CN101241039B - Method and subassembly for testing two-sided chip photoelectric performance - Google Patents
Method and subassembly for testing two-sided chip photoelectric performance Download PDFInfo
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- CN101241039B CN101241039B CN2008100184086A CN200810018408A CN101241039B CN 101241039 B CN101241039 B CN 101241039B CN 2008100184086 A CN2008100184086 A CN 2008100184086A CN 200810018408 A CN200810018408 A CN 200810018408A CN 101241039 B CN101241039 B CN 101241039B
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Abstract
The invention discloses a component for testing double-faced chip photoelectric properties, comprising a to-be tested double-faced chip; one side of the double-faced chip is equipped with photic position; another side is equipped with pins. Said component also comprises a glass substrate and a printing circuit board. Said printing circuit board is equipped with through holes. The photic side of said to-be tested double-faced chip is fixedly connected to the glass substrate. The glass substrate is fixedly connected to the printing circuit board; said printing circuit board is equipped with the leading circuits. Each leading circuit is respectively equipped with testing electrodes. Each electrode of said to-be tested double-faced chip is respectively connected to corresponding transition circuits via golden line; each transition circuit is respectively connected to corresponding leading circuit via golden line. This invention also discloses a method for using the component to test double-faced chip photoelectric properties; said component not only can achieve photoelectric properties test of the double-faced chip, but also it endures accuracy and repeatability of the test.
Description
Technical field
The present invention relates to chip microcell optic test field, be specifically related to a kind of device and method of testing two-sided chip photoelectric performance.
Background technology
In semiconductor applications, need carry out the photoelectric properties test to the optical device of making.Usually, proving installation adopts the probe station structure, comprise positioning motor, test machine, probe, light source and holder part, light source and probe all are arranged on the front of device under test, light source irradiation is on device under test, probe is realized the measurement to the device photoelectric performance at the extraction electrode acupuncture treatment of device.In test single face chip, generally include following steps:
(1) chip to be measured is placed on the support, make the incident direction of alignment light source such as the light-receiving window of chip front side to be measured or photoelectric area sensor; By driving the positioning motor of probe station, regulate the position of probe and chip, make probe contact (i.e. acupuncture treatment) with the electrode pin of chip to be measured;
(2) after test machine obtains feedback signal from probe station, send the signal that begins to test, the test process of beginning photoelectric properties (as photocurrent).
But when the optical property of testing two-sided chip, there is bigger limitation in above-mentioned method of testing.
Because for two-sided device, need introduce light from one side, draw electrode from the another side acupuncture treatment, the Lights section and probe are arranged on one side in the common sniffer, so can't realize this function; In addition, if adopt probe, then there is following shortcoming directly to the chip acupuncture treatment:
(1) directly on device, has an acupuncture treatment with probe,, prick inaccurate easily if electrode is too little;
(2),, also can bring the problem of accuracy and repeatability because that the size of the orientation of each acupuncture treatment and acupuncture treatment strength has is different for same device;
(3) directly the electrode that destroys chip is understood in acupuncture treatment, and chip is caused damage.
Therefore, how realizing the back side outer electrode to the two sides device, and guarantee accurately and repeatable, is a difficult point of this area.
Summary of the invention
The object of the invention provides a kind of method and device of testing two-sided chip photoelectric performance, overcomes shortcoming of the prior art, realizes the performance test of two-sided chip, and guarantees the accuracy and the repeatability of test.
For achieving the above object, the technical solution used in the present invention is: a kind of method of testing two-sided chip photoelectric performance may further comprise the steps:
(1) makes up a test suite, described test suite comprises that one is provided with the printed circuit board (PCB) of drawing circuit of answering with the electrode pair of two-sided chip to be measured, the light receiving position perforate of the corresponding two-sided chip to be measured of printed circuit board (PCB), connect corresponding on each electrode make two-sided chip to be measured and the printed circuit board (PCB) by gold thread and draw the circuit electrical connection, test electrode is set respectively drawing the circuit end;
(2) above-mentioned test suite is placed on the testing jig, the hole of test light on printed circuit board (PCB) is radiated at the light receiving position of two-sided chip to be measured; Regulating each probe makes it to be electrically connected with each test electrode on the printed circuit board (PCB);
(3) send the test electric signal by external test circuit, realize the test of the photoelectric properties of two-sided chip to be measured.
Above, two-sided chip to be measured is connected on the printed circuit board (PCB), on the one hand, perforate on printed circuit board (PCB) makes test light can shine on the chip, on the other hand, connect by gold thread, electrode on the chip is connected on the bigger test electrode on the printed circuit board (PCB), thereby is convenient to realize being connected of probe and test electrode, can not damage chip to be measured.
Further technical scheme, in the described step (1), when making up test suite, two-sided chip to be measured is connected to the position of opening of printed circuit board (PCB) through a glass substrate, the transition circuit is set on glass substrate, make each transition circuit two ends connect the electrode of two-sided chip to be measured and the extraction electrode on the printed circuit board (PCB) respectively by the gold thread routing, thus being electrically connected of the counter electrode on the electrode of realizing described two-sided chip to be measured and the printed circuit board (PCB).Glass substrate is set, both can the photoreceiving surface position of chip to be measured be played a protective role, the via area on the printed circuit board (PCB) is strengthened, guarantee the normal irradiation of two-sided chip light receiving position, avoid printed circuit board (PCB) that test result is exerted an influence.
Realize the assembly of a kind of testing two-sided chip photoelectric performance of above-mentioned method of testing, comprise a two-sided chip to be measured, the one side of two-sided chip to be measured is provided with light receiving position, another side is furnished with pin, this assembly also comprises a glass substrate and a printed circuit board (PCB), and described printed circuit board (PCB) is provided with through hole, and the sensitive surface of described two-sided chip to be measured is fixedlyed connected with glass substrate, glass substrate is fixedlyed connected with printed circuit board (PCB), makes the light receiving position of two-sided chip to be measured be positioned at described through hole; Described glass substrate is provided with the transition circuit, and described printed circuit board (PCB) is provided with draws circuit, respectively draws and is respectively equipped with test electrode on the circuit; Each electrode of described two-sided chip to be measured connects through gold thread with corresponding transition circuit respectively, and each transition circuit connects through gold thread with the corresponding circuit of drawing respectively.
In the technique scheme, be the front with a side of correspondence two-sided chip sensitive surface to be measured, opposite side is the back side, then described printed circuit board (PCB) draw the described front of circuit communication and the back side, described test electrode is arranged on the front.This structure makes sensitive surface and test electrode be positioned at the same side, is convenient to adopt the probe station of existing structure to realize test.
In the technique scheme, the epoxy resin bonding through printing opacity between described two-sided chip to be measured and glass substrate is connected; Be connected through epoxy resin bonding between described glass substrate and printed circuit board (PCB).
In the technique scheme, be fixedly connected with support on the described printed circuit board (PCB).
In the technique scheme, glass substrate self can printing opacity, printed circuit board (PCB) is provided with through hole, when being bonded to the glass substrate that is stained with chip to be measured on the printed circuit board (PCB), make the light receiving position of two-sided chip to be measured be positioned at described through hole, thereby guarantee that test light can shine on the photoelectric area sensor of chip to be measured; Simultaneously, the circuit of drawing of the transition circuit that deposits on the pin at the two-sided chip to be measured back side, the glass substrate and the PCB circuit board that is provided with through hole is connected by gold thread electricity, and be respectively equipped with test electrode on the circuit respectively drawing, can use the probe that is positioned at chip front side to be measured top to contact, thereby realize test two-sided chip with test electrode.
Because the utilization of technique scheme, the present invention compared with prior art has following advantage:
The present invention makes optical energy irradiation on the photoelectric area sensor of chip front side to be measured owing to adopted glass substrate, be provided with the printed circuit board (PCB) of through hole; The electrode at the two-sided chip back side is guided to the front; simultaneously (electrode diameter＜100um) is drawn out to big test electrode (on the electrode diameter＞1mm) electrode very little on the chip; not only realize test to two-sided chip; also protect the electrode of chip to be measured simultaneously, guaranteed the repeatability and the accuracy of test.
Description of drawings
Fig. 1 is the synoptic diagram of the assembly of testing two-sided chip photoelectric performance among the embodiment one;
Fig. 2 is the synoptic diagram of whole test system among the embodiment one;
Fig. 3 is the diagrammatic cross-section of assembly and support among the embodiment one;
Fig. 4 is the assembling synoptic diagram of a kind of assembly of embodiment;
Fig. 5 is the enlarged diagram of glass substrate among the embodiment one.
Wherein: 1, two-sided chip to be measured; 2, glass substrate; 3, printed circuit board (PCB); 4, probe; 5, gold thread; 6, test electrode.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment one, shown in accompanying drawing 1～4:
A kind of method of testing two-sided chip photoelectric performance may further comprise the steps:
(1) makes up a test suite, described test suite comprises that one is provided with the printed circuit board (PCB) of drawing circuit 3 of answering with the electrode pair of two-sided chip 1 to be measured, the light receiving position perforate of printed circuit board (PCB) 3 corresponding two-sided chips 1 to be measured, connect corresponding on each electrode of making two-sided chip 1 to be measured and the printed circuit board (PCB) 3 by gold thread 5 and draw the circuit electrical connection, test electrode 6 is set respectively drawing the circuit end;
(2) above-mentioned test suite is placed on the testing jig, the hole of test light on printed circuit board (PCB) is radiated at the light receiving position of two-sided chip to be measured; Regulating each probe 4 makes it to be electrically connected with each test electrode 6 on the printed circuit board (PCB);
(3) send the test electric signal by external test circuit, realize the test of the photoelectric properties of two-sided chip to be measured.
Above, two-sided chip 1 to be measured is connected to the position of opening of printed circuit board (PCB) 3 through a glass substrate 2, the transition circuit is set on glass substrate 2, make each transition circuit two ends connect the electrode of two-sided chip to be measured and the extraction electrode on the printed circuit board (PCB) respectively by gold thread 5 routings, thus being electrically connected of the counter electrode on the electrode of realizing described two-sided chip to be measured and the printed circuit board (PCB).
The assembly of present embodiment, comprise a two-sided chip 1 to be measured, the one side of two-sided chip to be measured is provided with light receiving position, another side is furnished with pin, this assembly also comprises a glass substrate 2 and a printed circuit board (PCB) 3, and described printed circuit board (PCB) 3 is provided with through hole, and the sensitive surface of described two-sided chip 1 to be measured is fixedlyed connected with glass substrate 2, glass substrate 2 is fixedlyed connected with printed circuit board (PCB) 3, makes the light receiving position of two-sided chip to be measured be positioned at described through hole; Described glass substrate 2 is provided with the transition circuit, and described printed circuit board (PCB) 3 is provided with draws circuit, respectively draws and is respectively equipped with test electrode 6 on the circuit; Each electrode of described two-sided chip to be measured 4 connects through gold thread 5 with corresponding transition circuit respectively, and each transition circuit connects through gold thread 5 with the corresponding circuit of drawing respectively.
Above, be the front with a side of correspondence two-sided chip 1 sensitive surface to be measured, opposite side is the back side, then described printed circuit board (PCB) 3 draw the described front of circuit communication and the back side, described test electrode 6 is arranged on the front.This structure makes sensitive surface and test electrode be positioned at the same side, is convenient to adopt the probe station of existing structure to realize test.2 epoxy resin bondings through printing opacity of described two-sided chip to be measured 1 and glass substrate are connected; Described glass substrate 2 is connected through epoxy resin bonding with 3 of printed circuit board (PCB)s; Be fixedly connected with support on the described printed circuit board (PCB) 3.
Because glass substrate self can printing opacity, printed circuit board (PCB) is provided with through hole, when being bonded to the glass substrate that is stained with chip to be measured on the printed circuit board (PCB), make the light receiving position of two-sided chip to be measured be positioned at described through hole, thereby guarantee that test light can shine on the photoelectric area sensor of chip to be measured; Simultaneously, the circuit of drawing of the transition circuit that deposits on the pin at the two-sided chip to be measured back side, the glass substrate and the PCB circuit board that is provided with through hole is connected by gold thread electricity, and be respectively equipped with test electrode on the circuit respectively drawing, can use the probe that is positioned at chip front side to be measured top to contact, thereby realize test two-sided chip with test electrode.
Claims (6)
1. the method for a testing two-sided chip photoelectric performance is characterized in that:
(1) makes up a test suite, described test suite comprises that one is provided with the printed circuit board (PCB) of drawing circuit of answering with the electrode pair of two-sided chip to be measured, the light receiving position perforate of the corresponding two-sided chip to be measured of printed circuit board (PCB), connect corresponding on each electrode make two-sided chip to be measured and the printed circuit board (PCB) by gold thread and draw the circuit electrical connection, test electrode is set respectively drawing the circuit end;
(2) above-mentioned test suite is placed on the testing jig, the hole of test light on printed circuit board (PCB) is radiated at the light receiving position of two-sided chip to be measured; Regulating each probe makes it to be electrically connected with each test electrode on the printed circuit board (PCB);
(3) send the test electric signal by external test circuit, realize the test of the photoelectric properties of two-sided chip to be measured.
2. the method for testing two-sided chip photoelectric performance according to claim 1, it is characterized in that: in the described step (1), when making up test suite, two-sided chip to be measured is connected to the position of opening of printed circuit board (PCB) through a glass substrate, the transition circuit is set on glass substrate, make each transition circuit two ends connect the electrode of two-sided chip to be measured and the extraction electrode on the printed circuit board (PCB) respectively by the gold thread routing, thus being electrically connected of the counter electrode on the electrode of realizing described two-sided chip to be measured and the printed circuit board (PCB).
3. the assembly of a testing two-sided chip photoelectric performance, comprise a two-sided chip to be measured, the one side of two-sided chip to be measured is provided with light receiving position, another side is furnished with pin, it is characterized in that: this assembly also comprises a glass substrate and a printed circuit board (PCB), and described printed circuit board (PCB) is provided with through hole, and the sensitive surface of described two-sided chip to be measured is fixedlyed connected with glass substrate, glass substrate is fixedlyed connected with printed circuit board (PCB), makes the light receiving position of two-sided chip to be measured be positioned at described through hole; Described glass substrate is provided with the transition circuit, and described printed circuit board (PCB) is provided with draws circuit, respectively draws and is respectively equipped with test electrode on the circuit; Each electrode of described two-sided chip to be measured connects through gold thread with corresponding transition circuit respectively, and each transition circuit connects through gold thread with the corresponding circuit of drawing respectively.
4. according to the assembly of the described testing two-sided chip photoelectric performance of claim 3, it is characterized in that: the side with correspondence two-sided chip sensitive surface to be measured is the front, opposite side is the back side, then described printed circuit board (PCB) draw the described front of circuit communication and the back side, described test electrode is arranged on the front.
5. according to the assembly of the described testing two-sided chip photoelectric performance of claim 3, it is characterized in that: the epoxy resin bonding through printing opacity between described two-sided chip to be measured and glass substrate is connected; Be connected through epoxy resin bonding between described glass substrate and printed circuit board (PCB).
6. according to the assembly of the described testing two-sided chip photoelectric performance of claim 3, it is characterized in that: be fixedly connected with support on the described printed circuit board (PCB).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100184086A CN101241039B (en) | 2008-02-01 | 2008-02-01 | Method and subassembly for testing two-sided chip photoelectric performance |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100184086A CN101241039B (en) | 2008-02-01 | 2008-02-01 | Method and subassembly for testing two-sided chip photoelectric performance |
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| Publication Number | Publication Date |
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| CN101241039A CN101241039A (en) | 2008-08-13 |
| CN101241039B true CN101241039B (en) | 2010-04-14 |
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| CN2008100184086A Expired - Fee Related CN101241039B (en) | 2008-02-01 | 2008-02-01 | Method and subassembly for testing two-sided chip photoelectric performance |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8389926B2 (en) * | 2009-09-14 | 2013-03-05 | Star Technologies Inc. | Testing apparatus for light-emitting devices with a design for a removable sensing module |
| CN103021985B (en) * | 2011-09-21 | 2015-07-22 | 中国科学院上海微系统与信息技术研究所 | Electric leading-out structure of sensor chip to be detected and application thereof |
| CN103627788A (en) * | 2013-08-21 | 2014-03-12 | 中山大学达安基因股份有限公司 | Preparation method for biochip of electrochemical gene sensor |
| CN109559667B (en) * | 2019-01-04 | 2022-05-27 | 京东方科技集团股份有限公司 | Array substrate, testing method thereof, display panel and display device |
| CN110579699A (en) * | 2019-09-20 | 2019-12-17 | 武汉电信器件有限公司 | Chip testing device |
| CN111653497A (en) * | 2020-06-12 | 2020-09-11 | 长江存储科技有限责任公司 | Test structure and test method |
| CN112394280B (en) * | 2020-11-17 | 2024-05-28 | 广州市力驰微电子科技有限公司 | Testing device for power chip production |
| CN114088987A (en) * | 2021-08-31 | 2022-02-25 | 深圳市麦科捷科技有限公司 | Novel electrical testing equipment device and testing method |
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| CN2395683Y (en) * | 1999-12-06 | 2000-09-13 | 王仁刚 | Sectional sterilizing dishwasher cabinet |
| US6169414B1 (en) * | 1997-06-30 | 2001-01-02 | Canon Kabushiki Kaisha | Measuring apparatus and method for measuring characteristic of solar cell |
| CN1952666A (en) * | 2005-10-20 | 2007-04-25 | 中国科学院半导体研究所 | Clamp for testing semiconductor photoelectronic device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6169414B1 (en) * | 1997-06-30 | 2001-01-02 | Canon Kabushiki Kaisha | Measuring apparatus and method for measuring characteristic of solar cell |
| CN2395683Y (en) * | 1999-12-06 | 2000-09-13 | 王仁刚 | Sectional sterilizing dishwasher cabinet |
| CN1952666A (en) * | 2005-10-20 | 2007-04-25 | 中国科学院半导体研究所 | Clamp for testing semiconductor photoelectronic device |
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Owner name: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SI Free format text: FORMER OWNER: SUZHOU NANO TECHNIQUE + NANO BIONIC RESEARCH INST. Effective date: 20100928 |
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Effective date of registration: 20100928 Address after: 215123 Suzhou Industrial Park, Jiangsu Province, if the waterway No. 398, No. Patentee after: Suzhou Institute of Nano-Tech and Bionics (SINANO), Chinese Academy of Sciences Address before: 215123 Graduate School of Suzhou graduate school, 150 Yan Ai Road, Suzhou Industrial Park, Jiangsu, Suzhou, B-513 Patentee before: Suzhou Nano Technique & Nano Bionic Research Inst. |
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