CN101388520A - Solid laser device - Google Patents
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- CN101388520A CN101388520A CNA2007101218297A CN200710121829A CN101388520A CN 101388520 A CN101388520 A CN 101388520A CN A2007101218297 A CNA2007101218297 A CN A2007101218297A CN 200710121829 A CN200710121829 A CN 200710121829A CN 101388520 A CN101388520 A CN 101388520A
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Abstract
The invention provides a solid laser, which comprises a semi-conductor laser planer array which is used to output pump light and is formed by a plurality of semi-conductor lasers, an optical coupled device which is used to couple the pump light, a resonant chamber which can output laser in parallel which is input in parallel and a laser crystal which is arranged in the resonant chamber. The invention proposes an innovative idea of simultaneously applying a plurality clusters of parallel solid laser, which effectively achieves the output of semi-conductor pump solid laser in high efficiency and big power in some extent in the parallel output mode of a plurality clusters of solid laser. The solid laser can achieve high-efficiency output through utilizing the combination of multipath lower-power laser, compared with a single semi-conductor pump solid laser, the solid laser can excellently achieve thermal dispersion since the beam-splitting output of pump light under the premise of the same output power, can reduce heat load of crystal, effectively solve the problem of thermal effect of laser crystal, and improve electro-optical conversion efficiency and the flexibility of the resonant chamber design.
Description
Technical field
The present invention relates to laser technology field, particularly a kind of also solid state laser of line output.
Background technology
The development of semiconductor laser still can't utilize semiconductor laser directly to obtain the output of green glow at present; Though higher relatively on the red light semiconductor laser power level, wave band is comparatively single; The output of blue-light semiconductor laser use also be at present only rest on lower power levels (＜250mw).Although volume is little, integrated level is high, beam quality is relatively poor, can't obtain powerful output, yet needs further expansion simultaneously on the spectrum level of coverage, also has a certain distance apart from practical application.
The appearance of semiconductor pumped Solid State Laser technology has improved many deficiencies of light fixture pumping in the past, and is integrated, efficient, is the important research direction of current Solid State Laser technical development.Utilize semiconductor pumped Solid State Laser technology can realize ultraviolet, deep ultraviolet and visible light (especially red, blue, green light band) multispectral section laser output well, in such as a plurality of fields such as laser display, target acquisition, biologic medical, chemical research and military aerospace application, have extremely important research using value to region of ultra-red in conjunction with the optical frequency conversion technology.This technology maturity height, system's good beam quality, continuously-tuning, the wave band spreadability is strong, and is simple in structure, the integrated level height, the stability of a system is strong, has good scale practical value; Weak point is that the laser electro-optical efficiency is not high because of the restriction of correlative factors such as material, heating power, also can't simply, directly obtain the output of the Solid State Laser of efficient high power at present in multispectral segment limit.
The technology of existing laser array and line output, the laser technology (NECSEL) that a kind of extended cavity surface launching is arranged, as at application number be introduce in the patent application of WO2006105258, it is the laser array of a kind of vertical, extended cavity, surface emitting and the semiconductor laser technology that adopts non-linear frequency multiplication in the chamber, is a kind of technology at semiconductor laser array.And the solid state laser prior art mainly is the application that output or multi beam Solid State Laser bundle at a branch of Solid State Laser are coupled into beam of laser.
Summary of the invention
Therefore, task of the present invention is to overcome the deficiency that prior art exists, thereby proposes a kind of solid state laser of and line output.
Solid state laser of the present invention, can and be arranged at laser crystal in the described resonant cavity with the resonant cavity of the laser parallel output of the input that walks abreast at the optical coupling device that comprise the laser diode stack that is made of a plurality of semiconductor lasers that is used to export pump light, is used for described pump light is coupled.
In the technique scheme, between a plurality of semiconductor lasers in the described laser diode stack for series, parallel or series and parallel combines or independent separately.
In the technique scheme, described laser diode stack is a semiconductor laser module, between a plurality of semiconductor lasers in the described semiconductor laser module for series, parallel or series and parallel combines or independent separately.
In the technique scheme, use a plurality of semiconductor laser modules to export linear pump light, can series, parallel between described a plurality of semiconductor laser modules or series and parallel combines or independent separately.
In the technique scheme, described resonant cavity is made of input cavity mirror and output cavity mirror, perhaps realizes resonant cavity in the plated film mode, and described output cavity mirror is flat output mirror, body Bragg grating or spheric reflection minute surface battle array.
Further, described body Bragg grating is selected from acousto-optic body Bragg grating, electric light body Bragg grating, phosphor Bragg grating and photoetching body Bragg grating.
In the technique scheme, described linear pump light carries out pumping in the mode of end pumping to described laser crystal.
In the technique scheme, described optical coupling device is coupling minute surface battle array or GRIN Lens face battle array, coupling mirror on the described coupling minute surface battle array is corresponding one by one with the semiconductor laser on the described laser diode stack, and the GRIN Lens on the described GRIN Lens face battle array is corresponding one by one with the semiconductor laser on the described laser diode stack; Described coupling minute surface battle array can be made of a plurality of independently coupling mirrors, also a plurality of coupling mirrors can be made into an optical coupling device.
In the technique scheme, described laser crystal is the bulk crystals with ordinary construction or sandwich structure.
In the technique scheme, described laser crystal be Nd:YAG, Nd:YVO
4, Nd:YLF, Nd:GdVO
4, Yb:YAG, bulk ceramic material, Nd:YAG pottery or semi-conducting material.
In the technique scheme, also comprise optically nonlinear crystal, can be used for frequency multiplication and the frequency and the optical parametric oscillator of laser, mainly comprise crystal such as KTP, LBO, BBO, PPMgLN, PPLN, PPKTP.
In the technique scheme, also comprise the Q-switch that is used to realize pulse laser output.
Further, described Q-switch is active Q-switch or passive Q-adjusted switch.
The present invention proposes with the form multi beam Solid State Laser and line output, to have realized the output problem of the efficient high power of semiconductor pumped Solid State Laser technology at the parallel simultaneously applied novelty idea of Solid State Laser of multi beam to a certain extent effectively.
Take technique scheme, not only can utilize the combination of multichannel low power laser to realize high power output, and under the prerequisite of output equal-wattage, the present invention compares with single diode pumped solid state laser, because the beam splitting of pump light output can realize preferably that heating power disperses, and reduces the crystal heat load, solve laser crystal thermal effect problem effectively, improved electro-optical efficiency resonant cavity design flexibility; Use the high voltage-small current power supply if adopt series system low-voltage high-current power source can also be improved as, improved semiconductor laser effectively and combated a natural disaster change ability and reduced the power delivery loss; Needing under the situation of frequency conversion, because the use of beam splitting laser, can be forced to use the high frequency conversion material of damage threshold again, so increased the range of choice of material, can select the more excellent frequency conversion material of effect, thereby improved the efficient of nonlinear transformation, improved the reliability of optical element.
The present invention is effective way and the method that realizes the output of the Solid State Laser of high power, high efficiency, high reliability.Have very high practical value in the laser lighting application, can be applicable to aspects such as the detection of radar multiple spot, laser display, incoherent illumination, Biological Detection, chemical research, surperficial multiple spot analysis.
Description of drawings
Below, describe embodiments of the invention in conjunction with the accompanying drawings in detail, wherein:
Fig. 1 is the solid state laser of output fundamental frequency light;
Fig. 2 is the solid state laser of output frequency doubled light;
Fig. 3 is the solid state laser of output and frequency light;
Fig. 4 is the solid state laser of output difference frequency light;
The drawing explanation
1-semiconductor laser, 2-optical coupled mirror
3-laser crystal, 4-flat output mirror
5-semiconductor laser module, 6-GRIN Lens face battle array
8-frequency-doubling crystal, 9-body Bragg grating
10-the first semiconductor laser module, 11-the first GRIN Lens face battle array
12-the first plane input mirror, 13-the first laser crystal
14-light combination mirror 15-and the frequency crystal
17-the second semiconductor laser module, 18-the second GRIN Lens face battle array
19-the second plane input mirror, 20-the second laser crystal
24-Q-switch, 26-plane input mirror
27-optical parametric oscillator crystal 2,8-spheric reflection minute surface battle array
Embodiment
Below in conjunction with accompanying drawing the present invention is carried out detailed explanation and explanation.
Fig. 1 is a kind of solid state laser of exporting fundamental frequency light, the semiconductor laser 1 that to select 4 output wavelengths for use be 808nm is made 2 * 2 laser diode stacks, the independent separately output pump light of each semiconductor laser 1, be provided for described pump light is carried out the optical coupling device of coupling on its output light path, the embodiment of corresponding diagram 1, described optical coupling device use 2 * 2 independently coupling mirror be arranged in the face battle array, and the coupling mirror 2 in the coupling minute surface battle array is corresponding one by one with the laser in the described laser diode stack, sets gradually laser crystal 3 and flat output mirror 4 on the output light path of coupling minute surface battle array.Wherein, laser diode stack emitting laser wavelength is 808nm, the two sides of all coupling mirrors all is coated with 808nm anti-reflection film (transmitance is greater than 99.8%) in the coupling minute surface battle array, laser crystal 3 adopts the Nd:YAG bulk crystals of monoblock, plane of incidence plating 808nm anti-reflection film (transmitance is greater than 99.8%) and 1064nm high-reflecting film (reflectivity is greater than 99.8%), exit facet is coated with 808nm high-reflecting film (reflectivity is greater than 99.8%) and 1064nm anti-reflection film (transmitance is greater than 99.8%).Flat output mirror 4 planes of incidence plating 1064nm partly sees through film (transmitance 8%), exit facet plating 1064nm anti-reflection film (transmitance is greater than 99.8%), formed the resonant cavity of laser between the plane of incidence of the plane of incidence of laser crystal 3 and flat output mirror 4, it will be appreciated by those skilled in the art that, the chamber length of resonant cavity all is fine between the 80mm at 30mm among Fig. 1, laser crystal 3 also can use 2, or polylith laser crystal, wherein, each piece laser crystal is corresponding to the delegation/row in the described laser diode stack or multirow/row laser.
Above-mentioned laser crystal 3 can also adopt Nd:YVO
4, Nd:YLF, Nd:GdVO
4, Yb:YAG, bulk ceramic material, Nd:YAG pottery or semi-conducting material manufacturing it will be appreciated by those skilled in the art that laser crystal 3 both can adopt ordinary construction, also can adopt sandwich structure; Described flat output mirror 4 also can use spheric reflection minute surface battle array to substitute.
Inciding on the laser crystal 3 with the form of end pumping after through coupling minute surface battle array from the 808nm laser beam of laser diode stack emission, is the laser of 1064nm thereby produce wavelength, and through flat output mirror 4 outputs.
Embodiment shown in Figure 1 constitutes the face battle arrays with 4 semiconductor lasers, has realized this shows the effect of 4 times of gross powers with 4 road laser beam combining forms, in this way can solve the problem of high power laser output to a certain extent.
Further, all optical elements among Fig. 1 all can also be integrated on the laser system base plate, the Optical Maser System base plate is not only the support and the immobilizing foundation of laser system associated component, circuit is auxiliary to be supported but also need provide by the function that backplane circuit is designed to corresponding assembly, thereby can realize the integrated of laser system well, avoid the loaded down with trivial details disposal of circuit open-wire line; Greatly improve simultaneously the extensibility of systemic-function, can cooperate optical system that the functional configuration of Optical Maser System is set neatly, form the laser system that modularization is assembled according to actual requirement.Wherein, laser crystal can adopt indium foil welding or be adhered to one heat sink on, be fixed on the Optical Maser System base plate heat sink again, other optical elements such as laser diode stack, coupling minute surface battle array and flat output mirror be the base by separately or directly be fixed on the Optical Maser System base plate respectively all, attached heat sinks under the described Optical Maser System base plate utilizes methods such as liquid cools or gas cooled to dispel the heat; The electronic control system of laser can be arranged on the laser system base plate, also can be arranged on the top cover.
Fig. 2 has provided a kind of structure of exporting the solid state laser of double-frequency laser.Wherein, the semiconductor laser series connection that to select 4 output wavelengths for use be 808nm forms 2 * 2 battle arrays, and, this laser diode stack is integrated into a semiconductor laser module 5, and the parallel 808nm laser of 4 bundles of output is behind the coupled apparatus through the GRIN Lens face battle array made by 4 GRIN Lens, end pumping is on laser crystal 3, from the fundamental frequency light process frequency-doubling crystal 8 of laser crystal 3 outgoing, carry out the frequency multiplication of laser, at last via 9 outputs of body Bragg grating.Laser crystal 3 adopts the Nd:YAG crystal, its plane of incidence is coated with 808nm anti-reflection film (transmitance is greater than 99.8%) and 1064nm high-reflecting film (reflectivity is greater than 99.8%), exit facet is coated with 808nm high-reflecting film (reflectivity is greater than 99.8%) and 1064nm anti-reflection film (transmitance is greater than 99.8%), frequency-doubling crystal 8 adopts the PPLN crystal, and be coated with 1064nm anti-reflection film (transmitance is greater than 99.8%) and 532nm high-reflecting film (reflectivity is greater than 99.8%) at the plane of incidence of PPLN crystal, exit facet is coated with 1064nm anti-reflection film (transmitance is greater than 99.8%) and 532nm anti-reflection film (transmitance is greater than 99.5%), and 9 of body Bragg gratings are high anti-and wavelength 532nm is anti-reflection to wavelength 1064nm.Frequency-doubling crystal 8 in the present embodiment can also use KTP, LBO, BBO, BiBO, PPKTP, KTA, CBO, CLBO, PPMgOLN, KNO
3, LN, KN, optically nonlinear crystals such as LiI and semi-conducting material.Body Bragg grating 9 in the present embodiment can be selected acousto-optic body Bragg grating, electric light body Bragg grating, phosphor Bragg grating or photoetching body Bragg grating for use.
Because the method for this beam splitting has realized the heating power dispersion preferably, has reduced the crystal heat load, has solved laser crystal thermal effect problem effectively, has improved electro-optical efficiency resonant cavity design flexibility.Simultaneously, because 4 semiconductor lasers of semiconductor laser module inside adopt the mode of series connection, so can use the high voltage-small current power supply, thereby avoid using low-voltage high-current power source, improve semiconductor laser effectively and combated a natural disaster change ability and reduced the power delivery loss, improved the reliability of optical element.
Fig. 3 is the solid state laser of a kind of output and frequency light.Wherein, pumping source adopts two semiconductor laser modules that emission wavelength is 808nm, from first semiconductor laser module, 10 emitting lasers orders through the first GRIN Lens face battle array 11, incide on the light combination mirror 14 behind the first plane input mirror 12 and first laser crystal 13, from second semiconductor laser module, 17 emitting lasers orders through the second GRIN Lens face battle array 18, incide on the light combination mirror 14 behind the second plane input mirror 19 and second laser crystal 20, after two groups of laser close bundle through light combination mirror 14, enter again and frequently crystal 15 carry out and frequently, from 15 outputs of frequency crystal with frequency light through flat output mirror 4 outputs.
In the above-mentioned solid state laser, the described first and second plane input mirrors 12,19 adopt the level crossing of optical glass, and first laser crystal 13 adopts Nd ion doped vanadic acid yttrium (Nd:YVO
4), second laser crystal 20 adopts Nd ion doped yttroalumite gold-plating stone (Nd:YAG), and light combination mirror 14 adopts the level crossing of optical glass and frequency crystal 15 to adopt LBO, and outgoing mirror adopts the level crossing of optical glass.The two-sided plating 808nm anti-reflection film (transmitance is greater than 99.8%) of the first and second GRIN Lens face battle arrays 11,18, the two-sided plating 808nm anti-reflection film (transmitance is greater than 99.8%) of the first plane input mirror 12, exit facet is coated with wavelength 1342nm high-reflecting film (reflectivity is greater than 99.8%), the two-sided plating 808nm anti-reflection film (transmitance is greater than 99.8%) of the second plane input mirror 19, exit facet is coated with the high-reflecting film of wavelength 1064nm (reflectivity is greater than 99.8%).First laser crystal, 13 two-sided plating 1342nm anti-reflection films (transmitance is greater than 99.8%), and plane of incidence plating 808nm anti-reflection film (transmitance is greater than 99.8%), exit facet plating 808nm high-reflecting film (reflectivity is greater than 99.8%); Second laser crystal, 20 two-sided plating 1064nm anti-reflection films (transmitance is greater than 99.8%), and plane of incidence plating 808nm anti-reflection film (transmitance is greater than 99.8%), exit facet plating 808nm high-reflecting film (reflectivity is greater than 99.8%).The anti-reflection film (transmitance is greater than 99.8%) of the two-sided plating 1342nm of light combination mirror 14, and exit facet is coated with wavelength 1064nm angle high-reflecting film (reflectivity is greater than 99.8%).With the two-sided preparation of frequency crystal 15 to wavelength 1342nm and 1064nm anti-reflection film (transmitance is greater than 99.8%), plane of incidence plating 593nm high-reflecting film (reflectivity is greater than 99.8%), the anti-reflection film (transmitance is greater than 99.8%) of exit facet plating 593nm.The plane of incidence preparation of flat output mirror 4 is to wavelength 1342nm and 1064 high-reflecting films (reflectivity is greater than 99.8%), two-sided plating 593nm anti-reflection film (transmitance is greater than 99.8%).Above-mentioned can also use KTP, BBO, PPLN, PPMgOLN, PPKTP, crystal such as KTA with frequency crystal 15.
Fig. 4 is a kind of solid state laser of exporting difference frequency light.Comprise the semiconductor laser module as pumping source, pump light passes through optical coupling device, laser crystal 3, Q-switch 24, flat output mirror 4, plane input mirror 26, optical parametric oscillator crystal 27 and the 28 back outgoing of spheric reflection minute surface battle array successively.
Wherein, described spheric reflection minute surface battle array 28 is made of side by side two spherical reflector linear arrays, and the semiconductor laser that it is 808nm that described semiconductor laser module is selected 4 output wavelengths for use forms 2 * 2 battle arrays, and output 2 * 2 parallel lasers provide the pumping support.Described optical coupling device is selected 2 * 2 GRIN Lens face battle arrays 6 for use, its two-sided plating 808nm anti-reflection film (transmitance is greater than 99.8%).Laser crystal 3 adopts Nd:YAG, doping content is 0.3%, plane of incidence plating 808nm anti-reflection film (transmitance is greater than 99.8%) and 1064nm high-reflecting film (reflectivity is greater than 99.8%), exit facet plating 808nm high-reflecting film (reflectivity is greater than 99.8%) and 1064nm anti-reflection film (transmitance is greater than 99.8%).Acoustooptic Q-switching 24 pulses output 1064nm laser.Flat output mirror 4 planes of incidence plating 1064nm partly sees through film (transmitance is 8%), and exit facet plating 1064nm anti-reflection film (transmitance is greater than 99.8%) constitutes first resonant cavity between the plane of incidence of the plane of incidence of flat output mirror 4 and laser crystal 3, and chamber length is 76mm.Plane input mirror 26 two-sided plating 1064nm anti-reflection films (transmitance is greater than 99.8%), the exit facet plating is to the reflectance coating (reflectivity is greater than 99.8%) of wavelength 1550～1700nm, optical parametric oscillator crystal 27 adopts the PPMgLN crystal, and two-sided plating is to the anti-reflection film (transmitance is greater than 99.8%) of 1064nm and 1550～1700nm.The plane of incidence plating 1064nm high-reflecting film (reflectivity is greater than 99.8%) and the 1550～1700nm of spheric reflection minute surface battle array 28 partly see through film (transmitance is 5%), exit facet plating 1550～1700nm anti-reflection film (transmitance is greater than 99.8%), wherein, constitute second resonant cavity between the plane of incidence of spheric reflection minute surface battle array 28 and the exit facet of plane input mirror 26, the chamber is long to be 90mm.Above-mentioned optical parametric oscillator crystal can also use LBO, KTP, BBO, PPLN, PPKTP, crystal such as KTA.
Embodiment among Fig. 4 has used two spherical reflector linear arrays to constitute spheric reflection minute surface battle array 28 side by side, it will be appreciated by those skilled in the art that optical coupling device and outgoing mirror can use 2 or a plurality of linear array to constitute corresponding face battle array; Laser crystal in the light path and/or optically nonlinear crystal also can use 2 or polylith laser crystal and/or optically nonlinear crystal, every corresponding respectively row or several row of crystal, perhaps corresponding delegation or several capable laser beam.
From top a plurality of embodiment as can be seen, solid state laser of the present invention can be exported infrared light, also can export visible light.The top laser face battle array of mentioning is mainly at the laser linear array, as long as line number and columns all are not equal to 1 laser array and all are included in the laser face battle array of the present invention, described laser face battle array can by 2 * 3,3 * 3 or more solid state laser constitute, the arrangement mode of described solid state laser is not limited only to rectangular array, also can arrange according to various symmetries or asymmetrical form, this should be understandable to those skilled in the art.
It should be noted that embodiment structure and the technical scheme only in above each accompanying drawing at last in order to solid state laser of the present invention to be described, but unrestricted.Although the present invention is had been described in detail with reference to embodiment, those of ordinary skill in the art is to be understood that, technical scheme of the present invention is made amendment or is equal to replacement, do not break away from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (19)
1. solid state laser, can and be arranged at laser crystal in the described resonant cavity with the resonant cavity of the laser parallel output of the input that walks abreast at the optical coupling device that comprise the laser diode stack that is made of a plurality of semiconductor lasers that is used to export pump light, is used for described pump light is coupled.
2. solid state laser according to claim 1 is characterized in that, between a plurality of semiconductor lasers in the described laser diode stack for series, parallel or series and parallel combines or independent separately.
3. solid state laser according to claim 1, it is characterized in that, described laser diode stack is a semiconductor laser module, between a plurality of semiconductor lasers in the described semiconductor laser module for series, parallel or series and parallel combines or independent separately.
4. solid state laser according to claim 3 is characterized in that, comprises a plurality of semiconductor laser modules, between described a plurality of semiconductor laser modules for series, parallel or series and parallel combines or independent separately.
5. solid state laser according to claim 1 is characterized in that, described resonant cavity is made of input cavity mirror and output cavity mirror, perhaps realizes resonant cavity in the plated film mode.
6. solid state laser according to claim 3 is characterized in that, described output cavity mirror is flat output mirror, body Bragg grating or spheric reflection minute surface battle array.
7. solid state laser according to claim 6 is characterized in that, described body Bragg grating is acousto-optic body Bragg grating, electric light body Bragg grating, phosphor Bragg grating and photoetching body Bragg grating.
8. solid state laser according to claim 1 is characterized in that, described linear pump light carries out pumping in the mode of end pumping to described laser crystal.
9. solid state laser according to claim 1 is characterized in that, described optical coupling device is coupling minute surface battle array or GRIN Lens face battle array.
10. solid state laser according to claim 1 is characterized in that, described laser crystal is the bulk crystals with ordinary construction or sandwich structure.
11. solid state laser according to claim 1 is characterized in that, also comprises optically nonlinear crystal.
12. solid state laser according to claim 1 is characterized in that, also comprises the Q-switch that is used to realize pulse laser output.
13. solid state laser according to claim 12 is characterized in that, described Q-switch is active Q-switch or passive Q-adjusted switch.
14. solid state laser according to claim 1 is characterized in that, also comprise laser system base plate, top cover and be fixed in heat sink on the described laser system base plate, described laser crystal and described nonlinear crystal be fixed in described heat sink on.
15. solid state laser according to claim 14 is characterized in that, described laser crystal and described nonlinear crystal by indium foil welding or be adhesively fixed in described heat sink on.
16. solid state laser according to claim 14 is characterized in that, all optical elements of described laser all are integrated on the described laser system base plate.
17. solid state laser according to claim 14 is characterized in that, described laser system base plate bottom is provided with radiator.
18. solid state laser according to claim 17 is characterized in that, described radiator is to adopt the radiator of liquid cools or adopt gas-cooled radiator.
19. solid state laser according to claim 14 is characterized in that, also comprises the electronic control system that is arranged on laser system base plate or the top cover.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101218297A CN101388520A (en) | 2007-09-14 | 2007-09-14 | Solid laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101218297A CN101388520A (en) | 2007-09-14 | 2007-09-14 | Solid laser device |
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| Publication Number | Publication Date |
|---|---|
| CN101388520A true CN101388520A (en) | 2009-03-18 |
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ID=40477770
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|---|---|---|---|
| CNA2007101218297A Pending CN101388520A (en) | 2007-09-14 | 2007-09-14 | Solid laser device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820605A (en) * | 2012-09-06 | 2012-12-12 | 南京长青激光科技有限责任公司 | High power mini laser package |
| CN103479428A (en) * | 2013-08-26 | 2014-01-01 | 北京龙慧珩医疗科技发展有限公司 | Laser lipolysis system |
| CN103494641A (en) * | 2013-08-26 | 2014-01-08 | 北京龙慧珩医疗科技发展有限公司 | Multifunctional laser treatment combined system and method |
| CN104767109A (en) * | 2015-04-20 | 2015-07-08 | 广州市普东光电科技有限公司 | Laser device with four paratactic bars sharing one cavity and working method thereof |
| CN108899753A (en) * | 2018-08-21 | 2018-11-27 | 深圳市格镭激光科技有限公司 | A kind of end face uniform pumping solid state laser |
-
2007
- 2007-09-14 CN CNA2007101218297A patent/CN101388520A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820605A (en) * | 2012-09-06 | 2012-12-12 | 南京长青激光科技有限责任公司 | High power mini laser package |
| CN103479428A (en) * | 2013-08-26 | 2014-01-01 | 北京龙慧珩医疗科技发展有限公司 | Laser lipolysis system |
| CN103494641A (en) * | 2013-08-26 | 2014-01-08 | 北京龙慧珩医疗科技发展有限公司 | Multifunctional laser treatment combined system and method |
| CN103479428B (en) * | 2013-08-26 | 2016-01-20 | 北京龙慧珩医疗科技发展有限公司 | A kind of laser lipolysis system |
| CN104767109A (en) * | 2015-04-20 | 2015-07-08 | 广州市普东光电科技有限公司 | Laser device with four paratactic bars sharing one cavity and working method thereof |
| CN108899753A (en) * | 2018-08-21 | 2018-11-27 | 深圳市格镭激光科技有限公司 | A kind of end face uniform pumping solid state laser |
| CN108899753B (en) * | 2018-08-21 | 2024-04-02 | 深圳市格镭激光科技有限公司 | End-face uniform pumping solid laser |
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