CN101388352A - MOSFET and linking method thereof - Google Patents

MOSFET and linking method thereof Download PDF

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Publication number
CN101388352A
CN101388352A CN 200810217046 CN200810217046A CN101388352A CN 101388352 A CN101388352 A CN 101388352A CN 200810217046 CN200810217046 CN 200810217046 CN 200810217046 A CN200810217046 A CN 200810217046A CN 101388352 A CN101388352 A CN 101388352A
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chip
effect transistor
field effect
mos field
bonding method
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CN101388352B (en
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赖辉朋
谭楠
廖志强
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SHENZHEN JINGDAO ELECTRONIC CO Ltd
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SHENZHEN JINGDAO ELECTRONIC CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
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Abstract

A bonding method of a metallic oxide semiconductor field-effect transistor comprises the following steps: conducting the pre-heating treatment for the metallic oxide semiconductor field-effect transistor, melting one end of a copper wire close to a chip into a solder ball through the way of electric ignition, contacting the solder ball with the welding points of the chip and welding the solder ball on the chip through applying ultrasonic sound and pressure, and welding the other end of the copper wire on the frame of the metallic oxide semiconductor field-effect transistor through using the ultrasonic sound and pressure. The metallic oxide semiconductor field-effect transistor and the bonding method both adopt the copper wire welding, which can reduce cost through replacing a gold wire with the copper wire as the conductive performance of the copper wire is superior to gold and aluminum, and can greatly increase the efficiency of the bonding copper wire compared with automatic devices with bonding thicker aluminum wires. The bonding method breaks through the restrict region that a tradition copper wire ball welding is not used on the technology of MOSFET. In addition, the invention further provides a metallic oxide semiconductor field-effect transistor.

Description

Mos field effect transistor and bonding method thereof
[technical field]
The present invention relates to the electronic component technology field, relate in particular to a kind of mos field effect transistor and bonding method thereof.
[background technology]
Field effect transistor (Field Effect Transistor) is a kind of semiconductor device that utilizes field effect to come the Control current size.The field effect transistor volume is little, in light weight, power consumptive province, life-span are long, and have that input impedance height, noise are low, Heat stability is good, advantage such as capability of resistance to radiation is strong and manufacturing process is simple, thereby applied range.
In the processing and manufacturing process of field effect transistor, bonding is one important technique process, and it is the solder joint on the chip (PAD) to be carried out conducting with lead frame (LEADFRAME) be connected.Traditionally, adopt the gold thread ball bonding to connect usually or two kinds of methods of normal temperature ultra-sonic welded are carried out bonding.Wherein because aluminum steel is not easy to form ball under the high-tension current sparking, so can only take the normal temperature ultra-sonic welded; And gold thread because himself have conducts electricity very well, hardness is little, acidproof, corrosion-resistant, be difficult for oxidation, the easy physical characteristic of balling-up, be widely used in ball bonding and connect.
The applied current of mos field effect transistor (MOSFET) is bigger, if adopt gold thread ball bonding method, thus need with thicker gold thread bonding, because gold is relatively more expensive, so just produce a problem, the cost of producing this MOSFET with the method is very high.If use the aluminum steel ultrasonic bonding, because the electric conductivity of aluminum steel can not show a candle to gold, so the method needs thicker aluminum steel than gold thread, nowadays, this way is adopted in the processing of most of MOSFET.But because the automatic equipment efficient of bonding crude aluminum line is very low, and cost an arm and a leg, for a lot of small enterprises, can't realize automatic production at all, so part enterprise all adopts bonding manually, though and with the product of artificial bonding do not need expensive equipment equally low the and reliability of efficient do not have the height of automated bonding.
[summary of the invention]
In view of this, be necessary the high or inefficient problem of the cost that produces at traditional bonding method, a kind of bonding method of mos field effect transistor is provided.
In addition, also provide a kind of mos field effect transistor that uses said method to make.
For solving the problems of the technologies described above, following technical scheme has been proposed:
A kind of mos field effect transistor bonding method comprises the steps: mos field effect transistor is carried out The pre-heat treatment; The mode that makes electricity consumption sparking is fused into soldered ball with copper cash near an end of chip; The soldered ball and the solder joint of chip are contacted and apply ultrasonic and pressure to be welded on soldered ball on the described chip; Use ultrasonic and pressure that the other end of copper cash is welded on the framework of mos field effect transistor.
Wherein, also be included in described soldered ball around the step of logical protective gas, the line tail of described copper cash is positioned at the position on the upper side, center of the valve of logical protective gas.
Wherein, described protective gas for hydrogen nitrogen than being the hydrogen-nitrogen mixture gas of 0.05-0.2, flow is 0.2-1.0L/min.
Wherein, the sparking electric current of described electricity sparking is 120-180mA, is 4500-7000V every empty voltage, and the sparking time is 1500-2500 μ S.
Wherein, described soldered ball is welded on the step that comprises the solder joint on the search chip in the step on the described chip, the numerical value of ultrasonic power P is 10-30 described in the process of the solder joint on the search chip, and wherein, the account form of ultrasonic power is (P/255) 2* 3.2 watts.
Wherein, described soldered ball is welded on the contact phase that comprises soldered ball and chip in the step on the described chip, the numerical value of ultrasonic power P is 15-80 in contact phase, pressure is 60-180g, duration is 2-15ms, and wherein, the account form of ultrasonic power is (P/255) 2* 3.2 watts.
Wherein, described soldered ball is welded on the welding stage that comprises soldered ball and chip in the step on the described chip, the numerical value of ultrasonic power P is 40-100 in the welding stage, pressure is 80-180g, duration is 15-45ms, and wherein, the account form of ultrasonic power is (P/255) 2* 3.2 watts.
Wherein, the described other end with copper cash is welded on the contact phase that comprises copper cash and framework in the step on the framework, and the numerical value of ultrasonic power P is 0-85 in contact phase, pressure is 200-280g, duration is 3-15ms, and wherein, the account form of ultrasonic power is (P/255) 2* 3.2 watts.
Wherein, the described other end with copper cash is welded on the welding stage that comprises copper cash and framework in the step on the framework, and the numerical value of ultrasonic power P is 90-180 in the welding stage, pressure is 180-360g, duration is 20-40ms, and wherein, the account form of ultrasonic power is (P/255) 2* 3.2 watts.
A kind of mos field effect transistor, comprise chip, framework and be welded between described chip and the framework that described copper cash adopts above-mentioned any one mos field effect transistor bonding method to be welded between described chip and the framework to be electrically connected the copper cash of described chip and framework.
Adopted the copper wire welding in above-mentioned mos field effect transistor and the bonding method thereof, because the electric conductivity of copper wire is good in gold and aluminium, substituting spun gold with copper wire can reduce cost, and the automatic equipment of the aluminium wire thicker with respect to bonding, the efficient of bonding brass wire can significantly improve.
