CN101308792A - Apparatus and method for improving silica layer growth on wafer - Google Patents
Apparatus and method for improving silica layer growth on wafer Download PDFInfo
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- CN101308792A CN101308792A CNA2007100406547A CN200710040654A CN101308792A CN 101308792 A CN101308792 A CN 101308792A CN A2007100406547 A CNA2007100406547 A CN A2007100406547A CN 200710040654 A CN200710040654 A CN 200710040654A CN 101308792 A CN101308792 A CN 101308792A
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Abstract
The invention relates to a device for improving the growth of the monox layers of wafers. The device comprises a furnace tube, a wafer cassette, a plurality of wafers and at least one control piece. The wafers and the control piece are arranged on the wafer cassette. The invention provides a method to improve the growth of the monox layers of the wafers. Compared with the prior art, silicon nitride films are arranged at the back sides of the wafers; a retaining plate is added between the control piece and the wafers and silicon nitride films are arranged on both the front side and the back side of the retaining plate, which can effectively prevent the silicon nitride film at the back side of the control piece from affecting the oxidation rate of the wafers during the reaction in the furnace tube, thus ensuring that the oxidation rates of all the wafers in the furnace tube are the same and improving electric thickness stability and qualification rate of the wafers in reliability test.
Description
Technical field
The present invention relates to a kind of production process of semiconductor, relate in particular to the growth of wafer silicon oxide layer.
Background technology
Because there is high affinity on the wafer top layer to oxygen molecule, so wafer surface is exposed to the open air under oxygen containing atmosphere, is easy to form one deck silicon oxide layer.The method that generally adopts is that wafer is placed boiler tube at present, is raised to oxygen containing gases such as proper temperature, aerating oxygen or steam again, and just can grow on wafer one deck and silicon materials tack are good, and the good silica of insulating properties.
At present the device of wafer growing silicon oxide layer is that wafer is packed on the brilliant boat of boiler tube, and respectively puts a slice control sheet in the upper, middle and lower of brilliant boat, charges into oxygen then.The control sheet is whether the thickness that is used to detect on the wafer meets the processing procedure standard.The front of control sheet is the autoxidation silicon layer, and the back side is silicon oxide film.
For the processing procedure of 0.18 micron of most of 0.35 micron and a part, the back side of product wafer is silicon nitride film, and the back side of control sheet is silicon oxide film.Because wafer and control sheet are that level is closely put on brilliant boat, and silicon oxide film is different for the attraction repelling effect of oxygen molecule with silicon nitride film, this just makes when wafer is directly put below the control sheet, its oxidation rate can be faster than being positioned at other wafers, corresponding silicon oxide layer thickness also can be than thick 1.5～4 dusts of other wafer, this phenomenon can cause the wafer oxidated layer thickness adjacent with the control sheet back side unusual, influence the result of wafer reliability testing, also can influence the yields of wafer for some processing procedure.
Summary of the invention
The object of the present invention is to provide a kind of device and method that improves silica layer growth on wafer, it can be so that the silicon oxide layer consistency of thickness of interior each wafer of reacting furnace.
For achieving the above object, a kind of device that improves silica layer growth on wafer of the present invention comprises a boiler tube, a brilliant boat, and several wafers and at least one control sheet, wafer and control sheet all are placed on the brilliant boat; Wherein, be placed with a catch between described control sheet and the wafer, the obverse and reverse of this catch is silicon nitride film.
The present invention also provides a kind of method of improving silica layer growth on wafer, comprises the brilliant boat of carrying several wafers and at least one control sheet is packed in the boiler tube; Wherein, this method also comprised the steps: before the boiler tube of packing into, placed a catch between adjacent chip and the control sheet.
Compared with prior art, between control sheet and wafer, inserted a catch among the present invention, the obverse and reverse of this catch is silicon nitride film, when the back side of product wafer is silicon nitride film, the silicon oxide film that can effectively prevent to control the sheet back side influences the speed of growth of front wafer surface silica in the boiler tube course of reaction, thereby the silicon oxide thickness unanimity of each wafer surface in the assurance boiler tube, the stability and the yields of raising wafer testing electrical property.
Description of drawings
To the description of one embodiment of the invention, can further understand purpose, specific structural features and the advantage of its invention by following in conjunction with its accompanying drawing.Wherein,
Fig. 1 improves the cutaway view of the device of silica layer growth on wafer for the present invention.
Embodiment
As shown in Figure 1, the device that the present invention improves silica layer growth on wafer comprises 1, one brilliant boat 2 of a boiler tube, several wafers 3, three controls sheet 4 (41,42,43) and two catch 5 (51,52).
See also Fig. 1, brilliant boat 2 is used to carry several wafers 3, and wafer 3 is horizontal in brilliant boat 2.The front of three control sheets 4 is autoxidation silicon layers, and the back side is silicon oxide film.The obverse and reverse of two catch 5 is silicon nitride.The first control sheet 41 is positioned at the top of brilliant boat 2, and the second control sheet 42 is positioned at the middle part of brilliant boat 2, and the 3rd control sheet 43 is positioned at the bottom of brilliant boat 2.First catch 51 is positioned at the below of the first control sheet 41, and second catch 52 is positioned at the below of the second control sheet 42.
At normal temperatures, the board of loaded with wafers 3 (not shown) is set to control sheet 4 by computer and is reserved three rooms, brilliant boat 2 upper, middle and lower, and below the first control sheet 41 and the second control sheet 42, reserve a room respectively and give first catch 51 and second catch 52, the wafer 3 that will need silicon oxide layer deposited then earlier is by the brilliant boat 2 of packing into of order from top to bottom, pack at last control sheet 4 and catch 5.
In other embodiment of the present invention, can regulate the concrete parameter of board as required, thereby adjust the wafer 3 of packing into, the order of control sheet 4 and catch 5.
The brilliant boat 2 that wafer 3, control sheet 4 and catch 5 will be housed then rises up into boiler tube 1 heating and aerating oxygen, grow oxide on the surface of wafer 3 and control sheet 4, reach technological requirement thickness after, close oxygen.Feed the nitrogen after annealing afterwards, boiler tube 1 cooling, and fall brilliant boat 2.
In embodiments of the present invention, the position of three control sheets 4 is evenly distributed on brilliant boat 2, mainly considers brilliant boat 2 in the process that rises up into boiler tube 1 oxidation, and the wafer 3 that is arranged above and below may cause the thickness of silicon oxide layer to be distinguished to some extent owing to distribution of gas is uneven.
In other embodiment of the present invention, a plurality of control sheets 4 can be set to be arranged on the brilliant boat 2, be provided with a catch 5 in the middle of corresponding each control sheet 4 and the wafer 3, because the back side of wafer 3 and this catch 5 all is the film of silicon nitride, this just can be so that all wafers 3 obtain identical oxidation rate, and the silicon oxide layer that prevents to control sheet 4 back sides has influence on the growth of the silicon oxide layer in adjacent chip 3 fronts.
The present invention is not only applicable to wafer and vertically places at brilliant boat, also is applicable to the brilliant boat of horizontal placement wafer.
Claims (6)
1, a kind of device that improves silica layer growth on wafer comprises a boiler tube, a brilliant boat, and several wafers and at least one control sheet, wafer and control sheet all are placed on the brilliant boat; It is characterized in that: be placed with a catch between described control sheet and the wafer, the obverse and reverse of this catch is silicon nitride.
2, the device that improves silica layer growth on wafer as claimed in claim 1 is characterized in that: described control sheet front is the autoxidation silicon layer, and the back side is silicon oxide film.
3, the device that improves silica layer growth on wafer as claimed in claim 2 is characterized in that: the back side and the catch of described control sheet are adjacent.
4, a kind of method of improving silica layer growth on wafer comprises the brilliant boat of carrying several wafers and at least one control sheet is packed in the boiler tube; It is characterized in that this method also comprised the steps: before the boiler tube of packing into, placed a catch between adjacent chip and the control sheet.
5, the method for improving silica layer growth on wafer as claimed in claim 4, it is characterized in that: the obverse and reverse of described catch is silicon nitride.
6, the method for improving silica layer growth on wafer as claimed in claim 4 is characterized in that: described control sheet front is the autoxidation silicon layer, and the back side is silicon oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100406547A CN100570831C (en) | 2007-05-15 | 2007-05-15 | A kind of device and method that improves silica layer growth on wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100406547A CN100570831C (en) | 2007-05-15 | 2007-05-15 | A kind of device and method that improves silica layer growth on wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101308792A true CN101308792A (en) | 2008-11-19 |
| CN100570831C CN100570831C (en) | 2009-12-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2007100406547A Active CN100570831C (en) | 2007-05-15 | 2007-05-15 | A kind of device and method that improves silica layer growth on wafer |
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| CN (1) | CN100570831C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856175A (en) * | 2012-09-19 | 2013-01-02 | 上海华力微电子有限公司 | Furnace tube retaining plate structure and manufacturing method thereof |
| CN103035495A (en) * | 2012-11-28 | 2013-04-10 | 上海华力微电子有限公司 | Separation blade used for polycrystalline silicon furnace tube technology and preparation method for same |
| CN103426747A (en) * | 2012-05-14 | 2013-12-04 | 无锡华润上华科技有限公司 | Method for controlling thickness of wafer oxidation layer generated in furnace tube |
| CN104934317A (en) * | 2014-03-20 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | Wafer growing device and method |
| CN111235549A (en) * | 2020-01-16 | 2020-06-05 | 长江存储科技有限责任公司 | Wafer film growth method, furnace tube wafer arrangement system and baffle |
| CN113363191A (en) * | 2021-05-31 | 2021-09-07 | 北海惠科半导体科技有限公司 | Wafer boat, diffusion apparatus and semiconductor device manufacturing method |
| CN115125621A (en) * | 2022-08-12 | 2022-09-30 | 合肥晶合集成电路股份有限公司 | Method for forming oxide film by using oxidation reaction furnace |
| CN115198373A (en) * | 2022-07-22 | 2022-10-18 | 安徽易芯半导体有限公司 | Device and method for growing silicon dioxide film by thermal oxidation method |
-
2007
- 2007-05-15 CN CNB2007100406547A patent/CN100570831C/en active Active
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103426747A (en) * | 2012-05-14 | 2013-12-04 | 无锡华润上华科技有限公司 | Method for controlling thickness of wafer oxidation layer generated in furnace tube |
| CN102856175A (en) * | 2012-09-19 | 2013-01-02 | 上海华力微电子有限公司 | Furnace tube retaining plate structure and manufacturing method thereof |
| CN102856175B (en) * | 2012-09-19 | 2015-08-19 | 上海华力微电子有限公司 | Boiler tube baffle structure manufacture method |
| CN103035495A (en) * | 2012-11-28 | 2013-04-10 | 上海华力微电子有限公司 | Separation blade used for polycrystalline silicon furnace tube technology and preparation method for same |
| CN104934317A (en) * | 2014-03-20 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | Wafer growing device and method |
| CN104934317B (en) * | 2014-03-20 | 2019-04-23 | 中芯国际集成电路制造(上海)有限公司 | A kind of chip grower and method |
| CN111235549A (en) * | 2020-01-16 | 2020-06-05 | 长江存储科技有限责任公司 | Wafer film growth method, furnace tube wafer arrangement system and baffle |
| CN113363191A (en) * | 2021-05-31 | 2021-09-07 | 北海惠科半导体科技有限公司 | Wafer boat, diffusion apparatus and semiconductor device manufacturing method |
| CN113363191B (en) * | 2021-05-31 | 2022-08-05 | 北海惠科半导体科技有限公司 | Wafer boat, diffusion apparatus and semiconductor device manufacturing method |
| CN115198373A (en) * | 2022-07-22 | 2022-10-18 | 安徽易芯半导体有限公司 | Device and method for growing silicon dioxide film by thermal oxidation method |
| CN115125621A (en) * | 2022-08-12 | 2022-09-30 | 合肥晶合集成电路股份有限公司 | Method for forming oxide film by using oxidation reaction furnace |
| CN115125621B (en) * | 2022-08-12 | 2023-11-10 | 合肥晶合集成电路股份有限公司 | Method for forming oxide film by using oxidation reaction furnace |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100570831C (en) | 2009-12-16 |
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Effective date of registration: 20111117 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |