CN101357295A - Semiconductor discharged-gas processing device - Google Patents
Semiconductor discharged-gas processing device Download PDFInfo
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- CN101357295A CN101357295A CNA2007101382662A CN200710138266A CN101357295A CN 101357295 A CN101357295 A CN 101357295A CN A2007101382662 A CNA2007101382662 A CN A2007101382662A CN 200710138266 A CN200710138266 A CN 200710138266A CN 101357295 A CN101357295 A CN 101357295A
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Abstract
The invention discloses a semiconductor exhaust gas treatment device which can efficiently and reliably decompose the semiconductor exhaust gas, causes the gas to be innoxious, and has excellent maintainability. The device is characterized by comprising a reaction furnace (14) which is composed of a cylindrical reaction furnace body (30), an electric heater (32) and a gas ingress pipe (34); the reaction furnace body is provided with an exhaust gas treatment chamber (38) which is surrounded by refractory material and in which semiconductor exhaust gas X is thermally decomposed, and a gas inlet hole (40) and a gas outlet hole (42) are arranged at the mutually adjacent position at the bottom; the electric heater heats the exhaust gas treatment chamber; the gas ingress pipe guides the semiconductor exhaust gas to the upper part of the exhaust gas treatment chamber, the upper end of the gas ingress pipe is arranged at the upper part of the exhaust gas treatment chamber, and the lower end of the gas ingress pipe is inserted into the gas inlet hole from the outer part of the reaction furnace body in a prominent way.
Description
Technical field
The present invention relates to semiconductor discharged-gas processing device, this semiconductor discharged-gas processing device is used for human body or the harmful semiconductor discharged-gas of environment are carried out thermal oxide decomposing and making it innoxious what discharge from semiconductor-fabricating device.
Background technology
The semiconductor discharged-gas (gas) of discharging from semiconductor-fabricating device is harmful to human body, environment, and, have combustibility, explosivity, a lot of metals there is high corrosivity.As the representative of described semiconductor discharged-gas, can enumerate the hydride of period of element Table III, IV, V group element, for example SiH
4, PH
3, B
2H
6Deng, and in manufacturing process, use and settle responseless SiH
2CL
2, SiHCl
3, Si
2H
6, TEOS (テ ト ラ エ ト キ シ シ ラ Application) etc. the Si compound be also contained in the emission gases.
Carry out such processing in the prior art, that is, make semiconductor discharged-gas by after a large amount of nitrogen dilutions, the concentration of described emission gases is lower than LEL, mixes the back again with excessive air and is discharged in the atmosphere under this state.
But recently along with the raising to environmental protection understanding, it is strict that environmental administrative management becomes, and above-mentioned such method to airborne release has the trend that is limited by strictness.Therefore, must remove the evil to semiconductor discharged-gas energetically.For this reason, when being discharged in the atmosphere,, poisonous gas concentration used semiconductor discharged-gas processing device below the feasible value to semiconductor discharged-gas for being reduced at least.
Processing method as semiconductor discharged-gas, be broadly divided into damp process, absorption method, add four kinds of thermal decomposition method and firing methods, but from function, prime cost (initial cost), operating cost (running cost), whole viewpoint such as space, security is set, can not be known as perfect processing method.
Wherein, add thermal decomposition method and in reacting furnace, set bar-shaped electric heater (electricalheater) especially, semiconductor discharged-gas is imported the high hot heating region that in reacting furnace, forms that produces by this heater, the described electric heating that gas is added thermal decomposition adds thermal decomposition method, well consistent with the demand of operation field, in a large amount of scenes, be used.This is owing to use the described thermal decomposition method that adds, and can remove the evil to the semiconductor discharged-gas of the on-the-spot all kinds that produces of semiconductor manufacturing.
But described employing adds the semiconductor discharged-gas processing device of thermal decomposition method, and use is used as thermal source to the electric heater that electric energy converts heat to, thereby will spend a large amount of electricity charge.
In addition, in operation, in reacting furnace, generate dust as reaction product, thereby, dust is saved bit by bit the operation that to a certain degree words just must temporarily stop the operation of semiconductor discharged-gas processing device and must temporarily stop semiconductor-fabricating device, carry out cleaning work (that is, safeguarding) with the dust removal.Its reason is that the dust of the oxide that the result of worry thermal decomposition generates is piled up at the reacting furnace inner face, causes the stream of semiconductor discharged-gas blocked.
In addition, add in the semiconductor discharged-gas processing device of thermal decomposition method in use, add as semiconductor discharged-gas in the thermal decomposition there to be the main cause of limited reactions: the air supply amount, be applied to energy (surface temperature of electric heater) in the reaction system, the capacity and the speed of the gas that in reaction tube, moves, the influence of the situation of mixing that the emission gases and the turbulent flow of air cause is arranged in addition.That is, emission gases and air carry out laminar flow and move, and reaction efficiency reduces, thereby mix improving reaction efficiency the two very important by turbulent flow.Especially, electric heating adds in the thermal decomposition method, can not obtain strong turbulent flow by flame combustion as the situation of gas combustion method, thereby, stir in order to carry out sufficient air-flow, need to produce separately the mechanism of turbulent flow.
At this, the thing of placing obstacles in path is effectively in order to produce turbulent flow in gas moves, and still, exists the words of barrier that aeration resistance is increased, and the dust that reaction produces piles up easily, can cause aeration resistance to increase thus and causes vicious circle.
Moreover, such as mentioned above, semiconductor discharged-gas has severe corrosive to metal, so, must prevent the anti-corrosion treatment that its surface is corroded to the electric heater that is provided in the reacting furnace, even and carry out such anti-corrosion treatment, it also is difficult preventing from fully to corrode, must frequently change this electric heater because of the difference of user mode (that is the kind of the gas of thermal decomposition).
And, use adds in the semiconductor discharged-gas processing device of thermal decomposition method, there is the top in reacting furnace to accumulate the high hot tendency that electric heater produces, so, whole when maintaining the temperature province of the thermal decomposition that can carry out semiconductor discharged-gas in will be reacting furnace, must make the temperature of the interior bottom of the relatively low reacting furnace of electric heater and temperature consistently carry out work.Like this, the top in the enough high temperature reacting furnace can continue to carry out unnecessary heating by electric heater, can waste electric energy like this.
Summary of the invention
The present invention proposes in view of such problem, and its problem is the maintenance load that improves the thermal decomposition efficient of the semiconductor discharged-gas in first reacting furnace, alleviates second reacting furnace.In other words, major subjects of the present invention provides a kind of semiconductor discharged-gas processing device, and this semiconductor discharged-gas processing device can efficiently and reliably make it innoxious the semiconductor discharged-gas decomposition, and the maintenance excellence.
An aspect of of the present present invention is a kind of semiconductor discharged-gas processing device 10, and it is provided with reacting furnace 14, and described reacting furnace 14 is made of reacting furnace body 30, electric heater 32 and the gas introduction tube 34 of tubular; Described reacting furnace body 30 be provided with by refractory material round inside with the emission gases process chamber 38 of semiconductor discharged-gas thermal decomposition, and offer gas introduction port 40 and gas discharge outlet 42 in the mutual approaching position of bottom; 32 pairs of described emission gases process chambers 38 of described electric heater heat; Described gas introduction tube 34 imports described semiconductor discharged-gas X on the top of described emission gases process chamber 38, its upper end is provided in the top of described emission gases process chamber 38, and described gas introduction port 40 is inserted highlightedly to the outside of described reacting furnace body 30 in its lower end.
Among the present invention, gas introduction port 40 and gas discharge outlet 42 have been offered in approaching position mutually in reacting furnace 14 bottoms, and, in gas introduction port 40, insert gas introduction tube 34, thereby, when semiconductor discharged-gas X flows through gas introduction tube 34 when inner, can described emission gases X and in emission gases process chamber 38 thermal decomposition the semiconductor discharged-gas X that is over of the processing of high temperature between carry out heat exchange.
In addition, gas introduction tube 34 is to be used for parts to the top of the emission gases process chamber 38 that is in the tendency of accumulating high heat semiconductor supply emission gases X.Therefore, the semiconductor discharged-gas X that imports in the emission gases process chamber 38 by gas introduction tube 34 can expose to the open air in high heat reliably, can be with this semiconductor discharged-gas X thermal decomposition effectively.
The feature of second aspect present invention is, in the semiconductor discharged-gas processing device 10 of first aspect, is contained at least among either party of described reacting furnace body 30 or described gas introduction tube 34 in the described electric heater 32.Thus, can prevent reliably that electric heater 32 from being corroded by hydrogen fluoride corrosive gas such as (HF).
The feature of third aspect present invention is, first or the semiconductor discharged-gas processing device 10 of second aspect in, be provided with the scraper plate 36 that moves along the inner peripheral surface of the inner peripheral surface of described gas introduction tube 34 and described reacting furnace body 30 with contactless state.
Among the present invention, can by scraper plate 36 frequently (off and on) will sweeping attached to the dust of the inner peripheral surface of the inner peripheral surface of gas introduction tube 34 and reacting furnace body 30, thereby can prevent that dust is stacked on this inner peripheral surface.Moreover, because scraper plate 36 is along the rotation of the inner peripheral surface of gas introduction tube 34 and reacting furnace body 30, thereby, can often stir the semiconductor discharged-gas X of gas introduction tube 34 and reacting furnace body 30 and form turbulent flow.As a result, can in emission gases process chamber 38, guarantee the sufficient holdup time, with semiconductor discharged-gas X thermal decomposition reliably.
The feature of fourth aspect present invention is, first or the semiconductor discharged-gas processing device 10 of second aspect in, described electric heater 32 is by the upper strata heating element heater that the top of described emission gases process chamber 38 is heated (upper heater element) 32A, constitute with lower floor's heating element heater that the bottom of described emission gases process chamber 38 is heated (lower heaterelement) 32B, and, upper temperature sensor 50 that the temperature on described emission gases process chamber 38 tops is measured and the temperature of lower sensor 52 that the temperature of described emission gases process chamber 38 bottoms is measured are set on described reacting furnace 14; According to the temperature data that described upper temperature sensor 50 is measured the power output of described upper strata heating element heater 32A is controlled, the power output of the described heating element heater 32B of lower floor is controlled according to the temperature data that described temperature of lower sensor 52 is measured.
In the described invention, can carry out temperature control to the upper and lower of emission gases process chamber 38 independently respectively.Therefore, can carry out such control, promptly, the power output of the upper strata heating element heater 32A that reduction is heated the top that is in the emission gases process chamber 38 of accumulating high heat tendency improves the power output of the heating element heater 32B of lower floor that the bottom of the emission gases process chamber 38 that becomes relatively low easily to temperature heats.Its result can suppress waste of electric energy, effectively emission gases process chamber 38 integral body remain on can even temperature zone with semiconductor discharged-gas X thermal decomposition in.
The feature of fifth aspect present invention is, first or the semiconductor discharged-gas processing device 10 of second aspect in, the described gas introduction tube 34 that is provided with a plurality of described gas introduction ports 40 and inserts described gas introduction port 40.Thus, can carry out the processing of jumbo semiconductor discharged-gas X.
According to the present invention, can inside and outside gas introduction tube, carry out the heat exchange of semiconductor discharged-gas X, can be effectively with this semiconductor discharged-gas X thermal decomposition.
And, by being contained at least among either party of reacting furnace body or gas introduction tube in the electric heater, can prevent reliably that electric heater is corroded.
And then, by the scraper plate that moves along the inner peripheral surface of the inner peripheral surface of gas introduction tube and reacting furnace body with contactless state is set, can prevent that dust is stacked on the inner peripheral surface of gas introduction tube and reacting furnace body, and can in the emission gases process chamber, form turbulent flow, improve the thermal decomposition efficient of semiconductor discharged-gas.
In addition, because electric heater is by the upper strata heating element heater that the top of emission gases process chamber is heated, constitute with lower floor's heating element heater that the bottom of emission gases process chamber is heated, and, upper temperature sensor that the temperature on emission gases process chamber top is measured and the temperature of lower sensor that the temperature of emission gases process chamber bottom is measured are set on reacting furnace; According to the temperature data that upper temperature sensor is measured the power output of upper strata heating element heater is controlled, according to the temperature data that the temperature of lower sensor is measured the power output of lower floor's heating element heater is controlled, can carry out temperature control to the upper and lower of emission gases process chamber independently respectively, can suppress waste of electric energy, effectively emission gases process chamber integral body remain on can even temperature zone with semiconductor discharged-gas X thermal decomposition in.
Therefore, the present invention can provide a kind of semiconductor discharged-gas processing device, and this semiconductor discharged-gas processing device can efficiently and reliably make it innoxious the semiconductor discharged-gas decomposition, and the maintenance excellence.
Description of drawings
Fig. 1 is the synoptic diagram of flow process (Off ロ one) of the semiconductor discharged-gas processing device of expression one embodiment of the present of invention.
Fig. 2 is the perspective cross-sectional slice of the reacting furnace of schematic representation one embodiment of the present of invention.
Symbol description
10 semiconductor discharged-gas processing devices
12 inlet washers
14 reacting furnaces
16 outlet washers
18 exhaust fans
22 inlet tubes
24 washing gas supply pipes
28 water circulating pumps
30 reacting furnace bodies
32 electric heaters
32A upper strata heating element heater
32B lower floor heating element heater
32a, 32b ... power supply
34 gas introduction tubes
36 scraper plates
38 emission gases process chambers
40 gas introduction ports
42 gas discharge outlets
48 electric power controlling organizations
50 upper temperature sensor
52 temperature of lower sensors
The X emission gases
The outer gas of A
The specific embodiment
Below according to illustrated embodiment explanation the present invention.Fig. 1 is the synoptic diagram (flow sheet) of the flow process of expression apparatus of the present invention.As shown in the figure, the semiconductor discharged-gas processing device 10 of present embodiment is roughly by inlet washer 12, reacting furnace 14, formations such as outlet washer 16, exhaust fan 18 and water tank (water tank) 20.
The top of described inlet washer 12 is being connected with the semiconductor-fabricating device (not shown) of factory by inlet tube 22, the various semiconductor discharged-gas X that discharge in the semiconductor manufacturing process is imported the top of described inlet washer 12.
In addition, in the present embodiment, inlet washer 12 disposes separately with water tank 20, and, gas supply pipe 24 is connected with drainpipe 26 and the water that inlet washer 12 is discharged is sent into water tank 20 to wash with the two, but, also can stand the inside that is arranged on the washer 12 that also will enter the mouth on the water tank 20 to described inlet washer 12 and directly be communicated with the inside of water tank 20.
And between nozzle 12b and water tank 20, water circulating pump 28 is being set, be used for the water W that stores in the water tank 20 is pumped into nozzle 12b.
Reacting furnace 14 is by the device of thermal oxide decomposition method with semiconductor discharged-gas X decomposition, as shown in Figure 2, is made of reacting furnace body 30, electric heater 32, gas introduction tube 34 and scraper plate 36 etc.
The inside of the tubular that reacting furnace body 30 roughly is made of refractory materials such as potteries is opened and is established parts 30a, asbestos (rock wool), ceramic fibre formations such as (ceramic fiber), heat insulating member 30b and stainless steel (SUS) etc. are trapped among described inside and open the periphery of establishing parts 30a, shell (outer jacket) 30c is trapped among the periphery of described heat insulating member 30b, the inner inner space of establishing parts 30a of opening is sealed, and forms emission gases process chamber 38.
Offering gas introduction port 40 in the bottom center of described reacting furnace body 30, and offering gas discharge outlet 42 with the approaching position of described gas introduction port 40.And, in gas introduction port 40, inserted the gas introduction tube 34 that is used in the semiconductor discharged-gas X importing emission gases process chamber 38, connecting decomposition gas feed tube 44 on gas discharge outlet 42, the semiconductor discharged-gas X that this decomposition gas feed tube 44 has been used for resolution process in emission gases process chamber 38 gives and to deliver to outlet washer 16 described later.
Upstream side at described decomposition gas feed tube 44 is installed with water jet 44a, is injected in its inside by the water W on water circulating pump 28 pumps by water jet 44a.
In the semiconductor discharged-gas processing device 10 of present embodiment, as shown in Figure 2, electric heater 32 constitutes by the upper strata heating element heater 32A that the top of emission gases process chamber 38 is heated with to the heating element heater 32B of lower floor that heat the bottom of emission gases process chamber 38.
In addition, be contained in the inside of reacting furnace body 30 in described upper strata heating element heater 32A and the heating element heater 32B of lower floor (the being electric heater 32) quilt, more specifically say, be contained in the inner inner surface side of establishing parts 30a of opening in the quilt.
And, at upper strata heating element heater 32A and lower floor heating element heater 32B end separately power supply 32a and 32b being set, described power supply 32a is connected with electric power controlling organization 48 with 46b by electric wire 46a respectively with 32b.Described electric power controlling organization 48 is controlled the electric power that supplies to upper strata heating element heater 32A and the heating element heater 32B of lower floor respectively by timer formations such as (sequencer).
At this, in the semiconductor discharged-gas processing device 10 of present embodiment, the upper temperature sensor 50 that the temperature on emission gases process chamber 38 tops is measured is being set on reacting furnace 14, with the temperature of lower sensor 52 that the temperature of emission gases process chamber 38 bottoms is measured, the temperature data that upper temperature sensor 50 and temperature of lower sensor 52 are measured is sent to electric power controlling organization 48 by distribution 50a and 52a respectively.Thereby the temperature data of measuring according to upper temperature sensor 50 and temperature of lower sensor 52 is controlled the amount of the electric power that supplies to upper strata heating element heater 32A and the heating element heater 32B of lower floor respectively.
Interval between first stirring rod 60 and gas introduction tube 34 inner peripheral surfaces, and the interval between second stirring rod 62 and reacting furnace body 30 inner peripheral surfaces suitably adjusts and gets final product, but be preferably 1mm～2mm.In addition, the material of first stirring rod 60 and second stirring rod 62 is preferably stainless steel, but also can use other material that can obtain hear resistance, sufficient mechanical, thermal shock strength, for example also can use the pottery of aluminium oxide, mullite (system ラ イ ト) etc. etc.
In addition, the configuration of first stirring rod 60 and second stirring rod 62, radical, length, shape etc. can be corresponding to appropriate changes such as the composition (composition) of semiconductor discharged-gas X, concentration, air quantity.
When drive motors 54, the scraper plate 36 that constitutes like that as mentioned above, it is installed in first stirring rod 60 on the swivel plate 58 and second stirring rod 62 and does circle-shaped rotation with contactless state along the inner peripheral surface of the inner peripheral surface of gas introduction tube 34 and reacting furnace body 30 and move.Be used for timing means (not shown) that described motor 54 is only moved in the predefined time by on motor 54, being provided with, can make scraper plate 36 carry out intermittent movement, for example to make scraper plate 36 each hours action 1 minute.
In the present embodiment, outlet washer 16 upright being located on the water tank 20 that stores water W or soup, new water NW from nozzle 16b spraying is sent into water tank 20, but, also can described outlet washer 16 be set separately with water tank 20 and the two be coupled together, the water that outlet washer 16 is discharged is sent into water tank 20 with pipeline.
And, connect the semiconductor discharged-gas X that processing is over by air-breather 64 at the top exit of outlet washer 16 and be discharged into exhaust fan 18 in the atmosphere.
New water NW by the nozzle 16b spraying of outlet washer 16 supplies to described water tank 20 always, thereby, to make remaining water overflow (overflow) above the water W of ormal weight and be sent to drain treatment apparatus (not shown) in order not store.
In order to protect various piece not by fluoric acid corrosivity compositions such as (hydrofluoric acid) corrosion contained among the semiconductor discharged-gas X or that produce because of the decomposition of described emission gases X, the part in the semiconductor discharged-gas processing device 10 of present embodiment except reacting furnace 14 has been implemented coating, the coating of the corrosion resistance that polyvinyl chloride, polyethylene, unsaturated polyester resin and fluoride resin etc. make.
The following describes the effect of the semiconductor discharged-gas processing device 10 of present embodiment.Semiconductor discharged-gas X from the semiconductor-fabricating device discharge, be imported in the inlet washer 12 by inlet tube 22, contact with the vaporific water W that nozzle 12b scatters, dust among the described gas X is contacted with water W from nozzle 12b and be captured, and be admitted to water tank 20.And, also the water soluble ingredient among the emission gases X is absorbed among the water W simultaneously and remove.
The moistening semiconductor discharged-gas X of low temperature that has been cleaned by inlet washer 12 is sent to gas introduction tube 34 by washing gas supply pipe 24.Emission gases X rises along gas introduction tube 34, carries out heat exchange between the semiconductor discharged-gas X in uphill process and after the thermal decomposition, in abundant preheating the moment be released in the emission gases process chamber 38 from the front end of gas introduction tube 34.
Fully after the preheating, be released to the emission gases X of (being in the emission gases process chamber 38 specifically) in the reacting furnace body 30 from the front end of gas introduction tube 34, be maintained at sufficiently high temperature, in the emission gases process chamber 38 that produces turbulent flow by scraper plate 36, directly be thermal decomposited.
At this moment, when comprising fluoride among the semiconductor discharged-gas X, the thermal decomposition by semiconductor discharged-gas X produces fluorine (F
2), and described fluorine and airborne hydrogen or water react immediately and generate severe toxicity and very easily water-soluble hydrogen fluoride.
Like this, the semiconductor discharged-gas X that has been decomposed by thermal oxide continues to be imported into decomposition gas feed tube 44 via gas discharge outlet 42.
Water W by water jet 44a sprays after decomposition gas feed tube 44 flows down, is sent to water tank 20 by the bottom that exports washer 16.
Then, by water jet 44a dust or water soluble ingredient are effectively removed, and the semiconductor discharged-gas X that has been cooled is imported into outlet washer 16, the downside in the outlet washer 16 is towards last side flow.
And, in outlet washer 16, clean fully and lower the temperature, harmful components are removed the semiconductor discharged-gas X that finishes dealing be over be discharged in the atmosphere by exhaust fan 18 by new water NW.
Semiconductor discharged-gas processing device 10 according to present embodiment, gas introduction port 40 and gas discharge outlet 42 are being offered in mutual approaching position in the bottom of reacting furnace 14, and, in gas introduction port 40, inserted gas introduction tube 34, thereby, as semiconductor discharged-gas X during in gas introduction tube 34 internal flows, can make described emission gases X and in emission gases process chamber 38 thermal decomposition the semiconductor discharged-gas X that is over of the processing of high temperature between carry out heat exchange.Therefore, can be efficiently with semiconductor discharged-gas X thermal decomposition.
And, be contained in the electric heater 32 in the reacting furnace body 30, thereby can reliably prevent electric heater 32 by the corrosion of corrosive gas such as hydrogen fluoride, can reduce because of electric heater 32 damaged heaters replacing frequencies of carrying out.
Moreover, be provided with in the reacting furnace 14 with contactless state and carry out circle-shaped mobile scraper plate 36 along the inner peripheral surface of gas introduction tube 34 and the inner peripheral surface of reacting furnace body 30, thereby, (off and on) will sweeping attached to the dust of the inner peripheral surface of the inner peripheral surface of gas introduction tube 34 and reacting furnace body 30 frequently, thereby can prevent that dust is stacked on this inner peripheral surface.Moreover, because scraper plate 36 is along the rotation of the inner peripheral surface of gas introduction tube 34 and reacting furnace body 30, thereby, can often stir the semiconductor discharged-gas X in gas introduction tube 34 and the reacting furnace body 30 and form turbulent flow.As a result, can in emission gases process chamber 38, guarantee the sufficient holdup time, with semiconductor discharged-gas X thermal decomposition reliably.
And (1) electric heater 32 constitutes by the upper strata heating element heater 32A that the top of emission gases process chamber 38 is heated with to the heating element heater 32B of lower floor that heat the bottom of emission gases process chamber 38; And (2) are provided with upper temperature sensor 50 that the temperature on emission gases process chamber 38 tops is measured and the temperature of lower sensor 52 that the temperature of emission gases process chamber 38 bottoms is measured on reacting furnace 14; (3) temperature data of measuring according to upper temperature sensor 50 is controlled the power output of upper strata heating element heater 32A, according to the temperature data that temperature of lower sensor 52 is measured the power output of the heating element heater 32B of lower floor is controlled, therefore, can carry out temperature control to the upper and lower of emission gases process chamber 38 independently respectively.Therefore, can carry out such control, promptly, the power output of the upper strata heating element heater 32A that reduction is heated the top that is in the emission gases process chamber 38 of accumulating high heat tendency, the power output of the heating element heater 32B of lower floor that heat the bottom that raising becomes relatively low emission gases process chamber 38 easily to temperature, can suppress waste of electric energy, effectively emission gases process chamber 38 integral body remain on can even temperature zone with semiconductor discharged-gas X thermal decomposition in.
In the foregoing description, show situation about being contained in the electric heater 32 in the reacting furnace body 30, still, also can be in the thicker gas introduction tube 34 that is contained in wall thickness formation in the electric heater 32.In the case, can prevent reliably that also electric heater 32 from being corroded by corrosive gas such as hydrogen fluoride.And, when being contained in the gas introduction tube 34 in electric heater 32, can reduce the heat (so-called heat loss (heat loss)) of escaping toward the outside of reacting furnace 14, can further improve the thermal decomposition efficient of semiconductor discharged-gas X.
In addition, in the foregoing description, show the situation that is provided with a gas introduction port 40 and a gas introduction tube 34 on reacting furnace 30, still, the quantity that is arranged on the gas introduction port 40 on the described reacting furnace 30 and inserts the gas introduction tube 34 of gas introduction port 40 also can be a plurality of.Its reason is by a plurality of gas introduction ports 40 and gas introduction tube 34 are set, also can handle jumbo semiconductor discharged-gas X.
And then, in above-mentioned example, illustrated situation about being contained in the electric heater 32 in the reacting furnace body 30, but, for example the corrosivity composition proportion in the semiconductor discharged-gas X that will carry out disinfection low, the corrosion of electric heater 32 is not constituted under the situation of problem, also can be arranged on electric heater 32 in the emission gases process chamber 38.
Claims (5)
1. a semiconductor discharged-gas processing device is characterized in that, is provided with reacting furnace, and described reacting furnace is made of reacting furnace body, electric heater and the gas introduction tube of tubular;
Described reacting furnace body be provided with by refractory material round inside with the emission gases process chamber of semiconductor discharged-gas thermal decomposition, and offer gas introduction port and gas discharge outlet in the mutual approaching position of bottom;
Described electric heater heats described emission gases process chamber;
Described gas introduction tube imports the top of described emission gases process chamber to described semiconductor discharged-gas, and its upper end is provided in the top of described emission gases process chamber, and described gas introduction port is inserted highlightedly to the outside of described reacting furnace body in its lower end.
2. semiconductor discharged-gas processing device as claimed in claim 1 is characterized in that, is contained at least among either party of described reacting furnace body or described gas introduction tube in the described electric heater.
3. semiconductor discharged-gas processing device as claimed in claim 1 or 2 is characterized in that, is provided with the scraper plate that moves along the inner peripheral surface of the inner peripheral surface of described gas introduction tube and described reacting furnace body with contactless state.
4. semiconductor discharged-gas processing device as claimed in claim 1 or 2, it is characterized in that described electric heater constitutes by the upper strata heating element heater that the top of described emission gases process chamber is heated with to lower floor's heating element heater that heat the bottom of described emission gases process chamber, and
Upper temperature sensor that the temperature on described emission gases process chamber top is measured and the temperature of lower sensor that the temperature of described emission gases process chamber bottom is measured are set on described reacting furnace;
According to the temperature data that described upper temperature sensor is measured the power output of described upper strata heating element heater is controlled, the power output of described lower floor heating element heater is controlled according to the temperature data that described temperature of lower sensor is measured.
5. semiconductor discharged-gas processing device as claimed in claim 1 or 2 is characterized in that, the described gas introduction tube that is provided with a plurality of described gas introduction ports and inserts described gas introduction port.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2007101382662A CN101357295A (en) | 2007-07-31 | 2007-07-31 | Semiconductor discharged-gas processing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101382662A CN101357295A (en) | 2007-07-31 | 2007-07-31 | Semiconductor discharged-gas processing device |
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| CN101357295A true CN101357295A (en) | 2009-02-04 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102607923A (en) * | 2012-04-11 | 2012-07-25 | 中国科学院半导体研究所 | Silicon carbide material corrosion furnace |
| TWI489063B (en) * | 2009-08-07 | 2015-06-21 | Ebara Corp | Burning type apparatus for processing off-gas |
| CN112588740A (en) * | 2020-11-26 | 2021-04-02 | 瑞燃(上海)环境工程技术有限公司 | Caking removing device used in waste gas purification guide pipe and use method thereof |
-
2007
- 2007-07-31 CN CNA2007101382662A patent/CN101357295A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI489063B (en) * | 2009-08-07 | 2015-06-21 | Ebara Corp | Burning type apparatus for processing off-gas |
| US10174942B2 (en) | 2009-08-07 | 2019-01-08 | Ebara Corporation | Combustion-type exhaust gas treatment apparatus |
| CN102607923A (en) * | 2012-04-11 | 2012-07-25 | 中国科学院半导体研究所 | Silicon carbide material corrosion furnace |
| CN102607923B (en) * | 2012-04-11 | 2014-04-09 | 中国科学院半导体研究所 | Silicon carbide material corrosion furnace |
| CN112588740A (en) * | 2020-11-26 | 2021-04-02 | 瑞燃(上海)环境工程技术有限公司 | Caking removing device used in waste gas purification guide pipe and use method thereof |
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Application publication date: 20090204 |