CN101392364A - Pre-cleaning method of reactive system - Google Patents

Pre-cleaning method of reactive system Download PDF

Info

Publication number
CN101392364A
CN101392364A CNA2007100462142A CN200710046214A CN101392364A CN 101392364 A CN101392364 A CN 101392364A CN A2007100462142 A CNA2007100462142 A CN A2007100462142A CN 200710046214 A CN200710046214 A CN 200710046214A CN 101392364 A CN101392364 A CN 101392364A
Authority
CN
China
Prior art keywords
reactive system
temperature
cleaning method
cleaning
washing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007100462142A
Other languages
Chinese (zh)
Inventor
朴松源
何有丰
白杰
唐兆云
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Manufacturing International Shanghai Corp
Original Assignee
Semiconductor Manufacturing International Shanghai Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Manufacturing International Shanghai Corp filed Critical Semiconductor Manufacturing International Shanghai Corp
Priority to CNA2007100462142A priority Critical patent/CN101392364A/en
Publication of CN101392364A publication Critical patent/CN101392364A/en
Pending legal-status Critical Current

Links

Images

Abstract

The invention discloses a pre-cleaning method of a reaction system. The pre-cleaning method comprises the steps: a reaction system which comprises an ingress pipe and a reaction processing chamber is provided; pre-cleaning gas which contains catalytic gas is provided and the catalytic gas responds to a process applied to the reaction system; temperature increase is followed to ensure that the temperature in the reaction processing chamber is at least the reaction temperature; and the pre-cleaning is carried out in the ingress pipe and the reaction processing chamber with the temperature increased by the use of the pre-cleaning gas. The method can reduce the generation of fine particles.

Description

Pre-cleaning method of reactive system
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of pre-cleaning method of reactive system.
Background technology
The wafer heat process that relates in the semiconductor technology need be used various reactive systems widely, as deposit reactive system, etching reaction system and oxidation system etc.In the practice, after described heat treatment operation is finished, can residually have the rete and the position particulate thereon of certain thickness and distribution on the above-mentioned reactive system wall usually.After the experience heat treatment process, described particulate easily peels off.The particulate that peels off will and rest on the silicon chip with air movement, cause defective and yield rate to reduce.Thus, in the actual production,, adopt nitrogen (N usually for reducing particulate 2) reactive system is carried out regular pre-washing.
As shown in Figure 1, the step of pre-washing reactive system comprises: determine with first temperature and second temperature to be between the cooling area of cut off value, described first temperature is higher than second temperature; Carry out pretreatment operation, make to have first temperature in the described reactive system; Execution is by the cooling operation of described first temperature to described second temperature; After being cooled to described second temperature, carry out vacuum pumping and warming temperature, so that have temperature of reaction in the described reactive system at least.
t 1Represent first temperature; t 2Represent second temperature; t 0Represent temperature of reaction; The time that pretreatment operation continues is carried out in time period a representative; The time that the cooling operation continues is carried out in time period b representative; The time that vacuum pumping continues is carried out in time period c representative; Time period d representative is warming up to the time that continues after the temperature of reaction.
Yet actual production finds, use above-mentioned technology pre-washing reactive system after, particle removing effect is limited, how to strengthen particle removing effect and becomes those skilled in the art's problem demanding prompt solution.
On June 29th, 2005, disclosed publication number was for providing the method that reduces particulate in a kind of low pressure chemical vapor deposition equipment in the Chinese patent application of " CN1632164 ", comprise: at first carry out charging procedure, in order to set the state of low pressure chemical vapor deposition equipment, wherein comprise the program of pre-washing for the first time in the charging procedure; Secondly, promptly carry out handling procedure, in order to carry out chemical vapour deposition; Afterwards, carry out the discharge program, in order to reply the state of low pressure chemical vapor deposition equipment, wherein the discharge program comprises the program of pre-washing for the second time.
Obviously, in the aforesaid method, pre-washing is arranged in charging and discharge stage, can strengthens particle removing effect by increasing prewashed number of times.Yet because the above-mentioned charging stage represent setting of environmental parameter and reads and the self-correction and the affirmation of board, the described discharge stage is represented the recovery of described ambient condition, as exhaust, cooling etc.; That is, using aforesaid method is the pre-washing of carrying out reactive system in the board adjusting stage, both has been difficult to guarantee the pre-washing effect, and what be easy to again to cause to operate is complicated.
Summary of the invention
The invention provides a kind of pre-cleaning method of reactive system, can make the generation that reduces particulate become possibility.
A kind of pre-cleaning method of reactive system provided by the invention comprises:
Reactive system is provided, and described reactive system comprises ingress pipe and reaction treatment chamber;
Provide the pre-washing that comprises catalytic gas gas, the processing procedure that the corresponding described reactive system of described catalytic gas is used;
Carry out warming temperature, make the indoor temperature of described reaction treatment be at least temperature of reaction;
With the reaction treatment chamber execution pre-cleaning operation of described pre-washing gas and after heating up to described ingress pipe.
Alternatively, described reactive system is exclusively used in the TEOS processing procedure; Alternatively, described reactive system comprises the LPCVD system; Alternatively, before carrying out warming temperature, described pre-cleaning operation also comprises:
Determine with first temperature and second temperature to be between the cooling area of cut off value, described first temperature is higher than second temperature;
Carry out pretreatment operation, make to have first temperature in the described reactive system;
Execution is by the cooling operation of described first temperature to described second temperature;
After being cooled to described second temperature, carry out vacuum pumping.
Alternatively, described catalytic gas comprises a kind of in oxygen or the ozone; Alternatively, the flow range of described oxygen or ozone is 3~1000sccm; Alternatively, also comprise a kind of in nitrogen or the helium in the described pre-washing gas; Alternatively, the flow range of described nitrogen or helium is 0~15000sccm; Alternatively, described reactive system internal pressure scope is 10mT~250MT; Alternatively, described pre-cleaning operation time length scope is 10~90 minutes; Alternatively, described reactive system comprises the PECVD system; Alternatively, described catalytic gas comprises a kind of in oxygen or the ozone; Alternatively, the flow range of described oxygen or ozone is 500~2000sccm; Alternatively, also comprise a kind of in nitrogen or the helium in the described pre-washing gas; Alternatively, the flow range of described nitrogen or helium is 0~15000sccm; Alternatively, described reactive system internal pressure scope is 1~10Torr; Alternatively, described pre-cleaning operation time length scope is 2~20 seconds; Alternatively, the RF power range is 50~300W.
Compared with prior art, the present invention has the following advantages:
Pre-cleaning method of reactive system provided by the invention by comprise catalytic gas in pre-washing gas, can promote to adhere to the indoor TEOS that does not fully decompose of ingress pipe and reaction treatment and decompose, and can make the generation that reduces particulate become possibility.
Description of drawings
Fig. 1 is the sequential synoptic diagram of pre-washing reactive system in the explanation prior art;
Fig. 2 is the schematic flow sheet of the pre-washing reactive system of the explanation embodiment of the invention;
Fig. 3 is the reactive system structural representation of the explanation embodiment of the invention.
Embodiment
Although below with reference to accompanying drawings the present invention is described in more detail, wherein represented the preferred embodiments of the present invention, be to be understood that those skilled in the art can revise the present invention described here and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensive instruction for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.In the following description, be not described in detail known function and structure, because they can make the present invention because unnecessary details and confusion.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details, for example, change into another embodiment by an embodiment according to relevant system or relevant commercial restriction to realize developer's specific objective.In addition, will be understood that this development may be complicated and time-consuming, but only be routine work for those skilled in the art with advantage of the present invention.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.Will be clearer according to following explanation and claims advantages and features of the invention.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
The step of using method pre-washing reactive system provided by the invention comprises: reactive system is provided, and described reactive system comprises ingress pipe and reaction treatment chamber; Provide the pre-washing that comprises catalytic gas gas, the processing procedure that the corresponding described reactive system of described catalytic gas is used; Carry out warming temperature, make the indoor temperature of described reaction treatment be at least temperature of reaction; With the reaction treatment chamber execution pre-cleaning operation of described pre-washing gas and after heating up to described ingress pipe.
As shown in Figure 2, the concrete steps of using method pre-washing reactive system provided by the invention comprise:
Step 201: reactive system is provided.
As shown in Figure 3, described reactive system comprises ingress pipe 100 and reaction treatment chamber 200, as example, and the corresponding TEOS processing procedure of described reactive system.TEOS enters described reaction treatment chamber 200 (in the presents, easy for describing, omit gas exhausting device that described reactive system comprises etc.) via described ingress pipe 100.Described reactive system comprises LPCVD system and PECVD system.Usually, provide the reactive system that is exclusively used in the TEOS processing procedure.
Current, by TEOS being decomposed, at this moment, need sufficiently high reaction conditions, as temperature etc., so that the particle defects that has in the described rete that obtains satisfies technology and product requirement to obtain oxide membranous layer.Yet actual production finds, along with dwindling of device critical size, especially critical size is reduced to 65 nanometers and when following, the particle defects that has in the described rete that utilizes traditional technology to obtain is difficult to satisfy technology and product requirement.The particle defects that how to reduce in the rete becomes the subject matter that the present invention solves.
The present inventor thinks after analyzing, along with dwindling of device critical size, the reason that particle defects in the rete is difficult to satisfy technology and product requirement is: for 65 nanometers and following technology thereof, need usually to reduce heat budget, directly translate into the reduction temperature of reaction; Reduction along with temperature of reaction, it is no longer abundant that the decomposition of TEOS becomes, the TEOS that fully decomposes does not adhere on described ingress pipe and the reaction treatment locular wall, along with the reaction continue carry out, the TEOS that adheres on described ingress pipe and the reaction treatment locular wall easily comes off, and forms particle defects in described rete.
The present inventor thinks after analyzing that the pre-washing effect that strengthens described reactive system becomes the direction that strengthens described particle defects removal effect.In the traditional technology, adopted the technology of utilizing the described reactive system of nitrogen pre-washing, still be difficult to control described particle defects, its reason is, nitrogen only plays rolling action to the TEOS that does not fully decompose, that is, the TEOS that fully decomposes does not just carry via nitrogen and is detached described reactive system, and particle removing effect is limited naturally.
After the present inventor's undergoing analysis and the practice, a kind of pre-cleaning method of reactive system is provided, utilization comprises the pre-washing gas pre-washing reaction treatment chamber of catalytic gas, can make pre-washing gas after carrying the TEOS that does not fully decompose, also can promote the decomposition of TEOS, that is, adhere to the TEOS that fully decomposes on described ingress pipe and the reaction treatment locular wall, make to strengthen particle removing effect and become possibility by minimizing.Wherein, part TEOS decomposition rear oxidation thing can be detached described reaction treatment chamber with described pre-washing gas; Part TEOS decomposes the rear oxidation thing will form rete on described reaction treatment locular wall, described rete can utilize follow-up original position pre-cleaning operation to remove.
Step 202: provide the pre-washing that comprises catalytic gas gas, the processing procedure that the corresponding described reactive system of described catalytic gas is used.
Described catalytic gas comprises oxygen (O 2) or ozone (O 3) in a kind of.Use described catalytic gas pre-washing reactive system and help lend some impetus to the TEOS decomposition of fully not decomposing, make the enhancing particle removing effect become possibility.
Also can comprise nitrogen (N in the described pre-washing gas 2) or helium (He) in a kind of.
Step 203: carry out warming temperature, make the indoor temperature of described reaction treatment be at least temperature of reaction.
As example, for the LPCVD system, described range of reaction temperature is 500~800 degrees centigrade, is preferably 600~780 degrees centigrade.
Before carrying out warming temperature, described pre-cleaning operation also comprises: determine with first temperature and second temperature to be between the cooling area of cut off value, described first temperature is higher than second temperature; Carry out pretreatment operation, make to have first temperature in the described reactive system; Execution is by the cooling operation of described first temperature to described second temperature; After being cooled to described second temperature, carry out vacuum pumping.
Wherein, described vacuum pumping can be carried out simultaneously with described warming temperature.
Described first temperature is 450~550 degrees centigrade; Between described cooling area be 150~450 degrees centigrade; Described second temperature is 100~300 degrees centigrade; After carrying out vacuum pumping, the internal pressure scope is in the reaction treatment chamber: 10~250MT.
For the PECVD system, described range of reaction temperature is 350~450 degrees centigrade.
Carry out the temperature value that obtains to be higher than temperature of reaction behind the described warming temperature,, can strengthen the effect that the particulate that may peel off peels off under temperature of reaction in temperature-rise period, and then strengthen the removal effect of particulate as 800~850 degrees centigrade.
Step 204: with the reaction treatment chamber execution pre-cleaning operation of described pre-washing gas and after heating up to described ingress pipe.
As example, for the LPCVD system, comprise with the processing condition of the described reactive system of oxygen pre-washing: the oxygen flow scope is 3~1000sccm, is preferably 400~600sccm; Reactive system internal pressure scope is 10mT~250mT; The pre-washing time range is 10~90 minutes.
For the PECVD system, comprise with the processing condition of the described reactive system of oxygen pre-washing: the oxygen flow scope is 500~2000sccm; Reactive system internal pressure scope is 1~10Torr; The pre-washing time range is 2~20 seconds; The RF power range is 50~300W.
When comprising nitrogen or helium in the described pre-washing gas, the flow range of described nitrogen or helium is 0~15000sccm.
What need emphasize is that not elsewhere specified step all can use conventional methods acquisition, and concrete processing parameter is determined according to product requirement and processing condition.
Pre-cleaning method of reactive system provided by the invention by comprise catalytic gas in pre-washing gas, can promote to adhere to the indoor TEOS that does not fully decompose of ingress pipe and reaction treatment and decompose, and can make the generation that reduces particulate become possibility.
Although the present invention has been described and has enough described embodiment in detail although describe by the embodiment at this, the applicant does not wish by any way the scope of claims is limited on this details.Other to those skilled in the art advantage and improvement are conspicuous.Therefore, relative broad range the invention is not restricted to represent and the specific detail of describing, equipment and the method and the illustrative example of expression.Therefore, can depart from these details and do not break away from the spirit and scope of the total inventive concept of applicant.

