CN101276861B - Led - Google Patents
Led Download PDFInfo
- Publication number
- CN101276861B CN101276861B CN2007100880938A CN200710088093A CN101276861B CN 101276861 B CN101276861 B CN 101276861B CN 2007100880938 A CN2007100880938 A CN 2007100880938A CN 200710088093 A CN200710088093 A CN 200710088093A CN 101276861 B CN101276861 B CN 101276861B
- Authority
- CN
- China
- Prior art keywords
- light
- emitting diode
- semiconductor layer
- electrical contacts
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention relates to a LED, specifically a LED with long light emitting life, a good light emitting efficiency and stable brightness, comprising: a substrate; a thermal conductive layer arranged on surface of the substrate; a first semiconductor layer arranged on part surface of the thermal conductive layer; an active layer arranged on surface of the first semiconductor layer; a second semiconductor layer arranged on surface of the active layer; a radiation film layer arranged on the surface of the part of the first semiconductor layer which is not covered by and is arranged on the thermal conductive layer; an insulative layer on surface of that part of the thermal conductive layer which is not covered by the first semiconductor layer and the radiation film layer; a first electric contact part connected to the substrate electrically; and a second electric contact part connected to the second semiconductor layer electrically.
Description
Technical field
The invention relates to a kind of light-emitting diode, refer to a kind of light-emitting diode especially with long luminescent lifetime, preferable luminous efficiency and more stable luminosity.
Background technology
Light-emitting diode (LED) has been applied in the every field, as backlight module, lighting and display lamp number etc. at present widely.But the heat energy that is produced during owing to lumination of light emitting diode often can't remove smoothly, and its temperature just raises gradually along with the increase of service time, causes its luminous efficacy and luminosity little by little to degenerate.For this reason, industry does one's utmost to develop the various modes that remove heat energy invariably, as various active heat abstractors and passive heat radiation device, hope can be derived the heat energy that accumulates on light-emitting diode inside effectively, to prolong its luminescent lifetime, increase its luminous efficiency and to promote the stability of its luminosity.
As shown in Figure 1, known light-emitting diode 1 comprises: a substrate 11; One is arranged at first semiconductor layer 12 on the surface of substrate 11; One is arranged at the active layer 13 on the surface of first semiconductor layer 12; One is arranged at second semiconductor layer 14 on the surface of active layer 13, and second semiconductor layer 14 and first semiconductor layer 12 are folded in active layer 13 between the two; One is electrically connected on first electrical contacts 15 of substrate 11; And second electrical contacts 16 that is electrically connected on second semiconductor layer 14.
Again as shown in Figure 1, known light-emitting diode 1 also is provided with an external circuit 17, it is to be electrically connected on first electrical contacts 15 and second electrical contacts 16, so that a drive current that comes from the outside is inputed to known light-emitting diode 1 via first electrical contacts 15 and second electrical contacts 16, required for 1 running of known light-emitting diode.
But as previously mentioned, when 1 running of known light-emitting diode, its active layer 13 produces light and produces considerable heat energy simultaneously, and these heat energy cause the temperature of known light-emitting diode 1 to raise gradually because of discharging the inside that builds up in known light-emitting diode 1 smoothly.By the time after heat energy was accumulated to a certain degree, the ray structure of known light-emitting diode 1 was just little by little destroyed, caused the luminosity of known light-emitting diode 1 little by little to reduce, and finally can't send any light again.
Therefore, industry need a kind of can be after long-time running, its temperature still can remain in the light-emitting diode in the normal scope, so that this light-emitting diode has long luminescent lifetime, preferable luminous efficiency reaches more stable luminosity.
Summary of the invention
Main purpose of the present invention is that a kind of light-emitting diode is being provided, and makes it can prolong the luminescent lifetime of light-emitting diode.
Another object of the present invention is that a kind of light-emitting diode is being provided, and makes the stability of its luminous efficiency that can promote light-emitting diode and lifting luminosity.
For reaching above-mentioned purpose, light-emitting diode of the present invention is to comprise: a substrate; One heat-conducting layer is to be arranged at the surface of this substrate and to have an opening; One first semiconductor layer is the part surface that is arranged at this heat-conducting layer, and this first semiconductor layer and thus an opening and therewith substrate connect; One active layer is the surface that is arranged at this first semiconductor layer; One second semiconductor layer is the surface that is arranged at this active layer, and this second semiconductor layer therewith first semiconductor layer this active layer is folded between the two; One heat radiation rete is the surface that is arranged at the part that is not covered by this first semiconductor layer of this heat-conducting layer; One insulating barrier, be formed at heat-conducting layer not by dispel the heat the therewith surface of the part that rete covers of this first semiconductor layer; One first electrical contacts is to be electrically connected on this substrate; And one second electrical contacts, be to be electrically connected on this second semiconductor layer.
For reaching above-mentioned purpose, light-emitting diode of the present invention is to comprise: a substrate; One first semiconductor layer is the surface that is arranged at this substrate; One heat-conducting layer is to be arranged at the surface of this first semiconductor layer and to have an opening; One active layer is the part surface that is arranged at this heat-conducting layer, this active layer and thus opening and therewith first semiconductor layer connect; One second semiconductor layer is the surface that is arranged at this active layer, and this second semiconductor layer therewith first semiconductor layer this active layer is folded between the two; One heat radiation rete is the surface that is arranged at the part that is not covered by this active layer of this heat-conducting layer; One insulating barrier, be formed at heat-conducting layer not by dispel the heat the therewith surface of the part that rete covers of this active layer; One first electrical contacts is to be electrically connected on this first semiconductor layer; And one second electrical contacts, be to be electrically connected on this second semiconductor layer.
Therefore, when light-emitting diode of the present invention operates, light-emitting diode of the present invention can be guided and conduct to the external world with its heat-conducting layer of heat energy utilization that its active layer produced from its " inside ", be so-called " thermocurrent " by its heat radiation rete with this thermal power transfer again.At last, this " thermocurrent " is just by being conducted to its first electrical contacts with the electron collection loop that the heat radiation rete of light-emitting diode of the present invention is electrically connected with first electrical contacts respectively.The energy recovery that is produced when so, light-emitting diode of the present invention can operate it is utilized and is applied to drive lumination of light emitting diode of the present invention once more.So, even after long-term operation, the temperature of light-emitting diode of the present invention still can remain in, and superheating phenomenon can not take place in the normal scope, its ray structure just can be not destroyed because of the generation of superheating phenomenon, make its luminescent lifetime further to prolong, its luminous efficiency also can further promote, and its luminosity is also better stable.In addition, because light-emitting diode of the present invention can be made by the employed various process work bench of present industry, so the processing procedure of light-emitting diode of the present invention and the processing procedure of existing light-emitting diode have great compatibility, and can be widely used in the various inorganic or organic light-emitting diodes.
Light-emitting diode of the present invention can have the electron collection loop of any kind of, and it is preferably a copper conductor.Light-emitting diode of the present invention can have the substrate of any material, and its material is preferably aluminium oxide, monocrystalline silicon, polysilicon, amorphous silicon, GaAs, indium phosphide, InGaP or copper indium diselenide.Light-emitting diode of the present invention can have the heat-conducting layer of any material, and it is preferably diamond film and the metal film rete, Zinc oxide film and the metal film that the form rete that the rete that forms or gallium nitride film and metal film be superimposed with each other and form that is superimposed with each other that is superimposed with each other.The heat-conducting layer of light-emitting diode of the present invention can have the structure of any kind of, and it is preferable to have a metallic mirror structure.Light-emitting diode of the present invention can have first semiconductor layer of any material, and its material is preferably n type gallium nitride, n type inp, N p type gallium arensidep aluminium, N p type gallium arensidep, n type inp gallium or N type AlGaInP.First semiconductor layer of light-emitting diode of the present invention can have the structure of any kind of, and it is preferable to have a metallic mirror structure.Light-emitting diode of the present invention can have the active layer of any material, and it is preferably I type AlGaInP.Light-emitting diode of the present invention can have second semiconductor layer of any material, and its material is preferably P type gallium nitride, p type inp, P p type gallium arensidep aluminium, P p type gallium arensidep or p type inp gallium.Light-emitting diode of the present invention can have the heat radiation rete of any kind of, and it is preferably an electron resonance and wears formula thermal electric film or semiconductor formula thermal electric film then.Light-emitting diode of the present invention can have first electrical contacts of any kind of, and it is preferably the membrane electrode of golden nickel alloy.Light-emitting diode of the present invention can have second electrical contacts of any kind of, and it is preferably the indium tin oxide films electrode.Light-emitting diode of the present invention can have the insulating barrier of any material, and its material is preferably silica, aluminium oxide or silicon nitride.Light-emitting diode of the present invention can have the external circuit of any kind of, and it is preferably a copper conductor.
Light-emitting diode of the present invention can have the electron collection loop of any kind of, and it is preferably a copper conductor.Light-emitting diode of the present invention can have the substrate of any material, and its material is preferably aluminium oxide, monocrystalline silicon, polysilicon, amorphous silicon, GaAs, indium phosphide, InGaP or copper indium diselenide.Light-emitting diode of the present invention can have the heat-conducting layer of any material, and it is preferably diamond film and the metal film rete, Zinc oxide film and the metal film that the form rete that the rete that forms or gallium nitride film and metal film be superimposed with each other and form that is superimposed with each other that is superimposed with each other.Light-emitting diode of the present invention can have first semiconductor layer of any material, and its material is preferably n type gallium nitride, n type inp, N p type gallium arensidep aluminium, N p type gallium arensidep or n type inp gallium.The active layer of light-emitting diode of the present invention can have the structure of any kind of, and it is preferable to be formed by most indium gallium nitride retes and most gallium nitride rete interleaving stacks.Second semiconductor layer of light-emitting diode of the present invention can have the structure of any kind of, and it is preferable to have a metallic mirror structure.Light-emitting diode of the present invention can have second semiconductor layer of any material, and its material is preferably P type gallium nitride, p type inp, P p type gallium arensidep aluminium, P p type gallium arensidep or p type inp gallium.Light-emitting diode of the present invention can have the heat radiation rete of any kind of, and it is preferably an electron resonance and wears formula thermal electric film or semiconductor formula thermal electric film then.Light-emitting diode of the present invention can have first electrical contacts of any kind of, and it is preferably the membrane electrode of thallium aluminium alloy.Light-emitting diode of the present invention can have second electrical contacts of any kind of, and it is preferably the indium tin oxide films electrode.Light-emitting diode of the present invention can have the insulating barrier of any material, and its material is preferably silica, aluminium oxide or silicon nitride.Light-emitting diode of the present invention can have the external circuit of any kind of, and it is preferably a copper conductor.Light-emitting diode of the present invention can have the electron collection loop of any kind of, and it is preferably a copper conductor.
Description of drawings
For the effect that makes the convenient simple and direct understanding further feature content of the present invention of auditor and advantage and reached can more manifest, below in conjunction with embodiment and accompanying drawing describe in detail as after, wherein:
Fig. 1 is the schematic diagram of known light-emitting diode.
Fig. 2 A is the generalized section of the light-emitting diode of first embodiment of the invention.
Fig. 2 B is the schematic perspective view of the light-emitting diode of first embodiment of the invention.
Fig. 3 is that an electron resonance is worn the schematic diagram of formula thermal electric film then.
Fig. 4 is the schematic diagram of semiconductor formula thermal electric film.
Fig. 5 A shows that the temperature of light-emitting diode of first embodiment of the invention is along with the schematic diagram of the variation of its fluorescent lifetime.
Fig. 5 B shows that the brightness of light-emitting diode of first embodiment of the invention is along with the schematic diagram of the variation of its fluorescent lifetime.
Fig. 6 is the generalized section of the light-emitting diode of second embodiment of the invention.
Fig. 7 is the generalized section of the light-emitting diode of third embodiment of the invention.
Fig. 8 is the generalized section of the light-emitting diode of fourth embodiment of the invention.
Embodiment
Shown in Fig. 2 A and Fig. 2 B, wherein Fig. 2 A is the generalized section of the light-emitting diode of first embodiment of the invention, and Fig. 2 B is the schematic perspective view of same light-emitting diode.The light-emitting diode 2 of first embodiment of the invention comprises: a substrate 21; One is arranged at the heat-conducting layer 22 on the surface of substrate 21, and it also has an opening 221; One is arranged at first semiconductor layer 23 of the part surface of heat-conducting layer 22, and first semiconductor layer 23 is connected with substrate 21 by opening 221; One is arranged at the active layer 24 on the surface of first semiconductor layer 23; One is arranged at second semiconductor layer 25 on the surface of active layer 24, and second semiconductor layer 25 and first semiconductor layer 23 are folded in active layer 24 between the two; One is arranged at the heat radiation rete 26 of the part surface that is not covered by first semiconductor layer 23 of heat-conducting layer 22; One is formed at the insulating barrier 27 of the part surface that is not covered by first semiconductor layer 23 and heat radiation rete 26 of heat-conducting layer 22; One is electrically connected on first electrical contacts 281 of substrate 21; And second electrical contacts 282 that is electrically connected on second semiconductor layer 25.
In addition, in the present embodiment, the material of substrate 21 is N p type gallium arensidep (N-type GaAs), and substrate 21 also is provided with a n type gallium nitride epitaxial layer (not shown) in the surface of substrate 21, makes this n type gallium nitride epitaxial layer (not shown) between substrate 21 and heat-conducting layer 22.Heat-conducting layer 22 is golden beryllium alloy (Au/Be), and it also can be mirror layer, and the shape of opening 221 can be rectangle, square or other any suitable shape according to actual needs.On the other hand, the material of first semiconductor layer 23 is N type AlGaInP (N-type AlGaInP).The material of second semiconductor layer 25 is P p type gallium arensidep (P-type GaAs), and the material that is folded in the active layer 24 between first semiconductor layer 23 and second semiconductor layer 25 is I type AlGaInP (I-type AlGaInP), and active layer 24 has most quantum well (quantum well) structures.
As for the heat radiation rete 26 of the part surface that is not covered by first semiconductor layer 23 that is arranged at heat-conducting layer 22, it is one " electron resonance is worn formula thermal electric film then ", and heat radiation rete 26 has a vacuum chamber (not shown).But in different application, heat radiation rete 26 also can be one " semiconductor-type thermal electric film ", is not limited in one " electron resonance is worn formula thermal electric film then ".And " electron resonance wear then formula thermal electric film " reaches the structure of " semiconductor-type thermal electric film ", after will cooperating Fig. 3 and Fig. 4 to state to be set forth in.At last, in this light-emitting diode 2, what be formed at heat-conducting layer 22 is not silica by the material of the insulating barrier 27 of the part surface of first semiconductor layer 23 and 26 coverings of heat radiation rete, and first electrical contacts 281 is the membrane electrode of golden nickel alloy, and second electrical contacts 282 is the indium tin oxide films electrode.
For another example shown in Fig. 2 A and Fig. 2 B, the light-emitting diode 2 of first embodiment of the invention also is provided with an electron collection loop 291, it is to be electrically connected on the heat radiation rete 26 and first electrical contacts 281 and is a copper conductor that the electric current (thermocurrent) that obtains from thermal power transfer with the rete 26 that will dispel the heat is passed to first electrical contacts 281.Be noted that, though in the present embodiment, electron collection loop 291 is to be electrically connected on first electrical contacts 281, but in different application, electron collection loop 291 also can be electrically connected on second electrical contacts 282, current delivery to the second electrical contacts 282 that obtains from thermal power transfer with the rete 26 that will dispel the heat.On the other hand, the light-emitting diode 2 of first embodiment of the invention also is provided with an external circuit 292, it is to be electrically connected on first electrical contacts 281 and second electrical contacts 282 and is a copper conductor, so that a drive current that comes from the outside is inputed to the light-emitting diode 2 of first embodiment of the invention via first electrical contacts 281 and second electrical contacts 282, required for light-emitting diode 2 runnings of first embodiment of the invention.
When the light-emitting diode 2 of first embodiment of the invention operated, its active layer 24 produced light and produces considerable heat energy simultaneously.At this moment, just heat-conducting layer 22 comes out " inside " guiding of light-emitting diode 2 from then on of this heat energy and conduct to the external world, as conduct to heat radiation rete 26.And in the present embodiment, heat radiation rete 26 is one " electron resonance is worn formula thermal electric film then ", and its to have a vacuum chamber (not shown) and utilize quantum-mechanical " electronics is worn effect then " be electric current with thermal power transfer, promptly produce so-called " thermocurrent ".Then, this " thermocurrent " is just by quilt is conducted to first electrical contacts 281 with the heat radiation electron collection loop 291 that is electrically connected with first electrical contacts 281 of rete 26 respectively.
Just recyclable utilization of heat energy that is produced when therefore, the light-emitting diode 2 of first embodiment of the invention operates and the light-emitting diode 2 that is applied to drive first embodiment of the invention once more.That is to say, in the light-emitting diode 2 of first embodiment of the invention, those originally can't utilize once more and " heat energy " that flies away in the space can be become the form of electric current by the conversion of heat radiation rete 26, and are applied to drive the light-emitting diode 2 of first embodiment of the invention once more.So, even after long-term operation, the temperature of the light-emitting diode 2 of first embodiment of the invention still can remain in the normal scope, and superheating phenomenon can not take place.That is to say, even after long-term operation, the ray structure of the light-emitting diode 2 of first embodiment of the invention can't be destroyed because of the generation of superheating phenomenon, makes its luminescent lifetime further to prolong, its luminous efficiency also can further promote, and its luminosity is also better stable.
Be noted that, the material of each assembly of the light-emitting diode 2 of formation first embodiment of the invention is all non-exceeds with aforesaid material, material as substrate 21 is not to exceed with aluminium oxide, and its material also can be silicon, silicon Germanium compound, gallium phosphide, carborundum, GaAs or indium phosphide etc.As for the applicable material of each assembly, shown in the following tabulation 1 of difference, but the applicable material of each assembly is not still exceeded with the content shown in the table 1.
Table 1
| Each assembly of light-emitting diode | Exercisable material |
| Substrate | Al2O3、Si、SiGe、GaP、SiC、GaAs、InP、 Cu |
| Heat-conducting layer | Sn、Diamond/Metal、ZnO/Metal、GaN/Metal |
| First semiconductor layer | N-type?InP、N-type?AlAs、N-type?AlGaAs、 N-type?GaAs、N-type?GaInP、N-type?GaN、N-type AlGaInP |
| Active layer | InGaN/GaN、InGaAsP、InP、InGaAs、AlInP、 SiGe、Si、GaInP、AlGaInP |
| Second semiconductor layer | P-type?InP、P-type?AlAs、P-type?AlGaAs、 P-type?GaAs、P-type?GaInP、P-type?GaN、P-type AlGaInP |
| Insulating barrier | SiOx、Al2O3、Si3N4 |
As previously mentioned, the heat radiation rete 26 of the light-emitting diode 2 of first embodiment of the invention is according to different application, can be " electron resonance is worn formula thermal electric film then " or " semiconductor-type thermal electric film ", these two kinds of applicable materials of thermal electric film are then as shown in table 2 below respectively:
Table 2
| The kind of thermal electric film | Exercisable material |
| Electron resonance is worn tunnel formula thermal electric film | Diamond?thin?film、ZnO、SiC、GaN、 SiO2/Si/SiO2super-lattice |
| The semiconductor-type thermal electric film | ZnSb、PbTe、Bi2Te3、(Bi.Sb)2Te3、 Bi2(Te.Se)3 |
Below, will cooperate Fig. 3 and Fig. 4, narrate the detailed structure of these two kinds of thermal electric films respectively, wherein, Fig. 3 is that an electron resonance is worn the schematic diagram of formula thermal electric film then, Fig. 4 then is the schematic diagram of semiconductor formula thermal electric film.
As shown in Figure 3, electron resonance is worn second rete 34 and most supporting layers 35 that first rete 33, that formula thermal electric film 3 then comprises that a first metal layer 31, one second metal level 32, are positioned at the upper surface of the first metal layer 31 is positioned at the lower surface of second metal level 32.Wherein, these supporting layers 35 are to be arranged between first rete 33 and second rete 34 respectively and to form a vacuum chamber 36 between first rete 33 and second rete 34.In addition, in the heat radiation rete 26 of the light-emitting diode 2 of first embodiment of the invention, the first metal layer 31 is aforesaid heat-conducting layer 22, so the first metal layer 31 is a rete that is superimposed with each other and is formed by diamond film and metal film.On the other hand, the material of second metal level 32 is a Sn-Al alloy, and first rete 33 and second rete 34 are diamond film (Diamond film), and the material of supporting layer 35 then is a silica.
Therefore, when light-emitting diode 2 running of first embodiment of the invention, just the inside of self-luminous diode 2 is exported to the first metal layer 31 to the heat energy that it produced by heat-conducting layer 22, and the temperature of the first metal layer 31 just thereby raise.At this moment, " hot electron " that the first metal layer 31 had just worn the mode of satisfying with resonance and broken away from from the first metal layer 31, enters in the vacuum chamber 36 by first rete 33.Then, these " hot electrons " enter in second metal level 32 by second rete 34 again, and produce aforesaid " thermocurrent ".So, this electron resonance wears then that formula thermal electric film 3 just can be converted to " heat energy " aforesaid " thermocurrent ".
As shown in Figure 4, semiconductor-type thermal electric film 4 comprises most the first metal layers 41 and most second metal levels 42, and these the first metal layers 41 and second metal level 42 are to be electrically connected mutually and alternately to arrange.Wherein, the first metal layer 41 and second metal level 42 are that the material by identical type constitutes, but the kind of the impurity that both mixed and inequality.For example, when being P type bismuth telluride (P-type Bi2Te3) as if the first metal layer 41, second metal level 42 just is a N type bismuth telluride (N-typeBi2Te3).In addition, semiconductor-type thermal electric film 4 is to be arranged between a thermal source (Heat source) 43 and one heat reservoir (Heat sink) 44, and the two ends of semiconductor-type thermal electric film 4 are electrically connected on a lead (not shown) respectively, derive with the electric current that semiconductor-type thermal electric film 4 is obtained by thermal power transfer.
Therefore, if when using semiconductor-type thermal electric film 4 as the heat radiation rete 26 of the light-emitting diode 2 of first embodiment of the invention, just the inside of self-luminous diode 2 is exported to the external world to the heat energy that the light-emitting diode 2 of first embodiment of the invention is produced when operating by heat-conducting layer 22, as thermal source 43.At this moment, the temperature of thermal source 43 just thereby raise makes to produce " electric current ", the i.e. back reaction of Pai Tiyehe effect (Peltier Effect) between the first metal layer 41 and second metal level 42.So, this semiconductor-type thermal electric film 4 just can be converted to " heat energy " aforesaid " thermocurrent ".
See also Fig. 5 A and Fig. 5 B, wherein Fig. 5 A shows the temperature of light-emitting diode of first embodiment of the invention along with the schematic diagram of the variation of its fluorescent lifetime, and Fig. 5 B then is the brightness of the light-emitting diode that the shows first embodiment of the invention schematic diagram along with the variation of its fluorescent lifetime.In addition, in Fig. 5 A and Fig. 5 B, curve A is the measurement (temperature and brightness) of the known light-emitting diode of representative, and curve B is then represented the measurement (temperature and brightness) of the light-emitting diode of first embodiment of the invention.
Shown in Fig. 5 A, after the lasting running of t1 after a while, the temperature of known light-emitting diode (curve A) still increases constantly, and its higher limit (upper limit) not.On the contrary, even after the lasting running through a long period t2, the temperature of the light-emitting diode of first embodiment of the invention (curve B) still maintains a relatively low numerical value, and its temperature little by little tends to a stable numerical value (higher limit).Therefore, compared to known light-emitting diode, the temperature of the light-emitting diode of first embodiment of the invention can be after long running, still remains on a relatively low numerical value and is in a stable status comparatively.So, the just sustainable normal running of the ray structure of the light-emitting diode of first embodiment of the invention and thereby prolong its luminescent lifetime.
On the other hand, shown in Fig. 5 B, after the lasting running of t3 after a while, the brightness of known light-emitting diode (curve A) can reduce after arriving a peak on the contrary constantly, and its lower limit (lower limit) not.The origin cause of formation of this phenomenon is that after the process lasting running of this section period, the ray structure of known light-emitting diode is just little by little destroyed because of the accumulation of heat energy, makes the brightness of known light-emitting diode little by little reduce.On the contrary, the light-emitting diode of first embodiment of the invention is after the process running of identical a period of time t3, the brightness of the light-emitting diode of first embodiment of the invention (curve B) still increases constantly, and after operation reached another long period t4, its brightness just tended to a stationary value.Therefore, compared to known light-emitting diode, the brightness of the light-emitting diode of first embodiment of the invention can be after operating for a long time, still remain on a higher numerical value and be in a stable status comparatively, make that the brightness of light-emitting diode of first embodiment of the invention is more stable, and its luminous efficiency is also better.
Fig. 6 is the generalized section of the light-emitting diode of second embodiment of the invention, and wherein the light-emitting diode 6 of second embodiment of the invention comprises: a substrate 61; One is arranged at the heat-conducting layer 62 on the surface of substrate 61, and it also has an opening (not shown); One is arranged at first semiconductor layer 63 of the part surface of heat-conducting layer 62, and first semiconductor layer 63 is connected with substrate 61 by the opening (not shown); One is arranged at the active layer 64 on the surface of first semiconductor layer 63; One is arranged at second semiconductor layer 65 on the surface of active layer 64, and second semiconductor layer 65 and first semiconductor layer 63 are folded in active layer 64 between the two; One is arranged at the heat radiation rete 66 of the part surface that is not covered by first semiconductor layer 63 of heat-conducting layer 62; One is formed at the insulating barrier 67 of the part surface that is not covered by first semiconductor layer 63 and heat radiation rete 66 of heat-conducting layer 62; One is electrically connected on first electrical contacts 681 of substrate 61; And second electrical contacts 682 that is electrically connected on second semiconductor layer 65.
In addition, the light-emitting diode 6 of second embodiment of the invention also is provided with an electron collection loop 691, it is to be electrically connected on the heat radiation rete 66 and first electrical contacts 681 and is a copper conductor that the electric current (thermocurrent) that obtains from thermal power transfer with the rete 66 that will dispel the heat is passed to first electrical contacts 681.Be noted that, though in the present embodiment, electron collection loop 691 is to be electrically connected on first electrical contacts 681, but in different application, electron collection loop 691 also can be electrically connected on second electrical contacts 682, current delivery to the second electrical contacts 682 that obtains from thermal power transfer with the rete 66 that will dispel the heat.On the other hand, the light-emitting diode 6 of second embodiment of the invention also is provided with an external circuit 692, it is to be electrically connected on first electrical contacts 681 and second electrical contacts 682 and is a copper conductor, so that a drive current that comes from the outside is inputed to the light-emitting diode 6 of second embodiment of the invention via first electrical contacts 681 and second electrical contacts 682, supply to such an extent that light-emitting diode 6 runnings of second embodiment of the invention are required.
In addition, the light-emitting diode 6 of second embodiment of the invention also is provided with a storage capacitors 693, it is to be electrically connected on electron collection loop 691, and storage capacitors 693 is applicable to that " thermocurrent " that obtain from thermal power transfer with heat radiation rete 66 is stored in wherein.
When the light-emitting diode 6 of second embodiment of the invention operated, its active layer 64 produced light and produces considerable heat energy simultaneously.At this moment, just heat-conducting layer 62 comes out " inside " guiding of light-emitting diode 6 from then on of this heat energy and conduct to the external world, as conduct to heat radiation rete 66.And in the present embodiment, heat radiation rete 66 is one " electron resonance is worn formula thermal electric film then ", and itself and to have a vacuum chamber (not shown) and utilize quantum-mechanical " electronics is worn effect then " be electric current with thermal power transfer, promptly produce so-called " thermocurrent ".Then, this " thermocurrent " is just by quilt is conducted to the storage capacitors 693 or first electrical contacts 681 with the heat radiation electron collection loop 691 that is electrically connected with first electrical contacts 681 of rete 66 respectively.
Therefore, the light-emitting diode 6 of second embodiment of the invention is except having the advantage identical with the light-emitting diode 2 of first embodiment of the invention, its storage capacitors 693 more makes the light-emitting diode 6 of second embodiment of the invention to utilize the electric current that is stored in the storage capacitors 693 to operate constantly under the situation that does not need extraneous drive current.That is to say that even under the unsettled situation of extraneous drive current, the light-emitting diode 6 of second embodiment of the invention still can continue and running stably.
As shown in Figure 7, wherein Fig. 7 is the generalized section of the light-emitting diode of third embodiment of the invention.The light-emitting diode 7 of third embodiment of the invention comprises: a substrate 71; One is arranged at first semiconductor layer 72 on the surface of substrate 71; One is arranged at the surface of first semiconductor layer 72 and has the heat-conducting layer 73 of an opening 731; One is arranged at the active layer 74 of the part surface of heat-conducting layer 73, and active layer 74 is connected with first semiconductor layer 72 by opening 731; One is arranged at second semiconductor layer 75 on the surface of active layer 74, and second semiconductor layer 75 and first semiconductor layer 72 are folded in active layer 74 between the two; One is arranged at the heat radiation rete 76 of the part surface that is not covered by active layer 74 of heat-conducting layer 73; One is formed at the insulating barrier 77 of the part surface that is not covered by active layer 74 and heat radiation rete 76 of heat-conducting layer 73; One is electrically connected on first electrical contacts 781 of first semiconductor layer 72; And second electrical contacts 782 that is electrically connected on second semiconductor layer 75.
In addition, in the present embodiment, the material of substrate 71 is an aluminium oxide, and the material of first semiconductor layer 72 is a n type gallium nitride.On the other hand, heat-conducting layer 73 is a rete that is superimposed with each other and is formed by diamond film and metal film, and the shape of opening 731 can be rectangle, square or other any suitable shape according to actual needs.The material of second semiconductor layer 75 is a P type gallium nitride, and second semiconductor layer 75 has a metallic mirror structure in wherein.On the other hand, 74 of active layers that are folded between first semiconductor layer 72 and second semiconductor layer 75 are formed by most indium gallium nitride retes and most gallium nitride rete interleaving stacks, and active layer 74 has most quantum well (quantumwell) structures.
As for the heat radiation rete 76 of the part surface that is not covered by active layer 74 that is arranged at heat-conducting layer 73, it is one " electron resonance is worn formula thermal electric film then ", and heat radiation rete 76 has a vacuum chamber (not shown).But in different application, heat radiation rete 76 also can be one " semiconductor-type thermal electric film ", is not limited in one " electron resonance is worn formula thermal electric film then ".In addition, because the detailed structure of these two kinds of thermal electric films has been described in detail in preceding, just repeat no more at this.
At last, in this light-emitting diode 7, the material of insulating barrier 77 that is formed at the part surface that is not covered by active layer 74 and heat radiation rete 76 of heat-conducting layer 73 is a silica, and first electrical contacts 781 is the membrane electrode of thallium aluminium alloy, and second electrical contacts 782 is the indium tin oxide films electrode.
Again as shown in Figure 7, the light-emitting diode 7 of third embodiment of the invention also is provided with an electron collection loop 791, it is to be electrically connected on the heat radiation rete 76 and first electrical contacts 781 and is a copper conductor that the electric current (thermocurrent) that obtains from thermal power transfer with the rete 76 that will dispel the heat is passed to first electrical contacts 781.Be noted that, though in the present embodiment, electron collection loop 791 is to be electrically connected on first electrical contacts 781, but in different application, electron collection loop 791 also can be electrically connected on second electrical contacts 782, current delivery to the second electrical contacts 782 that obtains from thermal power transfer with the rete 76 that will dispel the heat.On the other hand, the light-emitting diode 7 of third embodiment of the invention also is provided with an external circuit 792, it is to be electrically connected on first electrical contacts 781 and second electrical contacts 782 and is a copper conductor, so that a drive current that comes from the outside is inputed to the light-emitting diode 7 of third embodiment of the invention via first electrical contacts 781 and second electrical contacts 782, required for light-emitting diode 7 runnings of third embodiment of the invention.
When the light-emitting diode 7 of third embodiment of the invention operated, its active layer 74 produced light and produces considerable heat energy simultaneously.At this moment, just heat-conducting layer 73 comes out " inside " guiding of light-emitting diode 7 from then on of this heat energy and conduct to the external world, as conduct to heat radiation rete 76.And in the present embodiment, heat radiation rete 76 is one " electron resonance is worn formula thermal electric film then ", and its to have a vacuum chamber (not shown) and utilize quantum-mechanical " electronics is worn effect then " be electric current with thermal power transfer, promptly produce so-called " thermocurrent ".Then, this " thermocurrent " is just by quilt is conducted to first electrical contacts 781 with the heat radiation electron collection loop 791 that is electrically connected with first electrical contacts 781 of rete 76 respectively.
Just recyclable utilization of heat energy that is produced when therefore, the light-emitting diode 7 of third embodiment of the invention operates and the light-emitting diode 7 that is applied to drive third embodiment of the invention once more.That is to say, in the light-emitting diode 7 of third embodiment of the invention, those originally can't utilize once more and " heat energy " that flies away in the space can be become the form of electric current by the conversion of heat radiation rete 76, and are applied to drive the light-emitting diode 7 of third embodiment of the invention once more.So, even after long-term operation, the temperature of the light-emitting diode 7 of third embodiment of the invention still can remain in the normal scope, and superheating phenomenon can not take place.That is to say, even after long-term operation, the ray structure of the light-emitting diode 7 of third embodiment of the invention can't be destroyed because of the generation of superheating phenomenon, makes its luminescent lifetime further to prolong, its luminous efficiency also can further promote, and its luminosity is also better stable.
Fig. 8 is the generalized section of the light-emitting diode of fourth embodiment of the invention, and wherein the light-emitting diode 8 of fourth embodiment of the invention comprises: a substrate 81; One is arranged at first semiconductor layer 82 on the surface of substrate 81; One is arranged at the surface of first semiconductor layer 82 and has the heat-conducting layer 83 of an opening (not shown); One is arranged at the active layer 84 of the part surface of heat-conducting layer 83, and active layer 84 is connected with first semiconductor layer 82 by the opening (not shown); One is arranged at second semiconductor layer 85 on the surface of active layer 84, and second semiconductor layer 85 and first semiconductor layer 82 are folded in active layer 84 between the two; One is arranged at the heat radiation rete 86 of the part surface that is not covered by active layer 84 of heat-conducting layer 83; One is formed at the insulating barrier 87 of the part surface that is not covered by active layer 84 and heat radiation rete 86 of heat-conducting layer 83; One is electrically connected on first electrical contacts 881 of first semiconductor layer 82; And second electrical contacts 882 that is electrically connected on second semiconductor layer 85.
In addition, the light-emitting diode 8 of fourth embodiment of the invention also is provided with an electron collection loop 891, it is to be electrically connected on the heat radiation rete 86 and first electrical contacts 881 and is a copper conductor that the electric current (thermocurrent) that obtains from thermal power transfer with the rete 86 that will dispel the heat is passed to first electrical contacts 881.Be noted that, though in the present embodiment, electron collection loop 891 is to be electrically connected on first electrical contacts 881, but in different application, electron collection loop 891 also can be electrically connected on second electrical contacts 882, current delivery to the second electrical contacts 882 that obtains from thermal power transfer with the rete 86 that will dispel the heat.On the other hand, the light-emitting diode 8 of fourth embodiment of the invention also is provided with an external circuit 892, it is to be electrically connected on first electrical contacts 881 and second electrical contacts 882 and is a copper conductor, so that a drive current that comes from the outside is inputed to the light-emitting diode 8 of fourth embodiment of the invention via first electrical contacts 881 and second electrical contacts 882, supply to such an extent that light-emitting diode 8 runnings of fourth embodiment of the invention are required.Except that this, the light-emitting diode 8 of fourth embodiment of the invention also is provided with a storage capacitors 893, it is to be electrically connected on electron collection loop 891, and storage capacitors 893 is applicable to that " thermocurrent " that obtain from thermal power transfer with heat radiation rete 86 is stored in wherein.
When the light-emitting diode 8 of fourth embodiment of the invention operated, its active layer 84 produced light and produces considerable heat energy simultaneously.At this moment, just heat-conducting layer 83 comes out " inside " guiding of light-emitting diode 8 from then on of this heat energy and conduct to the external world, as conduct to heat radiation rete 86.And in the present embodiment, heat radiation rete 86 is one " electron resonance is worn formula thermal electric film then ", and itself and to have a vacuum chamber (not shown) and utilize quantum-mechanical " electronics is worn effect then " be electric current with thermal power transfer, promptly produce so-called " thermocurrent ".Then, this " thermocurrent " is just by quilt is conducted to the storage capacitors 893 or first electrical contacts 881 with the heat radiation electron collection loop 891 that is electrically connected with first electrical contacts 881 of rete 86 respectively.
Therefore, the light-emitting diode 8 of fourth embodiment of the invention is except having the advantage identical with the light-emitting diode 7 of third embodiment of the invention, its storage capacitors 893 more makes the light-emitting diode 8 of fourth embodiment of the invention to utilize the electric current that is stored in the storage capacitors 893 to operate constantly under the situation that does not need extraneous drive current.That is to say that even under the unsettled situation of extraneous drive current, the light-emitting diode 8 of fourth embodiment of the invention still can continue and running stably.
In sum, when light-emitting diode of the present invention operates, light-emitting diode of the present invention can be guided and conduct to the external world with its heat-conducting layer of heat energy utilization that its active layer produced from its " inside ", be so-called " thermocurrent " by its heat radiation rete with this thermal power transfer again.At last, this " thermocurrent " is just by being conducted to its first electrical contacts with the electron collection loop that the heat radiation rete of light-emitting diode of the present invention is electrically connected with first electrical contacts respectively.The energy recovery that is produced when so, light-emitting diode of the present invention can operate it is utilized and is applied to drive lumination of light emitting diode of the present invention once more.So, even after long-term operation, the temperature of light-emitting diode of the present invention still can remain in, and superheating phenomenon can not take place in the normal scope, its ray structure just can be not destroyed because of the generation of superheating phenomenon, make its luminescent lifetime further to prolong, its luminous efficiency also can further promote, and its luminosity is also better stable.In addition, because light-emitting diode of the present invention can be made by the employed various process work bench of present industry, so the processing procedure of light-emitting diode of the present invention and the processing procedure of existing light-emitting diode have great compatibility, and can be widely used in the various inorganic or organic light-emitting diodes.
The foregoing description only is to give an example for convenience of description, and the interest field that the present invention advocated should be as the criterion so that claim is described certainly, but not only limits to the foregoing description.
Claims (33)
1. a light-emitting diode is characterized in that, comprising:
One substrate;
One heat-conducting layer is arranged at the surface of this substrate and has an opening;
One first semiconductor layer is arranged at the part surface of this heat-conducting layer, and this first semiconductor layer also is connected with this substrate by this opening;
One active layer is arranged at the surface of this first semiconductor layer;
One second semiconductor layer is arranged at the surface of this active layer, and this second semiconductor layer and this first semiconductor layer are folded in this active layer between the two;
One heat radiation rete is arranged at the surface of the part that is not covered by this first semiconductor layer of this heat-conducting layer;
One insulating barrier is formed at the surface of the part that is not covered by this first semiconductor layer and this heat radiation rete of heat-conducting layer, and dispels the heat between the rete at this first semiconductor layer and this;
One first electrical contacts is electrically connected on this substrate; And
One second electrical contacts is electrically connected on this second semiconductor layer.
2. light-emitting diode as claimed in claim 1 is characterized in that, wherein also is provided with an electron collection loop, and this electron collection loop is electrically connected on this heat radiation rete and this first electrical contacts.
3. light-emitting diode as claimed in claim 1 is characterized in that, wherein the material of this substrate is the N p type gallium arensidep.
4. light-emitting diode as claimed in claim 1 is characterized in that, wherein also comprise a n type gallium nitride epitaxial layer in the surface of this substrate, and this n type gallium nitride epitaxial layer is between this substrate and this heat-conducting layer.
5. light-emitting diode as claimed in claim 1 is characterized in that, wherein this heat-conducting layer is golden beryllium alloy.
6. light-emitting diode as claimed in claim 1 is characterized in that, wherein the material of this first semiconductor layer is a N type AlGaInP.
7. light-emitting diode as claimed in claim 1 is characterized in that, wherein this heat-conducting layer has a metallic mirror structure in wherein.
8. light-emitting diode as claimed in claim 1 is characterized in that, wherein the material of this active layer is an I type AlGaInP.
9. light-emitting diode as claimed in claim 1 is characterized in that, wherein this active layer has most quantum well structures.
10. light-emitting diode as claimed in claim 1 is characterized in that, wherein the material of this second semiconductor layer is the P p type gallium arensidep.
11. light-emitting diode as claimed in claim 1 is characterized in that, wherein this heat radiation rete is that an electron resonance is worn formula thermal electric film then.
12. light-emitting diode as claimed in claim 1 is characterized in that, wherein this first electrical contacts membrane electrode that is golden nickel alloy.
13. light-emitting diode as claimed in claim 1 is characterized in that, wherein this second electrical contacts is the indium tin oxide films electrode.
14. light-emitting diode as claimed in claim 1 is characterized in that, wherein the material of this insulating barrier is a silica.
15. light-emitting diode as claimed in claim 1 is characterized in that, wherein also is provided with an external circuit, and this external circuit is electrically connected on this first electrical contacts and this second electrical contacts.
16. light-emitting diode as claimed in claim 2 is characterized in that, wherein also is provided with an external circuit, this external circuit is to be electrically connected on this first electrical contacts and this second electrical contacts, and this external circuit and be electrically connected on this electron collection loop.
17. light-emitting diode as claimed in claim 2 is characterized in that, wherein also is provided with a storage capacitors, and this storage capacitors is electrically connected on this electron collection loop.
18. a light-emitting diode is characterized in that, comprising:
One substrate;
One first semiconductor layer is arranged at the surface of this substrate;
One heat-conducting layer is arranged at the surface of this first semiconductor layer and has an opening;
One active layer is arranged at the part surface of this heat-conducting layer, and this active layer also is connected with this first semiconductor layer by this opening;
One second semiconductor layer is arranged at the surface of this active layer, and this second semiconductor layer and this first semiconductor layer are folded in this active layer between the two;
One heat radiation rete is arranged at the surface of the part that is not covered by this active layer of this heat-conducting layer;
One insulating barrier is formed at the surface of the part that is not covered by this active layer and this heat radiation rete of heat-conducting layer, and dispels the heat between the rete at this active layer and this;
One first electrical contacts is electrically connected on this first semiconductor layer; And
One second electrical contacts is electrically connected on this second semiconductor layer.
19. light-emitting diode as claimed in claim 18 is characterized in that, wherein also is provided with an electron collection loop, and this electron collection loop is electrically connected on this heat radiation rete and this first electrical contacts.
20. light-emitting diode as claimed in claim 18 is characterized in that, wherein the material of this substrate is an aluminium oxide.
21. light-emitting diode as claimed in claim 18 is characterized in that, wherein this heat-conducting layer is a rete that is superimposed with each other and is formed by diamond film and metal film.
22. light-emitting diode as claimed in claim 18 is characterized in that, wherein the material of this first semiconductor layer is a n type gallium nitride.
23. light-emitting diode as claimed in claim 18 is characterized in that, wherein this second semiconductor layer has a metallic mirror structure in wherein.
24. light-emitting diode as claimed in claim 18 is characterized in that, wherein this active layer is to be formed by most indium gallium nitride retes and most gallium nitride rete interleaving stacks.
25. light-emitting diode as claimed in claim 18 is characterized in that, wherein this active layer has most quantum well structures.
26. light-emitting diode as claimed in claim 18 is characterized in that, wherein the material of this second semiconductor layer is a P type gallium nitride.
27. light-emitting diode as claimed in claim 18 is characterized in that, wherein this heat radiation rete is that an electron resonance is worn formula thermal electric film then.
28. light-emitting diode as claimed in claim 18 is characterized in that, wherein this first electrical contacts membrane electrode that is the thallium aluminium alloy.
29. light-emitting diode as claimed in claim 18 is characterized in that, wherein this second electrical contacts is the indium tin oxide films electrode.
30. light-emitting diode as claimed in claim 18 is characterized in that, wherein the material of this insulating barrier is a silica.
31. light-emitting diode as claimed in claim 18 is characterized in that, wherein also is provided with an external circuit, and this external circuit is electrically connected on this first electrical contacts and this second electrical contacts.
32. light-emitting diode as claimed in claim 19 is characterized in that, wherein also is provided with an external circuit, this external circuit is to be electrically connected on this first electrical contacts and this second electrical contacts, and this external circuit and be electrically connected on this electron collection loop.
33. light-emitting diode as claimed in claim 19 is characterized in that, wherein also is provided with a storage capacitors, and this storage capacitors is electrically connected on this electron collection loop.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100880938A CN101276861B (en) | 2007-03-26 | 2007-03-26 | Led |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100880938A CN101276861B (en) | 2007-03-26 | 2007-03-26 | Led |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101276861A CN101276861A (en) | 2008-10-01 |
| CN101276861B true CN101276861B (en) | 2011-08-17 |
Family
ID=39996041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100880938A Expired - Fee Related CN101276861B (en) | 2007-03-26 | 2007-03-26 | Led |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101276861B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101893212B (en) * | 2009-05-21 | 2012-09-05 | 沈育浓 | Packaging body for luminous source |
| CN102263185A (en) * | 2010-05-28 | 2011-11-30 | 景德镇正宇奈米科技有限公司 | Thermal radiation light emitting diode structure and manufacturing method thereof |
| CN201829527U (en) * | 2010-05-31 | 2011-05-11 | 景德镇正宇奈米科技有限公司 | Light-emitting diode structure with honeycomb-shaped radiation and heat dissipation device |
| CN103456891A (en) * | 2013-09-10 | 2013-12-18 | 昆山奥德鲁自动化技术有限公司 | Light-emitting diode |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5656823A (en) * | 1994-03-31 | 1997-08-12 | Chulalongkorn University | Amorphous semiconductor thin film light emitting diode |
| CN2582180Y (en) * | 2002-11-21 | 2003-10-22 | 铼宝科技股份有限公司 | Organic LED |
| EP1672705A1 (en) * | 2004-12-17 | 2006-06-21 | Johnsson Lighting Technologies In Göteborg AB | A chip supporting element and method for its manufacture |
| CN2849979Y (en) * | 2005-11-29 | 2006-12-20 | 诠兴开发科技股份有限公司 | High heat radiation LED module |
-
2007
- 2007-03-26 CN CN2007100880938A patent/CN101276861B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5656823A (en) * | 1994-03-31 | 1997-08-12 | Chulalongkorn University | Amorphous semiconductor thin film light emitting diode |
| CN2582180Y (en) * | 2002-11-21 | 2003-10-22 | 铼宝科技股份有限公司 | Organic LED |
| EP1672705A1 (en) * | 2004-12-17 | 2006-06-21 | Johnsson Lighting Technologies In Göteborg AB | A chip supporting element and method for its manufacture |
| CN2849979Y (en) * | 2005-11-29 | 2006-12-20 | 诠兴开发科技股份有限公司 | High heat radiation LED module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101276861A (en) | 2008-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Yasan et al. | 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes | |
| JP4975820B2 (en) | Light emitting diode having light emitting cells of different sizes and light emitting element employing the same | |
| KR101421761B1 (en) | Led semiconductor body and use of an led semiconductor body | |
| US20110193057A1 (en) | LED Having Current Spreading Layer | |
| US20070165414A1 (en) | Light-emitting diode package structure | |
| US20130192654A1 (en) | Thermoelectric module comprising thermoelectric element doped with nanoparticles and manufacturing method of the same | |
| US11538962B2 (en) | Light-emitting element and method for manufacturing light-emitting element | |
| CN101276861B (en) | Led | |
| US10069035B2 (en) | Light-emitting device and lighting system | |
| JP5869237B2 (en) | Photocoupler device | |
| TWI398966B (en) | Light-emitting device and the manufacturing method thereof | |
| CN105355746B (en) | Semiconductor light emitting device including graded region | |
| JP5970161B2 (en) | Photocoupler device | |
| US9087946B2 (en) | Light emitting device | |
| US20130105809A1 (en) | Light emitting diode chip with high heat-dissipation efficiency | |
| JP3543809B2 (en) | Nitride semiconductor device | |
| JP3903988B2 (en) | Nitride semiconductor device | |
| KR101240277B1 (en) | Nitride-based thermoelectric semiconductor integrated light emitting diode and method of manufacturing thereof | |
| KR102212781B1 (en) | Light emitting device and lighting system | |
| KR20190098624A (en) | Semiconductor divece and package including same | |
| KR20120045120A (en) | Light emitting device | |
| CN203351641U (en) | Effective opto-electronic device with multi-active regions | |
| KR20090004044A (en) | Semiconductor light emitting device and fabrication method thereof | |
| JP6114842B2 (en) | Photo coupler | |
| KR20180051848A (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: HECHUN SCIENCE + TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: LI CHONGHUA Effective date: 20130401 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20130401 Address after: Taipei City, Taiwan, China Patentee after: Aurotek Corporation Address before: Taipei City, Taiwan, China Patentee before: Li Chonghua |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110817 Termination date: 20160326 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |