CN102416596A - Device for improving wafer surface scratched by fixed abrasive polishing pad - Google Patents
Device for improving wafer surface scratched by fixed abrasive polishing pad Download PDFInfo
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- CN102416596A CN102416596A CN2011101385328A CN201110138532A CN102416596A CN 102416596 A CN102416596 A CN 102416596A CN 2011101385328 A CN2011101385328 A CN 2011101385328A CN 201110138532 A CN201110138532 A CN 201110138532A CN 102416596 A CN102416596 A CN 102416596A
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- polishing pad
- abrasive polishing
- pad
- fixed
- abrasive
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to the technical field of semiconductor production, in particular to a device for improving a wafer surface scratched by a fixed abrasive polishing pad. The device comprises a grinding turntable and a lower pad, and is characterized in that: the device further at least comprises a soft brush system, wherein the lower pad and the fixed abrasive polishing pad are sequentially arranged above the grinding turntable from bottom to top, and the fixed abrasive polishing pad is arranged above the lower pad through a transmission device, and can transfer and move above the lower pad through the transmission device; and the soft brush of the soft brush system is contacted with the upper surface of the fixed abrasive polishing pad, and is used for clearing grinding particles which are produced on the surface of the fixed abrasive polishing pad during the chemical and mechanical grinding processes. The device lowers the difficulty of the chemical and mechanical grinding technologies which use the fixed abrasive polishing pad and the requirements on chemical and mechanical abrasive materials during the chemical and mechanical grinding processes; and the yield of wafers is improved.
Description
Technical field
The present invention relates to a kind of semiconductor fabrication technical field, more precisely, the present invention relates to a kind of be fixed device of abrasive polishing pad scratch of crystal column surface that is used to improve.
Background technology
During wafer is made; Along with dwindling of upgrading, lead and the grid size of process technique; Photoetching (Lithography) technology to the smooth degree (Non-uniformity) of crystal column surface require increasingly high, so planarization has become with photoetching and etching is of equal importance and one of complementary indispensable key technology.And chemically mechanical polishing (CMP) technology be at present the most effectively, the most ripe planarization.Chemical-mechanical polishing system is the chemical-mechanical planarization technology that integrates technology such as cleaning, drying, online detection, end point determination; Being integrated circuit to the product of miniaturization, multiple stratification, planarization, slimming development, is that integrated circuit is enhanced productivity, reduced cost, the indispensable technology of wafer overall situation planarization.
Cmp is one and removes processing procedure that it is borrowing combination chemical reaction and mechanical lapping to reach its purpose.And use it in the thin-film body processing procedure of partly leading, utilize it to divest film and make the surface level and smooth more and more smooth.It also is used in the semi-conductive metallization process, is used for removing the metallic film a large amount of on its surface in the dielectric medium film, to form online embolism or metal wire.And after wafer is scaled off from the monocrystalline silicon crystal bar; With regard to have a lot fabrication steps to be used to prepare smooth, light and flawless crystal column surface required with the processing procedure that satisfies integrated circuit; And the cmp processing procedure is used in last one step of wafer production usually; It can make wafer planarizationization, and can eliminate the caused blemish of wafer sawing step from the surface fully.When silicon single crystal bar is sawn into thin slice; Kerf can be left in two sides at wafer in the process that cuts; Must remove, wafer is placed on the polishing plate then, fixes with wax and vacuum; Polishing plate is placed on the polishing machine again wafer is simultaneously worn into as mirror, just can begin to get into the processing procedure of making integrated circuit and assembly.
But in chemical mechanical planarization process, wafer is easy to by the waste material particle scratch under solid abrasive polishing pad, abrasive grains and the quilt grinding, thereby has influence on the planarization efficiency and the yield of wafer.
U.S. Pat 6254460 disclosed Fixed Abrasive Polishing Pad provide a kind of method that adopts fixing abrasive on grinding pad, to realize cmp.Liquid such as deionized water but this technology can not evenly distribute in the process of lapping also can't in time be removed the waste material particle that produces in the process of lapping, because those defectives are prone to make wafer by scratch.
Based on the problems referred to above, be necessary to research and develop new chemical mechanical polishing device.
Summary of the invention
In view of the above problems, the present invention provides a kind of be fixed device of abrasive polishing pad scratch of crystal column surface that is used to improve, and this device comprises and grinds rotating disk, lower floor's pad, it is characterized in that said device also comprises at least:
Soft brush system; Wherein, according to being provided with lower floor's pad and fixed-abrasive polishing pad down, said fixed-abrasive polishing pad is arranged at lower floor pad top through transmission device above the said grinding rotating disk, and the fixed-abrasive polishing pad can transmit mobile through transmission device above lower floor's pad; The soft brush that said soft brush system is comprised contacts with the upper surface of said fixed-abrasive polishing pad, is used for removing the abrasive grains that is produced in chemical mechanical planarization process fixed-abrasive pad interface.
Above-mentioned device wherein, is furnished with the abrasive grains that SiO, CeO, AlO, TaO or MnO class material are processed on the described fixed-abrasive polishing pad.
Above-mentioned device, wherein, the particle diameter of said abrasive grains is 10-1000nm.
Above-mentioned device, wherein, the bristle of said soft brush system is contacted with on the grinding pad when work, and other times do not contact grinding pad.
Above-mentioned device, wherein, said soft brush system is connected with motor, and movement locus, speed, frequency and the bristle of the said soft brush of said Electric Machine Control is for the pressure of grinding pad.
Above-mentioned device, wherein, the lower end of said carrier is provided with groove, and said groove size and wafer size match.
The present invention is used to improve the be fixed device of abrasive polishing pad scratch of crystal column surface, and advantage is:
1. the present invention is used to improve be fixed device and the original chemical mechanical milling tech of abrasive polishing pad scratch of crystal column surface and merges, reduce wafer in chemical mechanical planarization process by the probability of particle scratch.
2. the present invention is used to improve the be fixed device of abrasive polishing pad scratch of crystal column surface and effectively reduces the difficulty of the chemical mechanical milling tech that uses the fixed-abrasive polishing pad.
3. the present invention is used for improving the be fixed device of abrasive polishing pad scratch of crystal column surface and has reduced and use the requirement of the chemical mechanical planarization process of fixed-abrasive polishing pad to the cmp agent.
4. the present invention is used to improve the be fixed device of abrasive polishing pad scratch of crystal column surface and has improved the yield of wafer.
Those skilled in the art reads the detailed description of following preferred embodiment, and with reference to after the accompanying drawing, of the present invention these are incited somebody to action obvious with otherwise advantage undoubtedly.
Description of drawings
With reference to appended accompanying drawing, to describe embodiments of the invention more fully.Yet appended accompanying drawing only is used for explanation and sets forth, and does not constitute limitation of the scope of the invention.
Fig. 1 is that the present invention is used to improve crystal column surface the be fixed device of abrasive polishing pad scratch and the structural representation of other corollary equipments.
The specific embodiment
Referring to shown in Figure 1, be used to improve crystal column surface be fixed device and other corollary equipments of abrasive polishing pad scratch in the present invention, comprising:
Grind rotating disk 2, fixed-abrasive polishing pad 4, carrier 7, cmp agent induction system 9 and soft brush 5; Wherein, said grinding rotating disk 2 tops are according to being provided with down lower floor's pad 3 and fixed-abrasive polishing pad 4, and said grinding rotating disk is connected with rotating shaft 1 for 2 times, and said fixed-abrasive polishing pad 4 passes through power transmission shaft 10 and power transmission shaft 11 relative fixed in the top of lower floor's pad 3; Said carrier 7 is arranged at the top of said solid abrasive polishing pad 4, and carrier 7 ends are provided with handle 8 and the lower end is provided with groove, and groove is used to hold wafer 6; According to grinding rotating disk 2 rotation directions, be provided with cmp agent induction system 9 before the said carrier 7; Said carrier 7 rears are provided with soft brush 5, and soft brush 5 ends are connected with the control motor.
After wafer 6 was placed into carrier 7, the position by the coupled mechanism controls carrier of handle 8 was pushed into suitable height downwards, made the surperficial joint of wafer 6 and fixed-abrasive polishing pad 4, and carrying fixedly, the surface of grinding and polishing pad 4 is furnished with SiO
2CeO
2The abrasive grains that material is processed, and carrier 7 can be moved to other optional positions of grinding rotating disk 2 tops.Open cmp agent induction system 9 and rotating shaft 1 subsequently and grind rotating disk 2 rotations to drive.After grinding rotating disk 2 rotations; The lower floor's pad 3 and the fixed-abrasive polishing pad 4 that fix with it rotate in the lump; Cmp begins; Under the effect of the cmp agent that fixed-abrasive polishing pad 4 and cmp agent induction system 9 flow out, with the out-of-flatness surface grinding polishing of wafer 6, soft brush 5 cleans out the waste material particle that grinds to prevent that surface that waste material remains in fixed-abrasive polishing pad 4 is with wafer 6 scratches simultaneously.The movement locus of the soft brush of Electric Machine Control that links to each other with soft brush 5, speed, cleaning frequency and to the pressure of fixed-abrasive polishing pad 4 etc. to reach best cleaning effect.
After the quilt on the fixed-abrasive polishing pad 4 polishes, rotating drive shaft 10 and power transmission shaft 11, operate to continue cmp the top that makes the fixed-abrasive polishing pad 4 that is not used move to lower floor's pad 3.
Through explanation and accompanying drawing, provided the exemplary embodiments of the ad hoc structure of the specific embodiment, for example, the abrasive grains in this case is SiO
2And CeO
2, based on the present invention's spirit, above-mentioned material is the conversion of available other materials also.Although foregoing invention has proposed existing preferred embodiment, yet these contents are not as limitation.
For a person skilled in the art, read above-mentioned explanation after, various variations and revise undoubtedly will be obvious.Therefore, appending claims should be regarded whole variations and the correction of containing true intention of the present invention and scope as.Any and all scope of equal value and contents all should be thought still to belong in the intent of the present invention and the scope in claims scope.
As an embodiment, the material of wherein being selected for use, condition all are certain, constitute a complete technical scheme.So relating on the problems such as the selection of material, must not use " or " the uncertain word of this type.About selecting for use of material, in claims, illustrate, can be protected.
Claims (6)
1. one kind is used to improve the be fixed device of abrasive polishing pad scratch of crystal column surface, and this device comprises and grinds rotating disk, lower floor's pad, it is characterized in that said device also comprises at least:
Soft brush system; Wherein, according to being provided with lower floor's pad and fixed-abrasive polishing pad down, said fixed-abrasive polishing pad is arranged at lower floor pad top through transmission device above the said grinding rotating disk, and the fixed-abrasive polishing pad can transmit mobile through transmission device above lower floor's pad; The soft brush that said soft brush system is comprised contacts with the upper surface of said fixed-abrasive polishing pad, is used for removing the abrasive grains that is produced in chemical mechanical planarization process fixed-abrasive pad interface.
2. according to claim 1ly be used to improve the be fixed device of abrasive polishing pad scratch of crystal column surface, it is characterized in that, be furnished with the abrasive grains that SiO, CeO, AlO, TaO or MnO class material are processed on the described fixed-abrasive polishing pad.
3. according to claim 2ly be used to improve the be fixed device of abrasive polishing pad scratch of crystal column surface, it is characterized in that the particle diameter of said abrasive grains is 10-1000nm.
4. according to claim 1ly be used to improve the be fixed device of abrasive polishing pad scratch of crystal column surface, it is characterized in that, the bristle of said soft brush system is contacted with on the grinding pad.
5. according to claim 1ly be used to improve the be fixed device of abrasive polishing pad scratch of crystal column surface; It is characterized in that; Said soft brush system is connected with motor, and movement locus, speed, frequency and the bristle of the said soft brush of said Electric Machine Control is for the pressure of grinding pad.
6. according to claim 1ly be used to improve the be fixed device of abrasive polishing pad scratch of crystal column surface, it is characterized in that the lower end of said carrier is provided with groove, said groove size and wafer size match.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101385328A CN102416596A (en) | 2011-05-26 | 2011-05-26 | Device for improving wafer surface scratched by fixed abrasive polishing pad |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101385328A CN102416596A (en) | 2011-05-26 | 2011-05-26 | Device for improving wafer surface scratched by fixed abrasive polishing pad |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102416596A true CN102416596A (en) | 2012-04-18 |
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ID=45941377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101385328A Pending CN102416596A (en) | 2011-05-26 | 2011-05-26 | Device for improving wafer surface scratched by fixed abrasive polishing pad |
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| Country | Link |
|---|---|
| CN (1) | CN102416596A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103659581A (en) * | 2012-09-05 | 2014-03-26 | 上海华虹宏力半导体制造有限公司 | Grinding fluid transfer arm |
| CN117124163A (en) * | 2023-10-27 | 2023-11-28 | 南通恒锐半导体有限公司 | IGBT wafer back polishing machine |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5919082A (en) * | 1997-08-22 | 1999-07-06 | Micron Technology, Inc. | Fixed abrasive polishing pad |
| CN1248496A (en) * | 1998-09-22 | 2000-03-29 | 世大积体电路股份有限公司 | Chemical and mechanical lapping device and method |
| CN1402313A (en) * | 2001-08-02 | 2003-03-12 | 联华电子股份有限公司 | Grinding pad recovery device structure and use |
| US6561880B1 (en) * | 2002-01-29 | 2003-05-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for cleaning the polishing pad of a linear polisher |
| US6890245B1 (en) * | 2002-04-24 | 2005-05-10 | Lam Research Corporation | Byproduct control in linear chemical mechanical planarization system |
-
2011
- 2011-05-26 CN CN2011101385328A patent/CN102416596A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5919082A (en) * | 1997-08-22 | 1999-07-06 | Micron Technology, Inc. | Fixed abrasive polishing pad |
| CN1248496A (en) * | 1998-09-22 | 2000-03-29 | 世大积体电路股份有限公司 | Chemical and mechanical lapping device and method |
| CN1402313A (en) * | 2001-08-02 | 2003-03-12 | 联华电子股份有限公司 | Grinding pad recovery device structure and use |
| US6561880B1 (en) * | 2002-01-29 | 2003-05-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for cleaning the polishing pad of a linear polisher |
| US6890245B1 (en) * | 2002-04-24 | 2005-05-10 | Lam Research Corporation | Byproduct control in linear chemical mechanical planarization system |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103659581A (en) * | 2012-09-05 | 2014-03-26 | 上海华虹宏力半导体制造有限公司 | Grinding fluid transfer arm |
| CN117124163A (en) * | 2023-10-27 | 2023-11-28 | 南通恒锐半导体有限公司 | IGBT wafer back polishing machine |
| CN117124163B (en) * | 2023-10-27 | 2024-01-26 | 南通恒锐半导体有限公司 | IGBT wafer back polishing machine |
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Application publication date: 20120418 |