixed to 10nm, and top CVD-SiO
2The thickness of layer is changed.Reason is because HfO
2Have very large relative dielectric constant, therefore, even form HfO with the thickness of 10nm
2Layer, when the thickness as oxide layer comes calculated thickness, HfO
2The thickness that layer also has several nanometers.As a result, be difficult to see flat band voltage Vfb about the change of oxide layer conversion thickness.
For first, second and third sample, the flat band voltage Vfb according to oxide layer conversion thickness T ox detected.Figure 22 illustrates described result.
As shown in figure 22, at thermal oxidation (heat-SiO
2) layer the first sample and CVD-SiO
2In the situation of the second sample of layer, flat band voltage moves to negative direction according to the increase of thickness.On the other hand, only using HfO
2In the 3rd sample of layer, confirmed that flat band voltage moves to positive direction according to the increase of thickness.By the behavior of flat band voltage, can find out that negative electrical charge is present in HfO
2In layer.In addition, can find out except HfO
2Outside formation have negative electrical charge the layer every kind of material also be similar to HfO
2Has negative electrical charge.
In addition, the data of the interface state density in each sample shown in Figure 23.In Figure 23, carried out the comparison of interface state density Dit by first, second and third sample that uses Tox in Figure 22 to be substantially equal to 40nm.
As a result, as shown in figure 23, as thermal oxidation (heat-SiO
2) layer the first sample have 2E10 (/cm
2EV) during following characteristic, CVD-SiO
2In the second sample of layer, interfacial state has been reduced approximately order of magnitude.On the other hand, using HfO
2In the situation of the 3rd sample of layer, confirmed to be about 3E10/cm
2EV and close to the good interface of thermal oxide layer.In addition, can find out except HfO
2Outside be used to form have negative electrical charge the layer every kind of material also be similar to HfO
2Has the good interface close to thermal oxide layer.
Next, flat band voltage Vfb about oxide layer conversion thickness T ox detected when forming the layer 25 with positive charge.Described result shown in Figure 24.
As shown in figure 24, in the situation that greater than the flat band voltage of thermal oxide layer, because negative electrical charge is present in layer, so form the hole on the surface of silicon (Si).The embodiment of this laminate layers comprise by on the surface of silicon (Si) substrate from lower beginning continuous laminating HfO
2Layer and CVD-SiO
2The structure that layer obtains.On the other hand, in the situation that less than the flat band voltage of thermal oxide layer, because positive charge is present in layer, so form electronics on silicon (Si) surface.The embodiment of this laminate layers comprise by on the surface of silicon (Si) substrate from lower beginning continuous laminating CVD-SiO
2Layer, CVD-SiN layer, HfO
2Layer and CVD-SiO
2The structure that layer obtains., when the thickness of CVD-SiN layer becomes large, compare with thermal oxide layer, it is large that flat band voltage becomes, and moves up at losing side herein.In addition, eliminated hafnium oxide (HfO by the positron in the CVD-SiN layer
2) the impact of negative electrical charge.
In the above in the solid state image pickup device in embodiment 1～5, in the situation that comprise nitrogen (N) in having as mentioned above the layer of negative electrical charge, the nitriding of layer 22 rear use high frequency plasmas or microwave plasma by having negative electrical charge in formation is processed and can be comprised nitrogen (N).In addition, have after 22 on the layer 22 of negative electrical charge by using electron beam irradiation to carry out electronic beam curing by the layer that has negative electrical charge in formation and processing negative electrical charge in increasing layer.
Next, with below with reference to Figure 25 describe when the hafnium oxide that is used in the solid state image pickup device manufacture method in the first to the 5th embodiment of the present invention be used for having negative electrical charge layers 22 the time preferable production process (the 6th embodiment).About this embodiment, Figure 25 illustrates the situation of the first embodiment that is applicable to the first manufacture method.The formation method that has in embodiments of the present invention the layer of negative electrical charge also can be applied in the formation method of the layer that has negative electrical charge in the second to the 5th embodiment of the first manufacture method in an identical manner.
When use atomic layer deposition method (ALD method) by hafnium oxide forms have negative electrical charge layers 22 the time, film quality is very good.But, have the problem that film forms needs the time.Therefore, as shown in Figure 25 (1), prepared semiconductor substrate (or semiconductor layer) 11, wherein, form to carry out the opto-electronic conversion of incident light photographic department 12, be used for separating photographic department 12 pixel marker space 13, have the peripheral circuit portion 14 by the pixel marker space 13 formed peripheral circuits (not specifically illustrating) of insertion between peripheral circuit portion 14 and photographic department 12, and (in fact, on semiconductor substrate 11) forms interfacial state and reduces layer 21 on the light receiving surface 12s of photographic department 12.Subsequently, use Atomic layer deposition method to reduce in interfacial state and form the first hafnium oxide layer 22-1 on layer 21.Form the first hafnium oxide layer 22-1 with the thickness for the required thickness of 3nm at least of the layer 22 with negative electrical charge.
In the embodiment of the film formation condition of the atomic layer deposition method that is used to form the first hafnium oxide layer 22-1 (ALD method), TEMA-Hf (tetraethyl methylamino hafnium), TDMA-Hf (four dimethylamino hafniums) or TDEA-Hf (four diethylamino hafniums) are used as precursor, substrate temperature when film forms is set to 200 ℃～500 ℃, and precursor flow rate is set to 10cm
3/ min～500cm
3/ min, the radiated time position of precursor 1 second～15 seconds, and ozone (O
3) flow be set to 5cm
3/ min～50cm
3/ min.
Replacedly, also can form the first hafnium oxide layer 22-1 by using metal organic chemical vapor deposition (mocvd method).In the situation that during TEMA-Hf (tetraethyl methylamino hafnium), TDMA-Hf (four dimethylamino hafniums) or TDEA-Hf (four diethylamino hafniums) be used as the embodiment of film formation condition of precursor, substrate temperature when film forms is set to 200 ℃～600 ℃, and precursor flow rate is set to 10cm
3/ min～500cm
3/ min, the radiated time position of precursor 1 second～15 seconds, and ozone (O
3) flow be set to 5cm
3/ min～50cm
3/ min.
Subsequently, as shown in Figure 25 (2), form the second hafnium oxide layer 22-2 by using physical vaporous deposition (PVD method) on the first hafnium oxide layer 22-1, form the layer 22 with negative electrical charge.For example, carry out film and form, make the thickness that comprises the first hafnium oxide layer 22-1 and the second hafnium oxide layer 22-2 be set to 50nm～60nm.Subsequently, as described at the first to the 5th embodiment, carry out the subsequent treatment that is used for having formation insulating barrier 41 on the layer 22 of negative electrical charge.
In the embodiment of the film formation condition in the physical vaporous deposition that is used to form the second hafnium oxide layer 22-2 (PVD) method, the hafnium metallic target is used as target, argon gas and oxygen are used as processing gas, film forms atmospheric pressure and is set to 0.01Pa～50Pa, power is set to 500W～2.00kW, and the flow of argon gas (Ar) is set to 5cm3/min～50cm
3/ min, and oxygen (O
2) flow be set to 5cm
3/ min～50cm
3/ min.
