CN101269576A - 制造喷墨打印头的方法 - Google Patents

制造喷墨打印头的方法 Download PDF

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CN101269576A
CN101269576A CNA2007101691666A CN200710169166A CN101269576A CN 101269576 A CN101269576 A CN 101269576A CN A2007101691666 A CNA2007101691666 A CN A2007101691666A CN 200710169166 A CN200710169166 A CN 200710169166A CN 101269576 A CN101269576 A CN 101269576A
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substrate
front surface
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feed channel
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李镇郁
金敬镒
朴性俊
金一宇
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Samsung Electronics Co Ltd
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Abstract

一种制造喷墨打印头的方法,包括:准备具有(110)晶面取向的单晶硅晶片作为基板;在硅基板的前表面形成加热墨水的加热器;在加热器以内形成沟槽;在基板的前表面形成限定墨水通路的流动通道层;在流动通道层上形成具有喷嘴的喷嘴层;以及通过各向异性湿法蚀刻,从基板的后表面到沟槽形成供墨通道。

Description

制造喷墨打印头的方法
技术领域
本发明涉及一种制造喷墨打印头的方法,尤其涉及一种通过使用湿法蚀刻制造具有供墨通道的喷墨打印头的方法。
背景技术
喷墨打印头是通过向打印介质上的指定位置喷射墨滴以形成图像的设备。根据墨滴喷射机制,喷墨打印头大体上分为电热型和压电型两类。电热型打印头使用加热源在墨水中产生气泡,并借助气泡的膨胀力喷出墨滴。
图1是表示相关技术中电热型喷墨打印头的截面图。如图1所示,电热型打印头通常包括:硅晶片基板1;形成于基板1上用以供墨的供墨通道;设置在基板1上,具有流动通道3a和墨腔3b的流动通道层3;以及设置在流动通道层3上,具有与墨腔3b相对应的喷嘴4a的喷嘴层4。
在所述喷墨打印头中,供墨通道2通过干法蚀刻或者湿法蚀刻形成。因为一般不能进行批量处理,干法蚀刻耗费更高的制造成本和更多的制造时间。而由于大量晶片可以同时浸入蚀刻溶液并蚀刻,湿法蚀刻在产率上具有优势。
湿法蚀刻具有工艺控制难度,因为不能容易地获得所期望的蚀刻形状。在图1中,基板1有(100)晶格取向(在下文中,称为“(100)晶片”)。供墨通道2通过湿法蚀刻形成。如果供墨通道2在(100)晶片上通过湿法蚀刻形成,则由于硅的晶体结构的原因,供墨通道2的内壁2a以约54.7度倾斜。在这种供墨通道2中,在基板1后表面的开口2b比在基板1前表面的开口2c大许多。因为多种原因,在喷墨打印头中这一结构是不期望的。
详细地,如图1所示,如果后表面开口2b较大,则后表面具有更小的安装区域,在该安装区域喷墨打印头安装到墨盒(cartridge),因此墨水可能泄露。如果为了获得足够的安装区域而增加基板1的尺寸,则打印头的整个尺寸也将增加。而且,对基板1后表面增加的蚀刻会降低打印头的结构刚性,而且打印头可能因为受到内部残余应力或外力而轻易变形或损坏。
发明内容
本发明的一方面提供了一种制造喷墨打印头的方法,其通过使用湿法蚀刻提高了生产率。
本发明的另一方面提供了一种制造喷墨打印头的方法,所述喷墨打印头拥有紧凑的结构和增强的刚性。
根据本发明的方面,提供了一种制造喷墨打印头的方法,包括:在具有(110)晶面取向(晶格面)的硅晶片基板的前表面形成沟槽;以及通过湿法蚀刻,从基板后表面到所述沟槽,形成供墨通道。
根据本发明的方面,所述沟槽可以通过干法蚀刻形成,且当从基板的前表面看时沟槽的形状可以是矩形。
根据本发明的方面,所述供墨通道具有相对于基板的前表面和/或后表面垂直延伸的壁。
根据本发明的方面,所述湿法蚀刻使用的蚀刻溶液包括从KOH、NaOH、TMAH及其混合物所组成的组中选择出的材料。
根据本发明的又一方面,提供了一种制造喷墨打印头的方法,包括:在具有(110)晶面取向的单晶硅基板的前表面形成加热墨水的加热器;形成与加热器相邻的沟槽;在基板的前表面上形成限定墨水通路的流动通道层;在流动通道层上形成具有喷嘴的喷嘴层;以及通过各向异性湿法蚀刻,从基板后表面到所述沟槽形成供墨通道。
根据本发明的方面,所述供墨通道具有与所述基板的后表面和/或前表面基本上垂直的壁。
本发明的其他方面和优点将部分在随后的描述中阐明,并部分地通过该描述而明显,或可通过实践本发明而得知。
附图说明
通过下面结合附图对实施例的描述,本发明的以上和/或其他方面和优点将变得更明显且更易于理解,其中:
图1是表示相关技术中喷墨打印头的截面图;
图2是根据本发明所述方法制造的喷墨打印头的平面图;
图3是表示沿图2中的I-I线的截面图;
图4a-4i是用于解释根据本发明制造喷墨打印头的示范性方法的示意图。
具体实施方法
现在将更详细地参照本发明的示范性实施例,在附图中表示了本发明的实例,且全文相同的标号代表相同的元件。以下参照附图描述这些实施例以说明本发明。
图2是根据本发明的方法制造的喷墨打印头200的平面图,并且图3是沿图2中的I-I线的截面图。如图2和3所示,喷墨打印头200包括基板10,布置在基板10上的流动通道层20和布置在流动通道层20上的喷嘴层30。
基板10形成有供墨通道40以供墨。供墨通道40通过湿法蚀刻形成,并沿着喷墨打印头200的纵向延伸。基本上与基板10的后表面10b和/或前表面10a相垂直地形成供墨通道40的内壁41。如果基本上与前表面10a和/或后表面10b相垂直形成供墨通道40,那么供墨通道40占用最小量的基板10的后表面10b。
流动通道层20限定了墨水通路21,该墨水通路21将供墨通道40连接到喷嘴31。每个墨水通路21都包含其中填充墨水的墨腔21a和将供墨通道40连接到墨腔21a的限流器21b。喷嘴层30包含喷嘴31,墨水通过喷嘴31从墨腔21a中喷出。
基板10的前表面10a包括在喷墨打印头200的纵向上延伸的沟槽50(通道)。所述沟槽50与贯穿基板10的供墨通道40相连通。因此,由供墨通道40供应的墨水经由沟槽50流入到墨水通路21中。加热器11设置在沟槽50的两侧,以加热墨腔21a中的墨水。电极12邻近加热器11,以对加热器11提供电流。
图4a-4i是用于解释根据本发明制造喷墨打印头200的示范性方法的示意图。如图4a所示,提供了基板10。基板10是具有(110)晶面取向的单晶硅晶片(在下文中,称为“(110)晶片”)。供墨通道40(见图3)形成在基板10内,使得通道40的壁41基本上与基板10的后表面10b和/或前表面10a相垂直。供墨通道40可以通过蚀刻例如各向异性湿法蚀刻形成。蚀刻工艺根据(110)晶片的晶体结构(取向)改变。(110)晶片从基板10的后表面10b向前表面10a进行蚀刻。根据基板10的晶面取向,与蚀刻溶液相接触的表面有着不同的蚀刻速度。
如图4b所示,加热器11和电极12设置在基板10的前表面10a上。加热器11可以通过在基板10上沉积耐热材料来形成,例如钽氮化物或钽-铝合金。加热器11可以通过图案化的溅射或化学气相沉积来沉积。电极12可以通过图案化的溅射来沉积具有足够导电性的金属材料例如铝而形成。可以在加热器11和电极12上提供保护层(未示出),例如,氧化硅膜或氮化硅膜。
如图2和4c所示,沟槽50形成于基板10的前表面10a上。由于(110)晶片基板10的蚀刻特征,如果基板10使用矩形蚀刻掩模通过各向异性湿法蚀刻来蚀刻,那么供墨通道40纵向的两个末端都形成如图2所示的“A”部分。详细地,供墨通道40纵向上的第一末端通过蚀刻表面42和43形成,所述蚀刻表面42和43分别与垂直壁41相交成角α和角β。供墨通道40纵向上的第二末端通过蚀刻表面44和45形成,所述蚀刻表面44和45分别与垂直壁41相交成角β和角α。
蚀刻表面42和蚀刻表面43之间形成的边缘部分46与蚀刻表面44和蚀刻表面45之间形成的边缘部分47都相对易于受到喷墨打印头200内残余应力的影响,或受到施加在喷墨打印头200上的外力的影响。因此,沟槽50的横截面通常形成为矩形,以便减轻集中在边缘部分46和47上的负荷。沟槽50可以包括唇状结构,以使得在基板10前表面10a处的供墨通道40变窄(参见图3)。沟槽50可以通过干法蚀刻形成,例如使用等离子体的反应离子蚀刻(RIE),或通过工具切割,或通过喷砂法。
如图4d所示,流动通道层20形成在提供了加热器11和电极12的基板10上。流动通道层20可以通过光刻工艺形成。尽管图中未示出,但所述工艺包括通过旋涂法在基板10上涂布负性光致抗蚀剂层的操作,以及使用包含墨腔图案和限流器图案的光掩模对光致抗蚀剂层曝光的操作。如图4d所示,光致抗蚀剂层被显影以选择性地移除未曝光的光致抗蚀剂,以形成限定墨水通路20a的流动通道层20。
如图4e所示,形成牺牲层60以覆盖基板10的前表面10a和流动通道层20。所述牺牲层60可以例如通过旋涂法,通过涂覆正性光致抗蚀剂的方法来形成。由于蚀刻基板以形成供墨通道40时,牺牲层60暴露于蚀刻溶液,所以牺牲层60通常采用对蚀刻溶液具有高抵抗性的材料制成。
如图4f所示,牺牲层60的上表面与流动通道层20的上表面被平坦化至相同高度。所述平坦化可以通过化学机械抛光(CMP)工艺来实现,或采用类似的方法。
如图4g所示,喷嘴层30形成于平坦化的牺牲层60和流动通道层20之上。喷嘴层30通过光刻工艺而形成,类似于流动通道层20。换句话说,在光致抗蚀剂涂覆到流动通道层20上之后,光致抗蚀剂通过有喷嘴图案的光掩膜被曝光,并被显影以选择地移除其中未曝光的部分。如此形成具有喷嘴31的喷嘴层30,如图4g所示。由于形成于流动通道层20上的喷嘴层30可以被流动通道层20紧密接触,所以打印头的耐久力因此增加,并且墨水通路的形状和尺寸也被精确控制,因而提高了打印头的墨水喷射性能。
如图4h所示,蚀刻掩模70提供于基板10的后表面10b上,以形成供墨通道40(见图3)。所述蚀刻掩模70可以通过在基板10的后表面10b上涂覆正性或负性光致抗蚀剂并对其图案化来获得。
在形成蚀刻掩模70之后,图4h中所示的工作件210被浸入到蚀刻溶液中,从而蚀刻基板10的后表面10b由蚀刻掩模70暴露的地方。如图4i所示,进行所述蚀刻操作直到暴露沟槽50,以形成供墨通道40。由于(110)晶片基板10的蚀刻特性,在供墨通道40纵向上的壁41垂直地形成。氢氧化钾(KOH)、氢氧化钠(NaOH)或者四甲基氢氧化铵(TMAH)都可以作为蚀刻溶液来使用。
移除如图4i所示的蚀刻掩模70和牺牲层60,以形成如图3所示出的喷墨打印头200。
从上述描述中显然可以看出,根据本发明所述制造方法,由于在供墨通道纵向上的壁可以通过湿法蚀刻而垂直地形成,从而可以高生产率地生产具有增强的刚性的紧凑型喷墨打印头。
尽管已经示出和描述了本发明的一些实施例,但本领域技术人员将会理解到,在这些实施例内可以作出改变,而没有背离本发明的原则和精神,本发明的范围限定在权利要求及其等同物中。

Claims (13)

1、一种制造喷墨打印头的方法,包括:
准备具有(110)晶面取向的硅晶片作为基板;
在所述基板的前表面上形成沟槽;以及
从所述基板的后表面到所述沟槽,湿法蚀刻供墨通道。
2、如权利要求1所述的方法,其中所述沟槽的形成包括干法蚀刻所述基板的前表面。
3、如权利要求1所述的方法,其中所述沟槽具有基本上矩形的横截面。
4、如权利要求1所述的方法,其中所述供墨通道具有基本上垂直于所述基板的前表面和后表面延伸的壁。
5、如权利要求1所述的方法,其中所述供墨通道的湿法蚀刻包括使用蚀刻溶液,所述蚀刻溶液包括从KOH、NaOH、TMAH及其混合物所组成的组中选择出的材料。
6、一种制造喷墨打印头的方法,包括:
准备具有(110)晶面取向的硅晶片作为基板;
在所述基板的前表面上形成加热墨水的加热器;
在所述基板的前表面上形成与所述加热器相邻的沟槽;
在所述基板的前表面上形成具有墨水通路的流动通道层;
在所述流动通道层上形成具有喷嘴的喷嘴层;以及
从所述基板后表面到所述沟槽,各向异性湿法蚀刻供墨通道。
7、如权利要求6所述的方法,其中所述供墨通道具有基本上垂直于所述基板的前表面和后表面延伸的壁。
8、如权利要求6所述的方法,其中所述沟槽具有基本上矩形的横截面。
9、如权利要求6所述的方法,其中所述沟槽的形成包括干法蚀刻所述基板的前表面。
10、如权利要求6所述的方法,其中所述沟槽的形成包括对所述基板的前表面进行反应离子蚀刻、工具切割、或喷砂。
11、如权利要求1所述的方法,其中所述沟槽的宽度窄于所述供墨通道相应的宽度。
12、如权利要求1所述的方法,其中所述湿法蚀刻包括蚀刻所述供墨通道,使得所述沟槽限制来自所述供墨通道的墨水流动。
13、如权利要求1所述的方法,其中所述基板是单晶硅基板。
CNA2007101691666A 2007-03-22 2007-12-28 制造喷墨打印头的方法 Pending CN101269576A (zh)

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