CN101252106B - Wafer structure with buffer layer - Google Patents
Wafer structure with buffer layer Download PDFInfo
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- CN101252106B CN101252106B CN 200810086110 CN200810086110A CN101252106B CN 101252106 B CN101252106 B CN 101252106B CN 200810086110 CN200810086110 CN 200810086110 CN 200810086110 A CN200810086110 A CN 200810086110A CN 101252106 B CN101252106 B CN 101252106B
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- resilient coating
- circle structure
- crystal circle
- protective layer
- wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
Abstract
The invention discloses a wafer structure provided with a buffer layer, comprising a wafer which is provided with at least one welded gasket, wherein, a passivation layer is arranged on the wafer and exposes the welded gasket; the buffer layer is arranged on the passivation layer and the welded gasket; an under bump metallurgy (UBM) layer is arranged on the buffer layer. The buffer layer comprises a thickened inner buffer layer which is made of aluminum materials and is formed between the UBM layer and the welded gasket so as to strengthen the damping capacity of the wafer during the process of a drop test, thereby the phenomenon that a conductive lug which is used for being coupled with a substrate is dropped off and broken is avoided and the coupling ability of the conductive lug and the UBM layer can be strengthened. Moreover, the buffer layer can also comprise an outer buffer layer which is made of polyamide materials, arranged on the passivation layer and partially positioned between the UBM layer and the passivation layer.
Description
Technical field
The invention relates to a kind of crystal circle structure, and particularly relevant for a kind of crystal circle structure of tool resilient coating, it is that weld pad at wafer adds resilient coating, in order to the structural strength that strengthens wafer and prevent coming off of conductive projection, and strengthen (join) ability that engages of weld pad and projection lower metal layer.
Background technology
In semiconductor packaging process, usual way has routing to engage (wire bonding), coil type automatically engages (tap automated bonding) and falls the brilliant three kinds of modes such as (flip chip) that engage, in order to satisfy the now compact requirement of electronic product, the chip that needs development small size and high pin number, not only volume ratio is larger for the product after yet employing routing juncture and the automatic juncture of coil type encapsulate, also can't reach the requirement of high pin number, by contrast, crystalline substance has been bonded into preferably selection.
Show among Fig. 1 that existing employing falls the crystal circle structure schematic diagram of brilliant joint technology; this crystal circle structure comprises wafer 102; side surface (such as back surface) at wafer 102 is provided with at least one weld pad 104; although only demonstrate a weld pad 104 among the figure; but those of ordinary skill in the art should know; a plurality of weld pads 104 can be set on wafer 102 usually, and only demonstrate a weld pad 104 among the figure just for convenience of explanation, just be illustrated again at this for this point.This side surface at wafer 102 covers layer protective layer (passivation) 106 in addition, and this protective layer 106 structurally is provided with opening, and corresponding to each weld pad 104, so that this weld pad 104 is exposed to outside the protective layer 106.Be provided with a projection lower metal layer 112 (UBM, under bump metallurgy) in each opening of protective layer 106, it forms with the weld pad 104 that comes out via this opening and is electrically connected.
Except foregoing structure, fall in the brilliant joint technology existing, can conductive projection be set at this projection lower metal layer 112 in addition, this conductive projection and this projection lower metal layer 112 form and are electrically connected, and in subsequent technique, be used for engaging with a substrate, be electrically connected on this wafer 102 so that this substrate is seen through this conductive projection, projection lower metal layer 112 and weld pad 104, thereby finish down the brilliant technique that engages.
Although the above-mentioned crystal circle structure widely technology personage in the wafer level packaging industry adopts, and in the development of industry its indispensable necessity is arranged, but aforesaid structure still has its space that can further improve, and for example aforesaid existing crystal circle structure can produce following shortcoming:
First: owing to be arranged on conductive projection on the projection lower metal layer 112 normally by made without the slicker solder ball, and the material of tin is generally speaking comparatively firmly crisp, therefore when drop test because damping capaicty is relatively poor, cause easily occuring without the cracked situation of slicker solder ball.This problem can cause crystal circle structure to have relatively poor shatter-proof characteristic, does not have good resistance for the effect of external force, very easily damages because of collision.
Second: drop on projection lower metal layer 112 easily in order to the conductive projection that is electrically connected wafer and substrate, the yield of product is not good when causing down brilliant joint technology.
Summary of the invention
Main purpose of the present invention is to provide a kind of crystal circle structure of tool resilient coating, increase resilient coating at weld pad, in order to strengthen the joint capacity of conductive projection and projection lower metal layer, thereby strengthen the damping capaicty of wafer when drop test (drop test), and strengthen the structural strength of wafer.
For reaching above-mentioned purpose or other purpose, the present invention adopts following technical scheme: a kind of crystal circle structure of tool resilient coating comprises: a wafer, a protective layer, an interior resilient coating and a projection lower metal layer, and wherein said wafer comprises at least one weld pad; Described protective layer is arranged on the described wafer, and exposes described weld pad; Described interior resilient coating is arranged on the described weld pad; Described projection lower metal layer is arranged on the described interior resilient coating.
Above-mentioned interior resilient coating is the cover part protective layer also.
The crystal circle structure of above-mentioned tool resilient coating also includes an outer resilient coating that is arranged on the described protective layer.
Above-mentioned interior resilient coating is resilient coating outside the cover part also.
Material and the bonding pad materials of above-mentioned interior resilient coating are aluminium.
Above-mentioned interior resilient coating is to make in the mode of electroless-plating, and its thickness is at least greater than 3 microns.
Above-mentioned protective layer cover part weld pad.
Above-mentioned projection lower metal layer is resilient coating outside the cover part also, and the material of the described projection lower metal layer of the material of projection lower metal layer is selected from the combination that is made of nickel, gold, palladium, titanium, vanadium and the alloy of these materials.
Compared to prior art, the present invention can strengthen structural strength and the damping capaicty of wafer by increase resilient coating between weld pad and projection lower metal layer, but also can strengthen the joint capacity of conductive projection and projection lower metal layer.
Description of drawings
Fig. 1 demonstrates existing crystal circle structure schematic diagram.
Fig. 2 demonstrates the crystal circle structure schematic diagram of first embodiment of the invention.
Fig. 3 demonstrates the crystal circle structure schematic diagram of second embodiment of the invention.
Fig. 4 demonstrates the crystal circle structure schematic diagram of third embodiment of the invention.
Fig. 5 demonstrates the crystal circle structure schematic diagram of fourth embodiment of the invention.
Fig. 6 demonstrates the crystal circle structure schematic diagram of fifth embodiment of the invention.
Fig. 7 demonstrates the crystal circle structure schematic diagram of sixth embodiment of the invention.
Fig. 8 demonstrates the crystal circle structure schematic diagram of seventh embodiment of the invention.
Embodiment
The invention provides a kind of crystal circle structure of tool resilient coating; it is to add resilient coating in crystal circle structure; in order to the structural strength that strengthens wafer and prevent coming off of soldered ball; see also the schematic diagram of crystal circle structure according to first embodiment of the invention shown in Figure 2, this crystal circle structure includes: a wafer 202, a protective layer 206, an outer resilient coating 208, an interior resilient coating 210 and a projection lower metal layer 212.
Wafer 202 has a first surface (surface, top as shown in Figure 2), at this first surface at least one weld pad 204 is set, form electric connection with wafer 202, although in graphic, only demonstrate a weld pad 204, but should know, a plurality of weld pads 204 can be set on the first surface of wafer 202, or other electric connection element or other electric/electronic, and these all are the known technology of those skilled in the art in this area, therefore are not described in detail at this.In addition, in preferred embodiment of the present invention, the material of this weld pad 204 is aluminium or its relevant alloy, its reason mainly is: it is comparatively simple and easy and cost is low to form the technique of aluminium pad at wafer, but in the art other can be used for making the material of weld pad on the wafer, also can be used, the present invention is not limited to the application of certain material in this.
First surface at wafer 202 covers layer protective layer 206, and it is existing technique or technology in this area, is formed on the first surface of this wafer 202 by suitable insulating material or dielectric material.When protective layer 206 is arranged on this wafer 202; be equipped with an opening (not indicating) corresponding to each weld pad 204 place on the protective layer 206; be used for for exposing this weld pad 204 by this opening; but being used for this opening of this weld pad 204 of cover part can be to adopt any existing mode to be processed to form, such as etching etc.Among the embodiment shown in the figure, this opening will be made as can be so that the peripheral part protected seam 206 of weld pad 204 covers.
According to the present invention; for so that wafer has better shatter-proof and shock-absorbing capacity; add resilient coating 208 outside one deck at this protective layer 206; this outer resilient coating 208 is arranged at the top of this protective layer 206; and be provided with equally an opening; and the opening that is somebody's turn to do outer resilient coating 208 is the opening corresponding to this protective layer 206, for exposing this weld pad 204.According to preferred embodiment of the present invention, the material of this outer resilient coating 208 is Polyimide, based on the soft characteristic of plastic material, can provide better earthquake-proof function, and absorb the energy of external force collision.In illustrated embodiment, the opening of outer resilient coating 208 is the openings that are slightly larger than protective layer 206, so a part that is positioned at its opening periphery on the protective layer 206 can expose out with the opening of weld pad 204 via outer resilient coating 208.
In addition; for cushioning effect further is provided; according to the present invention; add resilient coating 210 in one deck at the weld pad 204 that exposes outside via the opening on aforementioned protective layer 206 and the outer resilient coating 208; can be manufactured by any existing technique; and in preferred embodiment of the present invention; should in resilient coating 210 be that mode with electroless-plating is arranged at aluminium on this weld pad 204; its thickness is at least greater than 3 microns, and this interior this protective layer 206 of resilient coating 210 cover parts and this outer resilient coating 208 of part.According to preferred embodiment of the present invention, should interior resilient coating 210 be made by aluminium or its alloy, its thickness is much bigger with respect to weld pad 204 thickness, therefore the surface, top of resilient coating 210 can protrude from outer resilient coating 208 tops in, can provide better cushioning effect like this, this is that also because in the present invention, thickness of resilient coating 210 increases again many relatively in this simultaneously because of the comparatively soft cause of aluminium.In addition, the advantage that can be worth mentioning is: because weld pad 204 is to be manufactured by aluminum to form, the interior resilient coating 210 of therefore also being manufactured by aluminum can be formed on the weld pad 204 easily, and forms splendid joint effect between the two.
Protrude from interior resilient coating 210 above the outer resilient coating 208 above be provided with a projection lower metal layer 212, it normally is comprised of with a wetting layer an adhesion layer (adhesion layer), a barrier layer (barrier layer), resilient coating 208 outside these projection lower metal layer 212 cover parts, its material are to be selected from the combination that is made of nickel, gold, palladium, titanium, vanadium and the alloy of these materials.
Above-mentioned should can the covering fully or this protective layer 206 of partial coverage by outer resilient coating 208; Should in resilient coating 210 can partial coverage or do not cover this protective layer 206, resilient coating 210 is for this fully covering of outer resilient coating 208, partial coverage or do not cover in this.In like manner, in other words this fully covering of projection lower metal layer 212, partial coverage or do not cover this outer resilient coating 208, can be done in other embodiments different combinations and change.
Fig. 3 demonstrates the crystal circle structure schematic diagram of second embodiment of the invention, wherein should cover this protective layer 206 fully by outer resilient coating 208.
Fig. 4 demonstrates the crystal circle structure schematic diagram of third embodiment of the invention, wherein should not cover this outer resilient coating 208 by interior resilient coating 210.
Fig. 5 demonstrates the crystal circle structure schematic diagram of fourth embodiment of the invention, and wherein this projection lower metal layer 212 does not cover resilient coating 210 in this.
Fig. 6 demonstrates the crystal circle structure schematic diagram of fifth embodiment of the invention; wherein omit outer resilient coating 208; and only has the interior resilient coating 210 of thickening; therefore the crystal circle structure according to this 5th embodiment includes: a wafer 202, a protective layer 206, an interior resilient coating 210 and a projection lower metal layer 212; wherein wafer 202 comprises at least one weld pad 204, and the material of this weld pad 204 is aluminium.Protective layer 206 is arranged on this wafer 202, exposes this at least one weld pad 204, and this weld pad 204 of cover part.Interior resilient coating 210 is in the mode of electroless-plating aluminium to be arranged at the top of this at least one weld pad 204, and its thickness is at least greater than 3 microns, resilient coating 210 this protective layer 206 of cover part also in this.Projection lower metal layer 212 is arranged at the top of resilient coating 210 in this, and this this protective layer 206 of projection lower metal layer 212 cover parts, its material are to be selected from the combination that is made of nickel, gold, palladium, titanium, vanadium and the alloy of these materials.
Above-mentioned should in fully covering of resilient coating 210, partial coverage or do not cover this protective layer 206.In like manner, this fully covering of projection lower metal layer 212, partial coverage or do not cover resilient coating 210 in this change thereby can do different combinations.
Fig. 7 demonstrates the crystal circle structure schematic diagram of sixth embodiment of the invention, wherein should not cover this protective layer 206 by interior resilient coating 210.
Fig. 8 demonstrates the crystal circle structure schematic diagram of seventh embodiment of the invention, and wherein this projection lower metal layer 212 does not cover resilient coating 210 in this.
Main feature of the present invention comprises: it is poor (a) to improve the wafer damping capaicty, causes easily cracked problem of conductive projection; And (b) improve the problem that conductive projection drops easily.
Claims (9)
1. the crystal circle structure of a tool resilient coating comprises: a wafer, a protective layer and a projection lower metal layer, and wherein said wafer comprises at least one weld pad; Described protective layer is arranged on the described wafer, and exposes described weld pad; It is characterized in that: the crystal circle structure of described tool resilient coating also includes one and is arranged at outer resilient coating and on the described protective layer and is arranged at interior resilient coating on the described weld pad, the surface, top of described interior resilient coating protrudes from the top of described outer resilient coating, and the low below for described outer resilient coating of the surface below of described interior resilient coating; Described projection lower metal layer is arranged on the described interior resilient coating, and covers described interior resilient coating, and the described outer resilient coating in cover part; The material of described bonding pad materials and described interior resilient coating is aluminium; The thickness of described interior resilient coating is at least greater than 3 microns.
2. the crystal circle structure of tool resilient coating as claimed in claim 1, it is characterized in that: the described protective layer in described outer resilient coating cover part, described interior resilient coating is the described protective layer in cover part also.
3. the crystal circle structure of tool resilient coating as claimed in claim 1, it is characterized in that: described outer resilient coating covers described protective layer fully, and described interior resilient coating does not cover described protective layer.
4. have as claimed in claim 2 or claim 3 a crystal circle structure of resilient coating, it is characterized in that: described interior resilient coating is the described outer resilient coating in cover part also.
5. the crystal circle structure of tool resilient coating as claimed in claim 1, it is characterized in that: described interior resilient coating does not cover described outer resilient coating.
6. the crystal circle structure of tool resilient coating as claimed in claim 1 is characterized in that: the material of described projection lower metal layer is selected from the combination that is made of nickel, gold, palladium, titanium, vanadium and the alloy of these materials.
7. the crystal circle structure of tool resilient coating as claimed in claim 1 is characterized in that: described protective layer cover part weld pad.
8. the crystal circle structure of tool resilient coating as claimed in claim 1, it is characterized in that: described interior resilient coating is to make in the mode of electroless-plating.
9. the crystal circle structure of tool resilient coating as claimed in claim 1, it is characterized in that: the material of described outer resilient coating is pi.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810086110 CN101252106B (en) | 2008-03-11 | 2008-03-11 | Wafer structure with buffer layer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200810086110 CN101252106B (en) | 2008-03-11 | 2008-03-11 | Wafer structure with buffer layer |
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| CN101252106A CN101252106A (en) | 2008-08-27 |
| CN101252106B true CN101252106B (en) | 2013-02-20 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9666550B2 (en) | 2014-12-16 | 2017-05-30 | Tongfu Microelectronics Co., Ltd. | Method and structure for wafer-level packaging |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104485295A (en) * | 2014-12-16 | 2015-04-01 | 南通富士通微电子股份有限公司 | Wafer level packaging method |
| CN111508919A (en) | 2019-01-31 | 2020-08-07 | 联华电子股份有限公司 | Semiconductor device and method for manufacturing semiconductor device |
| JP2020150232A (en) * | 2019-03-15 | 2020-09-17 | キオクシア株式会社 | Semiconductor device and method for manufacturing the same |
| CN111463181B (en) * | 2020-03-31 | 2021-07-06 | 厦门通富微电子有限公司 | Method for preventing bump of wafer unit from falling off and wafer unit |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6417089B1 (en) * | 2000-01-03 | 2002-07-09 | Samsung Electronics, Co., Ltd. | Method of forming solder bumps with reduced undercutting of under bump metallurgy (UBM) |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6417089B1 (en) * | 2000-01-03 | 2002-07-09 | Samsung Electronics, Co., Ltd. | Method of forming solder bumps with reduced undercutting of under bump metallurgy (UBM) |
Non-Patent Citations (1)
| Title |
|---|
| JP昭57-126150A 1982.08.05 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9666550B2 (en) | 2014-12-16 | 2017-05-30 | Tongfu Microelectronics Co., Ltd. | Method and structure for wafer-level packaging |
| US9922950B2 (en) | 2014-12-16 | 2018-03-20 | Tongfu Microelectronics Co., Ltd. | Method and structure for wafer-level packaging |
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| CN101252106A (en) | 2008-08-27 |
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