CN114117987A - Modeling method of global process angle model - Google Patents
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Abstract
The invention discloses a modeling method of a global process angle model, which comprises the following steps: step S1, modeling the total process angle according to the design requirement to obtain a plurality of total process angle model parameters and values thereof; step S2, designing a global process angle model coefficient related to the size, multiplying the global process angle model coefficient by each total process angle model parameter value, and taking the multiplied parameter as the global process angle model parameter value; in step S3, parameters in the global process angle model coefficients are adjusted to fit the global process angle model such that the global process angle model meets the target value.
Description
Technical Field
The invention relates to the technical field of semiconductor integrated circuits, in particular to a modeling method of a global process angle model.
Background
According to the classical literature, the mismatch of MOS devices is a phenomenon in certain manufacturing process flows that causes random fluctuations in the physical quantity of the same MOS device that do not change over time. The final design accuracy and yield of the circuit are determined by the mismatch degree of the devices under a specific process. A circuit designer needs an accurate MOSFET mismatch model to constrain circuit optimization design, and a layout designer needs a corresponding design rule to reduce chip mismatch. Especially, after the size of the CMOS process device enters the deep submicron range, the mismatch of the device becomes more serious along with the reduction of the size, and the performance of the radio frequency/analog integrated circuit is restricted. Of course, the digital circuit does not completely take into account the effects of device mismatch, and in large scale memory designs, the effects of transistor mismatch on the sub-memory cell clock signals must be considered.
Local mismatch and global mismatch: local mismatch can be simply understood as parameter mismatch between devices in a local area; and global mismatch is a mismatch due to parameter variations (e.g., temperature, doping concentration) across the silicon wafer.
The current classical method of calculating total mismatch is that the square of the global mismatch plus the square of the local mismatch equals the square of the total mismatch. Written as the formula:
wherein, total represents the total process angle model value, global represents the global process angle model value, local represents the local mismatch model value, and Sigma represents the standard deviation. Therefore, after modeling the overall process angle model and the local mismatch model, modeling the global process angle model is also needed.
In practice, the local mismatch is obtained by testing data through a special test structure, the total mismatch is determined by data of a large number of wafers, and the target of the global mismatch is calculated through the classical formula.
There are several methods of modeling the global process angle model in general. One method is to calculate the target to be achieved by the global process angle model under the setting of the classical square law by using the test data of the local mismatch test structure and the value of the total process angle model which is prepared in advance. With the goal, a global process angle model is obtained by adjusting parameters of the global process angle model by using a method of adjusting the total process angle model.
The method has the defects that the model adjusting process is complicated, and after the total process angle model is adjusted, the global process angle model needs to be adjusted again through a similar method and a similar flow.
The second method is a relatively rough method, called fixed coefficient method, and directly sets a number between 0 and 1 as the global process angle model coefficient, for example, sets 0.75 as the global process angle model coefficient. This method is extremely simple but has the drawback that, since the local mismatch varies with size, the global process angle model is also a function of size for different sizes, and it is not possible that all sizes are fixed coefficients. As a result, the global process corner model may deviate significantly from the calculations of the classical equation for MOS devices of certain corner dimensions.
The Chinese patent application with publication number CN 108133102A discloses a modeling technique of a global process angle model, which uses a calculation formula of directly subtracting parameters of a total process angle model from parameters of a local mismatch model, namely Sigmatotal＝Sigmaglobal+Sigmalocal。
It simplifies the square law and becomes a direct simple addition relation. Because the default total process angle model is derived from 3 standard deviations of the test data and the local mismatch model is derived from 1 standard deviation of the test data, the patent multiplies the local mismatch model angle parameter by 3 to match the 3 standard deviations of the total process angle model.
The formula of the patent application is simple, so that the parameter expression of the global process angle model can be directly obtained through a simple addition formula, and the global process angle model obtained by the method has a correct trend of changing along with the size change and has a correct physical meaning due to the addition of local mismatch model parameters related to the size. However, the greatest defect of the patent application is that on the calculation formula of simple addition, although the calculation formula has correct physical significance, the obtained global process angle model has a small error with the target value of the global process angle model calculated by the classical square law. The root of this error is the difference between the simple-addition formula and the classical-square-law-addition formula.
The chinese patent application publication No. CN 111783296 a also discloses a modeling technique for a global process angle model, which is similar to the chinese patent application publication No. CN 108133102A, and which adopts a global mismatch formula without simplifying the square law, utilizes several parameters that have been selected as local mismatch model parameters, and uses a square law formula in which the total process angle model parameters and the local mismatch model parameters participate, that is, the total process angle model parameters and the local mismatch model parameters
The formula of the patent application is not complicated, so that the parameter expression of the global process angle model can be obtained through a square law addition formula, and the global process angle model obtained by the method also has a correct trend of changing along with the size change and has a correct physical meaning due to the addition of local mismatch model parameters related to the size. However, the global process angle model made by the method of the patent application sometimes has a deviation, and the root of the deviation is that the individual parameters (such as VTH0 or U0) in the electrical characteristic model are used to directly calculate the global process angle model value of the corresponding electrical characteristic model by using a square law, rather than directly calculating the square law relation of the global mismatch of the electrical characteristic model.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a modeling method of a global process angle model, so as to realize the modeling method of the global process angle model which is very accurate and simple to operate.
In order to achieve the above and other objects, the present invention provides a modeling method of a global process corner model, comprising the steps of:
step S1, modeling a total process angle according to design requirements to obtain a plurality of total process angle model parameters;
step S2, designing a global process angle model coefficient related to the size, multiplying the global process angle model coefficient by each total process angle model parameter value, and taking the multiplied parameter as the global process angle model parameter value;
in step S3, parameters in the global process angle model coefficients are adjusted to fit the global process angle model such that the global process angle model can meet the target value.
Preferably, in step S2, a size-dependent global process angle model coefficient expression is designed.
Preferably, the size-dependent global process angle model coefficient expression is as follows:
wherein global is a large-scale parameter, lglobal is a short-channel parameter, wglobal is a narrow-channel parameter, pglobal is a small-scale parameter, Lef is an effective channel length, and wef is an effective channel width.
Preferably, when lef and wef are both large, the last three terms of the global process angle model coefficient expression are ignored, and global in the global process angle model coefficient expression plays a main role in adjusting the global process angle parameter of the large-size device in the global process angle model.
Preferably, when lef is small and wef is large, the last two terms of the global process angle model coefficient expression are ignored, and the global process angle model coefficient expression is mainly adjusted by lglobal and is used for adjusting global process angle parameters of the short-channel device in the global process angle model.
Preferably, when the lef is larger and wef is smaller, the second and fourth terms of the global process angle model coefficient expression are ignored, and the global process angle model coefficient expression is mainly adjusted by wglobal and is used for adjusting the global process angle parameter of the narrow channel device in the global process angle model.
Preferably, when lef and wef are both small, the global process angle model coefficient expression is mainly adjusted by pglobal, and is used for adjusting the global process angle parameter of the small-size device in the global process angle model.
Compared with the prior art, the modeling method of the global process angle model has the advantages that an expression related to the size is used as the global process angle model coefficient, the global process angle model coefficient is multiplied by each total process angle model parameter value, the multiplied parameters are used as the global process angle model parameter values, and finally the parameters in the global process angle model coefficient are adjusted to fit the global process angle model so that the global process angle model meets the target value, so that the modeling method of the global process angle model is very accurate and is simple to operate.
Drawings
FIG. 1 is a flow chart of the steps of a modeling method of a global process angle model according to the present invention.
Detailed Description
Other advantages and capabilities of the present invention will be readily apparent to those skilled in the art from the present disclosure by describing the embodiments of the present invention with specific embodiments thereof in conjunction with the accompanying drawings. The invention is capable of other and different embodiments and its several details are capable of modification in various other respects, all without departing from the spirit and scope of the present invention.
The mobility model and threshold voltage model in the BSIM4 compact model are as follows:
wherein μ eff is an effective mobility μ 0(T, L) which is a low field mobility parameter at an operating temperature T, μ 0 which is a low field mobility which is an expression including U0, the temperature T and a channel length L, and U0 which is a low field mobility parameter at room temperature 300K. UA and UB are gate voltage dependent parameters in the effective mobility model, UC is body bias voltage dependent parameter in the effective mobility model, UD is coulomb scattering dependent parameter in the effective mobility model, and VbseffFor an effective source-substrate voltage parameter, EeffFor effective average electric field, Vth is the threshold voltage, TOXE is the equivalent electrical gate oxide thickness parameter, VgsteffIs an effective overdrive voltage parameter.
Wherein VTH0 is threshold voltage parameter of long channel device, K1 is first order bulk bias coefficient of threshold voltage model, K2 is second order bulk bias coefficient of threshold voltage model of vertical direction doping non-uniformity effect, K1oxFirst order bulk bias coefficient, K2, for a gate oxide thickness dependent threshold voltage modeloxThe second order bulk bias coefficient of the threshold voltage model of the gate oxide thickness dependent vertical direction doping nonuniformity effect, LPE0 is the parameter of the reverse short channel effect caused by pocket injection of the threshold voltage, LPEB is the parameter of the reverse short channel effect caused by pocket injection of the threshold voltage influenced by the bulk bias,
for surface potential, K3 is the narrow channel effect parameter of threshold voltage, K3B is the parameter of threshold voltage in which the narrow channel effect is affected by body bias, VbseffFor effective source-substrate voltage parameters, DVT0W is the narrow channel and short channel effect parameters for threshold voltage, DVT1W is the narrow channel and short channel effect dependent parameters for threshold voltage,/C0Critical dimension for threshold voltage leakage induced barrier lowering effect, lC1Critical dimension for roll-off effect of threshold voltage,/CWCritical dimension of narrow channel effect for threshold voltage, VbiFor the built-in potential of the diode, DSUB is a channel length dependent parameter of the threshold voltage leakage barrier lowering effect, ETA0 is a source drain voltage dependent parameter of the threshold voltage leakage barrier lowering effect, ETAB is a body bias dependent parameter of the threshold voltage leakage barrier lowering effect, n is the electron concentration, K isBThe temperature coefficient is a Boltzman constant, T is a Kelvin temperature value of an operating temperature Temp, q is an electron electric quantity, DVTP0 is a channel length dependent parameter of a drain induced threshold voltage drift, DVTP1 is a source drain voltage dependent parameter of the drain induced threshold voltage drift, KT1 is a temperature dependent coefficient of a threshold voltage model, KT1L is a channel length dependent parameter of the threshold voltage dependent model, KT2 is a body bias voltage dependent parameter of the threshold voltage temperature model, Temp is an operating temperature, and TNOM is a standard temperature.
It can be seen that U0 (low field mobility parameter) and UB (gate voltage dependent parameter in the effective mobility model) are one parameter in the effective mobility μ eff expression, and VTH0 (long channel device threshold voltage) is one parameter in the threshold voltage VTH model expression.
The modeling method of the process angle model in the SPICE model, generally speaking, the total process angle model, selects some main parameters, and adds a variable quantity to the main parameters to simulate the deviation of the electrical characteristics of the device relative to the typical situation. For example, the long channel device threshold voltage VTH0 parameter of the BSIM4 model in the MOS device is a parameter in the threshold voltage VTH expression.
To model the process corner model, it is written as follows:
VTH0＝‘0.5+DVTH0’
in the formula, DVTH0 is a deviation from a typical case (0.5).
Of course, other parameters besides VTH0 are selected to perform the same operation, such as low field mobility U0.
FIG. 1 is a flow chart of the steps of a modeling method of a global process angle model according to the present invention. As shown in fig. 1, the modeling method of the global process angle model of the present invention includes the following steps:
and step S1, modeling the total process angle according to the design requirement to obtain a plurality of total process angle model parameters.
In the embodiment of the invention, the modeling of the Total process angle model can be performed by adopting the existing method in the industry according to the design requirement, and after the modeling of the Total process angle is completed, the DVTH0 value DVTH0_ Total of the Total process angle model and the values of other Total process angle parameters are obtained.
And step S2, designing a global process angle model coefficient related to the size, multiplying the global process angle model coefficient by each total process angle model parameter value, and taking the multiplied parameter as the global process angle model parameter value.
In the specific embodiment of the invention, a size-related global process angle model coefficient expression is designed, and the expression is as follows:
wherein global is a large size parameter, lglobal is a short channel parameter, wglobal is a narrow channel parameter, pglobal is a small size parameter, lef is an effective channel length in micrometers (μm), wef is an effective channel width in micrometers (μm).
When lef and wef are both large (e.g., 5-10 times larger than the minimum line width), the last three terms of expression (3) can be ignored, and the large-size parameter global in expression (3) plays a major role, and it mainly adjusts the global process angle parameter of the large-size device in the global process angle model, or adjusts the global process angle parameters of all devices as a whole.
When lef is small (for example, less than 5 times of the minimum line width), and wef is large (for example, greater than 5-10 times of the minimum line width), the last two terms of the expression (3) can be ignored, and the expression (3) is mainly adjusted by the short-channel parameter lglobal, which is mainly used for adjusting the global process angle parameter of the short-channel device in the global process angle model.
When the lef is relatively large (for example, greater than 5-10 times of the minimum line width), and wef is very small (for example, less than 5 times of the minimum line width), the second and fourth terms of the expression (3) can be ignored, and the expression (3) is mainly adjusted by the narrow-channel parameter wglobal, which is mainly used for adjusting the global process angle parameter of the narrow-channel device in the global process angle model.
When lef and wef are both very small (e.g., less than 5 times the minimum line width), the expression (3) is mainly adjusted by the small-size parameter pglobal, which mainly adjusts the global process corner parameter of the small-size device in the global process corner model.
Thus, only 4 parameters of global, lglobal, wglobal and pglobal are needed to be adjusted finally, so that the global process angle model parameters of large-size, short-channel, narrow-channel and small-size devices can be adjusted in a targeted manner, and the final global process angle model reaches a target value or approaches the target value.
In step S3, parameters in the global process angle model coefficients are adjusted to fit the global process angle model such that the global process angle model can meet the target value.
Specifically, the coefficient Gpara obtained in step S2 is multiplied after each total process angle parameter, for example, for the parameter VTH0, the Global process angle value DVTH0_ Global is:
DVTH0_Global＝’DVTH0_Total*Gpara’
wherein, DVTH0_ Total is the value of DVTH0 after the modeling of the Total process angle model in step S1 is completed.
Similarly, for other total process angle model parameter values, the global process angle model coefficient Gpara is multiplied, and then the final product is taken as the corresponding global process angle model parameter value
Examples
The following examples of how the global process angle model is modeled and the sub-circuit model is modeled are illustrated by the examples:
.LIB FFG_ULVT
(Global process corner FFG model, FFG is Fast NMOS Fast PMOS Global, meaning of Fast NMOS Fast PMOS Global process corner)
.PARAM
(FFG global process angle model parameter list and value, where the global process angle model parameters all take the corresponding total process angle model parameter value)
+GL_DTOXE_NULVT12＝-4.0E-11 GL_DXL_NULVT12＝-2.0E-10 GL_DXW_NULVT12＝1.0E-10
+GL_DCJS_NULVT12＝-0.05 GL_DCJSWS_NULVT12＝-0.05
...
ENDL FFG _ ULVT $ (end global process corner model)
.SUBCKT PULVT12 D G S B W＝1E-6 L＝1E-6 SA＝0 SB＝0 SD＝0 AS＝0 AD＝0PS＝0 PD＝0NRD＝0 NRS＝0 SCA＝0 SCB＝0SCC＝0 NF＝1 MULTI＝1 MISMOD＝0GLOBAL_FLAG＝0 FLAG_CPC＝1
'xi' (subcircuit model MOS device name and parameter declaration)
.PARAM
+LEF＝‘L'
+WEF＝‘W/NF’
+GL_RATIO_PULVT12_HV＝‘GLOBAL+LGLOBAL/(LEF*1E6)+WGLOBAL/(WEF*1E6)+PGLOBAL/(LEF*WEF*1E12)'
(Global Process corner coefficient definition, equivalent to Gpara)
+GLOBAL＝0.997
Value of angle coefficient of the whole process (big size)
+LGLOBAL＝0
'xi' (short channel global process angle coefficient parameter value)
+WGLOBAL＝0
'Qi' (narrow channel global process angle coefficient parameter value)
+PGLOBAL＝-0.0005
'xi' (Small size global process angle coefficient parameter value)
+DTOXE_PULVT12_HV＝‘TL_DTOXE_PULVT12_HV*(1-GLOBAL_FLAG)*(1-MC_FLAG)+GL_DTOXE_PULVT12_HV*GLOBAL_FLAG*GL_RATIO_PULVT12_HV+MC_DTOXE_PULVT12_HV*MC_FLAG*G2'
(the second term of the formula is the multiplication of the GLOBAL process angle model parameter value by the GLOBAL process angle coefficient, the formula is a process angle model parameter framework and contains the total process angle model parameter, the GLOBAL process angle model parameter and the Monte Carlo process angle model parameter, as mentioned above, the value of GL _ DTOXE _ PULVT12_ HV is the same as the value of TL _ DTOXE _ PULVT12_ HV, GLOBAL _ FLAG is the GLOBAL process angle identifier, 1 is open, 0 is closed, MC _ FLAG is the Monte Carlo model identifier, 1 is open, 0 is closed, G2 is the Monte Carlo coefficient)
+DXL_PULVT12_HV＝‘TL_DXL_PULVT12_HV*(1-GLOBAL_FLAG)*(1-MC_FLAG)+GL_DXL_PULVT12_HV*GLOBAL_FLAG*GL_RATIO_PULVT12_HV+MC_DXL_PULVT12_HV*MC_FLAG*G2'
(the second term in the formula is the multiplication of the GLOBAL process angle model parameter value by the GLOBAL process angle coefficient, the formula is a process angle model parameter framework and contains the total process angle model parameter, the GLOBAL process angle model parameter and the Monte Carlo process angle model parameter, as mentioned above, the value of GL _ DXL _ PULVT12_ HV is the same as the value of TL _ DXL _ PULVT12_ HV, GLOBAL _ FLAG is the GLOBAL process angle identifier, 1 is open, 0 is closed, MC _ FLAG is the Monte Carlo model identifier, 1 is open, 0 is closed, G2 is the Monte Carlo coefficient)
...
Ends PULVT12$ (end subcircuit model)
The following table 1 shows the comparison result of the global process angle model called by the method for constructing the global process angle coefficient according to the present invention with the target value of the classical formula:
TABLE 1 comparison of the Global Process Angle model of the present invention with the target value calculated by the classical equation
The invention has better precision, and can well accord with the calculation target value of the global process angle model classical formula, especially the precision of large-size devices (W/L ═ 9um/9um), short-channel devices (W/L ═ 9um/0.054um), narrow-channel devices (W/L ═ 0.108um/9um) and small-size devices (W/L ═ 0.108um/0.054 um).
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Therefore, the scope of the invention should be determined from the following claims.
Claims (7)
1. A modeling method of a global process angle model comprises the following steps:
step S1, modeling a total process angle according to design requirements to obtain a plurality of total process angle model parameters;
step S2, designing a global process angle model coefficient related to the size, multiplying the global process angle model coefficient by each total process angle model parameter value, and taking the multiplied parameter as the global process angle model parameter value;
in step S3, parameters in the global process angle model coefficients are adjusted to fit the global process angle model such that the global process angle model meets the target value.
2. The method of claim 1, wherein in step S2, a size-dependent global process angle model coefficient expression is designed.
3. The method of claim 2, wherein the modeling of the global process angle model comprises: the size-dependent global process angle model coefficient expression is as follows:
wherein global is a large-scale parameter, lglobal is a short-channel parameter, wglobal is a narrow-channel parameter, pglobal is a small-scale parameter, Lef is an effective channel length, and wef is an effective channel width.
4. A method of modeling a global process corner model as claimed in claim 3, characterized by: when lef and wef are both large, the last three terms of the global process angle model coefficient expression are ignored, and the large-size parameter global in the global process angle model coefficient expression plays a main role in adjusting the global process angle parameter of a large-size device in the global process angle model or adjusting the global process angle parameters of all devices integrally.
5. A method of modeling a global process corner model as claimed in claim 3, characterized by: when lef is small and wef is large, the last two items of the global process angle model coefficient expression are ignored, and the global process angle model coefficient expression is mainly adjusted by a short-channel parameter lglobal and is used for adjusting the global process angle parameter of a short-channel device in the global process angle model.
6. A method of modeling a global process corner model as claimed in claim 3, characterized by: when the lef is large and wef is small, the second and fourth terms of the global process angle model coefficient expression are ignored, and the global process angle model coefficient expression is mainly adjusted by the narrow channel parameter wglobal and is used for adjusting the global process angle parameter of the narrow channel device in the global process angle model.
7. A method of modeling a global process corner model as claimed in claim 3, characterized by: when both lef and wef are very small, the global process angle model coefficient expression is mainly adjusted by the small-size parameter pglobal, and is used for adjusting the global process angle parameter of the small-size device in the global process angle model.
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