CN101308866A - Flat panel display with improved white balance and manufacture method - Google Patents
Flat panel display with improved white balance and manufacture method Download PDFInfo
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- CN101308866A CN101308866A CNA2008101102469A CN200810110246A CN101308866A CN 101308866 A CN101308866 A CN 101308866A CN A2008101102469 A CNA2008101102469 A CN A2008101102469A CN 200810110246 A CN200810110246 A CN 200810110246A CN 101308866 A CN101308866 A CN 101308866A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title claims description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
- 239000010703 silicon Substances 0.000 claims abstract description 61
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 70
- 229920005591 polysilicon Polymers 0.000 claims description 70
- 238000002425 crystallisation Methods 0.000 claims description 63
- 230000008025 crystallization Effects 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 109
- 239000010408 film Substances 0.000 description 83
- 230000037230 mobility Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 238000005424 photoluminescence Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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Abstract
The invention discloses a flat panel display which comprises a plurality of pixels. Each of the pixels comprises R, G, and B unit pixels to embody red (R), green (G) and blue (B). And each of the unit pixels comprises a transistor, wherein the transistor of at least one unit pixel in the R, G, B unit pixels comprises a channel region manufactured by silicon layers provided with different film qualities. The invention also relates to a method of manufacturing the flat panel display.
Description
The application is dividing an application of No. 200410032887.9 application for a patent for invention submitting on April 13rd, 2004, and requiring the priority of the korean patent application submitted on April 17th, 2003 2003-24503 number and 2003-24429 number, it is disclosed in here all as a reference.
Technical field
The present invention relates to a kind of panchromatic flat-panel monitor, particularly by using MIC/MILC technology to make the channel layer of the driving transistors in each R, G and B unit picture element have different current transfer rate (current mobilities) thus can realize the flat-panel monitor of white balance and make the method for this flat-panel monitor.
Background technology
Usually, as shown in Figure 1, the Organic Light Emitting Diode of a flat-panel monitor (OLED) comprises a plurality of pixels 100 that are arranged to matrix form.Each pixel 100 is made up of three unit picture elements (unit pixel), that is, and and the unit picture element 110R of an express red (R), the unit picture element 120G of a performance green (G), the unit picture element 130B of a performance blue (B).
Described R unit picture element 110R comprises: (this device comprises a redness (R) luminescent layer for electroluminescence, EL) device 115 in a red electroluminescence; A driving transistors 113 that is used for to described red EL device 115 supply of current; With one be used for switch is fed to the electric current of described red EL device 115 from described driving transistors 113 switching transistor 111.
Described G unit picture element 120G comprises: a green EL device 125, this device comprise a green (G) luminescent layer; A driving transistors 123 that is used for to described green EL device 125 supply of current; With one be used for switch is fed to the electric current of described green EL device 125 from described driving transistors 123 switching transistor 121.
Described B unit picture element 130B comprises: a blue EL device 135, this device comprise a blueness (B) luminescent layer; A driving transistors 133 that is used for to described blue EL device 135 supply of current; With one be used for switch is fed to the electric current of described blue EL device 135 from described driving transistors 133 switching transistor 131.
Routinely, the described driving transistors 113,123 and 133 of the R of one OLED device, G and B unit picture element 110R, 120G and 130B has same size, the ratio W/L that just has the width W and the length L of identical channel layer, and according to the order of their luminous efficiencies, the order of described EL device is B, R and G unit picture element.In the OLED of described routine, because the described driving transistors 113,123 of R, G and B unit picture element 110R, 120G and 130B and 133 channel layer is measure-alike, and the EL device 115,125 of described R, G and B and 135 luminous efficiency differ from one another, so be difficult to realize white balance.
In order to realize described white balance,, should supply an electric current relatively in a small amount, and, should supply an a large amount of relatively electric current for redness and blue EL device with low luminous efficiency for for example green EL device of the EL device with high-luminous-efficiency.
Here, when described driving transistors was in saturation condition, owing to the electric current I d that flows to described EL device by described driving transistors begins to flow, described electric current was expressed as follows:
(1)Id＝CoxμW(Vg-Vth)
2/2L
Therefore, a kind of method that controls flow to the electric current of described EL device in order to realize white balance be make R, G and B unit picture element driving transistors size (just, the ratio W/L of the width W of described channel layer and length L) different, therefore and control flow to the magnitude of current of the EL device of described R, G and B unit picture element.The method that flows to the magnitude of current of described EL device according to described transistorized size Control is disclosed in Japanese laid-open patent and announces among the 2001-109399.In this Japan Patent,, form the size of the driving transistors of described R, G and B unit picture element inequality according to the luminous efficiency of the EL device in each R, G and the B unit picture element.Just, the size of the driving transistors of the unit picture element by making the performance green (G) with high-luminous-efficiency controls flow to the magnitude of current of the EL device of described R, G and B unit picture element less than the size of the driving transistors of the unit picture element of the express red (R) with low relatively luminous efficiency or blue (B).
The another kind of method that realizes described white balance is the varying in size of luminescent layer that makes described R, G and B unit picture element, and this is disclosed in Japanese laid-open patent and announces on 2001-290441 number.In this Japan Patent, according to the luminous efficiency of the EL device of described R, G and B unit picture element, by make light-emitting area different make produce from described R, G and B unit picture element identical luminous.Just, thus the light-emitting area by making R with low luminous efficiency or B unit picture element produces identical luminous on described R, G and B unit picture element greater than the light-emitting area of the G unit picture element with relative high-luminous-efficiency.
But, in the conventional method of above-mentioned realization white balance, it is big that the light-emitting area of the unit picture element with low luminous efficiency in described R, G and the B unit picture element becomes, and perhaps increases the transistorized size that has the unit picture element of low luminous efficiency in described R, G and the B unit picture element.The problem that this can cause the charging area of each unit picture element to increase, and therefore be difficult for the present invention is applied in the high-resolution demonstration.
Summary of the invention
One aspect of the present invention is to provide a kind of flat-panel monitor and manufacture method thereof, wherein can realize white balance and does not increase the area of pixel.
Another aspect of the present invention is to provide a kind of flat-panel monitor and manufacture method thereof, wherein has different current transfer rates by the channel layer that makes driving transistors in R, G and the B unit picture element, can realize white balance.
Another aspect of the present invention is to provide a kind of flat-panel monitor and manufacture method thereof, wherein has the crystallization of different directions by the channel layer that makes driving transistors in R, G and the B unit picture element, can realize white balance.
Another aspect of the present invention is to provide a kind of flat-panel monitor and manufacture method thereof, wherein can be by making the different white balances that realize of resistance value of the channel layer of driving transistors in R, G and the B unit picture element.
Of the present invention also have an aspect to be to provide a kind of flat-panel monitor and manufacture method thereof, wherein different by the length that makes the noncrystalline silicon fiml in the channel layer that is included in each R, G and the driving transistors of B unit picture element, can realize white balance.
According to one exemplary embodiment of the present invention, a kind of flat-panel monitor is provided, comprise a plurality of pixels, wherein each pixel comprises that R, G and B unit picture element are with difference express red (R), green (G) and blue (B), and each unit picture element comprises at least one transistor, and wherein the transistor of at least two unit picture elements in R, G and B unit picture element comprises the channel layer that the current transfer rate is different.
At least one transistor in R, G and B unit picture element comprises a channel layer, and this channel layer has identical size on each pixel.Described R, G and B unit picture element comprise light emitting devices respectively.The transistor of electric current that control is fed to the light emitting devices of each unit picture element is included in all identical channel layer of size on each pixel, and the transistorized current transfer rate of light emitting devices that is used for driving the high-luminous-efficiency of the light emitting devices with described unit picture element is less than the transistorized current transfer rate that is used to drive the light emitting devices with low relatively luminous efficiency.
The transistorized channel layer of described R, G and B unit picture element can be made by the polysilicon film that has different crystallization directions each other.The transistorized channel layer that is used for driving the light emitting devices with the high-luminous-efficiency of described light emitting devices can be by crystallization inducing metalization (metal inducedcrystallization, MIC) polysilicon film is made, and be used to drive light emitting devices with relatively low luminous efficiency transistorized channel layer can (metal inducedlateral crystallization, MILC) polysilicon film be made by metal induced lateral crystallizationization.
Described R, G and B unit picture element also can comprise the light emitting devices by described transistor driving respectively, and described R, G and B unit picture element comprise a switching transistor that is used to drive the driving transistors of light emitting devices and is used to open or turn-off described driving transistors.
The channel layer of the described switching transistor of described R, G and B unit picture element can be made by the MIC polysilicon film.The driving transistors that has in described R, G and the B unit picture element unit picture element of high-luminous-efficiency has a channel layer of being made by the MIC polysilicon film, and the driving transistors with unit picture element of low relatively luminous efficiency has a channel layer of being made by the MILC polysilicon film.
The channel layer of the described switching transistor of described R, G and B unit picture element can be made by the MILC polysilicon film, and the driving transistors that has in described R, G and the B unit picture element high-luminous-efficiency can have a channel layer of being made by the MIC polysilicon film, and the driving transistors with unit picture element of low relatively luminous efficiency can have a channel layer of being made by the MILC polysilicon film.
The switching transistor and the driving transistors that have in described R, G and the B unit picture element unit picture element of high-luminous-efficiency can have the channel layer of being made by the MIC polysilicon film, and driving transistors and switching transistor with unit picture element of low relatively luminous efficiency can have a channel layer of being made by the MILC polysilicon film.
Equally, in a flat-panel monitor that comprises a plurality of pixels, wherein each described pixel comprises R, G and B unit picture element, and each described unit picture element comprises at least one transistor, a kind of method of making this flat-panel monitor is provided, has been included in and forms the silicon fiml of noncrystallineization on the dielectric substrate and formation one first and one the 2nd MILC mask on described noncrystalline silicon fiml.Described method also comprises: deposit MILC metal film on described substrate; Make described amorphous silicon membrane crystallization become a polysilicon film, so that the part corresponding to described first and second masks is passed through the crystallization of MIC method by crystallization of MILC method and remainder; Remove described first and second masks and metal film; And to described polysilicon film composition, and make the transistorized semiconductor layer of a unit picture element having in described R, G and the B unit picture element high-luminous-efficiency be made by the polysilicon film that uses MIC method crystallization, and the transistorized semiconductor layer with unit picture element of low relatively luminous efficiency is made by the polysilicon film that uses MILC method crystallization.
Equally, a kind of flat-panel monitor is provided, comprise a plurality of pixels, each described pixel comprises that R, G and B unit picture element are with difference express red (R), green (G) and blue (B), each described unit picture element comprises a transistor, and wherein the transistor of at least one unit picture element in R, G and B unit picture element comprises a channel region of being made by the silicon layer with different film properties.
The transistor of at least two unit picture elements in R, G and B unit picture element comprises the channel region of being made by the silicon layer of at least a different film properties, and the length difference of the silicon layer with low current mobility in described channel region.
Described R, G and B unit picture element comprise light emitting devices respectively, and do not comprise silicon layer corresponding to the transistorized channel region that in the light emitting devices of described R, G and B unit picture element, has the light emitting devices of minimum luminous efficiency, or comprise that silicon layer with low current mobility and its length are less than the length corresponding to the transistorized channel region of the light emitting devices with relative high-luminous-efficiency with low current mobility.
Described channel region is made by polysilicon layer and noncrystallineization silicon layer, and the silicon layer that has the low current mobility in channel region is made by noncrystallineization silicon layer.
Equally, in a flat-panel monitor that comprises a plurality of pixels, each described pixel comprises that R, G and B unit picture element are with difference express red (R), green (G) and blue (B), each described unit picture element comprises a transistor, unit picture element, and each unit picture element comprises a transistor.A kind of method of making described flat-panel monitor is provided, comprises: on a dielectric substrate, form a noncrystallineization silicon fiml, on described noncrystallineization silicon fiml, be formed for first to the 3rd mask of MILC, and deposit is used for the metal film of MILC on substrate.Described method further comprises becomes a polysilicon film with described noncrystallineization silicon fiml crystallization, so that described noncrystallineization silicon fiml only partly remains under described first to the 3rd mask, remove first to the 3rd mask that is used for MILC and the metal film that is used for MILC, and to described polysilicon film composition, so that the described noncrystallineization silicon fiml that is present between the described polysilicon film forms described R, semiconductor layer on the transistor of G and B unit picture element, wherein said R, the resistance value of the transistorized channel region of G and B unit picture element is decided by the length of the described noncrystallineization silicon fiml that exists between described polysilicon film.
Description of drawings
By and with reference to the accompanying drawings, make those of ordinary skills more understand above-mentioned and further feature and advantage of the present invention to the detailed description of embodiment.
Fig. 1 is R, the G of a conventional flat-panel monitor and the distribution map of B unit picture element;
Fig. 2 A, 2B, 2C and 2D are for making the view according to the method for the driving transistors of R, the G of the embodiment of the invention and B unit picture element;
Relation when Fig. 3 illustrates according to the MIC/MILC method for crystallising between gate voltage and the drain voltage;
Fig. 4 A, 4B, 4C and 4D make the profile of the method for the driving transistors of R, G and B unit picture element in accordance with another embodiment of the present invention.
Embodiment
Accompanying drawing below with reference to the expression embodiment of the invention describes in detail the present invention.But the present invention can be with in different form enforcement and the embodiment that should not be limited in narrating here.On the contrary, these embodiment that are provided are in order to make the disclosure fully and fully, and give full expression to scope of the present invention to those of ordinary skills.In the accompanying drawings, for the sake of clarity, the thickness and the zone of layer all are exaggerated.In whole specification, identical Reference numeral is represented identical parts.
Fig. 2 A, 2B, 2C and 2D are for making the view according to the method for the driving transistors of R, the G of the embodiment of the invention and B unit picture element.The cross-section structure of Fig. 2 A, 2B, 2C and 2D is represented described R, the G of each pixel in the Organic Light Emitting Diode and the driving transistors in the B unit picture element.
With reference to figure 2A, on a dielectric substrate 200, form the resilient coating that does not show among the figure, and on described resilient coating, form a noncrystallineization silicon fiml 210.On described noncrystallineization silicon fiml 210, be formed for a plurality of masks 221 and 225 of MILC, and on the entire substrate surface, form a metal film 230.
The mask 221 and 225 of the described MILC of being used for is formed on the zone 201 and 205 corresponding to described R to be formed and B unit picture element.Do not form on the zone 203 of G unit picture element to be formed owing to be used for the mask of MILC, described metal film 230 is formed with described noncrystallineization silicon fiml 210 and directly contacts.Though use in the present invention oxide-film as MILC with mask 221 and 225, oxide-film as described in also can replacing as other film of light-sensitive surface.
With reference to figure 2B, by carrying out a crystallization process, described noncrystallineization silicon fiml 210 crystallizations become a polysilicon film 240.Here, form described polysilicon film 240 by described MIC and MILC method, wherein corresponding to the part 241 of the polysilicon film 240 of mask 221 via the crystallization of MILC method, and also use the crystallization of MILC method corresponding to the part 245 of mask 225.The part 243 that directly contacts with described metal film 230, the remainder 243 in zone 203 that just comprises described G unit picture element to be formed is via the complete crystallization of MIC method.
With reference to figure 2C, remove the mask 221 that is used for MILC and 225 and described metal film 230 after, mask (not shown) by using a semiconductor layer that is used to form described driving transistors is to described polysilicon film 240 compositions, with the semiconductor layer 251,253 and 255 of the driving transistors that forms described R, G and B unit picture element.Here, the semiconductor layer 251,253 of the driving transistors of described unit picture element is all identical with 255 size.
In described R, G and B unit picture element, the semiconductor layer 251 of the driving transistors of R unit picture element is made of the described polysilicon film 241 by MILC method crystallization.The semiconductor layer 253 of the driving transistors of G unit picture element is made of the described polysilicon film 243 by MIC method crystallization.The semiconductor layer 255 of the driving transistors of B unit picture element is made of the described polysilicon film 245 by MILC method crystallization.
With reference to figure 2D, comprising formation one gate insulating film 260 on described semiconductor layer 251,253 and 255 on the described substrate, on described gate insulating film 260, form the grid 271,273 and 275 of the driving transistors of each unit picture element.Use grid 271,273 and 275 as mask respectively,, form the source/drain region 281,283 and 285 of each driving transistors by carrying out the ion injection that the impurity of desired conduction type is incorporated into described semiconductor layer 251,253 and 255.
Although do not show in the accompanying drawings, on the entire substrate surface, can form an interlayer dielectric.Can be formed for exposing the contact hole of described source/drain region 281,283 and 285 by described interlayer dielectric of etching and gate insulation layer 260, and can form and pass source/drain region that described contact hole is electrically connected with described source/drain region 281,283 and 285, therefore produce described driving transistors.
In the flat-panel monitor of the present invention that the method for stating is in the use made, the described driving transistors of described R, G and B unit picture element can comprise the channel layer with same length L rc, Lgc and Lbc.The driving transistors of described R and B unit picture element can comprise the channel layer of making by with the polysilicon film 241 and 245 of MILC method crystallization respectively, and the driving transistors of described G unit picture element can comprise the channel layer of making by with the polysilicon film 243 of MIC method crystallization.Therefore, the driving transistors of described R, G and B unit picture element can have the channel layer of same size.And the current transfer rate of described channel layer can change according to the crystallization direction of the described channel layer of the driving transistors of described R, G and B unit picture element.
Have the described R of low luminous efficiency and B unit picture element driving transistors described channel layer can by have high current transfer rate, make with the polysilicon film 241 and 245 of MILC method crystallization, and have higher photoluminescence efficiency described G unit picture element driving transistors described channel layer can by have the low current mobility, make with the polysilicon film 243 of MIC method crystallization.
Therefore, according to embodiments of the invention, change the crystallization direction of described channel layer by luminous efficiency according to the EL device of described R, G and B unit picture element, can determine the resistance value of described channel layer, the described channel layer of driving transistors with the described R of relatively low luminous efficiency and B unit picture element is by making according to the polysilicon film of MILC method crystallization, its have with the same direction of channel length on the crystallization direction, horizontal direction just, and therefore have quite low resistance value.Equally, the described channel layer of driving transistors of described G unit picture element with relative high-luminous-efficiency is by making according to the polysilicon film of MIC method crystallization, it has the crystallization direction perpendicular to orientation, vertical direction just, and therefore have quite high resistance value.
Therefore, the channel layer by making described R, G and B unit picture element measure-alike and make their crystallization direction different, and therefore make the current transfer rate differing from each other, can realize white balance of the present invention.
Fig. 3 comprises the view that concerns between the gate voltage of thin-film transistor of the semiconductor layer by MIC and the crystallization of MILC method and the drain voltage.Even Fig. 3 represents to have under the situation of identical size (W/L) and channel direction at described thin-film transistor, according to the fine structure of the polysilicon film of described channel layer, the magnitude of current also can be different.
With reference to figure 3, should be noted that: drain current described in the MILC polycrystalline SiTFT is better than drain current described in the MIC polycrystalline SiTFT with respect to the indicatrix of gate voltage with respect to the indicatrix of gate voltage.Therefore described current transfer rate by the thin-film transistor made from the polysilicon film of MILC method crystallization is higher than the current transfer rate by the thin-film transistor made from the polysilicon film of MIC method crystallization.
Therefore, in one embodiment of the invention, the channel layer of driving transistors with described green institution pixel of relative higher photoluminescence efficiency is made by the MIC polysilicon film, and the channel layer with driving transistors of the described redness of relatively low luminous efficiency and blue unit pixel is made by the MILC polysilicon film.The electric current that is higher than the driving transistors that flows through described green institution pixel by the electric current that makes the driving transistors that flows through described redness or blue unit pixel can be realized white balance.
In one embodiment of the invention, even the luminous efficiency according to the EL device of described R, G and B makes the channel layer of driving transistors be formed by the polysilicon film by MIC and/or the crystallization of MILC method, described MIC and/or MILC method also can be applied to the switching transistor of described R, G and B unit picture element.For example, the channel layer of the switching transistor of all described R, G and B unit picture element can be made of the polysilicon film by described MIC method and/or the crystallization of MILC method.Perhaps, switching transistor with described G unit picture element of higher photoluminescence efficiency can have the channel layer that is made of the polysilicon film by the crystallization of described MIC method, can have the channel layer that is made of the polysilicon film with the crystallization of MILC method and have than the described R of low luminous efficiency or the switching transistor of B unit picture element.The described driving transistors of described R, G and B unit picture element and the semiconductor layer of described switching transistor can have the crystallization direction identical or different with channel direction.
Even the described channel layer of one embodiment of the present of invention is described to by the crystallization of described MIC/MILC method, but the channel layer of the driving transistors of described R, G and B unit picture element can have the method for crystallising that differs from one another, so that can use all crystallization methods that have different current transfer rates each other among the present invention.
Fig. 4 A, 4B, 4C and 4D are the operation cutaway view of the method for the driving transistors of making R, G and B unit picture element in accordance with another embodiment of the present invention.The sectional structure of Fig. 4 A, 4B, 4C and 4D is illustrated in described R, the G of each pixel in the Organic Light Emitting Diode and the driving transistors of B unit picture element.
With reference to figure 4A, although do not show in the accompanying drawings, on a dielectric substrate 400, form a resilient coating, and on described substrate, form a noncrystalline silicon layer 410.On described noncrystallineization silicon layer 410, form a plurality of masks 421,423 and 425 that are used for MILC and reach metal level 430 of formation on the entire substrate surface.
The mask 421,423 and 425 of the described MILC of being used for formed have different width each other, wherein said mask width order from high to low is second mask 423, first mask 421 and the 3rd mask 425.Described first mask 421 is formed on the zone of the driving transistors (113 among Fig. 1) that correspondingly will form the R unit picture element in described R, G and the B unit picture element, and described second mask 423 is formed on the zone of the driving transistors (123 among Fig. 1) that will form described G unit picture element.Described the 3rd mask 425 is formed on the zone of the driving transistors (133 among Fig. 1) that will form described B unit picture element.
With reference to figure 4B, carry out crystallization process, to be polysilicon film 440 with described noncrystalline silicon fiml 410 crystallizations, wherein the part corresponding to the mask 421,423 in the described noncrystalline silicon fiml 410 and 425 becomes polysilicon film 441,443 and 445 by MILC method crystallization.Part between described mask 421,423 and 425, that directly contact with described metal level 430 uses MIC method crystallization to form polysilicon film 447.
Has different width owing to be used for described first to the 3rd mask 421,423 of MILC each other with 425, corresponding to the part of the polysilicon film 440 of described the 3rd mask 425 with a relative narrower width by MILC method crystallization, and respectively by the partly crystallization of MILC method, stay unaltered described noncrystalline silicon fiml 411 and 413 corresponding to the part of described first and second masks 421 with a relative broad width and 423.
Just, among the polysilicon film 440 corresponding to described first mask 421, described noncrystalline silicon fiml 411 is present between the part 441 with the crystallization of MILC method.And among the polysilicon film 440 corresponding to described second mask, described noncrystalline silicon fiml 413 is present between the part 443 with MILC method crystallization.Because the width of described first mask 421 is relatively less than the width of described second mask 423, corresponding to the length of the described noncrystalline silicon fiml 413 of described second mask 423 greater than length corresponding to the described noncrystalline silicon fiml 411 of described first mask 421.
With reference to figure 4C, remove the mask 421,423 that is used for the MILC method and 425 and described metal level 430 after, by use forming mask (not shown) that semiconductor layer uses, be formed for the semiconductor layer 451,453 and 455 of the driving transistors of described R, G and B unit picture element to described polysilicon film 440 compositions.Part 441 by described MILC method crystallization in described polysilicon film 440 and be present in the described semiconductor layer 451 that described noncrystalline silicon fiml 411 between the described part 441 has formed the driving transistors of the described R unit picture element that is used for described R, G and B unit picture element.Part 443 by described MILC method crystallization in described polysilicon film 440 and be present in the described semiconductor layer 453 that described noncrystalline silicon fiml 413 between the described part 443 has formed the driving transistors that is used for described G unit picture element.On the other hand, in described polysilicon film, only formed the described semiconductor layer 455 of the driving transistors that is used for described B unit picture element by the described polysilicon film 445 of described MILC method crystallization.
With reference to figure 4D, comprise gate insulating film 460 of deposit on the surface of described semiconductor layer 451,453 and 455 at whole described substrate.Deposit one electric conducting material is as a metal film on described film 460, and the mask (not shown) that is used to form described grid then forms the grid 471,473 and 475 of the driving transistors of each described R, G and B unit picture element to described electric conducting material composition.Then, use described grid 471,473 and 475 to be injected in described semiconductor layer 451,453 and 455, form the source/drain region 481,483 and 485 of described driving transistors as the high concentration impurities ion of mask with desired conduction type.
Even do not demonstrate in the accompanying drawings, described driving transistors can be by following step manufacturing: form an interlayer dielectric on whole described substrate surface, expose the contact hole of described source/drain region 481,483 and 485 by described interlayer dielectric of etching and 460 formation of described gate insulating film, and source/drain electrode that described contact hole is electrically connected with described source/drain region 481,483 and 485 is passed in formation.
Make by said method according to flat-panel monitor of the present invention in, the channel layer 482 of the driving transistors of described R unit picture element can be made by polysilicon film 441 and noncrystalline silicon fiml 411 with MILC method crystallization.The length L rc of channel layer is the summation of the length L ra of the length L r1 of described polysilicon film 441 and Lr2 and described noncrystalline silicon fiml 411, just, and Lrc=Lr1+Lra+Lr2.The channel layer 484 of the driving transistors of described G unit picture element is made by polysilicon film 443 and noncrystalline silicon fiml 413 with MILC method crystallization.Channel layer total length L gc is the summation of the length L ga of the length L g1 of described polysilicon film 443 and Lg2 and described noncrystalline silicon fiml 413, just, and Lgc=Lg1+Lga+Lg2.The channel layer 486 of the driving transistors of described B unit picture element is by only making with the polysilicon film 445 of MILC method crystallization, and channel layer total length L bc equals the length L b of described polysilicon film 445.
In the driving transistors of described R, G and B unit picture element, because channel layer 482,484 is identical with 486 length, be Lrc=Lgc=Lbc, the resistance value of the channel layer of described driving transistors changes according to the length that is included in the described noncrystalline silicon fiml in each channel layer.And embodiments of the invention can be configured to decide according to the luminous efficiency of the EL device of described R, G and B unit picture element the resistance value of described channel layer, because the channel layer 486 of described B unit picture element with minimum relatively luminous efficiency is by making with the polysilicon film of MILC method crystallization, the resistance value of its channel layer is relatively low.
Equally, the channel layer 482 or 484 with the described R of relative higher photoluminescence efficiency or G unit picture element is included in a noncrystalline silicon fiml between the described polysilicon film, and the resistance value of described channel layer is increased relatively.Because the EL device of described R unit picture element has the luminous efficiency lower than the EL device of described G unit picture element, the length L ra of the described noncrystalline silicon fiml 411 that exists in the channel layer 482 of described R unit picture element is formed the length L ga that is shorter than the described noncrystalline silicon fiml 413 that exists relatively in the channel layer 484 of described G unit picture element.
Therefore, the length of the channel layer of described R, the G in according to a further embodiment of the invention and the driving transistors of B unit picture element is formed when equating, the described noncrystalline silicon fiml that exists in the channel layer of described R, G and the driving transistors of B unit picture element is formed has different length each other.Therefore, the resistance value of the channel layer by making described driving transistors differs from one another and can realize white balance.
According to another embodiment of the invention, handle by carrying out that crystallization is handled so that by described MILC and in described channel layer, to have described noncrystalline silicon fiml, thereby change the resistance value of described channel layer of the driving transistors of described R, G and B unit picture element.But, handle the described MILC technology of replacement by the crystallization that uses other, make described channel layer comprise the different noncrystalline silicon fiml of length each other, change the resistance value of the driving transistors of described R, G and B unit picture element, this method also can be with in the present invention.Although in the channel layer of the driving transistors of described B unit picture element, may not have noncrystalline silicon fiml, the invention is not restricted to above-mentioned structure.But, the present invention even can form a kind of structure, comprising the noncrystalline silicon fiml with a resistance value, this resistance value is in the level that the channel layer that can make described R or G unit picture element is realized white balance.
According to another embodiment of the invention, when carrying out the MILC crystallization,, can carry out a crystallization and handle and to make and in each channel layer, have a noncrystalline silicon fiml by crystallization control temperature or crystallization time.Can form whole channel regions of the switching transistor of described unit picture element with described MILC polysilicon film.The driving transistors of described R and G unit picture element has the noncrystalline silicon fiml between described polysilicon film, and the driving transistors of described B unit picture element can have a channel region of being made by polysilicon film.
In foregoing description of the present invention, do not realize described white balance, but the current transfer rate or the resistance value of the channel layer by changing described R, G and B unit picture element realize described white balance by increasing described elemental area.
Equally, be described polysilicon film by using the MIC/MILC crystallization method that the amorphous silicon membrane crystallization is changed into, so and forming the semiconductor layer of the driving transistors of described R, G with different current transfer rates and B unit picture element, the present invention can be lowered the technology cost and be simplified technology.
Though for illustrative purposes the preferred embodiments of the present invention are disclosed, will be appreciated by those skilled in the art that and under the condition that does not deviate from disclosed scope and spirit of the present invention in claims, can make various modifications, interpolation and alternative.
Claims (8)
1. a flat-panel monitor comprises a plurality of pixels, and each described pixel comprises R, G and B unit picture element with express red (R), green (G) and blueness (B) respectively, and each described unit picture element comprises a transistor,
The transistor of at least one unit picture element comprises the channel region of being made by the silicon layer with different film properties among wherein said R, G and the B unit picture element.
2. flat-panel monitor according to claim 1, the described transistor of at least two unit picture elements comprises the channel region of being made by the silicon layer with at least a different film properties in wherein said R, G and the B unit picture element, and wherein said length difference with silicon layer of low channel region current transfer rate.
3. flat-panel monitor according to claim 1, the transistor of wherein said R, G and B unit picture element comprises the channel layer with equal length.
4. flat-panel monitor according to claim 1, wherein each described R, G and B unit picture element also comprise a light emitting devices respectively, and control comprises the channel layer with equal length to the transistor of the light emitting devices supply of current of described unit picture element.
5. as flat-panel monitor as described in the claim 4, wherein do not comprise silicon layer with low current mobility corresponding to the transistorized channel region that among the light emitting devices of described R, G and B unit picture element, has the light emitting devices of minimum luminous efficiency, or comprise have the low current mobility, its length is than the littler described silicon layer of length corresponding to the transistorized channel region of the light emitting devices with relative high-luminous-efficiency.
6. as flat-panel monitor as described in the claim 3, wherein said channel region is made by a polysilicon layer and a noncrystallineization silicon layer.
7. as flat-panel monitor as described in the claim 3, the described silicon layer that wherein has the low current mobility in described channel region is made by described noncrystallineization silicon layer.
8. method of making flat-panel monitor, described flat-panel monitor comprises a plurality of pixels, each pixel comprises R, G and B unit picture element with express red (R), green (G) and blueness (B) respectively, and each described unit picture element comprises a transistor, and described method comprises:
On a dielectric substrate, form a noncrystalline silicon fiml,
On described noncrystalline silicon fiml, be formed for first mask to the, three masks of metal induced lateral crystallizationization;
Deposit is used for the metal film of metal induced lateral crystallizationization on described substrate;
It is a polysilicon film that described amorphous silicon membrane crystallization is changed into, so that described noncrystalline silicon fiml only partly remains under described first to the 3rd mask;
Remove described first to the 3rd mask and described metal film; And
Described polysilicon film is carried out composition, so that between described polysilicon film, exist noncrystalline silicon fiml to form the transistorized semiconductor layer of described R, G and B unit picture element.
The transistorized channel region of wherein said R, G and B unit picture element has the resistance value by the length decision of the noncrystalline silicon fiml that exists between described polysilicon film.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2003-0024429A KR100496422B1 (en) | 2003-04-17 | 2003-04-17 | Flat Panel Display with improved white balance using MILC |
| KR24429/03 | 2003-04-17 | ||
| KR10-2003-0024503A KR100496423B1 (en) | 2003-04-17 | 2003-04-17 | Flat Panel Display with improved white balance |
| KR24503/03 | 2003-04-17 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2004100328879A Division CN1541038B (en) | 2003-04-17 | 2004-04-13 | Flat panel display with improved white balance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101308866A true CN101308866A (en) | 2008-11-19 |
| CN101308866B CN101308866B (en) | 2011-06-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101102469A Expired - Lifetime CN101308866B (en) | 2003-04-17 | 2004-04-13 | Flat panel display with improved white balance and manufacture method |
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| Country | Link |
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| KR (1) | KR100496423B1 (en) |
| CN (1) | CN101308866B (en) |
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|---|---|---|---|---|
| JP2975973B2 (en) * | 1993-08-10 | 1999-11-10 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method thereof |
| US6278130B1 (en) * | 1998-05-08 | 2001-08-21 | Seung-Ki Joo | Liquid crystal display and fabricating method thereof |
| JP4497596B2 (en) * | 1999-09-30 | 2010-07-07 | 三洋電機株式会社 | Thin film transistor and display device |
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2003
- 2003-04-17 KR KR10-2003-0024503A patent/KR100496423B1/en active IP Right Grant
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| Publication number | Publication date |
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| KR20040090599A (en) | 2004-10-26 |
| CN101308866B (en) | 2011-06-22 |
| KR100496423B1 (en) | 2005-06-17 |
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