CN101256778A - 垂直磁记录介质及其制造方法 - Google Patents
垂直磁记录介质及其制造方法 Download PDFInfo
- Publication number
- CN101256778A CN101256778A CNA2008100812808A CN200810081280A CN101256778A CN 101256778 A CN101256778 A CN 101256778A CN A2008100812808 A CNA2008100812808 A CN A2008100812808A CN 200810081280 A CN200810081280 A CN 200810081280A CN 101256778 A CN101256778 A CN 101256778A
- Authority
- CN
- China
- Prior art keywords
- layer
- crystallite dimension
- recording medium
- magnetic recording
- perpendicular magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 80
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000013078 crystal Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 41
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 20
- 229910000929 Ru alloy Inorganic materials 0.000 claims abstract description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 38
- 239000000956 alloy Substances 0.000 claims description 38
- 230000012010 growth Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 238000004062 sedimentation Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910018979 CoPt Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 abstract description 3
- 229910000531 Co alloy Inorganic materials 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 15
- 238000003917 TEM image Methods 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 229910019222 CoCrPt Inorganic materials 0.000 description 6
- 239000010952 cobalt-chrome Substances 0.000 description 6
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000696 magnetic material Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000005204 segregation Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- -1 CoCrTa Inorganic materials 0.000 description 1
- 229910005347 FeSi Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005039 memory span Effects 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/1278—Structure or manufacture of heads, e.g. inductive specially adapted for magnetisations perpendicular to the surface of the record carrier
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
- G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
- G11B5/702—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the bonding agent
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B2005/0002—Special dispositions or recording techniques
- G11B2005/0026—Pulse recording
- G11B2005/0029—Pulse recording using magnetisation components of the recording layer disposed mainly perpendicularly to the record carrier surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007045546 | 2007-02-26 | ||
JP2007045546A JP2008210446A (ja) | 2007-02-26 | 2007-02-26 | 磁気記録媒体およびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101256778A true CN101256778A (zh) | 2008-09-03 |
Family
ID=39716251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2008100812808A Pending CN101256778A (zh) | 2007-02-26 | 2008-02-26 | 垂直磁记录介质及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20080206601A1 (zh) |
JP (1) | JP2008210446A (zh) |
KR (1) | KR20080079199A (zh) |
CN (1) | CN101256778A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103396763A (zh) * | 2012-02-23 | 2013-11-20 | 旭硝子株式会社 | 二氧化硅溶液制备方法、研磨液及玻璃基板的制造方法 |
CN105874536A (zh) * | 2014-08-12 | 2016-08-17 | 富士电机株式会社 | 磁记录介质 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8394243B1 (en) | 2008-07-24 | 2013-03-12 | Wd Media, Inc. | Sputtered cobalt oxide for perpendicular magnetic recording medium with low media noise |
US8488276B1 (en) * | 2008-09-30 | 2013-07-16 | WD Media, LLC | Perpendicular magnetic recording medium with grain isolation magnetic anistropy layer |
US8436520B2 (en) | 2010-07-29 | 2013-05-07 | Federal-Mogul Ignition Company | Electrode material for use with a spark plug |
US8404369B2 (en) * | 2010-08-03 | 2013-03-26 | WD Media, LLC | Electroless coated disks for high temperature applications and methods of making the same |
US8585811B2 (en) | 2010-09-03 | 2013-11-19 | Omg Electronic Chemicals, Llc | Electroless nickel alloy plating bath and process for depositing thereof |
US20120064375A1 (en) * | 2010-09-14 | 2012-03-15 | Hitachi Global Storage Technologies Netherlands B. V. | Method for manufacturing a perpendicular magnetic data recording media having a pseudo onset layer |
US8993133B1 (en) | 2010-12-23 | 2015-03-31 | WD Media, LLC | Intermediate layer for perpendicular magnetic recording medium with high permeability grain boundaries |
US8471451B2 (en) | 2011-01-05 | 2013-06-25 | Federal-Mogul Ignition Company | Ruthenium-based electrode material for a spark plug |
DE112012000600B4 (de) | 2011-01-27 | 2018-12-13 | Federal-Mogul Ignition Company | Zündkerzenelektrode für eine Zündkerze, Zündkerze und Verfahren zum Herstellen einer Zündkerzenelektrode |
WO2012116062A2 (en) | 2011-02-22 | 2012-08-30 | Federal-Mogul Ignition Company | Electrode material for a spark plug |
US8766519B2 (en) | 2011-06-28 | 2014-07-01 | Federal-Mogul Ignition Company | Electrode material for a spark plug |
US10044172B2 (en) | 2012-04-27 | 2018-08-07 | Federal-Mogul Ignition Company | Electrode for spark plug comprising ruthenium-based material |
US8890399B2 (en) | 2012-05-22 | 2014-11-18 | Federal-Mogul Ignition Company | Method of making ruthenium-based material for spark plug electrode |
US8979606B2 (en) | 2012-06-26 | 2015-03-17 | Federal-Mogul Ignition Company | Method of manufacturing a ruthenium-based spark plug electrode material into a desired form and a ruthenium-based material for use in a spark plug |
JP6285785B2 (ja) * | 2013-06-10 | 2018-02-28 | 昭和電工株式会社 | 垂直記録媒体および垂直記録再生装置 |
JP2016051487A (ja) | 2014-08-29 | 2016-04-11 | 株式会社東芝 | 磁気記録媒体、磁気記録媒体の製造方法、磁気記録再生装置 |
US9685184B1 (en) | 2014-09-25 | 2017-06-20 | WD Media, LLC | NiFeX-based seed layer for magnetic recording media |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4388367A (en) * | 1981-09-28 | 1983-06-14 | Xerox Corporation | Perpendicular magnetic recording medium and fabrication |
US7175925B2 (en) * | 2003-06-03 | 2007-02-13 | Seagate Technology Llc | Perpendicular magnetic recording media with improved crystallographic orientations and method of manufacturing same |
JP2005353256A (ja) * | 2004-05-13 | 2005-12-22 | Fujitsu Ltd | 垂直磁気記録媒体およびその製造方法、磁気記憶装置 |
JP2006268972A (ja) * | 2005-03-24 | 2006-10-05 | Hoya Corp | 垂直磁気記録ディスク及びその製造方法 |
JP2006309919A (ja) * | 2005-03-30 | 2006-11-09 | Fujitsu Ltd | 垂直磁気記録媒体、その製造方法および磁気記憶装置 |
-
2007
- 2007-02-26 JP JP2007045546A patent/JP2008210446A/ja active Pending
-
2008
- 2008-02-08 US US12/028,518 patent/US20080206601A1/en not_active Abandoned
- 2008-02-22 KR KR1020080016105A patent/KR20080079199A/ko not_active Application Discontinuation
- 2008-02-26 CN CNA2008100812808A patent/CN101256778A/zh active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103396763A (zh) * | 2012-02-23 | 2013-11-20 | 旭硝子株式会社 | 二氧化硅溶液制备方法、研磨液及玻璃基板的制造方法 |
CN103396763B (zh) * | 2012-02-23 | 2016-04-13 | 旭硝子株式会社 | 二氧化硅溶液制备方法、研磨液及玻璃基板的制造方法 |
CN105874536A (zh) * | 2014-08-12 | 2016-08-17 | 富士电机株式会社 | 磁记录介质 |
CN105874536B (zh) * | 2014-08-12 | 2018-08-31 | 富士电机株式会社 | 磁记录介质 |
Also Published As
Publication number | Publication date |
---|---|
US20080206601A1 (en) | 2008-08-28 |
JP2008210446A (ja) | 2008-09-11 |
KR20080079199A (ko) | 2008-08-29 |
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Legal Events
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---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SHOWA DENKO CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20100531 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: KAWASAKI-SHI, KANAGAWA-KEN, JAPAN TO: TOKYO, JAPAN |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20100531 Address after: Tokyo, Japan Applicant after: Showa Denko K. K. Address before: Kawasaki, Kanagawa, Japan Applicant before: Fujitsu Ltd. |
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C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20080903 |