TWI257121B - Method for cleaning reaction chamber - Google Patents

Method for cleaning reaction chamber

Info

Publication number
TWI257121B
TWI257121B TW94136531A TW94136531A TWI257121B TW I257121 B TWI257121 B TW I257121B TW 94136531 A TW94136531 A TW 94136531A TW 94136531 A TW94136531 A TW 94136531A TW I257121 B TWI257121 B TW I257121B
Authority
TW
Taiwan
Prior art keywords
reaction chamber
gas
cleaning
alleviates
yield
Prior art date
Application number
TW94136531A
Other languages
Chinese (zh)
Other versions
TW200717578A (en
Inventor
Yue-Feng Lin
Tzy-Tzan Fu
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to TW94136531A priority Critical patent/TWI257121B/en
Application granted granted Critical
Publication of TWI257121B publication Critical patent/TWI257121B/en
Publication of TW200717578A publication Critical patent/TW200717578A/en

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  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a method for cleaning a reaction chamber, and in particular to a cleaning method applicable to a reaction chamber of a chemical vapor deposition equipment. The cleaning method which alleviates the influence of the first wafer effect on the yield of the subsequent process comprises the following steps: (A) providing an equipment having a reaction chamber with the existence of NF3 inside; (B) introducing hydrogen ion plasma into the reaction chamber; and (C) introducing a carrier gas into the reaction chamber, wherein a hydrofluoric acid (HF) gas is formed by the reaction of the hydrogen ion plasma and the NF3 gas and the HF gas is carried away from the reaction chamber by the carrier gas. Thus, the method for cleaning a reaction chamber in accordance with the present invention can effectively reduce the residual concentration of fluorine ion in the reaction chamber, thus alleviates the negative influence caused by the first wafer effect and enhances the yield of the subsequent processes.
TW94136531A 2005-10-19 2005-10-19 Method for cleaning reaction chamber TWI257121B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94136531A TWI257121B (en) 2005-10-19 2005-10-19 Method for cleaning reaction chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94136531A TWI257121B (en) 2005-10-19 2005-10-19 Method for cleaning reaction chamber

Publications (2)

Publication Number Publication Date
TWI257121B true TWI257121B (en) 2006-06-21
TW200717578A TW200717578A (en) 2007-05-01

Family

ID=37704211

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94136531A TWI257121B (en) 2005-10-19 2005-10-19 Method for cleaning reaction chamber

Country Status (1)

Country Link
TW (1) TWI257121B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106373868A (en) * 2016-10-10 2017-02-01 昆山龙腾光电有限公司 Fabrication method of array substrate
CN112570393A (en) * 2019-09-27 2021-03-30 长鑫存储技术有限公司 Furnace tube cleaning method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106373868A (en) * 2016-10-10 2017-02-01 昆山龙腾光电有限公司 Fabrication method of array substrate
CN112570393A (en) * 2019-09-27 2021-03-30 长鑫存储技术有限公司 Furnace tube cleaning method

Also Published As

Publication number Publication date
TW200717578A (en) 2007-05-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees