CN110187251A - A method of displacement damage defect level is analyzed using frequency noise - Google Patents
A method of displacement damage defect level is analyzed using frequency noise Download PDFInfo
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Abstract
The invention discloses a kind of methods using frequency noise analysis displacement damage defect level, when high energy nuclear radiation and semiconductor material interact, can by some atoms from its original position transfer into semiconductor lattice.This radiation-induced the phenomenon that displacement damage is formed in crystal, may result in the variation of equipment performance.And the distribution of 1/f noise and defect in device and energy level variations are closely related, using suitable noise model, concentration, spatial position and Energy distribution of electroactive trap etc. can be extracted about the relevant bulk information of device reliability, to obtain the related data of displacement damage defect level.
Description
Technical field
It is the present invention relates to Space Radiation Effects and reinforcement technique field, in particular to a kind of using frequency noise analysis displacement
The method of damage defect energy level.
Background technique
In recent years, the HEMT device based on GaN is it is verified that with the HEMT device that is made based on other materials
It compares, there are the excellent properties such as high frequency and high power.Although GaN/AlGaN HEMT device has wider forbidden bandwidth and height
Saturated electrons mobility and there is 2DEG on heterojunction boundary, but integrity problem of the device in space environment
Still receive significant attention.1/f noise measurement can be used to help to understand the defect for influencing device reliability in we.
Causing the energy particle of permanent damage in space environment mainly has proton, electronics and heavy ion etc..Work as energy
When particle and semiconductor devices interact, several different physical processes are had.First process be ionization, charged particle with
Target material interacts and generates electron hole pair；Second process is displacement damage, and incident particle transmits enough energy
Measure makes it be moved to another position from original position to target atoms, and generates a vacancy.Compared to ionization damage
Speech, displacement damage are based on prior radiation effect in GaN HEMT device.
In a broad sense, the random fluctuation phenomenon that all power spectral densities and frequency are inversely proportional can be described as 1/f noise.When
When acting on a constant bias on one semiconductor devices, what electric current can be spontaneous is fluctuated.For transistor, mainly there is two
Kind mechanism: 1) thermal noise or white noise are caused by the result of random thermal motion of carrier at ambient temperature, and its voltage noise power
Density spectra is independently of its frequency；2) flicker noise, that is, 1/f noise, it shows that the frequency of voltage noise power density spectrum relies on:
Svd∝1/fα(α range is 0.8~1.4), according to formula:
For low-frequency noise generation there are many kinds of mechanism.Generally, noise generation is since AlGaN/GaN channel is attached
Electron trap capture and electronics in nearly defect take off trap.There are two very popular models to explain noise spectrum: Hooge migration
Rate volatility model and McWhorter number fluctuation model.Hooge model is using the fluctuation of 1/f noise as single channel
The fluctuation of carriers mobility is stated by following relationship:
αHIt is Hooge constant.
McWhorter number fluctuation model theory points out, due to surface state charge-trapping and cause current-carrying
The fluctuation of subnumber amount, so as to cause the generation of 1/f noise.The simplest version of this model assumes that Trapping Centers are non-uniform
It is distributed near channel, and time constant increases with the increase of channel distance.Then according to this model, if one
MOS device is run in the linear region of permanent leakage current and gate bias, then 1/f noise can be described are as follows:
SvdIt is excess drain voltage noise power density spectrum, Vth、VgAnd VdIt is threshold voltage, gate voltage and drain voltage, f respectively
It is frequency, q is charge, CoxIt is the specific capacitance of grid oxygen, L, W are the length and width that transistor is got at, k respectivelyBIt is that Boltzmann is normal
Number, T is absolute temperature, Dt(Ef) it is in fermi level EfUnder, the trap number of per area per energy, τ1、τ2It is minimum respectively
With maximum tunneling time.
Dutta and Horn is it has been shown that an approximate 1/f noise spectrum is the random distribution due to activation energy.They demonstrate,prove
The temperature-independent of bright 1/f noise is often as the random distribution process of thermal activation energy, it has the distribution of an activation energy, and
Change with temperature.
By development in more than 50 years, low-frequency noise gradually became characterization heterogeneous interface defect from the important parameter of transistor
The Efficient Characterization method of the information such as energy level, position, density.In MOSFET element, carrier is by being tunneled through in semiconductor body
Oxide traps will result directly in the carrier number fluctuation in channel into channel；And the fluctuation of trapped charge itself will affect
Surface potential can not only directly result in the carrier number fluctuation in channel, and can collide with channel carriers, and coulomb is caused to dissipate
It penetrates, the mobility in channel is made to generate fluctuation；The compound action of both fluctuations will lead to the generation of the electric current in entire channel and rise
It falls.Junction device, although without channel, only contact interface.But carrier pass through interface oxide layer trap when, equally
It can be captured or emit, lead to the fluctuation of surface recombination velocity (S.R.V.), to influence the number of surface minority carrier, and will affect
Entire interface current generates surface current fluctuation.It therefore, be according to material in the 1/f noise emulation to specific material or device
The different structure of material or device judges that its noise generates the main mechanism that source or noise generate.
Therefore, how to provide it is a kind of using low-frequency noise to displacement damage defect energy level analysis method be art technology
Personnel's technical problem urgently to be resolved.
Summary of the invention
The present invention the studies above status and there are aiming at the problem that, do not changing element layout, do not change production technology step
Under the premise of rapid, propose a kind of analysis method using low-frequency noise to displacement damage defect energy level, include the following steps:
Step 1: irradiation bomb is selected to carry out irradiation experiment to GaN HEMT samples devices；
Step 2: carrying out low frequency noise measurement to samples devices after irradiation, noise power density spectrum is obtained；
Step 3: defect Energy distribution caused by displacement damage is calculated according to noise power density spectrum.
Preferably, the irradiation bomb in the step 1 includes but is not limited to proton irradiation, neutron irradiation.
Preferably, GaN HEMT samples devices described in the step 2 is biased in the linear condition of constant voltage source power supply
When, execute excess noise measurement；Wherein, low frequency noise measurement circuit specifically includes:
The drain electrode of GaN HEMT samples devices is connected to the constant voltage source by resistor, and drain voltage passes through low frequency
Noise amplifier amplification, the low-frequency noise amplifier out connects spectrum analyzer, close for obtaining current noise power
Degree spectrum.
Preferably, during low frequency noise measurement, GaN HEMT samples devices grid voltage is adjusted, noise is made to be derived from channel
Grid part.
Preferably, in the step 3, defect Energy distribution D (E0) with the temperature-independent calculation formula of noise are as follows:
Wherein, the dependence of temperature and noise frequency index value are as follows:
K is Boltzmann constant, and T is absolute temperature, the π of ω=2 f, τ0It is the characteristic time of carrier defect scattering, Sv
(ω, T) is noise power density spectrum, E0=-kTln (ω τ0) be effective trap activation energy, i.e., in a defect between
Energy barrier between two metastable state charges.
It preferably, further include that DC and RF parameter testing is carried out to GaN HEMT samples devices before the step 1.
It preferably, further include that DC and RF parameter testing is carried out to samples devices after irradiating in the step 2.
Compared with the prior art the present invention has the advantages that
1) experiment discovery, in non-irradiated MOS transistor, the amplitude of low-frequency noise and the radiation-induced hole of oxide
Capture rate is related, moreover, low-frequency noise and the charge of oxide capture also have a very big association, but and interface trap
Charge-independent, so can according to low-frequency noise come effectively accurately the analysis variation of carrier mobility, fluctuation quantity and
The distribution of trapped charge.
2) the bound trap density in GaN HEMT device is measured using low-frequency noise, in addition, low-frequency noise is to sunken
Trap and defect are very sensitive, and with radiation environment and Pitfall trap/de- trap have it is very big contact, so the measurement of low-frequency noise
It goes to help to position and identify the defect due to caused by radiation effect in GaN HEMT device as a diagnostic tool.
3) 1/f noise in device and electroactive defect are closely related, using noise model, can extract electroactive trap
Concentration, spatial position and Energy distribution etc. about the relevant bulk information of device reliability, to assess device reliability.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described.It should be evident that the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is flow chart of the method for the present invention.
Fig. 2 is the grid voltage dependence graph of current noise power density spectrum provided in an embodiment of the present invention.
Fig. 3 is low-frequency noise measuring circuit figure provided in an embodiment of the present invention.
Fig. 4 (a) is the experiment of noise power density spectrum and to calculate gained frequency before proton irradiation provided in an embodiment of the present invention
The function of rate index value and temperature (85K~450K).
Fig. 4 (b) is the experiment of noise power density spectrum and to calculate gained frequency after proton irradiation provided in an embodiment of the present invention
The function of rate index value and temperature (85K~450K).
Fig. 5 is letter of the energy barrier provided in an embodiment of the present invention as O-N distance and O-H defect configuration (I) and (II)
Number.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Technical principle of the invention:
For a HEMT device, in Scdvs.Vg-VthFigure in merit attention there are three region, as shown in Figure 1,
These three regions are relative to VthFor, compare and is biased dependent on grid voltage.The channel resistance of HEMT device is by the non-of opposite constant
Gate part resistance RUWith the variable resistance R of gate partGTwo parts composition, therefore:
Wherein, μ is channel mobility, nchIt is the carrier density in the region 2DEG, lgateIt is the length of channel gate region, W
It is ditch road width, q is electron charge.According to the Hooge model of HEMT device low-frequency noise, the noise of transistor channel gate region can
Expression are as follows:
Work as VgWhen the threshold voltage of very close grid, carrier density very little in channel gate region, and noise rises
Source is determined by the noise of channel gate part, and RG≥RU.So under this maximum conditions, Hooge model expression can be with
Abbreviation are as follows:
Because of Nch~(Vg-Vth)-1, so the grid voltage dependence that can estimate noise is in Hooge model:
When grid voltage is bigger relative to threshold voltage, electron density increases in channel, and noise mainly originates from ditch
The gate part in road.If but RG< < RU, then Hooge model is just similar to:
For bigger grid voltage, resistance and noise are controlled by the non-gate part of channel, and noise and grid
Bias is independent from each other, NUIt is the carrier population amount of non-gate part in channel:
Therefore, noise and gate voltage of the prediction in this region are relatively independent.
For GaN HEMT device, low frequency noise measurement is carried out, and according to measured Svd, vs.Vg-VthFigure obtains correlation
The information of defect level.
During proton irradiation, a H atom may be from ONIt is removed in-H.This reaction is low along with one
Energy barrier, as shown in figure 5, wherein Fig. 5 (a): presenting and compound for ON-H defect reconfigure required energy potential
Building is respectively 1.0eV and 05Ev.These calculation shows that 0.9eV defect peak reduce and the peak increase of 0.2eV defect be with from ON-
H atom, which is removed, in H is associated.According to Fig. 5 (b) the result shows that, ON- H density is reduced, ONDefect concentration increases.Also it can observe
It arrives, much smaller in the increased amount of amount ratio 0.2eV peak value of 0.9eV and 0.55eV reduction, very strong demonstrates new low energy
Amount defect generates under highest fluctuation, these newly generated defects are likely to the hole N.
Operating process of the invention specifically includes:
S1, it chooses and tests required GaN HEMT device, guarantee that the growth pattern of all devices is identical.To whole samples
Device carries out DC and RF parameter testing.DC (direct current) parameter testing and RF (radio frequency) parameter testing are surveyed using existing special instrument
, it mainly include that the curves such as the output characteristics to device, transfer characteristic, mutual conductance, grid leakage are tested.
