CN101246824A - Method for dynamically etching sheet metal and forming metal wire - Google Patents
Method for dynamically etching sheet metal and forming metal wire Download PDFInfo
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- CN101246824A CN101246824A CNA2007100374669A CN200710037466A CN101246824A CN 101246824 A CN101246824 A CN 101246824A CN A2007100374669 A CNA2007100374669 A CN A2007100374669A CN 200710037466 A CN200710037466 A CN 200710037466A CN 101246824 A CN101246824 A CN 101246824A
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Abstract
The invention relates to a method for forming metal wire by dynamic etching a metal layer, wherein the metal layer is deposited on a wafer and has a photoetched and metal-wire-graph-developed photoresistance, comprising a first stage etching, a second etching and a third etching. The third stage etching in current method is a time-fixed etching, which easily causes under etching or over etching of the metal layer. In this method, a time-fixed etching is carried out first, then the second state etching is performed according to the metal content in the tail gas to control the etching end, thereafter, the time of the second etching is acquired, according to which the time of the third stage etching is calculated, and finally the third stage etching is carried out according to the time of the third stage etching. According to the invention, the etching time of the third stage etching is determined by the etching time of the second stage etching, avoiding the under etching or over etching of the metal layer.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of dynamically etching sheet metal forms the method for metal wire.
Background technology
In field of semiconductor manufacture, after making, semiconductor device needs semiconductor device to be coupled together the chip that has certain function with formation by metal wire.When making this metal wire, deposit one metal level on wafer earlier makes the figure of metal wire then by lithography on this metal level, and last etching forms this metal wire.Referring to Fig. 1, the structural representation that has shown metal level 1, as shown in the figure, metal level 1 is deposited on the wafer 2, and leave the photoresistance 3 of the photoetching and the metal line pattern of having developed on the metal level 1, metal level 1 comprises first titanium nitride layer 10, aluminum-copper alloy layer 11, second titanium nitride layer 12 and silicon oxynitride layer 13 from bottom to up successively, and its thickness is respectively 250 dusts, 4500 dusts, 250 dusts and 320 dusts.
When etching sheet metal 1 forms metal wire, need carry out the etching of following three phases: carry out the phase I etching earlier, the phase I etching be the timing etching, and its etch period is in 15 to 30 second second scope; Carry out the second stage etching then, the tenor in detecting etching tail gas stops the second stage etching when reducing to a certain amount of more; Carry out the phase III etching of set time at last, its etch period is in 15 to 30 seconds scopes.
But, because the skewness of metal wire, metal level is also existing difference aspect structure and the thickness in addition, so just that metal level 1 first titanium nitride layer, 10 etchings bottom are the clean probability of the etching of set time of above-mentioned phase III is minimum, can cause first titanium nitride layer 10 not to be etched totally, or over etching occur and damage the semiconductor device of 2 li of wafers under the metal level 1.
Summary of the invention
The object of the present invention is to provide a kind of dynamically etching sheet metal to form the method for metal wire, can avoid metal level etching deficiency or over etching by described method.
The object of the present invention is achieved like this: a kind of dynamically etching sheet metal forms the method for metal wire, wherein, this metal level is deposited on the wafer, the photoresistance that has the photoetching and the metal line pattern of developing on this metal level, this method is carried out the phase I etching of a set time earlier, carry out controlling the second stage etching of etching terminal then according to the content of metal in the etching tail gas, then capture the time of second stage etching, Time Calculation according to the second stage etching goes out the phase III etch period afterwards, carries out the phase III etching according to the phase III etch period at last.
Form in the method for metal wire at above-mentioned dynamically etching sheet metal, the time that this phase III etch period is the second stage etching be multiply by a coefficient, and this coefficient is 0.4.
Form in the method for metal wire at above-mentioned dynamically etching sheet metal, the scope of this set time is 15 to 30 seconds.
Form in the method for metal wire at above-mentioned dynamically etching sheet metal, this metal wire comprises first titanium nitride layer, aluminum-copper alloy layer, second titanium nitride layer and silicon oxynitride layer from bottom to up successively, and the thickness of this first titanium nitride layer, aluminum-copper alloy layer, second titanium nitride layer and silicon oxynitride layer is respectively 250 dusts, 4500 dusts, 250 dusts and 320 dusts.
Form in the method for metal wire at above-mentioned dynamically etching sheet metal, this phase I etching is got rid of silicon oxynitride layer and a part of second titanium nitride layer of the non-photoresistance area of coverage.
Form in the method for metal wire at above-mentioned dynamically etching sheet metal, this second stage etching is got rid of first titanium nitride layer of remaining second titanium nitride layer, aluminum-copper alloy layer and the part of the non-photoresistance area of coverage.
Form in the method for metal wire at above-mentioned dynamically etching sheet metal, this phase III etching is got rid of remaining first titanium nitride layer of the non-photoresistance area of coverage.
Form in the method for metal wire the phase III with existing dynamically etching sheet metal and adopt the etching phase ratio of set time, Time Calculation according to the second stage etching in the method for dynamically etching sheet metal formation metal wire of the present invention goes out the phase III etch period, and then carry out the phase III etching according to the phase III etch period that calculates, so can avoid metal wire etching deficiency or over etching.
Description of drawings
The method that dynamically etching sheet metal of the present invention forms metal wire is provided by following embodiment and accompanying drawing.
Fig. 1 is the cutaway view that dynamic etching forms the preceding metal level of metal wire;
Fig. 2 is the flow chart of the embodiment of the dynamically etching sheet metal of the present invention method that forms metal wire;
Fig. 3 finishes among Fig. 2 the cutaway view of metal level behind the step S20;
Fig. 4 finishes among Fig. 2 the cutaway view of metal level behind the step S21;
Fig. 5 finishes among Fig. 2 the cutaway view of metal level behind the step S22.
Embodiment
Below will the method for dynamically etching sheet metal formation metal wire of the present invention be described in further detail.
Referring to Fig. 2, dynamically etching sheet metal of the present invention forms the method for metal wire and at first carries out step S20, cross metal line pattern and leave the phase I etching of carrying out a set time on the wafer of photoresistance in photoetching, wherein, the scope of described set time is 15 to 30 seconds.Referring to Fig. 3, cooperate referring to Fig. 1, the phase I etching among the step S20 is got rid of silicon oxynitride layer 13 and a part of second titanium nitride layer 12 of non-photoresistance 3 areas of coverage.
Then continue step S21, carry out controlling the second stage etching of etching terminal according to the content of metal in the etching tail gas.In the present embodiment, when the content of metal in the tail gas by less changeable and during less than certain value, promptly arrived etching terminal, stop the second stage etching then.Referring to Fig. 4, cooperate referring to Fig. 1 and Fig. 3, the second stage etching among the step S21 is got rid of first titanium nitride layer 10 of remaining second titanium nitride layer 12, aluminum-copper alloy layer 11 and the part of non-photoresistance 3 areas of coverage.
Then continue step S22, the time of acquisition second stage etching.In the present embodiment, the time of second stage etching is 40 seconds.
Then continue step S23, go out the phase III etch period according to the Time Calculation of second stage etching.In the present embodiment, the phase III etch period is the time of second stage etching to multiply by a coefficient, and wherein, described coefficient is 0.4, is 16 seconds so drawn described phase III etch period.
Then continue step S24, carry out the phase III etching according to the phase III etch period.Referring to Fig. 5, cooperate referring to Fig. 1, Fig. 3 and Fig. 4, the phase III etching among the step S24 is got rid of remaining first titanium nitride layer 10 of non-photoresistance 3 areas of coverage.
In sum, the method of dynamically etching sheet metal formation metal wire of the present invention goes out the phase III etch period according to the Time Calculation of second stage etching, and then carry out the phase III etching according to the phase III etch period that calculates, so can avoid metal level etching deficiency or over etching.
Claims (9)
1. a dynamically etching sheet metal forms the method for metal wire, wherein, this metal level is deposited on the wafer, the photoresistance that has the photoetching and the metal line pattern of developing on this metal level, this method is carried out the phase I etching of a set time earlier, carry out controlling the second stage etching of etching terminal then according to the content of metal in the etching tail gas, it is characterized in that, this method then captures the time of second stage etching, Time Calculation according to the second stage etching goes out the phase III etch period afterwards, carries out the phase III etching according to the phase III etch period at last.
2. dynamically etching sheet metal as claimed in claim 1 forms the method for metal wire, it is characterized in that the time that this phase III etch period is the second stage etching be multiply by a coefficient.
3. dynamically etching sheet metal as claimed in claim 2 forms the method for metal wire, it is characterized in that this coefficient is 0.4.
4. dynamically etching sheet metal as claimed in claim 1 forms the method for metal wire, it is characterized in that the scope of this set time is 15 to 30 seconds.
5. dynamically etching sheet metal as claimed in claim 1 forms the method for metal wire, it is characterized in that this metal wire comprises first titanium nitride layer, aluminum-copper alloy layer, second titanium nitride layer and silicon oxynitride layer from bottom to up successively.
6. dynamically etching sheet metal as claimed in claim 5 forms the method for metal wire, it is characterized in that the thickness of this first titanium nitride layer, aluminum-copper alloy layer, second titanium nitride layer and silicon oxynitride layer is respectively 250 dusts, 4500 dusts, 250 dusts and 320 dusts.
7. dynamically etching sheet metal as claimed in claim 6 forms the method for metal wire, it is characterized in that this phase I etching is got rid of silicon oxynitride layer and a part of second titanium nitride layer of the non-photoresistance area of coverage.
8. dynamically etching sheet metal as claimed in claim 7 forms the method for metal wire, it is characterized in that, this second stage etching is got rid of first titanium nitride layer of remaining second titanium nitride layer, aluminum-copper alloy layer and the part of the non-photoresistance area of coverage.
9. dynamically etching sheet metal as claimed in claim 8 forms the method for metal wire, it is characterized in that this phase III etching is got rid of remaining first titanium nitride layer of the non-photoresistance area of coverage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100374669A CN100547744C (en) | 2007-02-13 | 2007-02-13 | A kind of dynamically etching sheet metal forms the method for metal wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100374669A CN100547744C (en) | 2007-02-13 | 2007-02-13 | A kind of dynamically etching sheet metal forms the method for metal wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101246824A true CN101246824A (en) | 2008-08-20 |
| CN100547744C CN100547744C (en) | 2009-10-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2007100374669A Expired - Fee Related CN100547744C (en) | 2007-02-13 | 2007-02-13 | A kind of dynamically etching sheet metal forms the method for metal wire |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107527822A (en) * | 2016-08-24 | 2017-12-29 | 浙江德汇电子陶瓷有限公司 | A kind of graphic method of nitride ceramics copper-clad plate and graphical nitride ceramics copper-clad plate |
-
2007
- 2007-02-13 CN CNB2007100374669A patent/CN100547744C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107527822A (en) * | 2016-08-24 | 2017-12-29 | 浙江德汇电子陶瓷有限公司 | A kind of graphic method of nitride ceramics copper-clad plate and graphical nitride ceramics copper-clad plate |
| CN107527822B (en) * | 2016-08-24 | 2019-10-25 | 浙江德汇电子陶瓷有限公司 | A kind of graphic method of nitride ceramics copper-clad plate and graphical nitride ceramics copper-clad plate |
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| Publication number | Publication date |
|---|---|
| CN100547744C (en) | 2009-10-07 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
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Effective date of registration: 20111117 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Granted publication date: 20091007 Termination date: 20190213 |