CN101364628B - Semi-conductor light emitter and manufacturing method thereof - Google Patents
Semi-conductor light emitter and manufacturing method thereof Download PDFInfo
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- CN101364628B CN101364628B CN2007101437877A CN200710143787A CN101364628B CN 101364628 B CN101364628 B CN 101364628B CN 2007101437877 A CN2007101437877 A CN 2007101437877A CN 200710143787 A CN200710143787 A CN 200710143787A CN 101364628 B CN101364628 B CN 101364628B
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Abstract
The invention discloses a semiconductor light-emitting device, which includes a sapphire substrate with a protruding part, and a semiconductor light-emitting lamination structure formed above the sapphire substrate, wherein at least one outer surface of the protruding part is a facet, a non-polar plane or a semi-polar plane, moreover, the semiconductor light-emitting lamination structure substantially accords with the outline of the protruding part. In one embodiment, the facet can be the non-polar plane or the semi-polar plane.
Description
Technical field
The present invention is about a kind of semiconductor light-emitting apparatus and manufacture method thereof, especially about having semiconductor light-emitting device and the manufacture method thereof of outstanding crystal face sapphire substrate.
Background technology
The epitaxial loayer of nitride semiconductor light-emitting device is formed on sapphire substrate usually, and the growth face of sapphire substrate is generally { 0001} crystal face (also being called " c " face).Grow up laminated buergerite (wurtzite) structure that is generally of nitride-based semiconductor on this crystal face, on the particular crystal orientation of this kind structure, the non-zero dipole moment in crystal (nonzero volume dipole moment) can form spontaneous polarization (spontaneous polarization).In addition, the lattice constant between each nitride layer is not mated the stress that produces and can be caused piezoelectric polarization (piezoelectric polarization).
Spontaneous polarization is with the piezoelectric polarization meeting and close the generation electrostatic field.When having electric field in the quantum well structure, along with electric field increases, can be with (energy band) in quantum well layer can jumbo inclination or bending.Therefore, the wave function in electronics and hole is with separated from one another, and causing both, the Overlap integral of wave function (overlapintegral) reduces.Because the luminous efficiency of luminescent layer is decided by this Overlap integral, therefore, when electric field increases, the efficient of nitride semiconductor light-emitting device will with reduction.
Summary of the invention
The semiconductor light emitting layered structure that semiconductor light-emitting apparatus of the present invention comprises the sapphire substrate with male part and is formed at the sapphire substrate top.At least one outer surface of this male part or part outer surface are crystal face (facet), non-polar plane (non-polar plane) and/or semi-polarity face (semi-polarplane).Crystal face is preferably non-{ 0001} face.In addition, the semiconductor light emitting layered structure roughly conforms to the profile of male part substantially.
In one embodiment of the invention, the crystal face of male part is { 11-20}, { 10-10}, { 11-23} or { 10-11}.In another embodiment of the present invention, the male part external form is pyramid, frustum (frustum) or ridged (ridge).
Description of drawings
Fig. 1 is the profile that shows according to the semiconductor device of one embodiment of the invention;
Fig. 2～6th shows the manufacturing flow chart according to the semiconductor light-emitting apparatus of one embodiment of the invention;
Fig. 7 is the profile that shows according to the semiconductor light-emitting apparatus of another embodiment of the present invention; And
Fig. 8 is the vertical view of sapphire substrate after the demonstration etching.
The simple declaration of element conventional letter
100～semiconductor light-emitting apparatus; 110～sapphire substrate; 111～male part; 120～resilient coating; 130～N-shaped semiconductor layer; 131～table top; 140～luminescent layer; 150～p-type semiconductor layer; 160～transparency conducting layer; 170～N-shaped electrode; 180～p-type electrode.
Embodiment
Below coordinate graphic explanation embodiments of the invention.
With reference to figure 1.The semiconductor light-emitting apparatus 100 of one embodiment of the invention comprises sapphire substrate 110 and is formed at semiconductor light emitting layered structure on sapphire substrate 110.Form a male part 111 on sapphire substrate 110, at least a portion of male part 111 outer surfaces or all form the non-{ crystal face of 0001} (facet).If crystal face { 11-20}, { 10-10}, { 11-23}, { 1122} or { 10-11} can effectively reduce the piezoelectric field effect in the semiconductor light emitting layered structure that forms on it.Wherein, { the 11-20} face is called again " a " face; { the 10-10} face is called again " m " face, and this both is all nonpolar (non-polar) face.{ 1122} is semi-polarity (semi-polar) face.
Male part of the present invention is not limited to comprise above-mentioned crystal face, comprises other non-polar planes that can reduce piezoelectric field effect in the semiconductor light emitting layered structure (non-polar plane) or semi-polarity face (semi-polarplane) and also can.At this, so-called non-polar plane refers on the particular crystal orientation of crystal, in the situation that do not apply external force or extra electric field, does not have or exist hardly dipole moment person; So-called semi-polarity face refers to its degree of polarization between non-polar plane and for example person between " c " face isopolarity face.
The semiconductor light emitting layered structure be sequentially resilient coating 120, N-shaped semiconductor layer 130, luminescent layer 140, p-type semiconductor layer 150, with transparency conducting layer 160.Above-mentioned each layer sequentially is formed on substrate 110, and roughly conforms to the profile of male part 111, and in other words, each layer is parallel to the outer surface of male part 111 substantially.In addition, N-shaped semiconductor layer 130 can also be opposite with said sequence with the formation order of p-type semiconductor layer 150.
The material of resilient coating 120 is for example GaN, AlN or AlGaN.P-type semiconductor layer 150, N-shaped semiconductor layer 130 are Al with the material of luminescent layer 140
xGa
yIn
zN (wherein x+y+z=1), for example: AlN, AlGaN, InGaN, InN or GaN.Luminescent layer 130 can be single heterojunction structure (singleheterostructure; SH), double-heterostructure (double heterostructure; DH), bilateral double-heterostructure (double-side double heterostructure; DDH) or multi layer quantum well (multi-quantum well; MQW).Transparency conducting layer 160 for example comprises ITO, IZO, ZnO, CTO, In
2O
3, SnO
2, the electrically conducting transparent material such as MgO, CdO or thin metal layer.The thickness of thin metal layer depends on the wavelength by light, generally speaking, its thickness less than
As shown in Figure 1, form N-shaped electrode 170 on N-shaped semiconductor layer 130, form p-type electrode 180 on transparency conducting layer 160, the electric current that comes from p-type electrode 180 disperses to surrounding by transparency conducting layer 160.N-shaped electrode 170 is not limited to the present embodiment with the configuration mode of p-type electrode 180, and any its position or structure of being electrically connected to respectively N-shaped semiconductor layer 130 and p-type semiconductor layer 150 of can making all can adopt.The material of N-shaped electrode 170 and p-type electrode 180 is as the alloy of Au, Cu, Al, Cr, Pt, Ti, Ni, In or above-mentioned material or laminated.
Manufacturing process below with reference to Fig. 2～6 explanation semiconductor light-emitting apparatus of the present invention.
As shown in Figure 2, use as SiO on sapphire substrate 110
2Form male part 111 etc. hard mask (hard mask) or other masks in wet etching (wet etching) mode, the one side at least of male part 111 or the part of one side are specific crystal face.This crystal face does not comprise { 0001}.Preferably, form { 11-20}, { 10-10}, { 11-23}, { 1122} or the { face such as 10-11}.The direction of crystal face and profile can be subjected to the impact of etching condition and change.For example, the external form of male part 111 can form taper, frustum, ridged etc.Wherein taper such as pyrometric cone, and three inclined-planes of pyrometric cone are preferably { 1-102}; Ridged such as triangular ridges, and two inclined-planes of triangular ridges are preferably, and { 1-102}, wherein the top of triangular ridges not only can be a pinnacle, also can be a flat-top.
Then, as shown in Figure 3, form resilient coating 120 so that a growth substrate with suitable lattice constant to be provided on sapphire substrate 110.Resilient coating 120 can be grown up at the temperature of 200 ℃～900 ℃, and its thickness can be between 0.001 μ m～1 μ m.Form again N-shaped semiconductor layer 130 on resilient coating 120.
As shown in Figure 4, form luminescent layer 140 and p-type semiconductor layer 150 on N-shaped semiconductor layer 130.Luminescent layer 140 can be multiple quantum trap structure, and the multiple quantum trap structure on the male part 111 with above-mentioned crystal face of growing up can be the luminescent layer of nonpolar (non-polar) or semi-polarity (semi-polar).
As Fig. 5 and shown in Figure 6, form transparency conducting layer 160 on p-type semiconductor layer 150, and self-induced transparency conductive layer 160 is etched to N-shaped semiconductor layer 130 to form table top 131.Form again N-shaped electrode 170 on table top 131, and form p-type electrode 180 on transparency conducting layer 160.In the present embodiment, p-type electrode 180 is formed to the height approximately identical with N-shaped electrode 170, yet N-shaped electrode 170 and the p-type electrode 180 of differing heights can also be accepted.
As shown in Figure 7, the semiconductor light-emitting apparatus of another embodiment of the present invention comprises the male part 111 more than two.As shown in Figure 8, etch a plurality of male part 111 on sapphire substrate 110.The mode that forms the semiconductor light emitting layered structure on male part 111 can be with reference to above-mentioned steps.
Although the present invention has illustrated as above, the scope that so it is not intended to limiting the invention or enforcement order.For various modifications and the change that the present invention does, neither spirit of the present invention and the scope of taking off.
Claims (20)
1. semiconductor light-emitting apparatus comprises:
Sapphire substrate has male part, the part of at least one outer surface of this male part comprises non-{ 0001} crystal face, non-polar plane or semi-polarity face; And
The semiconductor light emitting layered structure is formed at above this substrate, and is consistent with the profile of this male part.
2. semiconductor light-emitting apparatus as claimed in claim 1, wherein this crystal face is selected from { 11-20}, { 10-10}, { 11-23}, { 1122}, the and { group that 10-11} consists of.
3. semiconductor light-emitting apparatus as claimed in claim 1, wherein the profile of this male part is selected from pyramid, ridged, and the frustum group that consists of.
4. semiconductor light-emitting apparatus as claimed in claim 1, wherein the profile of this male part is pyrometric cone, and at least one outer surface of this male part is { 1-102}.
5. semiconductor light-emitting apparatus as claimed in claim 1, wherein this male part forms a ridged, and at least one outer surface of this male part is { 1-102}.
6. semiconductor light-emitting apparatus as claimed in claim 1, wherein each layer in this semiconductor light emitting layered structure is parallel to this outer surface of this male part.
7. semiconductor light-emitting apparatus as claimed in claim 1, wherein this semiconductor light emitting layered structure comprises:
The N-shaped semiconductor layer;
The p-type semiconductor layer; And
Luminescent layer is between this N-shaped semiconductor layer and this p-type semiconductor layer.
8. semiconductor light-emitting apparatus as claimed in claim 6, wherein this semiconductor light emitting layered structure also comprises:
Resilient coating is between this substrate and this semiconductor light emitting layered structure.
9. semiconductor light-emitting apparatus as claimed in claim 6 also comprises:
The N-shaped electrode is electrically connected with this N-shaped semiconductor layer; And
The p-type electrode is electrically connected with this p-type semiconductor layer.
10. semiconductor light-emitting apparatus as claimed in claim 9, wherein this N-shaped electrode and this p-type electrode reach identical height.
11. the manufacture method of a semiconductor light-emitting apparatus comprises:
Sapphire substrate is provided;
This sapphire substrate of etching and formation have the non-{ male part of 0001} crystal face;
Form luminescent layer above this male part;
Form the p-type semiconductor layer in a side of this luminescent layer; And
Form the N-shaped semiconductor layer in the opposite side of this luminescent layer.
12. the manufacture method of semiconductor light-emitting apparatus as claimed in claim 11, wherein this male part forms a profile, and it is selected from pyramid, ridged, reaches the group that frustum consists of.
13. the manufacture method of semiconductor light-emitting apparatus as claimed in claim 11 also comprises:
Form resilient coating on this sapphire substrate.
14. the manufacture method of semiconductor light-emitting apparatus as claimed in claim 13, wherein this resilient coating is formed at 200 ℃～900 ℃.
15. the manufacture method of semiconductor light-emitting apparatus as claimed in claim 11 also comprises:
Form transparency conducting layer in the side of this luminescent layer away from this sapphire substrate.
16. the manufacture method of semiconductor light-emitting apparatus as claimed in claim 11 also comprises:
Formation is electrically connected to the N-shaped electrode of this N-shaped semiconductor layer; And
Formation is electrically connected to the p-type electrode of this p-type semiconductor layer.
17. the manufacture method of semiconductor light-emitting apparatus as claimed in claim 16, wherein this N-shaped electrode is formed to identical height with this p-type electrode.
18. the manufacture method of semiconductor light-emitting apparatus as claimed in claim 11, wherein this male part forms more than two.
19. the manufacture method of semiconductor light-emitting apparatus as claimed in claim 11, wherein this luminescent layer forms multiple quantum trap structure.
20. the manufacture method of semiconductor light-emitting apparatus as claimed in claim 12, wherein the profile of this male part is selected the group that consists of from pyrometric cone, triangular ridges.
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| CN2007101437877A CN101364628B (en) | 2007-08-06 | 2007-08-06 | Semi-conductor light emitter and manufacturing method thereof |
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| CN2007101437877A CN101364628B (en) | 2007-08-06 | 2007-08-06 | Semi-conductor light emitter and manufacturing method thereof |
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| CN101364628B true CN101364628B (en) | 2013-06-26 |
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| CN105742430A (en) * | 2016-03-07 | 2016-07-06 | 太原理工大学 | LED epitaxial structure and preparation method therefor |
| CN109411583B (en) | 2018-11-01 | 2020-12-04 | 京东方科技集团股份有限公司 | Light emitting unit, manufacturing method thereof and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004128107A (en) * | 2002-10-01 | 2004-04-22 | Murata Mfg Co Ltd | Optical semiconductor device |
| WO2007063920A1 (en) * | 2005-11-30 | 2007-06-07 | Rohm Co., Ltd. | Gallium nitride semiconductor light emitting element |
| US7250314B2 (en) * | 2001-02-08 | 2007-07-31 | Sony Corporation | Display system and method of producing the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7250314B2 (en) * | 2001-02-08 | 2007-07-31 | Sony Corporation | Display system and method of producing the same |
| JP2004128107A (en) * | 2002-10-01 | 2004-04-22 | Murata Mfg Co Ltd | Optical semiconductor device |
| WO2007063920A1 (en) * | 2005-11-30 | 2007-06-07 | Rohm Co., Ltd. | Gallium nitride semiconductor light emitting element |
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