CN101373336A - Method for optimizing exposure device monitoring - Google Patents
Method for optimizing exposure device monitoring Download PDFInfo
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- CN101373336A CN101373336A CNA2007100450427A CN200710045042A CN101373336A CN 101373336 A CN101373336 A CN 101373336A CN A2007100450427 A CNA2007100450427 A CN A2007100450427A CN 200710045042 A CN200710045042 A CN 200710045042A CN 101373336 A CN101373336 A CN 101373336A
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Abstract
The invention discloses a monitoring method for optimizing an exposure device. The monitoring of the exposure device aims at monitoring the uniformity of a characteristic size and the focusing stability of the working of the exposure device. The monitoring method combines the monitoring of the uniformity of the characteristic size with the monitoring of the focusing stability; a crystal plate is divided into two parts, wherein one part is used for measuring the uniformity of the characteristic size and the other part is used for monitoring the focusing stability of the exposure device; measuring data of the two parts can be read on the same crystal plate at the same time, and the uniformity of the characteristic size and the focusing stability of the working of the exposure device can be subjected to parallel processing and analysis. Compared with the prior art, the invention can effectively shorten the time required in the monitoring process and improve the accuracy of the monitoring of the focusing stability.
Description
Technical field
The present invention relates to the monitoring of the duty of exposure device, relate in particular to the uniformity coefficient of characteristic dimension of exposure device work and the monitoring of focus point stability.
Background technology
Along with improving constantly of the integrated level of integrated chip, the chip features size of making causes the whole manufacture craft of chip increasingly sophisticated also in continuous reduction.For guaranteeing still to have yield rate preferably, whole process flow and appliance arrangement are required strictness more.To the monitoring of technology and appliance arrangement, keep its good operating state just to become the saving cost so, keep a very essential link of good yield rate.In this small-feature-size technology, especially very strict to the requirement of exposure device duty.When these fine patterns of exposure, whether the uniformity coefficient of the pattern that exposure device exposes and the stability of its focusing seriously affect it and can produce in a large number, are the prerequisites that guarantees good yields so it is monitored.
To the monitoring of exposure device mainly is monitoring to the uniformity coefficient and the focusing stability of characteristic dimension.These 2 directly affect the fine pattern that exposes and whether can reach technical indicator.Traditional method for supervising carries out respectively the monitoring of these two parameters.
At first in entire wafer respectively with the expose to the sun pattern of series of identical characteristic dimension of identical energy and focal length, read full wafer characteristic dimension data then, analyze and handle these data, draw the characteristic dimension uniformity coefficient.And then on an other wafer respectively with identical energy, different focal lengths, the pattern of a series of gradual change characteristic dimensions of exposing to the sun reads the characteristic dimension data on the full wafer wafer then, analyzes and handles these data, draws the stability of focusing.Whether the duty by these two parameter decision exposure devices meets the demands at last.
In traditional method, the monitoring of these two parameters is carried out respectively.Focusing on when monitoring, its measurement data can be polluted by subject wafer upper surface, and the uneven influence of the even heating of photoresistance crawling causes the deviation of precision.
Summary of the invention
The object of the present invention is to provide a kind of method of optimizing exposure device monitoring, this method can effectively shorten the monitor procedure required time, improves the degree of accuracy of focusing stability monitoring.
For solving the problems of the technologies described above, the invention provides the method for a kind of fusion feature size evenness and focusing stability monitoring, described method is the wafer separated into two parts, a part is with the method for the characteristic dimension uniformity coefficient figure that exposes to the sun, in order to the monitoring features size evenness, another part is with the varifocal characteristic dimension analytic approach figure that exposes to the sun, in order to the monitoring focusing stability, read this two parts characteristic dimension data at last simultaneously, carry out parallel parsing and processing.
Described characteristic dimension uniformity coefficient method is respectively with the expose to the sun pattern of series of identical characteristic dimension of identical energy and focal length.Described varifocal characteristic dimension analytic approach is respectively with identical energy, different focal lengths, the pattern of a series of gradual change characteristic dimensions of exposing to the sun.
Described the wafer separated into two parts, be used for the overwhelming majority that monitoring feature size evenness wafer partly accounts for the wafer total area, should be positioned at zone and be used to monitor focusing stability wafer part near center wafer, while be no more than two grid in the grid that wafer exposes to the sun, avoid the influence of Waffer edge defective and error to measurement result.
Be used to monitor the wafer part of focusing stability, the full wafer wafer of focusing stability is the same to have a bigger zoom test specification in order to guarantee to test with traditional being used to, and needs further to segment given wafer area.
The last data that just can read these two Partial Feature sizes on same wafer adopt excel macro definition program just can analyze and handle these data simultaneously, judge whether the uniformity coefficient and the focusing stability of characteristic dimension meets the demands.
Compared with prior art, when carrying out the focusing stability monitoring, do not need to change sheet, to the Monitoring and Positioning of focusing stability on wafer near center wafer than in the zonule, avoided the crystal column surface pollution, the Waffer edge defective, the inhomogeneous influence of the even heating of photoresistance crawling to measurement result, these external data are read part and are only needed once just to read the measured value of needed these two parameters, have effectively shortened the monitor procedure required time, have improved the degree of accuracy of focusing stability monitoring.
Description of drawings
A kind of method for supervising of optimizing exposure device of the present invention is provided by following embodiment and accompanying drawing.
Fig. 1 is wafer feature size evenness and focusing stability test pattern
1 wafer blank parts is the uniformity coefficient that is used for testing the characteristic dimension of exposing to the sun
2 wafer dash areas are used for test exposure device focusing stability
3 based on varifocal characteristic dimension analytic approach refinement wafer dash area 2 test focusing stability synoptic diagram
Embodiment
Below will the method for supervising of optimization exposure device of the present invention be described in further detail.
At first referring to Fig. 1 wafer is divided into two parts, a part 1 is used for the monitoring feature size evenness, and an other dash area 2 is used to monitor the stability that exposure device focuses on.
Be used for the overwhelming majority that monitoring feature size evenness wafer partly accounts for the wafer total area, should be positioned at zone and be used to monitor focusing stability wafer part near center wafer, and be no more than two lattice shown in Fig. 1, the uniformity coefficient that had so both guaranteed the test feature size has covered most of area of wafer to guarantee result's reliability, again to the test position fix of focusing stability in the zone less, to avoid wafer surface pollution, Waffer edge defective, the inhomogeneous influence of the even heating of photoresistance crawling to the focusing stability degree of accuracy near center wafer.
Then respectively with identical energy and identical focal length at expose to the sun the respectively pattern of series of identical characteristic dimension of test feature size evenness wafer part.
Based on varifocal characteristic dimension analytic approach, in test focusing stability part, for guaranteeing and traditional being used to tests that the full wafer wafer of focusing stability is the same to have a bigger zoom test specification, need this part zone of progressive refinement, referring among Fig. 13, then respectively with identical energy, different focal lengths, the pattern of a series of gradual change characteristic dimensions of exposing to the sun.
Read the data of this two parts characteristic dimension at last in same wafer, parallel parsing and processing can adopt excel macro definition program to carry out parallel parsing and processing, and whether monitoring features size evenness and focusing stability meet the demands.
Method of the present invention is characteristic dimension uniformity coefficient and focusing stability monitoring to be finished on same wafer, avoided the operation of changing sheet when measuring another parameter; Simultaneously the monitoring to focusing stability is positioned on the wafer near in the less zone of center wafer, has avoided the crystal column surface pollution, the Waffer edge defective, the inhomogeneous influence to measurement result of the even heating of photoresistance crawling has improved measuring accuracy.In addition, can read wafer two parts characteristic dimension data simultaneously, parallel processing and analysis draw the characteristic dimension uniformity coefficient of exposure device work and the stability of gathering simultaneously, save the monitor procedure required time.
Claims (6)
1. method of optimizing exposure device monitoring, this method has merged exposure device characteristic dimension uniformity coefficient and focusing stability monitoring, it is characterized in that: the wafer separated into two parts, a part is with the method for the characteristic dimension uniformity coefficient figure that exposes to the sun, in order to the monitoring features size evenness, another part is with the varifocal characteristic dimension analytic approach figure that exposes to the sun, in order to the monitoring focusing stability, read this two parts characteristic dimension data at last simultaneously, carry out parallel processing and analysis.
2. a kind of according to claim 1 method of optimizing exposure device monitoring is characterized in that: described characteristic dimension uniformity coefficient method is respectively with the expose to the sun pattern of series of identical characteristic dimension of identical energy and focal length.
