CN101393843A - Cleaning method after ion injection - Google Patents
Cleaning method after ion injection Download PDFInfo
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- CN101393843A CN101393843A CNA2007100463111A CN200710046311A CN101393843A CN 101393843 A CN101393843 A CN 101393843A CN A2007100463111 A CNA2007100463111 A CN A2007100463111A CN 200710046311 A CN200710046311 A CN 200710046311A CN 101393843 A CN101393843 A CN 101393843A
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Abstract
A cleaning method used after ion injection includes the steps as follows: a semiconductor substrate is provided; the semiconductor substrate is subjected to the operation of ion injection; an oxidation cleaning solution is utilized for carting out a first cleaning operation on the semiconductor substrate after the operation of ion injection; a basic cleaning solution is prepared, and the pH value of the basic cleaning solution is larger than 8; and the basic cleaning solution is utilized for carting out a second cleaning operation on the semiconductor substrate. The size of a recess generated on the ion injection surface of the semiconductor substrate can be reduced after the cleaning operations are finished.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, the cleaning method after particularly a kind of ion injects.
Background technology
It is the standard technique of the dopant material that changes conductance being introduced Semiconductor substrate that ion injects.In ion implant systems, needed dopant material is ionized in ion source, ion is accelerated into the surface that is drawn towards Semiconductor substrate behind the ion beam with predetermined energy, and the energetic ion in the ion beam is infiltrated semi-conducting material and is mounted among the lattice of semi-conducting material.
In the practice, comprise in the operation in execution polysilicon doping and formation light doping section and source/drain region the ion implant operation is carried out in the semiconductor substrate.Described light doping section comprises the lightly doped drain injection, and (Lightly Doped Drain, LDD) district and pocket type (Pocket) ion implanted region, described light doping section are used to define the leakage expansion area, source of MOS device.LDD impurity is positioned at grid lower semiconductor substrate inner close fitting channel region edge, and Pocket impurity is positioned at below, semiconductor-based end LDD district and is close to the channel region edge, is source-drain area the impurity concentration gradient is provided.
After carrying out the ion implant operation, need order that cleaning operation is carried out at the described semiconductor-based end usually, to remove the pollution that described ion implant operation caused the described semiconductor-based end.The cleaning method that relates to comprises: on October 4th, 2006, disclosed publication number was the cleaning method after a kind of light dope ion injection that provides in the Chinese patent application of " CN 1842896A ", the described semiconductor-based end after promptly utilizing SPM and SC1 solution order or cleaning the injection of light dope ion simultaneously.
As shown in Figure 1, in the practice, the step of carrying out described cleaning operation comprises step 101: the semiconductor-based end is provided; Step 102: utilize SPM (mixed solution of sulfuric acid and hydrogen peroxide) that first cleaning operation is carried out at the described semiconductor-based end, described first cleaning operation continues 5 minutes; Step 103: utilize SPM that second cleaning operation is carried out at the described semiconductor-based end, described second cleaning operation continues 5 minutes; Step 104: the limit access times N that determines SC1; Step 105: when the access times of SC1 during less than N, utilize SC1 (mixed solution of ammoniacal liquor and hydrogen peroxide) that the 3rd cleaning operation is carried out at the described semiconductor-based end, described the 3rd cleaning operation continues 9 minutes; When the access times of SC1 during greater than N, upgrade SC1, and utilize the SC1 after upgrading that the 3rd cleaning operation is carried out at the described semiconductor-based end, described the 3rd cleaning operation continues 9 minutes.
Yet; actual production is found; as shown in Figure 2; after finishing described cleaning operation; the ion at the described semiconductor-based end inject the depression (recess) 30 that the surface can form 5～10 dusts usually (Fig. 2 with the semiconductor-based end of experience light dope ion implantation process as example; the described semiconductor-based end 10 by on Semiconductor substrate the definition device active region and finish shallow trench isolation from; then forming grid 20 backs obtains); reduction along with device critical dimension; especially reduce to 65nm when following in critical dimension, the existence of above-mentioned depression will cause the increase of leakage current and the reduction of device electric property.How to reduce and finish the ion at the described semiconductor-based end behind the cleaning operation and inject the size that the surface produces depression and become those skilled in the art's problem demanding prompt solution.Optimize cleaning method and become the direction that solves the problems of the technologies described above.
Summary of the invention
The invention provides the cleaning method after a kind of ion injects, the ion that can reduce the described semiconductor-based end after finishing cleaning operation injects the size that the surface produces depression.
Cleaning method after a kind of ion provided by the invention injects comprises:
The semiconductor-based end, be provided;
To carrying out the ion implant operation in the described semiconductor-based end;
First cleaning operation is carried out at the described semiconductor-based end after utilizing the oxidation cleaning solution to experience ion implant operation;
The configuration basic cleaning solution, the pH value of described basic cleaning solution is greater than 8;
Utilize described basic cleaning solution that second cleaning operation is carried out at the described semiconductor-based end.
Alternatively, utilize described oxidation cleaning solution to carry out first cleaning operation and comprise that the mixed solution that utilizes sulfuric acid and ozone carries out first cleaning operation; Alternatively, utilize described oxidation cleaning solution to carry out first cleaning operation and comprise that the mixed solution that utilizes sulfuric acid and hydrogen peroxide carries out first cleaning operation; Alternatively, utilize described oxidation cleaning solution carry out first cleaning operation comprise the order utilize the aqueous solution of ozone and hydrochloric acid solution to carry out first cleaning operation.
Alternatively, when order utilized the aqueous solution of ozone and hydrochloric acid solution to carry out first cleaning operation, the step of carrying out first cleaning operation comprised:
Utilize the aqueous solution of ozone to carry out the oxidation pre-cleaning operation;
Pre-cleaning operation after utilizing hydrochloric acid solution to the execution oxidation of the semiconductor-based end of experience oxidation pre-cleaning operation;
To carrying out test operation in the prewashed described semiconductor-based end after the experience oxidation;
If test passes, cleaning requirement is satisfied at then definite described semiconductor-based end;
If test failure, then carry out the operation of prerinse and test after the oxidation prerinse, oxidation at the described semiconductor-based end, satisfy cleaning requirement until definite described semiconductor-based end.
Alternatively, when order utilized the aqueous solution of ozone and hydrochloric acid solution to carry out first cleaning operation, the step of carrying out first cleaning operation comprised:
Utilize the aqueous solution of ozone that the oxidation pre-cleaning operation is carried out at the described semiconductor-based end;
Determine the execution frequency n of described oxidation pre-cleaning operation, n is a natural number;
To pre-cleaning operation after the execution oxidation of the described semiconductor-based end after the experience oxidation prerinse;
To alternately carrying out pre-cleaning operation after the oxidation prerinse at n-1 the described semiconductor-based end and the oxidation in the prewashed described semiconductor-based end after the experience oxidation.
Alternatively, described basic cleaning solution is the mixed solution of ammoniacal liquor and hydrogen peroxide; Alternatively, the duration of described second cleaning operation is 200～300 seconds; Alternatively, the temperature selected for use of described second cleaning operation is 20～30 degrees centigrade; Alternatively, the equipment of carrying out described second cleaning operation is DNS FC3000 or FSI ZETA.
Compared with prior art, the present invention has the following advantages:
Cleaning method after ion provided by the invention injects, by selecting the cleaning solution of independent configuration for use, can reduce the cleaning content of by-products that remains in the described basic cleaning solution, optimize the cleaning performance of particle contamination, then, reduce the duration when utilizing described basic cleaning solution to carry out second cleaning operation, and then, reduce the erosion amount that clean semiconductor-based basal surface is etched, can make the generation that reduces described semiconductor-based basal surface depression become possibility.
Description of drawings
Fig. 1 is for illustrating the schematic flow sheet of the cleaning process after the prior art intermediate ion injects;
Fig. 2 injects the structural representation at the described semiconductor-based end of back cleaning process for experience ion in the explanation prior art;
Fig. 3 is the schematic flow sheet of the cleaning process after the ion of the explanation embodiment of the invention injects.
Embodiment
Although below with reference to accompanying drawings the present invention is described in more detail, wherein represented the preferred embodiments of the present invention, be to be understood that those skilled in the art can revise the present invention described here and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensive instruction for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.In the following description, be not described in detail known function and structure, because they can make the present invention because unnecessary details and confusion.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details, for example, change into another embodiment by an embodiment according to relevant system or relevant commercial restriction to realize developer's specific objective.In addition, will be understood that this development may be complicated and time-consuming, but only be routine work for those skilled in the art with advantage of the present invention.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.Will be clearer according to following explanation and claims advantages and features of the invention.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
As shown in Figure 3, use method provided by the invention, the step of cleaning the semiconductor-based end after ion injects comprises: the semiconductor-based end is provided; To carrying out the ion implant operation in the described semiconductor-based end; First cleaning operation is carried out at the described semiconductor-based end after utilizing the oxidation cleaning solution to experience ion implant operation; The configuration basic cleaning solution, the pH value of described basic cleaning solution is greater than 8; Utilize described basic cleaning solution that second cleaning operation is carried out at the described semiconductor-based end.
Use method provided by the invention, the concrete steps of cleaning the semiconductor-based end after ion injects comprise:
Step 301: the semiconductor-based end is provided.
For light dope ion implant operation, the described semiconductor-based end by go up the definition device active region in Semiconductor substrate (substrate) and finish shallow trench isolation from, obtain after forming grid then.
For source/drain region ion implant operation, the described semiconductor-based end by definition device active region on the Semiconductor substrate and finish shallow trench isolation from, obtain after forming grid and side wall then around described grid.
For polysilicon doping operation, the described semiconductor-based end by definition device active region on the Semiconductor substrate and finish shallow trench isolation from, obtain after forming polysilicon layer then.
Described Semiconductor substrate comprises but is not limited to comprise the silicon materials of semiconductor element, and for example the silicon of monocrystalline, polycrystalline or non crystalline structure or SiGe (SiGe) also can be silicon-on-insulators (SOI).Described Semiconductor substrate also can comprise oxide layer, and described oxide layer materials comprises silicon dioxide (SiO
2), the silicon dioxide or the hafnium oxide (HfO of doping hafnium (Hf)
2).
Described light doping section and described source region and drain region are by forming after carrying out the operation of mixing definite zone at the described semiconductor-based end, and described doping operation utilizes ion implantation technology to carry out.
Stack combination or metal that described grid can comprise doped polycrystalline silicon, be formed by polysilicon and metal silicide.
Described side wall comprises the stack combination that stack combination that silicon dioxide or silicon dioxide and silicon oxynitride and/or silicon nitride forms or silicon dioxide, silicon oxynitride and/or silicon nitride, silicon dioxide form, perhaps a kind of in the stack combination that joins of the stack combination of silicon dioxide, silicon oxynitride, silicon nitride, silicon oxynitride and silicon dioxide formation and silicon dioxide and silicon oxynitride and/or silicon nitride spacer.
Step 302: to carrying out the ion implant operation in the described semiconductor-based end.
The doping particle that relates to comprises boron (B), fluoridizes inferior boron (BF
2), arsenic (As), phosphorus (P) but or a kind of in other dopant material.
Step 303: first cleaning operation is carried out at the described semiconductor-based end after utilizing the oxidation cleaning solution to experience ion implant operation.
Described first cleaning operation is in order to remove the polymer that forms at described semiconductor-based basal surface behind the experience ion implant operation.
Utilizing described oxidation cleaning solution to carry out first cleaning operation comprises and utilizes SOM (mixed solution of sulfuric acid and ozone) or SPM (mixed solution of sulfuric acid and hydrogen peroxide) to carry out first cleaning operation respectively; Perhaps, order is utilized ozone (O
3) the aqueous solution and hydrochloric acid solution carry out first cleaning operation.
Sustainable 200～500 seconds of described first cleaning operation; The temperature range that described first cleaning operation is selected for use can be 120～130 degrees centigrade.
When order utilized the aqueous solution of ozone and hydrochloric acid solution to carry out first cleaning operation, the step of carrying out first cleaning operation can comprise: utilize the aqueous solution of ozone to carry out the oxidation pre-cleaning operation; Pre-cleaning operation after utilizing hydrochloric acid solution to the execution oxidation of the semiconductor-based end of experience oxidation pre-cleaning operation; To carrying out test operation in the prewashed described semiconductor-based end after the experience oxidation; If test passes, cleaning requirement is satisfied at then definite described semiconductor-based end; If test failure, then carry out the operation of prerinse and test after the oxidation prerinse, oxidation at the described semiconductor-based end, satisfy cleaning requirement until definite described semiconductor-based end.
In addition, when order utilized the aqueous solution of ozone and hydrochloric acid solution to carry out first cleaning operation, the step of carrying out first cleaning operation also can comprise: utilize the aqueous solution of ozone that the oxidation pre-cleaning operation is carried out at the described semiconductor-based end; Determine the execution frequency n of described oxidation pre-cleaning operation, n is a natural number; To pre-cleaning operation after the execution oxidation of the described semiconductor-based end after the experience oxidation prerinse; To alternately carrying out pre-cleaning operation after the oxidation prerinse at n-1 the described semiconductor-based end and the oxidation in the prewashed described semiconductor-based end after the experience oxidation.
