CN101373627A - Sensitive amplifier circuit of semiconductor memory and operating method and application thereof - Google Patents
Sensitive amplifier circuit of semiconductor memory and operating method and application thereof Download PDFInfo
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- CN101373627A CN101373627A CNA2007100588761A CN200710058876A CN101373627A CN 101373627 A CN101373627 A CN 101373627A CN A2007100588761 A CNA2007100588761 A CN A2007100588761A CN 200710058876 A CN200710058876 A CN 200710058876A CN 101373627 A CN101373627 A CN 101373627A
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- amplifier circuit
- sensitive amplifier
- semiconductor memory
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Abstract
The invention relates to a sensitive amplifier circuit of a semiconductor memory, a working method and the application thereof. The amplifier circuit comprises a Schmidt buffer, an inverter (1), an inverter (2), a storage cell, and a current detector which is used for detecting the ampere of a current flows through the storage unit, converting the ampere into a voltage signal and outputting the voltage signal. The storage unit, the current detector, the Schmidt buffer, the inverter (1) and the inverter (2) are connected in sequence. The current detector detects the ampere of the current flowing through the storage unit, converts the ampere into a voltage signal and outputs the voltage signal. The Schmidt buffer reshapes the output voltage signal. The inverter (1) inverts the output signal of the Schmidt buffer. The inverter (2) inverts the inverter (1) and provides the carrying load ability for the output of the sensitive amplifier circuit. The sensitive amplifier circuit is applied to a storage circuit. The invention has the advantages of simple structure, lower power, lower requirement for working voltages, high stability and application in various storage circuits.
Description
(1) technical field:
The present invention relates to the sensor amplifier of semiconductor memory, sensitive amplifier circuit and the method for work and the application of the semiconductor memory that particularly a kind of sensing circuit that can be used as semiconductor memory uses.
(2) background technology:
Sense amplifier is an important component part of semiconductor memory, and it directly has influence on the reading speed of semiconductor memory.The data that sense amplifier obtains storing on the storage element by the small signal variation of amplifying on the bit line.Along with the increase of storage element number on every bit line of modern reservoir, the stray capacitance on the bit line also increases thereupon, has so just reduced the reading speed of sense amplifier and has increased the delay of signal.Therefore design high-speed a, low-power consumption, sense amplifier that antijamming capability is stronger just becomes more important.
A kind of commonly used, traditional sense amplifier as shown in Figure 5.In this structure, the action of sense amplifier is divided into precharge and reads two stages.In pre-charging stage, storage element and virtual storage element disconnect by gauge tap and current comparator, and pre-charge circuit is charged to a certain fixed value (between supply voltage and the ground) in advance with the output voltage of current comparator; In the stage of reading, pre-charge circuit disconnects, storage element and virtual storage element are connected with current comparator by gauge tap, and current comparator compares the electric current that flows through storage element and virtual storage element, and export high or low level according to the different current values that flow through storage element.The output of current comparator obtains the output of this traditional sense amplifier after phase inverter is anti-phase.
The electric current that flows through storage element is by the data that store on the storage element (0 or 1) decision, and its bigger current value ratio less current value exceeds about 2-3 orders of magnitude.The current value that flows through virtual storage element is a certain intermediate value that flows through two kinds of different electric currents of storage element.
The pre-charge circuit of this traditional sense amplifier and current comparator circuit are as shown in Figure 6, wherein M1, M2, M3 are pre-charge circuit, M4-M8 is a current comparison circuit, and to be this traditional sense amplifier read the control signal that two stages change to precharge and data for EN, EQ.
There are some shortcomings in normally used sense amplifier above-mentioned:
1, power consumption is bigger, and the power supply power supply capacity is had relatively high expectations;
2, require to have the circuit of a generation pre-charge voltage, increased the complexity of circuit;
3, circuit need and be read two stages and change precharge, has increased the complicacy of control circuit;
4, the circuit structure complexity has reduced reliability.
As mentioned above, there is the shortcoming that some are difficult to overcome in normally used sense amplifier.
(3) summary of the invention:
The object of the present invention is to provide a kind of sensitive amplifier circuit and method of work and application of semiconductor memory, it has solved the problem that prior art exists, and has overcome the shortcoming that the normally used sense amplifier that is applied to semiconductor memory above-mentioned exists.
Technical scheme of the present invention: a kind of sensitive amplifier circuit that is used for semiconductor memory, this circuit comprises Schmidt's impact damper, phase inverter 1, phase inverter 2 and comprises the storage element of bit line selector switch that this circuit is characterised in that having one is used to detect the size of current that flows through storage element and is converted into the current detector that voltage signal is exported; Storage element, current detector, Schmidt's impact damper, phase inverter 1, phase inverter 2 are connected successively.
Above-mentioned said current detector comprises two metal-oxide-semiconductors of two reference current sources and formation current mirror, and two reference current sources link to each other respectively with two metal-oxide-semiconductors that constitute current mirror, and two reference current sources can be made of active or passive device.
A kind of method of work that is used for the sensitive amplifier circuit of semiconductor memory is characterized in that it may further comprise the steps:
(1) current detector detects and to flow through the size of current of storage element, and is converted into voltage signal and exports;
(2) Schmidt's impact damper carries out shaping to the signal of current detector output;
(3) output signal of 1 pair of Schmidt's impact damper of phase inverter is carried out anti-phase;
(4) output signal of 2 pairs of phase inverters 1 of phase inverter is carried out anti-phasely, and provides the carrying load ability of sensitive amplifier circuit output.
The method of work of current detector is in the above-mentioned said step (1):
One of them of (1) two reference current source provides the electric current that flows through storage element and flows through the electric current of two metal-oxide-semiconductors that constitute current mirror;
(2) gained flows through the electric current of two metal-oxide-semiconductors that constitute current mirror and the electric current of another reference current source compares;
(3) Bi Jiao result exports with the form of voltage signal.
A kind of application that is used for the sensitive amplifier circuit of semiconductor memory is characterized in that it is applied in the reservoir circuit.
Superiority of the present invention is: the sensitive amplifier circuit that the present invention relates to has simple in structure, characteristics such as power consumption is lower, the operating voltage requirement is lower, stable height, can be applied in the various reservoir circuit.
(4) description of drawings:
Fig. 1 is the sensitive amplifier circuit of the related a kind of semiconductor memory of the present invention and the circuit block diagram in method of work and the application thereof.
Fig. 2 is sensitive amplifier circuit and the sense amplifier in method of work and the application and the current detection circuit figure of the related a kind of semiconductor memory of the present invention.
Fig. 3 is the sensitive amplifier circuit of the related a kind of semiconductor memory of the present invention and the application circuit legend 1 in method of work and the application thereof.
Fig. 4 is the sensitive amplifier circuit of the related a kind of semiconductor memory of the present invention and the application circuit legend 2 in method of work and the application thereof.
Fig. 5 is the partial circuit block diagram of reservoir and traditional sense amplifier.
Fig. 6 is the pre-charge circuit of traditional sense amplifier and the circuit diagram of current comparator circuit.
(5) embodiment:
Embodiment: a kind of sensitive amplifier circuit of semiconductor memory,
Provide a kind of novel sensitive amplifier circuit that is applied to semiconductor memory as shown in Figure 1, it comprises:
Current detector is used to detect the size of current that flows through storage element, and is converted into voltage signal and exports;
Schmidt's impact damper, the signal that current detector is exported carries out shaping;
Phase inverter 1 carries out anti-phase to the output signal of Schmidt's impact damper;
Phase inverter 2 carries out anti-phasely to the output signal of phase inverter 1, and provide the carrying load ability of sensitive amplifier circuit output;
The storage element that comprises the bit line selector switch that links to each other with the current detector input.
Above-mentioned said current detector is applied in the sensitive amplifier circuit as shown in Figure 2, is used to detect the size of current that flows through storage element, and is converted into voltage signal and exports.
Above-mentioned said current detector has used reference current source I
1, I
2(Fig. 2), reference current source I
1, I
2Can constitute reference current source I by various active or passive devices
1, I
2Effect be: when current detector and storage element and Schmidt's impact damper disconnect, make flow through the metal-oxide-semiconductor M1 of current detector inside, the current value of M2 is respectively I
1, I
2
Method of work of the present invention is: the related sensitive amplifier circuit of the present invention is when work (Fig. 1), current detector at first detects the current value that flows through storage element, the electric current that flows through storage element has two kinds of different values, and its value is determined by the data that store on the storage element (0 or 1); When the current value that flows through storage element was big, the voltage signal of current detector output was a higher level; When the current value that flows through storage element hour, the voltage signal of current detector output is one than low level; Carry out shaping from the voltage signal of current detector output through Schmidt's impact damper, obtain the steeper square-wave signal of the gradient; The output signal of Schmidt's impact damper obtains the output signal of homophase behind the two-stage phase inverter, this output signal is the output signal of sensitive amplifier circuit just.
The related current detector of the present invention is applied to (Fig. 2) in the sensitive amplifier circuit, is used to detect the size of current that flows through storage element, and is converted into voltage signal and exports, and the structure and the principle of current detector are as follows:
In the current detector that Fig. 2 mentions, the breadth length ratio of metal-oxide-semiconductor M1, M2 is respectively (W/L)
1, (W/L)
2, the current value of reference current source is respectively I
1, I
2, the electric current that flows through storage element has two kinds of different values, and with the different pieces of information (0 or 1) that stores on the corresponding storage element, these two kinds of big I of different current values differ 2-3 orders of magnitude.When current detector was started working, the electric current that flows through M1 was I
M1=I
1-I
Storage element, because the mirror image effect of M1, the current value that flows through M2 is:
I
M2=(I
1-I
Storage element) (W/L)
2/ (W/L)
1
(formula 1)
When the current value that flows through storage element is big, have:
I
M2<I
2
(formula 2)
Make current detector be output as a higher level signal.
When the current value that flows through storage element hour has:
I
M2>I
2
(formula 3)
Make current detector be output as one than low level signal.
From the above mentioned, corresponding to the difference (0 or 1) of the data that store on the storage element, this current detector has produced different output signals.
Fig. 2 and used reference current source I
1, I
2Multiple constructive method is arranged, can constitute by various active and passive devices.Reference current source I
1, I
2Effect be the reference current that is used to provide certain numerical value.
A kind of application (as shown in Figure 3) that is used for the sensitive amplifier circuit of semiconductor memory is characterized in that this sensitive amplifier circuit is applied in the reservoir circuit.
Above-mentioned said sensitive amplifier circuit be applied to comprise in the reservoir circuit eeprom memory read detection module and eflash storer read detection module (as shown in Figure 4).
Claims (6)
1. sensitive amplifier circuit that is used for semiconductor memory, this circuit comprises Schmidt's impact damper, phase inverter 1, phase inverter 2 and comprises the storage element of bit line selector switch that this circuit is characterised in that having one is used to detect the size of current that flows through storage element and is converted into the current detector that voltage signal is exported; Storage element, current detector, Schmidt's impact damper, phase inverter 1, phase inverter 2 are connected successively.
2. the sensitive amplifier circuit that is used for semiconductor memory according to claim 1, it is characterized in that said current detector comprises two metal-oxide-semiconductors of two reference current sources and formation current mirror, two reference current sources link to each other respectively with two metal-oxide-semiconductors that constitute current mirror, and two reference current sources can be made of active or passive device.
3. method of work that is used for the sensitive amplifier circuit of semiconductor memory is characterized in that it may further comprise the steps:
(1) current detector detects and to flow through the size of current of storage element, and is converted into voltage signal and exports;
(2) Schmidt's impact damper carries out shaping to the signal of current detector output;
(3) output signal of 1 pair of Schmidt's impact damper of phase inverter is carried out anti-phase;
(4) output signal of 2 pairs of phase inverters 1 of phase inverter is carried out anti-phasely, and provides the carrying load ability of sensitive amplifier circuit output.
4. the method for work that is used for the sensitive amplifier circuit of semiconductor memory according to claim 3 is characterized in that the method for work of current detector in the said step (1) is:
One of them of (1) two reference current source provides the electric current that flows through storage element and flows through the electric current of two metal-oxide-semiconductors that constitute current mirror;
(2) gained flows through the electric current of two metal-oxide-semiconductors that constitute current mirror and the electric current of another reference current source compares;
(3) Bi Jiao result exports with the form of voltage signal.
5. application that is used for the sensitive amplifier circuit of semiconductor memory is characterized in that this sensitive amplifier circuit is applied in the reservoir circuit.
6. the application that is used for the sensitive amplifier circuit of semiconductor memory according to claim 5 is characterized in that said sensitive amplifier circuit is applied to comprise in the reservoir circuit detection module that reads that reads detection module and eflash storer of eeprom memory.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100588761A CN101373627A (en) | 2007-08-20 | 2007-08-20 | Sensitive amplifier circuit of semiconductor memory and operating method and application thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100588761A CN101373627A (en) | 2007-08-20 | 2007-08-20 | Sensitive amplifier circuit of semiconductor memory and operating method and application thereof |
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| Publication Number | Publication Date |
|---|---|
| CN101373627A true CN101373627A (en) | 2009-02-25 |
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ID=40447739
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100588761A Pending CN101373627A (en) | 2007-08-20 | 2007-08-20 | Sensitive amplifier circuit of semiconductor memory and operating method and application thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656097B (en) * | 2009-08-28 | 2012-09-26 | 苏州东微半导体有限公司 | Sensitive amplifier circuit applied to semiconductor memory and work method thereof |
| CN108270428A (en) * | 2018-02-06 | 2018-07-10 | 上海艾为电子技术股份有限公司 | Buffer and way to play for time |
| CN109257024A (en) * | 2018-09-29 | 2019-01-22 | 上海华虹宏力半导体制造有限公司 | Sensitive amplifier circuit |
-
2007
- 2007-08-20 CN CNA2007100588761A patent/CN101373627A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656097B (en) * | 2009-08-28 | 2012-09-26 | 苏州东微半导体有限公司 | Sensitive amplifier circuit applied to semiconductor memory and work method thereof |
| CN108270428A (en) * | 2018-02-06 | 2018-07-10 | 上海艾为电子技术股份有限公司 | Buffer and way to play for time |
| CN108270428B (en) * | 2018-02-06 | 2022-04-22 | 上海艾为电子技术股份有限公司 | Buffer and buffering method |
| CN109257024A (en) * | 2018-09-29 | 2019-01-22 | 上海华虹宏力半导体制造有限公司 | Sensitive amplifier circuit |
| CN109257024B (en) * | 2018-09-29 | 2022-06-17 | 上海华虹宏力半导体制造有限公司 | Sensitive amplifier circuit |
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Application publication date: 20090225 |