CN101303895A - shift register - Google Patents
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Abstract
Description
技术领域 technical field
本发明涉及一种移位缓存器,尤其是指一种利用预充电来延长像素的充电时间的移位缓存器。The invention relates to a shift register, in particular to a shift register which utilizes precharging to prolong the charging time of pixels.
背景技术 Background technique
功能先进的显示器渐成为现今消费电子产品的重要特色,其中液晶显示器已经逐渐成为各种电子设备如行动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记型计算机屏幕所广泛应用具有高分辨率彩色屏幕的显示器。Displays with advanced functions have gradually become an important feature of today's consumer electronics products. Liquid crystal displays have gradually become widely used in various electronic devices such as mobile phones, personal digital assistants (PDAs), digital cameras, computer screens or notebook computer screens. monitor with high resolution color screen.
请参阅图1,图1是现有技术的液晶显示器10的功能方块图。液晶显示器10包含一液晶显示面板12、一栅极驱动器(gate driver)14以及源极驱动器(source driver)16。液晶显示面板12包含多个像素(pixel),而每一个像素包含三个分别代表红绿蓝(RGB)三原色的像素单元20构成。以一个1024×768分辨率的液晶显示面板12来说,共需要1024×768×3个像素单元20组合而成。栅极驱动器14输出扫描信号使得每一列的晶体管22依序开启,同时源极驱动器16则输出对应的数据信号至一整列的像素单元20使其充电到各自所需的电压,以显示不同的灰阶。当同一列充电完毕后,栅极驱动器14便将该列的扫描信号关闭,然后栅极驱动器14再输出扫描信号将下一列的晶体管22打开,再由源极驱动器16对下一列的像素单元20进行充放电。如此依序下去,直到液晶显示面板12的所有像素单元20都充电完成,再从第一列开始充电。Please refer to FIG. 1 . FIG. 1 is a functional block diagram of a
在目前的液晶显示面板设计中,栅极驱动器14等效上为移位缓存器(shiftregister),其目的即每隔一固定间隔输出扫描信号至液晶显示面板12。以一个1024×768分辨率的液晶显示面板12以及60Hz的更新频率为例,每一个画面的显示时间约为1/60=16.67ms。所以每一个扫描信号的脉波约为16.67ms/768=21.7μs。而源极驱动器16则在这21.7μs的时间内,将像素单元20充放电到所需的电压,以显示出相对应的灰阶。In current liquid crystal display panel design, the
然而,对于使用于非晶硅薄膜工艺技术制造的高分辨率液晶显示面板的栅极驱动器14而言,常常会因为像素单元20的晶体管22导通时间太短,导致液晶电容充电时间不足,或是栅极驱动器14内部晶体管的偏压(stress)问题而造成液晶显示面板12的表现发生异常。如图2所示,图2是现有技术的移位缓存器的信号时序图。如图2所示,美国专利公告第7,310,402号揭露的移位缓存器的输出扫描信号OUT-N无法快速地到达高电压逻辑位准。由于对应像素的晶体管必须在高电压逻辑位准才能有效开启导通,所以现有技术的移位缓存器有效的充电时间非常短暂,有可能导致像素还未到达所要电压前就晶体管就不导通。如此一来,显示质量会受到影响。However, for the
美国专利公告第5,222,082号所述的移位缓存器包含多个移位缓存单元,而每一移位缓存单元是用来依据频率信号,将输入信号延迟输出而为输出信号。而下一级的移位缓存单元则将上一级的移位缓存单元的输出信号做为输入信号,再延迟输出成为自身的输出信号。然而,移位缓存单元的晶体管的栅极电压会在延迟输出之后仍长时间维持在高电压,直到下一次扫描循环之前才会回复至低电压准位,如此一来,会导致晶体管的临界电压发生偏移(shift)。此外,当晶体管处于正偏压时,正偏压的偏压时间越长对晶体管临界电压偏移程度影响也越大,这会影响晶体管的有效运作,连带影响晶体管的使用寿命。最后甚至会导致移位缓存器的使用寿命缩短。The shift register disclosed in US Pat. No. 5,222,082 includes a plurality of shift register units, and each shift register unit is used to delay an input signal to output an output signal according to a frequency signal. The next-stage shift register unit takes the output signal of the upper-stage shift register unit as an input signal, and then delays the output to become its own output signal. However, the gate voltage of the transistor of the shift register unit will remain at a high voltage for a long time after the delayed output, and will not return to a low voltage level until the next scan cycle, so that the threshold voltage of the transistor will be A shift occurs. In addition, when the transistor is in the positive bias, the longer the bias time of the forward bias, the greater the impact on the threshold voltage shift of the transistor, which will affect the effective operation of the transistor and affect the service life of the transistor. Finally, it may even lead to a shortened service life of the shift register.
为了改善上述晶体管的栅极电压因长时间处于高电压准位(亦即正偏压)的状态而影响晶体管的运作,一般来说,会试图让晶体管的栅极电压仅维持一段时间的高电压准位的状态后,就回复至低电压准位。美国专利公告第5,517,542号的移位缓存器利用第N+2级的移位缓存单元的输出信号OUTn+2去控制第N级的移位缓存单元的信号。美国专利公告第6,845,140号的移位缓存器利用第N+1级的移位缓存单元的输出信号去控制第N级的移位缓存单元的信号。这两种架构的移位缓存器的移位缓存单元是利用下一级(或下两级)的移位缓存单元的输出信号以使得晶体管的栅极电压由高电压准位转换为低电压准位,如此一来电晶体的栅极电压不会长时间维持在高电压准位,故能达到降低偏压效应的目的。但是这两种架构是利用下一级(或下两级)的移位缓存单元的输出信号传递控制信号到当前的移位缓存单元,因此信号的干扰也在所难免。In order to improve the operation of the transistor due to the gate voltage of the above-mentioned transistor being at a high voltage level (that is, forward bias voltage) for a long time, generally speaking, an attempt is made to keep the gate voltage of the transistor at a high voltage for a period of time After the state of the voltage level, it returns to the low voltage level. The shift register of US Patent No. 5,517,542 utilizes the output signal OUT n+2 of the shift register unit of stage N+2 to control the signal of the shift register unit of stage N. The shift register of US Patent Publication No. 6,845,140 utilizes the output signal of the N+1th stage shift register unit to control the signal of the Nth stage shift register unit. The shift register unit of the shift register of these two architectures utilizes the output signal of the shift register unit of the next stage (or the next two stages) so that the gate voltage of the transistor is converted from a high voltage level to a low voltage level. In this way, the gate voltage of the transistor will not remain at a high voltage level for a long time, so the purpose of reducing the bias effect can be achieved. However, these two architectures transmit the control signal to the current shift register unit by using the output signal of the shift register unit of the next stage (or the next two stages), so signal interference is unavoidable.
发明内容 Contents of the invention
因此,本发明之一目的在于提供一种预充电的移位缓存器,不仅可以延长像素的充电时间,同时也能拉长移位缓存器的表现寿命,以解决上述先前技术的问题。Therefore, an object of the present invention is to provide a pre-charged shift register, which can not only prolong the charging time of pixels, but also prolong the display life of the shift register, so as to solve the above-mentioned problems in the prior art.
依据本发明的上述目的,本发明提供一种移位缓存器,其包含多个以串联方式连接的移位缓存单元。每一移位缓存单元是用来依据一第一频率信号、一第二频率信号、一第三频率信号、一第四频率信号以及该每一移位缓存单元之前一个移位缓存单元的一驱动信号脉冲输出该每一移位缓存单元的输出信号,每一移位缓存单元包含一提升电路、一提升驱动电路、一下拉电路以及一下拉驱动电路。该提升电路耦接于该第一频率信号,用来提供该输出信号。该提升驱动电路用来在接收前一级的移位缓存单元的该驱动信号脉冲以及该第二频率信号时导通,并用来在接收该第三频率信号时不导通。该下拉电路用来提供一电源电压。该下拉驱动电路耦接于该下拉电路的一输入节点,用来于接收该第一频率信号导通该下拉电路,并用来于接收该第三频率信号或是该提升驱动电路输出信号时,不导通该下拉电路。According to the above object of the present invention, the present invention provides a shift register comprising a plurality of shift register units connected in series. Each shift register unit is used for driving according to a first frequency signal, a second frequency signal, a third frequency signal, a fourth frequency signal and a shift register unit before each shift register unit The signal pulse outputs the output signal of each shift register unit, and each shift register unit includes a boost circuit, a boost drive circuit, a pull-down circuit and a pull-down drive circuit. The boost circuit is coupled to the first frequency signal for providing the output signal. The boost driving circuit is used for conducting when receiving the driving signal pulse of the shift register unit of the previous stage and the second frequency signal, and is used for not conducting when receiving the third frequency signal. The pull-down circuit is used to provide a power supply voltage. The pull-down drive circuit is coupled to an input node of the pull-down circuit, and is used to turn on the pull-down circuit when receiving the first frequency signal, and is used to not turn on the pull-down circuit when receiving the third frequency signal or the output signal of the boost drive circuit. Turn on the pull-down circuit.
本发明之另一目的为提供一种移位缓存单元包含一提升电路、一提升驱动电路、一下拉电路以及一下拉驱动电路。该提升电路耦接于该第一频率信号,用来提供该输出信号。该提升驱动电路用来在接收前一级的移位缓存单元的该驱动信号脉冲以及该第二频率信号时导通,并用来在接收该第三频率信号时不导通。该下拉电路用来提供一电源电压。该下拉驱动电路耦接于该下拉电路的一输入节点,用来于接收该第一频率信号导通该下拉电路,并用来在接收该第三频率信号或是该提升驱动电路输出信号时,不导通该下拉电路。Another object of the present invention is to provide a shift register unit comprising a boost circuit, a boost drive circuit, a pull-down circuit, and a pull-down drive circuit. The boost circuit is coupled to the first frequency signal for providing the output signal. The boost driving circuit is used for conducting when receiving the driving signal pulse of the shift register unit of the previous stage and the second frequency signal, and is used for not conducting when receiving the third frequency signal. The pull-down circuit is used to provide a power supply voltage. The pull-down drive circuit is coupled to an input node of the pull-down circuit, and is used to turn on the pull-down circuit when receiving the first frequency signal, and is used to not turn on the pull-down circuit when receiving the third frequency signal or the output signal of the boost drive circuit. Turn on the pull-down circuit.
附图说明 Description of drawings
图1为先前技术液晶显示器的功能方块图;FIG. 1 is a functional block diagram of a prior art liquid crystal display;
图2为先前技术移位缓存器的信号时序图;FIG. 2 is a signal timing diagram of a prior art shift register;
图3为本发明移位缓存器的移位缓存单元的电路图;Fig. 3 is the circuit diagram of the shift buffer unit of the shift register of the present invention;
图4为图3中移位缓存单元的各信号以及节点的时序图。FIG. 4 is a timing diagram of signals and nodes of the shift register unit in FIG. 3 .
【主要组件符号说明】[Description of main component symbols]
10液晶显示器 12液晶显示面板10 liquid crystal display 12 liquid crystal display panel
14栅极驱动器 16源极驱动器14
20像素单元 22晶体管20 pixel unit 22 transistors
100[n]移位缓存单元 T1-T11晶体管100[n] shift buffer unit T1-T11 transistors
102提升电路 104提升驱动电路102
106下拉电路 108下拉驱动电路106 pull-
CKO第一频率信号 CKE第二频率信号CKO first frequency signal CKE second frequency signal
XCKO 第三频率信号XCKE第四频率信号XCKO third frequency signal XCKE fourth frequency signal
P、Q节点 OUT(n)输出端P, Q node OUT(n) output terminal
ST(n)、ST(n-1)驱动信号端ST(n), ST(n-1) drive signal terminal
具体实施方式 Detailed ways
请参阅图3,图3为本发明移位缓存器中移位缓存单元100的电路图。本实施例的移位缓存器可适用于液晶显示器。移位缓存器包含多个串接(cascade-connected)的移位缓存单元100[n]。移位缓存单元100[n]用来依据一第一频率信号CKO、一第二频率信号CKE、一第三频率信号XCKO、一第四频率信号XCKE以及每一移位缓存单元100[n]之前一个移位缓存单元100[n-1]的一驱动信号脉冲输出每一移位缓存单元100[n]的扫描信号。当第一级移位缓存单元100[1]自输入端ST(0)接收到一触发起始脉冲Vst之后,移位缓存单元100[1]就会隔一标准频率(clock cycle)输出产生输出信号脉冲ST(1),接下来,每一移位缓存单元100[n]是依据第一频率信号CKO、第二频率信号CKE、第三频率信号XCKO、第四频率信号XCKE以及每一移位缓存单元100[n]之前一个移位缓存单元100[n-1]在驱动信号端ST(n-1)输出的驱动信号脉冲,以每隔一标准频率的方式在该每一移位缓存单元100[n]的输出端OUT(n)输出一输出信号,该输出信号即扫瞄信号脉冲,用来开启对应的像素晶体管。第一频率信号CKO与第二频率信号CKE的相位相差180度,第三频率信号XCKO与第四频率信号XCKE的相位相差180度,第一频率信号CKO与第三频率信号XCKO的相位相差90度,第二频率信号CKE与第四频率信号XCKE的相位相差90度。Please refer to FIG. 3 . FIG. 3 is a circuit diagram of the
每一移位缓存单元100[n]包含一提升电路(pull-up circuit)102、一提升驱动电路(pull-up driving circuit)104、一下拉电路(pull-down circuit)106以及一下拉驱动电路(pull-down driving circuit)108。提升电路102耦接于第一频率信号CKO,用来在输出端OUT(N)提供输出信号。提升驱动电路104用来在接收前一级的移位缓存单元100[n-1]的驱动信号脉冲以及第二频率信号(CKE)时导通,用来在接收第三频率信号(XCKO)时不导通。下拉电路106用来提供一电源电压Vss。下拉驱动电路108用来在接收第一频率信号CKO时导通下拉电路106,并用来在接收第三频率信号XCKO或是提升驱动电路104输出信号时,不导通下拉电路106。Each shift register unit 100[n] includes a pull-up
提升电路102包含一第一晶体管T1以及一第二晶体管T2。第一晶体管T1的漏极耦接至第一频率信号CKO,第一晶体管T1的栅极耦接至提升电路102的输入节点Q,第一晶体管T1的源极耦接至一输出节点OUTN。第二晶体管T2的漏极耦接至第一频率信号CKO,第二晶体管T2的栅极耦接至提升电路102的输入节点Q,第二晶体管T2的源极耦接至一驱动信号端ST(N)。The
提升驱动电路104包含一第三晶体管T3、一电容C1、一第四晶体管T4、一第五晶体管T5以及一第六晶体管T6。第三晶体管T3的漏极与栅极耦接至前一级的移位缓存单元100[n-1]的驱动信号端ST(N-1),第三晶体管T3的源极耦接至提升电路102的输入节点Q。电容C1的一端耦接至提升电路102的输入节点Q,另一端耦接至第二频率信号CKE。第四晶体管T4的漏极耦接至提升电路102的输入节点Q,第四晶体管T4的栅极耦接至第三频率信号XCKO,第四晶体管T4的源极耦接至电源电压VSS。第五晶体管T5的漏极耦接至驱动信号端ST(N),第五晶体管T5的栅极连接至第三频率信号XCKO及源极连接至电源电压VSS。第六晶体管T6的漏极耦接至输出节点OUT(N),第六晶体管T6的栅极连接至第三频率信号(XCKO),第六晶体管T6的源极连接至电源电压VSS。The
下拉电路106包含一第七晶体管T7以及一第八晶体管T8。第七晶体管T7的漏极耦接至提升电路102的输入节点Q,第七晶体管T7的栅极耦接至下拉电路106的输入节点P,第七晶体管T7的源极耦接至电源电压VSS。第八晶体管T8的漏极耦接至驱动信号端ST(N),第八晶体管T8的栅极耦接至下拉电路106的输入节点P,第八晶体管T8的源极耦接至电源电压VSS。The pull-
下拉驱动电路108包含一第九晶体管T9、一第十晶体管T10以及一第十一晶体管T11。第九晶体管T9的漏极与栅极耦接至第一频率信号CKO,第九晶体管T9的源极耦接至下拉电路106的输入节点P。第十晶体管T10的漏极连接至下拉电路106的输入节点P,第十晶体管T10的栅极耦接至第三频率信号XCKO,第十晶体管T10的源极耦接至电源电压VSS。第十一晶体管T11的漏极耦接至下拉电路106的输入节点P,第十一晶体管T11的栅极耦接至提升电路102的输入节点Q,第十一晶体管T11的源极耦接至电源电压VSS。The pull-down
请同时参考图3以及图4,图4为图3中各信号以及节点的时序图。在时段t0-t1期间,第一频率信号CKO和第四频率信号XCKE处于高电压逻辑准位,第二频率信号CKE以及第三频率信号XCKO处于低电压逻辑准位。来自前一级移位缓存单元100[n-1]的驱动信号端ST(n-1)的驱动信号亦处于高电压逻辑准位,使得晶体管T3会开启(turn on)导通。此时节点Q的电位开始被拉高,导致晶体管T1、T2亦被开启导通第一频率信号CKO,使输出端OUT(n)的电位也开始朝高电压逻辑准位上升。此时因为第三频率信号XCKO处于低电压逻辑准位,所以晶体管T4、T5、T6是不导通,而第一频率信号CKO和第四频率信号XCKE处于高电压逻辑准位,所以晶体管T9、T10导通,使得下拉电路106的输入节点P的电位提升至高电压逻辑准位,因此下拉电路106的晶体管T7、T8皆导通。所以驱动信号端ST(n)的电位仍保持低电压逻辑准位。此时,电容C1会储存节点Q以及第二频率信号CKE之间的电位差。Please refer to FIG. 3 and FIG. 4 at the same time. FIG. 4 is a timing diagram of each signal and node in FIG. 3 . During the period t0-t1, the first clock signal CKO and the fourth clock signal XCKE are at a high voltage logic level, and the second clock signal CKE and the third clock signal XCKO are at a low voltage logic level. The driving signal from the driving signal terminal ST(n−1) of the previous stage shift register unit 100[n−1] is also at a high voltage logic level, so that the transistor T3 is turned on. At this time, the potential of the node Q starts to be pulled high, causing the transistors T1 and T2 to be turned on to conduct the first frequency signal CKO, so that the potential of the output terminal OUT(n) also starts to rise toward the high voltage logic level. At this time, because the third frequency signal XCKO is at a low-voltage logic level, the transistors T4, T5, and T6 are not conducting, while the first frequency signal CKO and the fourth frequency signal XCKE are at a high-voltage logic level, so the transistors T9, T10 is turned on, so that the potential of the input node P of the pull-
在时段t1-t2期间,第一频率信号CKO和第二频率信号CKE处于高电压逻辑准位,第三频率信号XCKO以及第四频率信号XCKE处于低电压逻辑准位。因为来自前一级移位缓存单元100[n-1]的驱动信号端ST(n-1)的驱动信号亦处于低电压逻辑准位,所以晶体管T3会不导通。但因为第二频率信号CKE处于高电压逻辑准位,所以节点Q的电位随着电容C1储存的电位差而浮动提升,因此节点Q的电位还是处于高电压逻辑准位使得晶体管T1、T2被开启导通第一频率信号CKO,使输出端OUT(n)继续保持高电压逻辑准位。同时,下拉电路106的晶体管T7、T8不导通,所以驱动信号端ST(n)的电位会因第一频率信号CKO之故处于高电压逻辑准位,并输出至下一级的移位缓存单元100[n+1]。During the period t1-t2, the first clock signal CKO and the second clock signal CKE are at a high voltage logic level, and the third clock signal XCKO and the fourth clock signal XCKE are at a low voltage logic level. Because the driving signal from the driving signal terminal ST(n−1) of the previous stage shift register unit 100[n−1] is also at a low voltage logic level, the transistor T3 is not turned on. But because the second frequency signal CKE is at a high-voltage logic level, the potential of the node Q floats and rises with the potential difference stored in the capacitor C1, so the potential of the node Q is still at a high-voltage logic level so that the transistors T1 and T2 are turned on The first frequency signal CKO is turned on, so that the output terminal OUT(n) continues to maintain a high voltage logic level. At the same time, the transistors T7 and T8 of the pull-
在时段t2-t3期间,第二频率信号CKE和第三频率信号XCKO处于高电压逻辑准位,第一频率信号CKO以及第四频率信号XCKE处于低电压逻辑准位。此时,提升电路102以及下拉电路106皆不导通,而晶体管T4、T5、T6是导通,所以输出端OUT(n)的电位会被下拉至低电压逻辑准位,而驱动信号端ST(n)的电位则维持为低电压逻辑准位。During the period t2-t3, the second clock signal CKE and the third clock signal XCKO are at a high voltage logic level, and the first clock signal CKO and the fourth clock signal XCKE are at a low voltage logic level. At this time, neither the
本实施例的移位缓存器可应用于液晶显示器的栅极驱动器。The shift register of this embodiment can be applied to a gate driver of a liquid crystal display.
相较于现有技术,本发明的移位缓存器在每一级移位缓存单元中,当起始信号进入本级移位缓存单元时,本级移位缓存单元开始产生输出扫描信号,此时对应像素的晶体管会预先稍微打开,使得上一级的数据信号开始输入,以达到预充电的效果。当本级移位缓存单元的数据信号时序到时,输出扫描信号已到达完全的最高电压,得以将像素内的晶体管完全打开,并快速输入正确的数据信号。另外利用频率信号本身由最高电压下降至最低电压的周期变化,来使得此输出扫描信号的下降时间大幅降低。此外本发明的移位缓存器采用较低的频率,利用起始信号一半频率的频率来驱动晶体管,利用较低的频率来驱动可以延长电路的操作寿命,因此,此移位缓存器电路不仅可以产生较好的输出波形,并且又可以有较长的电路操作寿命以通过可靠度测试。由于消耗功率与操作频率成正比,较低的操作频率产生的功耗也相对较低,因此也比较省电。另外每一级移位缓存单元的起始信号是由上一级移位缓存单元所产生,而不需要由下一级移位缓存单元的输出信号来驱动,所以在不需要再额外设计拟制级移位缓存单元,减少实际应用上的问题。Compared with the prior art, in the shift register of the present invention, in each stage of shift register unit, when the start signal enters the shift register unit of this stage, the shift register unit of this stage starts to generate the output scanning signal, thus At this time, the transistor corresponding to the pixel will be slightly turned on in advance, so that the data signal of the upper stage starts to be input, so as to achieve the effect of precharging. When the timing of the data signal of the shift register unit of this stage arrives, the output scan signal has reached the full maximum voltage, so that the transistor in the pixel can be fully turned on, and the correct data signal can be quickly input. In addition, the cycle change of the frequency signal itself from the highest voltage to the lowest voltage is used to greatly reduce the falling time of the output scanning signal. In addition, the shift register of the present invention adopts a lower frequency, utilizes the frequency of half the frequency of the initial signal to drive the transistor, and utilizes a lower frequency to drive the operating life of the circuit, therefore, the shift register circuit can not only A better output waveform is produced, and a longer circuit operating life can be obtained to pass the reliability test. Since the power consumption is directly proportional to the operating frequency, the power consumption generated by the lower operating frequency is relatively lower, so it also saves more power. In addition, the start signal of each level of shift buffer unit is generated by the upper level of shift buffer unit, and does not need to be driven by the output signal of the next level of shift buffer unit, so no additional design is required Level shift buffer unit, reducing practical application problems.
虽然本发明已以较佳实施例揭露如上,然其并非用以限定本发明,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Those skilled in the art can make various corresponding modifications according to the present invention without departing from the spirit and essence of the present invention. Changes and deformations, but these corresponding changes and deformations should fall within the scope of protection of the appended claims of the present invention.
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US7953201B2 (en) | 2008-12-12 | 2011-05-31 | Au Optronics Corp. | Shift register with pre-pull-down module to suppress a spike |
US20110234577A1 (en) * | 2010-03-24 | 2011-09-29 | Au Optronics Corporation | Shift register with low power consumption |
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US5222082A (en) * | 1991-02-28 | 1993-06-22 | Thomson Consumer Electronics, S.A. | Shift register useful as a select line scanner for liquid crystal display |
US5517542A (en) * | 1995-03-06 | 1996-05-14 | Thomson Consumer Electronics, S.A. | Shift register with a transistor operating in a low duty cycle |
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