3. a kind of according to claim 1 method of optimizing exposure device monitoring is characterized in that: described varifocal characteristic dimension analytic approach is respectively with identical energy, different focal lengths, the pattern of a series of gradual change characteristic dimensions of exposing to the sun.
4. a kind of according to claim 1 method of optimizing exposure device monitoring, it is characterized in that: described the wafer separated into two parts, be used for the overwhelming majority that monitoring feature size evenness wafer partly accounts for the wafer total area, should be positioned at zone and be used to monitor focusing stability wafer part, and be no more than two grid in the grid that wafer exposes to the sun near center wafer.
5. as a kind of method of optimizing exposure device monitoring as described in the claim 4, it is characterized in that: describedly be used to monitor focusing stability wafer part, the full wafer wafer of focusing stability is the same to have a bigger zoom test specification in order to guarantee to test with traditional being used to, and needs further to segment given wafer area.
6. a kind of according to claim 1 method of optimizing exposure device monitoring is characterized in that: described parallel parsing and processing are to adopt excel macro definition program can carry out parallel parsing and processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100450427A CN101373336B (en) | 2007-08-20 | 2007-08-20 | Method for optimizing exposure device monitoring |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2007100450427A CN101373336B (en) | 2007-08-20 | 2007-08-20 | Method for optimizing exposure device monitoring |
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| CN101373336A true CN101373336A (en) | 2009-02-25 |
| CN101373336B CN101373336B (en) | 2011-02-02 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102200696A (en) * | 2011-05-27 | 2011-09-28 | 上海宏力半导体制造有限公司 | Method for determining optimal photoetching process parameters by using focusing and exposure matrix |
| CN102929105A (en) * | 2012-11-13 | 2013-02-13 | 美迪亚印刷设备（杭州）有限公司 | Exposure quality detection method |
| CN106325004A (en) * | 2016-08-26 | 2017-01-11 | 广州兴森快捷电路科技有限公司 | Energy uniformity detection method of LDI exposure machine |
| CN109839798A (en) * | 2017-11-28 | 2019-06-04 | 三星电子株式会社 | Extreme ultraviolet mask making provides monitoring macro method and optical near-correction method |
| CN112612184A (en) * | 2020-12-14 | 2021-04-06 | 华虹半导体(无锡)有限公司 | Method for measuring critical dimension of graph |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3605064B2 (en) * | 2001-10-15 | 2004-12-22 | 株式会社ルネサステクノロジ | Focus monitor photomask, focus monitor method, focus monitor device and device manufacturing method |
| EP1394616A1 (en) * | 2002-08-29 | 2004-03-03 | ASML Netherlands BV | An alignment tool, a lithographic apparatus, an alignment method and a device manufacturing method |
| US7113256B2 (en) * | 2004-02-18 | 2006-09-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method with feed-forward focus control |
-
2007
- 2007-08-20 CN CN2007100450427A patent/CN101373336B/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102200696A (en) * | 2011-05-27 | 2011-09-28 | 上海宏力半导体制造有限公司 | Method for determining optimal photoetching process parameters by using focusing and exposure matrix |
| CN102929105A (en) * | 2012-11-13 | 2013-02-13 | 美迪亚印刷设备（杭州）有限公司 | Exposure quality detection method |
| CN106325004A (en) * | 2016-08-26 | 2017-01-11 | 广州兴森快捷电路科技有限公司 | Energy uniformity detection method of LDI exposure machine |
| CN106325004B (en) * | 2016-08-26 | 2018-01-30 | 广州兴森快捷电路科技有限公司 | LDI exposure machine energy uniformity detection methods |
| CN109839798A (en) * | 2017-11-28 | 2019-06-04 | 三星电子株式会社 | Extreme ultraviolet mask making provides monitoring macro method and optical near-correction method |
| CN109839798B (en) * | 2017-11-28 | 2023-12-19 | 三星电子株式会社 | Extreme ultraviolet mask manufacturing method, method for providing monitoring macro and optical proximity correction method |
| CN112612184A (en) * | 2020-12-14 | 2021-04-06 | 华虹半导体(无锡)有限公司 | Method for measuring critical dimension of graph |
| CN112612184B (en) * | 2020-12-14 | 2022-06-07 | 华虹半导体(无锡)有限公司 | Method for measuring critical dimension of graph |
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| CN101373336B (en) | 2011-02-02 |
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