CN101278184B - Shear measuring method and its device - Google Patents
Shear measuring method and its device Download PDFInfo
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- CN101278184B CN101278184B CN2006800361588A CN200680036158A CN101278184B CN 101278184 B CN101278184 B CN 101278184B CN 2006800361588 A CN2006800361588 A CN 2006800361588A CN 200680036158 A CN200680036158 A CN 200680036158A CN 101278184 B CN101278184 B CN 101278184B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N19/00—Investigating materials by mechanical methods
- G01N19/04—Measuring adhesive force between materials, e.g. of sealing tape, of coating
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/0014—Type of force applied
- G01N2203/0025—Shearing
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Abstract
A resonant shear measuring method for simply measuring a resonant shear in a short time by Fourier-transforming the damping curve of the vibration on one side of a sample during the measurement of the shear response of the sample to obtain the resonant shear curve. An input signal (Uin) is inputted into a horizontal drive section of a resonant shear measurement unit. The vibration of one side of a sample clamped between the solid surfaces of the resonant shear measurement unit is detected as an output signal (Uout) by means of a displacement gauge. The output signal (Uout) along with the input signal (Uin) are inputted into a resonant shear measurement device. The shear response of the sample is measured together with the variation of the film thickness. The damping curve of the vibration of the one side of the sample is Fourier-transformed by a Fourier transform section (5B) to obtain the resonant shear curve. A twin-path shear stress measurement device for precisely measuring a shear stress by a twin-path method for measuring the distance between opaque substrates.
Description
Technical field
No matter the present invention relates to is that in transparent or opaque which all can be between 2 solid surface or the shear measuring method and the device thereof of the mensuration expected of film therebetween; More specifically; Be particularly related to (1) carry out rapid, easy, general and accurate resonance shear measuring method and the device thereof of the mensuration of the high liquid film of film that thickness easily changes and volatility etc., (2) through based on the surface spacing of two-way type interferometric method from metering, change the interval of two solid surface and assay method and the device thereof that the shear stress between the fluid film liquid crystal film macromolecule adsorbed layer that sandwiches etc. is measured therebetween with nano-scale.
Background technology
(1) the at first the 1
With the technology that the shear loading of the sample that sandwiches in the solid surface (liquid liquid crystal etc.) is learnt with the variation of the thickness of nano-scale, be important in the understanding of the directive textureization of friction, lubrication between solid surface and liquid liquid crystal molecule and the control.In the resonance shear measuring that the shear loading of sample is measured, make single side surface vibrate and give shearing, and near resonant frequency, this response is kept watch on sample along horizontal direction.The result that this shear loading is drawn out as the function of frequency is resonance curve.The height of resonant frequency and resonance peak is to the rerum natura sensitivity of the sample between solid surface and to also stronger from the outside vibration noise of determinator.
In the past; In order critically to learn the shear loading of the sample that sandwiches in the solid surface; Carry out following action: while near resonant frequency, change frequency the shear loading of sample is measured, obtained the resonance shear curve that frequency is drawn out thus.For example in following non-patent literature 1, disclose such technology.
In addition, the accurate shear stress determinator (following patent documentation 1) of conduct based on the application inventor's motion proposed.
Patent documentation 1: No. 3032152 communique of patent
Non-patent literature 1: No. 1 p34-41 2002 of liquid crystal the 6th volume
(2) the 2nd, the application inventor has proposed the accurate shear stress determinator (with reference to following patent documentation 2) that can be accurately move about and measure the rheology in the short space of nano-scale (rheology).
In addition, even proposed surface force determinator and the method (with reference to following patent documentation 3) thereof that sample that light can't see through also can be measured the surface force between sample with high precision.
Patent documentation 2: No. 3032152 communique of patent
Patent documentation 3: the spy opens the 2001-108603 communique
But; In the technology in the past of above-mentioned (1); Owing to measure while changing near vibration frequency shear loading to sample resonant frequency; So it is constant to need for a long time thickness with sample to remain, there is the problem of the mensuration that is difficult to carry out the high fluid film of film that thickness easily changes and volatility.
In addition; Technology in the past as above-mentioned (2); For the viscoelasticity and the friction, lubrication characteristic of the sample that surface spacing sandwiched in measuring on one side to the surface with the resolution of 0.1 nanometer are on one side measured, employing will be based on the surface spacing of the optical interferometry that uses isochrome preface interference fringe (FECO) from measuring and the shear method that determinator makes up that resonates.This method is owing to use through surperficial light, so the sample that sandwiches in substrate and the substrate surface is limited to the sample of photopermeability.Especially, substrate roughly is limited to mica in practicality, even also only the thin slice (thickness is about 2 μ m) of sapphire or glass is used for substrate in test.
In addition, two-way type surface force determinator (above-mentioned patent documentation 3) is the device of measuring the power of upper and lower surfaces effect, can't carry out shear measuring.
Summary of the invention
No matter the object of the present invention is to provide a kind of sample is the shear measuring method and the device thereof of in transparent or opaque which mensuration that all can expect.
When more specifically narrating,
In view of above-mentioned condition; The 1st purpose of the present invention is to provide a kind of resonance shear measuring method; Wherein, in the mensuration of the shear loading of sample, the die-away curve of the vibration of the single side surface of sample is carried out Fourier transform; Obtain resonance shear curve, measure thereby can carry out its easy short time.
In addition; In view of above-mentioned condition, the 2nd purpose of the present invention is to provide a kind of two-way type shear stress assay method and device thereof, wherein; Use is the double circuit method that can measure the distance between substrate under the opaque situation at substrate or sample, can carry out accurate shear stress and measure.
The application invention is in order to reach above-mentioned purpose,
(1) in being total to the Chun shear measuring method, with input signal U
InBe input to the horizontal drive portion of resonance shear measuring unit, to the sample that is sandwiched in the solid surface in this resonance shear measuring unit, the use displacement meter detects the vibration of its single side surface and is used as output signal U
Out, and with said input signal U
InTogether, with said output signal U
OutBe input to resonance shear WT-MSR; The shear loading of the sample that is sandwiched in the solid surface with said resonance shear measuring unit measures with the variation of thickness; It is characterized in that; Die-away curve to the vibration of the single side surface of said sample carries out Fourier transform, obtains resonance shear curve.
(2) in the resonance shear measuring method, with input signal U
InBe input to the horizontal drive portion of resonance shear measuring unit, between solid surface, do not sandwich sample and with solid surface itself as sample, the use displacement meter detects the vibration of the single side surface of the sample in this resonance shear measuring unit and is used as output signal U
Out, and with said input signal U
InTogether, with said output signal U
OutBe input to resonance shear WT-MSR; The shear loading of the said sample of said resonance shear measuring unit is measured with the variation of thickness; It is characterized in that, the die-away curve of the vibration of the single side surface of said sample is carried out Fourier transform, obtain resonance shear curve.
(3) in the resonance shear measuring method of above-mentioned (1) record, it is characterized in that said sample is a film.
(4) in the resonance shear measuring method of above-mentioned (1) record, it is characterized in that said sample is a liquid.
(5) in the resonance shear measuring method of above-mentioned (1) record, it is characterized in that said sample is a liquid crystal.
(6) in the resonance shear measuring method of above-mentioned (1) record, it is characterized in that said sample is the thickness of nano-scale.
(7) in the resonance shear measuring method of above-mentioned (1) or (2) record, it is characterized in that, the surface of said sample is modified through absorption or chemical modification method.
(8) in the resonance shear measuring method of above-mentioned (1) or (2) record, it is characterized in that said resonance shear curve is the frequency characteristic of the shear loading of said sample.
(9) a kind of resonance shear measuring device is characterized in that, this resonance shear measuring device has: waveform generator; Power supply is connected with this waveform generator; Resonance shear measuring unit is connected with this power supply and is transfused to input signal U
InDisplacement meter is connected with this resonance shear measuring unit; Resonance shear measuring device is connected with this displacement meter and said power supply and is transfused to output signal U
OutAnd input signal U
In, this resonance shear measuring device has timing portion, the Fourier transform unit that is connected with said displacement meter with this timing portion, spectral amplitude generation portion, the amplitude (U that is connected with this Fourier transform unit
Out/ U
In) standard portion and resonance shear curve process portion; And computing machine, be connected with resonance shear measuring device with said waveform generator.
