CN101324525B - Phase change film micro-area spectrum measuring device and measuring method - Google Patents

Phase change film micro-area spectrum measuring device and measuring method Download PDF

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Publication number
CN101324525B
CN101324525B CN 200810040993 CN200810040993A CN101324525B CN 101324525 B CN101324525 B CN 101324525B CN 200810040993 CN200810040993 CN 200810040993 CN 200810040993 A CN200810040993 A CN 200810040993A CN 101324525 B CN101324525 B CN 101324525B
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lens
spectrometer
photomultiplier
light
computing machine
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CN101324525A (en
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翟凤潇
魏劲松
王阳
吴谊群
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Abstract

The invention relates to a phase change film micro-area spectrum measuring device and a measuring method, wherein the device comprises a light source, a diaphragm, a light chopper, a second semi-reflecting and semi-transmitting mirror, a third semi-reflecting and semi-transmitting mirror, an objective lens, an imaging lens, a first spectrometer, a first photoelectric detector, a phase-locked amplifier, a second photoelectric detector, a second spectrometer, a second lens, a third lens, an acousto-optic device, a fourth lens, a beam expander, a laser and a computer. Can be used for evaluating the micro-area optical response characteristic and the photo-thermal stability of the phase change film.

Description

Phase-change thin film micro-zone spectral measurement device and measuring method
Technical field
The present invention relates to optical thin film, particularly a kind of phase-change thin film micro-zone spectrum test device and measuring method.
Technical background
The variation of spectrum comes from the phase transformation of the structure of matter, therefore can study the variation of the structure of matter by the measurement of substance spectra.Often error is very big and the normal optical spectrometer is for the measurement of the tiny area of micron dimension size.For phase change film material, generally be method research structure phase transformation by heating anneal, if but use small laser beam heats, measure with the normal optical spectrometer and then be difficult to realize small phase change region location.Document (referring to document 1, Guo Honglian, Cheng Bingying etc., the application of microscopic spectrum technology in cell biology, the quantum electronics newspaper, Vol.19, No3 2002:223-225) has reported a kind of spectrometer that the cell microcell is measured that is used for.Though can be used for the spectral analysis of microsize testing sample, have the problems referred to above equally for the micro-structure analysis of phase-change material.
Summary of the invention
The purpose of this invention is to provide a kind of phase-change thin film micro-zone spectral measurement device and measuring method, this device not only can be measured the transmission and the reflection of the tiny area of testing sample micron dimension, the spectrum of phase-change material behind all right real-time in-situ measurement Stimulated Light pre-irradiation.
Technical solution of the present invention is:
A kind of phase-change thin film micro-zone spectral measurement device, be characterized in: this device is by light source, diaphragm, chopper, second half-reflecting half mirror, the 3rd half-reflecting half mirror, object lens, imaging len, first lens, first spectrometer, first photodetector, lock-in amplifier, second photodetector, second spectrometer, second lens, the 3rd lens, acousto-optical device, the 4th lens, beam expanding lens, laser instrument and computing machine constitute, its position relation is as follows: by the light of described light source outgoing through diaphragm, modulation by chopper, again successively through second half-reflecting half mirror, the light that the 3rd half-reflecting half mirror sees through shines on the surface of the sample on the sample stage through object lens focusing, the light that sees through described sample enters first spectrometer through the imaging len and first lens, and spectral signal is surveyed by first photodetector; The light that is reflected by described sample is back into picture through described object lens, then after the reflection of described the 3rd half-reflecting half mirror, focusing through second lens enters described second spectrometer, the signal of spectrum is surveyed by second photodetector, the output terminal of described first photodetector and second photodetector links to each other with the input end of lock-in amplifier, second output terminal of described first photodetector and second photodetector links to each other with computing machine, the 3rd input end of the described lock-in amplifier of output termination of this computing machine, this lock-in amplifier reference input connects described chopper, is the 3rd lens successively in the reflected light direction of described second half-reflecting half mirror, acousto-optical device, the 4th lens, beam expanding lens and laser instrument.
Described testing sample places on the D translation platform.
Between the described chopper and second half-reflecting half mirror, be provided with first half-reflecting half mirror, attenuator and ccd detector arranged successively in the reflected light direction of described first half-reflecting half mirror.
Described laser instrument is the He-Ne laser instrument.
Utilize above-mentioned phase-change thin film micro-zone spectral measurement device to carry out the method for phase-change thin film micro-zone spectral measurement, comprise the following steps:
1. link to each other with the reference input of lock-in amplifier with the frequency output signal output terminal of signal wire described chopper; The signal output part of first photomultiplier and second photomultiplier is linked to each other with the signal input part of described lock-in amplifier; With Serial Port Line first spectrometer, second spectrometer and lock-in amplifier are linked to each other with computer by serial;
2. open the power supply of each instrument in turn, open the Control Software on the computing machine, guarantee that serial ports connects; The parameter of first spectrometer, second spectrometer and lock-in amplifier is set, starts first spectrometer and second spectrometer resets grating, treat light stability, adjust light path;
3. earlier do not place testing sample on described D translation platform, first photomultiplier is surveyed described first spectrometer, the reference signal that record sees through, and with this reference signal data storage that sees through on described hard disc of computer;
4. on described D translation platform, place a catoptron, adjust second lens, enter the slit of described second spectrometer after making light by mirror reflects through the reflection of described the 3rd half-reflecting half mirror, by second lens focus, survey the spectrum of described second spectrometer by second photomultiplier, obtain the reference signal of reflection, and the reference signal data storage that will reflect is on described hard disc of computer;
5. on described D translation platform, place described testing sample, make the focus of light beam of light source focus on the surface of testing sample by fine setting, and described first lens of adjustment suitably, hot spot is radiated on the slit of first spectrometer, to collect stronger light signal, sweep limit is set, notes transmitted spectrum scanning and by first photomultiplier, the transmittance spectra data of the testing sample that is obtained is kept on the described hard disc of computer;
6. adjust second lens, hot spot is radiated on the slit of second spectrometer, to collect stronger light signal, sweep limit is set, note reflectance spectrum scanning and by second photomultiplier, the reflected spectrum data of the testing sample that is obtained is kept on the hard disk of described computing machine;
7. computing machine carries out division arithmetic with the transmittance spectra data of testing sample and transmission reference signal and obtains the transmissivity spectrum;
8. computing machine carries out division arithmetic with the reflected spectrum data of testing sample spectrum with described reflection reference signal and obtains reflectivity spectral.
In order to obtain the spectrum behind the laser irradiation microcell, also comprise the following steps:
9. open described laser instrument, laser is through described beam expanding lens, the 4th lens, acousto-optical device and the 3rd lens, the pulsewidth of laser is by the control of the function generator of described acousto-optical device, through the laser radiation of ovennodulation on testing sample the position and the position of the irradiation of the light beam of described light source overlap:
10. repeat 4. described~8. step again, obtain transmissivity spectrum and reflectivity spectral behind the laser irradiation microcell again.Described testing sample places on the D translation platform.
Technique effect of the present invention:
1, the microscopic spectrum that this proving installation can the testing film testing sample comprises microcell transmitted spectrum and reflectance spectrum.Can change the microcell scope with the object lens of different numerical apertures, utilize the object lens of numerical aperture 0.65 in this example, its minimum test specification can arrive 3 microns.Can pass through CCD observing system, Real Time Observation testing sample surface.
2, transmitted spectrum and the reflectance spectrum that this proving installation can the small phase change region of in-situ test induced with laser phase-change material added the laser pumping system of variable impulse width in this proving installation; Laser focuses on the laggard acousto-optic modulator of going into through expanding bundle, and the pulsewidth of modulation can be by the function generator control of guide sound optical device.The position of laser radiation on testing sample and the position coincidence of light source irradiation through ovennodulation.Can test testing sample like this under the different shooting conditionss of laser, comprise the microcell transmitted spectrum and the reflectance spectrum of the induced with laser phase transformation front and back of different laser powers, pulsewidth, repetition frequency, effect number of times.
3, apparatus of the present invention have attenuator and ccd detector successively in the reflected light direction of described first half-reflecting half mirror, can change by CCD home position observation testing sample film in measuring process.
4, this device utilizes the signal to noise ratio (S/N ratio) of lock-in amplifier raising signal, in order to the feeble signal of measuring in the noise.
Description of drawings
Fig. 1 is the structural representation of phase-change thin film micro-zone spectral measurement device embodiment of the present invention
Fig. 2 is the transmitted spectrum with a kind of phase change film material of spectrometer measurement of the present invention
Embodiment
An embodiment below in conjunction with accompanying drawing of the present invention provided describes in further detail its structure and measuring process.
See also Fig. 1 earlier, Fig. 1 is the structural representation of phase-change thin film micro-zone spectral measurement device embodiment of the present invention, present embodiment phase-change thin film micro-zone spectral measurement device, this device is by light source, diaphragm, chopper, first half-reflecting half mirror 4, second half-reflecting half mirror 5, the 3rd half-reflecting half mirror 6, object lens 7, imaging len 9, first lens 10, first spectrometer 11, first photodetector 12, lock-in amplifier 13, second photodetector 14, second spectrometer 15, second lens 16, the 3rd lens 17, acousto-optical device 18, the 4th lens 19, beam expanding lens 20, laser instrument 21, attenuator 22, ccd detector 23 and computing machine 24 constitute, its position relation is as follows: by the light of described light source 1 outgoing through diaphragm 2, modulation by chopper 3, again successively through second half-reflecting half mirror 5, the light that the 3rd half-reflecting half mirror 6 sees through focuses on through object lens 7 and shines on the surface of the sample 8 on the sample stage, the light that sees through described sample 8 enters first spectrometer 11 through the imaging len 9 and first lens 10, and spectral signal is surveyed by first photodetector 12; Light by described sample 8 reflections is back into picture through described object lens 7, then after the reflection of described the 3rd half-reflecting half mirror 6, focusing through second lens 16 enters described second spectrometer 15, the signal of spectrum is surveyed by second photodetector 14, the output terminal of described first photodetector 12 and second photodetector 14 links to each other with the input end of lock-in amplifier 13, second output terminal of described first photodetector 12 and second photodetector 14 links to each other with computing machine 24, the 3rd input end of the described lock-in amplifier 13 of output termination of this computing machine 24, these lock-in amplifier 13 reference inputs connect described chopper 3, reflected light direction at described first half-reflecting half mirror 4 has attenuator 22 and ccd detector 23 successively, is the 3rd lens 17 successively in the reflected light direction of described second half-reflecting half mirror 5, acousto-optical device 18, the 4th lens 19, beam expanding lens 20 and laser instrument 21.
Described testing sample 8 places on the D translation platform.Described laser instrument (21) is the He-Ne laser instrument.
Utilize described phase-change thin film micro-zone spectral measurement device embodiment to carry out the method for phase-change thin film micro-zone spectral measurement, comprise the following steps:
1. link to each other with the reference input of lock-in amplifier 13 with the frequency output signal output terminal of signal wire described chopper 3; The signal output part of first photomultiplier 12 and second photomultiplier 14 is linked to each other with the signal input part of described lock-in amplifier 13; With Serial Port Line first spectrometer 11, second spectrometer 15 are linked to each other with the serial ports of lock-in amplifier 13 with computing machine 24;
2. open the power supply of each instrument in turn, open the Control Software on the computing machine 24, guarantee that serial ports connects; The parameter of first spectrometer 11, second spectrometer 15 and lock-in amplifier 13 is set, starts first spectrometer 11 and second spectrometer 15 resets grating, treat light stability, adjust light path;
3. on described D translation platform, do not place earlier testing sample 8, the first photomultipliers 12 and survey described first spectrometer 11, the reference signal that record sees through, and with this reference signal data storage that sees through on described computing machine 24 hard disks;
4. on described D translation platform, place a catoptron, adjust second lens 16, make the slit that enters described second spectrometer 15 after focusing on through the reflection of described the 3rd half-reflecting half mirror 6, by second lens 16 by the light of mirror reflects, survey the spectrum of described second spectrometer 15 by second photomultiplier 14, obtain the reference signal of reflection, and the reference signal data storage that will reflect is on described computing machine 24 hard disks;
5. on described D translation platform, place described testing sample 8, make the focus of light beam of light source focus on the surface of testing sample 8 by fine setting, and described first lens 10 of adjustment suitably, hot spot is radiated on the slit of first spectrometer 11, to collect stronger light signal, sweep limit is set, notes transmitted spectrum scanning and by first photomultiplier 12, the transmittance spectra data of the testing sample 8 that is obtained is kept on described computing machine 24 hard disks;
6. adjust second lens 16, hot spot is radiated on the slit of second spectrometer 15, to collect stronger light signal, sweep limit is set, note reflectance spectrum scanning and by second photomultiplier 14, the reflected spectrum data of the testing sample 8 that is obtained is kept on the hard disk of described computing machine 24;
7. computing machine 24 carries out division arithmetic with the transmittance spectra data of testing sample and transmission reference signal and obtains the transmissivity spectrum;
8. computing machine 24 carries out division arithmetic with the reflected spectrum data of testing sample spectrum with described reflection reference signal and obtains reflectivity spectral.
In order to obtain the spectrum behind the laser irradiation microcell, the method for described phase-change thin film micro-zone spectral measurement also comprises the following steps:
9. open described laser instrument 21, laser is through described beam expanding lens 20, the 4th lens 19, acousto-optical device 18 and the 3rd lens 17, the pulsewidth of laser is by the control of the function generator of described acousto-optical device 18, through the laser radiation of ovennodulation on testing sample 8 the position and the position of the irradiation of the light beam of described light source 1 overlap:
10. repeat above-mentioned 4.~8. step again, obtain transmissivity spectrum and reflectivity spectral behind the laser irradiation microcell again.
Fig. 2 is the transmitted spectrum with a kind of phase change film material of spectrometer measurement of the present invention, and its hot spot is about 4 microns.Wherein curve 1 is prelaser transmission spectrum, and curve 2 is postradiation transmission spectral line.

Claims (6)

1. phase-change thin film micro-zone spectral measurement device, it is characterized in that: this device is by light source (1), diaphragm (2), chopper (3), second half-reflecting half mirror (5), the 3rd half-reflecting half mirror (6), object lens (7), imaging len (9), first lens (10), first spectrometer (11), first photomultiplier (12), lock-in amplifier (13), second photomultiplier (14), second spectrometer (15), second lens (16), the 3rd lens (17), acousto-optical device (18), the 4th lens (19), beam expanding lens (20), laser instrument (21) and computing machine (24) constitute, its position relation is as follows: by the light of described light source (1) outgoing through diaphragm (2), modulation by chopper (3), again successively through second half-reflecting half mirror (5), the light that the 3rd half-reflecting half mirror (6) sees through focuses on through object lens (7) and shines on the surface of the sample (8) on the sample stage, the light that sees through described sample (8) enters first spectrometer (11) through imaging len (9) and first lens (10), and spectral signal is surveyed by first photomultiplier (12); Light by described sample (8) reflection is back into picture through described object lens (7), then after the reflection of described the 3rd half-reflecting half mirror (6), focusing through second lens (16) enters described second spectrometer (15), the signal of spectrum is surveyed by second photomultiplier (14), the output terminal of described first photomultiplier (12) and second photomultiplier (14) links to each other with the input end of lock-in amplifier (13), second output terminal of described first photomultiplier (12) and second photomultiplier (14) links to each other with computing machine (24), the 3rd input end of the described lock-in amplifier of output termination (13) of this computing machine (24), this lock-in amplifier (13) reference input connects described chopper (3), is the 3rd lens (17) successively in the reflected light direction of described second half-reflecting half mirror (5), acousto-optical device (18), the 4th lens (19), beam expanding lens (20) and laser instrument (21).
2. phase-change thin film micro-zone spectral measurement device according to claim 1 is characterized in that described testing sample (8) places on the D translation platform.
3. phase-change thin film micro-zone spectral measurement device according to claim 1, it is characterized in that between described chopper (3) and second half-reflecting half mirror (5), being provided with first half-reflecting half mirror (4), attenuator (22) and ccd detector (23) are arranged successively in the reflected light direction of described first half-reflecting half mirror (4).
4. phase-change thin film micro-zone spectral measurement device according to claim 1 is characterized in that described laser instrument (21) is the He-Ne laser instrument.
5. utilize the described phase-change thin film micro-zone spectral measurement device of claim 2 to carry out the method for phase-change thin film micro-zone spectral measurement, it is characterized in that comprising the following steps:
1. link to each other with the reference input of lock-in amplifier (13) with the frequency output signal output terminal of signal wire described chopper (3); The signal output part of first photomultiplier (12) and second photomultiplier (14) is linked to each other with the signal input part of described lock-in amplifier (13); With Serial Port Line first spectrometer (11), second spectrometer (15) and the serial ports of lock-in amplifier with computing machine (24) are linked to each other;
2. open the power supply of each instrument in turn, open the Control Software on the computing machine (24), guarantee that serial ports connects; The parameter of first spectrometer (11), second spectrometer (15) and lock-in amplifier (13) is set, starts first spectrometer (11) and second spectrometer (15) resets grating, treat light stability, adjust light path;
3. on described D translation platform, do not place earlier testing sample (8), first photomultiplier (12) is surveyed described first spectrometer (11), the reference signal that sees through of record, and with this reference signal data storage that sees through on described computing machine (24) hard disk;
4. on described D translation platform, place a catoptron, adjust second lens (16), make the slit that enters described second spectrometer (15) after focusing on through the reflection of described the 3rd half-reflecting half mirror (6), by second lens (16) by the light of mirror reflects, survey the spectrum of described second spectrometer (15) by second photomultiplier (14), obtain the reference signal of reflection, and the reference signal data storage that will reflect is on described computing machine (24) hard disk;
5. on described D translation platform, place described testing sample (8), make the focus of light beam of light source focus on the surface of testing sample (8) by fine setting, and adjustment described first lens (10) suitably, hot spot is radiated on the slit of first spectrometer (11), to collect stronger light signal, sweep limit is set, note transmitted spectrum scanning and by first photomultiplier (12), the transmittance spectra data of the testing sample that is obtained (8) is kept on described computing machine (24) hard disk;
6. adjust second lens (16), hot spot is radiated on the slit of second spectrometer (15), to collect stronger light signal, sweep limit is set, note reflectance spectrum scanning and by second photomultiplier (14), the reflected spectrum data of the testing sample that is obtained (8) is kept on the hard disk of described computing machine (24);
7. computing machine (24) carries out division arithmetic with the transmittance spectra data of testing sample and transmission reference signal and obtains the transmissivity spectrum;
8. computing machine (24) carries out division arithmetic with the reflected spectrum data of testing sample spectrum with described reflection reference signal and obtains reflectivity spectral.
6. the method for phase-change thin film micro-zone spectral measurement according to claim 5 is characterized in that also comprising the following steps, to obtain the spectrum behind the laser irradiation microcell:
9. open described laser instrument (21), laser is through described beam expanding lens (20), the 4th lens (19), acousto-optical device (18) and the 3rd lens (17), the pulsewidth of laser is by the control of the function generator of described acousto-optical device (18), through the laser radiation of ovennodulation on testing sample (8) the position and the position of the irradiation of the light beam of described light source (1) overlap:
10. repeat 4. described~8. step again, obtain transmissivity spectrum and reflectivity spectral behind the laser irradiation microcell again.
CN 200810040993 2008-07-25 2008-07-25 Phase change film micro-area spectrum measuring device and measuring method Expired - Fee Related CN101324525B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1752739A (en) * 2005-10-21 2006-03-29 中国科学院上海光学精密机械研究所 Spectrophotometer for quickly measuring spectrum
CN101113949A (en) * 2007-09-07 2008-01-30 中国科学院长春光学精密机械与物理研究所 Micro-section spectral measurement system
CN201251545Y (en) * 2008-07-25 2009-06-03 中国科学院上海光学精密机械研究所 Phase-change film micro-area spectrum measuring device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1752739A (en) * 2005-10-21 2006-03-29 中国科学院上海光学精密机械研究所 Spectrophotometer for quickly measuring spectrum
CN101113949A (en) * 2007-09-07 2008-01-30 中国科学院长春光学精密机械与物理研究所 Micro-section spectral measurement system
CN201251545Y (en) * 2008-07-25 2009-06-03 中国科学院上海光学精密机械研究所 Phase-change film micro-area spectrum measuring device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
郭红莲,等.微区光谱技术在细胞生物学中的应用.量子电子学报19 3.2002,19(3),223-225.
郭红莲,等.微区光谱技术在细胞生物学中的应用.量子电子学报19 3.2002,19(3),223-225. *

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