CN101440498A - Method for precleaning thin film surface oxide before deposition - Google Patents
Method for precleaning thin film surface oxide before deposition Download PDFInfo
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- CN101440498A CN101440498A CNA2007101706214A CN200710170621A CN101440498A CN 101440498 A CN101440498 A CN 101440498A CN A2007101706214 A CNA2007101706214 A CN A2007101706214A CN 200710170621 A CN200710170621 A CN 200710170621A CN 101440498 A CN101440498 A CN 101440498A
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Abstract
The invention provides a method for pre-cleaning oxide on the surface of a thin film before sedimentation. The pre-cleaning method adopts a dry-method chemical pre-cleaning process which mainly comprises the following steps: A, a remote plasma etching step: etching gas comprises nitrogen fluoride and ammonia gas; the nitrogen fluoride and ammonia gas are converted into fluoride through plasma with low power; and the fluoride reacts with the oxide on the surface of the thin film to generate silicate; and B, an in-situ annealing step: the silicate obtained in the step A is heated and sublimed to a gaseous state; and the gaseous silicate is pumped out. The disclosed method for pre-cleaning the oxide on the surface of the thin film before sedimentation adopts the dry-method chemical pre-cleaning process, can effectively clean the natural oxide of the bottom of a contact layer, can not degrade the performance of a device on the bottom layer and can simultaneously reduce the contact resistance.
Description
Technical field
The invention belongs to the chip manufacturing field, relate to deposit metal films technology, relate in particular to a kind of before deposition the method for precleaning thin film surface oxide.
Background technology
A silicon chip surface has a plurality of microchips, and each chip has millions of devices and interconnection line again, and they are all very responsive to staiing.Along with chip feature is of a size of the requirement that adapts to more high-performance and Geng Gao degree of integration and dwindles, it is more and more crucial that the needs that control surface stains become.
In the presedimentary technology of contact hole adhesive coating (contact glue layer), need do pre-clean processes to chip, the natural oxide on cleaning film surface and other impurity.
Existing pre-clean step adopts the bombardment of argon electricity slurry to realize usually, this physical bombardment be difficult to fully effectively remove the contact hole bottom natural oxide, and wet chemistry peel off etc. a series of before the formed residues of processing procedure, make contact resistance higher, and the bombardment of argon electricity slurry also can produce damage to contact layer bottom device, influences transistorized performance.
Summary of the invention
The purpose of this invention is to provide the method that can reduce contact resistance in a kind of contact hole adhesive coating deposition more effectively.
To achieve these goals, the invention provides a kind of before deposition the method for precleaning thin film surface oxide, described precleaning method adopts dry method chemistry pre-clean process, mainly may further comprise the steps:
A, long-range electricity slurry etch step; Etching gas comprises Nitrogen trifluoride, ammonia, and lower powered electricity slurry is transformed into fluorochemical with Nitrogen trifluoride, ammonia, the oxide compound reaction of described fluorochemical and described film surface, generation silicate;
B, in-situ annealing step; The described silicate of steps A is heated distillation and is gaseous state, and is taken out.
As a preferred embodiment of the present invention, the fluorochemical in the described steps A is ammonium fluoride or bifluoride ammonia or its mixture.
As a preferred embodiment of the present invention, described etching gas also comprises hydrogen.
As a preferred embodiment of the present invention, described etching gas also comprises one or more in argon gas, the helium.
As a preferred embodiment of the present invention, described precleaning method is carried out at the oxide compound on contact hole adhesive coating surface.
Another scheme of the present invention is: a kind of before deposition the method for precleaning thin film surface oxide, described precleaning method adopts dry method chemistry pre-clean process, mainly may further comprise the steps:
A, long-range electricity slurry etch step; Etching gas comprises hydrogen fluoride, ammonia, and lower powered electricity slurry is transformed into fluorochemical with hydrogen fluoride, ammonia, the oxide compound reaction of described fluorochemical and described film surface, generation silicate;
B, in-situ annealing step; The described silicate of steps A is heated distillation and is gaseous state, and is taken out.
As a preferred embodiment of the present invention, the fluorochemical in the described steps A is ammonium fluoride or bifluoride ammonia or its mixture.
