CN101271930B - Photvoltaic device and method of manufacturing the same - Google Patents
Photvoltaic device and method of manufacturing the same Download PDFInfo
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- CN101271930B CN101271930B CN2008100868409A CN200810086840A CN101271930B CN 101271930 B CN101271930 B CN 101271930B CN 2008100868409 A CN2008100868409 A CN 2008100868409A CN 200810086840 A CN200810086840 A CN 200810086840A CN 101271930 B CN101271930 B CN 101271930B
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 139
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 84
- 239000010703 silicon Substances 0.000 claims abstract description 84
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 66
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 238000010790 dilution Methods 0.000 claims description 4
- 239000012895 dilution Substances 0.000 claims description 4
- 230000000052 comparative effect Effects 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 12
- 150000002431 hydrogen Chemical class 0.000 description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- -1 phosphine hydrogen Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A photovoltaic device capable of improving an output characteristic is obtained. This photovoltaic device includes a first conductivity type crystalline silicon region, a second conductivity type first noncrystalline silicon layer and a substantially intrinsic second noncrystalline silicon layer arranged between the crystalline silicon region and the first noncrystalline silicon layer, and the crystalline silicon region has an aperiodic corrugated shape having a height of not more than 2 nm on the interface between the same and the second noncrystalline silicon layer.
Description
Technical field
The present invention relates to Photvoltaic device and manufacture method thereof, particularly have the first conductivity type silicon metal, the second conductivity type the first amorphous silicon layer and be configured in silicon metal and the first amorphous silicon layer between Photvoltaic device and the manufacture method thereof of the second amorphous silicon layer of the true property of essence.
Background technology
Now, known have p-type monocrystalline silicon substrate (silicon metal), N-shaped noncrystalline silicon layer (the first amorphous silicon layer) and be configured in the p-type monocrystalline silicon substrate and N-shaped noncrystalline silicon layer between the Photvoltaic device of i type noncrystalline silicon layer (the second amorphous silicon layer) of the true property of essence.For example, in " T.H.Wang; E.Iwaniczko; M.R.Page; D.H.Levi; Y.Yan, H.M.Branz, Q.Wang " Effect of emitter deposition temperature on surface passivation inhotwire chemical vapor deposited silicon heterojunction solar cells " ThinSolid Films 501 (2006) 284-287 ", disclose this Photvoltaic device.
In the data of above-mentioned T.H.Wang etc., disclose following situation: when forming i type noncrystalline silicon layer at the p-type monocrystalline silicon substrate, on the surface of the p-type monocrystalline silicon substrate at the interface of p-type monocrystalline silicon substrate and i type noncrystalline silicon layer, form the epitaxial loayer of concaveconvex shape by epitaxial growth.And, also record when this epitaxial loayer is significantly grown, because interfacial characteristics is deteriorated, cause the output characteristic of Photvoltaic device to reduce.Also motion has in the data of above-mentioned T.H.Wang etc.: for the reduction of the output characteristic that suppresses above-mentioned Photvoltaic device, when forming i type noncrystalline silicon layer at the p-type monocrystalline silicon substrate, be that low temperature is suppressed at the silicon metal (epitaxial loayer) that forms on the p-type monocrystalline silicon substrate by the epitaxial growth generation by making substrate temperature.That is, in the structure of the propositions such as above-mentioned T.H.Wang, on the p-type monocrystalline silicon substrate, do not form epitaxial loayer, and be formed with i type noncrystalline silicon layer.
Summary of the invention
An object of the present invention is to provide Photvoltaic device and manufacture method thereof that output characteristic is improved more.
The Photvoltaic device of a first aspect of the present invention, it has: the silicon metal of the first conductivity type; The first amorphous silicon layer of the second conductivity type; And be configured in the second amorphous silicon layer of the true property of essence between silicon metal and the first amorphous silicon layer, wherein, silicon metal is provided with the aperiodic concaveconvex shape of the height that has below the 2nm at the interface with the second amorphous silicon layer.Wherein, the silicon metal among the present invention is the concept of the broadness of membrane polysilicon of comprising the system of crystallization silicon substrate, forming at substrate etc.And the first amorphous silicon layer among the present invention and the second amorphous silicon layer also comprise the concept of the broadness of microcrystal silicon layer for not only comprising the noncrystalline silicon layer.
As mentioned above, in the Photvoltaic device of this first aspect, form the aperiodic concaveconvex shape with the height below the 2nm by the interface at silicon metal and the second amorphous silicon layer, compare with the large situation of the aspect ratio 2nm of aperiodic concaveconvex shape and the situation that do not form aperiodic concaveconvex shape, can more improve the output characteristic of Photvoltaic device.This effect obtains probatio inspectionem pecuoarem by experiment described later.
In said structure, the aperiodic concaveconvex shape of silicon metal also can have the following height of 1nm.
In said structure, have the centre plane at the interface of the silicon metal of aperiodic concaveconvex shape and the second amorphous silicon, also can be from the angle of (111) face tilt regulation of silicon metal.
In said structure, centre plane is from (111) face tilt 3 ± 1 degree of silicon metal.
In said structure, silicon metal comprises: be formed with (111) and show out in a plurality of platform part (terrace) on surface and the crystalline silicon substrate of the stage portion that is connected the platform part that adjoins each other; With epitaxially grown epitaxial loayer on crystalline silicon substrate, centre plane also can be on the surface of showing out from (111) of the platform part of crystalline silicon substrate on the direction of rotation of the outer surface of above-mentioned stage portion, from the angle of (111) face tilt regulation of above-mentioned silicon metal.
In said structure, the part with near interface the second amorphous silicon silicon metal also can be made of the silicon metal that forms by epitaxial growth.
In said structure, the second amorphous silicon layer also can contain the following hydrogen of ormal weight.
In said structure, also following mechanism can be arranged, that is, be formed with pyramid (pyramid) shape on the surface of silicon metal concavo-convex, be formed with aperiodic concaveconvex shape on the concavo-convex surface of prism-like.
In said structure, also can constitute, light is from the surperficial incident of the second amorphous silicon layer one side crystallization silicon of being formed with aperiodic concaveconvex shape at least.
In said structure, silicon metal also can comprise monocrystalline silicon substrate.
In said structure, the first amorphous silicon layer and the second amorphous silicon layer also can be made of uncrystalline silicon.
In said structure, can also have: with respect to silicon metal, be configured in the 3rd amorphous silicon layer of the first conductivity type of a side opposite with the first amorphous silicon layer; And be configured in the 4th amorphous silicon layer of the true property of essence between silicon metal and the 3rd amorphous silicon layer.
In said structure, the 3rd amorphous silicon layer and above-mentioned the 4th amorphous silicon layer also can be made of uncrystalline silicon.
The manufacture method of a kind of Photvoltaic device of a second aspect of the present invention, it comprises: show out the operation that the crystalline silicon substrate in a plurality of platform part (terrace) on surface and the stage portion that is connected the platform part that adjoins each other is formed to being formed with (111); Form the operation of the first amorphous silicon layer of the true property of essence at silicon metal; With the operation that forms the second amorphous silicon layer of the second conductivity type at the first amorphous silicon layer, wherein, the operation that forms the first amorphous silicon layer is included in the operation that forms at the interface the aperiodic concaveconvex shape with the following height of 2nm of silicon metal and the first amorphous silicon layer.
In said structure, silicon metal also can comprise monocrystalline silicon substrate.
In said structure, the operation that forms the first amorphous silicon layer also can comprise: form the epitaxial loayer with epitaxially grown aperiodic concaveconvex shape at monocrystalline silicon substrate, and form the operation of the first amorphous silicon layer at epitaxial loayer.
In said structure, the operation that forms the first amorphous silicon layer also can comprise the operation of utilizing plasma CVD method to form the first amorphous silicon layer.
In said structure, the operation that forms the first amorphous silicon layer also can comprise: under the dilution rate of the hydrogen of silane gas is condition below 5 times, utilize plasma CVD method to form the operation of the first amorphous silicon layer.
In said structure, have the centre plane at the interface of the silicon metal of aperiodic concaveconvex shape and the first amorphous silicon, also can be from the angle of (111) face tilt regulation of silicon metal.
In said structure, centre plane also can be on the surface of showing out from (111) of the platform part of silicon metal on the direction of rotation of the outer surface of stage portion, from the angle of (111) face tilt regulation of above-mentioned silicon metal.
Description of drawings
Fig. 1 is the sectional view of the structure of the Photvoltaic device of expression an embodiment of the invention.
Fig. 2 is the sectional view of the detailed structure of expression N-shaped monocrystalline silicon substrate periphery shown in Figure 1.
Fig. 3 forms the sectional view of i type noncrystalline silicon layer N-shaped monocrystalline silicon substrate before for expression.
Fig. 4 is the amplification sectional view at the interface of the expression N-shaped monocrystalline silicon substrate of embodiment and i type noncrystalline silicon layer.
Embodiment
Below, with reference to the accompanying drawings, the execution mode that the present invention is specialized is illustrated.
At first, the see figures.1.and.2 structure of Photvoltaic device of explanation present embodiment.
As shown in Figure 1, in the Photvoltaic device of present embodiment, on a surface of N-shaped monocrystalline silicon (c-Si) substrate 1, be formed with successively uncrystalline silicon (a-Si) layer 2, have about 70nm～approximately the thickness of 100nm the surface electrode 3 that is consisted of by ITO (tin indium oxide) and have the collector electrode 4 that is consisted of by silver of tens μ m thickness.Noncrystalline silicon layer 2 by the upper surface at N-shaped monocrystalline silicon substrate 1 form have about 9nm～i type noncrystalline silicon layer 2a approximately true property of the essence of the less thickness of 13nm and that contain the hydrogen below the ormal weight and form at i type noncrystalline silicon layer 2a, thickness is about p-type noncrystalline silicon layer 2b 2nm～5nm, that be doped with boron (B) and contain hydrogen and consists of.Wherein, the thickness of i type noncrystalline silicon layer 2a is that i type noncrystalline silicon layer 2a does not have in fact contributive less thickness to generating.In addition, N-shaped monocrystalline silicon substrate 1, i type noncrystalline silicon layer 2a and p-type noncrystalline silicon layer 2b are respectively an example of " silicon metal " of the present invention, " the second amorphous silicon layer " and " the first amorphous silicon layer ".
In addition, as shown in Figure 2, be formed with larger pyramid-shaped on a surface of N-shaped monocrystalline silicon substrate 1 concavo-convex, have the concavo-convex surface of pyramid-shaped at this and be formed with i type noncrystalline silicon layer 2a, p-type noncrystalline silicon layer 2b and surface electrode 3.The concavo-convex width W of this pyramid-shaped is about a few μ m～tens μ m, and height H 1 is about a few μ m～tens μ m.Silicon (111) face exposes on the concavo-convex surface of this pyramid-shaped.When making light from surface one a side incident, because the light enclosed construction of the concavo-convex formation of this pyramid-shaped, the light reflectivity on a surface of N-shaped monocrystalline silicon substrate 1 reduces, and can increase short circuit current.
In addition, as shown in Figure 1, on another surface of N-shaped monocrystalline silicon substrate 1, from near a side on another surface of N-shaped monocrystalline silicon substrate 1, the thickness that be formed with successively noncrystalline silicon layer 5, is made of ITO is the surface electrode 6 of the approximately 100nm of 70nm～approximately and is the collector electrode 7 of tens μ m by the thickness that silver consists of.The i type noncrystalline silicon layer 5a with the true property of the essence of the less thickness of 13nm of about 9nm～approximately that noncrystalline silicon layer 5 is formed by another surface at N-shaped monocrystalline silicon substrate 1 and form on another surface of i type noncrystalline silicon layer 5a, thickness is that approximately 10nm～N-shaped noncrystalline silicon layer 5b approximately 20nm, that be doped with phosphorus (P) consists of.The thickness of i type noncrystalline silicon layer 5a is that i type noncrystalline silicon layer 5a does not have contributive less thickness to generating in fact.In addition, consist of so-called back surface field is arranged (BSF:Back Surface Field) structure by i type noncrystalline silicon layer 5a, N-shaped noncrystalline silicon layer 5b and surface electrode 6.And the Photvoltaic device of this structure utilizes the side on a surface of N-shaped monocrystalline silicon substrate 1 as light incident side usually, also can utilize the side on another surface of N-shaped monocrystalline silicon substrate 1 as light entrance face.
Then, with reference to Fig. 1～Fig. 4, to the Photvoltaic device of the above-mentioned execution mode of actual fabrication and the comparative experiments (embodiment and comparative example 1,2) when estimating output characteristic be illustrated.
At first, the manufacture process of the Photvoltaic device of the embodiment corresponding with above-mentioned execution mode is illustrated.
At first, as shown in Figure 2, carry out anisotropic etching by the surface to N-shaped monocrystalline silicon substrate 1 with (100) face, form the pyramid-shaped concaveconvex shape of (111) face that results from.And, under this state, as shown in Figure 3, be formed with the stage portion 1c of silicon (111) the platform part 1b that shows out and the platform part 1b that is connected adjacency on the surface of N-shaped monocrystalline silicon substrate 1.Below, the surface of minute another name platform part 1b and the surface of stage portion 1c are the minor face of interarea He (111) face of (111) face.
Afterwards, under the condition of following table 1, form each layer on a surface and another surface of N-shaped monocrystalline silicon substrate 1.
Table 1
Particularly, as shown in table 1, use the RF plasma CVD method, be 130 ℃～180 ℃ at substrate temperature, H
2Gas flow is 0sccm～100sccm, silane (SiH
4) gas flow is 40sccm, pressure is 40Pa～120Pa, the RF power density is 5mW/cm
2～15mW/cm
2Condition under, forming thickness on surface of N-shaped monocrystalline silicon substrate 1 is the i type noncrystalline silicon layer 2a of 10nm.At this moment, use gas (H with the flow control of 0sccm～100sccm
2) flow so that silane (SiH
4) the hydrogen dilution rate of gas is below 5 times.Thus, take the stage portion 1c of Fig. 3 as starting point, form epitaxial loayer 1a, and form i type noncrystalline silicon layer 2a at epitaxial loayer 1a.In addition, because epitaxial loayer 1a is stacked on the centre plane (surface of N-shaped monocrystalline silicon substrate 1) of stage portion 1c and platform part 1b, so the centre plane of the aperiodic concaveconvex shape part of epitaxial loayer 1a is with respect to the angle of exposing silicon (111) the face tilt regulation on platform part 1b.Like this, as shown in Figure 4, form aperiodic concaveconvex shape part at the interface of N-shaped monocrystalline silicon substrate 1 and i type noncrystalline silicon layer 2a, and, i type noncrystalline silicon layer 2a formed in this concaveconvex shape part.
Then, as shown in table 1, utilize the RF plasma CVD method, be 150 ℃～180 ℃ at substrate temperature, hydrogen (H
2) gas flow is 0sccm～100sccm, silane (SiH
4) gas flow is 40sccm, diborane (B
2H
6)/H
2(B
2H
6Gas is for H
2Concentration be 2%) gas flow is 40sccm, pressure is that 40Pa～120Pa and RF power density are 5mW/cm
2～15mW/cm
2Condition under, forming thickness at i type noncrystalline silicon layer 2a is p-type noncrystalline silicon layer 2b 6nm, that be doped with boron (B).
Then, as shown in table 1, use the RF plasma CVD method, be 170 ℃ at substrate temperature, silane (SiH
4) gas flow is 40sccm, pressure is that 40Pa and RF power density are 8.33mW/cm
2Under the condition, forming thickness on another surface of N-shaped monocrystalline silicon substrate 1 is the i type noncrystalline silicon layer 5a of 10nm.
Then, as shown in table 1, utilize the RF plasma CVD method, be 170 ℃ at substrate temperature, hydrogen (H
2) throughput is 0sccm～100sccm, silane (SiH
4) gas flow is 40sccm, phosphine hydrogen (PH
3)/H
2(PH
3For H
2Concentration be 1%) gas flow is 40sccm, pressure is that 40Pa and RF power density are 8.33mW/cm
2Condition under, forming thickness on another surface of i type noncrystalline silicon layer 5a is the N-shaped noncrystalline silicon layer 5b that is doped with phosphorus (P) of 15nm.
At last, utilize sputtering method, after forming respectively the surface electrode 3 and surface electrode 6 that the thickness that is made of ITO is 85nm on the surface of p-type noncrystalline silicon layer 2b and on the surface of N-shaped noncrystalline silicon layer 5b, it is the collector electrode 4,7 of tens μ m that the regulation zone on surface electrode 3 and surface electrode 6 forms the thickness that is made of silver.Like this, form the Photvoltaic device of embodiment.
In addition, the Photvoltaic device of the comparative example 1 corresponding with an existing example, the formation condition during as formation i type noncrystalline silicon layer is so that silane (SiH
4) the hydrogen dilution rate of gas becomes than 5 times of large modes also, and hydrogen flowing quantity is remained higher value near 100sccm definitely, form thus.In addition, the Photvoltaic device of the comparative example 2 corresponding with existing another example, the formation condition during as formation i type noncrystalline silicon layer is with H
2Gas flow remains definitely near the lower value of 0sccm and forms.The manufacture process of part in addition is identical with the Photvoltaic device of above-described embodiment.
In the Photvoltaic device of embodiment, as shown in Figure 4, be formed with aperiodic small concaveconvex shape at the interface of N-shaped monocrystalline silicon substrate 1 and i type noncrystalline silicon layer 2a.In addition, the part that comprises concaveconvex shape (epitaxial loayer 1a) of the near interface of N-shaped mono-crystalline substrate 1 and i type noncrystalline silicon layer 2a is the part that forms by epitaxial growth when forming i type noncrystalline silicon layer 2a.The small concavo-convex height H 2 of this epitaxial loayer 1a is less than 1nm.
And for example shown in Figure 4, centre plane with N-shaped monocrystalline silicon substrate 1 and interface i type noncrystalline silicon layer 2a of aperiodic concaveconvex shape, from the interarea (surface of the platform part 1b that show out (111)) of (111) face of N-shaped monocrystalline silicon substrate 1 towards the tilt angle [alpha] (approximately 3 ± 1 degree) of regulation of the direction of rotation of minor face (outer surface of stage portion 1c).
In addition, the Photvoltaic device of comparative example 1 is made by utilizing above-mentioned formation condition, and its epitaxial growth is promoted, and the aspect ratio 2nm of aperiodic concavo-convex part (epitaxial loayer) is large by epitaxial growth comprising of forming.In addition, the Photvoltaic device of comparative example 2, make by utilizing above-mentioned formation condition, can't help epitaxial growth at the interface of N-shaped monocrystalline silicon substrate and i type noncrystalline silicon layer forms aperiodic jog, and directly is formed with i type noncrystalline silicon layer on the surface of the N-shaped monocrystalline silicon substrate with platform part 1b shown in Figure 3 and stage portion 1c.
Then, the output characteristic with the Photvoltaic device of embodiment, comparative example 1 and the comparative example 2 of said method manufacturing is measured.Determination data is Voc (open voltage), Isc (short circuit current), F.F (Fill factor) and Pmax (battery (cell) power).This measurement result is illustrated in the following table 2.
Table 2
| Voc(V) | Isc(A) | F.F | Pmax(W) | |
| Embodiment | 0.725 | 3.850 | 0.769 | 2.147 |
| Comparative example 1 | 0.680 | 3.820 | 0.752 | 1.953 |
| Comparative example 2 | 0.709 | 3.880 | 0.762 | 2.096 |
As shown in Table 2 above, be formed with the comparative example 1 of the large epitaxial loayer of aspect ratio 2nm with respect to the interface at N-shaped monocrystalline silicon substrate and i type noncrystalline silicon layer, the output characteristic that does not form the comparative example 2 of epitaxial loayer improves.Particularly, the open voltage Voc of comparative example 1 is 0.680V, and the open voltage Voc of comparative example 2 is 0.709V.Consider that this is that following reason causes.That is, owing in comparative example 1, be formed with the large epitaxial loayer of aspect ratio 2nm, so compare the deterioration in characteristics at the interface of the N-shaped monocrystalline silicon substrate of comparative example 1 and i type noncrystalline silicon layer with the comparative example 2 that does not form epitaxial loayer.Think that the open voltage Voc of comparative example 2 uprises because this interfacial characteristics deteriorated causes comparing with comparative example 1.
In addition, with respect to comparative example 2, in the embodiment that is formed with the little epitaxial loayer 1a of aspect ratio 1nm, output characteristic improves more.Particularly, the open voltage Voc of comparative example 2 is 0.709V, and the open voltage Voc of embodiment is 0.725V.
In addition, the short circuit current Isc of comparative example 2 is also large than comparative example 1.But the short-circuit current ratio comparative example 1 of embodiment is large, and is less than comparative example 2.Particularly, the short circuit current of comparative example 1, comparative example 2 and embodiment is respectively 3.820A, 3.880A and 3.850A.That is, the lower short circuit current of the height of epitaxial loayer more increases as can be known.
In addition, the Fill factor F.F of comparative example 2 is larger than comparative example 1, and the Fill factor F.F of embodiment is larger than comparative example 2.Particularly, comparative example 1, comparative example 2 and embodiment Fill factor F.F are respectively 0.752,0.762 and 0.769.
In addition, the power of battery Pmax of comparative example 2 is larger than comparative example 1, and embodiment is larger than comparative example 2.Particularly, the power of battery Pmax of comparative example 1, comparative example 2 and embodiment is respectively 1.953W, 2.096W and 2.147W.Like this, compare with 2 with comparative example 1, the power of battery of embodiment is significantly improved.
As mentioned above, in present embodiment and embodiment, by the height of formation aperiodic concaveconvex shape less than 1nm on the interface of N-shaped monocrystalline silicon substrate 1 and i type noncrystalline silicon layer 2a, compare with the situation that does not form aperiodic concaveconvex shape with the situation that the aspect ratio 2nm of aperiodic concaveconvex shape is large, can improve the characteristic of Photvoltaic device.
And execution mode described above and embodiment are illustration in all respects, should not think restriction.Scope of the present invention be can't help the above-described embodiment and examples and is represented, and is represented by summary of the invention of the present invention, and comprises that the scope with summary of the invention is equivalent and the whole changes in the scope of summary of the invention.
For example, in the above-described embodiment and examples, the example across the i type noncrystalline silicon layer 2a of the true property of essence formation p-type noncrystalline silicon layer 2b on a surface of N-shaped monocrystalline silicon substrate 1 is illustrated, but the invention is not restricted to this, also can be on a surface of p-type monocrystalline silicon substrate, across the i type noncrystalline silicon layer formation N-shaped noncrystalline silicon layer of the true property of essence.In this case, also can be on another surface of p-type monocrystalline silicon substrate, across the i type noncrystalline silicon layer formation p-type noncrystalline silicon layer of the true property of essence.
In addition, in the above-described embodiments, the aperiodic concavo-convex height with epitaxial loayer 1a is formed the example less than 1nm be illustrated, but the invention is not restricted to this, also can form below the 2nm.Like this, be below the 2nm by making aperiodic concavo-convex height, same as the previously described embodiments, can improve the output characteristic of Photvoltaic device.
In addition, in the above-described embodiment and examples, the example that utilizes the RF plasma CVD method to form noncrystalline silicon layer 2 (i type noncrystalline silicon layer 2a and p-type noncrystalline silicon layer 2b) is illustrated, but the invention is not restricted to this, also can utilize other film-shaped established law such as ECR (electron cyclotron resonace) plasma CVD method, catalytic chemical gaseous phase deposition (Cat-CVD:Catalytic ChemicalVapor Deposition) method and sputtering method to form noncrystalline silicon layer 2.
In addition, in above-described embodiment form and embodiment, although have the BSF structure that is formed with noncrystalline silicon layer 2 (i type amorphous layer silicon layer 2a and N-shaped noncrystalline silicon layer 2b) on another surface of N-shaped monocrystalline silicon substrate 1, but the invention is not restricted to this, also can be on another surface of N-shaped monocrystalline silicon substrate, do not form the noncrystalline silicon layer of n side (rear side) and form surface electrode.
In addition, in the above-described embodiment and examples, although to N-shaped monocrystalline silicon substrate 1 with the aperiodic concaveconvex shape centre plane with the interface of i type noncrystalline silicon layer 2a, be illustrated towards the tilt example of angle [alpha] (approximately 3 ± 1 degree) of regulation of the direction of rotation of minor face from the interarea of (111) face of N-shaped monocrystalline silicon substrate 1, but the invention is not restricted to this, the predetermined angular α that also can tilt (approximately 3 ± 1 degree) angle in addition.
In addition, in the above-described embodiment and examples, there is the example of aperiodic concaveconvex shape to be illustrated to the interface formation at N-shaped monocrystalline silicon substrate 1 and i type noncrystalline silicon layer 2a, but the invention is not restricted to this, also can form aperiodic concaveconvex shape at the interface of N-shaped monocrystalline silicon substrate 1 and i type noncrystalline silicon layer 5a.
Claims (20)
1. a Photvoltaic device is characterized in that, comprising:
The silicon metal of the first conductivity type;
The first amorphous silicon layer of the second conductivity type; With
Be configured in the second amorphous silicon layer of the intrinsic between described silicon metal and described the first amorphous silicon layer, wherein
Described silicon metal comprises:
Being formed with (111) shows out in a plurality of platform part on surface and the crystalline silicon substrate of the stage portion that is connected the described platform part that adjoins each other; With
Epitaxially grown epitaxial loayer on described crystalline silicon substrate,
Described silicon metal is at the aperiodic concaveconvex shape of the height that has below the 2nm with being formed with at the interface of described the second amorphous silicon layer.
2. Photvoltaic device as claimed in claim 1 is characterized in that:
The aperiodic concaveconvex shape of described silicon metal has the following height of 1nm.
3. Photvoltaic device as claimed in claim 1 is characterized in that:
Centre plane with interface of the silicon metal of described aperiodic concaveconvex shape and described the second amorphous silicon is from (111) face tilt of described silicon metal.
4. Photvoltaic device as claimed in claim 3 is characterized in that:
Described centre plane is from (111) face tilt 3 ± 1 degree of described silicon metal.
5. Photvoltaic device as claimed in claim 3 is characterized in that:
Described centre plane, on the surface of showing out from (111) of the platform part of described crystalline silicon substrate on the direction of rotation of the outer surface of described stage portion, from (111) face tilt of described silicon metal.
6. Photvoltaic device as claimed in claim 1 is characterized in that:
Part with near interface described the second amorphous silicon described silicon metal is made of the silicon metal that forms by epitaxial growth.
7. Photvoltaic device as claimed in claim 1 is characterized in that:
The following hydrogen of amount that described the second amorphous silicon layer contains and keeps this second amorphous silicon layer is intrinsic.
8. Photvoltaic device as claimed in claim 1 is characterized in that:
Be formed with pyramid-shaped on the surface of described silicon metal concavo-convex, be formed with described aperiodic concaveconvex shape on the concavo-convex surface of described pyramid-shaped.
9. Photvoltaic device as claimed in claim 1 is characterized in that:
Consist of in the mode from the described silicon metal incident of described the second amorphous silicon layer one side direction that is formed with described aperiodic concaveconvex shape of light at least.
10. Photvoltaic device as claimed in claim 1 is characterized in that:
Described silicon metal comprises monocrystalline silicon substrate.
11. Photvoltaic device as claimed in claim 1 is characterized in that:
Described the first amorphous silicon layer and described the second amorphous silicon layer are made of uncrystalline silicon.
12. Photvoltaic device as claimed in claim 1 is characterized in that, also comprises:
With respect to described silicon metal, be configured in the 3rd amorphous silicon layer of the first conductivity type of a side opposite with described the first amorphous silicon layer; With
Be configured in the 4th amorphous silicon layer of the intrinsic between described silicon metal and described the 3rd amorphous silicon layer.
13. Photvoltaic device as claimed in claim 12 is characterized in that:
Described the 3rd amorphous silicon layer and described the 4th amorphous silicon layer are made of uncrystalline silicon.
14. the manufacture method of a Photvoltaic device is characterized in that, comprising:
Form the operation of the silicon metal of the first conductivity type, the silicon metal of this first conductivity type is formed with face (111) and exposes a plurality of platform part and the stage portion that is connected the described platform part that adjoins each other on the surface;
Form the operation of the first amorphous silicon layer of intrinsic at described silicon metal; With
Form the operation of the second amorphous silicon layer of the second conductivity type at described the first amorphous silicon layer, wherein
The operation that forms described the first amorphous silicon layer is included in the operation that forms at the interface the aperiodic concaveconvex shape with the following height of 2nm of described silicon metal and described the first amorphous silicon layer.
15. the manufacture method of Photvoltaic device as claimed in claim 14 is characterized in that:
Described silicon metal comprises monocrystalline silicon substrate.
16. the manufacture method of Photvoltaic device as claimed in claim 15 is characterized in that:
The operation that forms described the first amorphous silicon layer comprises: form epitaxially grown epitaxial loayer with described aperiodic concaveconvex shape at described monocrystalline silicon substrate, and form the operation of described the first amorphous silicon layer at described epitaxial loayer.
17. the manufacture method of Photvoltaic device as claimed in claim 14 is characterized in that:
The operation that forms described the first amorphous silicon layer comprises the operation of utilizing plasma CVD method to form described the first amorphous silicon layer.
18. the manufacture method of Photvoltaic device as claimed in claim 17 is characterized in that:
The operation that forms described the first amorphous silicon layer comprises: under the dilution rate of the hydrogen of silane gas is condition below 5 times, utilize plasma CVD method to form the operation of described the first amorphous silicon layer.
19. the manufacture method of Photvoltaic device as claimed in claim 14 is characterized in that:
Centre plane with described interface of described aperiodic concaveconvex shape is from (111) face tilt of described silicon metal.
20. the manufacture method of Photvoltaic device as claimed in claim 19 is characterized in that:
Described centre plane, on the surface of showing out from (111) of the platform part of described silicon metal on the direction of rotation of the outer surface of described stage portion, from (111) face tilt of described silicon metal.
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| JP2008030373A JP4660561B2 (en) | 2007-03-19 | 2008-02-12 | Photovoltaic device |
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| JP5502412B2 (en) * | 2009-09-30 | 2014-05-28 | 三洋電機株式会社 | Method for manufacturing photovoltaic device |
| KR101132292B1 (en) * | 2010-01-29 | 2012-04-05 | (주)세미머티리얼즈 | Silicon based solar cell with excellent light absorption and photoelectric transformation and method of manufacturing the solar cell |
| WO2011102352A1 (en) * | 2010-02-22 | 2011-08-25 | 国立大学法人東京農工大学 | Solar cell, and process for production of solar cell |
| JP5927028B2 (en) * | 2011-05-11 | 2016-05-25 | 株式会社半導体エネルギー研究所 | Photoelectric conversion device |
| JP2013105883A (en) * | 2011-11-14 | 2013-05-30 | Sharp Corp | Photoelectric conversion element |
| CN105144399A (en) * | 2013-03-19 | 2015-12-09 | 长州产业株式会社 | Photovoltaic element and manufacturing method therefor |
| JP2015138829A (en) * | 2014-01-21 | 2015-07-30 | 長州産業株式会社 | Solar battery module |
| JP6745491B2 (en) * | 2016-09-30 | 2020-08-26 | パナソニックＩｐマネジメント株式会社 | Solar cell, solar cell module, and method for manufacturing solar cell |
| JPWO2018142544A1 (en) * | 2017-02-02 | 2019-06-27 | 三菱電機株式会社 | Solar cell module and method of manufacturing the same |
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| JP2004221142A (en) * | 2003-01-10 | 2004-08-05 | Sanyo Electric Co Ltd | Photovoltaic device and its manufacturing method |
| US7119028B1 (en) * | 2003-10-29 | 2006-10-10 | The United States Of America As Represented By The Secretary Of The Navy | Surface imprinted films with carbon nanotubes |
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| JP2005142268A (en) | 2003-11-05 | 2005-06-02 | Canon Inc | Photovoltaic element and its manufacturing method |
| JP2006100652A (en) | 2004-09-30 | 2006-04-13 | Sanyo Electric Co Ltd | Photovoltaic device |
| JP4587988B2 (en) | 2006-06-13 | 2010-11-24 | 京セラ株式会社 | Method for manufacturing solar cell element |
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| JP5359404B2 (en) | 2013-12-04 |
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| JP2009164625A (en) | 2009-07-23 |
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