Claims (18)

1. a pre-cleaning method of reactive system is characterized in that, comprising:
Reactive system is provided, and described reactive system comprises ingress pipe and reaction treatment chamber;
Provide the pre-washing that comprises catalytic gas gas, the processing procedure that the corresponding described reactive system of described catalytic gas is used;
Carry out warming temperature, make the indoor temperature of described reaction treatment be at least temperature of reaction;
With the reaction treatment chamber execution pre-cleaning operation of described pre-washing gas and after heating up to described ingress pipe.
2. pre-cleaning method of reactive system according to claim 1 is characterized in that: described reactive system is exclusively used in the TEOS processing procedure.
3. pre-cleaning method of reactive system according to claim 1 is characterized in that: described reactive system comprises the LPCVD system.
4. pre-cleaning method of reactive system according to claim 3 is characterized in that: before carrying out warming temperature, described pre-cleaning operation also comprises:
Determine with first temperature and second temperature to be between the cooling area of cut off value, described first temperature is higher than second temperature;
Carry out pretreatment operation, make to have first temperature in the described reactive system;
Execution is by the cooling operation of described first temperature to described second temperature;
After being cooled to described second temperature, carry out vacuum pumping.
5. according to claim 1 or 3 described pre-cleaning method of reactive system, it is characterized in that: described catalytic gas comprises a kind of in oxygen or the ozone.
6. pre-cleaning method of reactive system according to claim 5 is characterized in that: the flow range of described oxygen or ozone is 3~1000sccm.
7. pre-cleaning method of reactive system according to claim 5 is characterized in that: also comprise a kind of in nitrogen or the helium in the described pre-washing gas.
8. pre-cleaning method of reactive system according to claim 7 is characterized in that: the flow range of described nitrogen or helium is 0~15000sccm.
9. according to claim 1 or 3 described pre-cleaning method of reactive system, it is characterized in that: described reactive system internal pressure scope is 10mT~250mT.
10. according to claim 1 or 3 described pre-cleaning method of reactive system, it is characterized in that: described pre-cleaning operation time length scope is 10~90 minutes.
11. pre-cleaning method of reactive system according to claim 1 is characterized in that: described reactive system comprises the PECVD system.
12. pre-cleaning method of reactive system according to claim 11 is characterized in that: described catalytic gas comprises a kind of in oxygen or the ozone.
13. pre-cleaning method of reactive system according to claim 12 is characterized in that: the flow range of described oxygen or ozone is 500~2000sccm.
14. pre-cleaning method of reactive system according to claim 12 is characterized in that: also comprise a kind of in nitrogen or the helium in the described pre-washing gas.
15. pre-cleaning method of reactive system according to claim 14 is characterized in that: the flow range of described nitrogen or helium is 0~15000sccm.
16. pre-cleaning method of reactive system according to claim 11 is characterized in that: described reactive system internal pressure scope is 1~10Torr.
17. pre-cleaning method of reactive system according to claim 11 is characterized in that: described pre-cleaning operation time length scope is 2~20 seconds.
18. pre-cleaning method of reactive system according to claim 11 is characterized in that: the RF power range is 50~300W.
CNA2007100462142A 2007-09-17 2007-09-17 Pre-cleaning method of reactive system Pending CN101392364A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA2007100462142A CN101392364A (en) 2007-09-17 2007-09-17 Pre-cleaning method of reactive system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2007100462142A CN101392364A (en) 2007-09-17 2007-09-17 Pre-cleaning method of reactive system

Publications (1)

Publication Number Publication Date
CN101392364A true CN101392364A (en) 2009-03-25

Family

ID=40492872

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007100462142A Pending CN101392364A (en) 2007-09-17 2007-09-17 Pre-cleaning method of reactive system

Country Status (1)

Country Link
CN (1) CN101392364A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103643220A (en) * 2013-11-22 2014-03-19 上海华力微电子有限公司 Method for decreasing impurity particles in low pressure furnace tube
CN107331728A (en) * 2017-06-20 2017-11-07 常州亿晶光电科技有限公司 The technique for improving PERC high-efficiency battery EL yields
CN113936995A (en) * 2021-12-17 2022-01-14 苏州长光华芯光电技术股份有限公司 Semiconductor epitaxial structure and preparation method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103643220A (en) * 2013-11-22 2014-03-19 上海华力微电子有限公司 Method for decreasing impurity particles in low pressure furnace tube
CN103643220B (en) * 2013-11-22 2016-06-08 上海华力微电子有限公司 A kind of reduce the method for impurity particle in low pressure boiler tube
CN107331728A (en) * 2017-06-20 2017-11-07 常州亿晶光电科技有限公司 The technique for improving PERC high-efficiency battery EL yields
CN107331728B (en) * 2017-06-20 2019-09-03 常州亿晶光电科技有限公司 The technique for improving PERC high-efficiency battery EL yield
CN113936995A (en) * 2021-12-17 2022-01-14 苏州长光华芯光电技术股份有限公司 Semiconductor epitaxial structure and preparation method thereof
CN113936995B (en) * 2021-12-17 2022-03-04 苏州长光华芯光电技术股份有限公司 Semiconductor epitaxial structure and preparation method thereof

Similar Documents

Publication Publication Date Title
CN103962353B (en) The cavity cleaning method of plasma etching apparatus
CN102549721B (en) The method and apparatus removing halogen
KR102510935B1 (en) Apparatus for reducing gaseous by-products and foreline cleaning
KR100478168B1 (en) Method and Device for Processing PFC
WO2011136982A2 (en) Methods for processing substrates in process systems having shared resources
JP2009530821A (en) Method and apparatus for improved operation of mitigation system
CN100385623C (en) CVD apparatus and method of cleaning the CVD apparatus
CN105719950B (en) Silicon etching and cleaning
CN104867815A (en) Cleaning method of etching reaction chamber
CN101392364A (en) Pre-cleaning method of reactive system
KR20090005295A (en) Method for treating effluents containing fluorocompounds like pfc and hfc
CN103681246A (en) SiC (Silicon Carbide) material cleaning method
WO2002081788A3 (en) Method for h2 recycling in semiconductor processing system
CN107919298B (en) Gas phase etching device and equipment
CN109155233B (en) Plasma abatement solids avoidance method using oxygen plasma cleaning cycle
CN103361734B (en) A kind of method improving output efficiency of polycrystalline silicon
CN101440498A (en) Method for precleaning thin film surface oxide before deposition
CN103996621A (en) Dry etching method
CN102610493A (en) Method for removing amorphous carbon films for cyclically utilizing silicon chips
CN101391258A (en) Precleaning method of reaction system
CN100393913C (en) Dry cleaning process in polycrystal silicon etching
US20090145741A1 (en) Method for catalytic treating perfluorocompound gas including particle removing unit
CN102420121B (en) Processing method of titanium nitride film subjected to fluorine group plasma etching
US6500766B2 (en) Post-cleaning method of a via etching process
TWI257121B (en) Method for cleaning reaction chamber

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Open date: 20090325