(10) a kind of two-way type shear stress assay method; It is characterized in that; In this two-way type shear stress assay method, laser light is shone the lower surface that is installed in sample and keep the catoptron of the bottom surface of body; Combination is left assay method and is come determination method that the viscoelasticity and the friction, lubrication characteristic of said sample are measured according to resonance curve the off normal two-way surface spacing of capable mensurations of shift-in of the surface spacing of said sample according to coming from the catoptrical phase change of said catoptron, and the shear stress of sample is measured.
(11) a kind of two-way type shear stress determinator is characterized in that, this two-way type shear stress determinator has: accurate shear device makes the upper face of sample keep body along the horizontal direction displacement; Displacement meter keeps the displacement to horizontal direction of body to detect to the upper face of said sample; The lower surface fixed cell of the said sample that is made up of leaf spring keeps the lower surface of said sample to keep body and has the catoptron that keeps the bottom surface configuration of body in said lower surface at front end; Drive unit drives this lower surface fixed cell and comes to keep body along driving up and down to the lower surface of said sample; Leave determination unit with the two-way surface spacing; To said catoptron irradiating laser light; According to the distance between the lower surface of the upper face of said sample and said sample being measured from the catoptrical phase change of said catoptron; Wherein, the viscoelasticity and the friction, lubrication characteristic of the said sample of each distance between the lower surface of the upper face of said sample and said sample are measured.
(12) in the two-way type shear stress determinator of above-mentioned (11) record, it is characterized in that, come the viscoelasticity and the friction, lubrication characteristic of said sample are measured according to the resonance curve of said sample.
(13) in the two-way type shear stress determinator of above-mentioned (11) or (12) record, it is characterized in that said sample is transparent sample or opaque sample.
(14) in the two-way type shear stress determinator of above-mentioned (11) or (12) record, it is characterized in that said sample is a fluid film.
(15) in the two-way type shear stress determinator of above-mentioned (11) or (12) record, it is characterized in that said sample is a liquid crystal film.
(16) in the two-way type shear stress determinator of above-mentioned (11) or (12) record, it is characterized in that said sample is adsorbed layer, chemical modification films such as high molecular surfactant.
In the two-way type shear stress determinator of above-mentioned (11) or (12) record, it is characterized in that (17) it is opaque substrate that the upper face of said sample keeps body and lower surface to keep a side or two sides in the body.
Description of drawings
Fig. 1 is the synoptic diagram of the resonance shear measuring system of expression embodiments of the invention.
Fig. 2 is the synoptic diagram of an example of the resonance shear measuring unit that resonance shear measuring system is shown of expression embodiments of the invention.
Fig. 3 is the part-structure synoptic diagram of resonance shear measuring unit of the resonance shear measuring system of expression variation of the present invention.
Fig. 4 is the head shear measuring process flow diagram that shakes of expression embodiments of the invention.
Fig. 5 is illustrated in and on the resonance shear measuring of the present invention unit sample is set and the figure of the damped vibration example of the single side surface when measuring.
Fig. 6 illustrates the figure that carries out the curve separately that resonance shear curve that Fourier transform of the present invention obtains and the method through in the past obtain to damped vibration shown in Figure 5.
Fig. 7 is the synoptic diagram of the two-way type shear stress determinator of expression another embodiment of the present invention.
Fig. 8 is the synoptic diagram of the sample that uses for the example application that two-way type shear stress determinator is shown of expression another embodiment of the present invention.
Fig. 9 is the liquid crystal as sample (4-cyano-4-hexyl biphenyl, chemical formula 6CB) that sandwiches in the mica surface of another embodiment of the present invention.
Figure 10 is that illustrating of expression another embodiment of the present invention uses two-way type shear stress determinator of the present invention to come liquid crystal (4-cyano-4-hexyl biphenyl, the result's who 6CB) measures figure as sample.
Embodiment
In the 1st resonance shear measuring method of the present invention and device thereof, with input signal U
InBe input to piezoelectricity (piezo) element of resonance shear measuring unit, use displacement meter that the vibration of the single side surface of the sample that sandwiches in the solid surface in this resonance shear measuring unit is detected and be used as output signal U
Out, with said input signal U
InTogether, with said output signal U
OutBe input to resonance shear WT-MSR; The shear loading of the sample that sandwiches in the solid surface with said resonance shear measuring unit measures with the variation of thickness; Wherein, the die-away curve of the vibration of the single side surface of said sample is carried out Fourier transform, obtain resonance shear curve.
The 2nd two-way type shear stress determinator of the present invention has: accurate shear device, and the upper face that makes sample is along the horizontal direction displacement; Displacement meter detects the displacement to horizontal direction of the upper face of this sample; The lower surface fixed cell of the said sample that is made up of leaf spring keeps the lower surface of said sample and has the catoptron in its bottom surface configuration at front end; Drive unit drives this lower surface fixed cell and comes lower surface to said Sample A along driving up and down; And the two-way surface spacing is from determination unit; According to the distance between the lower surface of the upper face of said Sample A and said sample being measured, the viscoelasticity and the friction, lubrication characteristic of the said sample of the distance between the lower surface of the upper face of each said sample and said sample are measured from the catoptrical phase change of said catoptron.
Examples of implementation
Below, embodiment of the present invention is elaborated.
Fig. 1 is the synoptic diagram of the resonance shear measuring system of expression embodiments of the invention, and Fig. 2 is the synoptic diagram that an example of this resonance shear measuring unit is shown.In the figure, 1 is waveform generator, and 2 is the power supply that is connected with waveform generator 1, and 3 is to be connected with power supply 2 and to import the input voltage U as input signal
InResonance shear measuring unit, 4 is displacement meter, the for example electrostatic capacitance displacement meter that is connected with resonance shear measuring unit 3,5 be to be connected with electrostatic capacitance displacement meter 4 and power supply 2 and to import the output voltage U that signal is exported in conduct
OutAnd input voltage U
InResonance shear WT-MSR, this resonance shear WT-MSR 5 is by the 5A of timing portion, Fourier transform unit 5B, the spectral amplitude generation 5C of portion, amplitude (U
Out/ U
In) standard portion [with U
In(ω) and U
OutStandardization Sector] 5D and resonance shear curve process the 5E of portion and constitute.6 is the personal computer (PC) 6 that is connected with resonance shear WT-MSR 5, and this personal computer (PC) 6 is connected with waveform generator 1.In addition, as above-mentioned displacement meter, can also use strainmeter.
In Fig. 2,10 are resonance shear measuring unit (corresponding with resonance shear measuring unit 3 in Fig. 1), and 11 is cantilever; 12 are dish bearing (disc holder); 13 is white light, and 14 for being fixed on the lower basal plate of dish on the bearing 12, and 15 for as upper face is cut apart piezoelectric element along 4 of horizontal drive portion that horizontal direction drives; 16 for be fixed on this 4 cut apart the bottom of piezoelectric element 15 upper substrate, 17 for support 4 cut apart piezoelectric element 15 leaf spring.18 electrostatic capacitance displacement meters (probe) (corresponding) with the electrostatic capacitance displacement meter 4 among Fig. 1 for the horizontal direction displacement x of leaf spring 17 is measured, 19 samples (solid, liquid, liquid crystal etc.) for the determination object that becomes shear loading.In addition, here, liquid is not limited to single component, can also be molecular group or the various solution of colloidal dispersion that comprise more than 2 kinds.In addition, the horizontal drive portion as above-mentioned can also use motor.
Fig. 3 is the part-structure synoptic diagram of resonance shear measuring unit of the resonance shear measuring system of expression variation of the present invention.
In this example, can also substrate itself be made as sample 21,22, between substrate, sandwich sample unlike that kind shown in Figure 2, just can measure mutual friction (lubricating) characteristic of sample (substrate) 21 and sample (substrate) 22.
Fig. 4 is this resonance shear measuring process flow diagram.
(1) at first, to piezoelectric element (4 of Fig. 2 is cut apart piezoelectric element 15) input amplitude voltage U shown in Figure 1
InSine wave (angular frequency) (step S1).
(2) obtain output voltage U
Out(ω) (step S2).
(3) make input voltage U
InStop (step S3).
(4) obtain output voltage U
OutAnd the elapsed time (step S4).
(5) carry out Fourier transform (step S5).
(6) output amplitude spectrum (step S6).
(7) with output voltage U
Out(ω) and input voltage U
InCarry out standardization (step S7).
(8) output resonance shear curve (step S8).
When on above-mentioned resonance shear measuring unit, sample being set and measuring, the such curve of Fig. 5 is depicted in the damped vibration of the single side surface of sample.
Here, transverse axis is represented the elapsed time, and the longitudinal axis is represented the amplitude that vibrates.In this damped vibration, carry out through the represented Fourier transform of following formula,
Obtain this spectral amplitude, thereby obtain resonance shear curve.Here, ω representes the angular oscillation number, the fourier spectra that F (ω) expression is obtained, and f (t) representes damped vibration, t express time.
Below, the result that the result that measures to resonance shear curve negotiating resonance shear measuring method of the present invention and the method through in the past obtain is shown.
Fig. 6 illustrates the figure that carries out the curve separately that resonance shear curve that Fourier transform of the present invention obtains and the method through in the past obtain to damped vibration shown in Figure 5.
Transverse axis is represented the vibration number of the single side surface of sample, and the longitudinal axis is represented vibration amplitude, through the input voltage (U additional to the piezoelectricity device of shear measuring unit
IN) and use the fixed output voltage (U of electrostatic capacitance instrumentation
OUT) recently the expression.Method in the past is that a point of some ground carries out method for measuring to the response of the single side surface corresponding with each vibration frequency.Fig. 6 illustrates the present invention and can measure the response of the single side surface corresponding with frequency more well, and can carry out method for measuring to the response of the single side surface of the sample corresponding with the vibration frequency of wide region continuously with the short time.
In addition,, can sample (solid, liquid, liquid crystal etc.) be sandwiched between 2 solid substrates according to the present invention, Yi Bian change its thickness, Yi Bian bond strength of viscoelasticity variation, friction, lubrication characteristic, sample and the solid substrate of sample etc. is estimated.In addition, can also substrate itself be made as sample, not sandwich sample betwixt, and can measure mutual friction (lubricating) characteristic.In addition, can also wait this surface is modified through absorption or chemical modification method [LB (LangmuirBrochette) modification method].In addition, single side surface is vibrated along horizontal direction, can also be made the surface come the frequency response of sample is measured along vertical vibration.
According to the present invention, need not according to 11 some ground the shear loading under each vibration frequency to be measured as technology is such in the past, just can be easy and exactly the shear curve that resonates is measured with the short time.
Next, the two-way type shear stress mensuration to another embodiment of the present invention describes.
Fig. 7 is the synoptic diagram of the two-way type shear stress determinator of expression embodiments of the invention.
In the figure; 31 are resonance shear measuring unit; 32 for 4 cutting apart piezoelectric element to upper face along what horizontal direction drove; 33 for support 4 cut apart piezoelectric element 32 leaf spring, 34 electrostatic capacitance displacement meters (probe) that measure for horizontal direction displacement x to leaf spring 33,35 for be fixed on 4 cut apart the bottom of piezoelectric element 32 upper substrate.
In addition, the lower surface of fixing sample A keeps the unit 40 of body 42 to keep the lower surface of Sample A to keep body 42 at the front end of leaf spring 41, below this lower surface keeps body 42, disposes catoptron 43.On the other hand, the base portion at leaf spring 41 has this leaf spring 41 along the drive unit that drives up and down [for example, motor (not shown)].
In addition, 51 for the two-way surface spacing leaves determinator, has: LASER Light Source 52; Diffraction grating 53 is accepted the laser light from this LASER Light Source 52, and separates into metering light and reference light; Piezoelectric element 54 is adjusted this diffraction grating 53; Lens 55 are accepted the light from diffraction grating 53; Stationary mirror 56 is accepted the reference light as the part of this laser light; Diffraction grating 57 is accepted by the reference light of these stationary mirror 56 reflections and by the metering light of design in catoptron 43 reflections of the bottom surface of the lower surface maintenance body 52 of Sample A via lens 55 once more; Photodiode 58 is accepted the light from this diffraction grating 57; And personal computer 59, be connected with photodiode 58 with piezoelectric element 54.
Owing to constitute like this; Use the two-way surface spacing variation of the distance between the surface that sandwiches Sample A to be measured from determinator 51; The upper face of Sample A is installed on the accurate shear resonance determination unit 31; Viscoelasticity and friction, lubrication characteristic to sample are measured, and thus, can critically carry out shear stress and measure.
Fig. 8 is the synoptic diagram of the sample that uses for the example application that two-way type shear stress determinator of the present invention is shown; Fig. 9 is liquid crystal (the 4-cyano-4-hexyl biphenyl as this sample; Chemical formula 6CB); Figure 10 illustrates to use two-way type shear stress determinator of the present invention to come liquid crystal (4-cyano-4-hexyl biphenyl, the figure of the resonance curve of 6CB) measuring as this sample.
As shown in Figure 8, at liquid crystal (4-cyano-4-hexyl biphenyl, 6CB) 61 the mica of configuration up and down 62,63 as sample.That is, be configured between the mica 63 that keeps body 42 as the mica 62 of upper substrate 35 with as lower surface, sandwich liquid crystal 61 as sample.
(4-cyano-4-hexyl biphenyl, chemical formula 6CB) is as shown in Figure 9 for the liquid crystal as sample that sandwiches in this mica surface.
In Figure 10, transverse axis is represented the angular oscillation number (s on the surface on sample top
-1), the longitudinal axis is represented the input voltage (U to the piezoelectric element of precision shear resonance determination unit
In) and the output voltage (U that measures by electrostatic capacitance displacement meter
Out) the ratio.Except to measuring as the liquid crystal of sample the result who draws, for to comparing and describe with the result's [in air (mica-mica contact)] who the surface that keeps body is contacted measure with result's [in air (separation side)] of not sandwiching the state estimating that leaves the surface that keeps body as the liquid crystal of sample.The horizontal solid line that the surface spacing of sample leaves is represented the resonance peak under this distance., leave here,, surface spacing is defined as 0nm from the point that does not have to change when using drive unit to come to keep body when the top drives to lower surface for surface spacing.Change along with surface spacing leaves, observe the variation of resonance curve.The phenomenon presentation surface constant distance and the situation that load changes that have the peak value of a plurality of 0nm.
In addition,, can sample (liquid, solid, liquid crystal etc.) be sandwiched between 2 solid substrates according to the present invention, Yi Bian its thickness is changed, Yi Bian the bond strength of viscoelasticity variation, friction, lubrication characteristic, sample and the solid substrate of sample etc. is estimated.In addition, can also substrate itself be made as sample, between substrate, not sandwich sample, and mutual friction (lubricating) characteristic is measured.In addition, can also wait this surface is modified through absorption or chemical modification method [LB (LangmuirBrochette method)].
In addition; Since use the reflected light of laser, thus need not to make light transmission substrate and sample, even under the situation of using opaque substrate and opaque sample; Also can under each distance, the viscoelasticity and the friction, lubrication characteristic of sample be measured to surface spacing from measuring.
In addition, the invention is not restricted to the foregoing description, can carry out various distortion, these are not discharged from scope of the present invention according to aim of the present invention.
Utilizability on the industry
The 1st resonance shear measuring method of the present invention is specially adapted to the metering simply and accurately of rerum natura of the fluid film of the thickness with nano-scale between solid surface.
The 2nd two-way type shear stress determinator of the present invention is capable of using for using the double circuit method that is used for that the distance between opaque substrate is measured to carry out the two-way type shear stress determinator that accurate shear stress is measured; With the 1st resonance shear measuring method likewise, be applicable to the metering simply and accurately of rerum natura of the fluid film of the thickness between solid surface with nano-scale.
Claims (9)
- One kind resonance shear measuring method, this resonance shear measuring method in, with input signal U InBe input to the horizontal drive portion of resonance shear measuring unit, to the sample that is sandwiched in the solid surface in this resonance shear measuring unit, the use displacement meter detects the vibration of its single side surface and is used as output signal U Out, and with said input signal U InTogether, with said output signal U OutBe input to resonance shear WT-MSR; The shear loading of the sample that is sandwiched in the solid surface with said resonance shear measuring unit measures with the variation of thickness; It is characterized in that; Die-away curve to the vibration of the single side surface of said sample carries out Fourier transform, obtains resonance shear curve.
- One kind resonance shear measuring method, this resonance shear measuring method in, with input signal U InBe input to the horizontal drive portion of resonance shear measuring unit, between solid surface, do not sandwich sample and with solid surface itself as sample, the use displacement meter detects the vibration of the single side surface of the sample in this resonance shear measuring unit and is used as output signal U Out, and with said input signal U InTogether, with said output signal U OutBe input to resonance shear WT-MSR; The shear loading of the said sample of said resonance shear measuring unit is measured with the variation of thickness; It is characterized in that, the die-away curve of the vibration of the single side surface of said sample is carried out Fourier transform, obtain resonance shear curve.
- 3. resonance shear measuring method according to claim 1 is characterized in that, said sample is a film.
- 4. resonance shear measuring method according to claim 1 is characterized in that, said sample is a liquid.
- 5. resonance shear measuring method according to claim 1 is characterized in that, said sample is a liquid crystal.
- 6. resonance shear measuring method according to claim 1 is characterized in that, said sample is the thickness of nano-scale.
- 7. resonance shear measuring method according to claim 1 and 2 is characterized in that, through absorption or chemical modification method the surface of said sample is modified.
- 8. resonance shear measuring method according to claim 1 and 2 is characterized in that, said resonance shear curve is the frequency characteristic of the shear loading of said sample.
- 9. a resonance shear measuring device is characterized in that this resonance shear measuring device has: waveform generator; Power supply is connected with this waveform generator; Resonance shear measuring unit is connected with this power supply and is transfused to input signal U InDisplacement meter is connected with this resonance shear measuring unit; Resonance shear WT-MSR is connected with this displacement meter and said power supply and is transfused to output signal U OutAnd input signal U In, this resonance shear WT-MSR has(a) timing portion,The Fourier transform unit that (b) is connected with said displacement meter with this timing portion,The spectral amplitude generation portion that (c) is connected with this Fourier transform unit,(d) amplitude U Out/ U InStandard portion and(e) resonance shear curve is processed portion;And computing machine, be connected with resonance shear WT-MSR with said waveform generator.
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JP5263784B2 (en) * | 2009-06-29 | 2013-08-14 | 独立行政法人産業技術総合研究所 | Viscosity measurement device for thin film liquid |
CN102221499B (en) * | 2011-03-29 | 2012-10-03 | 天津大学 | Alignment loading device used for stretching test of nanoscale, micron-size thin film materials |
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CN101278184A (en) | 2008-10-01 |
JP4615568B2 (en) | 2011-01-19 |
CN102374967A (en) | 2012-03-14 |
US7845231B2 (en) | 2010-12-07 |
EP1942331A1 (en) | 2008-07-09 |
US20090145231A1 (en) | 2009-06-11 |
CN102374967B (en) | 2014-11-05 |
JPWO2007037241A1 (en) | 2009-04-09 |
WO2007037241A1 (en) | 2007-04-05 |
EP1942331A4 (en) | 2015-09-02 |
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