CN101241030A - MOS force sensitive sensor - Google Patents
MOS force sensitive sensor Download PDFInfo
- Publication number
- CN101241030A CN101241030A CNA2008101016001A CN200810101600A CN101241030A CN 101241030 A CN101241030 A CN 101241030A CN A2008101016001 A CNA2008101016001 A CN A2008101016001A CN 200810101600 A CN200810101600 A CN 200810101600A CN 101241030 A CN101241030 A CN 101241030A
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- silicon
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- pressure
- mos transistor
- cup
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 230000001419 dependent effect Effects 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 238000013459 approach Methods 0.000 claims description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical class [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 150000003376 silicon Chemical class 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
MOS force sensor belongs to the field of sensor technology, being characterized in: comprising a structural chip and a sealed cover board. A vacuum silicon cup is formed on the structural chip; Silicon sheets with original thickness are around the cup; a silicon film is at the middle of the cup; edge of the silicon film configures stress sensitive integral section; the said section uses the MOS transistor and voltage-sensitive resistance to form differential geminate transistors; when the external force acts on silicon film, the MOS transistor trench moving rate and resistance bar moving rate will be changed by stress; when the structural chip is connected to [the] upper and lower bond of the sealed cover board are connected, voltage difference output by the said difference geminate transistors has linear relation with the stress under the effect of a constant voltage resource. This invention has the advantages of simple technique, stability and great linearity, high sensitivity, low power consumption, adjustable parameter.
Description
Technical field
The MOS pressure transducer belongs to the MOS device and pressure transducer is made the field.
Background technology
By the principle of work branch, pressure transducer mainly comprises three kinds of condenser type, resonant mode and pressure resistance types.Condenser type and resonance type pressure sensor sensitivity are higher, but the manufacture craft more complicated.Than preceding two class devices, the piezoresistive pressure sensor manufacture craft is simple, and linearity height is used widely.
The present invention is based on the quick effect of power of MOS transistor, proposed a kind of novel MOS force-sensing sensor, this sensor is compared with the most widely used pressure resistance type force-sensing sensor at present, advantage such as inherited on the one hand that manufacture craft is simple, stability and the linearity are good; This on the other hand novel MOS force-sensing sensor has higher sensitivity, lower power consumption and performance parameter is adjustable, and having more wide should have prospect.
Summary of the invention
The purpose of this invention is to provide a kind of highly sensitive, low in energy consumption, making is simple, reliable and stable, performance is adjustable pressure transducer.
The invention is characterized in: contain structure chip and seal cover board, wherein, the structure chip is positioned at the upper strata of described sensor, the centre is an inverted silicon cup that is made of cavity, the longitudinal section of described silicon cup is trapezoidal, be the body silicon of original thickness all around, the centre is the silicon fiml that approaches, this silicon fiml is quadrilateral, the stress sensitive concentration zones that this tetragonal four edges is a silicon cup, make MOS transistor respectively and voltage dependent resistor (VDR) constitutes a differential pair tube at two mid points on vis-a-vis two limits, constitute pressure-active element, this differential pair tube adopts the power supply mode that adds constant pressure source between the non-earth terminal of the source of two MOS transistor end and two voltage dependent resistor (VDR)s, when having pressure to act on the silicon fiml of described structure chip centre, can cause the variation of MOS transistor channel mobility and voltage dependent resistor (VDR) mobility, make that the voltage difference and the pressure of differential pair tube output are linear; Seal cover board is positioned at the lower floor of described sensor, is tightly connected with the bonding mode with described structure chip.Described pressure-active element is across silicon fiml and body silicon juncture area or in silicon fiml one side of junctional area.Described silicon fiml is square or circular or rectangle or polygon.Described voltage dependent resistor (VDR) is made of silicon single crystal or polysilicon or amorphous silicon or pressure-sensitive metal material, and the grid of described MOS transistor is made of aluminium or polycrystalline silicon material.
The output of this pressure transducer when impressed voltage is certain and force value directly related, have and make simple, stability and the linearity is good, highly sensitive, low in energy consumption, performance is adjustable advantage.
Description of drawings
Fig. 1 .MOS pressure sensor structure schematic diagram (square film): (a) vertical view; (b) sectional view; Wherein, 1.MOS transistor, 2. voltage dependent resistor (VDR), 3. pressure chamber, 4. silicon substrate.
Fig. 2 .MOS pressure sensor structure schematic diagram (diaphragm): (a) vertical view; (b) sectional view; Wherein, 1.MOS transistor, 2. voltage dependent resistor (VDR), 3. pressure chamber, 4. silicon substrate.
Fig. 3 .MOS pressure sensor circuit schematic diagram.
The manufacture craft process flow diagram of Fig. 4 .MOS pressure transducer; 1.Si
3N
4, 2.SiO
2, 3.Si substrate, 4.MOS transistor, 5. voltage dependent resistor (VDR), 6. vacuum pressure chamber, 7.Au/Ti, 8.Si seal cover board.
Embodiment
The present invention includes two kinds of force sensing elements, MOS transistor and voltage dependent resistor (VDR), they all are based on the voltage-sensitive effect principle of silicon materials, do the time spent as pressure, the channel mobility of MOS transistor and the resistance of resistance change, change by the output voltage (or electric current) that detects the voltage-sensitive bridge that constitutes by MOS transistor and resistance, just can predict the variation of pressure.
Fig. 1 is the structure principle chart of MOS transistor pressure transducer, and sensor is made of double-layer structure, is the structure chip above, is seal cover board below.In the middle of the structure chip a square silicon cup being arranged, is circle thickness body silicon all around, and the centre is a silicon thin film.Two presser sensor MOS transistor M1, M2 and two presser sensor resistance R 1, R2 are arranged on silicon cup, and they are distributed in the stress sensitive concentration zones of structure of silicon cup, their stress sensitives to being produced by pressure.
Fig. 2 is another implementation of present embodiment, and integrated sensor is made of double-layer structure, is the structure chip above, is seal cover board below.The silicon cup of a circle is arranged in the middle of the structure chip, is original thickness body silicon all around, and the centre is a silicon thin film.Two presser sensor MOS transistor M1, M2 and two presser sensor resistance R 1, R2 are arranged on silicon cup, and they are distributed in the stress sensitive concentration zones of structure of silicon cup, their stress sensitives to being produced by pressure.
Fig. 3 is the circuit theory diagrams of MOS transistor pressure transducer, and the electric bridge that sensor utilizes MOS transistor and resistance to constitute detects input signal, and electric bridge adopts the constant pressure source power supply mode.Under pressure, one of its channel mobility of MOS transistor M1 and M2 increases by one and reduces, and the resistance value of voltage dependent resistor (VDR) R1 and R2 also is that one of an increase reduces.Branch arm output has a difference Vout, and we just can come detected pressures by the value of measuring Vout.Use the MOS force-sensing sensor of bridge structure shown in Figure 3 aspect overall performance, also to have great advantage.This MOS strain gauge has higher sensitivity and lower power consumption on the one hand; On the other hand, the sensitivity of this sensor and power consumption can be regulated easily by technological parameter (comprising the breadth length ratio of MOS transistor and the resistance of voltage dependent resistor (VDR) etc.) and electrical parameter (grid voltage of MOS transistor etc.).
Fig. 4 is the manufacture craft process flow diagram of MOS force-sensing sensor, adopts monocrystalline silicon to inject the bulk silicon technological of resistance.Make the process program of circuit behind this MOS strain gauge employing elder generation making silicon fiml.Fig. 4 (a) original material is prepared, and adopts two silicon chips of throwing as substrate; Fig. 4 (b) adopts bulk silicon technological corrosion silicon cup, forms the presser sensor structure; Fig. 4 (c) adopts MOS technology to make pressure-active element, forms pressure-sensitive circuit; Fig. 4 (d) adopts bonding technology to form the pressure reference cavity, finishes the MOS force-sensing sensor and makes.
Claims (4)
1.MOS force-sensing sensor, it is characterized in that, contain structure chip and seal cover board, wherein, the structure chip is positioned at the upper strata of described sensor, the centre is an inverted silicon cup that is made of cavity, the longitudinal section of described silicon cup is trapezoidal, be the body silicon of original thickness all around, the centre is the silicon fiml that approaches, this silicon fiml is quadrilateral, the stress sensitive concentration zones that this tetragonal four edges is a silicon cup, make MOS transistor respectively and voltage dependent resistor (VDR) constitutes a differential pair tube at two mid points on vis-a-vis two limits, constitute pressure-active element, this differential pair tube adopts the power supply mode that adds constant pressure source between the non-earth terminal of the source of two MOS transistor end and two voltage dependent resistor (VDR)s, when having pressure to act on the silicon fiml of described structure chip centre, can cause the variation of MOS transistor channel mobility and voltage dependent resistor (VDR) mobility, make that the voltage difference and the pressure of differential pair tube output are linear; Seal cover board is positioned at the lower floor of described sensor, is tightly connected with the bonding mode with described structure chip.
2. MOS force-sensing sensor according to claim 1 is characterized in that: described pressure-active element is across silicon fiml and body silicon juncture area or in silicon fiml one side of junctional area.
3. MOS force-sensing sensor according to claim 1 is characterized in that: described silicon fiml is square or circular or rectangle or polygon.
4. MOS force-sensing sensor according to claim 1 is characterized in that: described voltage dependent resistor (VDR) is made of silicon single crystal or polysilicon or amorphous silicon or pressure-sensitive metal material, and the grid of described MOS transistor is made of aluminium or polycrystalline silicon material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101016001A CN101241030A (en) | 2008-03-10 | 2008-03-10 | MOS force sensitive sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101016001A CN101241030A (en) | 2008-03-10 | 2008-03-10 | MOS force sensitive sensor |
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| Publication Number | Publication Date |
|---|---|
| CN101241030A true CN101241030A (en) | 2008-08-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008101016001A Pending CN101241030A (en) | 2008-03-10 | 2008-03-10 | MOS force sensitive sensor |
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| CN (1) | CN101241030A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102243126A (en) * | 2011-04-14 | 2011-11-16 | 黑龙江大学 | Nano silicon thin film transistor pressure sensor |
| CN102491256A (en) * | 2011-12-27 | 2012-06-13 | 上海先进半导体制造股份有限公司 | Composite sensor with multiple pressure sensitive elements and its manufacturing method |
| CN104101763A (en) * | 2013-04-03 | 2014-10-15 | 中芯国际集成电路制造(上海)有限公司 | Sensor on chip |
| CN104779249A (en) * | 2015-04-03 | 2015-07-15 | 巫立斌 | Structure and preparation method of strain membrane |
| CN108604148A (en) * | 2015-12-31 | 2018-09-28 | 华为技术有限公司 | A kind of pressure-responsive device and manufacturing method |
| CN110998265A (en) * | 2017-08-14 | 2020-04-10 | 阿自倍尓株式会社 | Torque detector and method for manufacturing torque detector |
| CN113473339A (en) * | 2021-05-12 | 2021-10-01 | 钰太芯微电子科技（上海）有限公司 | Micro-electromechanical microphone integrated with pressure sensor and electronic equipment |
| CN114812877A (en) * | 2021-01-27 | 2022-07-29 | 英飞凌科技股份有限公司 | Stress sensor and method for determining a gradient-compensated mechanical stress component |
| CN114964599A (en) * | 2022-06-14 | 2022-08-30 | 南京高华科技股份有限公司 | Micromechanical pressure sensor and method for producing the same |
-
2008
- 2008-03-10 CN CNA2008101016001A patent/CN101241030A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102243126A (en) * | 2011-04-14 | 2011-11-16 | 黑龙江大学 | Nano silicon thin film transistor pressure sensor |
| CN102491256A (en) * | 2011-12-27 | 2012-06-13 | 上海先进半导体制造股份有限公司 | Composite sensor with multiple pressure sensitive elements and its manufacturing method |
| CN104101763A (en) * | 2013-04-03 | 2014-10-15 | 中芯国际集成电路制造(上海)有限公司 | Sensor on chip |
| CN104101763B (en) * | 2013-04-03 | 2017-11-14 | 中芯国际集成电路制造(上海)有限公司 | A kind of sensor-on-chip |
| CN104779249A (en) * | 2015-04-03 | 2015-07-15 | 巫立斌 | Structure and preparation method of strain membrane |
| CN104779249B (en) * | 2015-04-03 | 2018-01-02 | 泰州市齐大涂料助剂有限公司 | The structure and preparation method of a kind of strain film |
| CN108604148A (en) * | 2015-12-31 | 2018-09-28 | 华为技术有限公司 | A kind of pressure-responsive device and manufacturing method |
| CN108604148B (en) * | 2015-12-31 | 2021-03-05 | 华为技术有限公司 | Pressure-sensitive device and manufacturing method |
| CN110998265A (en) * | 2017-08-14 | 2020-04-10 | 阿自倍尓株式会社 | Torque detector and method for manufacturing torque detector |
| CN110998265B (en) * | 2017-08-14 | 2021-12-21 | 阿自倍尓株式会社 | Torque detector and method for manufacturing torque detector |
| CN114812877A (en) * | 2021-01-27 | 2022-07-29 | 英飞凌科技股份有限公司 | Stress sensor and method for determining a gradient-compensated mechanical stress component |
| US12085462B2 (en) | 2021-01-27 | 2024-09-10 | Infineon Technologies Ag | Transistor-based stress sensor and method for determining a gradient-compensated mechanical stress component |
| CN113473339A (en) * | 2021-05-12 | 2021-10-01 | 钰太芯微电子科技（上海）有限公司 | Micro-electromechanical microphone integrated with pressure sensor and electronic equipment |
| CN113473339B (en) * | 2021-05-12 | 2023-03-28 | 钰太芯微电子科技（上海）有限公司 | Micro-electromechanical microphone integrated with pressure sensor and electronic equipment |
| CN114964599A (en) * | 2022-06-14 | 2022-08-30 | 南京高华科技股份有限公司 | Micromechanical pressure sensor and method for producing the same |
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Open date: 20080813 |