When the aqueous solution that utilizes ozone was carried out the oxidation pre-cleaning operation to the described semiconductor-based end, the concentration of the aqueous solution of described ozone can be 15～50ppm.
The present inventor thinks, when using hydrochloric acid solution and finishing described pre-cleaning operation, the concentration of the hydrochloric acid solution of selecting for use is less than 0.5%.
The time that described pre-cleaning operation continues determines that according to working condition and product requirement as example, the time that described pre-cleaning operation continues can be 10～100 seconds.
Step 304: the configuration basic cleaning solution, the pH value of described basic cleaning solution is greater than 8.
Described basic cleaning solution is in order to remove behind the experience ion implant operation at the residual particle contamination of described semiconductor-based basal surface.The pH value of described basic cleaning solution is beneficial to the removal effect that strengthens described particle contamination greater than 8.
In the practice, described basic cleaning solution can be selected SC1 cleaning solution (mixed solution of ammoniacal liquor and hydrogen peroxide) for use.After first cleaning operation is carried out at the described semiconductor-based end, dispose described basic cleaning solution, carry out follow-up second cleaning operation in order to the described basic cleaning solution of utilizing configuration; That is the access times of the basic cleaning solution of selecting for use when, carrying out follow-up second cleaning operation are only for once.
The present inventor thinks, in the traditional handicraft, needs for cost control, the access times of cleaning solution are usually greater than once, the accessory substance that causes removed particle contamination to form still remains in the described cleaning solution, the accessory substance that remains in the described cleaning solution will reduce the removal effect of described cleaning solution to particle contamination, cause the common method that needs employing to prolong scavenging period to strengthen the cleaning performance of described particle contamination, but, the long cleaning operation duration easily causes clean semiconductor-based basal surface to be etched, then, described erosion extends to the below of particle contamination of the described semiconductor-based end, and then, cause at described semiconductor-based basal surface and form depression.
The present inventor's undergoing analysis proposes with the practice back, along with dwindling of device critical dimension, the ratio that the cost of cleaning operation occupies in the device total manufacturing cost reduces to some extent, reduce the access times of cleaning solution, even, select the cleaning solution of independent configuration for use, can reduce the cleaning content of by-products that remains in the described cleaning solution, optimize the cleaning performance of described particle contamination, then, reduce the duration when utilizing described basic cleaning solution to carry out second cleaning operation, and then, reduce the erosion amount that clean semiconductor-based basal surface is etched, become possibility so that reduce the generation of described semiconductor-based basal surface depression.
Step 305: utilize described basic cleaning solution that second cleaning operation is carried out at the described semiconductor-based end.
Sustainable 200～300 seconds of described second cleaning operation; The temperature range that described second cleaning operation is selected for use can be 20～30 degrees centigrade.The equipment of carrying out described second cleaning operation can be DNS FC3000 or FSI ZETA.
What need emphasize is that not elsewhere specified step all can use conventional methods acquisition, and concrete technological parameter is determined according to product requirement and process conditions.
Although the present invention has been described and has enough described embodiment in detail although describe by the embodiment at this, the applicant does not wish by any way the scope of claims is limited on this details.Other to those skilled in the art advantage and improvement are conspicuous.Therefore, relative broad range the invention is not restricted to represent and the specific detail of describing, equipment and the method and the illustrative example of expression.Therefore, can depart from these details and do not break away from the spirit and scope of the total inventive concept of applicant.
Claims (10)
1. the cleaning method after an ion injects is characterized in that, comprising:
The semiconductor-based end, be provided;
To carrying out the ion implant operation in the described semiconductor-based end;
First cleaning operation is carried out at the described semiconductor-based end after utilizing the oxidation cleaning solution to experience ion implant operation;
The configuration basic cleaning solution, the pH value of described basic cleaning solution is greater than 8;
Utilize described basic cleaning solution that second cleaning operation is carried out at the described semiconductor-based end.
2. the cleaning method after ion according to claim 1 injects is characterized in that: utilize described oxidation cleaning solution to carry out first cleaning operation and comprise that the mixed solution that utilizes sulfuric acid and ozone carries out first cleaning operation.
3. the cleaning method after ion according to claim 1 injects is characterized in that: utilize described oxidation cleaning solution to carry out first cleaning operation and comprise that the mixed solution that utilizes sulfuric acid and hydrogen peroxide carries out first cleaning operation.
4. the cleaning method after ion according to claim 1 injects is characterized in that: utilize described oxidation cleaning solution to carry out first cleaning operation and comprise that order utilizes the aqueous solution of ozone and hydrochloric acid solution to carry out first cleaning operation.
5. the cleaning method after ion according to claim 4 injects is characterized in that: when order utilized the aqueous solution of ozone and hydrochloric acid solution to carry out first cleaning operation, the step of carrying out first cleaning operation comprised:
Utilize the aqueous solution of ozone to carry out the oxidation pre-cleaning operation;
Pre-cleaning operation after utilizing hydrochloric acid solution to the execution oxidation of the semiconductor-based end of experience oxidation pre-cleaning operation;
To carrying out test operation in the prewashed described semiconductor-based end after the experience oxidation;
If test passes, cleaning requirement is satisfied at then definite described semiconductor-based end;
If test failure, then carry out the operation of prerinse and test after the oxidation prerinse, oxidation at the described semiconductor-based end, satisfy cleaning requirement until definite described semiconductor-based end.
6. the cleaning method after ion according to claim 4 injects is characterized in that: when order utilized the aqueous solution of ozone and hydrochloric acid solution to carry out first cleaning operation, the step of carrying out first cleaning operation comprised:
Utilize the aqueous solution of ozone that the oxidation pre-cleaning operation is carried out at the described semiconductor-based end;
Determine the execution frequency n of described oxidation pre-cleaning operation, n is a natural number;
To pre-cleaning operation after the execution oxidation of the described semiconductor-based end after the experience oxidation prerinse;
To alternately carrying out pre-cleaning operation after the oxidation prerinse at n-1 the described semiconductor-based end and the oxidation in the prewashed described semiconductor-based end after the experience oxidation.
7. the cleaning method after ion according to claim 1 injects, it is characterized in that: described basic cleaning solution is the mixed solution of ammoniacal liquor and hydrogen peroxide.
8. the cleaning method after ion according to claim 1 injects, it is characterized in that: the duration of described second cleaning operation is 200～300 seconds.
9. the cleaning method after ion according to claim 1 injects, it is characterized in that: the temperature that described second cleaning operation is selected for use is 20～30 degrees centigrade.
10. the cleaning method after ion according to claim 1 injects, it is characterized in that: the equipment of carrying out described second cleaning operation is DNS FC3000 or FSI ZETA.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100463111A CN101393843B (en) | 2007-09-20 | 2007-09-20 | Cleaning method after ion injection |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100463111A CN101393843B (en) | 2007-09-20 | 2007-09-20 | Cleaning method after ion injection |
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| CN101393843A true CN101393843A (en) | 2009-03-25 |
| CN101393843B CN101393843B (en) | 2010-06-09 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103548A (en) * | 2013-04-02 | 2014-10-15 | 中芯国际集成电路制造(上海)有限公司 | Wafer pre-cleaning method before oxidation of active region pad |
| CN107331598A (en) * | 2016-04-28 | 2017-11-07 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and preparation method, electronic installation |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6630074B1 (en) * | 1997-04-04 | 2003-10-07 | International Business Machines Corporation | Etching composition and use thereof |
| DE69916728T2 (en) * | 1998-08-28 | 2005-04-28 | Mitsubishi Materials Corp. | Method for cleaning a semiconductor substrate |
| CN100437912C (en) * | 2003-08-25 | 2008-11-26 | 松下电器产业株式会社 | Method for forming impurity-introduced layer, method for cleaning object to be processed, apparatus for introducing impurity and method for producing device |
-
2007
- 2007-09-20 CN CN2007100463111A patent/CN101393843B/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103548A (en) * | 2013-04-02 | 2014-10-15 | 中芯国际集成电路制造(上海)有限公司 | Wafer pre-cleaning method before oxidation of active region pad |
| CN104103548B (en) * | 2013-04-02 | 2018-02-13 | 中芯国际集成电路制造(上海)有限公司 | Chip pre-cleaning method before active area liner oxidation |
| CN107331598A (en) * | 2016-04-28 | 2017-11-07 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and preparation method, electronic installation |
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| CN101393843B (en) | 2010-06-09 |
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