[description of drawings]
Fig. 1 is the schematic diagram of copper wire bonding equipment;
Fig. 2 is soldering tip, workbench, the power of copper wire bonding process, the control curve synoptic diagram of pressure.
[embodiment]
Be described in detail below in conjunction with specific embodiment, in the following embodiments, adopt copper cash to replace traditional gold thread or aluminum steel, reach and reduce cost and the purpose of difficulty of processing.
It is exactly that its electric conductivity is good in gold height far away especially and aluminium that copper has a significant advantage, therefore, can reduce the consumption of copper cash, to reduce the cost that raw material use.By calculating, MOSFET of bonding need be respectively 1 of a grid (G) with 6 of the copper cash of 3mil, 5 of source electrodes (S).Because the price of copper is gold cheap a lot of relatively, therefore, can significantly reduce the cost of raw material.
But copper has hardness big with respect to gold utensil, and easily the characteristics of oxidation can be brought certain difficulty to bonding in the process of processing and manufacturing, below in conjunction with the MOSFET bonding method be described in detail.
As shown in Figure 1, MOSFET comprises chip 110 and framework 120.Bonding apparatus comprises sparking bar 210, soldering tip 220 and valve 230.Bonding apparatus is bonded in copper cash 310 on chip 110 and the framework 120, and realization chip 110 is electrically connected with framework 120.
Sparking bar 210 is used to produce the line tail 312 that high pressure and big electric current make copper cash 310, and promptly copper cash produces high temperature melting near an end of chip 110 and becomes soldered ball.In the present embodiment, MOSFET is carried out The pre-heat treatment, is about 200 degrees centigrade in ambient temperature, and the sparking parameter of sparking bar 210 is sparking electric current (EFO Current) 120-180mA, every empty voltage (Gap Voltage) 4500-7000V, sparking time (EFO Time) 1500-2500 μ S.
Soldering tip 220 comprises chopper 222 and transducing bar 224.Transducing bar 224 is used in the process of welding electric energy being converted into ultrasonic, and in the present embodiment, ultrasonic frequency is 138KHz.Pressure and mobile copper cash that chopper 222 is used for clamping copper cash 310, copper cash 310 is produced to chip 110.Copper cash 310 under the sparking bar 210 output high pressure broadsword v.broadswords 222 forms a specific soldered ball by effect regular hour and electric current.Chopper 222 drops on the solder joint (PAD) of chip 110 then, and equipment output energy is converted into ultrasonic by transducing bar 224, and soldering tip 220 pressure is down used the regular hour in this ultrasonic cooperation, soldered ball is adhered to the pad on chip 110 surfaces.
Because copper has easy oxidation, easier accelerated oxidation under the state of high temperature melting particularly, therefore the side at chopper 222 is provided with valve 230, logical protective gas around soldered ball.During installation, make copper cash tail 312 be positioned at the position on the upper side, center of the gas outlet of valve 230, could form good soft copper ball like this.In the present embodiment, bore is 3mm in the valve 230, and the logical hydrogen nitrogen of going up is than being the hydrogen-nitrogen mixture gas of 0.05-0.2 in the valve, and flow is 0.2-1.0L/min, and optimum flow is 0.6L/min, and is not oxidized with the copper ball that protection forms.Hydrogen in the hydrogen-nitrogen mixture gas plays reduction, and nitrogen is the effect of emptying oxygen.Protective gas also can adopt highly purified nitrogen or inert gas.Certainly, if produce in vacuum environment or no oxygen environment, gas can not need protection.
A copper cash has two solder joints, and wherein, one is welded on the chip 110, and two are welded on the framework 120, has only a weldering and two to weld and all meets the requirements, and could realize being electrically connected of chip 110 and framework 120.Product quality behind the bonding is qualified must to guarantee that two weld solid no rosin joint in order to make, and the more important thing is that a weldering should firmly not have rosin joint, will guarantee the chip not damaged simultaneously.Because it is one is welded on the chip 110 and carries out,, impaired easily and reduce the yield of product if chip 110 is subjected to excessive pressure and ultrasonic power.Therefore, need to strike sparks in the process of weldering bar 210 produces soldered balls.And two be welded in and carry out on the framework 120, and framework 120 is generally metal material, can bear bigger pressure and ultrasonic power, and therefore, the bar 210 of generally need not striking sparks produces soldered balls.Certainly, in the process of two welderings, also can produce soldered ball.
Welding a copper cash is a time, pressure, and the power acting in conjunction, and by the workbench that drives MOSFET and drive the process of soldering tip 220 interoperations of copper cash 310.
As shown in Figure 2, curve 22 expression soldering tips 220 vertical direction (the Z direction, promptly away from/near the direction of MOSFET) motion.Curve 22 shows down (near the direction of MOSFET) motion of soldering tip 220 below horizontal line, the horizontal line top is (away from the direction of MOSFET) action then up.Below horizontal line, curve 22 also quickens down toward the next soldering tip 220 that is expressed as; Below horizontal line, curve up then shows down retarded motion of soldering tip 220.In like manner, above horizontal line, curve also up then is an accelerator up; The horizontal line top, curve up slows down toward the next soldering tip 220 that shows.Curve 22 represents then that on horizontal line soldering tip 220 is static in the Z direction.
Curve 24 expression workbench are at the motion process of horizontal plane direction (X, Y direction).The motion of workbench is mainly used in switches different solder joints to finish a weldering and two welderings; The motion of soldering tip 220 is mainly used in copper cash 310 is contacted with chip 110 or framework 120 respectively.The action of X, Y, three directions of Z cooperatively interacts, and makes it finish the mechanical movement of welding.Cooperate to go up ultrasonic power that transducing bar 224 produces and the pressure of chopper 222 generations again and finish the welding of a line, curve 26 and curve 28 and represent the situation of change of power and pressure respectively among Fig. 2. Curve 22,24,26,28 is divided into 14 intervals, as shown in the table:
Interval sequence number Action Power (P) Pressure Time
1 Soldering tip drops to the search height of first solder joint
2 The search of first solder joint 10-30
3 The first solder joint contact phase 15-80 60-180 2-15
4 First solder joint welding stage 40-100 80-180 15-45
5 Return altitude
6 Layback
7 Estimate line length
8 Search delay
9 Soldering tip drops to the search height of second solder joint
10 The search of second solder joint 10-30
11 The second solder joint contact phase 0-85 200-280 3-15
12 Second solder joint welding stage 90-180 180-360 20-40
13 Buttock line length
14 Get back to initial position
The numerical value of power P is in order to represent and be provided with conveniently that its actual performance number is: (P/255) in the last table 2* 3.2 watts.Certainly be complementary relation between power, pressure, the time parameter, P is an adjustable value, scope from 0 to 255.In order to represent and be provided with conveniently that the unit of pressure is gram (g) in the table, the unit of time is a millisecond (ms).
Before interval 1, workbench can arrive the precalculated position by mobile MOSFET.
Interval 1 for behind the MOSFET arrival precalculated position, and soldering tip 220 drops to the search height of first solder joint.In this interval, soldering tip 220 moves to the search height of first solder joint with fast speeds, and this search height is nearer from the solder joint of chip 110.
Interval 2 is the search of first solder joint.In this interval, soldering tip 220 moves with slower speed, touches the solder joint of chip 110 up to the copper ball of fusing.1 and interval 2 purpose between the mobile zone of soldering tip 220 is, prevent from too fast moving process, to run into chip 110 and damage chip 110, and the search in interval 1 highly is can not touch chip 110.In interval 2, ultrasonic power is 10-30.
Interval 3 is the first solder joint contact phase.In this interval, soldering tip 220 stops to move, and soldered ball contacts with solder joint, and ultrasonic power is 15-80, and the soldering tip applied pressure is 60-180g, and interval 3 duration is 2-15ms.
Interval 4 is first solder joint welding stage.In this interval, improve power and pressure, and time expand, so that copper cash 310 is welded on the chip.In the present embodiment, ultrasonic power is 40-100, and the soldering tip applied pressure is 80-180g, and interval 4 duration is 15-45ms.
Interval 5, soldering tip 220 rises to return altitude from having welded a solder joint, and return altitude can be provided with as required.
Interval 6, soldering tip 220 is static, by movable workbench, makes soldering tip 220 move a layback relative to MOSFET, and layback can be provided with as required.
Interval 7, soldering tip 220 continues to rise along the Z direction, and climb is the length of the whole piece bonding wire that needs.The length of this bonding wire is enough to connect the solder joint of chip 110 and the framework 120 of MOSFET.
Interval 8, soldering tip 220 is static, by movable workbench, soldering tip 220 is moved relative to MOSFET.
In interval 9 to interval 12, soldering tip 220 move with interval 1 to interval 4 mobile similar, just speed with apart from different.To interval 10, workbench continues to move makes soldering tip 220 arrive the position that frameworks 120 need weld in interval 9.Each interval power, pressure and time are as shown in Table.Contrast second solder joint and first solder joint can be found, the power of second solder joint, pressure and time are all greater than power, pressure and time of first solder joint.The processes of two welderings can not need to form soldered ball, therefore in the table about the contacts of two welderings, be welded as copper cash and directly contact, weld with framework 120.
In interval 13, soldering tip 220 rises, and reserves buttock line length.
In interval 14, soldering tip 220 rises, and movable workbench is got back to initial position.
The time that interval 1 to interval 14 times that spent are exactly a line of welding.
After welding was finished, copper cash became the part of MOSFET, promptly Trench MOSFE comprise chip 110, framework 120 and be welded on chip 110 and framework 120 between to be electrically connected the copper cash 310 of chip 110 and framework 120.
Above-mentioned power and pressure parameter are to obtain by repetitious experiment and theory analysis, test shows, and the MOSFET working stability that adopts the above-mentioned parameter welding to obtain is reliable.Adopted the copper wire welding in above-mentioned mos field effect transistor and the bonding method thereof, because the electric conductivity of copper wire is good in gold and aluminium, substituting spun gold with copper wire can reduce cost, and the automatic equipment of the aluminium wire thicker with respect to bonding, the efficient of bonding brass wire can significantly improve.Traditional yield efficiency when using aluminium wire is 4-5 ten thousand/24 hours, and the efficient of present embodiment when using copper wire is 6-7 ten thousand/24 hours.Copper wire bonding equipment is traditional below 25% of the amortization charge in 1 year of aluminum steel automated bonding equipment, thereby reduces the cost of entire product.Consider intermetallic growth in addition, be not easy to produce the intermetallic growth behind copper and the aluminium alloy pad bonding, the product of producing uses or places a period of time (normally more than 1 year), pad and chip are not easy to produce intermetallic compound, so inefficacy is being placed and also be not easy after use a period of time to product.So product reliability height of copper wire bonding production.Above-mentioned bonding method has been broken through the technology forbidden zone that traditional copper wire ball bonding can not be used for MOSFET.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.

Claims (10)

1, a kind of mos field effect transistor bonding method is characterized in that, comprises the steps:
Mos field effect transistor is carried out The pre-heat treatment;
The mode that makes electricity consumption sparking is fused into soldered ball with copper cash near an end of chip;
The soldered ball and the solder joint of chip are contacted and apply ultrasonic and pressure to be welded on soldered ball on the described chip;
Use ultrasonic and pressure that the other end of copper cash is welded on the framework of mos field effect transistor.
2, mos field effect transistor bonding method according to claim 1 is characterized in that, also be included in described soldered ball around the step of logical protective gas, the line tail of described copper cash is positioned at the position on the upper side, center of the valve of logical protective gas.
3, mos field effect transistor bonding method according to claim 2 is characterized in that, described protective gas for hydrogen nitrogen than being the hydrogen-nitrogen mixture gas of 0.05-0.2, flow is 0.2-1.0L/min.
4, mos field effect transistor bonding method according to claim 1 is characterized in that, the sparking electric current of described electricity sparking is 120-180mA, is 4500-7000V every empty voltage, and the sparking time is 1500-2500 μ S.
5, mos field effect transistor bonding method according to claim 1, it is characterized in that, the described step that comprises the solder joint on the search chip in the step on the described chip that soldered ball is welded on, the numerical value of ultrasonic power P is 10-30 described in the process of the solder joint on the search chip, wherein, the account form of ultrasonic power is (P/255) 2* 3.2 watts.
6, mos field effect transistor bonding method according to claim 1, it is characterized in that, the described contact phase that comprises soldered ball and chip in the step on the described chip that soldered ball is welded on, the numerical value of ultrasonic power P is 15-80 in contact phase, pressure is 60-180g, duration is 2-15ms, and wherein, the account form of ultrasonic power is (P/255) 2* 3.2 watts.
7, mos field effect transistor bonding method according to claim 1, it is characterized in that, described soldered ball is welded on the welding stage that comprises soldered ball and chip in the step on the described chip, the numerical value of ultrasonic power P is 40-100 in the welding stage, pressure is 80-180g, duration is 15-45ms, and wherein, the account form of ultrasonic power is (P/255) 2* 3.2 watts.
8, mos field effect transistor bonding method according to claim 1, it is characterized in that, the described other end with copper cash is welded on the contact phase that comprises copper cash and framework in the step on the framework, the numerical value of ultrasonic power P is 0-85 in contact phase, pressure is 200-280g, duration is 3-15ms, and wherein, the account form of ultrasonic power is (P/255) 2* 3.2 watts.
9, mos field effect transistor bonding method according to claim 1, it is characterized in that, the described other end with copper cash is welded on the welding stage that comprises copper cash and framework in the step on the framework, the numerical value of ultrasonic power P is 90-180 in the welding stage, pressure is 180-360g, duration is 20-40ms, and wherein, the account form of ultrasonic power is (P/255) 2* 3.2 watts.
10, a kind of mos field effect transistor, comprise chip and framework, it is characterized in that, comprise also being welded between described chip and the framework being electrically connected the copper cash of described chip and framework that described copper cash adopts that any described mos field effect transistor bonding method is welded between described chip and the framework in the claim 1 to 9.
CN 200810217046 2008-10-22 2008-10-22 MOSFET and linking method thereof Active CN101388352B (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103199059A (en) * 2013-04-23 2013-07-10 山东泰吉星电子科技有限公司 Copper wire bonding method in pure nitrogen environment
CN103236421A (en) * 2013-04-23 2013-08-07 山东泰吉星电子科技有限公司 Copper wire bonding structure between chip pad points and bonding method thereof
CN103909185A (en) * 2014-03-28 2014-07-09 木林森股份有限公司 Copper wire welding equipment and process
CN113063162A (en) * 2021-04-08 2021-07-02 安徽汉先智能科技有限公司 Electronic ignition control system for ball welding type bonding machine
CN117438326A (en) * 2023-10-30 2024-01-23 广东工业大学 Welding head cooperative bonding method of wire bonding machine and wire bonding machine

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103199059A (en) * 2013-04-23 2013-07-10 山东泰吉星电子科技有限公司 Copper wire bonding method in pure nitrogen environment
CN103236421A (en) * 2013-04-23 2013-08-07 山东泰吉星电子科技有限公司 Copper wire bonding structure between chip pad points and bonding method thereof
CN103909185A (en) * 2014-03-28 2014-07-09 木林森股份有限公司 Copper wire welding equipment and process
CN103909185B (en) * 2014-03-28 2015-06-10 木林森股份有限公司 Copper wire welding equipment and process
CN113063162A (en) * 2021-04-08 2021-07-02 安徽汉先智能科技有限公司 Electronic ignition control system for ball welding type bonding machine
CN117438326A (en) * 2023-10-30 2024-01-23 广东工业大学 Welding head cooperative bonding method of wire bonding machine and wire bonding machine

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