CN101357451A - Method for increasing grinding wafer flatness - Google Patents
Method for increasing grinding wafer flatness Download PDFInfo
- Publication number
- CN101357451A CN101357451A CNA2007100445560A CN200710044556A CN101357451A CN 101357451 A CN101357451 A CN 101357451A CN A2007100445560 A CNA2007100445560 A CN A2007100445560A CN 200710044556 A CN200710044556 A CN 200710044556A CN 101357451 A CN101357451 A CN 101357451A
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- Prior art keywords
- grinding
- wafer
- grinding head
- abrasive disk
- flatness
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
The invention provides a method for improving the planeness of a ground wafer; the method is applied on a grinding machine which comprises a grinding head and a grinding disc; the grinding head is used for adsorbing and fixing the wafer; the grinding disc is used with the grinding head and used for grinding the wafer, wherein, the motion range of the grinding head does not exceed the surface of the grinding disc; the brim of the bottom of the grinding head is provided with a fixing ring which is used for fixing the wafer and is contacted with the grinding disc completely. Compared with the prior art, the even grinding force exerted on the wafer can improve the planeness of the wafer surface in one grinding process and can improve the production efficiency and the yield of the wafer simultaneously.
Description
Technical field
The present invention relates to the cmp processing procedure, relate in particular to a kind of method that improves grinding wafer flatness.
Background technology
At present, bring into use the metal material of copper in the integrated circuit, adopt dual damascene to inlay the copper-connection that (Dual Damascene) technology realizes integrated circuit usually as interconnection structure.Adopting dual-damascene technics to make integrated circuit copper interconnecting all can adopt cmp (Chemical Mechanical Polish) to make the planarization of copper layer after copper being filled in the lead groove, remove unnecessary copper on the dielectric layer, allow wafer surface reach comprehensive planarization, carry out thin film deposition in order to follow-up.
Wafer all can the number of quarter before entering the cmp processing procedure to distinguish wafer, the edge of wafer surface number is set the quarter of wafer usually, thus the slit of carving number all filled by copper, in the cmp processing procedure, need exactly to reach flatness preferably with removing unnecessary copper.
In the prior art, because grinding head is in the process of grinding, the scope of the covering of grinding head has exceeded wafer surface, be the scope that covers of grinding head some do not contact with abrasive disk, when some does not contact with abrasive disk when grinding head, stressed will change of grinding head on abrasive disk, be that the abrasive power that is subjected to of wafer is just inhomogeneous, can have influence on the polished flatness of wafer, number locating the quarter on the wafer can number to locate copper residual because abrasive power inhomogeneous causes carving, thereby causes wafer owing to number unclear scrapping at quarter.For fear of this situation, need grinding wafers edge once more usually, yet grinding operation accidentally can influence the flatness of center wafer position on the contrary once more at present, in addition, the meeting of grinding prolongs milling time once more, causes the raising of production cost.
Summary of the invention
The object of the present invention is to provide a kind of method that improves grinding wafer flatness, it can improve the flatness of once grinding grinding wafers surface in the processing procedure.
For achieving the above object, the invention provides a kind of method that improves grinding wafer flatness, this method is applied on the grinder station, and grinder station comprises and is used to adsorb and the grinding head of fixed wafer, and the abrasive disk that is used with grinding head, abrasive disk is used for grinding wafers; Wherein, the range of movement of grinding head does not exceed the surface of abrasive disk.
The edge of grinding head bottom surface is provided with the retainer ring of fixed wafer, and this retainer ring contacts with abrasive disk fully.
Whether the range of movement that adopts the spacing at grinding head center and abrasive disk center to weigh grinding head exceeds the surface of abrasive disk.
Grind in the processing procedure at the 200mm wafer, the spacing between grinding head center and the abrasive disk center is not more than 5 inches.
Compared with prior art, adopt method of the present invention, the uniform abrasive power that wafer is subjected to can effectively improve in the flatness of once grinding wafer surface in the processing procedure, has improved production efficiency, has also improved the yield of wafer simultaneously.
Description of drawings
To the description of one embodiment of the invention, can further understand purpose, specific structural features and the advantage of its invention by following in conjunction with its accompanying drawing.Wherein, accompanying drawing is:
Fig. 1 is the structural representation of grinder station.
The specific embodiment
The invention provides a kind of method that improves grinding wafer flatness, this method improves the flatness that wafer grinds by the range of movement of adjusting grinding head in the grinder station.
See also Fig. 1, the bottom surface of grinding head 1 is made of adsorption section and retainer ring.Adsorption section (not label) is used to adsorb wafer (not shown) grinds, and retainer ring (not label) is used for fixing wafer.
Abrasive disk 3 is used with grinding head 1, and abrasive disk 3 is used for the copper on grinding wafers surface.In the motion process of grinding head 1, the wafer retainer ring of grinding head 1 is wanted to contact with abrasive disk 3 fully, can guarantee that like this wafer is subjected to uniform abrasive power, thereby guarantees the flatness of wafer surface.
In preferred embodiment of the present invention, the scope that grinding head 3 bottom surfaces are covered can not exceed the scope that abrasive disk 3 upper surfaces are covered.In practical operation, for control grinding head 1 on grinder station does not exceed abrasive disk 3, usually adopt the spacing at grinding head 1 center and abrasive disk 3 centers to weigh, in the cmp processing procedure of the copper wiring of the wafer of 200mm (eight inches), spacing between grinding head 1 center and abrasive disk 3 centers can not be moved in the scope of abrasive disk 3 to guarantee grinding head 1 fully greater than 5 inches.
In other preferred embodiments of the present invention, also can adopt other parameters to guarantee that grinding head 1 moves fully in the scope of abrasive disk 3, and according to the size adjusting parameter value of concrete grinding wafers.
Adopt method of the present invention effectively to improve in the flatness of once grinding wafer surface in the processing procedure, not only enhance productivity, also improved the yield of wafer.
Claims (4)
1, a kind of method that improves grinding wafer flatness, this method is applied on the grinder station, and grinder station comprises and is used to adsorb and the grinding head of fixed wafer, and the abrasive disk that is used with grinding head, and abrasive disk is used for grinding wafers; It is characterized in that: the range of movement of grinding head does not exceed the surface of abrasive disk.
2, a kind of method that improves grinding wafer flatness as claimed in claim 1, it is characterized in that: the edge of grinding head bottom surface is provided with the retainer ring of fixed wafer, and this retainer ring contacts with abrasive disk fully.
3, a kind of method that improves grinding wafer flatness as claimed in claim 2 is characterized in that: whether the range of movement that adopts the spacing at grinding head center and abrasive disk center to weigh grinding head exceeds the surface of abrasive disk.
4, a kind of method that improves grinding wafer flatness as claimed in claim 3 is characterized in that: grind in the processing procedure at the 200mm wafer, the spacing between grinding head center and the abrasive disk center is not more than 5 inches.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100445560A CN101357451A (en) | 2007-08-03 | 2007-08-03 | Method for increasing grinding wafer flatness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100445560A CN101357451A (en) | 2007-08-03 | 2007-08-03 | Method for increasing grinding wafer flatness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101357451A true CN101357451A (en) | 2009-02-04 |
Family
ID=40330122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100445560A Pending CN101357451A (en) | 2007-08-03 | 2007-08-03 | Method for increasing grinding wafer flatness |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101357451A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107887265A (en) * | 2016-09-23 | 2018-04-06 | 清华大学 | The polishing method of polissoir |
-
2007
- 2007-08-03 CN CNA2007100445560A patent/CN101357451A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107887265A (en) * | 2016-09-23 | 2018-04-06 | 清华大学 | The polishing method of polissoir |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20090204 |