As a preferred embodiment of the present invention, described etching gas also comprises hydrogen.
As a preferred embodiment of the present invention, described etching gas also comprises one or more in argon gas, the helium.
As a preferred embodiment of the present invention, described precleaning method is carried out at the oxide compound on contact hole adhesive coating surface.
Compared with prior art, the method for precleaning thin film surface oxide before deposition that the present invention discloses adopts dry method chemistry pre-clean process, can remove the natural oxide of contact layer bottom effectively; Can not make the performance degradation of bottom device again, reduce contact resistance simultaneously.
Description of drawings
Fig. 1 is the schema of the inventive method.
Embodiment
Below in conjunction with drawings and Examples the present invention is done concrete introduction.
Embodiment one
The present invention introduced a kind of before deposition the method for precleaning contact hole adhesive coating oxide on surface, described precleaning method adopts dry method chemistry pre-clean process, mainly may further comprise the steps:
Steps A: long-range electricity slurry etch step; Etching gas comprises Nitrogen trifluoride (NF
3), ammonia (NH
3), hydrogen (H
2), argon gas (Ar), helium (He), lower powered electricity slurry is transformed into fluorochemical with Nitrogen trifluoride, ammonia, fluorochemical and oxide compound reaction, generation silicate.In the present embodiment, above-mentioned fluorochemical is ammonium fluoride and bifluoride ammonia.Certain above-mentioned fluorochemical also might only be ammonium fluoride or only be bifluoride ammonia.
In this step, the hydrogen in the etching gas plays the effect of heat transfer in the present embodiment, and the heat-transfer effect when making in-situ annealing is better.Reactant gases is carried in acting as of argon gas and helium, makes the effect of present embodiment better.Certainly, the etching gas in this step can only comprise Nitrogen trifluoride (NF
3), ammonia (NH
3); Hydrogen (H
2), argon gas (Ar), helium (He) can replace with similar other gases of effect effect.
Step B: in-situ annealing step; The described silicate of steps A is heated distillation in position in the annealing process and is gaseous state, and is taken out.
The present invention handles contact hole adhesive coating oxide on surface by using the precleaning of dry method chemistry, can remove the natural oxide of contact layer bottom effectively; Can not make transistorized performance degradation again, reduce contact resistance simultaneously.
In addition, the invention is not restricted to be used in the technology of precleaning contact hole adhesive coating oxide on surface, so long as the method for clean metal film surface Si oxide is all in protection scope of the present invention.
Embodiment two
The difference of present embodiment and embodiment one is that in the present embodiment, in the long-range electricity slurry etch step of steps A: etching gas is hydrogen fluoride (HF), ammonia (NH
3), hydrogen (H
2), argon gas (Ar), helium (He), lower powered electricity slurry is transformed into fluorochemical with hydrogen fluoride, ammonia, this fluorochemical and oxide compound reaction, generation silicate.
Above embodiment is the unrestricted technical scheme of the present invention in order to explanation only.As, necessary etching gas not necessarily is limited to Nitrogen trifluoride (NF
3) or hydrogen fluoride (HF) and ammonia (NH
3), as long as under the bombardment of electricity slurry can with ammonia (NH
3) reaction generates fluorochemical and get final product.Any modification or partial replacement that does not break away from spirit and scope of the invention all should be encompassed in the middle of the claim scope of the present invention.
Claims (10)
1, a kind of before deposition the method for precleaning thin film surface oxide, it is characterized in that,
Described precleaning method adopts dry method chemistry pre-clean process, mainly may further comprise the steps:
A, long-range electricity slurry etch step; Etching gas comprises Nitrogen trifluoride, ammonia, and lower powered electricity slurry is transformed into fluorochemical with Nitrogen trifluoride, ammonia, the oxide compound reaction of described fluorochemical and described film surface, generation silicate;
B, in-situ annealing step; The described silicate of steps A is heated distillation and is gaseous state, and is taken out.
2, the method for claim 1 is characterized in that, the fluorochemical in the described steps A is ammonium fluoride or bifluoride ammonia or its mixture.
3, the method for claim 1 is characterized in that, described etching gas also comprises hydrogen.
4, as claim 1 or 2 or 3 described methods, it is characterized in that described etching gas also comprises one or both in argon gas, the helium.
As claim 1 or 2 or 3 described methods, it is characterized in that 5, described precleaning method is carried out at the oxide compound of the preceding crystal column surface of contact hole adhesive coating deposition.
6, a kind of before deposition the method for precleaning thin film surface oxide, it is characterized in that,
Described precleaning method adopts dry method chemistry pre-clean process, mainly may further comprise the steps:
A, long-range electricity slurry etch step; Etching gas comprises hydrogen fluoride, ammonia, and lower powered electricity slurry is transformed into fluorochemical with hydrogen fluoride, ammonia, the oxide compound reaction of described fluorochemical and described film surface, generation silicate;
B, in-situ annealing step; The described silicate of steps A is heated distillation and is gaseous state, and is taken out.
7, method as claimed in claim 6 is characterized in that, the fluorochemical in the described steps A is ammonium fluoride or bifluoride ammonia or its mixture.
8, method as claimed in claim 6 is characterized in that, described etching gas also comprises hydrogen.
9, as claim 6 or 7 or 8 described methods, it is characterized in that described etching gas also comprises one or both in argon gas, the helium.
As claim 6 or 7 or 8 described methods, it is characterized in that 10, described precleaning method is carried out at the oxide compound of the preceding crystal column surface of contact hole adhesive coating deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101706214A CN101440498A (en) | 2007-11-19 | 2007-11-19 | Method for precleaning thin film surface oxide before deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101706214A CN101440498A (en) | 2007-11-19 | 2007-11-19 | Method for precleaning thin film surface oxide before deposition |
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| CN101440498A true CN101440498A (en) | 2009-05-27 |
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ID=40725099
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|---|---|---|---|
| CNA2007101706214A Pending CN101440498A (en) | 2007-11-19 | 2007-11-19 | Method for precleaning thin film surface oxide before deposition |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102054687B (en) * | 2009-11-10 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | Removal method of surface oxide |
| CN105529253A (en) * | 2014-09-29 | 2016-04-27 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device formation method |
| CN106575609A (en) * | 2014-07-21 | 2017-04-19 | 应用材料公司 | Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates |
| CN106835178A (en) * | 2016-11-21 | 2017-06-13 | 力航 | New indirect type high-temperature fluorination hydrogen ion purge of gas reactant, technique and device |
| CN110911277A (en) * | 2018-09-17 | 2020-03-24 | 北京北方华创微电子装备有限公司 | Etching method |
-
2007
- 2007-11-19 CN CNA2007101706214A patent/CN101440498A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102054687B (en) * | 2009-11-10 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | Removal method of surface oxide |
| CN106575609A (en) * | 2014-07-21 | 2017-04-19 | 应用材料公司 | Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates |
| CN106575609B (en) * | 2014-07-21 | 2020-03-13 | 应用材料公司 | Tuning a remote plasma source to achieve improved performance with repeatable etch and deposition rates |
| US10916407B2 (en) | 2014-07-21 | 2021-02-09 | Applied Materials, Inc. | Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates |
| CN105529253A (en) * | 2014-09-29 | 2016-04-27 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device formation method |
| CN105529253B (en) * | 2014-09-29 | 2018-07-10 | 中芯国际集成电路制造(上海)有限公司 | The forming method of semiconductor devices |
| CN106835178A (en) * | 2016-11-21 | 2017-06-13 | 力航 | New indirect type high-temperature fluorination hydrogen ion purge of gas reactant, technique and device |
| CN106835178B (en) * | 2016-11-21 | 2019-05-07 | 力航 | Indirect type high-temperature fluorination hydrogen ion purge of gas reactant, technique and device |
| CN110911277A (en) * | 2018-09-17 | 2020-03-24 | 北京北方华创微电子装备有限公司 | Etching method |
| CN110911277B (en) * | 2018-09-17 | 2022-11-25 | 北京北方华创微电子装备有限公司 | Etching method |
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Open date: 20090527 |