CN115125621B - Method for forming oxide film by using oxidation reaction furnace - Google Patents
Method for forming oxide film by using oxidation reaction furnace Download PDFInfo
- Publication number
- CN115125621B CN115125621B CN202210968491.3A CN202210968491A CN115125621B CN 115125621 B CN115125621 B CN 115125621B CN 202210968491 A CN202210968491 A CN 202210968491A CN 115125621 B CN115125621 B CN 115125621B
- Authority
- CN
- China
- Prior art keywords
- oxide film
- oxidation
- hardware
- reaction
- product wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 127
- 238000000034 method Methods 0.000 title claims abstract description 82
- 230000003647 oxidation Effects 0.000 claims abstract description 78
- 230000008569 process Effects 0.000 claims abstract description 58
- 238000006243 chemical reaction Methods 0.000 claims abstract description 55
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 51
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 29
- 239000001301 oxygen Substances 0.000 claims description 29
- 229910052760 oxygen Inorganic materials 0.000 claims description 29
- 229910052757 nitrogen Inorganic materials 0.000 claims description 23
- 238000012423 maintenance Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 65
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000011295 pitch Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention provides a method for forming an oxide film by using an oxidation reaction furnace, which relates to the field of semiconductor manufacturing, and comprises the following steps: maintaining the oxidation reaction furnace to ensure that all hardware surfaces capable of undergoing oxidation reaction exposed in the oxidation process environment have a hardware oxide film; in the reaction cavity, an oxidation process is carried out on the surface of the product wafer so as to form a product oxide film on the surface of the product wafer, and a baffle control plate is replaced after the oxidation process is completed on the product wafer with each preset batch of times.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a method for forming an oxide film by using an oxidation reaction furnace.
Background
Currently, oxidation reactors are used in a variety of applications in wafer manufacturing, thermal growth of oxides, thermal annealing of wafer surfaces after ion implantation, and the like. Because the chamber of the reaction chamber of the domestic machine is small (for example, the chamber volume is about 5% smaller than that of the conventional reaction furnace) and the distance between the wafer boat pitches is small (for example, about 2mm smaller than that of the conventional wafer boat pitches), when oxide is thermally grown, the problem of uniformity difference of oxide film occurs when oxide film is formed on the product wafer in the bottom area of the wafer boat when the conventional process is adopted for production. The difference in oxide film thickness of the product wafer at different areas of the surface of each product wafer is very small, but such a too small difference in thickness is not required for production in actual production.
In order to solve the problems, the baffle control sheets on the wafer boat are frequently replaced, but the method increases the expenditure cost of the baffle control sheets, increases the time for manually changing the baffle control sheets, reduces the production time of a machine and influences the productivity.
Disclosure of Invention
The invention aims to provide a method for forming an oxide film by using an oxidation reaction furnace, which can solve the problem of uniformity difference in forming the oxide film.
In order to solve the above problems, the present invention provides a method for forming an oxide film using an oxidation reaction furnace, comprising the steps of:
maintaining the oxidation reaction furnace to ensure that all hardware surfaces which are exposed in the reaction cavity of the oxidation reaction furnace and can perform oxidation reaction are provided with a hardware oxide film; and
and in the reaction cavity, performing an oxidation process on the surface of the product wafer to form a product oxide film on the surface of the product wafer, and replacing a baffle plate after the product wafer with each preset batch of times completes the oxidation process, wherein when the oxidation process is performed on the surface of the product wafer, the flow of oxygen introduced into the reaction cavity is less than 1slm.
Optionally, maintaining the oxidation reactor to ensure that all hardware surfaces capable of undergoing oxidation reactions exposed in the reaction chamber of the oxidation reactor have a hardware oxide film comprises:
in the first maintenance, the reaction chamber is subjected to an oxidation process to form a hardware oxide film on all the original hardware surfaces which are exposed in the reaction chamber and can undergo oxidation reaction;
and when the N-th maintenance is carried out and new hardware capable of undergoing oxidation reaction exists in the reaction cavity, carrying out an oxidation process on the reaction cavity again to generate a hardware oxidation film on the surface of the new hardware, wherein N is more than 1 and is a positive integer.
Further, the materials of the original hardware and the new hardware comprise silicon and silicon carbide.
Further, the original hardware and the new hardware comprise an oxygen pipeline, a nitrogen pipeline and a wafer boat.
Further, the thickness of the hardware oxide film is 3000-5000 angstroms.
Optionally, when an oxidation process is performed on the surface of the product wafer, nitrogen is introduced into the reaction chamber from the bottom of the reaction chamber, and the flow rate of the nitrogen is 8 slm-15 slm.
Optionally, the preset batch number is greater than 8.
Further, the preset batch times are 20-42 times.
Optionally, the thickness of the product oxide film is less than 100nm.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a method for forming an oxide film by using an oxidation reaction furnace, which comprises the following steps: maintaining the oxidation reaction furnace to ensure that all hardware surfaces which are exposed in the reaction cavity of the oxidation reaction furnace and can perform oxidation reaction are provided with a hardware oxide film; and executing an oxidation process on the surface of the product wafer in the reaction cavity to form a product oxide film on the surface of the product wafer, and replacing a baffle plate after the product wafer is subjected to the oxidation process every preset batch times, wherein when the oxidation process is executed on the surface of the product wafer, the oxygen flow rate introduced into the reaction cavity is less than 1slm. The invention can avoid the influence of hardware on the oxidation process of the surface of the product wafer by carrying out the process oxide film operation in advance on all the hardware capable of carrying out the oxidation reaction in the reaction cavity before carrying out the oxidation process on the surface of the product wafer, and simultaneously solves the uniformity difference problem when forming the oxide film by the low oxygen flow when the hardware oxide film is matched with the surface of the product wafer to carry out the oxidation process, and reduces the operation time of the oxidation reaction furnace due to abnormal machine.
Drawings
FIG. 1 is a schematic flow chart of a method for forming an oxide film by using an oxidation reactor according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an oxidation reactor according to an embodiment of the present invention.
Reference numerals illustrate:
11-an outer tube; 12-an inner tube; 21-an oxygen line; 22-a first nitrogen line; 23-a base; 24-an exhaust line; 3-a wafer boat; 31-a first baffle control plate; 32-a second baffle; 33-product wafer.
Detailed Description
Currently, in the oxide film forming process, the oxygen flow is small (for example, the oxygen flow is 10 slm), and the thickness of the formed oxide film is small (for example, the thickness of the oxide film is about 50 nm), so that the uniformity difference problem easily occurs when the oxide film is formed on the product wafer in the bottom area of the wafer boat.
In order to solve the above problems, it is required to replace the barrier wafer once every 8 batches of product wafers after the oxidation process is completed, and this method consumes a large number of barrier wafers, increases the cost, and cannot fundamentally solve the above problems, compared to replacing the barrier wafer once every 42 batches of product wafers of the mass production machine after the oxidation process is completed.
Accordingly, in order to fundamentally solve the above problems, the present invention provides a method for forming an oxide film using an oxidation reaction furnace, comprising the steps of: maintaining the oxidation reaction furnace to ensure that all hardware surfaces which are exposed in the reaction cavity of the oxidation reaction furnace and can perform oxidation reaction are provided with a hardware oxide film; and executing an oxidation process on the surface of the product wafer in the reaction cavity to form a product oxide film on the surface of the product wafer, and replacing a baffle plate after the product wafer is subjected to the oxidation process every preset batch times, wherein when the oxidation process is executed on the surface of the product wafer, the oxygen flow rate introduced into the reaction cavity is less than 1slm. The invention can avoid the influence of hardware on the oxidation process of the surface of the product wafer by carrying out the process oxide film operation in advance on all the hardware capable of carrying out the oxidation reaction in the reaction cavity before carrying out the oxidation process on the surface of the product wafer, solves the uniformity difference problem when forming the oxide film by the low oxygen flow when the hardware oxide film is matched with the oxidation process of the surface of the product wafer, and reduces the operation time of the oxidation reaction furnace due to abnormal machine.
A method of forming an oxide film using an oxidation reactor according to the present invention will be described in further detail. The present invention will be described in more detail below with reference to the attached drawings, in which preferred embodiments of the present invention are shown, it being understood that one skilled in the art can modify the present invention described herein while still achieving the advantageous effects of the present invention. Accordingly, the following description is to be construed as broadly known to those skilled in the art and not as limiting the invention.
In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. It should be appreciated that in the development of any such actual embodiment, numerous implementation details must be made to achieve the developer's specific goals, such as compliance with system-related or business-related constraints, which will vary from one implementation to another. In addition, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art.
In order to make the objects and features of the present invention more comprehensible, embodiments accompanied with figures are described in detail below. It is noted that the drawings are in a very simplified form and utilize non-precise ratios, and are intended to facilitate a convenient, clear, description of the embodiments of the invention.
Fig. 1 is a schematic flow chart of a method for forming an oxide film using an oxidation reactor according to the present embodiment. As shown in fig. 1, the method for forming an oxide film using an oxidation reaction furnace provided in this embodiment includes the following steps:
maintaining the oxidation reaction furnace to ensure that all hardware surfaces which are exposed in the reaction cavity of the oxidation reaction furnace and can perform oxidation reaction are provided with a hardware oxide film; and
and in the reaction cavity, performing an oxidation process on the surface of a product wafer to form a product oxide film on the surface of the product wafer, and replacing a baffle plate after the oxidation process is completed on each preset batch of product wafers, wherein when the oxidation process is performed on the surface of the product wafer, the flow of oxygen introduced into the reaction cavity is less than 1slm.
The method for forming an oxide film using an oxidation reactor according to this embodiment will be described in detail with reference to fig. 1 to 2.
First, the oxidation reactor is maintained to ensure that all hardware surfaces capable of oxidation reaction exposed in the reaction chamber of the oxidation reactor have a hardware oxide film.
Fig. 2 is a schematic structural diagram of an oxidation reactor according to the present embodiment. As shown in fig. 2, in this step, the reaction chamber of the oxidation reaction furnace includes an outer tube 11 and an inner tube 12, the inner tube 12 is sleeved inside the outer tube 11, and a gap is provided between the side wall of the inner tube 12 and the side wall of the outer tube 11. The outer tube 11 has an opening at the bottom thereof, the openings of the inner tube 12 provided at both the top and bottom thereof, for example, a top opening and a bottom opening, the bottom opening of the inner tube 12 is connected in the vicinity of the bottom opening of the outer tube 11, and the bottom opening of the outer tube 11 is lower than the bottom opening of the inner tube 12, and the top opening of the inner tube 12 communicates the space between the inner tube 12 and the outer tube 11 with the inner space of the inner tube 12, i.e., the inner tube 12 communicates the outer tube 11 and the inner tube 12 through the top opening. Wherein, inner tube and outer tube can be the quartz capsule.
An oxygen pipeline 21 is attached to the outer wall of the inner tube 12, one end of the oxygen pipeline 21 is located at the outer side of the reaction cavity and is used for introducing oxygen, and the other end of the oxygen pipeline 21 is located at the top opening of the inner tube 12 and is used for introducing oxygen into the inner tube 12 from the top opening. A first nitrogen pipeline 22 is arranged in a gap between the outer pipe 11 and the inner pipe 12, one end of the first nitrogen pipeline 22 is positioned at the outer side of the reaction cavity and is used for introducing nitrogen into the first nitrogen pipeline 22, and the other end of the first nitrogen pipeline 22 is close to the bottom of the outer pipe 11 and is communicated with the gap between the outer pipe 11 and the inner pipe 12 so as to fill the gap between the outer pipe 11 and the inner pipe 12 with thin nitrogen. The bottom of the outer tube 11 is provided with a base 23 to place the outer tube 11 thereon, a second nitrogen line (not shown in the drawing) is provided in the outer tube 11, one end of the second nitrogen line is located outside the reaction chamber and is used for introducing nitrogen gas from the bottom of the outer tube to the inner tube 12, and the other end of the second nitrogen line is located on the bottom inner wall of the outer tube 11 below the bottom opening of the inner tube 12. An exhaust pipe 24 is provided near the bottom opening of the outer pipe 11, one end of the exhaust pipe 24 communicates with the internal environment of the inner pipe from the bottom of the outer pipe 11, and the other end is provided outside the reaction chamber to extract the gas in the reaction chamber. When the oxidation process is performed, a wafer boat 3 is disposed in the inner tube 12 of the reaction chamber, and the wafer boat 3 is stacked with a second baffle plate 32, a product wafer 33 and a first baffle plate 31 sequentially from bottom to top at intervals.
Due to the change of the machine table of the oxidation reaction furnace, the indoor volume of the reaction chamber of the oxidation reaction furnace is reduced by about 5%, and the pitch of the wafer boat is reduced by about 2mm, so that the uniformity difference problem easily occurs when an oxide film is formed on a product wafer in the oxidation process. In order to solve the above problems, firstly, an oxidation process is performed on the reaction chamber during the first maintenance, so that a hardware oxide film is formed on all the original hardware surfaces which are exposed in the reaction chamber and can undergo oxidation reaction, and a hardware oxide film is formed on all the hardware surfaces in the reaction chamber before the oxidation process is performed on the product wafer by using the maintenance operation, so that the occurrence of insufficient oxygen when the product wafer forms the oxide film due to the fact that the hardware plays a role of robbing oxidation when the oxidation process is performed on the surface of the product wafer can be avoided, and the uniformity difference problem occurring when the oxide film is formed can be solved. Wherein the original hardware includes, but is not limited to, an oxygen line, a nitrogen line (e.g., a first nitrogen line and a second nitrogen line), and a boat, and the material of the original hardware is typically a silicon material or a silicon carbide material.
And then carrying out an oxidation process again on the reaction cavity when the N-th maintenance is carried out and new hardware capable of carrying out oxidation reaction is replaced in the reaction cavity, so as to generate a hardware oxide film on the surface of the new hardware, wherein N is more than 1 and is a positive integer. That is, when new hardware capable of performing oxidation reaction is replaced in the reaction chamber, an oxidation process needs to be performed again on the reaction chamber to generate a hardware oxide film on the surface of the new hardware, so that any replaced or substituted new hardware capable of performing oxidation reaction performs a process oxide film operation, the occurrence of insufficient oxygen when the product wafer forms an oxide film due to the fact that the hardware plays a role of robbing oxidation when the oxidation process is performed on the surface of the product wafer can be avoided, and the problem of uniformity difference in forming the oxide film can be solved. And the working time of the oxidation reaction furnace caused by abnormal machine table is reduced.
Wherein the new hardware includes, but is not limited to, an oxygen line, a first nitrogen line, a second nitrogen line, and a boat. Wherein the material of the new hardware is typically a silicon material or a silicon carbide material. The thickness of the hardware oxide film is 3000-5000 angstroms. The oxide film thickness requirement can also be increased according to different structural characteristics in the chamber.
And then, in the reaction cavity, performing an oxidation process on the surface of the product wafer to form a product oxide film on the surface of the product wafer, and replacing a baffle plate after the product wafer is subjected to the oxidation process every preset batch times, wherein when the oxidation process is performed on the surface of the product wafer, the flow of oxygen introduced into the reaction cavity is smaller than 1slm. The thickness of the product oxide film is less than 100nm, for example 50nm.
In the oxidation process of this step, the flow rate of oxygen introduced into the inner tube 12 through the oxygen pipe 21 is smaller than a preset value, for example, the flow rate of oxygen is smaller than 1slm, so as to reduce the content of oxygen in the inner tube 12, so that the low oxygen flow rate when the hardware oxide film is matched with the surface of the product wafer to perform the oxidation process solves the uniformity difference problem when the oxide film is formed. The flow rate of nitrogen introduced through the first nitrogen line is, for example, greater than 10slm, specifically, for example, 25 slm; the flow rate of the nitrogen gas introduced into the inner tube 12 through the second nitrogen gas pipeline is, for example, 8slm to 15slm, specifically, for example, 8slm, 9 slm, 10slm, 11 slm, 12 slm, 13 slm, 14 slm or 15slm, so that the oxygen gas can be diluted by introducing the nitrogen gas into the inner tube 12 through the second nitrogen gas pipeline, the reaction time of the oxygen gas in the oxidation process can be prolonged, and an oxide film with better density is formed on the surface of the product wafer.
The number of preset batches is for example greater than 8 times, preferably, the number of preset times is for example 20-42 times, and the number of times of shifting the control sheet can be reduced, so that the expenditure cost of the control sheet is reduced, the manpower time is reduced, and the production time of a machine is increased.
In summary, the present invention provides a method for forming an oxide film by using an oxidation reaction furnace, comprising the following steps: maintaining the oxidation reaction furnace to ensure that all hardware surfaces which are exposed in the reaction cavity of the oxidation reaction furnace and can perform oxidation reaction are provided with a hardware oxide film; and executing an oxidation process on the surface of the product wafer in the reaction cavity to form a product oxide film on the surface of the product wafer, and replacing a baffle plate after the product wafer is subjected to the oxidation process every preset batch times, wherein when the oxidation process is executed on the surface of the product wafer, the oxygen flow rate introduced into the reaction cavity is less than 1slm. According to the invention, the process oxidation film operation is performed on each piece of hardware in the reaction cavity before the oxidation process is performed on the surface of the product wafer, so that the influence of the hardware on the oxidation process performed on the surface of the product wafer is avoided, meanwhile, the problem of uniformity difference in forming the oxidation film is solved through the low oxygen flow when the hardware oxidation film is matched with the surface of the product wafer to perform the oxidation process, and the abnormal operation time of the oxidation reaction furnace due to the machine is reduced.
Furthermore, unless specifically stated or indicated otherwise, the description of the terms "first," "second," and the like in the specification merely serve to distinguish between various components, elements, steps, etc. in the specification, and do not necessarily represent a logical or sequential relationship between various components, elements, steps, etc.
It will be appreciated that although the invention has been described above in terms of preferred embodiments, the above embodiments are not intended to limit the invention. Many possible variations and modifications of the disclosed technology can be made by anyone skilled in the art without departing from the scope of the technology, or the technology can be modified to be equivalent. Therefore, any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present invention still fall within the scope of the technical solution of the present invention.
Claims (8)
1. A method for forming an oxide film using an oxidation reactor, comprising the steps of:
maintaining the oxidation reaction furnace to ensure that all hardware surfaces which are exposed in the reaction cavity of the oxidation reaction furnace and can perform oxidation reaction are provided with a hardware oxide film;
during the first maintenance, an oxidation process is implemented on the reaction chamber, so that a hardware oxide film is formed on all the original hardware surfaces which can be subjected to oxidation reaction and are exposed in the reaction chamber;
when the N-th maintenance is carried out and new hardware capable of undergoing oxidation reaction is replaced in the reaction cavity, carrying out an oxidation process again on the reaction cavity to generate a hardware oxidation film on the surface of the new hardware, wherein N is more than 1 and is a positive integer; and
and in the reaction cavity, performing an oxidation process on the surface of the product wafer to form a product oxide film on the surface of the product wafer, and replacing a baffle plate after the product wafer with each preset batch of times completes the oxidation process, wherein when the oxidation process is performed on the surface of the product wafer, the flow of oxygen introduced into the reaction cavity is less than 1slm.
2. The method for forming an oxide film using an oxidation reactor according to claim 1, wherein the materials of the original hardware and the new hardware each include silicon and silicon carbide.
3. The method for forming an oxide film using an oxidation reactor according to claim 1, wherein the original hardware and the new hardware each include an oxygen line, a nitrogen line, and a boat.
4. The method for forming an oxide film using an oxidation reactor according to claim 1, wherein the thickness of the hardware oxide film is 3000 to 5000 angstroms.
5. The method for forming an oxide film using an oxidation reactor according to claim 1, wherein nitrogen is introduced into the reaction chamber from the bottom of the reaction chamber when an oxidation process is performed on the surface of the product wafer, and the flow rate of the nitrogen is 8slm to 15slm.
6. The method for forming an oxide film using an oxidation reactor according to claim 1, wherein the preset number of batches is greater than 8.
7. The method for forming an oxide film using an oxidation reactor according to claim 6, wherein the preset number of times is 20 to 42 times.
8. The method for forming an oxide film using an oxidation reactor according to claim 1, wherein the thickness of the product oxide film is less than 100nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210968491.3A CN115125621B (en) | 2022-08-12 | 2022-08-12 | Method for forming oxide film by using oxidation reaction furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210968491.3A CN115125621B (en) | 2022-08-12 | 2022-08-12 | Method for forming oxide film by using oxidation reaction furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115125621A CN115125621A (en) | 2022-09-30 |
| CN115125621B true CN115125621B (en) | 2023-11-10 |
Family
ID=83385753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210968491.3A Active CN115125621B (en) | 2022-08-12 | 2022-08-12 | Method for forming oxide film by using oxidation reaction furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115125621B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1672248A (en) * | 2002-06-14 | 2005-09-21 | 积水化学工业株式会社 | Oxide film forming method and oxide film forming apparatus |
| CN101308792A (en) * | 2007-05-15 | 2008-11-19 | 中芯国际集成电路制造(上海)有限公司 | Apparatus and method for improving silica layer growth on wafer |
| CN102044425A (en) * | 2009-10-23 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Deposition method of polysilicon gate |
| CN103165497A (en) * | 2013-02-20 | 2013-06-19 | 上海华力微电子有限公司 | Oxidation reacting furnace and method utilizing the same to conduct oxidizing reaction |
| CN104934299A (en) * | 2014-03-19 | 2015-09-23 | 东京毅力科创株式会社 | Method And Apparatus For Forming Silicon Oxide Film |
| JP2016225565A (en) * | 2015-06-03 | 2016-12-28 | 三菱電機株式会社 | Diffusion device and method for manufacturing semiconductor device |
| CN113388893A (en) * | 2021-06-11 | 2021-09-14 | 广州粤芯半导体技术有限公司 | Maintenance method of quartz reaction chamber |
-
2022
- 2022-08-12 CN CN202210968491.3A patent/CN115125621B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1672248A (en) * | 2002-06-14 | 2005-09-21 | 积水化学工业株式会社 | Oxide film forming method and oxide film forming apparatus |
| CN101308792A (en) * | 2007-05-15 | 2008-11-19 | 中芯国际集成电路制造(上海)有限公司 | Apparatus and method for improving silica layer growth on wafer |
| CN102044425A (en) * | 2009-10-23 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Deposition method of polysilicon gate |
| CN103165497A (en) * | 2013-02-20 | 2013-06-19 | 上海华力微电子有限公司 | Oxidation reacting furnace and method utilizing the same to conduct oxidizing reaction |
| CN104934299A (en) * | 2014-03-19 | 2015-09-23 | 东京毅力科创株式会社 | Method And Apparatus For Forming Silicon Oxide Film |
| JP2016225565A (en) * | 2015-06-03 | 2016-12-28 | 三菱電機株式会社 | Diffusion device and method for manufacturing semiconductor device |
| CN113388893A (en) * | 2021-06-11 | 2021-09-14 | 广州粤芯半导体技术有限公司 | Maintenance method of quartz reaction chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115125621A (en) | 2022-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10480073B2 (en) | Rotating semi-batch ALD device | |
| US10978361B2 (en) | Substrate processing apparatus and recording medium | |
| CN107871653A (en) | The manufacture method of substrate board treatment and semiconductor devices | |
| US10858736B2 (en) | Atomic layer deposition method | |
| JPH0556850B2 (en) | ||
| CN106558516A (en) | The manufacture method of lining processor and semiconductor device | |
| US11747789B2 (en) | Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium | |
| CN116682894B (en) | Method for improving batch-to-batch uniformity of ALD passivation films of TOPCON battery and application | |
| CN108165954A (en) | Film formation device and film build method | |
| CN115125621B (en) | Method for forming oxide film by using oxidation reaction furnace | |
| CN109314046A (en) | The manufacturing method and recording medium of substrate board treatment, semiconductor device | |
| CN116666501A (en) | Method for improving deposition uniformity of alumina passivation film and application thereof | |
| US8038793B2 (en) | Epitaxial growth method | |
| Thompson et al. | The scaling of CVD rotating disk reactors to large sizes and comparison with theory | |
| JPS62214619A (en) | Manufacture of multilayered thin film | |
| CN107871683A (en) | The manufacture method and lining processor of semiconductor devices | |
| US20040157183A1 (en) | Heating system, method for heating a deposition or oxidation reactor, and reactor including the heating system | |
| JP2008258207A (en) | Film deposition device | |
| CN104109844B (en) | A kind of processing technology of the tantalum nitride membrane based on technique for atomic layer deposition | |
| CN115104195A (en) | OLED metal mask coating method | |
| JPH04196321A (en) | Method and device for forming film | |
| US5175019A (en) | Method for depositing a thin film | |
| WO2023199656A1 (en) | Method for producing polysilicon wafer | |
| JPS6021528A (en) | Plasma gas-phase reactor | |
| CN117265499A (en) | Titanium nitride film forming method and furnace tube |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |