CN201252112Y - Ceramic kiln gate waste heat recovery semi-conductor temperature difference power generator - Google Patents
Ceramic kiln gate waste heat recovery semi-conductor temperature difference power generator Download PDFInfo
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- CN201252112Y CN201252112Y CNU2008200419388U CN200820041938U CN201252112Y CN 201252112 Y CN201252112 Y CN 201252112Y CN U2008200419388 U CNU2008200419388 U CN U2008200419388U CN 200820041938 U CN200820041938 U CN 200820041938U CN 201252112 Y CN201252112 Y CN 201252112Y
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/10—Efficient use of energy, e.g. using compressed air or pressurized fluid as energy carrier
- Y02P80/15—On-site combined power, heat or cool generation or distribution, e.g. combined heat and power [CHP] supply
Abstract
The utility model relates to a ceramic kiln gate waste heat recovery semi-conductor temperature difference power generator which is characterized in that a semi-conductor temperature difference power generating module is clamped between a heat collecting plate and a radiating fin; the heat collecting plate is tightly adhered to a hot surface on the lower side of the semi-conductor temperature difference power generating module; the radiating fin with a rib is tightly adhered to a cold surface on the upper side of the semi-conductor temperature difference power generating module; the heat collecting plate, the radiating fin with the rib and the semi-conductor temperature difference power generating module are fastened by bolts; the radiating fin is made into a thin plate with the straight rib; and an isolation cover is added above the radiating fin. The ceramic kiln gate waste heat recovery semi-conductor temperature difference power generator has the advantages that the power generator can directly convert the recovered waste heat into electric energy, so that the power generation has no noise, no abrasion and no media leakage, and the power generator has small size and light weight, is convenient to be moved and maintained, has long service life and the like.
Description
Technical field
The utility model relates to the ceramic kiln-path heat-recovering semiconductor thermal difference generation device, is to be converted to core technology with thermoelectricity, and reclaiming generating with the industrial ceramics using residual heat from kiln furnace is the new energy development applied technical field of target.
Background technology
China is power consumption big country, the industrial exhaust heat enormous amount, no matter be solid-state, gaseous state, that liquid state all has a large amount of industrial exhaust heats to have is to be recycled, thereby these waste heats in the enterprise production process recycled for energy efficiency very large society, economic benefit are arranged.The ceramic component that the industrial ceramics kiln is produced, fire finish after temperature higher, cool off, ceramic component will move a quite long segment distance in the kiln road in this process, gives out the temperature that is cooled to process stipulation behind a large amount of heats.This part heat does not also reclaim at present at home, and this device is recycled it at this part waste heat exactly.
Summary of the invention
The utility model provides a ceramic kiln-path heat-recovering semiconductor thermal difference generation device, the waste heat that is intended to ceramic component that industrial ceramics manufacturing enterprise is produced reclaims and generates electricity, and solves in the ceramic kiln heat recovery problem of ceramic component in natural cooling process in the kiln road.
Technical solution of the present utility model: ceramic kiln-path heat-recovering semiconductor thermal difference generation device, its structure are to comprise semi-conductor thermo-electric generation module, thermal-arrest plate, fin with ribbing; Wherein semi-conductor thermo-electric generation module is clipped in the middle of thermal-arrest plate and the fin with ribbing, the thermal-arrest plate is close to the hot side of semi-conductor thermo-electric generation module downside, fin with ribbing is close to the huyashi-chuuka (cold chinese-style noodles) of semi-conductor thermo-electric generation module upside, and thermal-arrest plate, fin with ribbing are with bolted together.Described fin with ribbing is the fin that is covered with certain (fin height is looked temperature in the kiln road, heat dissipation capacity is different and different, and calculating is determined as the case may be) height on the plate-shape metal sheet, in order to increase area of dissipation.For preventing that the blower fan air-supply from influencing the natural cooling of pottery in the kiln road, adds a cage on fin with ribbing.
Advantage of the present utility model: waste heat can be directly changed into electric energy, need not earlier thermal power transfer to be become mechanical energy by traditional mode, again mechanical energy is converted to the complex process of electric energy, thereby improved the reliability and the useful life of conversion efficiency of thermoelectric and generator; Compare with other forms of waste-heat recovery device, the present invention is a kind of all solid state power conversion mode, has in power generation process noiselessness, does not have wearing and tearing, no dielectric leakage, volume are little, in light weight, conveniently moving, long service life; Apparatus of the present invention are simple in structure, are convenient to processing, and utilize industrial afterheat power generation, can reduce enterprise energy consumption, meet national industrial policies, are easy to apply.
Description of drawings
Accompanying drawing 1 is a cross section structure schematic diagram of the present utility model.
Accompanying drawing 2 is semiconductor thermoelectric effect principle figure.
Among the figure 1 is thermal-arrest plate, the 2nd, semi-conductor thermo-electric generation module, 3 fin with ribbing, the 4th, cage, the 5th, refractory ceramics device (as the ceramic floor brick), the 6th, heat energy, the 7th, high temperature conductor, the 8th, cryoconductor, the 9th, electric conductor, the 10th, release heat (hot junction), the 11st absorbs heat (cold junction), the 12nd, P﹠amp; N type semiconductor, the 13rd, electrical insulator, the 14th, electron stream.
Embodiment
Contrast accompanying drawing 1, its structure comprises thermal-arrest plate 1, semi-conductor thermo-electric generation module 2, fin 3 with ribbing, cage 4.Wherein semi-conductor thermo-electric generation module 2 is clipped in the middle of thermal-arrest plate 1 and the fin with ribbing 3, thermal-arrest plate 1 is close to the downside of semi-conductor thermo-electric generation module 2 hot sides, fin 3 with ribbing is close to the upside of semi-conductor thermo-electric generation module 2 huyashi-chuuka (cold chinese-style noodles), semi-conductor thermo-electric generation module 2, thermal-arrest plate 1, fin 3 with ribbing so that reduce contact heat resistance as far as possible, improves the efficient that heat is transmitted with bolted together.Semi-conductor thermo-electric generation module closely is clipped in the middle of heat collector and the radiator.Cage 4 is buckled on the fin, forms the air channel.
Described semi-conductor thermo-electric generation module 2, form by polylith semiconductor power-generating chip, every chip block is by a plurality of semiconductor PNs be in series (referring to Fig. 3), its electricity generating principle is based on the Bezier effect, electronics in the semi-conducting material can flow to low-temperature end from temperature end under the driving of temperature difference, thereby forms electrical potential difference.
Described thermal-arrest plate 2 is the modules of collecting heat energy, is located at the below of whole device, and it directly receives the heat that ceramic component gives off, again with the hot side of heat exchange pattern with heat transferred semiconductor electricity generation module.The thermal-arrest plate adopts bigger metal material of conductive coefficient such as aluminium etc., so that the quick transmission of heat.
Described fin with ribbing 3 is modules that the heat with the semiconductor module huyashi-chuuka (cold chinese-style noodles) distributes, and is arranged in the upside of semi-conductor thermo-electric generation module, it is a thin plate with ribbing, add cage above, blower fan is blown in cage during work, relies on gas forced-convection heat transfer mode to take away heat.
Ceramic kiln-path heat-recovering semiconductor thermal difference generation method, with the ceramic component of dissipate excess heat as thermal source, the ceramic component operation is through thermal-arrest plate 1 below, and thermal-arrest plate 1 absorbs the heat that it radiates, and the heat transferred of collecting is arrived the semi-conductor thermo-electric generation module hot side; Fin 3 with ribbing is arranged in semiconductor electricity generation module 1 huyashi-chuuka (cold chinese-style noodles) upside, air skims over fin and takes away heat, thereby fin can be cooled to huyashi-chuuka (cold chinese-style noodles) a temperature lower than hot side, both ends of the surface at semi-conductor thermo-electric generation module 1 produce a bigger temperature difference like this, under the ordering about of Bezier effect, the electronics in the semi-conductor thermo-electric generation module 1 flows to low-temperature end from temperature end, forms electrical potential difference at cold junction, after voltage stabilizing rectification and AC-DC conversion, can connect load and use as power supply.
To slow cooling section ceramic component in the ceramic kiln-path waste heat reclaim, be specific embodiment that this device is used.The ceramic component that bakes, carries out will giving out a large amount of heats during the natural cooling in the kiln road also up to more than 600 ℃ in the slow cooling section temperature.This device is arranged in the kiln road, and ceramic component gives out heat in motion process, after the thermal-arrest plate absorbs these heats, it is delivered to the hot side of semi-conductor thermo-electric generation module.The hot side of semi-conductor thermo-electric generation module can be with heat transferred to huyashi-chuuka (cold chinese-style noodles), huyashi-chuuka (cold chinese-style noodles) is with the heat transferred fin, the fin top adds a cage, form the air channel, blower fan is blown in cage, fin is cooled, and the heat that huyashi-chuuka (cold chinese-style noodles) passes over is pulled away, and two end faces at semi-conductor thermo-electric generation module have just formed a bigger temperature difference like this.Because the Bezier effect, semiconductor module will produce electrical potential difference.By circuit this electrical potential difference output promptly be can be used as power supply.
Semi-conductor thermo-electric generation module 2 is core components of this device, and it can convert temperature difference to electrical potential difference and be about to thermal power transfer and become electric energy.Its operation principle is based on the Bezier effect of semi-conducting material:
See Fig. 2, in P (N) N-type semiconductor N, the hole of temperature end (electronics) concentration ratio low-temperature end is big, and under the driving of this concentration gradient, hole (electronics) can spread to low-temperature end from temperature end, thereby form a kind of electrical potential difference owing to the thermal diffusion effect.The hot junction of P type and N type semiconductor is linked to each other, then can obtain a voltage at cold junction, such PN junction just can utilize the temperature difference between high temperature heat source and the low-temperature heat source directly to change heat energy into electric energy.
Contrast Fig. 3, shown the schematic diagram of semi-conductor thermo-electric generation module among the figure, temperature difference makes each to producing electrical potential difference in the PN junction, will be much to being together in series, just can obtain sufficiently high voltage, and become a thermal generator.
Claims (1)
1, ceramic kiln-path heat-recovering semiconductor thermal difference generation device, it is characterized in that semi-conductor thermo-electric generation module is clipped in the middle of thermal-arrest plate and the fin, the thermal-arrest plate is close to the hot side of semi-conductor thermo-electric generation module downside, fin with ribbing is close to the huyashi-chuuka (cold chinese-style noodles) of semi-conductor thermo-electric generation module upside, thermal-arrest plate, formula fin with ribbing and semi-conductor thermo-electric generation module are with bolted together, described fin is made the thin plate that has straight rib, adds cage above fin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200419388U CN201252112Y (en) | 2008-08-01 | 2008-08-01 | Ceramic kiln gate waste heat recovery semi-conductor temperature difference power generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200419388U CN201252112Y (en) | 2008-08-01 | 2008-08-01 | Ceramic kiln gate waste heat recovery semi-conductor temperature difference power generator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201252112Y true CN201252112Y (en) | 2009-06-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200419388U Expired - Fee Related CN201252112Y (en) | 2008-08-01 | 2008-08-01 | Ceramic kiln gate waste heat recovery semi-conductor temperature difference power generator |
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| Country | Link |
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| CN (1) | CN201252112Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263529A (en) * | 2010-05-31 | 2011-11-30 | 陈瑞贞 | Thermoelectric conversion module |
| CN104702149A (en) * | 2013-12-09 | 2015-06-10 | 中冶长天国际工程有限责任公司 | Power supply |
| CN112566451A (en) * | 2020-11-13 | 2021-03-26 | 珠海格力电器股份有限公司 | Heat abstractor and contain its electrical equipment |
-
2008
- 2008-08-01 CN CNU2008200419388U patent/CN201252112Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263529A (en) * | 2010-05-31 | 2011-11-30 | 陈瑞贞 | Thermoelectric conversion module |
| CN104702149A (en) * | 2013-12-09 | 2015-06-10 | 中冶长天国际工程有限责任公司 | Power supply |
| CN104702149B (en) * | 2013-12-09 | 2017-04-12 | 中冶长天国际工程有限责任公司 | Power supply |
| CN112566451A (en) * | 2020-11-13 | 2021-03-26 | 珠海格力电器股份有限公司 | Heat abstractor and contain its electrical equipment |
| CN112566451B (en) * | 2020-11-13 | 2022-02-22 | 珠海格力电器股份有限公司 | Heat abstractor and contain its electrical equipment |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090603 Termination date: 20130801 |