CN101325385A - Ceramic kiln-path heat-recovering semiconductor thermal difference generation method and apparatus - Google Patents
Ceramic kiln-path heat-recovering semiconductor thermal difference generation method and apparatus Download PDFInfo
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- CN101325385A CN101325385A CNA2008100213657A CN200810021365A CN101325385A CN 101325385 A CN101325385 A CN 101325385A CN A2008100213657 A CNA2008100213657 A CN A2008100213657A CN 200810021365 A CN200810021365 A CN 200810021365A CN 101325385 A CN101325385 A CN 101325385A
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Abstract
Disclosed is a ceramics kiln heat recovery semiconductor thermo-electric generation method of the invention and a device, wherein the ceramics device for emitting the residual heat is arranged below the device, and the radiation heat is adsorbed by a collecting plate, which is transferred to the hot face of the semiconductor thermo-electric generation module; the thermal fin with ribs are arranged above the cold face of the semiconductor thermo-electric generation module, then the hot of the cold face is emitted out, thereby generating the temperature difference at the two end faces of the semiconductor thermo-electric generation module. Due to the Bessel effect in the semiconductor, the electric potential difference is generated, outputted through the voltage stabilization and inverting circuit, namely as the power supply. The structure of the device comprises a semiconductor thermo-electric generation module, a collecting plate, thermal fin with ribs, which has the advantages of directly converting the recovery waste beat into the electric energy, to cause the electric power generation process free of noise, abrasion and dielectric leakage, and having small volume, light weight, convenient movement, no maintenance and long service life and the like.
Description
Technical field
What the present invention relates to is ceramic kiln-path heat-recovering semiconductor thermal difference generation method and device, is to be converted to core technology with thermoelectricity, and reclaiming generating with the industrial ceramics using residual heat from kiln furnace is the new energy development applied technical field of target.
Background technology
China is power consumption big country, the industrial exhaust heat enormous amount, no matter be solid-state, gaseous state, that liquid state all has a large amount of industrial exhaust heats to have is to be recycled, thereby these waste heats in the enterprise production process recycled for energy efficiency very large society, economic benefit are arranged.The ceramic component that the industrial ceramics kiln is produced, fire finish after temperature higher, cool off, ceramic component will move a quite long segment distance in the kiln road in this process, gives out the temperature that is cooled to process stipulation behind a large amount of heats.This part heat does not also reclaim at present at home, and this device is recycled it at this part waste heat exactly.
Summary of the invention
The present invention is to provide a ceramic kiln-path heat-recovering semiconductor thermal difference generation method and device, the waste heat that is intended to ceramic component that industrial ceramics manufacturing enterprise is produced reclaims and generates electricity, and solves in the ceramic kiln heat recovery problem of ceramic component in natural cooling process in the kiln road.
Technical solution of the present invention: ceramic kiln-path heat-recovering semiconductor thermal difference generation method, the ceramic component operation that it is characterized in that dissipate excess heat is through thermal-arrest plate below, receive its heat by the thermal-arrest plate, and the heat transferred of collecting is arrived the semi-conductor thermo-electric generation module hot side; Fin with ribbing is arranged in the upside of semi-conductor thermo-electric generation module huyashi-chuuka (cold chinese-style noodles), utilize the blower fan air-supply, rely on Forced Air Convection that fin is cooled off, fin with ribbing absorbs heat from the huyashi-chuuka (cold chinese-style noodles) of semi-conductor thermo-electric generation module, the huyashi-chuuka (cold chinese-style noodles) of semi-conductor thermo-electric generation module is cooled to the temperature more much lower than hot side, thereby the both ends of the surface at semi-conductor thermo-electric generation module produce a bigger temperature difference, semi-conductor thermo-electric generation module is directly changed into electrical potential difference with temperature difference by the Bezier effect, after voltage stabilizing circuit and alternating current-direct current conversion, use as power supply.The semi-conductor thermo-electric generation module and the ceramic component direction of motion are arranged in parallel, and the thermal-arrest plate is arranged in the below of semi-conductor thermo-electric generation module, and the thermal-arrest plate is a thin plate, select the bigger metallic material of aluminum of conductive coefficient to make, and are convenient to the quick transmission of heat; Fin with ribbing is arranged in the top of semi-conductor thermo-electric generation module, described fin with ribbing is to be covered with on the plate-shape metal sheet that certain (fin height is looked the temperature kiln road in, heat dissipation capacity is different and difference, need to calculate as the case may be to determine) fin of height, in order to increase area of dissipation.For preventing that the blower fan air-supply from influencing the natural cooling of pottery in the kiln road, on fin with ribbing, add a cage, make cage and fin with ribbing form an air channel, blower fan is directly blown in the air channel, relies on heat convection to take away the heat of fin.Fin with ribbing can absorb the semi-conductor thermo-electric generation module huyashi-chuuka (cold chinese-style noodles) and pass the heat of coming, and the huyashi-chuuka (cold chinese-style noodles) of semiconductor thermo-electric generation apparatus is cooled down, and forms a bigger temperature difference between the semiconductor thermo-electric generation apparatus hot side.
Ceramic kiln-path heat-recovering semiconductor thermal difference generation device, its structure are to comprise semi-conductor thermo-electric generation module, thermal-arrest plate, fin with ribbing; Wherein semi-conductor thermo-electric generation module is clipped in the middle of thermal-arrest plate and the fin with ribbing, the thermal-arrest plate is close to the hot side of semi-conductor thermo-electric generation module downside, fin with ribbing is close to the huyashi-chuuka (cold chinese-style noodles) of semi-conductor thermo-electric generation module upside, and thermal-arrest plate, fin with ribbing are with bolted together.Described fin with ribbing is the fin that is covered with certain (fin height is looked temperature in the kiln road, heat dissipation capacity is different and different, and calculating is determined as the case may be) height on the plate-shape metal sheet, in order to increase area of dissipation.For preventing that the blower fan air-supply from influencing the natural cooling of pottery in the kiln road, adds a cage on fin with ribbing.
Advantage of the present invention: waste heat can be directly changed into electric energy, need not earlier thermal power transfer to be become mechanical energy, again mechanical energy be converted to the complex process of electric energy, thereby improved the reliability and the useful life of conversion efficiency of thermoelectric and generator by traditional mode; Compare with other forms of waste-heat recovery device, the present invention is a kind of all solid state power conversion mode, has in power generation process noiselessness, does not have wearing and tearing, no dielectric leakage, volume are little, in light weight, conveniently moving, long service life; Apparatus of the present invention are simple in structure, are convenient to processing, and utilize industrial afterheat power generation, can reduce enterprise energy consumption, meet national industrial policies, are easy to apply.
Description of drawings
Accompanying drawing 1 is a cross section structure schematic diagram of the present invention.
Accompanying drawing 2 is semiconductor thermoelectric effect principle figure.
Among the figure 1 is thermal-arrest plate, the 2nd, semi-conductor thermo-electric generation module, 3 fin with ribbing, the 4th, cage, the 5th, refractory ceramics device (as the ceramic floor brick), the 6th, heat energy, the 7th, high temperature conductor, the 8th, cryoconductor, the 9th, electric conductor, the 10th, release heat (hot junction), the 11st absorbs heat (cold junction), the 12nd, P﹠amp; N type semiconductor, the 13rd, electrical insulator, the 14th, electron stream.
Embodiment
Contrast accompanying drawing 1, its structure comprises thermal-arrest plate 1, semi-conductor thermo-electric generation module 2, fin 3 with ribbing, cage 4.Wherein semi-conductor thermo-electric generation module 2 is clipped in the middle of thermal-arrest plate 1 and the fin with ribbing 3, thermal-arrest plate 1 is close to the downside of semi-conductor thermo-electric generation module 2 hot sides, fin 3 with ribbing is close to the upside of semi-conductor thermo-electric generation module 2 huyashi-chuuka (cold chinese-style noodles), semi-conductor thermo-electric generation module 2, thermal-arrest plate 1, fin 3 with ribbing so that reduce contact heat resistance as far as possible, improves the efficient that heat is transmitted with bolted together.Semi-conductor thermo-electric generation module closely is clipped in the middle of heat collector and the radiator.Cage 4 is buckled on the fin, forms the air channel.
Described semi-conductor thermo-electric generation module 2, form by polylith semiconductor power-generating chip, every chip block is by a plurality of semiconductor PNs be in series (referring to Fig. 3), its electricity generating principle is based on the Bezier effect, electronics in the semi-conducting material can flow to low-temperature end from temperature end under the driving of temperature difference, thereby forms electrical potential difference.
Described thermal-arrest plate 2 is the modules of collecting heat energy, is located at the below of whole device, and it directly receives the heat that ceramic component gives off, again with the hot side of heat exchange pattern with heat transferred semiconductor electricity generation module.The thermal-arrest plate adopts bigger metal material of conductive coefficient such as aluminium etc., so that the quick transmission of heat.
Described fin with ribbing 3 is modules that the heat with the semiconductor module huyashi-chuuka (cold chinese-style noodles) distributes, and is arranged in the upside of semi-conductor thermo-electric generation module, it is a thin plate with ribbing, add cage above, blower fan is blown in cage during work, relies on gas forced-convection heat transfer mode to take away heat.
Ceramic kiln-path heat-recovering semiconductor thermal difference generation method, with the ceramic component of dissipate excess heat as thermal source, the ceramic component operation is through thermal-arrest plate 1 below, and thermal-arrest plate 1 absorbs the heat that it radiates, and the heat transferred of collecting is arrived the semi-conductor thermo-electric generation module hot side; Fin 3 with ribbing is arranged in semiconductor electricity generation module 1 huyashi-chuuka (cold chinese-style noodles) upside, air skims over fin and takes away heat, thereby fin can be cooled to huyashi-chuuka (cold chinese-style noodles) a temperature lower than hot side, both ends of the surface at semi-conductor thermo-electric generation module 1 produce a bigger temperature difference like this, under the ordering about of Bezier effect, the electronics in the semi-conductor thermo-electric generation module 1 flows to low-temperature end from temperature end, forms electrical potential difference at cold junction, after voltage stabilizing rectification and AC-DC conversion, can connect load and use as power supply.
To slow cooling section ceramic component in the ceramic kiln-path waste heat reclaim, be specific embodiment that this device is used.The ceramic component that bakes, carries out will giving out a large amount of heats during the natural cooling in the kiln road also up to more than 600 ℃ in the slow cooling section temperature.This device is arranged in the kiln road, and ceramic component gives out heat in motion process, after the thermal-arrest plate absorbs these heats, it is delivered to the hot side of semi-conductor thermo-electric generation module.The hot side of semi-conductor thermo-electric generation module can be with heat transferred to huyashi-chuuka (cold chinese-style noodles), huyashi-chuuka (cold chinese-style noodles) is with the heat transferred fin, the fin top adds a cage, form the air channel, blower fan is blown in cage, fin is cooled, and the heat that huyashi-chuuka (cold chinese-style noodles) passes over is pulled away, and two end faces at semi-conductor thermo-electric generation module have just formed a bigger temperature difference like this.Because the Bezier effect, semiconductor module will produce electrical potential difference.By circuit this electrical potential difference output promptly be can be used as power supply.
Semi-conductor thermo-electric generation module 2 is core components of this device, and it can convert temperature difference to electrical potential difference and be about to thermal power transfer and become electric energy.Its operation principle is based on the Bezier effect of semi-conducting material:
See Fig. 2, in P (N) N-type semiconductor N, the hole of temperature end (electronics) concentration ratio low-temperature end is big, and under the driving of this concentration gradient, hole (electronics) can spread to low-temperature end from temperature end, thereby form a kind of electrical potential difference owing to the thermal diffusion effect.The hot junction of P type and N type semiconductor is linked to each other, then can obtain a voltage at cold junction, such PN junction just can utilize the temperature difference between high temperature heat source and the low-temperature heat source directly to change heat energy into electric energy.
Contrast Fig. 3, shown the schematic diagram of semi-conductor thermo-electric generation module among the figure, temperature difference makes each to producing electrical potential difference in the PN junction, will be much to being together in series, just can obtain sufficiently high voltage, and become a thermal generator.
Claims (2)
1, ceramic kiln-path heat-recovering semiconductor thermal difference generation method, the ceramic component that it is characterized in that dissipate excess heat is through ceramic kiln-path heat-recovering semiconductor thermal difference generation device below, receive heat by the thermal-arrest plate, and the heat transferred that the thermal-arrest plate is collected is arrived the semi-conductor thermo-electric generation module hot side; Fin with ribbing is arranged in the upside of semi-conductor thermo-electric generation module huyashi-chuuka (cold chinese-style noodles), utilize the blower fan air-supply, rely on Forced Air Convection that fin is cooled off, fin with ribbing absorbs heat from the huyashi-chuuka (cold chinese-style noodles) of semi-conductor thermo-electric generation module, the huyashi-chuuka (cold chinese-style noodles) of semi-conductor thermo-electric generation module is cooled to the temperature more much lower than hot side, thereby the both ends of the surface at semi-conductor thermo-electric generation module produce a bigger temperature difference, semi-conductor thermo-electric generation module is directly changed into electrical potential difference with temperature difference by the Bezier effect, after voltage stabilizing circuit and AC-DC conversion, use as power supply; The ceramic kiln-path heat-recovering semiconductor thermal difference generation device is parallel to the ceramic component direction of motion to be arranged, the thermal-arrest plate device below, the thermal-arrest plate directly absorbs the heat that ceramic component radiates, by heat conduction with the heat transferred semi-conductor thermo-electric generation module; Fin is made the thin plate that has straight rib, for preventing the natural cooling of ceramic component in the blower fan air-supply interference kiln road, above fin, add cage, form an air channel, blower fan is blown in the air channel, relies on the blower fan air-supply to form the heat that fin is taken away in forced convertion.
2, ceramic kiln-path heat-recovering semiconductor thermal difference generation device, its feature semi-conductor thermo-electric generation module is clipped in the middle of thermal-arrest plate and the fin, the thermal-arrest plate is close to the hot side of semi-conductor thermo-electric generation module downside, fin with ribbing is close to the huyashi-chuuka (cold chinese-style noodles) of semi-conductor thermo-electric generation module upside, thermal-arrest plate, formula fin with ribbing and semi-conductor thermo-electric generation module are with bolted together, described fin is made the thin plate that has straight rib, adds cage above fin.
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| CNA2008100213657A CN101325385A (en) | 2008-08-01 | 2008-08-01 | Ceramic kiln-path heat-recovering semiconductor thermal difference generation method and apparatus |
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| CNA2008100213657A CN101325385A (en) | 2008-08-01 | 2008-08-01 | Ceramic kiln-path heat-recovering semiconductor thermal difference generation method and apparatus |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103024631A (en) * | 2012-12-18 | 2013-04-03 | 广东欧珀移动通信有限公司 | Method and device of noise reduction of earphone |
| CN103078560A (en) * | 2013-01-10 | 2013-05-01 | 天津大学 | Semiconductor temperature difference power generation system |
| CN104578976A (en) * | 2014-12-31 | 2015-04-29 | 常熟市第二热电有限公司 | Thermal power plant waste heat thermoelectric power generation system |
| CN104702148A (en) * | 2013-12-09 | 2015-06-10 | 中冶长天国际工程有限责任公司 | Power supply unit and power supply system |
| CN106130409A (en) * | 2016-08-29 | 2016-11-16 | 北京航天长城节能环保科技有限公司 | Molten tin bath bottom cooling electricity generation system |
| CN107634679A (en) * | 2017-10-19 | 2018-01-26 | 南京航空航天大学 | Kitchen range batch (-type) thermopile TRT and method of work |
| CN110071662A (en) * | 2019-04-29 | 2019-07-30 | 华中科技大学 | A kind of temperature difference electricity generation device using foam metal recovery waste heat |
| CN112727603A (en) * | 2020-12-09 | 2021-04-30 | 华电电力科学研究院有限公司 | Combined power generation method applied to land desert simple cycle gas turbine power generation and thermoelectric power generation |
| CN113063294A (en) * | 2020-09-16 | 2021-07-02 | 佛山高砂工业窑炉有限公司 | Firing roller kiln with waste heat recovery function and waste heat recovery and conversion method thereof |
| CN113824353A (en) * | 2021-08-18 | 2021-12-21 | 鞍钢股份有限公司 | Green temperature difference power generation device of sintering ignition furnace, use method and power generation method |
| CN116164548A (en) * | 2023-01-13 | 2023-05-26 | 南京华电节能环保股份有限公司 | Self-checking leaks formula coke oven flue gas waste heat recovery heat exchanger |
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2008
- 2008-08-01 CN CNA2008100213657A patent/CN101325385A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103024631A (en) * | 2012-12-18 | 2013-04-03 | 广东欧珀移动通信有限公司 | Method and device of noise reduction of earphone |
| CN103078560A (en) * | 2013-01-10 | 2013-05-01 | 天津大学 | Semiconductor temperature difference power generation system |
| CN104702148A (en) * | 2013-12-09 | 2015-06-10 | 中冶长天国际工程有限责任公司 | Power supply unit and power supply system |
| CN104578976A (en) * | 2014-12-31 | 2015-04-29 | 常熟市第二热电有限公司 | Thermal power plant waste heat thermoelectric power generation system |
| CN106130409A (en) * | 2016-08-29 | 2016-11-16 | 北京航天长城节能环保科技有限公司 | Molten tin bath bottom cooling electricity generation system |
| CN107634679B (en) * | 2017-10-19 | 2023-05-26 | 南京航空航天大学 | Intermittent thermopile power generation method for kitchen range |
| CN107634679A (en) * | 2017-10-19 | 2018-01-26 | 南京航空航天大学 | Kitchen range batch (-type) thermopile TRT and method of work |
| CN110071662A (en) * | 2019-04-29 | 2019-07-30 | 华中科技大学 | A kind of temperature difference electricity generation device using foam metal recovery waste heat |
| CN113063294A (en) * | 2020-09-16 | 2021-07-02 | 佛山高砂工业窑炉有限公司 | Firing roller kiln with waste heat recovery function and waste heat recovery and conversion method thereof |
| CN112727603A (en) * | 2020-12-09 | 2021-04-30 | 华电电力科学研究院有限公司 | Combined power generation method applied to land desert simple cycle gas turbine power generation and thermoelectric power generation |
| CN113824353A (en) * | 2021-08-18 | 2021-12-21 | 鞍钢股份有限公司 | Green temperature difference power generation device of sintering ignition furnace, use method and power generation method |
| CN113824353B (en) * | 2021-08-18 | 2024-01-09 | 鞍钢股份有限公司 | Green color temperature difference power generation device of sintering ignition furnace, using method and power generation method |
| CN116164548A (en) * | 2023-01-13 | 2023-05-26 | 南京华电节能环保股份有限公司 | Self-checking leaks formula coke oven flue gas waste heat recovery heat exchanger |
| CN116164548B (en) * | 2023-01-13 | 2023-08-15 | 南京华电节能环保股份有限公司 | Self-checking leaks formula coke oven flue gas waste heat recovery heat exchanger |
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Open date: 20081217 |