TWI257121B - Method for cleaning reaction chamber - Google Patents
Method for cleaning reaction chamberInfo
- Publication number
- TWI257121B TWI257121B TW94136531A TW94136531A TWI257121B TW I257121 B TWI257121 B TW I257121B TW 94136531 A TW94136531 A TW 94136531A TW 94136531 A TW94136531 A TW 94136531A TW I257121 B TWI257121 B TW I257121B
- Authority
- TW
- Taiwan
- Prior art keywords
- reaction chamber
- gas
- cleaning
- alleviates
- yield
- Prior art date
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to a method for cleaning a reaction chamber, and in particular to a cleaning method applicable to a reaction chamber of a chemical vapor deposition equipment. The cleaning method which alleviates the influence of the first wafer effect on the yield of the subsequent process comprises the following steps: (A) providing an equipment having a reaction chamber with the existence of NF3 inside; (B) introducing hydrogen ion plasma into the reaction chamber; and (C) introducing a carrier gas into the reaction chamber, wherein a hydrofluoric acid (HF) gas is formed by the reaction of the hydrogen ion plasma and the NF3 gas and the HF gas is carried away from the reaction chamber by the carrier gas. Thus, the method for cleaning a reaction chamber in accordance with the present invention can effectively reduce the residual concentration of fluorine ion in the reaction chamber, thus alleviates the negative influence caused by the first wafer effect and enhances the yield of the subsequent processes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94136531A TWI257121B (en) | 2005-10-19 | 2005-10-19 | Method for cleaning reaction chamber |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94136531A TWI257121B (en) | 2005-10-19 | 2005-10-19 | Method for cleaning reaction chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI257121B true TWI257121B (en) | 2006-06-21 |
TW200717578A TW200717578A (en) | 2007-05-01 |
Family
ID=37704211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94136531A TWI257121B (en) | 2005-10-19 | 2005-10-19 | Method for cleaning reaction chamber |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI257121B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106373868A (en) * | 2016-10-10 | 2017-02-01 | 昆山龙腾光电有限公司 | Fabrication method of array substrate |
CN112570393A (en) * | 2019-09-27 | 2021-03-30 | 长鑫存储技术有限公司 | Furnace tube cleaning method |
-
2005
- 2005-10-19 TW TW94136531A patent/TWI257121B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106373868A (en) * | 2016-10-10 | 2017-02-01 | 昆山龙腾光电有限公司 | Fabrication method of array substrate |
CN112570393A (en) * | 2019-09-27 | 2021-03-30 | 长鑫存储技术有限公司 | Furnace tube cleaning method |
Also Published As
Publication number | Publication date |
---|---|
TW200717578A (en) | 2007-05-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |