CN101262119B - Method for manufacturing a semiconductor laser - Google Patents
Method for manufacturing a semiconductor laser Download PDFInfo
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- CN101262119B CN101262119B CN 200810096314 CN200810096314A CN101262119B CN 101262119 B CN101262119 B CN 101262119B CN 200810096314 CN200810096314 CN 200810096314 CN 200810096314 A CN200810096314 A CN 200810096314A CN 101262119 B CN101262119 B CN 101262119B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 33
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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Abstract
A method of manufacturing semiconductor laser device including a GaN wafer includes forming a semiconductor layer on the GaN wafer and on which ridge portions are formed. Grooves are formed in the semiconductor layer such that each groove is disposed in line with the scribe marks, between each of the ridge portions and an upstream scribe mark. The grooves are curved and convex outwardly towards adownstream side, and each groove has an apex on a cleavage line. The side extending from the apex preferably does not form an angle of 60 degrees with respect to a cleavage direction or the cleavage line.
Description
Technical field
The present invention relates to the manufacture method of semiconductor laser.
Background technology
In the manufacturing process of semiconductor laser, with marking wafer is carried out mark, wafer is rived be divided into a plurality of by applying suitable power.But,,, process so be difficult to utilize rive because GaN has high stability for the wafer that constitutes by GaN.
At this problem, put down in writing in the patent documentation 1 and formed the auxiliary area layer of riving, and the method for riving along the cut channel of this layer.In addition, in patent documentation 2, put down in writing, consistent and form from the end of wafer leading groove that central portion extends and the secondary guide groove narrower with the central shaft of the two than leading well width with continuum of states, and the method for the wafer of on the bearing of trend of these grooves, riving.
[patent documentation 1] spy opens flat 10-242570 communique
[patent documentation 2] spy opens the 2002-64237 communique
Summary of the invention
[problem that invention will solve]
But, in the method for patent documentation 1,, need make the operation of the regulation zone regrowth of semiconductor layer in order to form the auxiliary area layer of riving.In addition, because the crystalline texture of GaN is hexagonal crystal system, so on the direction that becomes 60 degree angles with the direction that will rive, rive easily.Therefore, as described in patent documentation 2, the method that guide groove only is set in the end is difficult to rive on desired position accurately.
On the other hand, for the GaN wafer, marking is set also in the end of wafer but also in semiconductor wafer unit not only.But, the offset of marking is set, thereby when on the bearing of trend of a relative marking, not having another marking, after riving, can on splitting surface, produces the step discrepancy in elevation.This step discrepancy in elevation is formed near the central authorities of above-mentioned two markings easily, particularly is formed on easily in the spine of the easy semiconductor laser of concentrating of stress.Because in spine, there is light-emitting zone, so I'm afraid that the characteristic of semiconductor laser can reduce when having formed such step discrepancy in elevation.
Figure 12 is near the profile schema diagram the spine that has formed under the step discrepancy in elevation situation.In spine 101, find the striated that produces owing to the step discrepancy in elevation defective 102.As shown in the drawing, defective 102 when being arranged in the propagation portion 103 that penetrates light, characteristic that can the correlation bright dipping produces bad influence.
The present invention finishes in view of such problem.That is the manufacture method that, the purpose of this invention is to provide a kind of semiconductor laser of the wafer of can on the position of expectation, riving.
In addition, the object of the present invention is to provide a kind of manufacture method that can suppress to produce the semiconductor laser of the step discrepancy in elevation owing to riving.
Other purpose of the present invention and advantage will be apparent from following record.
[means of dealing with problems]
A first aspect of the present invention is a kind of manufacture method of semiconductor laser, comprising:
On the GaN substrate, form the semiconductor layer be provided with a plurality of spines operation,
From the side of described semiconductor layer on described GaN substrate across the interval of regulation be provided with a plurality of cut channels (キ ズ) operation and
Along the rive operation of described GaN substrate of described cut channel,
It is characterized in that:
Before the described operation of riving, between each described a plurality of spines and described a plurality of cut channel, be provided with and described a plurality of cut channels at least one groove on same straight line on the described semiconductor layer.
The 2nd aspect of the present invention is a kind of manufacture method of semiconductor laser, comprising:
On the GaN substrate, form the semiconductor layer be provided with a plurality of spines operation,
From the side of described semiconductor layer on described GaN substrate across the interval of regulation be provided with a plurality of cut channels operation and
Along the rive operation of described GaN substrate of described cut channel,
It is characterized in that:
Before the described operation of riving, with described a plurality of cut channels the 1st groove and the 2nd groove are being set on same straight line on the described semiconductor layer,
Described the 1st groove is positioned at the downstream side of the direction of riving with respect to described cut channel between described spine and described cut channel,
Described the 2nd groove is positioned at the downstream side of the direction of riving with respect to described spine between described spine and described cut channel,
Described the 1st groove is the shape that the downstream side end of direction protrudes laterally of riving, and the summit of this shape is positioned on the line that will rive, and the outline line that extends from this summit is not parallel with the directions that become 60 degree with the direction of riving simultaneously,
Described the 2nd groove sees it is quadrangle, triangle or circle in the plane, and outline line is not parallel with the direction that becomes 60 degree with the direction of riving.
The 3rd aspect of the present invention is a kind of manufacture method of semiconductor laser, and this semiconductor laser has spine, the platform part highly identical with this spine and the groove highly lower than this spine that forms between this spine and this platform part on the wafer,
It is characterized in that:
This method comprises:
On this wafer, form the p type coating of first thickness operation,
The part that becomes this groove and than this platform part away from the established part on the line of riving of this spine on, to this p type coating carry out etching and become the operation of second thickness,
On this rives line than this established part away from form in the part of this spine as the operation of the marking of cut channel and
From the sharp-pointed part of this marking by this established part, the operation of riving along this line of riving towards the direction of this spine,
Form this marking so that the front end of this sharp-pointed portion is arranged on this line of riving and with this established part contacts.
[invention effect]
According to the 1st aspect of the present invention, because on same straight line, be provided with at least one groove with a plurality of cut channels between each spine and the cut channel, so the wafer of can on the position of expectation, riving.
According to the 2nd aspect of the present invention, because be provided with and 1st groove and 2nd groove of a plurality of cut channels on same straight line, so the wafer of can on the position of expectation, riving.In addition, can suppress to produce the step discrepancy in elevation owing to riving.
Description of drawings
[Fig. 1] (a)～(e) is the figure of a part of the manufacturing process of explanation semiconductor device.
[Fig. 2] is the oblique view that forms the state of a plurality of semiconductor laser components in the execution mode 1 on the GaN wafer (a), (b) is the amplification view of the regional A shown in (a).
[Fig. 3] (a)～(c) is the variation of groove in the execution mode 1.
[Fig. 4] is the oblique view of the bar that the GaN wafer obtains of riving in the execution mode 1.
[Fig. 5] is the oblique view of the semiconductor laser chip that dividing strip obtains in the execution mode 1 (a), (b) is near the enlarged drawing of spine of (a).
[Fig. 6] (a)～(d) is the example of formation method of the groove of execution mode 1.
[Fig. 7] (a)～(e) is the example of formation method of the groove of execution mode 1.
[Fig. 8] (a)～(d) is the example of formation method of the groove of execution mode 1.
[Fig. 9] is a part of amplification view of the semiconductor laser component before riving in the execution mode 2.
[Figure 10] is the oblique view that bar that the GaN wafer to the Fig. 9 that rives obtains is further cut apart the semiconductor laser chip that obtains.
[Figure 11] is the amplification view of the part of the semiconductor laser component before riving in the execution mode 3.
[Figure 12] is near the profile schema diagram the spine that has formed under the situation of the step discrepancy in elevation.
[Figure 13] is the flow chart of manufacture method of the semiconductor laser of explanation execution mode 4.
[Figure 14] is the figure of the wafer cross after explanation p type coating forms.
[Figure 15] is the figure of the wafer cross behind the explanation etching work procedure.
[Figure 16] (A), (B) be the figure of the wafer cross of explanation marking after forming.
(C) be the figure of the shape of explanation marking.
[Figure 17] (A), (B) be the figure of manufacture method of the semiconductor laser of explanation comparative example.
[Figure 18] (A), (B) be the figure that explanation comprises the wafer in high dislocation zone.
[Figure 19] (A), (B) be the figure of the structure before explanation does not have the semiconductor laser of platform to rive.
[Figure 20] is the figure that a distortion example of execution mode 4 is shown.
[Figure 21] is the figure that a distortion example of execution mode 4 is shown.
[Figure 22] is the figure that a distortion example of execution mode 4 is shown.
Symbol description
11 GaN wafers
12,61,71 electrodes
13,62,72 spines
14 resonator directions
15,66,76 directions of riving
16,64,74 markings
18,63,73 high dislocation zones
19,67 grooves
17,65,75 dielectric films
77 the 1st grooves
78 the 2nd grooves
200 ridges
201 lines of riving
202 platforms
204 markings
Embodiment
Fig. 1 (a) is the flow chart of a part that the manufacturing process of semiconductor device is shown.
In Fig. 1 (a), at first prepare on the GaN wafer, to have formed the wafer (step 1) of a plurality of semiconductor laser components.Next, shown in Fig. 1 (b), the GaN wafer of riving is divided into a plurality of 1 (step 2).Next, cover the end face (step 3) of riving with diaphragm.Under this situation, also can make diaphragm have the function of control reflectivity.For example, the front end face that can make the light emitting side is the diaphragm of antiradar reflectivity, and rear end face is the diaphragm of high reflectance.Then, shown in Fig. 1 (c), further dividing strip becomes a plurality of semiconductor laser chip 2 (step 4).
Next, semiconductor laser chip is assemblied on the pedestal assembles (step 5).For example, shown in Fig. 1 (d), assemble semiconductor laser chips 2 by auxiliary stand 5 in the chip department of assembly 4 that extends out from pedestal 3.Through electrode lead-in wire 6 in pedestal 3, contact conductor 6 and semiconductor laser chip 2 are electrically connected by gold thread 7.
Next, shown in Fig. 1 (e), in pedestal 3 and cover 7 closed containers that are adjacent to, enclose semiconductor laser chip (step 6).Top at cover 7 is provided with window portion 8, and the light that penetrating window portion 8 comes from semiconductor laser chip can inject to the outside.
To offer test (step 7) such as electrical characteristics through the semiconductor laser component that above operation obtains.
Fig. 2 (a) is the oblique view that forms the state of a plurality of semiconductor laser components on the GaN wafer, and is corresponding with the state of the step 1 of Fig. 1.In addition, Fig. 2 (b) is the amplification view of the regional A shown in Fig. 2 (a).
In Fig. 2 (a), a plurality of semiconductor laser components are set on GaN wafer 11.Symbol 12 is electrodes of each semiconductor laser component, and symbol 13 is spines, and symbol 17 is dielectric films.In addition, arrow 14 expression resonator directions, arrow 15 represents to rive direction.
In Fig. 2 (a), a plurality of markings 16 are set on the direction of riving.Marking 16 is the cut channels among the present invention.It can be from the side of semiconductor layer, and promptly the upside of Fig. 2 (a) applies cut channel across the interval of regulation with cutter and forms on GaN wafer 11.But, being not limited to this, also can form by irradiating electron beam or laser beam.
In general, on the GaN wafer, there are smaller infraversion malposition zone of perforation dislocation density and perforation dislocation density height dislocation greatly zone.High dislocation zone be above wafer or below when seeing, the obvious zone different with other region contrast, observing it is the line shape zone of width from a few μ m to tens μ m.
In Fig. 2 (b), represent high dislocation zone with symbol 18.The marking that is used for riving is arranged at these high dislocation zones.In the present embodiment, though can be not limited to this, also can in the height dislocation zone 18 of regulation, be provided with all in the high dislocation regional 18 marking 16 being set.For example, also can to several high dislocation zone 18 marking be set every one.And, in the example of Fig. 2 (a) and Fig. 2 (b),, be not limited to this though between each high dislocation zone 18, a row semiconductor laser component is set, also can stride across multiple row semiconductor laser component is set.
In the present embodiment, it is characterized in that: be provided with and a plurality of grooves 19 of marking 16 on same straight line.Groove 19 preferably is arranged on the downstream side of the direction of riving with respect to marking 16 between marking 16 and spine 13.And, in the manufacturing process of semiconductor laser, can after forming groove 19, marking 16 be set.In addition, in the example of Fig. 2 (a) and Fig. 2 (b),, be not limited to this, also can be provided with a plurality of though the quantity of groove is 1.
The shape of groove 19 is preferably formed to protruding laterally the downstream side end of the direction of riving.For example, shown in Fig. 2 (b), can form the shape of triangularity when observing in the plane.Under this situation, vertex of a triangle is positioned on the line that will rive (below be called the line of riving).But, are directions that GaN rives easily because become the direction of 60 degree, so can not make each limit of extending parallel with this direction from the summit that is positioned on the line of riving with the direction of riving.
In addition, the shape of groove can also become the shape as shown in Fig. 3 (a)～(c).These shapes are variation of the shape of Fig. 2 (b).Though it is subtriangular shape that any shape is seen in the plane, profile all forms avoids causing easily the direction of riving.At length, the outline line that extends from the summit that is positioned on the line of riving forms not parallel with the direction that becomes 60 degree with the direction of riving.Particularly, Fig. 3 (a) uses the curve that protrudes laterally to replace each limit of extending from the summit that is positioned on the line of riving in the triangle of Fig. 2 (b).In addition, Fig. 3 (b) replaces above-mentioned each limit with the curve that protrudes to the inside.And Fig. 3 (c) uses the shape of protruding to the inside that be made of many straight lines, whole to replace above-mentioned each limit.
Fig. 4 is the oblique view of the bar that the GaN wafer obtains of riving.In addition, Fig. 5 (a) is an oblique view of bar being cut apart the semiconductor laser chip that obtains.Fig. 5 (b) is near the enlarged drawing of spine of Fig. 5 (a).When riving,, just can on the direction of expectation, not rive sometimes if on the direction of advancing of riving, there is stress to concentrate.At this moment, when on the direction of expectation, not riving wafer, can give and bring deviation, probably can reduce the characteristic of laser to the distance of electrode from the end face of semiconductor laser chip.But, if the groove of present embodiment is set at the downstream side of the direction of advance of riving with respect to marking, then can rive along the line of riving of expectation, can access the semiconductor laser component that has as the splitting surface of Fig. 4 and Fig. 5 (a) and (b) because can relax stress.
Preferably in the scope of 50 μ m, groove 19 is being set at a distance of 10 μ m along the center of direction 15 of riving with spine 13.With the center of spine 13 at a distance of than the near place of 10 μ m, so since be positioned at probably can be bad near the luminous point to luminous generation influence.On the other hand, with the center of spine 13 at a distance of than 50 μ m place far away, effect of the present invention diminishes, thereby probably can rive with the line of riving with departing from.
Next, an example of the formation method of groove is described with reference to Fig. 6 (a)～(d).
At first, on the surface of GaN wafer 21, form n type coating 22, active layer 23, p type coating 24 and p type contact layer 25 (Fig. 6 (a)).Next, adopt photoetching process that p type contact layer 25 and p type coating 24 are implemented etching, form spine 26 and groove 27 (Fig. 6 (b)).Dielectric film 28 (Fig. 6 (c)) is all formed at the top except spine 26 then.Afterwards in spine 26 and the inside of GaN wafer 21 form electrode 29,30 (Fig. 6 (d)) respectively.Obtain semiconductor laser component thus according to present embodiment.
According to the method shown in Fig. 6 (a)～(d), because in same operation, form groove 27 and spine 26, so obtained to increase the advantage of total process number.
Next, other example of the method that forms groove is described with reference to Fig. 7 (a)～(e).
At first, on the surface of GaN wafer 31, form n type coating 32, active layer 33, p type coating 34 and p type contact layer 35 (Fig. 7 (a)).Next, adopt photoetching process that p type contact layer 35 and p type coating 34 are implemented etching, form spine 36 and groove 37 (Fig. 7 (b)).Next, utilize mask 38 further only groove 37 to be carried out etching (Fig. 7 (c)).Then, after removing unwanted mask 38, except dielectric film 39 (Fig. 7 (d)) is all formed at the top of spine 36.Afterwards in spine 36 and the inside of GaN wafer 31 form electrode 40,41 (Fig. 7 (e)) respectively.
According to the method shown in Fig. 6 (a)～(d), groove 27 is identical with spine 26 degree of depth.Relative therewith, according to the method shown in Fig. 7 (a)～(e), because form groove 37 and spine 36, so the degree of depth of groove 37 can be darker than spine 36 by different operations.Thereby easier the expectation direction on wafer is rived.
Also can pass through the method shown in Fig. 8 (a)～(d) further and form groove.
At first, on the surface of GaN wafer 42, form n type coating 43, active layer 44, p type coating 45 and p type contact layer 46 (Fig. 8 (a)).Next, adopt photoetching process that p type contact layer 46 and p type coating 45 are implemented etching, form spine 47 (Fig. 8 (b)).Then, on the established part of p type contact layer 46 and p type coating 45, form dielectric film 48.Next, adopt photoetching process etching dielectric film 48 and form groove 49 (Fig. 8 (c)).And, when forming dielectric film 48, do not comprise the part that forms groove 49 in the described established part by making, can when forming dielectric film 48, form groove 49.For example, pile up dielectric film 48 according on the part that will form groove 49, mask being set.Remove mask afterwards and just can form groove 49.Then, after having formed dielectric film 48 and groove 49, the inside with GaN wafer 42 in spine 47 forms electrode 50,51 (Fig. 8 (d)) respectively.
In said method, for example can adopt and contain at least a oxide from the group of Si, Ti, V, Zr, Nb, Hf and Ta, selected as dielectric film 48.In addition, also can adopt SiN, BN, AlN or SiC etc. as dielectric film 48.
As mentioned above, according to present embodiment, because use marking and groove to rive simultaneously, so compare the GaN wafer of on the position of regulation, riving easily with the situation that marking only is set.
Fig. 9 is the amplification view of the part of the semiconductor laser component before riving.And in wafer, adopt GaN.
In Fig. 9, symbol 61 is electrodes of semiconductor laser component, and symbol 62 is spines, and symbol 63 is high dislocation zones, and symbol 64 is markings, and symbol 65 is dielectric films.In addition, arrow 66 represents to rive direction.Marking 64 can apply cut channel with cutter and form, and still, is not limited to this, also can form by irradiating electron beam or laser beam.
In the present embodiment, it is characterized in that: a plurality of grooves 67 are set along the direction 66 of riving.Groove 67 can be arranged on the upstream side of the direction 66 of riving and in the downstream side any one with respect to spine 62 between marking 64 and spine 62.But, must be arranged on respect to spine 62 on the downstream side of the direction 66 of riving.And, though in the example of Fig. 9,1 groove respectively is set, be not limited to this in the both sides of spine, also can on both sides, a plurality of grooves be set each side.In addition, be provided with under the situation of groove, also can only a plurality of grooves be set in a side at downstream side only in spine.
Because as long as the shape of groove 67 can relax the stress when riving, so see polygonal or circles such as to become quadrangle, triangle in the plane.But, are directions that GaN rives easily because become the direction of 60 degree, so will avoid outline line to become and this direction parallel in shape with the direction of riving.
Figure 10 is the oblique view that bar that the GaN wafer to the Fig. 9 that rives obtains is further cut apart the semiconductor laser chip that obtains.When riving, concentrate and make to cut apart and go at the little local stress of the energy of riving.At this moment, between the crystallization direction of wafer and the direction that will rive deviation is arranged, perhaps there is problem the shape of marking and position, perhaps each marking not side by side point-blank the time, riving after on splitting surface the generation step discrepancy in elevation.But,,, can alleviate near generation step discrepancy in elevation illuminating part by groove is set according to present embodiment.Thereby can access the semiconductor laser component that has as the splitting surface of Figure 10.
Figure 11 is the amplification view of the part of the semiconductor laser component before riving.And in wafer, adopt GaN.
In Figure 11, symbol 71 is electrodes of semiconductor laser component, and symbol 72 is spines, and symbol 73 is high dislocation zones, and symbol 74 is markings, and symbol 75 is dielectric films.In addition, arrow 76 represents to rive direction.Marking 74 can apply cut channel with cutter and form, and still, is not limited to this, also can form by irradiating electron beam or laser beam.
In the present embodiment, it is characterized in that: the 1st groove 77 and the 2nd groove 78 are set along the direction 76 of riving.Wherein, the 1st groove 77 is corresponding with the groove 19 (Fig. 2 (b)) of execution mode 1.On the other hand, the 2nd groove 78 is corresponding with the groove 67 (Fig. 9) of execution mode 2.
The 1st groove 77 is arranged on the downstream side of the direction 76 of riving with respect to marking 74 between marking 74 and spine 72.And, though the quantity of the 1st groove 77 is 1 in the example of Figure 11, be not limited to this, also can be provided with a plurality of.
Protrude laterally the downstream side end that is shaped as the direction of riving of the 1st groove 77.For example, as shown in figure 11, seeing in the plane can triangularity.Under this situation, vertex of a triangle is positioned on the line of riving.But, are directions that GaN rives easily because become the direction of 60 degree, so can not make each limit of extending parallel with this direction from the summit that is positioned on the line of riving with the direction of riving.And the shape of the 1st groove 77 also can become the shape shown in the Fig. 3 (a)～(c) that illustrates in execution mode 1.
The 2nd groove 78 is arranged on the downstream side of the direction of riving with respect to spine 72 between marking 74 and spine 72.And though in the example of Fig. 9, the quantity of the 2nd groove 78 is 1, is not limited to this, also can be provided with a plurality of.
The shape of the 2nd groove 78 is seen in the plane and can be become quadrangle, triangle or circle.But, are directions that GaN rives easily because become the direction of 60 degree, so will avoid outline line to become and this direction parallel in shape with the direction of riving.
The 1st groove 77 can form by the method identical with the groove of explanation in execution mode 1.Under this situation, also can form by any one method among Fig. 6～Fig. 8.On the other hand, the 2nd groove 78 also can similarly form.
When riving, the little local stress of the energy of riving is concentrated and is made to cut apart and go on.At this moment, when on the direction of expectation, not riving wafer, can give and bring deviation, probably can reduce the characteristic of laser to the distance of electrode from the end face of semiconductor laser chip.But,, can rive along the line of riving of expectation by at the downstream side of the direction of advance of riving the 1st groove 77 being set with respect to marking 74.On the other hand, by at the downstream side of the direction of advance of riving the 2nd groove 78 being set, can alleviate near generation step discrepancy in elevation illuminating part with respect to spine 72.Like this,,, can rive, can also prevent near illuminating part, to produce defective simultaneously owing to riving with high precision by the 1st groove and the 2nd groove also are set except marking according to present embodiment.
Present embodiment relates to the manufacture method that produces the semiconductor laser of the step discrepancy in elevation on spine after being suppressed at wafer and riving by the layer structure optimization with the front position of marking etc. and near the splitting surface it.Below along the manufacture method of the semiconductor laser of the flowchart text present embodiment shown in Figure 13.At first, on the surface of the single-crystal wafer that has formed n type coating, active layer, form p type coating (step 120).Wafer cross after step 120 shown in Figure 14 is handled.That is, on the upper strata of single-crystal wafer 136, form n type coating 134, on the upper strata of n type coating 134, form active layer 132, on the upper strata of active layer 132, form p type coating 130.And the thickness of the p type coating after step 120 processing is T1.Wherein, consider the characteristic of semiconductor laser, thickness T1 is defined as becoming the necessary thickness of spine.
Next, the composition of stipulating by photoetching process on the p type coating that in step 120, forms.Then to not carried out etching (step 122) by the opening portion that resist covered.The p type coating that this etching will have been removed the part of the spine that become semiconductor laser and platform part etches into prescribed depth.Wherein, platform is in order to protect spine etc. and have part with spine's equal height.
Shown in Figure 15ly carried out the cross-section structure after the etching by step 122.As shown in figure 15, in step 122, form ridge 200, platform 202, abut ridge 206 etc.That is, because the I of spine, platform part III, not etched in the etching work procedure of step 122 in abutting connection with the V of spine, so the thickness of p type coating still is T1.On the other hand, groove II, etched in step 122 as the p type coating of the marking formation IV of portion of the part of formation marking in operation described later, its thickness becomes T2.T2 is 0.06 μ m in the present embodiment.
The processing of step 122 proceeds to the processing of step 124 when finishing.In step 124, in the marking formation IV of portion, form marking.The marking of present embodiment is the cut channel that should become the starting point of riving when riving wafer.This marking can apply cut channel with cutter and form, and still, is not limited to this, also can form by irradiating electron beam or laser beam.Forming the wafer cross behind the marking by step 124 shown in Figure 16 A.Also at the plane graph of Figure 16 A shown in Figure 16 B.Wherein, the dotted line among Figure 16 B is the line 201 of riving, and rives on the direction of arrow of line 201 in same figure of riving along this in the operation of riving described later.
The marking 204 of present embodiment is to be the del shape of narrowed width on depth direction among Figure 16 A at profile.On the other hand, be to be that 2 summits are arranged on the diamond shape on the line 201 of riving among Figure 16 B at plane graph.As from grasping Figure 16 B, marking 204 has sharp-pointed portion (aforesaid diamond-shaped portion branch comprises the part on summit).Wherein, at the enlarged drawing of marking 204 shown in Figure 16 C.Marking is to comprise aforesaid sharp-pointed portion 209 and non-sharp-pointed portion 211, the cut channel that the two forms.In addition, sharp-pointed portion 209 comprises the summit that is arranged on the line 201 of riving, and this summit is positioned at the downstream side of the travel direction of riving.
And marking 204 is formed on the direction opposite with the I of spine along the border of rive line 201 and platform part III and the marking formation IV of portion the only zone of distance L 1, the front end of sharp-pointed portion is set.The distance L 1 of present embodiment is 1 μ m, but so long as 1 μ m is above with regard to there is no particular limitation.Wherein, will with the described border marking 204 that only distance L1 place is provided with in, the front end that sharp-pointed portion 209 rives on the line is called " side of riving front end ".The side of riving front end is from that near summit of ridge 200 in 2 marking summits that are provided with on the line 201 of riving.So distance L 1 can show as " from the border of platform part III and the marking formation IV of portion to the distance of the side front end of riving ".
In addition, the oblique line among Figure 16 B partly is illustrated in the etched zone of p type coating in the step 120.As from can grasping Figure 16 B, the width in this etched zone is L2, is arranged to band shape.L2 in the present embodiment is 1 μ m, but so long as 1 μ m is above with regard to there is no particular limitation.
The processing of step 124 proceeds to the processing of step 126 when finishing.Step 124 is to rive wafer to expose the operation of semiconductor laser end face along the aforesaid line 201 of riving.In step 124, apply power by the inside from marking 204, rive with marking 204 direction that to be starting point represent with arrow in Figure 16 B.Expose from the teeth outwards when step 126 finishes and penetrate or catoptrical laser end face.
Explanation here is used for understanding the comparative example of meaning of the present invention.The manufacture method of the semiconductor laser in the comparative example is described with profile 17A and its plane graph 17B.Figure 17 A and Figure 17 B are the structures before riving.In the manufacture method of the semiconductor laser in the comparative example, forming n type coating 239 on the single-crystal wafer 240, on the wafer that has formed active layer 238 on the n type coating 239, forming p type coating.Wherein the thickness of the p type coating of Xing Chenging is h1.Next, be etched with formation raceway groove 243.Carry out this etching so that the residual film of p type coating in the raceway groove 243 becomes the h2 thinner than h1.Wherein, residual film h2 is defined as protecting active layer 238 grades and can make the optimized value of laser characteristic.The thickness that forms p type coating when carrying out etching like this is the ridge 242 of h1, the raceway groove 243 that thickness is h2, the platform 244 that thickness is h1.In addition, as putting down in writing among Figure 17 A, with platform 244 and raceway groove 243 away from direction on form the ridge 241 that form the chip different etc. with ridge 242.
Next, form marking 230.The marking 230 of comparative example as from Figure 17 A as can be known, be formed on that not carry out aforementioned etched part be on the platform 244.Thereby the side front end of riving of marking (the said here side front end of riving refers in the rhombus marking of seeing on plane graph 230, is arranged on that summit of close ridge 242 in 2 summits on the line a-b that rives) is arranged on the platform 244.And, in comparative example, marking 230 is set to from the aforesaid side front end of riving along the line a-b that rives, and only exist platform 244 on ridge 242 directions at a distance of a distance.That is, from comparative example rive the side front end on the direction of the ridge 242 of the line a-b that rives, through certain distance, the zone of p type coating thick (h1) broadens.In addition, hereinafter will be called " dislocation associated region " with the zone of a regulation area of this side front end of riving line parallel direction of riving that to be starting point extend towards the direction of the ridge that should rive from the side front end of riving.Dislocation associated region and the preceding end in contact of the side of riving.
Then, when having finished the structure of the comparative example shown in Figure 17 A, the 17B, rive to expose end face.Apply power from the inside of marking 230, the line a-b that rives with in Figure 17 B rives on the direction of arrow of Figure 17 B.That is, be that starting point begins to rive with marking 230, the side front end is rived according to the order of raceway groove 243, ridge 242 through the dislocation associated region from riving.
End face parts such as the active layer of the spine that optical density uprises when laser moves and coating are accompanied by rives and when producing step discrepancy in elevation etc., the laser characteristic deterioration, and this is known.Thereby the end face in special requirement when riving " optical density uprises during the laser operation " zone does not have the step discrepancy in elevation and becomes smooth.But, when riving, on the end face in " optical density uprises during the laser operation " zones such as the active layer of spine and coating, produced the step discrepancy in elevation of Width according to the manufacture method of the semiconductor laser of comparative example.Wherein, the step discrepancy in elevation of so-called Width be with the upwardly extending step discrepancy in elevation in side of the direction of arrow almost parallel of for example Figure 17 B.In addition, if adopt other view, be exactly the step discrepancy in elevation harmful to the depth direction flatness among Figure 17 A.
The step discrepancy in elevation of such Width is not defined in the step discrepancy in elevation of extending especially closely on Width.That is, the step discrepancy in elevation of Width is to produce owing to expanding to aforesaid " optical density uprises during the laser operation " zone in riving process near the dislocation that exists the marking or produce, so have the step discrepancy in elevation of Width composition at least.In comparative example, considered the situation that makes the deterioration in characteristics of semiconductor laser owing to such Width step discrepancy in elevation.
Manufacture method according to the semiconductor laser of present embodiment can suppress the generation of the above-mentioned Width step discrepancy in elevation when riving.The following describes the feature of manufacture method of the semiconductor laser of present embodiment.
In the present embodiment, the thickness filming (etching) of the p type coating the zone that extends to the ridge that rive from the side front end of riving of associated region that is defined as misplacing is 0.06 μ m.Therefore, be starting point when beginning to rive for example with the marking 204 of Figure 16 A, can on the direction parallel, not expand near the dislocation that exists the marking or produce, and be to expand on the wafer surface direction in the direction vertical with the direction of riving with the direction of riving.Thereby because can not produce the step discrepancy in elevation of aforesaid Width, so can make the end face in " optical density uprises during the laser operation " zone smooth.So according to the manufacture method of the semiconductor laser of present embodiment, can rive makes near the end face ridge and the ridge flatten smooth.
Usually, the direction of carrying out of riving is along the crackly direction of its material.In addition, be starting point when beginning to rive as described herein with the marking, near the direction of dislocation expansion it is also along the crackly direction of aforesaid material.According to such understanding, think under the situation that the thickness of p type coating is thick in the dislocation associated region, for example be " Widths " such as directions near the dislocation the marking " crackly direction " along the border of single-crystal wafer and n type coating.On the other hand, think under the situation that the thickness of p type coating is thin in the dislocation associated region, when riving near the dislocation marking " crackly direction " be wafer surface direction vertically.Thereby the dislocation associated region in p type coating by the present invention of filming (etching) in, suppressed the dislocation of Width.Effect of the present invention is to obtain according to such technology.
In fact, the experiment carried out of present inventor has obtained confirming the following result of aforementioned research.At first, be that the wafer of the structure of 0.6 μ m is rived to the p type coating thickness of platform 244 among Figure 17 A of the comparative example that is used for illustrating present embodiment.Under this situation, general 70% semiconductor laser chip very important place on the characteristic of ridge 242 grades of its end face has produced the step discrepancy in elevation of Width.On the other hand, be the wafer of the structure of 0.06 μ m when riving to p type coating thickness T2 among Figure 16 A of explanation present embodiment, the probability of happening of the aforementioned Width step discrepancy in elevation is 0%.In addition, this experimental result is to carry out at the semiconductor laser that comprises general livid purple look LD ridge structure.
Wherein, comprise that the residual thickness of p type coating (overlying strata) of semiconductor laser of livid purple look LD ridge structure is because mostly the restriction of FFP (Far Field Pattern) etc. are about 0.4 μ m.Thereby in order to obtain effect of the present invention, the thickness of p type coating (overlying strata) can be less than 0.4 μ m in the aforementioned dislocation associated region.And, when considering the film forming deviation of p type coating (overlying strata) or etch bias etc., replace the value of aforementioned 0.4 μ m and when being 0.1 μ m, because further obtained effect of the present invention, so more suitable.Promptly, as previously mentioned, p type coating thickness T2 can avoid the problem of the Width step discrepancy in elevation when being 0.06 μ m, but because former beyond riving thereby need make T2 than 0.06 μ m more during thick film, by being 0.1 μ m, even exist the operation deviation also can obtain effect of the present invention.In addition, the T2 thickness that is used for obtaining effect of the present invention does not have lower limit, can be 0 μ m yet.
Aforesaid experimental result is at livid purple look LD, but because thought of the present invention is based on research to " easness that breaks of material ", so even think and also can obtain effect of the present invention for other material type, quantitative difference is arranged only.
And, owing in same etching work procedure, be used for forming the etching of ridge and the etching of dislocation associated region in the present invention, just obtain effect of the present invention so can not increase operation.
In the present embodiment, the dislocation associated region is the determined shape of length L 1, L2 that defines by formerly, but the present invention is not limited to this.That is, p type coating is 0.06 μ m (perhaps as previously mentioned less than the arbitrary value of 0.4 μ m) in the dislocation associated region by making in the present invention, can obtain effect, and the shape of dislocation associated region is arbitrarily.
Shown in Figure 18 A, comprise the height dislocation zone 300 that is called band heart portion as the wafer of the object of the semiconductor laser fabrication method of implementing present embodiment.Form marking with height dislocation zone 300 when overlapping, the p type coating by making the dislocation associated region also can be obtained effect of the present invention less than 0.4 μ m.And, even the parts that the sharp-pointed portion of marking 304 (sharp-pointed portion described as defined above) is not overlapping with height dislocation zone 300, be arranged on p type coating by in the part of filming (etching) time, also can further suppress near the step discrepancy in elevation of splitting surface (especially the ridge).In addition, comprise in the wafer in high dislocation zone that marking also can be arranged on the place beyond the high dislocation zone.At such example shown in Figure 18 B.Because Figure 18 B is provided with marking 304 on two chip 302 next doors,, can rive along the line of riving more accurately simultaneously so obtained effect of the present invention.
In the present embodiment, the manufacture method of the semiconductor laser that comprises platform has been described, but the present invention also goes for not having the situation of platform.The structure of the semiconductor laser that does not have platform before riving has been shown in Figure 19 A, 19B.Figure 19 A is a profile, and Figure 19 B is the plane graph of Figure 19 A.In this example, comprise p type coating 254, active layer 256, n type coating 258 in proper order from the surface, marking 250 is formed on p type coating 254 by in the part of filming (etching).
The structure that forms p type coating on active layer has been described in the present embodiment, even but the coating (being called overlying strata) that forms is that n type coating also can be obtained effect of the present invention on active layer.
And the present invention is not limited to the respective embodiments described above, can carry out various distortion in the scope that does not break away from main idea of the present invention.For example, also can be on the line of riving except spine, be provided with p type coating etched the zone, with consistent with the marking width.Figure 20 illustrates such example.Figure 20 is the plane graph of wafer before riving.Marking 402 and dislocation associated region are arranged in the etched zone of p type coating.In addition, use the part of the pattern application identical to represent that p type coating does not have etched zone (yet identical among Figure 21,22) in the figure with ridge 400.In addition, similarly, the wafer that also can form shown in Figure 21,22 is used for riving.Wherein, the arrow line among Figure 20,21,22 means the rive line and the direction of riving.
Claims (6)
1. the manufacture method of a semiconductor laser comprises:
On the GaN substrate, form the operation of the semiconductor layer that is provided with a plurality of spines;
The operation of a plurality of cut channels is set along the direction of riving across the interval of regulation on described GaN substrate from the side of described semiconductor layer; And
Along the rive operation of described GaN substrate of described cut channel, it is characterized in that,
Before the described operation of riving, between each described a plurality of spines and described a plurality of cut channel, be provided with and described a plurality of cut channels at least one groove on same straight line on the described semiconductor layer,
Described flute profile becomes the shape that protrude laterally the downstream side end of the direction of riving, and the summit of this shape is positioned on the line that will rive, and the outline line that extends from this summit is not parallel to the directions that become 60 degree with the direction of riving simultaneously.
2. the manufacture method of the semiconductor laser of record in the claim 1 is characterized in that,
Described shape sees it is triangle in the plane.
3. the manufacture method of the semiconductor laser of record in the claim 1 is characterized in that,
Described shape sees in the plane and is approximated to triangle that the outline line that extends from described summit becomes the shape of protruding laterally simultaneously.
4. the manufacture method of the semiconductor laser of record in the claim 1 is characterized in that,
Described shape sees in the plane and is approximated to triangle that the outline line that extends from described summit becomes the shape of protruding to the inside simultaneously.
5. the manufacture method of the semiconductor laser of record in the claim 1 is characterized in that,
Described shape sees in the plane and is approximated to triangle that the outline line that extends from described summit is to be made of and the whole shape of protruding to the inside many straight lines simultaneously.
6. the manufacture method of a semiconductor laser comprises:
On the GaN substrate, form the operation of the semiconductor layer that is provided with a plurality of spines;
The operation of a plurality of cut channels is set along the direction of riving across the interval of regulation on described GaN substrate from the side of described semiconductor layer; And
Along the rive operation of described GaN substrate of described cut channel,
It is characterized in that:
Before the described operation of riving, with described a plurality of cut channels the 1st groove and the 2nd groove are being set on same straight line on the described semiconductor layer,
Described the 1st groove is positioned at the downstream side of the direction of riving with respect to described cut channel between described spine and described cut channel,
Described the 2nd groove is positioned at the downstream side of the direction of riving with respect to described spine between described spine and described cut channel,
Described the 1st groove is the shape that the downstream side end of direction protrudes laterally of riving, and the summit of this shape is positioned on the line that will rive, and the outline line that extends from this summit is not parallel to the directions that become 60 degree with the direction of riving simultaneously,
Described the 2nd groove sees it is quadrangle, triangle or circle in the plane, and outline line is not parallel to the direction that becomes 60 degree with the direction of riving.
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| JP2007-035342 | 2007-02-15 | ||
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| JP2007035342 | 2007-02-15 | ||
| JP2008002879 | 2008-01-10 | ||
| JP2008002879A JP2008227461A (en) | 2007-02-15 | 2008-01-10 | Method of manufacturing semiconductor laser |
| JP2008-002879 | 2008-01-10 |
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| CN 201010004576 Division CN101944704A (en) | 2007-02-15 | 2008-02-14 | Method for manufacturing a semiconductor laser |
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| JP5327154B2 (en) * | 2009-12-25 | 2013-10-30 | 住友電気工業株式会社 | Group III nitride semiconductor laser device and method of manufacturing group III nitride semiconductor laser device |
| JP5365679B2 (en) * | 2009-12-25 | 2013-12-11 | 住友電気工業株式会社 | Group III nitride semiconductor laser device |
| WO2017006902A1 (en) * | 2015-07-07 | 2017-01-12 | 三菱電機株式会社 | Semiconductor element production method |
| JP6672721B2 (en) * | 2015-11-09 | 2020-03-25 | 三菱電機株式会社 | Semiconductor laser and method of manufacturing the same |
| CN113659435B (en) * | 2021-06-24 | 2023-06-09 | 威科赛乐微电子股份有限公司 | Oxidation process of VCSEL chip |
| CN114188820A (en) * | 2022-02-14 | 2022-03-15 | 常州承芯半导体有限公司 | Method for forming vertical cavity surface emitting laser |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5629233A (en) * | 1996-04-04 | 1997-05-13 | Lucent Technologies Inc. | Method of making III/V semiconductor lasers |
| US6734503B2 (en) * | 2001-08-07 | 2004-05-11 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor element |
| CN1641951A (en) * | 2003-10-29 | 2005-07-20 | 日本电气株式会社 | Semiconductor device and a method for the manufacture thereof |
| US7041523B2 (en) * | 2001-07-03 | 2006-05-09 | Sharp Kabushiki Kaisha | Method of fabricating nitride semiconductor device |
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| JP4830315B2 (en) * | 2004-03-05 | 2011-12-07 | 日亜化学工業株式会社 | Semiconductor laser element |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5629233A (en) * | 1996-04-04 | 1997-05-13 | Lucent Technologies Inc. | Method of making III/V semiconductor lasers |
| US7041523B2 (en) * | 2001-07-03 | 2006-05-09 | Sharp Kabushiki Kaisha | Method of fabricating nitride semiconductor device |
| US6734503B2 (en) * | 2001-08-07 | 2004-05-11 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor element |
| CN1641951A (en) * | 2003-10-29 | 2005-07-20 | 日本电气株式会社 | Semiconductor device and a method for the manufacture thereof |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2002-64236A 2002.02.28 |
| JP特开2004-186340A 2004.07.02 |
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| JP2008227461A (en) | 2008-09-25 |
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| TW200847562A (en) | 2008-12-01 |
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