S2, irradiation bomb (proton, neutron etc.) is selected to carry out irradiation experiment.In irradiation process, guarantee all pin ground connection.
Duration is irradiated to be determined according to parameters such as selected irradiation bomb, irradiation and dosage rates.
DC parameter testing, test condition are as follows: V are carried out to samples devices after S3, irradiationD=0~1V, Vstep=0.2V；Into
Row RF parameter testing, test condition are as follows: under half-open position, VD=5V, VG≈Vpinch-off；The test temperature of system and connection school
It is quasi- all identical with predose.
S4, low-frequency noise measurement.As shown in Figure 3.When device bias is in the linear shape powered by HP 4140B constant voltage source
When state, excess noise measurement is executed.One resistor is connected to drain end to protect and adjust drain bias.Adjust grid
Pressure makes noise be derived from the grid part of channel, determines whether noise is derived from grid part by following formula:
Wherein, SvdFor drain voltage noise power density spectrum；CoxUnit area grid oxygen capacitor；kBBoltzmann constant；L and W
Respectively grid length and grid width；τ1And τ2Respectively represent minimum and maximum tunneling time；Dt(Ef) represent in EfUnder fermi level, unit
The trap number of square measure energy；Vth、Vg、VdRespectively threshold voltage, grid voltage, drain terminal voltage；F is frequency；Q is the quantity of electric charge；T
It is that the regulated value of the specific grid voltage of temperature is determined by GaN HEMT device manufacturing process and device power.Drain voltage is using one
A low-frequency noise amplifier SR 560 amplifies, and power density spectrum is calculated by a SR760 spectrum analyzer, frequency
Rate range is in 3Hz~390Hz.After test to obtained transfer characteristic curve, output characteristic curve and power density spectrum with
The curve of frequency is analyzed, and the variation of defect level caused by displacement damage can be obtained.
Specifically, according to transfer characteristic curve and output characteristic curve, the ginseng such as available threshold voltage, drain saturation current
Number (these parameters are measured using existing instrument, and data can immediately arrive at), then in conjunction with noise power density spectrum curve, knot
It closes and states SvdDrain voltage noise power density spectrum calculation formula and known threshold voltage, drain saturation current, obtain SvdAnd f
Relationship between frequency；Then using the relationship of temperature and the frequency of noise in S5, the distribution of defect level can be obtained.
The temperature-independent of S5, noise.The temperature range of low frequency noise measurement is 85K ≈ 450K, these temperature correspond to
The energy window of 0.20eV~1.05eV.Device bias condition: Vd=0.15V, Vg-Vpinch-off=2V.Vpinch-offRefer to pinch off
Voltage is exactly the voltage of grid and source electrode, after field-effect tube conducting, gradually decreases grid voltage, until field-effect tube turns off
Until, the voltage of grid and source electrode is exactly the pinch-off voltage of field-effect tube at this time.
Assuming that during measurement without generating annealing and new defect, then the frequency and temperature dependence of noise are as follows:
Over the entire temperature range, the experimental result value γ and Dutta-Horn model value before and after proton irradiation meets, such as
Shown in Fig. 4 (a) and 4 (b).This shows that the low-frequency noise value according to Dutta-Horn model is accurately, so can be making an uproar
The feature of sound temperature dependency and the distribution D (E of defect energy0) change connect.Here E0It is in a defect between two
The distribution of energy barrier between a metastable state charge, i.e. defect level, calculation formula:
E0=-kTln (ω τ0)
K is Boltzmann constant, and T is absolute temperature, the π of ω=2 f, τ0It is the characteristic time of carrier defect scattering, for
For the defects of GaN, τ0≈3×10-14s.Defect level is distributed D (E0) with the temperature-independent calculation formula of noise size are as follows:
The present invention is not disclosed technology and belongs to field technical staff's common knowledge.
Above to it is provided by the present invention it is a kind of using frequency noise analysis displacement damage defect level method carry out
It is discussed in detail, used herein a specific example illustrates the principle and implementation of the invention, above embodiments
Illustrate to be merely used to help understand method and its core concept of the invention；At the same time, for those skilled in the art, according to
According to thought of the invention, there will be changes in the specific implementation manner and application range, in conclusion the content of the present specification
It should not be construed as limiting the invention.
Herein, relational terms such as first and second and the like be used merely to by an entity or operation with it is another
One entity or operation distinguish, and without necessarily requiring or implying between these entities or operation, there are any this reality
Relationship or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to the packet of nonexcludability
Contain, so that the process, method, article or equipment for including a series of elements not only includes those elements, but also including
Other elements that are not explicitly listed, or further include for elements inherent to such a process, method, article, or device.
In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including the element
Process, method, article or equipment in there is also other identical elements.
Claims (7)
1. a kind of method using frequency noise analysis displacement damage defect level, characterized by the following steps:
Step 1: irradiation bomb is selected to carry out irradiation experiment to GaN HEMT samples devices；
Step 2: carrying out low frequency noise measurement to samples devices after irradiation, noise power density spectrum is obtained；
Step 3: defect Energy distribution caused by displacement damage is calculated according to noise power density spectrum.
2. a kind of method using frequency noise analysis displacement damage defect level according to claim 1, feature exist
In the irradiation bomb in the step 1 includes but is not limited to proton irradiation, neutron irradiation.
3. a kind of method using frequency noise analysis displacement damage defect level according to claim 1, feature exist
In when GaN HEMT samples devices described in the step 2 is biased in the linear condition of constant voltage source power supply, execution is excessive to make an uproar
Sound measurement；Wherein, low frequency noise measurement circuit specifically includes:
The drain electrode of GaN HEMT samples devices is connected to the constant voltage source by resistor, and drain voltage passes through low-frequency noise
Amplifier amplification, the low-frequency noise amplifier out connects spectrum analyzer, for obtaining current noise power density spectrum.
4. a kind of method using frequency noise analysis displacement damage defect level according to claim 3, feature exist
During low frequency noise measurement, adjusting GaN HEMT samples devices grid voltage makes noise be derived from the grid part of channel.
5. a kind of method using frequency noise analysis displacement damage defect level according to claim 1, feature exist
In, in the step 3, defect Energy distribution D (E0) with the temperature-independent calculation formula of noise are as follows:
Wherein, the dependence of temperature and noise frequency index value are as follows:
K is Boltzmann constant, and T is absolute temperature, the π of ω=2 f, τ0It is the characteristic time of carrier defect scattering, Sv(ω, T)
It is noise power density spectrum, E0=-kTln (ω τ0) it is effective trap activation energy, i.e., between two Asias in a defect
Energy barrier between stable state charge.
6. a kind of method using frequency noise analysis displacement damage defect level according to claim 1, feature exist
In the step 1 further includes carrying out DC and RF parameter testing to GaN HEMT samples devices before.
7. a kind of method using frequency noise analysis displacement damage defect level according to claim 6, feature exist
In, in the step 2, further include irradiation after to samples devices carry out DC and RF parameter testing.
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| CN110687422A (en) * | 2019-09-29 | 2020-01-14 | 天津大学 | Method for extracting MOS transistor hot carrier injection effect based on 1/f noise parameter |
| CN112098790A (en) * | 2020-08-05 | 2020-12-18 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | MIS-HEMT (metal insulator semiconductor-high electron mobility transistor) -based energy distribution testing method and system for boundary trap |
| CN113297732A (en) * | 2021-05-18 | 2021-08-24 | 西安石油大学 | Method for constructing analysis model for correlation between trapped charges and noise amplitude |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113297732A (en) * | 2021-05-18 | 2021-08-24 | 西安石油大学 | Method for constructing analysis model for correlation between trapped charges and noise amplitude |
| CN114217199A (en) * | 2021-12-10 | 2022-03-22 | 中国科学院新疆理化技术研究所 | Method and device for realizing 1/f noise variable temperature test of semiconductor device |
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