Next, the thickness that is set to 60nm and the first hafnium oxide layer 22-1 at layer 22 the thickness with negative electrical charge that is made of hafnium oxide is used as under the condition of parameter, has detected C-V (capacitance-voltage) characteristic of solid state image pickup device.Figure 26 and Figure 27 illustrate described result.In Figure 26 and Figure 27, vertical axis represents electric capacity (C), and trunnion axis represents voltage (V).
As shown in figure 26, only forming hafnium oxide (HfO by the PDV method
2) in the situation in when layer, flat band voltage Vfb be as negative voltage-1.32V.For the layer with negative electrical charge, this is inadequate.In order to form the layer with negative electrical charge, flat band voltage Vfb need to be positive voltage.In addition, because rising edge is mild, so interface state density is increased.In this case, interface state density Dit is too high can not be employed to such an extent as to estimate, and these will be described subsequently.
On the other hand, in the situation that when by using the ALD method to form the first hafnium oxide layer 22-1 with 3nm thickness and subsequently when using the PVD method to form the second hafnium oxide layer 22-2 with 50nm thickness on the first hafnium oxide layer 22-1, flat band voltage Vfb be as positive voltage+0.42V.Therefore, obtain to have the layer of positive charge.In addition, because rising edge is sharp-pointed, so interface state density Dit is very low, cause Dit=5.14E10/cm
2EV.
In addition, when by use the ALD method with the thickness of 11nm form the first hafnium oxide layer 22-1 and subsequently by using the PVD method in the situation that when forming the second hafnium oxide layer 22-2 with the thickness of 50nm on the first hafnium oxide layer 22-1, flat band voltage Vfb becomes the positive voltage that is further increased.Therefore, obtained to have the layer of negative electrical charge.In addition, because rising edge is more sharp-pointed, so interface state density Dit is very low.
In addition, as shown in figure 27, when by use the ALD method with the thickness of 11nm form the first hafnium oxide layer 22-1 and subsequently by using the PVD method in the situation that when forming the second hafnium oxide layer 22-2 with the thickness of 50nm on the first hafnium oxide layer 22-1, flat band voltage Vfb is close to when forming the whole situation of layer 22 time with negative electrical charge by the ALD method, and rising edge also has almost identical state.
Next, quasi static C V) and the measurement (Hf-CV) of use high frequency for by forming the first hafnium oxide layer 22-1 with the thickness of 11nm and use subsequently PVD method thickness with 50nm on the first hafnium oxide layer 22-1 to form the layer with negative electrical charge that the second hafnium oxide layer 22-2 is obtained, typically carry out the measurement of using galvanic C-V characteristic (Qs-CV:.Qs-CV is measured as the method for measurement of the mobile displacement current between grid and substrate as the linear function raster pole tension of time and calculating.By like this, obtained the capacitance in the high frequency region.Figure 28 illustrates described result.In addition, come calculation interface density of states Dit by the difference between Qs-CV measured value and Hf-CV measured value.As a result, because interface state density Dit becomes 5.14E10/cm
2EV is so acquire fully low value.In addition, as mentioned above, because flat band voltage Vfb is+0.42V, so acquire positive voltage.
Therefore, by form the first hafnium oxide layer 22-1 with the thickness more than 3nm, the value that can have layer 22 the flat band voltage Vfb of negative electrical charge is set to positive voltage, and can make interface state density Dit very low.Therefore, preferably form the first hafnium oxide layer 22-1 with the thickness of layer 22 required thickness of 3nm at least with negative electrical charge.
The first hafnium oxide layer 22-1 is for passing through the formed layer of atomic layer deposition method.If use atomic layer deposition method form the process of hafnium oxide layer in thickness less than 3nm, when when using the PVD method to form subsequently the second hafnium oxide layer 22-2, the interfacial failure generation that causes due to the PVD method.But, if the thickness of the first hafnium oxide layer 22-1 is more than 3nm, even by using PVD method formation the second hafnium oxide layer 22-2 subsequently, also can suppress interfacial failure.Therefore, the thickness by first hafnium oxide layer 22-1～22-3 makes the interfacial failure that is caused by the PVD method suppressed more than being set to 3nm, comprises that the value of flat band voltage Vfb of the layer of the first hafnium oxide layer 22-1 and the second hafnium oxide layer 22-2 becomes positive voltage.As a result, the layer that comprises the first hafnium oxide layer 22-1 and the second hafnium oxide layer 22-2 becomes the layer with negative electrical charge.For this reason, make and reduce layer 21 by interfacial state formed the first hafnium oxide layer 22-1 of one side has thickness more than 3nm at the interface.In addition, the embodiment of PVD method comprises sputtering method.
On the other hand, if having the whole layer 22 of negative electrical charge by using atomic layer deposition method to form, acquire good C-V characteristic, but because need the too many time to form described layer, so production efficiency significantly reduces.Due to this reason, can not make the thickness of the first hafnium oxide layer 22-1 too large.In atomic layer deposition method, for example, approximately need to form in 45 minutes the thick hafnium oxide layer of 10nm.On the other hand, in the situation that physical vaporous deposition for example, need to form the hafnium oxide layer that thickness is 50nm in about 3 minutes.Therefore, consider that production efficiency determines the upper limit of the first hafnium oxide layer 22-1 thickness.For example, when the layer formation time of the layer 22 with negative electrical charge was set to below 1 hour, the upper thickness limit of the first hafnium oxide layer 22-1 was about 11nm～12nm.Therefore, use in the situation of the layer method of formationing of atomic layer deposition method and physical vaporous deposition together, compare with the situation of whole layer 22 that has negative electrical charge by using atomic layer deposition method or CVD method to form, can significantly shorten a layer formation time.As a result, improved large-scale production efficient.In addition, in the situation that atomic layer deposition method or mocvd method, and by coming cambial situation to compare with physical vaporous deposition, almost substrate is produced and destroy.Therefore, due to the destruction of having reduced optical receiving sensor section, so can solve the large problem of interfacial state intensity change that produces reason as dark current.
Up to now, the situation that is formed the layer 22 with negative electrical charge by hafnium oxide layer has been described.But, with regard to the layer 22 with negative electrical charge, for example, also can use aluminium oxide (Al
2O
3) layer, zirconia (ZrO
2) layer, tantalum oxide (Ta
2O
5) layer or titanium oxide (TiO
2), lanthana (La
2O
3), praseodymium oxide (Pr
2O
3), cerium oxide (CeO
2), neodymia (Nd
2O
3), promethium oxide (Pm
2O
3), samarium oxide (Sm
2O
3), europium oxide (Eu
2O
3), gadolinium oxide (Gd
2O
3), terbium oxide (Tb
2O
3), dysprosia (Dy
2O
3), holimium oxide (Ho
2O
3), erbium oxide (Er
2O
3), thulium oxide (Tm
2O
3), ytterbium oxide (Yb
2O
3), luteium oxide (Lu
2O
3), yittrium oxide (Y
2O
3), nitrogenize hafnium layer, aln layer, nitrogen hafnium oxide layer or aluminum oxynitride layer.And, in this case, also can use in an identical manner the manufacture method according to embodiment of the present invention, wherein, at first by using the atomic layer deposition method execution level to form, subsequently by using physical vaporous deposition execution level deposition.Therefore, can obtain the effect identical with the hafnium oxide layer situation.
Next, with reference to the sectional view of Figure 29 that the major part structure is shown, solid state image pickup device (the second solid state image pickup device) according to embodiment of the present invention (the first embodiment) is described.In addition, in Figure 29, light shield layer for a part of covering photographic department and peripheral circuit portion is not shown, be used at the spectral filtering of the light of photographic department incident color filter layer, be used for being focused at the collector lens etc. of the light of photographic department incident.
As shown in figure 29, solid state image pickup device 6 is included in the photographic department 12 of carrying out the opto-electronic conversion of incident light in semiconductor substrate (or semiconductor layer) 11.In a side part of photographic department 12, provide the peripheral circuit portion 14 by the pixel marker space formation peripheral circuit (for example, circuit 14C) that inserts betwixt.On the light receiving surface 12s of photographic department (comprising the void coalescence layer 23 that to be described subsequently) 12, form insulating barrier 27.For example, by silica (SiO
2) form insulating barrier 27.Form negative voltage applied layer 28 on insulating barrier 27.
In the drawings, on peripheral circuit portion 14 than photographic department 12 on more heavy back form insulating barrier 27, make the distance on negative voltage applied layer 28 and peripheral circuit portion 14 surfaces greater than the distance of negative voltage applied layer 28 with photographic department 12 surfaces.In addition, when forming insulating barrier 27 by silicon oxide layer, for example, insulating barrier 27 have with the photographic department 12 that before had been described on interfacial state reduce the identical operation of layer 21.Therefore, for example, preferably form insulating barrier 27 on photographic department 12 with more than one atomic layer and at the thickness below 100nm.Therefore, when negative voltage is put on negative voltage applied layer 28, at the light receiving surface limit formation void coalescence layer 23 of photographic department 12.
In the situation that when solid state image pickup device 6 is cmos image sensor, for example, consist of and comprise such as transfering transistor, reset transistor, amplifier transistor and select transistorized a plurality of transistorized image element circuit to be provided as the peripheral circuit of peripheral circuit portion 14.In addition, be included in by the drive circuit of carrying out the read signal operation on the read line of the formed pel array parts of a plurality of photographic departments 12, vertical scanning circuit, shift register or address decoder, the horizontal scanning circuit etc. of transmission read signal.
In addition, in the situation that when solid state image pickup device 6 is ccd image sensor, the vertical electric charge transfering part that reads grid and transmit in vertical direction the read signal electric charge that for example, will read in by the signal charge of photographic department opto-electronic conversion the vertical transitions grid is provided as the peripheral circuit of peripheral circuit portion 14.In addition, comprise horizontal electric charge transfer portion etc.
Consist of negative voltage applied layer 28 by allowing incident light to see through the transparency conducting layer that wherein is transmitted, for example, transparency conducting layer allows visible light through wherein being transmitted.For example, can use indium tin oxide layer, indium zinc oxide layer, indium oxide layer, stannic oxide layer or gallium oxide tin layer to be used as such layer.
Consist of solid state image pickup device 6, make light shield layer in a part that is provided for covering photographic department 12 on negative voltage applied layer 28 and peripheral circuit portion 14, be used at least at the spectral filtering of the incident light on photographic department 12 color filter layer, be used for being focused at the collector lens of the light of incident on photographic department 12 etc.About the embodiment of this structure, also can use solid state image pickup device 1, any one structure of 2 and 3.
In solid state image pickup device (the second solid state image pickup device) 6, form negative voltage applied layer 28 on the insulating barrier 27 that forms on the light receiving surface 12s of photographic department 12.Therefore, the electric field that generates by the negative voltage that negative voltage applied layer 28 is applied fully forms the void coalescence layer on the interface on one side of the light receiving surface 12s of photographic department 12.Therefore, suppressed the electric charge (electronics) that generates by the interface.In addition, even generated electric charge (electronics) by the interface, electric charge (electronics) can not flow in photographic department 12 the accumulation section as potential well yet, but flows into the void coalescence layer 23 that has a large amount of holes.As a result, can eliminate electric charge (electronics).As a result, because it can prevent from becoming dark current and being detected by photographic department 12 due to the electric charge that the interface generates, so suppressed the dark current that causes by interfacial state.In addition, reduce owing to having formed as interfacial state the insulating barrier 27 that layer uses on the light receiving surface 12s of photographic department 12, so further suppressed the generation of the electronics that causes due to interfacial state.As a result, suppressed to flow into photographic department 12 due to the electronics of interfacial state generation as dark current.
In addition, as shown in the figure, owing to forming negative voltage applied layer 28, making by insulating barrier 27 makes the distance on negative voltage applied layer 28 and the surface of peripheral circuit portion 14 greater than the distance of negative voltage applied layer 28 with the surface of photographic department 12, so reduced the electric field of generation when negative voltage is put on negative voltage applied layer 28 to the impact of peripheral circuit portion 14.As a result, can eliminate fault in peripheral circuit portion 14.
Next, with reference to the sectional view of Figure 30 that the major part structure is shown, solid state image pickup device (the second solid state image pickup device) according to embodiment of the present invention (the second embodiment) is described.In addition, in Figure 30, light shield layer for a part of covering photographic department and peripheral circuit portion is not shown, be used at the spectral filtering of the light of photographic department incident color filter layer, be used for being focused at the collector lens etc. of the light of photographic department incident.
As shown in figure 30, by being used for making the negative voltage applied layer form layer 25 acquisition solid state image pickup device 7 away from the light receiving surface (in fact, between the insulating barrier in solid state image pickup device 6 27 and negative voltage applied layer 28) of peripheral circuit portion 14.In order to eliminate the impact of negative voltage, preferably has the layer 25 of positive charge.Preferably form the layer 25 with positive charge between peripheral circuit portion 14 and negative voltage applied layer 28.Replacedly, can be on insulating barrier 27 or insulating barrier form the layer 25 with positive charge for 27 times.In addition, although formed insulating barrier 27 as the layer with uniform thickness in the drawings, be similar to solid state image pickup device 6, can be on peripheral circuit portion 14 than on photographic department 12 heavy back formation insulating barrier 27 more.
Example with layer 25 of positive charge comprises silicon nitride layer.
Therefore, owing to having formed the layer 25 with positive charge between peripheral circuit portion 14 and negative voltage applied layer 28, so the negative electric field by having reduced at the positive charge of layer in 25 with positive charge to generate when negative voltage is put on negative voltage applied layer 28.Therefore, negative electric field does not affect peripheral circuit portion 14.As a result, because it has prevented fault due to the caused peripheral circuit portion 14 of negative electric field, so improved the reliability of peripheral circuit portion 14.As mentioned above, also can be with the structure applications that forms the layer 25 with positive charge between peripheral circuit portion 14 and negative voltage applied layer 28 in solid state image pickup device 6, and can obtain with solid state image pickup device 7 in identical effect.
Next, the sectional view of processing with reference to the manufacturing of Figure 31～Figure 33 that the major part structure is shown is described the manufacture method (the second manufacture method) according to the solid state image pickup device of embodiment of the present invention (the first embodiment).In Figure 31～Figure 33, the manufacturing that solid state image pickup device 4 is shown as embodiment is processed.
As shown in Figure 31 (1), at the photographic department 12 of opto-electronic conversion that form to carry out incident light on semiconductor substrate (or semiconductor layer) 11, be used for separating photographic department 12 pixel marker space 13, form the peripheral circuit portion 14 of peripheral circuit (for example, circuit 14C) etc. by insertion pixel marker space 13 between peripheral circuit portion 14 and photographic department 12.Known manufacture method is used as manufacture method.Subsequently, form the permission incident light and passed through the wherein insulating barrier 29 of transmission.For example, form insulating barrier 29 by silicon oxide layer.
Subsequently, as shown in Figure 31 (2), form the plate 53 of covering against corrosion on application against corrosion and the lithographic printing insulating barrier 29 on be positioned at peripheral circuit portion 14 by using.
Subsequently, as shown in Figure 32 (3), against corrosionly cover plate 53 (with reference to (2) of Figure 31) etching and process insulating barrier 29 by using, stay insulating barrier 29 on peripheral circuit portion 14.Subsequently, remove the plate 53 of covering against corrosion.
Subsequently, as shown in Figure 32 (4), (in fact, on semiconductor substrate 11) forms the interfacial state that has covered dielectric film 29 and reduces layer 21 on the light receiving surface 12s of photographic department 12.For example, by silica (SiO
2) layer formation interfacial state reduction layer 21.Therefore, reduce layer 21 by insulating barrier 29 and interfacial state and formed insulating barrier 27.
Subsequently, as shown in Figure 33 (5), reduce in interfacial state and form negative voltage applied layer 28 on layer 21.Negative voltage by being applied in negative voltage applied layer 28 forms void coalescence layer 23 on the light receiving surface limit of photographic department 12.Therefore, at least on photographic department 12, need to form interfacial state with the thickness that the negative voltage by being applied in negative voltage applied layer 28 forms void coalescence layer 23 in the light receiving surface 12s of photographic department 12 side and reduce layer 21.For example, thickness is set to larger than and equals an atomic layer level thickness and less than or equal to 100nm.
Form negative voltage applied layer 28 by allowing incident light to see through the transparency conducting layer that wherein is transmitted, for example, transparency conducting layer allows visible light through wherein being transmitted.For example, can use indium tin oxide layer, indium zinc oxide layer, indium oxide layer, stannic oxide layer or gallium oxide tin layer to be used as such layer.
Be formed on negative voltage applied layer 28 in solid state image pickup device 6 covering the part of photographic department 12 and peripheral circuit portion 14 light shield layer, be used at least the color filter layer that carries out spectral filtering at the incident light on photographic department 12, be used for the incident light on photographic department 12 is carried out the collector lens etc. of optically focused.Any method described in each embodiment of solid state image pickup device manufacture method (the first manufacture method) can be used as the embodiment of manufacture method.
In the first embodiment of the manufacture method (the second manufacture method) of solid state image pickup device 6, form negative voltage applied layer 28 on formed insulating barrier 27 on the light receiving surface 12s of photographic department 12.Therefore, the electric field that generates by the negative voltage that negative voltage applied layer 28 is applied fully forms the void coalescence layer on the interface on one side of the light receiving surface 12s of photographic department 12.Therefore, can suppress the electric charge (electronics) that generates by the interface.In addition, even generated electric charge (electronics) by the interface, electric charge (electronics) can not flow in photographic department 12 the accumulation section as potential well yet, but flows into the void coalescence layer 23 that has a large amount of holes.As a result, can eliminate electric charge (electronics).As a result, because it can prevent from becoming dark current and being detected by photographic department 12 due to the electric charge that the interface generates, so suppressed the dark current that causes by interfacial state.In addition, reduce layer 21 owing to having formed interfacial state on the light receiving surface 12s of photographic department 12, so further suppressed the generation of the electronics that causes due to interfacial state.As a result, suppressed to flow into photographic department 12 due to the electronics of interfacial state generation as dark current.
In addition, as shown in the figure, than the insulating barrier 27 on photographic department 12 more heavy back formed insulating barrier 27 on peripheral circuit portion 14, make by insulating barrier 27 to make the distance on negative voltage applied layer 28 and the surface of peripheral circuit portion 14 greater than the distance of negative voltage applied layer 28 with the surface of photographic department 12.Therefore, reduced the electric field that generates to the impact of peripheral circuit portion 14 when negative voltage is put on negative voltage applied layer 28.That is, owing to having reduced electric field strength and having suppressed the lip-deep gathering of hole in peripheral circuit portion 14, so can eliminate the fault in peripheral circuit portion 14.
Next, the sectional view of processing with reference to the manufacturing of Figure 34 that the major part structure is shown and Figure 35 is described the solid state image pickup device manufacture method (the second manufacture method) according to embodiment of the present invention (the second embodiment).In Figure 34 and Figure 35, the manufacturing that solid state image pickup device 4 is shown as embodiment is processed.
As shown in Figure 34 (1), at the photographic department 12 of opto-electronic conversion that form to carry out incident light on semiconductor substrate (or semiconductor layer) 11, be used for separating photographic department 12 pixel marker space 13, form the peripheral circuit portion 14 of peripheral circuit (for example, circuit 14C) etc. by insertion pixel marker space 13 between peripheral circuit portion 14 and photographic department 12.Known manufacture method is used as manufacture method.Subsequently, form the permission incident light and passed through the wherein insulating barrier 27 of transmission.For example, form insulating barrier 27 by silicon oxide layer.Subsequently, form the layer 25 with positive charge on insulating barrier 27.For example, form the layer 25 with positive charge by silicon nitride layer.
Subsequently, as shown in Figure 34 (2), form the plate 54 of covering against corrosion by using on application against corrosion and the lithographic printing layer 25 with positive charge on be positioned at peripheral circuit portion 14.
Subsequently, as shown in Figure 35 (3), by use against corrosion cover plate 54 (with reference to (2) of Figure 34) etching process have positive charge the layer 25, stay on peripheral circuit portion 14 have positive charge the layer 25.Subsequently, remove the plate 54 of covering against corrosion.
Subsequently, as shown in Figure 35 (4), at insulating barrier 27 with have on the layer 25 of positive charge and form negative voltage applied layer 28.Negative voltage by being applied in negative voltage applied layer 28 forms void coalescence layer 23 on the light receiving surface limit of photographic department 12.In this case, can make insulating barrier 27 have the function that interfacial state reduces layer.Therefore, at least on photographic department 12, need to be to form insulating barrier 27 by the negative voltage that is applied in negative voltage applied layer 28 at the thickness that the light receiving surface 12s of photographic department 12 side forms void coalescence layer 23.For example, thickness is set to larger than and equals an atomic layer level thickness and less than or equal to 100nm.
Form negative voltage applied layer 28 by allowing incident light to see through the transparency conducting layer that wherein is transmitted, for example, transparency conducting layer allows visible light through wherein being transmitted.For example, can use indium tin oxide layer, indium zinc oxide layer, indium oxide layer, stannic oxide layer or gallium oxide tin layer to be used as such layer.
Although be not illustrated, be formed on the negative voltage applied layer 28 in solid state image pickup device 7 covering the part of photographic department 12 and peripheral circuit portion 14 light shield layer, be used at least the color filter layer that carries out spectral filtering at the incident light on photographic department 12, be used for the incident light on photographic department 12 is carried out the collector lens etc. of optically focused.Any method described in each embodiment of solid state image pickup device manufacture method (the first manufacture method) can be used as the embodiment of manufacture method.
In the second embodiment of the manufacture method (the second manufacture method) of solid state image pickup device 7, form negative voltage applied layer 28 on the insulating barrier 27 that forms on the light receiving surface 12s of photographic department 12.Therefore, the electric field that generates by the negative voltage that negative voltage applied layer 28 is applied fully forms the void coalescence layer on the interface on one side of the light receiving surface 12s of photographic department 12.Therefore, can suppress the electric charge (electronics) that generates by the interface.In addition, even generated electric charge (electronics) by the interface, electric charge (electronics) can not flow in photographic department 12 the accumulation section as potential well yet, but flows into the void coalescence layer 23 that has a large amount of holes.As a result, can eliminate electric charge (electronics).As a result, because it can prevent from becoming dark current and being detected by photographic department 12 due to the electric charge that the interface generates, so suppressed the dark current that causes by interfacial state.In addition, reduce layer 21 owing to having formed interfacial state on the light receiving surface 12s of photographic department 12, so further suppressed the generation of the electronics that causes due to interfacial state.As a result, suppressed to flow into photographic department 12 due to the electronics of interfacial state generation as dark current.
In addition, owing to having formed the layer 25 with positive charge between peripheral circuit portion 14 and negative voltage applied layer 28, so the negative electric field by having reduced at the positive charge of layer in 25 with positive charge to generate when negative voltage is put on negative voltage applied layer 28.Therefore, negative electric field does not affect peripheral circuit portion 14.As a result, can prevent the fault that peripheral circuit portion 14 causes due to the negative electricity place.As mentioned above, the structure that forms the layer 25 with positive charge between peripheral circuit portion 14 and negative voltage applied layer 28 also can be applied to solid state image pickup device 6, and can obtain with solid state image pickup device 7 in identical effect.
Next, with reference to the sectional view of Figure 36 that the major part structure is shown, solid state image pickup device (the 3rd solid state image pickup device) according to embodiment of the present invention (embodiment) is described.In addition, in Figure 36, mainly show photographic department, but peripheral circuit portion, wiring layer are not shown, be used for covering the part of photographic department and peripheral circuit portion light shield layer, be used at the spectral filtering of the light of photographic department incident color filter layer, be used for being focused at the collector lens etc. of the light of photographic department incident.
As shown in figure 36, solid state image pickup device 8 has the photographic department 12 of carrying out the opto-electronic conversion of incident light on semiconductor substrate (or semiconductor layer) 11.For example, at the light receiving surface 12s of photographic department 12 limit formation insulating barrier 31, and by silica (SiO
2) layer forms insulating barrier 31.On insulating barrier 31, the layer (hereinafter, being known as the assist holes Guinier-Preston zone) 32 that the interface of the side of the light receiving surface 12s of the photographic department 12 of formation ratio execution opto-electronic conversion has larger work function.By the difference between work function, form void coalescence layer 23.Because assist holes Guinier-Preston zone 32 does not need to be electrically connected to other element and wiring, so assist holes Guinier-Preston zone 32 can be for insulating barrier 21 or such as the conductive layer of metal level.
In addition, on one side of the semiconductor substrate 11 opposite with the light emitting edge that forms photographic department 12, for example, form to be configured and be included in the wiring 51 that all is provided in a plurality of layers and the wiring layer 53 of insulating barrier 52.In addition, support wiring layer 53 by supporting substrate 54.
For example, owing to forming void coalescence layer 23 by silicon (Si), so work function value is about 5.1eV.Therefore, preferred assist holes Guinier-Preston zone 32 is for having the layer greater than 5.1 work function value.
For example, in the situation that use metal level, according to the natural sciences chronology, the work function value of iridium (110) layer is 5.42, and the work function value of iridium (111) layer is 5.76, the work function value of nickel dam is 5.15, the work function value of palladium layer is 5.55, and the work function value of osmium layer is 5.93, and the work function value of gold (100) layer is 5.47, the work function value of gold (110) layer is 5.37, and the work function value of platinum layer is 5.64.These layers can be used as assist holes Guinier-Preston zone 32.Except top layer, the metal level with work function value larger than the interface of the side of the light receiving surface 12s of photographic department 12 also can be used as assist holes Guinier-Preston zone 32.In addition, although be used as the ITO (In of transparency electrode
2O
3) work function value be 4.8eV, but can control the work function of oxide semiconductor by the injection of layer formation method or impurity.
Owing to forming assist holes Guinier-Preston zone 32 at the light emitting edge, so very important to allow incident light to form assist holes Guinier-Preston zone 32 through the thickness that wherein is transmitted.About the transmissivity of incident light, preferred assist holes Guinier-Preston zone 32 has high as far as possible transmissivity.For example, guarantee that preferably transmissivity is more than 95%.
In addition, for assist holes Guinier-Preston zone 32, preferably use the difference between the work function on surface of the work function of assist holes Guinier-Preston zone 32 and photographic department 12.Owing to not existing low-resistance restriction, so even for example in the situation that when using conductive layer, also do not need to make thickness very large.For example, suppose that incident intensity is I
0, and absorptivity is α (wherein, α=(4 π k)/λ, k is the Boltzmann constant, and λ is the incident light wavelength), the luminous intensity in the position of depth z position is represented as I (z)=I
0Exp (α z).Therefore, I (z)/I is satisfied in calculating
0=0.8 thickness, for example, the thickness of iridium layer is 1.9nm, the thickness of gold layer is 4.8nm, and the thickness of platinum layer is 3.4nm.That is, can find out, even thickness changes along with the type of film, also preferred thickness is below 2nm.
In addition, assist holes Guinier-Preston zone 32 can be organic layer.For example, can use polyethylene dioxythiophene (polyethylenedioxythiophene).As mentioned above, assist holes Guinier-Preston zone 32 can be conductive layer, insulating barrier or semiconductor layer, as long as it has the higher work function value in interface than the side of the light receiving surface 12s of photographic department 12.
In solid state image pickup device 8, provide layer (the assist holes Guinier-Preston zone) 32 with work function value larger than the interface 23 of the side of the light receiving surface 12s of photographic department 12 on formed insulating barrier 31 on photographic department 12.Therefore, due to the void coalescence efficient of having improved void coalescence layer 23, so formed void coalescence layer 23 can be assembled sufficient hole therein on the light receiving surface of photographic department 12.As a result, reduced dark current.
Next, the structure embodiment of the solid state image pickup device that uses assist holes Guinier-Preston zone 32 is described with reference to Figure 37.Figure 37 illustrates cmos image sensor.
As shown in figure 37, form a plurality of pixel components 61 that incident light is converted to the photographic department (for example, photodiode) 12 of the signal of telecommunication and has the transistor group 55 (partly being illustrated in the drawings) that comprises transfering transistor, amplifier transistor and reset transistor in semiconductor substrate 11.For example, silicon substrate is used as semiconductor substrate 11.In addition, form to process the Signal Processing Element (not shown) of the signal charge that reads from each photographic department 12.
For example, the periphery forming element marker space 13 of the pixel component 61 between a plurality of pixel components 61 that provide on column direction or line direction.
In addition, at the upper formation of Surface Edge (below the semiconductor substrate 11 in the figure) wiring layer 53 by the formed semiconductor substrate 11 of photographic department 12.Wiring layer 53 is configured the insulating barrier 52 that comprises distribution 51 and covered distribution 51.Form supporting substrate 54 on wiring layer 53.For example, form supporting substrate 54 by silicon substrate.
In addition, in solid state image pickup device 1, at the low Surface Edge formation void coalescence layer 23 of semiconductor substrate 11, and form assist holes Guinier-Preston zone 32 by the insulating barrier 31 that inserts therein on void coalescence layer 23.In addition, be formed with machine color filter layer 44 by the insulating barrier (not shown).Be formed with machine color filter layer 44 corresponding to photographic department 12, and for example, by arrange in the grate figure blue organic colour filter, red organic colour filter, and green organic colour filter obtain organic color filter layer 44.In addition, be formed for making incident light to be focused at collector lens 45 on each photographic department 12 on each organic color filter layer 44.
Next, the sectional view that the sectional view of processing with reference to the manufacturing of the flow chart shown in Figure 38 of describing major part, Figure 39 and the manufacturing of Figure 40 are processed is described the solid state image pickup device manufacture method (the 3rd manufacture method) according to embodiment of the present invention (the first embodiment).In Figure 38～Figure 40, the manufacturing that solid state image pickup device 8 is shown as embodiment is processed.
As shown in Figure 38 (1) and Figure 39 (1), at first by the insulating barrier that inserts therein (for example prepare, silicon oxide layer) 83 form the SOI substrate 81 that silicon layer 84 obtains on silicon substrate 82, and the basal surface mark 85 that is formed for aiming in silicon layer 84.
Subsequently, as shown in Figure 38 (2) and Figure 39 (2), forming element marker space (not being illustrated), void coalescence layer 23, photographic department 12, transistor group 55, wiring layer 53 etc. in the silicon layer 84 of SOI substrate 81.Can form void coalescence layer 23 in processing subsequently after with the processing of substrate attenuation.
Subsequently, as shown in Figure 38 (3) and Figure 39 (3), wiring layer 53 and supporting substrate 54 are bonded to together.
Subsequently, as shown in Figure 38 (4) and Figure 39 (4), carry out the processing that makes 81 attenuation of SOI substrate.For example, remove silicon substrate 82 by grinding and polishing herein.
Although be not illustrated, also can be by at the insulating barrier 82 rear formation protective layer (not shown) of eliminating SOI substrate 81 and carry out Impurity injection and activate to process and form void coalescence layer 23.About this embodiment, form plasma TEOS silicon oxide layer with the thickness of 30nm and be used as protective layer, and carry out Impurity injection by the injection of boron.In this ion implanting conditions, for example, Implantation Energy is set to 20keV, and for example, it is 1 * 10 that dosage is set
13/ cm
2In addition, preferably by carrying out activation in the annealing of the temperature below 400 ℃, make wiring layer 53 and the bonding of supporting substrate 54 not be destroyed.Subsequently, for example, process by rare fluoric acid and remove protective layer.At this moment, can remove the insulating barrier 83 of SOI substrate 81.
Therefore, as shown in Figure 40 (1), form the interface 23 on the light receiving surface limit of photographic department on photographic department 12.
Subsequently, as shown in Figure 40 (2), at the upper insulating barrier 31 that forms of void coalescence layer 23 (light emitting edge).About this embodiment, form plasma TEOS silicon oxide layer with the thickness of 30nm.
Subsequently, as shown in Figure 40 (3), at the upper layer (that is, the assist holes Guinier-Preston zone 32) that has than at the larger work function value in interface (having the work function value that is about 5.1eV) on the light receiving surface 12s limit of photographic department 12 that forms of insulating barrier 31 (light emitting edge).With regard to embodiment, form platinum (Pt) layer that has the work function of 5.6eV as thin metal layer with 3nm thickness by sputter.For other thin metal layer, can use iridium (Ir), rhenium (Re), nickel (Ni), palladium (Pd), cobalt (Co), ruthenium (Ru), rhodium (Rh), osmium (Os), gold (Au) etc.Much less, also can use alloy.
In addition, in this embodiment, because the work function at the interface on the light receiving surface limit of photographic department is about 5.1eV, so ITO (In
2O
3) also can be used as the material of assist holes Guinier-Preston zone 32.Form in processing at layer, ITO can have the work function of 4.5eV～5.6eV.In addition, because have work function value greater than 5.1eV, so also can use other such as RuO
2, SnO
2, IrO
2, OsO
2, ZnO, ReO
2And MoO
2Oxide semiconductor or by injecting semiconductor that acceptor impurity obtains or as the polyethylene dioxythiophene (PEDOT) of the organic material material as assist holes Guinier-Preston zone 32.In addition, the embodiment that forms technology at 400 ℃ of performed layers of following temperature comprises ALD method, CVD method and gas phase doping method.
Subsequently, as shown in Figure 38 (5) and Figure 39 (5), form hearth electrodes 92 by barrier metal 91.
Subsequently, as shown in Figure 38 (6) and Figure 39 (6), form color filter layer 44 on photographic department 12, subsequently, form collector lens 45.Therefore, formed solid state image pickup device 8.
In this solid state image pickup device manufacture method (the 3rd manufacture method), provide the layer that has than at the interface 23 larger work function values of the side of the light receiving surface 12s of photographic department 12 on formed insulating barrier 31 on photographic department 12.Therefore, due to the void coalescence efficient of having improved void coalescence layer 23, so formed void coalescence layer 23 can be assembled sufficient hole therein on the interface of the side of the light receiving surface 12s of photographic department 12.As a result, reduced dark current.In addition, assist holes Guinier-Preston zone 32 preferably has the work function value higher than the work function value of void coalescence layer 23, and because electric current does not need to flow into assist holes Guinier-Preston zone 32, so can be conductive layer, insulating barrier 21 or semiconductor layer.For this reason, for assist holes Guinier-Preston zone 32, also can select to have high-resistance material.In addition, assist holes Guinier-Preston zone 32 does not need the external signal input terminal.
Each of solid state image pickup device in execution mode 1～8 comprises that each has and converts incident light to a plurality of pixel components of photographic department of the signal of telecommunication and the wiring layer that provides on the surface by the formed semiconductor substrate of pixel component in the above, and can be used as having a kind of rear surface irradiation type imaging device of structure, wherein, receive in each photographic department from the light of one side incident of the surface opposite that forms wiring layer.Much less, each of solid state image pickup device 1～8 also can be used as the top emission type solid state image pickup device, wherein, at light receiving surface limit formation wiring layer, and the light path of the incident light by incident on photographic department is set to not form the zone of wiring layer, can not be blocked in the incident light of incident on photographic department.
Next, with reference to the block diagram of Figure 41, imaging device according to embodiment of the present invention (embodiment) is described.The embodiment of imaging device comprises video camera, digital camera and mobile phone camera.
As shown in figure 41, the solid state image pickup device (not shown) that provides in imaging section 501 is provided imaging device 500.The imaging optical system 502 of image is provided on the optically focused limit of imaging section 501.Have for the signal processing circuit etc. that is driven into signal processing part 503 as the drive circuit of section 501, processes the image that is become image at solid state image pickup device by opto-electronic conversion and be connected to imaging section 501.In addition, can be stored in the image storage part (not shown) by the handled picture signal of signal processing part.In imaging device 500, the solid state image pickup device 1～8 that is described in execution mode in the above can be used as solid state image pickup device.
In the imaging device 500 according to embodiment of the present invention, use according to the solid state image pickup device 1 of embodiment of the present invention or 2 or have the collector lens that consists of as shown in Figure 4 and a solid state image pickup device of anti-reflection layer.Therefore, to use the solid state image pickup device that can improve color rendition or resolution with identical as mentioned above mode, has the advantage that can record high quality graphic.
In addition, be not restricted to according to the imaging device 500 of embodiment of the present invention and have said structure, but can be applied to having the imaging device of arbitrary structures, so long as use the imaging device of solid state image pickup device.
In addition, can be used as each that monolithic type equipment or modular type equipment form solid state image pickup device 1～8, wherein, selectivity is packaged into picture section and signal processing part or optical system, and has imaging function.In addition, the present invention not only can be applied to solid state image pickup device, and can be applied to imaging device.In this case, can obtain to improve the effect of picture quality in imaging device.Herein, for example, imaging device refers to camera or the portable equipment with imaging function.In addition, the imaging of the image when " imaging " not only is included in camera and usually takes pictures, and comprise fingerprint detection on broader terms etc.
Should understand, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in claim scope of the present invention.
Claims (9)
1. solid state image pickup device with photographic department of the opto-electronic conversion of carrying out incident light comprises:
Be formed on the silicon oxide layer on the light receiving surface of described photographic department;
Ground floor is formed on described silicon oxide layer and the material that consists of group by the free following material of choosing forms: hafnium oxide (HfO
2), aluminium oxide (Al
2O
3), zirconia (ZrO
2), tantalum oxide (Ta
2O
5), titanium oxide (TiO
2), lanthana (La
2O
3), praseodymium oxide (Pr
2O
3), cerium oxide (CeO
2), neodymia (Nd
2O
3), promethium oxide (Pm
2O
3), samarium oxide (Sm
2O
3), europium oxide (Eu
2O
3), gadolinium oxide (Gd
2O
3), terbium oxide (Tb
2O
3), dysprosia (Dy
2O
3), holimium oxide (Ho
2O
3), erbium oxide (Er
2O
3), thulium oxide (Tm
2O
3), ytterbium oxide (Yb
2O
3), luteium oxide (Lu
2O
3), yittrium oxide (Y
2O
3), nitrogenize hafnium layer, aln layer, nitrogen hafnium oxide layer and aluminum oxynitride layer;
The second layer is formed on described ground floor and the material that consists of group by the free following material of choosing forms: hafnium oxide (HfO
2), aluminium oxide (Al
2O
3), zirconia (ZrO
2), tantalum oxide (Ta
2O
5), titanium oxide (TiO
2), lanthana (La
2O
3), praseodymium oxide (Pr
2O
3), cerium oxide (CeO
2), neodymia (Nd
2O
3), promethium oxide (Pm
2O
3), samarium oxide (Sm
2O
3), europium oxide (Eu
2O
3), gadolinium oxide (Gd
2O
3), terbium oxide (Tb
2O
3), dysprosia (Dy
2O
3), holimium oxide (Ho
2O
3), erbium oxide (Er
2O
3), thulium oxide (Tm
2O
3), ytterbium oxide (Yb
2O
3), luteium oxide (Lu
2O
3), yittrium oxide (Y
2O
3), nitrogenize hafnium layer, aln layer, nitrogen hafnium oxide layer and aluminum oxynitride layer; And
Be formed on the void coalescence layer on the described light receiving surface of described photographic department.
2. solid state image pickup device according to claim 1 further comprises:
Insulating barrier is formed on the described second layer.
3. solid state image pickup device according to claim 1,
Wherein, be provided with the peripheral circuit portion that forms peripheral circuit on the sidepiece of described photographic department, and
Insulating barrier is formed between the surface of described peripheral circuit portion and described ground floor, the second layer, makes the distance on described surface of described ground floor, the second layer and described peripheral circuit portion greater than the distance on the surface of described ground floor, the second layer and described photographic department.
4. solid state image pickup device according to claim 1,
Wherein, be provided with the peripheral circuit portion that forms peripheral circuit on the sidepiece of described photographic department, and
The insulating barrier that is between described peripheral circuit portion and described ground floor, the second layer is constituted as the laminar structure with one or more layers that comprise silicon oxide layer, silicon nitride layer and silicon oxynitride layer.
5. solid state image pickup device according to claim 1 further comprises:
Each has a plurality of pixel section that incident light is converted to the photographic department of the signal of telecommunication; And
The wiring layer that arranges on the surface of the semiconductor substrate that is formed with described pixel section,
Wherein, described solid-state imaging device be set in described photographic department receive from the rear surface irradiation type imaging device of the light of a side incident of the surface opposite that forms described wiring layer.
6. the solid state image pickup device manufacture method of the photographic department of a opto-electronic conversion that form to carry out incident light in semiconductor substrate comprises the following steps:
Form ground floor above the described photographic department of described semiconductor substrate, described ground floor is formed by the material that the free following material of choosing consists of group: hafnium oxide (HfO
2), aluminium oxide (Al
2O
3), zirconia (ZrO
2), tantalum oxide (Ta
2O
5), titanium oxide (TiO
2), lanthana (La
2O
3), praseodymium oxide (Pr
2O
3), cerium oxide (CeO
2), neodymia (Nd
2O
3), promethium oxide (Pm
2O
3), samarium oxide (Sm
2O
3), europium oxide (Eu
2O
3), gadolinium oxide (Gd
2O
3), terbium oxide (Tb
2O
3), dysprosia (Dy
2O
3), holimium oxide (Ho
2O
3), erbium oxide (Er
2O
3), thulium oxide (Tm
2O
3), ytterbium oxide (Yb
2O
3), luteium oxide (Lu
2O
3), yittrium oxide (Y
2O
3), nitrogenize hafnium layer, aln layer, nitrogen hafnium oxide layer and aluminum oxynitride layer;
Form the second layer on described ground floor, the described second layer is formed by the material that the free following material of choosing consists of group: hafnium oxide (HfO
2), aluminium oxide (Al
2O
3), zirconia (ZrO
2), tantalum oxide (Ta
2O
5), titanium oxide (TiO
2), lanthana (La
2O
3), praseodymium oxide (Pr
2O
3), cerium oxide (CeO
2), neodymia (Nd
2O
3), promethium oxide (Pm
2O
3), samarium oxide (Sm
2O
3), europium oxide (Eu
2O
3), gadolinium oxide (Gd
2O
3), terbium oxide (Tb
2O
3), dysprosia (Dy
2O
3), holimium oxide (Ho
2O
3), erbium oxide (Er
2O
3), thulium oxide (Tm
2O
3), ytterbium oxide (Yb
2O
3), luteium oxide (Lu
2O
3), yittrium oxide (Y
2O
3), nitrogenize hafnium layer, aln layer, nitrogen hafnium oxide layer and aluminum oxynitride layer; And
Form the void coalescence layer on the light receiving surface of described photographic department by described ground floor, the second layer.
7. solid state image pickup device manufacture method according to claim 6,
Wherein, use atomic layer deposition method to form ground floor; And
Use physical vaporous deposition to form the second layer.
8. solid state image pickup device manufacture method according to claim 7,
The simultaneous oxidation silicon layer that wherein forms described ground floor is formed between described semiconductor substrate and described ground floor.
9. imaging device comprises:
Light-gathering optics section assembles incident light;
Solid state image pickup device is received in the described incident light of assembling in described light-gathering optics section, and the light that receives is carried out opto-electronic conversion; And
Signal processing part is processed by the signal charge of opto-electronic conversion,
Wherein, described solid state image pickup device comprises:
Be formed on the silicon oxide layer on the light receiving surface of photographic department of described solid state image pickup device of the opto-electronic conversion of carrying out described incident light;
Ground floor is formed on described silicon oxide layer and the material that consists of group by the free following material of choosing forms: hafnium oxide (HfO
2), aluminium oxide (Al
2O
3), zirconia (ZrO
2), tantalum oxide (Ta
2O
5), titanium oxide (TiO
2), lanthana (La
2O
3), praseodymium oxide (Pr
2O
3), cerium oxide (CeO
2), neodymia (Nd
2O
3), promethium oxide (Pm
2O
3), samarium oxide (Sm
2O
3), europium oxide (Eu
2O
3), gadolinium oxide (Gd
2O
3), terbium oxide (Tb
2O
3), dysprosia (Dy
2O
3), holimium oxide (Ho
2O
3), erbium oxide (Er
2O
3), thulium oxide (Tm
2O
3), ytterbium oxide (Yb
2O
3), luteium oxide (Lu
2O
3), yittrium oxide (Y
2O
3), nitrogenize hafnium layer, aln layer, nitrogen hafnium oxide layer and aluminum oxynitride layer;
The second layer is formed on described ground floor and the material that consists of group by the free following material of choosing forms: hafnium oxide (HfO
2), aluminium oxide (Al
2O
3), zirconia (ZrO
2), tantalum oxide (Ta
2O
5), titanium oxide (TiO
2), lanthana (La
2O
3), praseodymium oxide (Pr
2O
3), cerium oxide (CeO
2), neodymia (Nd
2O
3), promethium oxide (Pm
2O
3), samarium oxide (Sm
2O
3), europium oxide (Eu
2O
3), gadolinium oxide (Gd
2O
3), terbium oxide (Tb
2O
3), dysprosia (Dy
2O
3), holimium oxide (Ho
2O
3), erbium oxide (Er
2O
3), thulium oxide (Tm
2O
3), ytterbium oxide (Yb
2O
3), luteium oxide (Lu
2O
3), yittrium oxide (Y
2O
3), nitrogenize hafnium layer, aln layer, nitrogen hafnium oxide layer and aluminum oxynitride layer; And
Be formed on the void coalescence layer on the described light receiving surface of described photographic department.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007265287A JP4803153B2 (en) | 2007-05-07 | 2007-10-11 | Solid-state imaging device, manufacturing method thereof, and imaging device |
| JP2007-265287 | 2007-10-11 | ||
| JP2007265287 | 2007-10-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101409301A CN101409301A (en) | 2009-04-15 |
| CN101409301B true CN101409301B (en) | 2013-06-26 |
Family
ID=40602692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810161899XA Active CN101409301B (en) | 2007-10-11 | 2008-10-13 | Solid state imaging device, its manufacturing method, and imaging device |
Country Status (2)
| Country | Link |
|---|---|
| KR (2) | KR101531055B1 (en) |
| CN (1) | CN101409301B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5418049B2 (en) * | 2009-08-03 | 2014-02-19 | ソニー株式会社 | Solid-state imaging device, manufacturing method thereof, and imaging apparatus |
| JP5306141B2 (en) * | 2009-10-19 | 2013-10-02 | 株式会社東芝 | Solid-state imaging device |
| JP5663925B2 (en) | 2010-03-31 | 2015-02-04 | ソニー株式会社 | Solid-state imaging device, manufacturing method thereof, and electronic apparatus |
| JP5581954B2 (en) * | 2010-10-07 | 2014-09-03 | ソニー株式会社 | Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus |
| US9153490B2 (en) | 2011-07-19 | 2015-10-06 | Sony Corporation | Solid-state imaging device, manufacturing method of solid-state imaging device, manufacturing method of semiconductor device, semiconductor device, and electronic device |
| US9379275B2 (en) * | 2012-01-31 | 2016-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for reducing dark current in image sensors |
| JP2014086553A (en) * | 2012-10-23 | 2014-05-12 | Toshiba Corp | Solid-state imaging device and method of manufacturing solid-state imaging device |
| JP2015032717A (en) * | 2013-08-02 | 2015-02-16 | 株式会社東芝 | Solid-state imaging device and camera module |
| TWI709235B (en) * | 2013-11-29 | 2020-11-01 | 日商索尼半導體解決方案公司 | Solid-state imaging element, its manufacturing method and electronic equipment |
| KR102201594B1 (en) * | 2014-09-18 | 2021-01-11 | 에스케이하이닉스 주식회사 | Image sensor having anti-reflection layer and fabricating method thereof |
| CN106935605A (en) * | 2017-03-10 | 2017-07-07 | 豪威科技(上海)有限公司 | Cmos image sensor and forming method thereof |
| US11320568B2 (en) | 2018-05-11 | 2022-05-03 | Corning Incorporated | Curved surface films and methods of manufacturing the same |
| CN112436026A (en) * | 2020-12-06 | 2021-03-02 | 联合微电子中心有限责任公司 | Method for reducing dark current of back-illuminated image sensor and sensor thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1825609A (en) * | 2005-02-21 | 2006-08-30 | 索尼株式会社 | Solid-state imager device, drive method of solid-state imager device and camera apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4979893B2 (en) * | 2005-03-23 | 2012-07-18 | ソニー株式会社 | Physical quantity distribution detection device, physical information acquisition method, and physical information acquisition device |
| JP2006269789A (en) * | 2005-03-24 | 2006-10-05 | Toshiba Corp | Semiconductor device and manufacturing method thereof |
| JP4940607B2 (en) * | 2005-09-22 | 2012-05-30 | ソニー株式会社 | Solid-state imaging device, manufacturing method thereof, and camera |
-
2008
- 2008-10-10 KR KR1020080099843A patent/KR101531055B1/en active IP Right Grant
- 2008-10-13 CN CN200810161899XA patent/CN101409301B/en active Active
-
2015
- 2015-02-25 KR KR1020150026536A patent/KR101596629B1/en active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1825609A (en) * | 2005-02-21 | 2006-08-30 | 索尼株式会社 | Solid-state imager device, drive method of solid-state imager device and camera apparatus |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2007-88305A 2007.04.05 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090037362A (en) | 2009-04-15 |
| KR20150035878A (en) | 2015-04-07 |
| CN101409301A (en) | 2009-04-15 |
| KR101596629B1 (en) | 2016-02-22 |
| KR101531055B1 (en) | 2015-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101409301B (en) | Solid state imaging device, its manufacturing method, and imaging device | |
| US10770500B2 (en) | Solid state imaging device for reducing dark current | |
| CN102184932B (en) | Solid-state imaging device, manufacturing method for the same, and imaging apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |