CN101286521A - Encapsulation structure for image sensor - Google Patents

Encapsulation structure for image sensor Download PDF

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Publication number
CN101286521A
CN101286521A CNA2007102004187A CN200710200418A CN101286521A CN 101286521 A CN101286521 A CN 101286521A CN A2007102004187 A CNA2007102004187 A CN A2007102004187A CN 200710200418 A CN200710200418 A CN 200710200418A CN 101286521 A CN101286521 A CN 101286521A
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CN
China
Prior art keywords
substrate
flange
image sensor
image sensing
encapsulation structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007102004187A
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Chinese (zh)
Inventor
曾富岩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Original Assignee
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Hon Hai Precision Industry Co Ltd filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CNA2007102004187A priority Critical patent/CN101286521A/en
Priority to US11/873,235 priority patent/US20080251705A1/en
Publication of CN101286521A publication Critical patent/CN101286521A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Abstract

The invention provides an encapsulating structure of an image sensor, which comprises a substrate, an image sensing chip affixed to the substrate and a flange arranged on the substrate, wherein, the substrate is provided with a first surface used for affixing the flange and the image sensing chip and a second surface provided with a plurality of outer contacts; the inner side wall of the flange is provided with a plurality of inner contacts which are electrically communicated with the outer contacts on the second surface; the image sensing chip is provided with a plurality of welding pads which are respectively and electrically connected with the inner contacts on the flange. As the inner contacts are arranged on the flange, the encapsulating structure of the image sensor needs not to arrange the inner contacts on the substrate, thus reducing the utilization area of the substrate, and further reducing the volume of the substrate and the image sensor.

Description

Encapsulation structure for image sensor
Technical field
The present invention is about a kind of image sensor, especially about a kind of encapsulation structure for image sensor.
Background technology
Along with the continuous development of science and technology, portable electronic equipment such as mobile phone are used increasingly extensively, also day by day trend towards simultaneously light and handy, attractive in appearance and multifunction, and wherein camera function is the additional function of popular in recent years mobile phone.The numerical camera mould that is applied to mobile phone not only will satisfy compact requirement, and it also must have higher photographic property.And the image sensor in the digital camera image sensing module is one of principal element of decision digital camera volume size, and therefore, the encapsulating structure that improves image sensor will help dwindling the volume of image sensing module, and then can dwindle the volume of camera.
Existing a kind of image sensor, as shown in Figures 1 and 2, this image sensor comprises a substrate 1, a viscose glue body 2, a plurality of bonding wire 3, image sensing wafer 4, a flange 5 and a transparency cover 6.Wherein said viscose glue body 2 is used for the upper surface 7 of cementation image sensing wafer 4 in substrate, and electrically connects the inner contact 9 of the weld pad 8 of image sensing wafer 4 to substrate 1 with bonding wire 3.Described flange 5 is used for and transparency cover 6 airtight image sensing wafers 4.
The inner contact 9 of the substrate 1 of above-mentioned image sensor be distributed in image sensing wafer 4 the zone around, utilize bonding wire 3 to make the weld pad 8 on inner contact 9 and the image sensing wafer 4 electrically conduct, thereby the image data that is sensed on the image sensing wafer 4 is derived, but, because substrate 1 is provided with inner contact 9, increase the usable floor area of this substrate 1, thereby increased the volume of this image sensor, and then can increase the volume of camera.
Summary of the invention
In view of this, be necessary to provide a kind of encapsulation structure of image sensing chip with substrate of less usable floor area.
A kind of encapsulation structure for image sensor, it comprises that a substrate, one are attached at the image sensing wafer on the substrate, a flange that is arranged on the described substrate.This substrate has the first surface and the second surface that is provided with a plurality of outer contacts that are used to attach described flange and image sensing wafer.Described flange inner wall is provided with a plurality of inner contacts, and the outer contact of this inner contact and second surface electrically conducts.Described image sensing wafer has a plurality of weld pads, and these a plurality of weld pads are electrically connected with inner contact on the flange respectively.
Above-mentioned encapsulation structure for image sensor is owing to be arranged on the inner contact on the substrate on the flange, and therefore, substrate no longer needs to be provided with inner contact, thereby can reduce the usable floor area of substrate, and then has dwindled the volume of substrate and image sensor.
Description of drawings
Fig. 1 is the schematic diagram of the encapsulating structure of existing a kind of image sensing wafer;
Fig. 2 is the substrate of existing a kind of image sensing wafer and the planar structure schematic diagram that combination has image sensing wafer;
Fig. 3 is the substrate of the encapsulation structure for image sensor that provides of first embodiment of the invention and the planar structure schematic diagram that combination has image sensing wafer;
Fig. 4 is the schematic cross-section of Fig. 3 along the IV-IV line;
Fig. 5 is the schematic cross-section of the encapsulating structure of the image sensor among Fig. 3;
Fig. 6 is the schematic cross-section of the encapsulating structure of the image sensor that provided of second embodiment;
Fig. 7 is the substrate of image sensor of Fig. 6 and the planar structure schematic diagram that combination has image sensing wafer.
Embodiment
For the present invention being done further explanation, lift following preferred embodiment and conjunction with figs. and be described in detail as follows.
See also Fig. 3 to Fig. 5, the encapsulation structure for image sensor that is provided of first embodiment of the invention, it comprises a substrate 10, image sensing wafer 11, flange 12,13, one transparency covers 14 of many bonding wires and a viscose glue body 15.Described image sensing wafer 11 is attached on the substrate 10 by viscose glue body 15.Described flange 12 is arranged at the edge of described substrate 10, and described transparency cover 14 is covered on the flange 12, and described flange 12 connects together by viscose glue body 15 glue with substrate 10 with transparency cover 14 and flange 12 and is used to seal the described image sensing wafer 11 that is attached on the substrate 10.
Described substrate 10 can be a kind of circuit board with a first surface 101 and a second surface 102, and it is for being formed with circuit pattern bilayer or the multilayer board or the ceramic circuit board of (figure does not show).
This first surface 101 is provided with viscous crystal region 103, and preferably, described viscous crystal region 103 is arranged at the central authorities of the first surface 101 of described substrate 10.
This second surface 102 is provided with a plurality of outer contacts 104, and preferably, described a plurality of outer contacts 104 are arranged at the periphery of second surface 102, with the utilized area of second surface 102 central authorities that enlarge substrate 10, as is used for heat radiation.
Be provided with a plurality of jacks 105 through substrate 10 around the described substrate 10, its number is suitable with the number of outer contact 104.
The thermoset epoxy glue that described viscose glue body 15 can spread for liquid state or thickness colloidal state as elargol or B b stage resin b glue, also can be the ultraviolet curing colloid.Be elargol in the present embodiment.
Described image sensing wafer 11 can have a sensitive surface 111 and the back side 112 corresponding to this sensitive surface 111 for a kind of.This image sensor can be an integrated circuit (IC) chip, is used for the captured image of the sensing information of (figure does not show).
The periphery of this sensitive surface 111 is provided with a plurality of weld pads 113, and the number of the outer contact 104 of the number of this weld pad 113 and substrate 10 is suitable.
The viscous crystal region 103 of the first surface 101 of described substrate 10 is fixed at this back side 112 by viscose glue body 15.
The uncovered that described flange 12 is a border seal does not have the shaped as frame element at the end, and its height is greater than the thickness of described image sensing wafer 11.
The shaped as frame shape of this flange 12 is identical with the shape of described substrate 10, if promptly substrate 10 is circular, then also for circular, described in the present embodiment substrate is a rectangle to the shape that this flange 12 surrounded, so the shape that this flange 12 surrounded also is rectangle.The area that described flange 12 is enclosed is suitable with the area of substrate 10.
This flange 12 can be fixed in the periphery of the first surface 101 of described substrate 10 by viscose glue body 15.
These flange 12 madial walls are provided with a plurality of inner contacts 121, and the number of the outer contact 104 of the number of this inner contact 121 and weld pad 113 and substrate 10 is suitable, and preferably, described inner contact 121 arrives the thickness of the minimum constructive height of substrate 10 greater than image sensing wafer 11.
Inner contact 121 on the described flange 12 is electrically connected with outer contact 104 on the substrate 10, the inside of this flange 12 is provided with the lead 122 that links to each other with described a plurality of inner contacts 121 in the present embodiment, and described lead 122 extends out from flange 12, and the length of the part that extends out from flange 12 is greater than the thickness of substrate 10, these lead 122 1 ends and inner contact 121 are electrically connected, the other end passes corresponding jack 105 on the substrate 10, and is electrically connected with the outer contact 104 of substrate 10.
Described bonding wire 13 is used to connect the weld pad 113 and inner contact 121 of image sensing wafer 11, and image sensing wafer 11 is electrical connected in the outer contact 104 of substrate 10.The material of this bonding wire 13 can be identical with the material of weld pad 113 and inner contact 121.
Described transparency cover 14 can be glass or perspex, even can be lens, and it is used for sealing image sensing wafer 10 with described substrate 10, flange 12, to avoid this image sensing wafer 10 by pollutions such as dusts.
Seeing also Fig. 3 and Fig. 4, is example with the encapsulation structure for image sensor of assembling first embodiment and being provided, and its assemble method may further comprise the steps:
Step 1: described substrate 10 is provided, and this substrate 10 comprises that a first surface with viscous crystal region 103 101, one are provided with the second surface 102 of a plurality of outer contacts 104 and the suitable jack 105 of number of number and outer contact 104.
Step 2: viscose glue body 15 is coated with on the viscous crystal region 103 of being located at substrate 10, and image sensing wafer 11 is attached on this viscous crystal region 103.
Step 3: viscose glue body 15 is coated with is located at an end that reveals the flange 12 that lead 122 is arranged, and this viscose glue body 15 does not flood the part that described lead 122 extends for flange 12.
Step 4: the lead 122 of flange 12 is inserted in the corresponding jack 105 of substrate 10, extrudes and fixes this flange 122, and the lead 122 and the outer contact 104 of substrate 10 are electrical connected in the edge of substrate 10.
Step 5: bonding wire 13 is welded between the inner contact 121 of the weld pad 113 of image sensing wafer 11 and flange 12.
Step 6: be coated with viscose glue body 15 at flange 12 with respect to the other end that is provided with lead 122, and transparency cover 14 is covered on the flange 12, make transparency cover 14, flange 12 and substrate 10 sealing image sensing wafers 11 in its formed space.
See also Fig. 6 and Fig. 7, the encapsulation structure for image sensor that second embodiment is provided comprises a substrate 20, image sensing wafer 21, a flange 22,23, one transparency covers 24 of many bonding wires and a viscose glue body 25.Described image sensing wafer 21 is attached on the substrate 20 by viscose glue body 25.As shown in Figure 7, the encapsulating structure of the encapsulating structure of the image sensor that provided of second embodiment and first embodiment different is described substrate 20 is one-body molded with described flange 22.Described flange 22 can extend in substrate 20 from substrate 20 edge-perpendicular, also can be away from substrate 20 directions from substrate 20 edges extends, described in the present embodiment flange 22 is away from substrate 20 directions from substrate 20 edges and extends, and the flex plate that is formed in one of this flange 22 and substrate 20.
Consult Fig. 6, the difference of the substrate 10 that the described substrate 20 and first embodiment are provided is, when described substrate 20 moulding, one-body moldedly at the edge on 20 4 limits of substrate respectively goes out the flange 22 identical with flange 12 shapes of first embodiment.
Described substrate 20 comprises a first surface 201 and this first surface 201 opposing second surface 202, and described second surface 202 is provided with a plurality of outer contacts 204.
The madial wall of this flange 22 is provided with a plurality of inner contacts 221, and this inner contact 221 is electrically connected with the outer contact 204 of described substrate 20 second surfaces 202.
When assembling, only flange 22 edges are attached at 21 4 limits of image sensing wafer on the substrate 10, and fold towards the one side of image sensing wafer 21, other step, for example bonding wire 23 is welded between inner contact 221 and the image sensing wafer 21, utilize viscose glue body 25 to be attached on the flange 22 transparency cover 24, the assemble method of the encapsulating structure of the image sensor that is provided with first embodiment is consistent.So far, the image sensor that provided of second embodiment has encapsulated and has finished.
Be understandable that, when flange 22 be from substrate 20 edge-perpendicular when substrate 20 extends, also can omit above-mentioned folding step, only need image sensing wafer 21 is attached on the substrate 20, bonding wire 23 is welded between inner contact 221 and the image sensing wafer 21 and with transparency cover 24 utilizes viscose glue body 25 to be attached on the flange 22, this image sensor just encapsulation finishes.
What certainly expect is, intensity for reinforcement substrate 20 and flange 22, can be outside substrate 20 and flange 22 sidewall mount harder sheet material (figure does not show) and strengthen substrate 20 and flange 22 intensity, also can come its intensity, thereby this flange 22 there is the enough intensity of appearing vividly to support transparency cover 24 with filling viscose glue in the crack between flange 22 after the bending and the image sensing wafer 21.
The inner contact that the above-mentioned encapsulation structure for image sensor that first and second embodiment provided will be located at substrate periphery is arranged on the another side with respect to contiguous substrate 10,20 of the madial wall of described flange 12,22 or flange 12,22, make the usable floor area of substrate 10,20 become littler, thereby reduced the volume of image sensor.
In addition, those skilled in the art also can do other variation in spirit of the present invention, as long as it does not depart from technique effect of the present invention, all should be included within the present invention's scope required for protection.

Claims (10)

1. encapsulation structure for image sensor, it is characterized in that: comprise that a substrate, one are attached at the image sensing wafer on the substrate, a flange that is arranged on the described substrate, this substrate has the first surface and the second surface that is provided with a plurality of outer contacts that are used to attach described flange and image sensing wafer, described flange inner wall is provided with a plurality of inner contacts, the outer contact of this inner contact and second surface electrically conducts, described image sensing wafer has a plurality of weld pads, and these a plurality of weld pads are electrically connected with inner contact on the flange respectively.
2. encapsulation structure for image sensor as claimed in claim 1 is characterized in that: described flange and substrate are one-body molded, and extend from described substrate edges.
3. encapsulation structure for image sensor as claimed in claim 2 is characterized in that: described flange extends perpendicular to substrate from substrate edges.
4. encapsulation structure for image sensor as claimed in claim 2 is characterized in that: described flange is towards extending away from substrate edges, and along the image sensing wafer edge that is attached on the substrate, and folds and form towards a side of image sensing wafer.
5. encapsulation structure for image sensor as claimed in claim 4 is characterized in that: described substrate and flange are the one flex plate.
6. image sensing encapsulating structure as claimed in claim 4 is characterized in that: the inner contact of described flange is electrically connected with the outer contact of substrate.
7. encapsulation structure for image sensor as claimed in claim 1 is characterized in that: set inner contact is to the minimum range of the substrate thickness greater than image sensing wafer on the described flange.
8. encapsulation structure for image sensor as claimed in claim 1 is characterized in that: described encapsulation structure of image sensing chip also comprises a transparency cover, and itself and described flange join, and is used for sealing described image sensing wafer together with described flange, substrate.
9. encapsulation structure for image sensor as claimed in claim 1 is characterized in that: described inner contact is arranged at the one side with respect to contiguous substrate of flange inner wall or flange.
10. encapsulation structure for image sensor as claimed in claim 1 is characterized in that: described encapsulation structure for image sensor also comprises a viscose glue body, and image sensing wafer and substrate are used to bond.
CNA2007102004187A 2007-04-10 2007-04-10 Encapsulation structure for image sensor Pending CN101286521A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CNA2007102004187A CN101286521A (en) 2007-04-10 2007-04-10 Encapsulation structure for image sensor
US11/873,235 US20080251705A1 (en) 2007-04-10 2007-10-16 Image sensor chip package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2007102004187A CN101286521A (en) 2007-04-10 2007-04-10 Encapsulation structure for image sensor

Publications (1)

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CN102336389A (en) * 2010-07-22 2012-02-01 财团法人工业技术研究院 Integrated device of Micro-electro-mechanical Systems (MEMS) device and circuit chip and production method thereof
US8809972B2 (en) 2010-06-30 2014-08-19 Industrial Technology Research Institute Apparatus integrating microelectromechanical system device with circuit chip and methods for fabricating the same

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EP2840375A1 (en) * 2013-08-19 2015-02-25 Sensirion AG Device with a micro- or nanoscale structure
EP2871455B1 (en) 2013-11-06 2020-03-04 Invensense, Inc. Pressure sensor
EP2871456B1 (en) 2013-11-06 2018-10-10 Invensense, Inc. Pressure sensor and method for manufacturing a pressure sensor
EP3614115A1 (en) 2015-04-02 2020-02-26 InvenSense, Inc. Pressure sensor
US11225409B2 (en) 2018-09-17 2022-01-18 Invensense, Inc. Sensor with integrated heater
WO2020236661A1 (en) 2019-05-17 2020-11-26 Invensense, Inc. A pressure sensor with improve hermeticity

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US6483101B1 (en) * 1999-12-08 2002-11-19 Amkor Technology, Inc. Molded image sensor package having lens holder
US6603183B1 (en) * 2001-09-04 2003-08-05 Amkor Technology, Inc. Quick sealing glass-lidded package
TWI321342B (en) * 2004-11-05 2010-03-01 Altus Technology Inc An integrate circuit chip encapsulation and the method of manufacturing it
JP2008034787A (en) * 2006-06-30 2008-02-14 Matsushita Electric Ind Co Ltd Solid-state imaging apparatus and its manufacturing method, and semiconductor apparatus and its manufacturing method

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Publication number Priority date Publication date Assignee Title
US8809972B2 (en) 2010-06-30 2014-08-19 Industrial Technology Research Institute Apparatus integrating microelectromechanical system device with circuit chip and methods for fabricating the same
US9227841B2 (en) 2010-06-30 2016-01-05 Industrial Technology Research Institute Apparatus integrating microelectromechanical system device with circuit chip and methods for fabricating the same
CN102336389A (en) * 2010-07-22 2012-02-01 财团法人工业技术研究院 Integrated device of Micro-electro-mechanical Systems (MEMS) device and circuit chip and production method thereof
CN102336389B (en) * 2010-07-22 2014-05-28 财团法人工业技术研究院 Integrated device of Micro-electro-mechanical Systems (MEMS) device and circuit chip and production method thereof

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