CN101329695B - Method for detecting and establishing MOS tube model applied to noise - Google Patents

Method for detecting and establishing MOS tube model applied to noise Download PDF

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CN101329695B
CN101329695B CN2007100424598A CN200710042459A CN101329695B CN 101329695 B CN101329695 B CN 101329695B CN 2007100424598 A CN2007100424598 A CN 2007100424598A CN 200710042459 A CN200710042459 A CN 200710042459A CN 101329695 B CN101329695 B CN 101329695B
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noise
oxide
metal
semiconductor
model
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CN101329695A (en
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黄俊诚
赵芳芳
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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    • G06F30/36—Circuit design at the analogue level
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Abstract

The invention discloses a method for building an MOS transistor model applied to noise, which comprises the following steps: noise of the MOS transistor on different grains is measured; a noise distribution chart is drawn, according to the obtained noise value of the MOS transistor; at least one variable quantity of a noise parameter of a document in an original noise model is added to the MOS transistor for noise simulation; if the result of the simulation can not cover the noise data in the noise distribution chart, the variable quantity of the noise parameter is continuously changed and noise simulation is carried out, till the result of the simulation can cover the noise data in the noise distribution chart; if the result of the simulation can cover the noise data in the noise distribution chart, the corresponding value of the variable quantity of the noise parameter is input to the document of the MOS transistor as the MOS transistor model applied to noise. The MOS transistor model applied to noise built by the method can simulate a real situation more accurately.

Description

Detect and set up the method for the metal-oxide-semiconductor model that is applied to noise
Technical field
The present invention relates to detect and set up the method for the metal-oxide-semiconductor model that is applied to noise.
Background technology
At present, the element in the circuit all may produce various noises.In order to study the rule of noise, normally study for a metal-oxide-semiconductor.Metal-oxide-semiconductor can be considered to a miniature circuit structure, comprises various resistance, electric capacity and active device.For metal-oxide-semiconductor, may comprise the thermonoise in grid, source electrode and the drain electrode, thermonoise in the raceway groove and 1/f noise, thermonoise on the substrate and the induced noise on the grid etc.Wherein in general 1/f noise is a kind of low-frequency noise, because its amplification and frequency amplification is inversely proportional to, so hence obtain one's name.1/f noise mainly influences the electron device that runs under the low frequency environments, but in some radio circuits, in frequency mixer, amplifier and frequency divider, 1/f noise is also increasing for the influence of circuit at high-frequency region, may cause consequences such as signal-to-noise ratio degradation.For circuit design and circuit analysis, have one accurately the model of analogue noise be very important.
Setting up the method for model now, briefly is the data by the analysis to measure gained, finds the rule of these data, for example is subjected to the variation of voltage or current affects, finds the equation that can describe this rule with mathematical method again.For example, International Standard Book Number is the circuit that the document of 0-471-49869-6 a piece " DeviceModeling for Analog and RF CMOS Circuit Design " by name has been mentioned a kind of metal-oxide-semiconductor noise model, be used as the main correlative factor of noise with some current parameters, for example, be used as the main correlative factor of 1/f noise in the metal-oxide-semiconductor raceway groove with the quadratic power of drain current, and constitute the Changing Pattern that equation is described 1/f noise by waiting in conjunction with the gate oxidation layer capacitance of some other for example frequency, unit area and channel length.And in circuit design and circuit analysis, generally be for example under the simulated environment of direct current, interchange, small-signal and transient analysis, to use for example HSPICE of some simulation softwards at some, simulate the noise of metal-oxide-semiconductor.The metal-oxide-semiconductor model that is applied to noise that these simulation softwards comprised is the metal-oxide-semiconductor library file that comprises the noise model file.And for noise simulation, the variable quantity of describing the described noise parameter of setting in the noise parameter that equation called of noise and the library file in the model file has determined the accuracy of noise simulation usually.Thereby in noise simulation, some noise parameters are to determine according to the metal-oxide-semiconductor that will simulate, for example above-mentioned channel length, and the variable quantity of the noise parameter that other is for example set in the library file all is some empirical values that debugging obtains according to actual measured value usually.At present, these empirical values mostly are to be based upon on the basis of a few measurement data, do not consider in the explained hereafter because various complicated factors, for example gate oxide growth situation, and the noisiness that causes between wafer, intergranule, and the difference between the different batches.Need utilize the metal-oxide-semiconductor noise model when circuit designer and carry out noise Simulation when coming Aided Design, the model that can not be identified for noise Simulation is enough accurately, and if used not enough precise analytic model and will influence designing quality.
Summary of the invention
The problem that the present invention solves is exactly that the existing metal-oxide-semiconductor model that is applied to noise is not considered noisiness difference and accurate inadequately.
The problem that the present invention also solves is exactly that can't to be identified for the model of noise Simulation when designing enough accurately.
For addressing the above problem, the present invention sets up the metal-oxide-semiconductor model that is applied to noise according to the following steps,
Measure the noise of the metal-oxide-semiconductor on the different crystal grain;
According to the noise data of resulting metal-oxide-semiconductor, set up noise profile figure;
At least the variable quantity that adds a noise parameter in the noise model file comes metal-oxide-semiconductor is carried out noise Simulation in the metal-oxide-semiconductor library file;
If simulation result can not cover the data among the noise profile figure, the value that then continue to change the variable quantity of noise parameter is carried out emulation can cover noise data among the noise profile figure up to simulation result;
If simulation result can cover the data among the noise profile figure, then the value with the variable quantity of corresponding noise parameter is updated in the metal-oxide-semiconductor library file as the metal-oxide-semiconductor model that is applied to noise.
For addressing the above problem, the present invention also provides the method for the metal-oxide-semiconductor model that a kind of detection is applied to noise, comprise the following steps,
Measure the noise of the metal-oxide-semiconductor on the different crystal grain;
According to the noise data of resulting metal-oxide-semiconductor, set up noise profile figure;
The metal-oxide-semiconductor library file that application comprises the noise model file carries out noise Simulation as metal-oxide-semiconductor noise Simulation model for metal-oxide-semiconductor;
If simulation result does not cover the noise data among the noise profile figure, then this metal-oxide-semiconductor model can not very accurately carry out noise Simulation;
If simulation result covers the noise data among the noise profile figure, then this metal-oxide-semiconductor model can very accurately carry out noise Simulation.
Compared with prior art, the present invention has the following advantages:
1. the present invention's method of setting up the metal-oxide-semiconductor model be applied to noise is a raw data with the noise figure of the metal-oxide-semiconductor on the different crystal grain of measuring, and sets up distribution plan and reflect that noise statistics distributes, and has considered the difference of noisiness.Be target with the data among the noise model simulation value covering noise profile figure of debugging again, so the model of setting up is more accurate more near truth.
2. the present invention's method of detecting the metal-oxide-semiconductor model be applied to noise is a raw data with the noise figure of the metal-oxide-semiconductor on the different crystal grain of measuring, and set up distribution plan and reflect that noise statistics distributes, considered the difference of noisiness, and, make detection method more objective and accurate with this standard as measurement noise model degree of accuracy.
Description of drawings
Fig. 1 is the method flow diagram that the present invention sets up the metal-oxide-semiconductor model that is applied to noise;
Fig. 2 is NMOS pipe 1/f noise and the frequency relation figure that the embodiment of the invention measures;
Fig. 3 is 4 1/f noises and the frequency relation figure of selecting among Fig. 2;
Fig. 4 is the data trend line chart of Fig. 3;
Fig. 5 is PMOS pipe 1/f noise and the frequency relation figure that the embodiment of the invention measures;
Fig. 6 is 4 1/f noises and the frequency relation figure of selecting among Fig. 5;
Fig. 7 is the data trend line chart of Fig. 6;
Fig. 8 is existing model emulation value and 1/f noise distribution comparison diagram;
Fig. 9 is embodiment of the invention model emulation value and 1/f noise distribution comparison diagram;
Figure 10 is the library file of embodiment of the invention metal-oxide-semiconductor model;
Figure 11 is the method flow diagram that the present invention detects the metal-oxide-semiconductor model that is applied to noise.
Embodiment
The method that the present invention sets up the metal-oxide-semiconductor model that is applied to noise is that the noise figure to measure is a raw data, and set up distribution plan and reflect that noise statistics distributes, be target with the data among the noise model simulation value covering noise profile figure of debugging again, and set up model on this basis.
The method that the present invention detects the metal-oxide-semiconductor model be applied to noise is a raw data with the noise figure of the metal-oxide-semiconductor on the different crystal grain of measuring, and set up distribution plan and reflect that noise statistics distributes, considered the difference of noisiness, and with this standard as measurement noise model degree of accuracy.
As said before, the noise of metal-oxide-semiconductor can be divided into many types, and it is clearer to make that below by the modeling procedure for a kind of noise the present invention sets up the method for noise model.
With reference to shown in Figure 1, the method that the present invention sets up the metal-oxide-semiconductor model that is applied to noise comprises the steps,
Step 1 is measured the noise of the metal-oxide-semiconductor on the different crystal grain.As a rule, the form of expression from noise is broadly divided into two classes, voltage noise and current noise.Therefore, the measurement noise is also started with from this two aspect often.Perhaps obtain the The noise size, perhaps obtain the The noise size by measuring noise current by measuring noise voltage.
Present embodiment is to describe in detail by the step that foundation is applied to the metal-oxide-semiconductor model of 1/f noise, so measurement point is to start with from the electrode of metal-oxide-semiconductor, and is to obtain the The noise size from measuring noise current.Therefore present embodiment is being chosen on the measurement point also with different in the past in order to reach the purpose that embodies noise profile.Present embodiment is selected metal-oxide-semiconductor on the different crystal grain of different wafers as the object of measuring, reason is because the deviation of production technology, even the metal-oxide-semiconductor on the different crystal grain on the same wafer, performance between them is difference to some extent also, say nothing of is on the different wafers, therefore the benefit of choosing metal-oxide-semiconductor like this is exactly the situation that can cover process deviation more fully, makes the data of measuring more can represent the discrete case of metal-oxide-semiconductor performance difference.
The step of the 1/f noise of present embodiment measurement metal-oxide-semiconductor is as follows, at first select on 20 crystal grain of different wafers, channel width is 10um, channel length is that the NMOS pipe of 0.13um is used metal-oxide-semiconductor for measuring, described 20 crystal grain can be respectively to choose 4 crystal grain from 5 wafers, also can be from 10 wafers, respectively to choose 2, as said before be in order to cover the situation of process deviation more fully.
Then, add certain bias voltage for the NMOS pipe that will measure.According to those skilled in the art's common practise, metal-oxide-semiconductor is under the different bias voltages, has different electricity performances, thereby noise also can be different along with the difference of bias voltage.For metal-oxide-semiconductor,, can be divided into three mode of operations: cut-off region, linear zone and saturation region according to the difference of bias voltage.With the NMOS pipe is example, and when the gate source voltage of NMOS pipe during less than the threshold voltage of NMOS pipe, the controlled area between NMOS pipe source electrode and the drain electrode is depleted, does not have carrier flow in the raceway groove, and the NMOS pipe ends.When the gate source voltage of NMOS pipe during greater than the threshold voltage of NMOS pipe, the mid-gap energy of NMOS tube-surface is lower than Fermi level, cause surface potential become on the occasion of and cause surperficial transoid.In case inversion layer has been set up on the surface, just formed the n type raceway groove that can conduct drain current between source electrode and the drain electrode.At this moment, when drain source voltage was zero, there was thermal equilibrium in the inversion channel district, and drain current is zero, and when drain source voltage greater than zero the time, the conducting region between source electrode and drain electrode just conducts the drain current that is proportional to drain source voltage.Raceway groove has formed continuous current path between source electrode and the drain electrode, and the NMOS pipe works in linear zone.But, begin to descend at the electric charge of drain terminal inversion layer and channel depth along with the increase of drain voltage.Finally, when drain source voltage equal leak-saturation voltage of source the time, the drain electrode inversion layer charge is kept to zero, is called pinch-off point.At this moment, adjacent drains forms the surface region exhaust, and along with the increase of drain voltage, this depletion region begins to extend to source electrode, and the NMOS pipe works in the saturation region.When the actual measurement noise, comprehensive for measurement data should be set different bias voltage environment respectively in linear zone and saturation region and measure.Present embodiment is example in order to make narration more succinct with regard to choosing a kind of bias voltage that makes metal-oxide-semiconductor be operated in the saturation region.Bias voltage is set as follows: make that gate source voltage is 1.5V, drain source voltage is 1.5V, base-source voltage is 0V, and under the frequency of 4Hz, the quadratic power of mentioning before adopting that utilizes drain current is used as the method for the main correlative factor of 1/f noise in the metal-oxide-semiconductor raceway groove, drain current fluctuation by the measuring N metal-oxide-semiconductor obtains the drain current noise power spectral density of this NMOS pipe, and (drain currentnoise power spectral density Sid) represents 1/f noise.
Subsequently, keep the bias voltage of identical NMOS pipe, by changing the 1/f noise that frequency obtains this NMOS pipe under the different frequency, frequency range is from 4Hz～100kHz.Next, change measured NMOS pipe, choose NMOS pipe on other crystal grain, keep and the identical bias voltage of above-mentioned NMOS pipe as measuring object, same in the frequency range of 4Hz～100kHz, obtain the 1/f noise of correspondence.And with the frequency is horizontal ordinate, is horizontal ordinate with the drain current noise power spectral density of NMOS pipe on 20 measured different crystal grain, obtains the graph of a relation of the 1/f noise of NMOS pipe with frequency change.Fig. 2 is exactly described graph of a relation.
Further, the channel width and the channel length of the quantity of the crystal grain of selecting in the above-mentioned measurement 1/f noise process and the metal-oxide-semiconductor of selecting can be selected suitable value according to the actual needs for use, for example, the crystal grain of selecting greater number will make that also measured data area is bigger, and the model of Jian Liing also can be more accurate comparatively speaking.Certainly, also can set the 1/f noise that other bias voltage environment come the measuring N metal-oxide-semiconductor, for example, make that gate source voltage is 0.8V, drain source voltage is 0.3V, and base-source voltage is 0V, comes the measuring N metal-oxide-semiconductor to be operated in the 1/f noise of linear zone; Make that gate source voltage is 1.2V, drain source voltage is 1.2V, and base-source voltage is 0V, comes the measuring N metal-oxide-semiconductor to be operated in the 1/f noise of saturation region.
Then, method with reference to above-mentioned measuring N metal-oxide-semiconductor 1/f noise, the PMOS pipe of selecting on 20 crystal grain on the different wafers is measuring object, choosing channel width is 10um, channel length is the PMOS pipe of 0.13um, add bias voltage for this PMOS pipe, make gate source voltage be-1.5V, drain source voltage is-1.5V, base-source voltage is 0V, the PMOS pipe is operated in the saturation region, and under the frequency of 4Hz, the drain current noise power spectral density Sid that obtains this PMOS pipe by the drain current fluctuation of measuring the PMOS pipe represents 1/f noise.
Subsequently, keep the bias voltage of identical PMOS pipe, by changing the 1/f noise that frequency obtains this PMOS pipe under the different frequency, frequency range is from 4Hz～100kHz.Next, change measured PMOS pipe, choose PMOS pipe on other crystal grain, keep and the identical bias voltage of above-mentioned PMOS pipe as measuring object, same in the frequency range of 4Hz～100kHz, obtain the 1/f noise of correspondence.And with the frequency is horizontal ordinate, is horizontal ordinate with the drain current noise power spectral density of PMOS pipe on 20 measured different crystal grain, obtains the graph of a relation of the 1/f noise of PMOS pipe with frequency change.Fig. 5 is described graph of a relation.
Certainly, in the 1/f noise of measuring the PMOS pipe, also can set the 1/f noise that other bias voltage environment are measured the PMOS pipe, for example, make gate source voltage be-0.8V, drain source voltage is-0.3V, base-source voltage is 0V, measures the 1/f noise of PMOS plumber work at linear zone; Make gate source voltage be-1.2V, drain source voltage is-1.2V that base-source voltage is 0V, measures the 1/f noise that the PMOS pipe is operated in the saturation region.
Step 2 according to the noise figure of resulting metal-oxide-semiconductor, is set up noise profile figure.In the present embodiment, according to the measuring process of step 1, the 1/f noise that has obtained 20 NMOS pipes respectively is with the 1/f noise of the relation curve of frequency change and 20 the PMOS pipes relation curve with frequency change.For situation that Fig. 2 and Fig. 5 are reflected is more clear, 4 curves of picked at random from Fig. 2 and Fig. 5 obtain as Fig. 3 and curve map shown in Figure 6 respectively, and the curve among these two figure is extracted Trendline, obtain Fig. 4 and Fig. 7.And can see in conjunction with Fig. 2, Fig. 3, Fig. 4 each NMOS pipe relation curve slope much at one, can see in conjunction with Fig. 5, Fig. 6, Fig. 7, the slope of the relation curve of each PMOS pipe also much at one, slope is then being represented the susceptibility of the 1/f noise of NMOS pipe or PMOS pipe to frequency, and this 1/f noise that NMOS pipe on each different crystal grain or PMOS pipe have been described is roughly the same to the susceptibility of frequency.Yet the data point among Fig. 2, Fig. 3, Fig. 4 on each NMOS pipe relation curve with respect to the distance of x axle difference is but arranged, data point among Fig. 5, Fig. 6, Fig. 7 on each PMOS pipe relation curve with respect to the distance of x axle difference is also arranged, then represented the size on some frequencies of 1/f noise with respect to the distance of x axle, thereby reflected that also the front is said owing to process deviation, the size of each NMOS pipe or the 1/f noise of PMOS pipe on some frequencies is not quite similar.Therefore, just need be reflected in these noises on the figure with the situation that the difference of each NMOS pipe or PMOS pipe changes now, wherein the most clearly method is exactly selected frequency, then the NMOS pipe corresponding on this frequency and the 1/f noise of PMOS pipe are selected out, set up a distribution plan.Because it is as before said, the 1/f noise of each NMOS pipe to the susceptibility of frequency much at one among Fig. 2, Fig. 3, Fig. 4, among Fig. 5, Fig. 6, Fig. 7 the 1/f noise of each PMOS pipe to the susceptibility of frequency much at one, therefore also can think each NMOS pipe or PMOS pipe the relative situation of change of 1/f noise on different frequency much at one.
In the present embodiment, selecting frequency is the NMOS pipe of correspondence under the 10kHz frequency and the 1/f noise of PMOS pipe, and with the 1/f noise of NMOS pipe under the 10kHz frequency is horizontal ordinate, is the 1/f noise distribution plan that ordinate is set up metal-oxide-semiconductor under the 10kHz frequency with the PMOS pipe at the 1/f noise under the 10kHz frequency, and the 1/f noise distribution plan of setting up according to this method as shown in Figure 8.Certainly, 1/f noise that also can the PMOS pipe is a horizontal ordinate, is ordinate with the 1/f noise of NMOS pipe, and this does not influence the distribution situation of 1/f noise.Then, carry out emulation with existing model, BSIM3 model for example, obtain the 1/f noise under the limiting case of four metal-oxide-semiconductors, the limiting case of these four metal-oxide-semiconductors is respectively the fast PMOS of the fast NMOS of FF-, the slow PMOS of the slow NMOS of SS-, the slow PMOS of the fast NMOS of FNSP-, the fast PMOS of the slow NMOS of SNFP-, and mark the variation range of a 1/f noise according to the 1/f noise under the limiting case of these four metal-oxide-semiconductors, as shown in Figure 4.But as can see from Figure 8, at the 1/f noise of the NMOS that measures under 10kHz frequency pipe and PMOS pipe major part being arranged is outside the variation range in the limiting case delimitation of four metal-oxide-semiconductors of existing BSIM3 model, therefore, existing BSIM3 model can not cover the data of noise profile figure, so accurate inadequately.
Step 3, the variable quantity that adds a noise parameter in the noise model file at least comes metal-oxide-semiconductor is carried out noise Simulation in the metal-oxide-semiconductor library file.Analyzing the reason that used BSIM3 model in the present embodiment can not cover the data of noise profile figure is that the value that noise parameter is set in the model file is not accurate enough, therefore can cover the data of noise profile figure for the variation range that makes the limiting case of four metal-oxide-semiconductors delimit, just need set for the variable quantity of the noise parameter in the metal-oxide-semiconductor library file.Because 1/f noise manufacturing process common and oxide layer has certain relation, therefore can be by adjusting the purpose that the correlation parameter of describing oxide layer reach covering.For example, for the BSIM3 model, can obtain by the noise relationship formula of analyzing in the noise model file, the parameter relevant with 1/f noise has noia, noib, noic, em and ef.Therefrom choose noib and em, in library file, add the variable quantity of noib and em,, carry out noise Simulation then for the variable quantity initialize of noib and em, be equally as in the step 2, purpose be emulation obtain four metal-oxide-semiconductors limiting case FF, SS, FNSP and SNFP under 1/f noise.Because the distribution plan of the 1/f noise of present income is under the frequency of 10kHz, the frequency of therefore carrying out noise Simulation also is set in 10kHz.
Step 4 judges that can simulation result cover the noise data among the noise profile figure.With the 1/f noise under limiting case FF, SS, FNSP and the SNFP of following four metal-oxide-semiconductors of the frequency of resulting 10kHz in the step 3 as four summits, mark the variation range of 1/f noise under the frequency of 10kHz, and with it with the 10kHz frequency of measuring gained under the 1/f noise distribution plan of metal-oxide-semiconductor make comparisons, can variation range that see simulation result cover the data among the noise profile figure that measures gained.
Step 5, if simulation result does not cover the data among the noise profile figure, the value that then continue to change the variable quantity of noise parameter is carried out emulation can cover data among the noise profile figure up to simulation result.For present embodiment, if can not cover the data of the 1/f noise distribution plan of metal-oxide-semiconductor under the 10kHz frequency of measuring gained in the scope that the 1/f noise under limiting case FF, SS, FNSP and the SNFP of four metal-oxide-semiconductors that emulation under the frequency of 10kHz obtains is divided before, then reset the value of the variable quantity of noib and em in the library file, proceed emulation.For example, the values of setting several noib and em obtain simulation value under the FF and observe simulation value under the FF according to the mobile trend on the noise profile figure that do not coexist of the value of noib and em more, can make FF towards helping covering noib that the measurement data direction moves and the value of em thereby find.Similarly, adopt similar method to obtain the value of corresponding noib and em for SS, FNSP and SNFP.
Step 6, if simulation result can cover the data among the noise profile figure, then the value with corresponding noise varience is updated in the metal-oxide-semiconductor library file as the metal-oxide-semiconductor model that is applied to noise.Situation as shown in Figure 9 is exactly that simulation result can cover data conditions among the noise profile figure, as can see from Figure 9, the 1/f noise distributed data of the PMOS under 10kHz pipe and NMOS pipe fully the 1/f noise under limiting case FF, SS, FNSP and the SNFP of four metal-oxide-semiconductors of model emulation be in the quadrilateral of summit composition.Therefore, the noise parameter noib of this moment and the value of the variable quantity of em can be updated in the BSIM3 model.And this moment the BSIM3 model library file as shown in figure 10, DNOIB_N12 and DEM_N12 are exactly the noib that adds in library file and the variable quantity of em in the library file.FF, SS, FNSP, SNFP are exactly the limiting case of described four metal-oxide-semiconductors.
Since among the said Fig. 2 in front and Fig. 3 the 1/f noise of each metal-oxide-semiconductor to the susceptibility of frequency much at one, therefore also can think each metal-oxide-semiconductor the relative situation of change of 1/f noise on different frequency much at one.So, also this model can be generalized to the situation that is applicable to each frequency.
Can see that by the above embodiments the variation range that two noise parameter noib by adding the BSIM3 model and the variable quantity of em make metal-oxide-semiconductor noise Simulation result constitute can cover the data among the noise profile figure.Certainly, the method that reaches this purpose does not have only a kind of, as said before, when measuring different bias voltages just can be set measures for noise, when setting up distribution plan, also can choose the data under more different frequencies, and the variable quantity of the noise parameter that can change also is not limited to two of noib and em when emulation.And the method that present embodiment adopted also not only is applicable to the BSIM3 model, because as said before, for noise model, all is some equations that comprise the description noisiness of parameter.Therefore, the method for present embodiment is fit to other noise models such as SPICE2 and BSIM4 equally.Based on above analysis, the method that present embodiment adopts can also expand to the noise for other types, for example in the modeling of thermonoise.
In addition, when Aided Design is carried out in using noise emulation, select for use one accurately the model of simulator and noise also be important for the quality of designing quality, if therefore have one can the detection noise model method detect for noise model and will help design.The present invention detects method such as Figure 11 of the metal-oxide-semiconductor model that is applied to noise, comprises,
Step 21 is measured the noise of the metal-oxide-semiconductor on the different crystal grain.As previously mentioned, because the deviation of production technology, even the metal-oxide-semiconductor on the different crystal grain on the same wafer, performance between them is difference to some extent also, say nothing of is on the different wafers, therefore the benefit of choosing metal-oxide-semiconductor like this is exactly the situation that can cover process deviation more fully, makes the data of measuring more can represent the discrete case of metal-oxide-semiconductor performance difference.Therefore, this step is to measure the NMOS pipe on the different crystal grain and the noise of PMOS pipe in fact.Because the kind of noise is a lot, and its oneself measuring method is all arranged for each noise, these all well known to a person skilled in the art, for example the 1/f noise of NMOS pipe just can be by doing in linear zone or saturation region the NMOS plumber, in the frequency range of 4Hz～100kHz, the drain current of measuring N metal-oxide-semiconductor fluctuates, and (drain current noise power spectral density Sid) represents 1/f noise to the drain current noise power spectral density that obtains this NMOS pipe.
Step 22 according to the noise data of resulting metal-oxide-semiconductor, is set up noise profile figure.Method that this step is set up noise profile figure is an ordinate with the noise data of measured PMOS pipe as described above, is horizontal ordinate with the noise data of measured NMOS pipe, sets up the noise profile figure of metal-oxide-semiconductor.Certainly, noise data that also can the PMOS pipe is a horizontal ordinate, is ordinate with the noise data of NMOS pipe, and this does not influence the distribution situation of noise.
Step 23 is carried out noise Simulation as metal-oxide-semiconductor noise Simulation model for metal-oxide-semiconductor with the metal-oxide-semiconductor library file that comprises the noise model file.This step adopts those skilled in the art's common practise, measures under the condition of noise in step 21 with the existing metal-oxide-semiconductor library file that comprises the noise model file, carries out emulation for MOS, obtains the noise Simulation data of this metal-oxide-semiconductor., generally be the metal-oxide-semiconductor noise under the fast PMOS of the fast NMOS of emulation FF-, the slow PMOS of the slow NMOS of SS-, the slow PMOS of the fast NMOS of FNSP-, these four kinds of limiting cases of the fast PMOS of the slow NMOS of SNFP-wherein in order to make the efficient of emulation higher.
Step 24 judges that can simulation result cover the noise data among the noise profile figure.With the noise data under limiting case FF, SS, FNSP and the SNFP of resulting four metal-oxide-semiconductors in the step 23 as four summits, mark the variation range of noise, and it is made comparisons with the noise profile figure that measures gained, can variation range that see simulation result cover the data among the noise profile figure that measures gained.
Step 25, if simulation result does not cover the noise data among the noise profile figure, then this metal-oxide-semiconductor model can not very accurately carry out noise Simulation.Can with the noise Simulation data under the resulting four kinds of limiting cases of step 23 be that the summit obtains a quadrilateral, see the noise data that cover among the noise profile figure.If do not cover the noise data among the noise profile figure, illustrate that the simulation value of noise model can not be included measured noise data, so the noise model out of true.
Step 26, if simulation result covers the noise data among the noise profile figure, then this metal-oxide-semiconductor model can very accurately carry out noise Simulation.If simulation result covers the noise data among the noise profile figure, illustrate that the simulation value of noise model can be included measured noise data, just can contain the variation of noisiness, so noise model is enough accurate.
In sum, the method that the present invention sets up the metal-oxide-semiconductor model that is applied to noise is a raw data with the noise figure of measuring, and set up distribution plan and reflect that noise statistics distributes, considered the difference of noisiness, be target with the noise data among the model emulation value covering noise profile figure of debugging again, so the model of setting up is more accurate more near truth.The method that the present invention detects the metal-oxide-semiconductor model be applied to noise is a raw data with the noise figure of the metal-oxide-semiconductor on the different crystal grain of measuring, and set up distribution plan and reflect that noise statistics distributes, considered the difference of noisiness, and, make detection method more objective and accurate with this standard as measurement noise model degree of accuracy.

Claims (10)

1. a foundation is applied to the method for the metal-oxide-semiconductor model of noise, it is characterized in that, comprise the following steps,
Measure the 1/f noise of the metal-oxide-semiconductor on the different crystal grain;
According to the 1/f noise data of resulting metal-oxide-semiconductor, set up noise profile figure;
At least the variable quantity that adds parameter relevant with the noise of 1/f in the noise model file comes metal-oxide-semiconductor is carried out noise Simulation in the metal-oxide-semiconductor library file;
If simulation result does not cover the noise data among the noise profile figure, the value that then continue to change this variable quantity is carried out emulation can cover noise data among the noise profile figure up to simulation result;
If simulation result covers the data among the noise profile figure, then the value with corresponding variable quantity is updated in the metal-oxide-semiconductor library file as the metal-oxide-semiconductor model that is applied to noise;
Described noise profile figure is under a selected frequency, is horizontal ordinate with the 1/f noise of NMOS pipe, be ordinate or be horizontal ordinate with the 1/f noise of PMOS pipe with the 1/f noise of PMOS pipe, and be that ordinate is set up with the 1/f noise of NMOS pipe;
Described simulation result is the variation range that marks as four summits with the 1/f noise under limiting case FF, SS, FNSP and the SNFP of four metal-oxide-semiconductors under the selected frequency.
2. the method for setting up noise model as claimed in claim 1 is characterized in that, described 1/f noise is never with recording on pipe of the PMOS on the different crystal grain of wafer or the NMOS pipe.
3. the method for setting up noise model as claimed in claim 1 or 2 is characterized in that, the frequency range of measuring PMOS pipe or NMOS pipe 1/f noise is 4Hz～100kHz.
4. the method for setting up noise model as claimed in claim 3 is characterized in that, the 1/f noise of PMOS pipe or NMOS pipe is measured under linear zone or saturation region.
5. the method for setting up noise model as claimed in claim 4, it is characterized in that the drain current noise power spectral density that obtains described PMOS pipe or NMOS pipe by the drain current fluctuation of measuring PMOS pipe or NMOS pipe represents that PMOS manages or the 1/f noise of NMOS pipe.
6. a detection is applied to the method for the metal-oxide-semiconductor model of noise, it is characterized in that, comprise the following steps,
Measure the 1/f noise of the metal-oxide-semiconductor on the different crystal grain;
According to the 1/f noise data of resulting metal-oxide-semiconductor, set up noise profile figure;
The metal-oxide-semiconductor library file that application comprises the noise model file carries out noise Simulation as metal-oxide-semiconductor noise Simulation model for metal-oxide-semiconductor;
If simulation result does not cover the noise data among the noise profile figure, then this metal-oxide-semiconductor model can not very accurately carry out noise Simulation;
If simulation result covers the noise data among the noise profile figure, then this metal-oxide-semiconductor model can very accurately carry out noise Simulation;
Described noise profile figure is under a selected frequency, is horizontal ordinate with the 1/f noise of NMOS pipe, be ordinate or be horizontal ordinate with the 1/f noise of PMOS pipe with the 1/f noise of PMOS pipe, and be that ordinate is set up with the 1/f noise of NMOS pipe;
Described simulation result is the variation range that marks as four summits with the 1/f noise under limiting case FF, SS, FNSP and the SNFP of four metal-oxide-semiconductors under the selected frequency.
7. the detection of stating as claim 6 is applied to the method for the metal-oxide-semiconductor model of noise, it is characterized in that, described 1/f noise is never with recording on pipe of the PMOS on the different crystal grain of wafer or the NMOS pipe.
8. the detection of stating as claim 5 or 6 is applied to the method for the metal-oxide-semiconductor model of noise, it is characterized in that, the frequency range of measuring PMOS pipe or NMOS pipe 1/f noise is 4Hz～100kHz.
9. detection as claimed in claim 8 is applied to the method for the metal-oxide-semiconductor model of noise, it is characterized in that, the 1/f noise of PMOS pipe or NMOS pipe is measured under linear zone or saturation region.
10. detection as claimed in claim 9 is applied to the method for the metal-oxide-semiconductor model of noise, it is characterized in that the drain current noise power spectral density that obtains described PMOS pipe or NMOS pipe by the drain current fluctuation of measuring PMOS pipe or NMOS pipe represents that PMOS manages or the 1/f noise of NMOS pipe.
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