CN101303895A - shift register - Google Patents

shift register Download PDF

Info

Publication number
CN101303895A
CN101303895A CNA2008101266577A CN200810126657A CN101303895A CN 101303895 A CN101303895 A CN 101303895A CN A2008101266577 A CNA2008101266577 A CN A2008101266577A CN 200810126657 A CN200810126657 A CN 200810126657A CN 101303895 A CN101303895 A CN 101303895A
Authority
CN
China
Prior art keywords
coupled
transistor
frequency signal
circuit
pull
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2008101266577A
Other languages
Chinese (zh)
Other versions
CN101303895B (en
Inventor
蔡宗廷
陈勇志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AUO Corp
Original Assignee
AU Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AU Optronics Corp filed Critical AU Optronics Corp
Priority to CN2008101266577A priority Critical patent/CN101303895B/en
Publication of CN101303895A publication Critical patent/CN101303895A/en
Application granted granted Critical
Publication of CN101303895B publication Critical patent/CN101303895B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)

Abstract

The invention discloses a shift buffer consisting of a plurality of shift buffer units connected in series. Every shift buffer unit consists of a boosting circuit, a boosting drive circuit, a pull-down circuit and a pull-down drive circuit; wherein, the boosting circuit is coupled with a first frequency signal used for providing output signals; the boosting drive circuit is used for conduction when receiving the drive signal pulse of the previous level shift buffer unit and a second frequency signal as well as for non conduction when receiving a third frequency signal; the pull-down drive circuit is coupled with an input node of the pull-down circuit and used for the conduction of the pull-down circuit when receiving the first frequency signal as well as for non conduction of the pull-down circuit when receiving the third frequency signal or the output signal of the boosting drive circuit.

Description

移位缓存器 shift register

技术领域 technical field

本发明涉及一种移位缓存器,尤其是指一种利用预充电来延长像素的充电时间的移位缓存器。The invention relates to a shift register, in particular to a shift register which utilizes precharging to prolong the charging time of pixels.

背景技术 Background technique

功能先进的显示器渐成为现今消费电子产品的重要特色,其中液晶显示器已经逐渐成为各种电子设备如行动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记型计算机屏幕所广泛应用具有高分辨率彩色屏幕的显示器。Displays with advanced functions have gradually become an important feature of today's consumer electronics products. Liquid crystal displays have gradually become widely used in various electronic devices such as mobile phones, personal digital assistants (PDAs), digital cameras, computer screens or notebook computer screens. monitor with high resolution color screen.

请参阅图1,图1是现有技术的液晶显示器10的功能方块图。液晶显示器10包含一液晶显示面板12、一栅极驱动器(gate driver)14以及源极驱动器(source driver)16。液晶显示面板12包含多个像素(pixel),而每一个像素包含三个分别代表红绿蓝(RGB)三原色的像素单元20构成。以一个1024×768分辨率的液晶显示面板12来说,共需要1024×768×3个像素单元20组合而成。栅极驱动器14输出扫描信号使得每一列的晶体管22依序开启,同时源极驱动器16则输出对应的数据信号至一整列的像素单元20使其充电到各自所需的电压,以显示不同的灰阶。当同一列充电完毕后,栅极驱动器14便将该列的扫描信号关闭,然后栅极驱动器14再输出扫描信号将下一列的晶体管22打开,再由源极驱动器16对下一列的像素单元20进行充放电。如此依序下去,直到液晶显示面板12的所有像素单元20都充电完成,再从第一列开始充电。Please refer to FIG. 1 . FIG. 1 is a functional block diagram of a liquid crystal display 10 in the prior art. The liquid crystal display 10 includes a liquid crystal display panel 12 , a gate driver 14 and a source driver 16 . The liquid crystal display panel 12 includes a plurality of pixels, and each pixel includes three pixel units 20 respectively representing three primary colors of red, green, and blue (RGB). Taking a liquid crystal display panel 12 with a resolution of 1024×768 as an example, a total of 1024×768×3 pixel units 20 are required to be combined. The gate driver 14 outputs scanning signals to turn on the transistors 22 in each column sequentially, and at the same time, the source driver 16 outputs corresponding data signals to a whole column of pixel units 20 to charge them to their respective required voltages to display different grays. order. After the charging of the same row is completed, the gate driver 14 will turn off the scan signal of the row, and then the gate driver 14 will output the scan signal to turn on the transistor 22 of the next row, and then the pixel unit 20 of the next row will be turned on by the source driver 16. Perform charge and discharge. Continue in this order until all the pixel units 20 of the liquid crystal display panel 12 are fully charged, and then start charging from the first row.

在目前的液晶显示面板设计中,栅极驱动器14等效上为移位缓存器(shiftregister),其目的即每隔一固定间隔输出扫描信号至液晶显示面板12。以一个1024×768分辨率的液晶显示面板12以及60Hz的更新频率为例,每一个画面的显示时间约为1/60=16.67ms。所以每一个扫描信号的脉波约为16.67ms/768=21.7μs。而源极驱动器16则在这21.7μs的时间内,将像素单元20充放电到所需的电压,以显示出相对应的灰阶。In current liquid crystal display panel design, the gate driver 14 is equivalent to a shift register (shift register), and its purpose is to output scan signals to the liquid crystal display panel 12 at regular intervals. Taking a liquid crystal display panel 12 with a resolution of 1024×768 and an update frequency of 60 Hz as an example, the display time of each picture is about 1/60=16.67 ms. So the pulse wave of each scanning signal is about 16.67ms/768=21.7μs. The source driver 16 charges and discharges the pixel unit 20 to the required voltage during the 21.7 μs to display the corresponding gray scale.

然而,对于使用于非晶硅薄膜工艺技术制造的高分辨率液晶显示面板的栅极驱动器14而言,常常会因为像素单元20的晶体管22导通时间太短,导致液晶电容充电时间不足,或是栅极驱动器14内部晶体管的偏压(stress)问题而造成液晶显示面板12的表现发生异常。如图2所示,图2是现有技术的移位缓存器的信号时序图。如图2所示,美国专利公告第7,310,402号揭露的移位缓存器的输出扫描信号OUT-N无法快速地到达高电压逻辑位准。由于对应像素的晶体管必须在高电压逻辑位准才能有效开启导通,所以现有技术的移位缓存器有效的充电时间非常短暂,有可能导致像素还未到达所要电压前就晶体管就不导通。如此一来,显示质量会受到影响。However, for the gate driver 14 used in the high-resolution liquid crystal display panel manufactured by the amorphous silicon thin film process technology, it is often because the transistor 22 of the pixel unit 20 is turned on for a short time, resulting in insufficient charging time of the liquid crystal capacitor, or The abnormal behavior of the liquid crystal display panel 12 is caused by the stress of the internal transistors of the gate driver 14 . As shown in FIG. 2 , FIG. 2 is a signal timing diagram of a shift register in the prior art. As shown in FIG. 2 , the output scan signal OUT-N of the shift register disclosed in US Patent Publication No. 7,310,402 cannot reach the high voltage logic level quickly. Since the transistor corresponding to the pixel must be at a high voltage logic level to effectively turn on and conduct, the effective charging time of the shift register in the prior art is very short, which may cause the transistor to be turned off before the pixel reaches the desired voltage. . As a result, display quality will suffer.

美国专利公告第5,222,082号所述的移位缓存器包含多个移位缓存单元,而每一移位缓存单元是用来依据频率信号,将输入信号延迟输出而为输出信号。而下一级的移位缓存单元则将上一级的移位缓存单元的输出信号做为输入信号,再延迟输出成为自身的输出信号。然而,移位缓存单元的晶体管的栅极电压会在延迟输出之后仍长时间维持在高电压,直到下一次扫描循环之前才会回复至低电压准位,如此一来,会导致晶体管的临界电压发生偏移(shift)。此外,当晶体管处于正偏压时,正偏压的偏压时间越长对晶体管临界电压偏移程度影响也越大,这会影响晶体管的有效运作,连带影响晶体管的使用寿命。最后甚至会导致移位缓存器的使用寿命缩短。The shift register disclosed in US Pat. No. 5,222,082 includes a plurality of shift register units, and each shift register unit is used to delay an input signal to output an output signal according to a frequency signal. The next-stage shift register unit takes the output signal of the upper-stage shift register unit as an input signal, and then delays the output to become its own output signal. However, the gate voltage of the transistor of the shift register unit will remain at a high voltage for a long time after the delayed output, and will not return to a low voltage level until the next scan cycle, so that the threshold voltage of the transistor will be A shift occurs. In addition, when the transistor is in the positive bias, the longer the bias time of the forward bias, the greater the impact on the threshold voltage shift of the transistor, which will affect the effective operation of the transistor and affect the service life of the transistor. Finally, it may even lead to a shortened service life of the shift register.

为了改善上述晶体管的栅极电压因长时间处于高电压准位(亦即正偏压)的状态而影响晶体管的运作,一般来说,会试图让晶体管的栅极电压仅维持一段时间的高电压准位的状态后,就回复至低电压准位。美国专利公告第5,517,542号的移位缓存器利用第N+2级的移位缓存单元的输出信号OUTn+2去控制第N级的移位缓存单元的信号。美国专利公告第6,845,140号的移位缓存器利用第N+1级的移位缓存单元的输出信号去控制第N级的移位缓存单元的信号。这两种架构的移位缓存器的移位缓存单元是利用下一级(或下两级)的移位缓存单元的输出信号以使得晶体管的栅极电压由高电压准位转换为低电压准位,如此一来电晶体的栅极电压不会长时间维持在高电压准位,故能达到降低偏压效应的目的。但是这两种架构是利用下一级(或下两级)的移位缓存单元的输出信号传递控制信号到当前的移位缓存单元,因此信号的干扰也在所难免。In order to improve the operation of the transistor due to the gate voltage of the above-mentioned transistor being at a high voltage level (that is, forward bias voltage) for a long time, generally speaking, an attempt is made to keep the gate voltage of the transistor at a high voltage for a period of time After the state of the voltage level, it returns to the low voltage level. The shift register of US Patent No. 5,517,542 utilizes the output signal OUT n+2 of the shift register unit of stage N+2 to control the signal of the shift register unit of stage N. The shift register of US Patent Publication No. 6,845,140 utilizes the output signal of the N+1th stage shift register unit to control the signal of the Nth stage shift register unit. The shift register unit of the shift register of these two architectures utilizes the output signal of the shift register unit of the next stage (or the next two stages) so that the gate voltage of the transistor is converted from a high voltage level to a low voltage level. In this way, the gate voltage of the transistor will not remain at a high voltage level for a long time, so the purpose of reducing the bias effect can be achieved. However, these two architectures transmit the control signal to the current shift register unit by using the output signal of the shift register unit of the next stage (or the next two stages), so signal interference is unavoidable.

发明内容 Contents of the invention

因此,本发明之一目的在于提供一种预充电的移位缓存器,不仅可以延长像素的充电时间,同时也能拉长移位缓存器的表现寿命,以解决上述先前技术的问题。Therefore, an object of the present invention is to provide a pre-charged shift register, which can not only prolong the charging time of pixels, but also prolong the display life of the shift register, so as to solve the above-mentioned problems in the prior art.

依据本发明的上述目的,本发明提供一种移位缓存器,其包含多个以串联方式连接的移位缓存单元。每一移位缓存单元是用来依据一第一频率信号、一第二频率信号、一第三频率信号、一第四频率信号以及该每一移位缓存单元之前一个移位缓存单元的一驱动信号脉冲输出该每一移位缓存单元的输出信号,每一移位缓存单元包含一提升电路、一提升驱动电路、一下拉电路以及一下拉驱动电路。该提升电路耦接于该第一频率信号,用来提供该输出信号。该提升驱动电路用来在接收前一级的移位缓存单元的该驱动信号脉冲以及该第二频率信号时导通,并用来在接收该第三频率信号时不导通。该下拉电路用来提供一电源电压。该下拉驱动电路耦接于该下拉电路的一输入节点,用来于接收该第一频率信号导通该下拉电路,并用来于接收该第三频率信号或是该提升驱动电路输出信号时,不导通该下拉电路。According to the above object of the present invention, the present invention provides a shift register comprising a plurality of shift register units connected in series. Each shift register unit is used for driving according to a first frequency signal, a second frequency signal, a third frequency signal, a fourth frequency signal and a shift register unit before each shift register unit The signal pulse outputs the output signal of each shift register unit, and each shift register unit includes a boost circuit, a boost drive circuit, a pull-down circuit and a pull-down drive circuit. The boost circuit is coupled to the first frequency signal for providing the output signal. The boost driving circuit is used for conducting when receiving the driving signal pulse of the shift register unit of the previous stage and the second frequency signal, and is used for not conducting when receiving the third frequency signal. The pull-down circuit is used to provide a power supply voltage. The pull-down drive circuit is coupled to an input node of the pull-down circuit, and is used to turn on the pull-down circuit when receiving the first frequency signal, and is used to not turn on the pull-down circuit when receiving the third frequency signal or the output signal of the boost drive circuit. Turn on the pull-down circuit.

本发明之另一目的为提供一种移位缓存单元包含一提升电路、一提升驱动电路、一下拉电路以及一下拉驱动电路。该提升电路耦接于该第一频率信号,用来提供该输出信号。该提升驱动电路用来在接收前一级的移位缓存单元的该驱动信号脉冲以及该第二频率信号时导通,并用来在接收该第三频率信号时不导通。该下拉电路用来提供一电源电压。该下拉驱动电路耦接于该下拉电路的一输入节点,用来于接收该第一频率信号导通该下拉电路,并用来在接收该第三频率信号或是该提升驱动电路输出信号时,不导通该下拉电路。Another object of the present invention is to provide a shift register unit comprising a boost circuit, a boost drive circuit, a pull-down circuit, and a pull-down drive circuit. The boost circuit is coupled to the first frequency signal for providing the output signal. The boost driving circuit is used for conducting when receiving the driving signal pulse of the shift register unit of the previous stage and the second frequency signal, and is used for not conducting when receiving the third frequency signal. The pull-down circuit is used to provide a power supply voltage. The pull-down drive circuit is coupled to an input node of the pull-down circuit, and is used to turn on the pull-down circuit when receiving the first frequency signal, and is used to not turn on the pull-down circuit when receiving the third frequency signal or the output signal of the boost drive circuit. Turn on the pull-down circuit.

附图说明 Description of drawings

图1为先前技术液晶显示器的功能方块图;FIG. 1 is a functional block diagram of a prior art liquid crystal display;

图2为先前技术移位缓存器的信号时序图;FIG. 2 is a signal timing diagram of a prior art shift register;

图3为本发明移位缓存器的移位缓存单元的电路图;Fig. 3 is the circuit diagram of the shift buffer unit of the shift register of the present invention;

图4为图3中移位缓存单元的各信号以及节点的时序图。FIG. 4 is a timing diagram of signals and nodes of the shift register unit in FIG. 3 .

【主要组件符号说明】[Description of main component symbols]

10液晶显示器          12液晶显示面板10 liquid crystal display 12 liquid crystal display panel

14栅极驱动器          16源极驱动器14 gate drivers 16 source drivers

20像素单元            22晶体管20 pixel unit 22 transistors

100[n]移位缓存单元    T1-T11晶体管100[n] shift buffer unit T1-T11 transistors

102提升电路           104提升驱动电路102 boost circuit 104 boost drive circuit

106下拉电路           108下拉驱动电路106 pull-down circuit 108 pull-down drive circuit

CKO第一频率信号       CKE第二频率信号CKO first frequency signal CKE second frequency signal

XCKO                  第三频率信号XCKE第四频率信号XCKO third frequency signal XCKE fourth frequency signal

P、Q节点              OUT(n)输出端P, Q node OUT(n) output terminal

ST(n)、ST(n-1)驱动信号端ST(n), ST(n-1) drive signal terminal

具体实施方式 Detailed ways

请参阅图3,图3为本发明移位缓存器中移位缓存单元100的电路图。本实施例的移位缓存器可适用于液晶显示器。移位缓存器包含多个串接(cascade-connected)的移位缓存单元100[n]。移位缓存单元100[n]用来依据一第一频率信号CKO、一第二频率信号CKE、一第三频率信号XCKO、一第四频率信号XCKE以及每一移位缓存单元100[n]之前一个移位缓存单元100[n-1]的一驱动信号脉冲输出每一移位缓存单元100[n]的扫描信号。当第一级移位缓存单元100[1]自输入端ST(0)接收到一触发起始脉冲Vst之后,移位缓存单元100[1]就会隔一标准频率(clock cycle)输出产生输出信号脉冲ST(1),接下来,每一移位缓存单元100[n]是依据第一频率信号CKO、第二频率信号CKE、第三频率信号XCKO、第四频率信号XCKE以及每一移位缓存单元100[n]之前一个移位缓存单元100[n-1]在驱动信号端ST(n-1)输出的驱动信号脉冲,以每隔一标准频率的方式在该每一移位缓存单元100[n]的输出端OUT(n)输出一输出信号,该输出信号即扫瞄信号脉冲,用来开启对应的像素晶体管。第一频率信号CKO与第二频率信号CKE的相位相差180度,第三频率信号XCKO与第四频率信号XCKE的相位相差180度,第一频率信号CKO与第三频率信号XCKO的相位相差90度,第二频率信号CKE与第四频率信号XCKE的相位相差90度。Please refer to FIG. 3 . FIG. 3 is a circuit diagram of the shift register unit 100 in the shift register of the present invention. The shift register of this embodiment is applicable to liquid crystal displays. The shift register includes a plurality of cascade-connected shift register units 100[n]. The shift register unit 100[n] is used for a first clock signal CKO, a second clock signal CKE, a third clock signal XCKO, a fourth clock signal XCKE and each shift register unit 100[n] A driving signal pulse of one shift register unit 100[n−1] outputs a scan signal of each shift register unit 100[n]. After the first-stage shift register unit 100[1] receives a trigger start pulse Vst from the input terminal ST(0), the shift register unit 100[1] will output an output every one standard frequency (clock cycle). Signal pulse ST(1), next, each shift buffer unit 100[n] is based on the first frequency signal CKO, the second frequency signal CKE, the third frequency signal XCKO, the fourth frequency signal XCKE and each shift The drive signal pulse output by a shift register unit 100[n-1] before the buffer unit 100[n] at the drive signal terminal ST(n-1) is transmitted at every other standard frequency in each shift register unit The output terminal OUT(n) of 100[n] outputs an output signal, which is the scan signal pulse, and is used to turn on the corresponding pixel transistor. The phase difference between the first frequency signal CKO and the second frequency signal CKE is 180 degrees, the phase difference between the third frequency signal XCKO and the fourth frequency signal XCKE is 180 degrees, and the phase difference between the first frequency signal CKO and the third frequency signal XCKO is 90 degrees , the phase difference between the second frequency signal CKE and the fourth frequency signal XCKE is 90 degrees.

每一移位缓存单元100[n]包含一提升电路(pull-up circuit)102、一提升驱动电路(pull-up driving circuit)104、一下拉电路(pull-down circuit)106以及一下拉驱动电路(pull-down driving circuit)108。提升电路102耦接于第一频率信号CKO,用来在输出端OUT(N)提供输出信号。提升驱动电路104用来在接收前一级的移位缓存单元100[n-1]的驱动信号脉冲以及第二频率信号(CKE)时导通,用来在接收第三频率信号(XCKO)时不导通。下拉电路106用来提供一电源电压Vss。下拉驱动电路108用来在接收第一频率信号CKO时导通下拉电路106,并用来在接收第三频率信号XCKO或是提升驱动电路104输出信号时,不导通下拉电路106。Each shift register unit 100[n] includes a pull-up circuit 102, a pull-up driving circuit 104, a pull-down circuit 106, and a pull-up driving circuit (pull-down driving circuit) 108. The boost circuit 102 is coupled to the first clock signal CKO for providing an output signal at the output terminal OUT(N). The boost drive circuit 104 is used to turn on when receiving the driving signal pulse of the shift buffer unit 100[n-1] of the previous stage and the second frequency signal (CKE), and is used to receive the third frequency signal (XCKO) Not conducting. The pull-down circuit 106 is used to provide a power voltage Vss. The pull-down driving circuit 108 is used to turn on the pull-down circuit 106 when receiving the first frequency signal CKO, and is used to turn off the pull-down circuit 106 when receiving the third frequency signal XCKO or the output signal of the boost driving circuit 104 .

提升电路102包含一第一晶体管T1以及一第二晶体管T2。第一晶体管T1的漏极耦接至第一频率信号CKO,第一晶体管T1的栅极耦接至提升电路102的输入节点Q,第一晶体管T1的源极耦接至一输出节点OUTN。第二晶体管T2的漏极耦接至第一频率信号CKO,第二晶体管T2的栅极耦接至提升电路102的输入节点Q,第二晶体管T2的源极耦接至一驱动信号端ST(N)。The boost circuit 102 includes a first transistor T1 and a second transistor T2. The drain of the first transistor T1 is coupled to the first frequency signal CKO, the gate of the first transistor T1 is coupled to the input node Q of the boost circuit 102 , and the source of the first transistor T1 is coupled to an output node OUTN. The drain of the second transistor T2 is coupled to the first frequency signal CKO, the gate of the second transistor T2 is coupled to the input node Q of the boost circuit 102, and the source of the second transistor T2 is coupled to a driving signal terminal ST ( N).

提升驱动电路104包含一第三晶体管T3、一电容C1、一第四晶体管T4、一第五晶体管T5以及一第六晶体管T6。第三晶体管T3的漏极与栅极耦接至前一级的移位缓存单元100[n-1]的驱动信号端ST(N-1),第三晶体管T3的源极耦接至提升电路102的输入节点Q。电容C1的一端耦接至提升电路102的输入节点Q,另一端耦接至第二频率信号CKE。第四晶体管T4的漏极耦接至提升电路102的输入节点Q,第四晶体管T4的栅极耦接至第三频率信号XCKO,第四晶体管T4的源极耦接至电源电压VSS。第五晶体管T5的漏极耦接至驱动信号端ST(N),第五晶体管T5的栅极连接至第三频率信号XCKO及源极连接至电源电压VSS。第六晶体管T6的漏极耦接至输出节点OUT(N),第六晶体管T6的栅极连接至第三频率信号(XCKO),第六晶体管T6的源极连接至电源电压VSS。The boost driving circuit 104 includes a third transistor T3, a capacitor C1, a fourth transistor T4, a fifth transistor T5, and a sixth transistor T6. The drain and gate of the third transistor T3 are coupled to the drive signal terminal ST(N-1) of the shift register unit 100[n-1] of the previous stage, and the source of the third transistor T3 is coupled to the boosting circuit 102 input node Q. One end of the capacitor C1 is coupled to the input node Q of the boost circuit 102 , and the other end is coupled to the second clock signal CKE. The drain of the fourth transistor T4 is coupled to the input node Q of the boost circuit 102 , the gate of the fourth transistor T4 is coupled to the third frequency signal XCKO, and the source of the fourth transistor T4 is coupled to the power supply voltage VSS. The drain of the fifth transistor T5 is coupled to the driving signal terminal ST(N), the gate of the fifth transistor T5 is connected to the third frequency signal XCKO and the source is connected to the power supply voltage VSS. The drain of the sixth transistor T6 is coupled to the output node OUT(N), the gate of the sixth transistor T6 is connected to the third frequency signal (XCKO), and the source of the sixth transistor T6 is connected to the power supply voltage VSS.

下拉电路106包含一第七晶体管T7以及一第八晶体管T8。第七晶体管T7的漏极耦接至提升电路102的输入节点Q,第七晶体管T7的栅极耦接至下拉电路106的输入节点P,第七晶体管T7的源极耦接至电源电压VSS。第八晶体管T8的漏极耦接至驱动信号端ST(N),第八晶体管T8的栅极耦接至下拉电路106的输入节点P,第八晶体管T8的源极耦接至电源电压VSS。The pull-down circuit 106 includes a seventh transistor T7 and an eighth transistor T8. The drain of the seventh transistor T7 is coupled to the input node Q of the boost circuit 102 , the gate of the seventh transistor T7 is coupled to the input node P of the pull-down circuit 106 , and the source of the seventh transistor T7 is coupled to the power supply voltage VSS. The drain of the eighth transistor T8 is coupled to the driving signal terminal ST(N), the gate of the eighth transistor T8 is coupled to the input node P of the pull-down circuit 106 , and the source of the eighth transistor T8 is coupled to the power supply voltage VSS.

下拉驱动电路108包含一第九晶体管T9、一第十晶体管T10以及一第十一晶体管T11。第九晶体管T9的漏极与栅极耦接至第一频率信号CKO,第九晶体管T9的源极耦接至下拉电路106的输入节点P。第十晶体管T10的漏极连接至下拉电路106的输入节点P,第十晶体管T10的栅极耦接至第三频率信号XCKO,第十晶体管T10的源极耦接至电源电压VSS。第十一晶体管T11的漏极耦接至下拉电路106的输入节点P,第十一晶体管T11的栅极耦接至提升电路102的输入节点Q,第十一晶体管T11的源极耦接至电源电压VSS。The pull-down driving circuit 108 includes a ninth transistor T9 , a tenth transistor T10 and an eleventh transistor T11 . The drain and the gate of the ninth transistor T9 are coupled to the first clock signal CKO, and the source of the ninth transistor T9 is coupled to the input node P of the pull-down circuit 106 . The drain of the tenth transistor T10 is connected to the input node P of the pull-down circuit 106 , the gate of the tenth transistor T10 is coupled to the third frequency signal XCKO, and the source of the tenth transistor T10 is coupled to the power supply voltage VSS. The drain of the eleventh transistor T11 is coupled to the input node P of the pull-down circuit 106, the gate of the eleventh transistor T11 is coupled to the input node Q of the boost circuit 102, and the source of the eleventh transistor T11 is coupled to the power supply voltage VSS.

请同时参考图3以及图4,图4为图3中各信号以及节点的时序图。在时段t0-t1期间,第一频率信号CKO和第四频率信号XCKE处于高电压逻辑准位,第二频率信号CKE以及第三频率信号XCKO处于低电压逻辑准位。来自前一级移位缓存单元100[n-1]的驱动信号端ST(n-1)的驱动信号亦处于高电压逻辑准位,使得晶体管T3会开启(turn on)导通。此时节点Q的电位开始被拉高,导致晶体管T1、T2亦被开启导通第一频率信号CKO,使输出端OUT(n)的电位也开始朝高电压逻辑准位上升。此时因为第三频率信号XCKO处于低电压逻辑准位,所以晶体管T4、T5、T6是不导通,而第一频率信号CKO和第四频率信号XCKE处于高电压逻辑准位,所以晶体管T9、T10导通,使得下拉电路106的输入节点P的电位提升至高电压逻辑准位,因此下拉电路106的晶体管T7、T8皆导通。所以驱动信号端ST(n)的电位仍保持低电压逻辑准位。此时,电容C1会储存节点Q以及第二频率信号CKE之间的电位差。Please refer to FIG. 3 and FIG. 4 at the same time. FIG. 4 is a timing diagram of each signal and node in FIG. 3 . During the period t0-t1, the first clock signal CKO and the fourth clock signal XCKE are at a high voltage logic level, and the second clock signal CKE and the third clock signal XCKO are at a low voltage logic level. The driving signal from the driving signal terminal ST(n−1) of the previous stage shift register unit 100[n−1] is also at a high voltage logic level, so that the transistor T3 is turned on. At this time, the potential of the node Q starts to be pulled high, causing the transistors T1 and T2 to be turned on to conduct the first frequency signal CKO, so that the potential of the output terminal OUT(n) also starts to rise toward the high voltage logic level. At this time, because the third frequency signal XCKO is at a low-voltage logic level, the transistors T4, T5, and T6 are not conducting, while the first frequency signal CKO and the fourth frequency signal XCKE are at a high-voltage logic level, so the transistors T9, T10 is turned on, so that the potential of the input node P of the pull-down circuit 106 is raised to a high voltage logic level, so the transistors T7 and T8 of the pull-down circuit 106 are both turned on. Therefore, the potential of the driving signal terminal ST(n) still maintains a low voltage logic level. At this time, the capacitor C1 stores the potential difference between the node Q and the second clock signal CKE.

在时段t1-t2期间,第一频率信号CKO和第二频率信号CKE处于高电压逻辑准位,第三频率信号XCKO以及第四频率信号XCKE处于低电压逻辑准位。因为来自前一级移位缓存单元100[n-1]的驱动信号端ST(n-1)的驱动信号亦处于低电压逻辑准位,所以晶体管T3会不导通。但因为第二频率信号CKE处于高电压逻辑准位,所以节点Q的电位随着电容C1储存的电位差而浮动提升,因此节点Q的电位还是处于高电压逻辑准位使得晶体管T1、T2被开启导通第一频率信号CKO,使输出端OUT(n)继续保持高电压逻辑准位。同时,下拉电路106的晶体管T7、T8不导通,所以驱动信号端ST(n)的电位会因第一频率信号CKO之故处于高电压逻辑准位,并输出至下一级的移位缓存单元100[n+1]。During the period t1-t2, the first clock signal CKO and the second clock signal CKE are at a high voltage logic level, and the third clock signal XCKO and the fourth clock signal XCKE are at a low voltage logic level. Because the driving signal from the driving signal terminal ST(n−1) of the previous stage shift register unit 100[n−1] is also at a low voltage logic level, the transistor T3 is not turned on. But because the second frequency signal CKE is at a high-voltage logic level, the potential of the node Q floats and rises with the potential difference stored in the capacitor C1, so the potential of the node Q is still at a high-voltage logic level so that the transistors T1 and T2 are turned on The first frequency signal CKO is turned on, so that the output terminal OUT(n) continues to maintain a high voltage logic level. At the same time, the transistors T7 and T8 of the pull-down circuit 106 are not turned on, so the potential of the driving signal terminal ST(n) will be at a high voltage logic level due to the first frequency signal CKO, and output to the shift buffer of the next stage Unit 100[n+1].

在时段t2-t3期间,第二频率信号CKE和第三频率信号XCKO处于高电压逻辑准位,第一频率信号CKO以及第四频率信号XCKE处于低电压逻辑准位。此时,提升电路102以及下拉电路106皆不导通,而晶体管T4、T5、T6是导通,所以输出端OUT(n)的电位会被下拉至低电压逻辑准位,而驱动信号端ST(n)的电位则维持为低电压逻辑准位。During the period t2-t3, the second clock signal CKE and the third clock signal XCKO are at a high voltage logic level, and the first clock signal CKO and the fourth clock signal XCKE are at a low voltage logic level. At this time, neither the boost circuit 102 nor the pull-down circuit 106 is turned on, but the transistors T4, T5, and T6 are turned on, so the potential of the output terminal OUT(n) will be pulled down to a low voltage logic level, and the drive signal terminal ST The potential of (n) is maintained as a low voltage logic level.

本实施例的移位缓存器可应用于液晶显示器的栅极驱动器。The shift register of this embodiment can be applied to a gate driver of a liquid crystal display.

相较于现有技术,本发明的移位缓存器在每一级移位缓存单元中,当起始信号进入本级移位缓存单元时,本级移位缓存单元开始产生输出扫描信号,此时对应像素的晶体管会预先稍微打开,使得上一级的数据信号开始输入,以达到预充电的效果。当本级移位缓存单元的数据信号时序到时,输出扫描信号已到达完全的最高电压,得以将像素内的晶体管完全打开,并快速输入正确的数据信号。另外利用频率信号本身由最高电压下降至最低电压的周期变化,来使得此输出扫描信号的下降时间大幅降低。此外本发明的移位缓存器采用较低的频率,利用起始信号一半频率的频率来驱动晶体管,利用较低的频率来驱动可以延长电路的操作寿命,因此,此移位缓存器电路不仅可以产生较好的输出波形,并且又可以有较长的电路操作寿命以通过可靠度测试。由于消耗功率与操作频率成正比,较低的操作频率产生的功耗也相对较低,因此也比较省电。另外每一级移位缓存单元的起始信号是由上一级移位缓存单元所产生,而不需要由下一级移位缓存单元的输出信号来驱动,所以在不需要再额外设计拟制级移位缓存单元,减少实际应用上的问题。Compared with the prior art, in the shift register of the present invention, in each stage of shift register unit, when the start signal enters the shift register unit of this stage, the shift register unit of this stage starts to generate the output scanning signal, thus At this time, the transistor corresponding to the pixel will be slightly turned on in advance, so that the data signal of the upper stage starts to be input, so as to achieve the effect of precharging. When the timing of the data signal of the shift register unit of this stage arrives, the output scan signal has reached the full maximum voltage, so that the transistor in the pixel can be fully turned on, and the correct data signal can be quickly input. In addition, the cycle change of the frequency signal itself from the highest voltage to the lowest voltage is used to greatly reduce the falling time of the output scanning signal. In addition, the shift register of the present invention adopts a lower frequency, utilizes the frequency of half the frequency of the initial signal to drive the transistor, and utilizes a lower frequency to drive the operating life of the circuit, therefore, the shift register circuit can not only A better output waveform is produced, and a longer circuit operating life can be obtained to pass the reliability test. Since the power consumption is directly proportional to the operating frequency, the power consumption generated by the lower operating frequency is relatively lower, so it also saves more power. In addition, the start signal of each level of shift buffer unit is generated by the upper level of shift buffer unit, and does not need to be driven by the output signal of the next level of shift buffer unit, so no additional design is required Level shift buffer unit, reducing practical application problems.

虽然本发明已以较佳实施例揭露如上,然其并非用以限定本发明,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Those skilled in the art can make various corresponding modifications according to the present invention without departing from the spirit and essence of the present invention. Changes and deformations, but these corresponding changes and deformations should fall within the scope of protection of the appended claims of the present invention.

Claims (14)

1. an offset buffer is characterized in that, comprises:
A plurality of shift cache units, these a plurality of shift cache units connect in the mode of series connection, each shift cache unit is used for exporting according to a drive signal impulse of the previous shift cache unit of a first frequency signal, a second frequency signal, one the 3rd frequency signal, one the 4th frequency signal and this each shift cache unit the output signal of this each shift cache unit, and each shift cache unit comprises:
One promotes circuit (pull-up circuit) is coupled to this first frequency signal, is used to provide this output signal;
One promotes driving circuit (pull-up driving circuit), be coupled to this lifting circuit, be used for conducting when this drive signal impulse of the shift cache unit that receives previous stage and this second frequency signal, and be used for not conducting when receiving the 3rd frequency signal;
One pull-down circuit (pull-down circuit) is used to provide a supply voltage; And
One drop-down driving circuit (pull-down driving circuit), be coupled to input node and this pull-down circuit of this pull-down circuit, be used for this pull-down circuit of conducting when receiving this first frequency signal, and be used for when receiving the 3rd frequency signal or this lifting driving circuit output signal this pull-down circuit of not conducting.
2. offset buffer as claimed in claim 1 is characterized in that, this lifting circuit comprises:
One the first transistor, the drain electrode of this first transistor are coupled to this first frequency signal, and the grid of this first transistor is coupled to the input node of this lifting circuit, and the source electrode of this first transistor is coupled to an output node; And
One transistor seconds, the drain electrode of this transistor seconds are coupled to this first frequency signal, and the grid of this transistor seconds is coupled to the input node of this lifting circuit, and the source electrode of this transistor seconds is coupled to a drive signal end.
3. offset buffer as claimed in claim 2 is characterized in that, this lifting driving circuit comprises:
One the 3rd transistor, the 3rd transistor drain and grid are coupled to the drive signal end of the shift cache unit of previous stage, and the 3rd transistorized source electrode is coupled to the input node of this lifting circuit;
One electric capacity, one end are coupled to the input node of this lifting circuit, and the other end is coupled to this second frequency signal;
One the 4th transistor T, 4, the four transistor drain are coupled to the input node of this lifting circuit, and the 4th transistorized grid is coupled to the 3rd frequency signal, and the 4th transistorized source electrode is coupled to this supply voltage;
One the 5th transistor T, 5, the five transistor drain are coupled to this drive signal end, and the 5th transistorized grid is connected to the 3rd frequency signal and source electrode is connected to supply voltage; And
One the 6th transistor, the 6th transistor drain is coupled to this output node, and the 6th transistorized grid is connected to the 3rd frequency signal, and the 6th transistorized source electrode is connected to this supply voltage.
4. offset buffer as claimed in claim 3 is characterized in that, this pull-down circuit comprises:
One the 7th transistor, the 7th transistor drain are coupled to the input node of this lifting circuit, and the 7th transistorized grid is coupled to the input node of this pull-down circuit, and the 7th transistorized source electrode is coupled to this supply voltage;
One the 8th transistor T, 8, the eight transistor drain are coupled to this drive signal end, and the 8th transistorized grid is coupled to the input node of this pull-down circuit, and the 8th transistorized source electrode is coupled to this supply voltage.
5. offset buffer as claimed in claim 4 is characterized in that, this drop-down driving circuit comprises:
One the 9th transistor, the 9th transistor drain and grid are coupled to this first frequency signal, and the 9th transistorized source electrode is coupled to the input node of this pull-down circuit;
The tenth transistor, the tenth transistor drain are connected to the input node of this pull-down circuit, and the tenth transistorized grid is coupled to the 3rd frequency signal, and the tenth transistorized source electrode is coupled to this supply voltage;
The 11 transistor, the 11 transistor drain is coupled to the input node of this pull-down circuit, and the 11 transistorized grid is coupled to the input node of this lifting circuit, and the 11 transistorized source electrode is coupled to this supply voltage.
6. offset buffer as claimed in claim 1, it is characterized in that, this first frequency signal is spent with the phasic difference mutually 180 of this second frequency signal, the 3rd frequency signal is spent with the phasic difference mutually 180 of the 4th frequency signal, this first frequency signal is spent with the phasic difference mutually 90 of the 3rd frequency signal, and this second frequency signal is spent with the phasic difference mutually 90 of the 4th frequency signal.
7. offset buffer as claimed in claim 1 is characterized in that this bit shift register is applied to a LCD.
8. a shift cache unit is characterised in that, comprises:
One promotes circuit is coupled to this first frequency signal, is used to provide this output signal;
One promotes driving circuit is used for conducting when this drive signal impulse of the shift cache unit that receives previous stage and this second frequency signal, and is used for not conducting when receiving the 3rd frequency signal;
One pull-down circuit is used to provide a supply voltage; And
One drop-down driving circuit is coupled to one of this pull-down circuit and imports node, is used in this this pull-down circuit of first frequency signal conduction of reception, and is used for when receiving the 3rd frequency signal or this lifting driving circuit output signal this pull-down circuit of not conducting.
9. shift cache unit as claimed in claim 8 is characterized in that, this lifting circuit comprises:
One the first transistor, the drain electrode of this first transistor are coupled to this first frequency signal, and the grid of this first transistor is coupled to the input node of this lifting circuit, and the source electrode of this first transistor is coupled to an output node; And
One transistor seconds, the drain electrode of this transistor seconds are coupled to this first frequency signal, and the grid of this transistor seconds is coupled to the input node of this lifting circuit, and the source electrode of this transistor seconds is coupled to a drive signal end.
10. shift cache unit as claimed in claim 9 is characterized in that, this lifting driving circuit comprises:
One the 3rd transistor, the 3rd transistor drain and grid are coupled to the drive signal end of the displacement buffer unit of previous stage, and the 3rd transistorized source electrode is coupled to the input node of this lifting circuit;
One electric capacity, one end are coupled to the input node of this lifting circuit, and the other end is coupled to this second frequency signal;
One the 4th transistor, the 4th transistor drain are coupled to the input node of this lifting circuit, and the 4th transistorized grid is coupled to the 3rd frequency signal, and the 4th transistorized source electrode is coupled to this supply voltage;
One the 5th transistor, the 5th transistor drain are coupled to this drive signal end, and the 5th transistorized grid is connected to this second frequency signal and source electrode is connected to supply voltage; And
One the 6th transistor T, 6, the six transistor drain are coupled to this output node, and the 6th transistorized grid is connected to the 3rd frequency signal, and the 6th transistorized source electrode is connected to this supply voltage.
11. shift cache unit as claimed in claim 10 is characterized in that, this pull-down circuit comprises:
One the 7th transistor, the 7th transistor drain are coupled to the input node of this lifting circuit, and the 7th transistorized grid is coupled to the input node of this pull-down circuit, and the 7th transistorized source electrode is coupled to this supply voltage;
One the 8th transistor, the 8th transistor drain are coupled to this drive signal end, and the 8th transistorized grid is coupled to the input node of this pull-down circuit, and the 8th transistorized source electrode is coupled to this supply voltage.
12. shift cache unit as claimed in claim 11 is characterized in that, this drop-down driving circuit comprises:
One the 9th transistor, the 9th transistor drain and grid are coupled to this first frequency signal, and the 9th transistorized source electrode is coupled to the input node of this pull-down circuit;
The tenth transistor, the tenth transistor drain are connected to the input node of this pull-down circuit, and the tenth transistorized grid is coupled to the 3rd frequency signal, and the tenth transistorized source electrode is coupled to this supply voltage;
The 11 transistor, the 11 transistor drain is coupled to the input node of this pull-down circuit, and the 11 transistorized grid is coupled to the input node of this lifting circuit, and the 11 transistorized source electrode is coupled to this supply voltage.
13. shift cache unit as claimed in claim 8, it is characterized in that, this first frequency signal is spent with the phasic difference mutually 180 of this second frequency signal, the 3rd frequency signal is spent with the phasic difference mutually 180 of the 4th frequency signal, this first frequency signal is spent with the phasic difference mutually 90 of the 3rd frequency signal, and this second frequency signal is spent with the phasic difference mutually 90 of the 4th frequency signal.
14. shift cache unit as claimed in claim 8 is characterized in that, this drive signal impulse is a triggering initial pulse.
CN2008101266577A 2008-06-17 2008-06-17 Shift buffer Active CN101303895B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008101266577A CN101303895B (en) 2008-06-17 2008-06-17 Shift buffer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2008101266577A CN101303895B (en) 2008-06-17 2008-06-17 Shift buffer

Publications (2)

Publication Number Publication Date
CN101303895A true CN101303895A (en) 2008-11-12
CN101303895B CN101303895B (en) 2011-07-27

Family

ID=40113757

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008101266577A Active CN101303895B (en) 2008-06-17 2008-06-17 Shift buffer

Country Status (1)

Country Link
CN (1) CN101303895B (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101976581A (en) * 2010-01-18 2011-02-16 友达光电股份有限公司 Shift register circuit
US7953201B2 (en) 2008-12-12 2011-05-31 Au Optronics Corp. Shift register with pre-pull-down module to suppress a spike
US20110234577A1 (en) * 2010-03-24 2011-09-29 Au Optronics Corporation Shift register with low power consumption
CN103035297A (en) * 2012-10-12 2013-04-10 友达光电股份有限公司 Shift register
CN104252853A (en) * 2014-09-04 2014-12-31 京东方科技集团股份有限公司 Shift register unit, driving method, gate drive circuit and display device
CN106157893A (en) * 2016-09-09 2016-11-23 京东方科技集团股份有限公司 Shift register cell and driving method, drive circuit and display device
WO2020192476A1 (en) * 2019-03-26 2020-10-01 京东方科技集团股份有限公司 Multi-path selection circuit and driving method, and multi-path selection unit and display apparatus
CN111785205A (en) * 2020-08-03 2020-10-16 四川遂宁市利普芯微电子有限公司 Pre-charging circuit of common cathode LED display screen driving chip
CN115083348A (en) * 2022-07-22 2022-09-20 合肥京东方显示技术有限公司 A kind of GOA unit and its driving method, GOA circuit
WO2023019866A1 (en) * 2021-08-16 2023-02-23 惠科股份有限公司 Driving circuit of display panel and driving device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5222082A (en) * 1991-02-28 1993-06-22 Thomson Consumer Electronics, S.A. Shift register useful as a select line scanner for liquid crystal display
US5517542A (en) * 1995-03-06 1996-05-14 Thomson Consumer Electronics, S.A. Shift register with a transistor operating in a low duty cycle
TWI298478B (en) * 2002-06-15 2008-07-01 Samsung Electronics Co Ltd Method of driving a shift register, a shift register, a liquid crystal display device having the shift register

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7953201B2 (en) 2008-12-12 2011-05-31 Au Optronics Corp. Shift register with pre-pull-down module to suppress a spike
CN101976581B (en) * 2010-01-18 2013-04-10 友达光电股份有限公司 Shift register circuit
CN101976581A (en) * 2010-01-18 2011-02-16 友达光电股份有限公司 Shift register circuit
US20110234577A1 (en) * 2010-03-24 2011-09-29 Au Optronics Corporation Shift register with low power consumption
US8537094B2 (en) * 2010-03-24 2013-09-17 Au Optronics Corporation Shift register with low power consumption and liquid crystal display having the same
CN103035297B (en) * 2012-10-12 2015-04-29 友达光电股份有限公司 Shift register
CN103035297A (en) * 2012-10-12 2013-04-10 友达光电股份有限公司 Shift register
CN104252853A (en) * 2014-09-04 2014-12-31 京东方科技集团股份有限公司 Shift register unit, driving method, gate drive circuit and display device
CN106157893A (en) * 2016-09-09 2016-11-23 京东方科技集团股份有限公司 Shift register cell and driving method, drive circuit and display device
WO2020192476A1 (en) * 2019-03-26 2020-10-01 京东方科技集团股份有限公司 Multi-path selection circuit and driving method, and multi-path selection unit and display apparatus
CN111785205A (en) * 2020-08-03 2020-10-16 四川遂宁市利普芯微电子有限公司 Pre-charging circuit of common cathode LED display screen driving chip
CN111785205B (en) * 2020-08-03 2023-08-25 四川遂宁市利普芯微电子有限公司 Pre-charging circuit of common-cathode LED display screen driving chip
WO2023019866A1 (en) * 2021-08-16 2023-02-23 惠科股份有限公司 Driving circuit of display panel and driving device
US11978377B2 (en) 2021-08-16 2024-05-07 HKC Corporation Limited Driving circuit and driving device for display panel
CN115083348A (en) * 2022-07-22 2022-09-20 合肥京东方显示技术有限公司 A kind of GOA unit and its driving method, GOA circuit

Also Published As

Publication number Publication date
CN101303895B (en) 2011-07-27

Similar Documents

Publication Publication Date Title
EP3828875B1 (en) Shift register unit and driving method therefor, gate driving circuit and display apparatus
TWI407443B (en) Shift register
TWI394134B (en) Shift register with pre-pull-down circuit
CN101303895A (en) shift register
CN101369460B (en) Shift buffer
EP3832637A1 (en) Shift register unit and driving method thereof, gate driving circuit and display device
US8816949B2 (en) Shift register circuit and image display comprising the same
KR101032945B1 (en) Shift register and display device including same
EP3933817A1 (en) Shift register unit and driving method therefor, gate driving circuit, and display device
US9501989B2 (en) Gate driver for narrow bezel LCD
US7949086B2 (en) Shift register
CN100442343C (en) Liquid crystal display device
US10971104B2 (en) Shift register and method for driving the same, gate driving circuit, and display device
TWI417859B (en) Gate driver and operating method thereof
US10748465B2 (en) Gate drive circuit, display device and method for driving gate drive circuit
CN101364446B (en) shift register
CN110880304B (en) Shift register unit, grid driving circuit, display device and driving method
US9041693B2 (en) Scan driver and organic light emitting display using the scan driver
CN101447232B (en) Shift buffer of pre-pull-down forward stage surge
KR20090085424A (en) Display device and driving method
JP2014157638A (en) Shift register, and display device with the same
KR102015848B1 (en) Liquid crystal display device
KR20090083565A (en) Display device and driving method
TWI398845B (en) Shift register
WO2020187043A1 (en) Shift register unit and drive method thereof, gate drive circuit and display device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant