CN101346235A - 低能量、长使用寿命微流喷射装置 - Google Patents
低能量、长使用寿命微流喷射装置 Download PDFInfo
- Publication number
- CN101346235A CN101346235A CNA2006800487656A CN200680048765A CN101346235A CN 101346235 A CN101346235 A CN 101346235A CN A2006800487656 A CNA2006800487656 A CN A2006800487656A CN 200680048765 A CN200680048765 A CN 200680048765A CN 101346235 A CN101346235 A CN 101346235A
- Authority
- CN
- China
- Prior art keywords
- fluid
- miniflow
- shower nozzle
- actuator
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012530 fluid Substances 0.000 title claims abstract description 119
- 239000010410 layer Substances 0.000 claims abstract description 97
- 239000011241 protective layer Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 21
- 230000015556 catabolic process Effects 0.000 claims abstract description 9
- 238000006731 degradation reaction Methods 0.000 claims abstract description 8
- 229920000642 polymer Polymers 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 4
- 239000000428 dust Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 claims 3
- 238000006116 polymerization reaction Methods 0.000 claims 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 239000013047 polymeric layer Substances 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 7
- 239000006260 foam Substances 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 229910004490 TaAl Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- -1 pottery Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910004491 TaAlN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14088—Structure of heating means
- B41J2/14112—Resistive element
- B41J2/14129—Layer structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14032—Structure of the pressure chamber
- B41J2/1404—Geometrical characteristics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2002/14185—Structure of bubble jet print heads characterised by the position of the heater and the nozzle
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14387—Front shooter
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Nozzles (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/317,575 US7413289B2 (en) | 2005-12-23 | 2005-12-23 | Low energy, long life micro-fluid ejection device |
US11/317,575 | 2005-12-23 | ||
PCT/US2006/049063 WO2007076029A2 (en) | 2005-12-23 | 2006-12-21 | Low energy, long life micro-fluid ejection device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101346235A true CN101346235A (zh) | 2009-01-14 |
CN101346235B CN101346235B (zh) | 2011-04-13 |
Family
ID=38193097
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800487656A Expired - Fee Related CN101346235B (zh) | 2005-12-23 | 2006-12-21 | 微流喷头及延长其热喷射致动器使用寿命的方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7413289B2 (zh) |
EP (1) | EP1968797B1 (zh) |
CN (1) | CN101346235B (zh) |
AU (1) | AU2006330919B2 (zh) |
BR (1) | BRPI0620293A2 (zh) |
CA (1) | CA2631454C (zh) |
TW (1) | TWI330597B (zh) |
WO (1) | WO2007076029A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107000431A (zh) * | 2014-11-19 | 2017-08-01 | 马姆杰特科技有限公司 | 具有改进的寿命的喷墨喷嘴装置 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100643328B1 (ko) * | 2005-06-21 | 2006-11-10 | 삼성전자주식회사 | 잉크젯 프린터 헤드 및 그 제조방법 |
US7413289B2 (en) * | 2005-12-23 | 2008-08-19 | Lexmark International, Inc. | Low energy, long life micro-fluid ejection device |
US8409458B2 (en) * | 2007-03-02 | 2013-04-02 | Texas Instruments Incorporated | Process for reactive ion etching a layer of diamond like carbon |
CN101873935A (zh) * | 2007-11-24 | 2010-10-27 | 惠普开发有限公司 | 具有加热电阻边缘保护层的喷墨打印装置打印头芯片 |
TWI394239B (zh) * | 2008-12-17 | 2013-04-21 | Univ Ishou | The integrated circuit with the isolation layer of metal ion migration and its encapsulation structure |
US9138994B2 (en) | 2009-03-03 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS devices and methods of fabrication thereof |
US8079668B2 (en) | 2009-08-25 | 2011-12-20 | Silverbrook Research Pty Ltd | Crack-resistant thermal bend actuator |
EP2490896B1 (en) * | 2009-08-25 | 2016-05-25 | Memjet Technology Limited | Crack-resistant thermal bend actuator |
US8281482B2 (en) * | 2009-08-25 | 2012-10-09 | Zamtec Limited | Method of fabricating crack-resistant thermal bend actuator |
US8784511B2 (en) * | 2009-09-28 | 2014-07-22 | Stmicroelectronics (Tours) Sas | Method for forming a thin-film lithium-ion battery |
EP2563596B1 (en) * | 2010-04-29 | 2015-07-22 | Hewlett Packard Development Company, L.P. | Fluid ejection device |
WO2015005933A1 (en) * | 2013-07-12 | 2015-01-15 | Hewlett-Packard Development Company, L.P. | Thermal inkjet printhead stack with amorphous thin metal protective layer |
US10177310B2 (en) | 2014-07-30 | 2019-01-08 | Hewlett Packard Enterprise Development Lp | Amorphous metal alloy electrodes in non-volatile device applications |
US10532571B2 (en) | 2015-03-12 | 2020-01-14 | Hewlett-Packard Development Company, L.P. | Printhead structure |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0613219B2 (ja) * | 1983-04-30 | 1994-02-23 | キヤノン株式会社 | インクジェットヘッド |
JPS60116451A (ja) * | 1983-11-30 | 1985-06-22 | Canon Inc | 液体噴射記録ヘツド |
US4794411A (en) * | 1987-10-19 | 1988-12-27 | Hewlett-Packard Company | Thermal ink-jet head structure with orifice offset from resistor |
US5831648A (en) * | 1992-05-29 | 1998-11-03 | Hitachi Koki Co., Ltd. | Ink jet recording head |
DE69621665T2 (de) * | 1995-03-03 | 2003-03-06 | Canon Kk | Tintenstrahlkopf, Substrat für einen Tintenstrahlkopf und Tintenstrahlgerät |
JPH09300623A (ja) * | 1996-05-17 | 1997-11-25 | Hitachi Koki Co Ltd | インクジェット記録ヘッド及びその装置 |
US6908563B2 (en) * | 2001-11-27 | 2005-06-21 | Canon Kabushiki Kaisha | Ink-jet head, and method for manufacturing the same |
JP2004230811A (ja) * | 2003-01-31 | 2004-08-19 | Fuji Photo Film Co Ltd | 液滴吐出ヘッド |
US6902256B2 (en) * | 2003-07-16 | 2005-06-07 | Lexmark International, Inc. | Ink jet printheads |
JP4350658B2 (ja) * | 2004-03-24 | 2009-10-21 | キヤノン株式会社 | 液体吐出ヘッド用基板及び液体吐出ヘッド |
US7413289B2 (en) * | 2005-12-23 | 2008-08-19 | Lexmark International, Inc. | Low energy, long life micro-fluid ejection device |
-
2005
- 2005-12-23 US US11/317,575 patent/US7413289B2/en active Active
-
2006
- 2006-12-21 WO PCT/US2006/049063 patent/WO2007076029A2/en active Application Filing
- 2006-12-21 EP EP06848047.4A patent/EP1968797B1/en not_active Expired - Fee Related
- 2006-12-21 CA CA2631454A patent/CA2631454C/en not_active Expired - Fee Related
- 2006-12-21 CN CN2006800487656A patent/CN101346235B/zh not_active Expired - Fee Related
- 2006-12-21 BR BRPI0620293-4A patent/BRPI0620293A2/pt not_active IP Right Cessation
- 2006-12-21 AU AU2006330919A patent/AU2006330919B2/en not_active Ceased
- 2006-12-22 TW TW095148622A patent/TWI330597B/zh not_active IP Right Cessation
-
2008
- 2008-06-25 US US12/145,606 patent/US7784918B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107000431A (zh) * | 2014-11-19 | 2017-08-01 | 马姆杰特科技有限公司 | 具有改进的寿命的喷墨喷嘴装置 |
Also Published As
Publication number | Publication date |
---|---|
US20070146436A1 (en) | 2007-06-28 |
AU2006330919B2 (en) | 2010-10-28 |
TWI330597B (en) | 2010-09-21 |
US20080259131A1 (en) | 2008-10-23 |
EP1968797B1 (en) | 2015-03-04 |
CN101346235B (zh) | 2011-04-13 |
EP1968797A4 (en) | 2010-08-11 |
CA2631454C (en) | 2010-03-30 |
EP1968797A2 (en) | 2008-09-17 |
TW200732163A (en) | 2007-09-01 |
BRPI0620293A2 (pt) | 2011-11-08 |
US7413289B2 (en) | 2008-08-19 |
US7784918B2 (en) | 2010-08-31 |
CA2631454A1 (en) | 2007-07-05 |
AU2006330919A1 (en) | 2007-07-05 |
WO2007076029A2 (en) | 2007-07-05 |
WO2007076029A3 (en) | 2008-04-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: FUNAI ELECTRIC CO., LTD. Free format text: FORMER OWNER: LEXMARK INTERNATIONAL, INC. Effective date: 20140103 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140103 Address after: Osaka Japan Patentee after: Funai Electric Co.,Ltd. Address before: American Kentucky Patentee before: Lexmark International, Inc. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110413 Termination date: 20211221 |