CN101256362A - 化学增幅光刻胶等效扩散模型的建立方法 - Google Patents
化学增幅光刻胶等效扩散模型的建立方法 Download PDFInfo
- Publication number
- CN101256362A CN101256362A CNA2007100377154A CN200710037715A CN101256362A CN 101256362 A CN101256362 A CN 101256362A CN A2007100377154 A CNA2007100377154 A CN A2007100377154A CN 200710037715 A CN200710037715 A CN 200710037715A CN 101256362 A CN101256362 A CN 101256362A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- building
- chemical amplification
- equivalent diffusion
- resolution chart
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007100377154A CN101256362B (zh) | 2007-02-28 | 2007-02-28 | 化学增幅光刻胶等效扩散模拟方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007100377154A CN101256362B (zh) | 2007-02-28 | 2007-02-28 | 化学增幅光刻胶等效扩散模拟方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101256362A true CN101256362A (zh) | 2008-09-03 |
CN101256362B CN101256362B (zh) | 2010-07-21 |
Family
ID=39891262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007100377154A Active CN101256362B (zh) | 2007-02-28 | 2007-02-28 | 化学增幅光刻胶等效扩散模拟方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101256362B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102608869A (zh) * | 2011-01-19 | 2012-07-25 | 上海华虹Nec电子有限公司 | 低k1情况下的光刻方法 |
CN112334839A (zh) * | 2019-05-30 | 2021-02-05 | 埃斯科绘图成像有限责任公司 | 自动测量光聚合物印刷版密度的处理和装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE59003052D1 (de) * | 1989-05-18 | 1993-11-18 | Asea Brown Boveri | Halbleiterbauelement. |
JPH11237742A (ja) * | 1998-02-23 | 1999-08-31 | Nec Corp | レジスト材料、レジストパターンおよび製造方法 |
EP1270553B1 (en) * | 2001-06-29 | 2009-11-18 | JSR Corporation | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition |
-
2007
- 2007-02-28 CN CN2007100377154A patent/CN101256362B/zh active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102608869A (zh) * | 2011-01-19 | 2012-07-25 | 上海华虹Nec电子有限公司 | 低k1情况下的光刻方法 |
CN102608869B (zh) * | 2011-01-19 | 2014-04-16 | 上海华虹宏力半导体制造有限公司 | 低k1情况下的光刻方法 |
CN112334839A (zh) * | 2019-05-30 | 2021-02-05 | 埃斯科绘图成像有限责任公司 | 自动测量光聚合物印刷版密度的处理和装置 |
CN112334839B (zh) * | 2019-05-30 | 2023-10-31 | 埃斯科绘图成像有限责任公司 | 自动测量光聚合物印刷版密度的处理和装置 |
US11867711B2 (en) | 2019-05-30 | 2024-01-09 | Esko-Graphics Imaging Gmbh | Process and apparatus for automatic measurement of density of photopolymer printing plates |
Also Published As
Publication number | Publication date |
---|---|
CN101256362B (zh) | 2010-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI651623B (zh) | 光敏化化學放大光阻之模型校正 | |
US6777147B1 (en) | Method for evaluating the effects of multiple exposure processes in lithography | |
TWI657347B (zh) | 光敏化化學放大光阻之模擬 | |
KR102243006B1 (ko) | 네거티브 톤 현상 가능한 포토 레지스트의 컴퓨터 모델링 및 시뮬레이션을 위한 개선된 방법 | |
CN106164733A (zh) | 使用散射术计量的焦点测量 | |
TWI236698B (en) | Pattern size correction apparatus and pattern size correction method | |
CN105425532A (zh) | 光源掩模协同优化方法 | |
CN104090468A (zh) | 曝光辅助图形的优化方法 | |
Santaclara et al. | One metric to rule them all: new k4 definition for photoresist characterization | |
US7093226B2 (en) | Method and apparatus of wafer print simulation using hybrid model with mask optical images | |
CN111443569B (zh) | 一种修正模型的建立方法及装置、掩模优化方法及装置 | |
CN101256362B (zh) | 化学增幅光刻胶等效扩散模拟方法 | |
CN101738874B (zh) | 光刻胶显影模拟的方法 | |
TW202328814A (zh) | 一種負向顯影光刻膠模型優化方法 | |
Hung et al. | Pushing the lithography limit: Applying inverse lithography technology (ILT) at the 65nm generation | |
Mansfield et al. | Through-process modeling in a DfM environment | |
Fay et al. | Complete data preparation flow for Massively Parallel E-Beam lithography on 28nm node full-field design | |
Wang et al. | DeePEB: A Neural Partial Differential Equation Solver for Post Exposure Baking Simulation in Lithography | |
Word et al. | Model-based prediction of full-chip SRAF printability | |
CN109683447A (zh) | 一种光源掩模协同优化初始光源的确定方法及装置 | |
JP2005049460A (ja) | レジストパターン作成方法、レジストパターン作成装置、フォトマスクの設計方法及びフォトマスク | |
Needham et al. | Advanced simulations using an improved metal oxide photoresist model | |
D'Silva | Modelling nanomechanical effects in advanced lithographic materials and processes | |
Graves et al. | Methods for benchmarking photolithography simulators: part V | |
Richter et al. | PHOTOMASK PHOTOMASK |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 200121 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TR01 | Transfer of patent right |
Effective date of registration: 20131216 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 200121, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |