CN100547754C - A kind of device and method that improves detection precision of oxidated layer thickness - Google Patents
A kind of device and method that improves detection precision of oxidated layer thickness Download PDFInfo
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- CN100547754C CN100547754C CNB2006101161665A CN200610116166A CN100547754C CN 100547754 C CN100547754 C CN 100547754C CN B2006101161665 A CNB2006101161665 A CN B2006101161665A CN 200610116166 A CN200610116166 A CN 200610116166A CN 100547754 C CN100547754 C CN 100547754C
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- control sheet
- brilliant boat
- boiler tube
- wafer
- oxide layer
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Abstract
The device that the present invention improves detection precision of oxidated layer thickness comprises a boiler tube, a brilliant boat, several wafers and three control sheets that are placed on brilliant boat top, middle part and bottom, wafer and control sheet all are placed on the brilliant boat, and the control sheet top that is positioned at brilliant boat middle part and bottom is also placed a catch respectively.The present invention also provides a kind of method that improves detection precision of oxidated layer thickness in addition, comprises several wafers and three the control sheets brilliant boat of packing into, and place a catch respectively above the control sheet that is positioned at brilliant boat middle part and bottom, then brilliant boat is risen up into oxidation in the boiler tube.The catch that is arranged on control sheet top among the present invention can prevent effectively that the film of wafer lower surface from influencing the growth of control sheet oxide layer in oxidizing process, make three the control sheets on thickness of oxide layer more stable, can reflect the situation of whole boiler tube truely and accurately, thereby help accurate more technology controlling and process is carried out in the oxidation of whole boiler tube.
Description
Technical field
The present invention relates to a kind of manufacture of semiconductor, the oxidated layer thickness that relates in particular to wafer detects.
Background technology
Because there is high affinity on the wafer top layer to oxygen molecule, so wafer surface is exposed to the open air under oxygen containing atmosphere, is easy to form layer of oxide layer.The method that generally adopts is that wafer is placed boiler tube at present, is raised to oxygen containing gases such as proper temperature, aerating oxygen or steam again, and just can grow on wafer one deck and silicon materials tack are good, and the good silicon dioxide of insulating properties.
Usually need to detect gate oxide thickness and judge whether technology reaches standard.Detection method to gate oxide thickness is in the boiler tube zone at present: respectively put a slice control sheet in the upper, middle and lower of brilliant boat, and finish thickness of oxide layer on the back measurement control sheet in technology.
The shortcoming of the method is: when occupying wafer on the brilliant boat, what the control sheet upper surface of boiler tube middle part and bottom will be faced is the back side of wafer, for the product of some particular process sequence, the different film in the back side of wafer will cause different influences to the thickness of control sheet.For example, the wafer of 0.18 micron system, its chip back surface are one deck silicon nitride film (Si
3N
4), because silicon nitride film has repulsive interaction to oxygen, therefore when putting wafer above the control sheet, the speed of growth of silicon dioxide can be slack-off on the control sheet, controlling on the sheet thickness of oxide layer also can attenuation, thereby causes measuring inaccuracy.
Summary of the invention
The object of the present invention is to provide a kind of device and method that improves detection precision of oxidated layer thickness, it can effectively improve accuracy of detection.
For achieving the above object, the device that the present invention improves detection precision of oxidated layer thickness comprises a boiler tube, a brilliant boat, and several wafers and at least one control sheet, wafer and control sheet all are placed on the brilliant boat, and the top that described control sheet is adjacent also is provided with a catch.
The present invention also provides a kind of method that improves detection precision of oxidated layer thickness to comprise the brilliant boat of carrying several wafers and at least one control sheet is packed in the boiler tube; This method comprised the steps: also that before the boiler tube of packing into a catch is placed in each the control sheet adjacent with wafer top.
Compared with prior art, the catch that is arranged on control sheet top among the present invention can prevent effectively that the film of wafer lower surface from influencing the growth of control sheet oxide layer in oxidizing process, make three the control sheets on thickness of oxide layer more stable, can reflect the situation of whole boiler tube truely and accurately, thereby help accurate more technology controlling and process is carried out in the oxidation of whole boiler tube.
Description of drawings
To the description of one embodiment of the invention, can further understand purpose, specific structural features and the advantage of its invention by following in conjunction with its accompanying drawing.Wherein,
Fig. 1 improves the cutaway view of the device of detection precision of oxidated layer thickness for the present invention.
Embodiment
As shown in Figure 1, the device that the present invention relates to improve detection precision of oxidated layer thickness comprises 1, one brilliant boat 2 of a boiler tube, several wafers 3, three controls sheet 4 (41,42,43) and two catch 5 (51,52).
See also Fig. 1, brilliant boat 2 is used to carry several wafers 3, and wafer 3 is horizontal in brilliant boat 2.The upper and lower surface of three control sheets 4 and two catch 5 is silica (SiO
2), the first control sheet 41 is positioned at brilliant boat 2 tops, and the second control sheet 42 is positioned at the middle part of brilliant boat 2, and the 3rd control sheet 43 is positioned at the bottom of brilliant boat 2.
At normal temperatures, the board of loaded with wafers 3 (not shown) is set to control sheet 4 by computer and is reserved three rooms, brilliant boat 2 upper, middle and lower, and above the position of keeping for the second control sheet 42 and the 3rd control sheet 43, reserve a room respectively and give first catch 51 and second catch 52, the wafer 3 that will need deposited oxide layer then earlier is by the brilliant boat 2 of packing into of order from top to bottom, pack at last control sheet 4 and catch 5.
In other embodiment of the present invention, can regulate the concrete parameter of board as required, thereby adjust the wafer 3 of packing into, the order of control sheet 4 and catch 5.
The brilliant boat 2 that wafer 3, control sheet 4 and catch 5 will be housed then rises up into boiler tube 1 heating and aerating oxygen, grow oxide on the surface of wafer 3, control sheet 4 and catch 5, reach technological requirement thickness after, close oxygen.Feed the nitrogen after annealing afterwards, boiler tube 1 cooling, and fall brilliant boat 2.Take out three control sheets 4 at last, the oxide layer on three control sheets 4 is measured respectively, thereby judged whether to reach technological standards.
In embodiments of the present invention, the position of three control sheets 4 is evenly distributed on brilliant boat 2, consider that mainly brilliant boat 2 is in the process that rises up into boiler tube 1 oxidation, the wafer 3 that is arranged above and below may cause thickness of oxide layer to be distinguished to some extent owing to distribution of gas is uneven, so respectively arrange a control sheet 4 in the upper, middle and lower of brilliant boat 2, after oxidation is finished, measure the thickness of three control sheets 4 respectively.
In other embodiment of the present invention, a plurality of control sheets 4 can be set to be arranged on the brilliant boat 2, corresponding each control sheet 4 adjacent top are provided with a catch 5, after oxidation is finished, measure the oxidated layer thickness of a plurality of control sheets 4 respectively so that more accurately obtain the data of oxidated layer thickness.
Claims (4)
1, a kind of device that improves the oxide layer accuracy of detection, comprise a boiler tube, a brilliant boat, several wafers and at least one control sheet, wafer and control sheet all are placed on the brilliant boat, it is characterized in that: the top that described control sheet is adjacent also is provided with a catch, and described catch upper and lower surface is silica (SiO
2).
2, a kind of method that improves the oxide layer accuracy of detection comprises the brilliant boat of carrying several wafers and at least one control sheet is packed in the boiler tube; It is characterized in that this method comprised the steps: also that before the boiler tube of packing into a catch is placed in each the control sheet adjacent with wafer top, described catch upper and lower surface is silica (SiO
2).
3, the method for raising oxide layer accuracy of detection as claimed in claim 2 is characterized in that: described method comprises that also the boiler tube heating makes wafer and control sheet superficial growth oxide layer.
4, the method for raising oxide layer accuracy of detection as claimed in claim 3 is characterized in that: described method also comprises boiler tube heating finishing back taking-up control sheet, measures the oxidated layer thickness on each control sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101161665A CN100547754C (en) | 2006-09-18 | 2006-09-18 | A kind of device and method that improves detection precision of oxidated layer thickness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101161665A CN100547754C (en) | 2006-09-18 | 2006-09-18 | A kind of device and method that improves detection precision of oxidated layer thickness |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101150083A CN101150083A (en) | 2008-03-26 |
| CN100547754C true CN100547754C (en) | 2009-10-07 |
Family
ID=39250522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101161665A Expired - Fee Related CN100547754C (en) | 2006-09-18 | 2006-09-18 | A kind of device and method that improves detection precision of oxidated layer thickness |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100547754C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103646861A (en) * | 2013-11-28 | 2014-03-19 | 上海华力微电子有限公司 | A semiconductor manufacturing method for eliminating a furnace tube load effect |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751211B (en) * | 2011-04-17 | 2014-12-24 | 中国科学院微电子研究所 | Monitoring method of oxygen gas concentration in fast thermal annealing equipment |
| CN103426747A (en) * | 2012-05-14 | 2013-12-04 | 无锡华润上华科技有限公司 | Method for controlling thickness of wafer oxidation layer generated in furnace tube |
| CN103035495A (en) * | 2012-11-28 | 2013-04-10 | 上海华力微电子有限公司 | Separation blade used for polycrystalline silicon furnace tube technology and preparation method for same |
| CN104465347A (en) * | 2013-09-24 | 2015-03-25 | 北大方正集团有限公司 | Polycrystalline silicon surface processing method and system |
| CN105931975A (en) * | 2016-05-11 | 2016-09-07 | 上海华虹宏力半导体制造有限公司 | Apparatus and method for monitoring film thickness used in furnace tube thermal oxidation growth technology |
| CN107881486B (en) * | 2017-11-07 | 2019-08-16 | 长鑫存储技术有限公司 | A method of improving film deposit uniformity |
-
2006
- 2006-09-18 CN CNB2006101161665A patent/CN100547754C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103646861A (en) * | 2013-11-28 | 2014-03-19 | 上海华力微电子有限公司 | A semiconductor manufacturing method for eliminating a furnace tube load effect |
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|---|---|
| CN101150083A (en) | 2008-03-26 |
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| C14 | Grant of patent or utility model | ||
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
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| TR01 | Transfer of patent right |
Effective date of registration: 20111118 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091007 Termination date: 20180918 |