CN110687422A - Method for extracting MOS transistor hot carrier injection effect based on 1/f noise parameter - Google Patents
Method for extracting MOS transistor hot carrier injection effect based on 1/f noise parameter Download PDFInfo
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Abstract
The invention discloses a method for extracting the hot carrier injection effect of an MOS transistor based on 1/f noise parameters, which comprises the following steps: obtaining basic electrical parameters of a selected MOS transistor, and determining conditions for applying radio frequency stress and direct current stress; testing 1/f noise parameters under different grid voltage conditions; performing a hot carrier degradation experiment on the MOS transistor to obtain a curve of the power spectral density of the noise current changing along with the frequency; dividing the data obtained by the experiment into a low frequency band, a medium frequency band and a high frequency band for extracting the data respectively, and realizing the extraction of the hot carrier injection effect; and extracting curves of noise current power spectral density changing along with the grid voltage after the same stress time, the same radio frequency stress and the same direct current stress. The invention provides technical support for researching the influence and mechanism of the hot carrier injection effect on the degradation degree of the MOS transistor under the radio frequency stress condition.
Description
Technical Field
The invention relates to the technical field of semiconductor testing, in particular to a method for extracting a hot carrier injection effect of an MOS transistor based on 1/f noise parameters.
Background
With the continuous reduction of the size of MOS devices, the damage caused by hot carrier effect becomes more and more serious, and becomes one of the main failure mechanisms affecting the device performance. The reliability of MOS devices and integrated circuits is severely affected by the presence of hot carrier effects.
At present, the research aiming at the hot carrier degradation effect of the MOS transistor is mainly carried out by a method of a direct current stress accelerated degradation experiment, and the extraction method of the hot carrier effect is mainly carried out by extracting electrical parameter degradation data. Meanwhile, as the feature size of the MOS transistor device is reduced, the 1/f noise is greatly increased, and the MOS transistor 1/f noise is also receiving more and more attention.
However, the existing research has disadvantages that firstly, the direct current stress cannot completely cover the actual working condition of the MOS transistor, the degradation condition of the MOS transistor under the radio frequency signal is not included, and the existing research on the hot carrier degradation effect under the radio frequency condition is not sufficient; secondly, compared with the traditional method for extracting the hot carrier injection effect by extracting the electrical parameter degradation data, the hot carrier effect damage of the reaction device under various stresses can be more directly perceived and more sensitive by extracting through 1/f noise parameter degradation; on the other hand, the existing research shows that the 1/f noise parameter is directly related to an oxide trap and an interface trap of the MOS transistor, and the degradation degree of the 1/f noise under different frequencies is different, so that the extraction of the 1/f noise parameter plays an important role in deeply researching the degradation mechanism of the hot carrier effect of the MOS device.
Based on this, in order to further study the influence and mechanism of the hot carrier injection effect on the degradation degree of the MOS transistor under the radio frequency stress condition, it is necessary to provide a new extraction method based on 1/f noise to solve the above-mentioned problems.
Disclosure of Invention
The invention aims to provide a method for extracting a hot carrier injection effect of an MOS transistor based on a 1/f noise parameter, which extracts the degradation of the transistor caused by the hot carrier injection effect caused by radio frequency stress by extracting the 1/f noise parameter in a frequency division way and further extracts the density of oxide traps and the density of interface traps generated on a gate oxide layer.
The technical scheme adopted for realizing the purpose of the invention is as follows:
a method for extracting the hot carrier injection effect of an MOS transistor based on 1/f noise parameters comprises the following steps:
obtaining basic electrical parameters of a selected MOS transistor, and determining conditions for applying radio frequency stress and direct current stress;
testing 1/f noise parameters under different grid voltage conditions to obtain a curve of testing 1/f noise parameter change under different grid voltage conditions;
according to the conditions of applying the radio frequency stress and the direct current stress, applying the radio frequency stress and the direct current stress to the MOS transistor for accelerated test, performing hot carrier injection test, and acquiring test data of the transistor at fixed time to obtain a curve of the power spectral density of the noise current changing along with the frequency;
dividing the frequency range of the tested 1/f noise into a low frequency band, a middle frequency band and a high frequency band, extracting 1/f noise parameters in each frequency band respectively, and obtaining a curve of noise current power spectrum density changing along with frequency and a degradation curve of the noise current power spectrum density along with stress time at different stress times so as to realize the analysis of hot carrier injection effect respectively;
in the three frequency bands, at least 5 frequency points are respectively selected in each frequency band, and a curve of noise current power spectral density changing along with a grid voltage after radio frequency stress and direct current stress accelerated degradation experiments under the same stress time is extracted, so that the density of oxide traps and the density of interface traps generated on an MOS transistor grid oxide layer are extracted by analyzing the magnitude of 1/f noise current power density under different frequency bands and different grid voltages.
The basic electrical parameters of the MOS transistor comprise direct current parameters and radio frequency parameters, the direct current parameters comprise drain breakdown voltage, threshold voltage, an output characteristic curve and substrate current, and the radio frequency parameters comprise S parameters.
The basic parameters of the MOS transistor are measured through a semiconductor analyzer, a vector network analyzer and a probe station.
And determining that the maximum value of the drain stress of the direct-current stress voltage is 90% of the drain breakdown voltage, and the value of the gate stress voltage is in the range from the threshold voltage to the value equal to the drain stress voltage.
Wherein the DC stress condition comprises a maximum substrate current stress and a high gate voltage bias stress.
The invention can extract the degradation of the transistor caused by the hot carrier injection effect caused by the radio frequency stress and compare the degradation with the direct current stress result. In addition, the extraction of the density of oxide traps and the density of interface traps generated in the gate oxide layer can be further realized by extracting the magnitude of the power density of the 1/f noise current.
Drawings
Fig. 1 is a flowchart of the method for extracting the hot carrier injection effect of the MOS transistor based on the 1/f noise parameter according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, the technical idea of the present invention is to obtain basic electrical parameters of a selected MOS transistor and determine conditions for applying radio frequency stress and direct current stress; testing 1/f noise parameters under different grid voltage conditions; performing a hot carrier degradation experiment on the selected MOS transistor, and acquiring test data of the transistor to obtain a curve of the power spectral density of the noise current changing along with the frequency; dividing the obtained data into a low frequency band, a medium frequency band and a high frequency band to respectively extract the data so as to realize the extraction of the hot carrier injection effect; and extracting curves of noise current power spectral density changing along with the grid voltage after the same stress time, the same radio frequency stress and the same direct current stress.
The method comprises the following implementation steps:
s01, obtaining basic electrical parameters of the selected MOS transistor, including direct current parameters such as drain breakdown voltage, threshold voltage, output characteristic curve, substrate current and the like, and radio frequency parameters such as S parameters and the like, and determining the range of drain voltage and gate voltage applied by direct current stress, and corresponding radio frequency signal input power and frequency;
the basic parameters of the MOS transistor can be measured by a semiconductor analyzer, a vector network analyzer, a probe station and other instruments.
After the drain breakdown voltage is obtained, the maximum value of the drain stress of the direct-current stress voltage is determined to be 90% of the drain breakdown voltage, and the value of the grid stress voltage is in the range from the threshold voltage to the value equal to the drain stress voltage.
Specifically, 3 groups of stress conditions are selected in the value range as direct current stress conditions, including maximum substrate current stress and high gate voltage bias stress.
Specifically, the input power and gate voltage range of the radio frequency signal correspond to the direct current stress condition, and the radio frequency signal frequency is at least 3 groups within the range of 1-50 GHz.
S02, testing the 1/f noise parameter under different grid voltage conditions. Obtaining the value range of the grid of the MOS transistor in the last step, keeping the voltage of the drain unchanged, and obtaining a curve for testing the 1/f noise parameter change under different grid voltage conditions;
in order to ensure that the voltage condition during the test does not generate the hot carrier injection effect additionally, the drain voltage is kept to be 0.1V during the test.
And S03, according to the stress condition set in the step S01, applying radio frequency stress and direct current stress acceleration tests to the MOS transistor, and carrying out hot carrier injection tests. The test adopts a mode of alternately carrying out test and stress, and regularly acquires the test data of the MOS transistor to obtain the curve of the power spectral density of the noise current changing along with the frequency.
S04, dividing the frequency range of the tested 1/f noise into a low frequency band, a middle frequency band and a high frequency band, and extracting 1/f noise parameters in each frequency band respectively to obtain a curve of noise current power spectrum density changing along with frequency and a degradation curve of the noise current power spectrum density along with stress time at different stress times. By means of the obtained curves and the degradation degree data, the influence of the hot carrier injection effect under different stress conditions on the MOS transistor can be analyzed, and the hot carrier injection effect can be analyzed respectively.
And S05, selecting not less than 5 frequency points in each of the three frequency bands, and extracting curves of noise current power spectral density changing along with the grid voltage after the radio frequency stress and direct current stress accelerated degradation experiment under the same stress time. Therefore, the density of oxide traps and the density of interface traps generated on the MOS transistor gate oxide layer can be extracted by analyzing the magnitude of the 1/f noise current power density under different frequency bands and different gate voltages.
In order to ensure the accuracy of the experiment and the richness of data and reduce the experiment time as much as possible, the experiment selects 5 MOS transistors for experiment.
The invention realizes the extraction of the degradation condition of the MOS transistor after the radio frequency stress is applied, and the comparison research is carried out on the hot carrier injection effect under the direct current stress; extracting hot carrier effect caused by radio frequency stress by extracting data of 1/f noise degradation under different radio frequency stress conditions and different frequency bands; and moreover, curves of 1/f noise parameters changing along with the grid voltage under different frequencies can be further obtained, noise degradation degrees under small grid voltage and large grid voltage are respectively extracted, and oxide trap density and interface trap density generated by the hot carrier effect are extracted accordingly.
The invention can extract the degradation of the transistor caused by the hot carrier injection effect caused by the radio frequency stress and compare the degradation with the direct current stress result. In addition, the extraction of the density of oxide traps and the density of interface traps generated in the gate oxide layer can be further realized by extracting the magnitude of the power density of the 1/f noise current.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (5)
1. The method for extracting the hot carrier injection effect of the MOS transistor based on the 1/f noise parameter is characterized by comprising the following steps of:
obtaining basic electrical parameters of a selected MOS transistor, and determining conditions for applying radio frequency stress and direct current stress;
testing 1/f noise parameters under different grid voltage conditions to obtain a curve of testing 1/f noise parameter change under different grid voltage conditions;
according to the conditions of applying the radio frequency stress and the direct current stress, applying the radio frequency stress and the direct current stress to the MOS transistor for accelerated test, performing hot carrier injection test, and acquiring test data of the transistor at fixed time to obtain a curve of the power spectral density of the noise current changing along with the frequency;
dividing the frequency range of the tested 1/f noise into a low frequency band, a middle frequency band and a high frequency band, extracting 1/f noise parameters in each frequency band respectively, and obtaining a curve of noise current power spectrum density changing along with frequency and a degradation curve of the noise current power spectrum density along with stress time at different stress times so as to realize the analysis of hot carrier injection effect respectively;
in the three frequency bands, at least 5 frequency points are respectively selected in each frequency band, and a curve of noise current power spectral density changing along with a grid voltage after radio frequency stress and direct current stress accelerated degradation experiments under the same stress time is extracted, so that the density of oxide traps and the density of interface traps generated on an MOS transistor grid oxide layer are extracted by analyzing the magnitude of 1/f noise current power density under different frequency bands and different grid voltages.
2. The method for extracting hot carrier injection effect of MOS transistor based on 1/f noise parameter as claimed in claim 1, wherein the basic electrical parameters of MOS transistor comprise DC parameters including drain breakdown voltage, threshold voltage, output characteristic curve, and substrate current, and RF parameters including S parameter.
3. The method for extracting the hot carrier injection effect of the MOS transistor based on the 1/f noise parameter as claimed in claim 1, wherein the basic parameters of the MOS transistor are measured by a semiconductor analyzer, a vector network analyzer and a probe station.
4. The method for extracting the hot carrier injection effect of the MOS transistor based on the 1/f noise parameter as claimed in claim 2, wherein the maximum value of the drain stress of the direct current stress voltage is determined to be 90% of the drain breakdown voltage, and the value of the gate stress voltage is within the range from the threshold voltage to the value equal to the drain stress voltage.
5. The method of claim 1, wherein the DC stress condition comprises a maximum substrate current stress and a high gate voltage bias stress.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113466792A (en) * | 2021-06-01 | 2021-10-01 | 浙江大学 | Low-frequency noise positioning method for gallium nitride field effect sensor |
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