CN101240435A - Plating self-welding method for three-dimensional micro-electrode array - Google Patents
Plating self-welding method for three-dimensional micro-electrode array Download PDFInfo
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- CN101240435A CN101240435A CNA200810034328XA CN200810034328A CN101240435A CN 101240435 A CN101240435 A CN 101240435A CN A200810034328X A CNA200810034328X A CN A200810034328XA CN 200810034328 A CN200810034328 A CN 200810034328A CN 101240435 A CN101240435 A CN 101240435A
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Abstract
The invention relates to a method for electroplating self-welding a three-dimensional microelectrode, belonging to the field of microelectrode preparation technology. The steps comprises: putting the microelectrode through a metal micropore, and fixing on a slot; and electroplating the metal micropore to lessen the metal micropore, until the metal micropore and the microelectrode being combined together, so that self-welding of metal micropore and the microelectrode is realized. The welding method can easily realize three-dimensional welding of metal microelectrode array and metal micropore, the effect is good, the method is easy and has low cost.
Description
Technical field
The invention belongs to the microelectrode preparing technical field, be specifically related to a kind of method that is used to weld three-dimensional micro-electrode array.
Background technology
Along with the development of micro-nano-technology, numerous micro-nano electron devices have obtained research and development.Have in these micro devices much and need carry out electricity interlinkage, need the microwelding technology to go between with the outside, for example, ultra-sonic welded, pressure welding, little gentle interconnection technique (MicroFlex Interconnection technnology).But microelectrode array is carried out the solid welding with these methods, difficulty is bigger, for example, metal needle long several centimetres, diameter hundreds of micron is welded in the metal micro-holes of spacing hundreds of micron, just be difficult to realize electricity interlinkage with traditional welding process, and these traditional welding processs all need specific welding instrument, and some welding instrument is expensive complicated.
Summary of the invention
The objective of the invention is to propose the welding process of the three-dimensional micro-electrode array that a kind of process implementing is convenient, welding effect is good.
The welding process of the three-dimensional micro-electrode array that the present invention proposes, be that microelectrode is passed metal micro-holes, and be fixed in the corresponding slot, in metal micro-holes, electroplate corresponding metal, the diameter of metal micro-holes is reduced gradually, final and metal microelectrode combines, thereby realizes the welding certainly of microelectrode array and metal micro-holes.The inventive method can easily realize the solid welding of metal microelectrode array and metal micro-holes, and effect is fine, and method is simple, and cost is also lower.Its concrete operations step is as follows:
(a) fixing metal microelectrode and the insulcrete that metal micro-holes is arranged on the insulation slot allow metal microelectrode pass metal micro-holes, and mutually bonding with the adhesive tape of insulation slot bottom, as shown in Figure 1;
(b) allow in the metal microelectrode and metal micro-holes immersion plating solution that fixes, the integration interconnection line of all metal micro-holes is received the negative electrode of electroplating power supply, select the corresponding metal plate to make anode;
(c) metal micro-holes in the insulcrete is electroplated, when the metal microelectrode in being exposed to electroplate liquid also plated metal, the plating of just having finished microelectrode array was from welding.In order to strengthen the reliability of welding, can spend plating for some time, galvanized pattern such as Fig. 2; In the electroplating process, galvanized technical parameter can be determined according to the area and the quantity of electroplating hole, electroplates under the normal situation, checked galvanized effect every 20~30 minutes.
(d) from electroplate liquid, take out good metal microelectrode and the insulcrete of plating welding, clean with flushing with clean water, and dry up with nitrogen, successively with acetone and alcohol ultrasonic cleaning, remove the adhesive tape of slot bottom, the insulcrete of metal micro-holes is separated with slot, promptly obtain the product that microelectrode array and metal micro-holes weld together, the result as shown in Figure 3.
Description of drawings
Fig. 1 is that little metal aperture and microelectrode are fixed on the diagrammatic cross-section on the slot.
Fig. 2 is for electroplating the diagrammatic cross-section from welding back weld.
Fig. 3 is for electroplating from the metal micro-holes that welds together and microelectrode and diagrammatic cross-section after fixed slot is separated.
The pictorial diagram of Fig. 4 for electroplating the flexible interconnect line, A is the overall diagram of interconnection line, B is the metallic hole array part.
Number in the figure: 1 is metal microelectrode, and 2 for there being the insulcrete of metal micro-holes array, and 3 is metal micro-holes, and 4 are the insulation slot, and 5 is insulation tape.
Embodiment
The microelectrode of welding long 4mm, diameter 0.2mm in little metallic hole array of as shown in Figure 4 flexible interconnect line, technical process is as follows:
(a) part that the metal micro-holes array is arranged in the flexible interconnect line and microelectrode are fixed on the corresponding insulation slot, as Fig. 1, the microwell array in the slot is corresponding with the little metal aperture in the flexible interconnect line, is 4 * 8 array, and diameter is 0.25 micron;
(b) smear one deck silver slurry at the interface of flexible interconnect line, realize the electricity interlinkage of whole little metal aperture, and be connected to the negative electrode of electroplating power supply, guarantee that whole little metal aperture electroplate simultaneously; Slot is partly immersed copper electroplating liquid together with the microelectrode above fixing and little metallic hole array of flexible interconnect line; Select copper coin as galvanic anode, and be connected with the anode of electroplating power supply; Open the rotor in the plating tank;
(c) open electroplating power supply, the plating condition is 0.01A, 1000Hz; Checked galvanized situation every 25 minutes, the whole plated with copper of microelectrode in being exposed at electroplate liquid, in order to increase welding reliability, can the proper extension electroplating time, but prevent that the other galvanized copper of little metal aperture from linking together, and electroplates weld such as Fig. 5;
(d) from electroplate liquid, take out good microelectrode of plating welding and insulation slot, clean with flushing with clean water, and dry up with nitrogen, successively with acetone and alcohol ultrasonic cleaning, remove the adhesive tape of slot bottom, make the microelectrode array that welds together separate the result who obtains such as Fig. 6 with slot with the flexible interconnect line.
Claims (2)
1, a kind of plating from the method for welding the three-diemsnional electrode array, it is characterized in that concrete steps are as follows: be that microelectrode is passed metal micro-holes, and be fixed in the corresponding slot, in metal micro-holes, electroplate corresponding metal, the diameter of metal micro-holes is reduced gradually, final and metal microelectrode combines, thereby realizes the welding certainly of microelectrode array and metal micro-holes.
2, method according to claim 1 is characterized in that the concrete operations step is as follows:
(a) fixing metal microelectrode and the insulcrete that metal micro-holes is arranged on the insulation slot allow metal microelectrode pass metal micro-holes, and the adhesive tape bonding bottom the insulation slot;
(b) in microelectrode that fixes and the metal micro-holes immersion plating solution, the integration interconnection line of all metal micro-holes is received the negative electrode of electroplating power supply, select metal sheet to make anode;
(c) the little metal aperture in the insulcrete is electroplated, area and quantity according to electroplating hole are determined electroplating parameter, checked galvanized effect every 20~30 minutes, when the microelectrode in being exposed to electroplate liquid also plated metal, the plating of promptly finishing microelectrode array was from welding;
(d) welding good microelectrode and insulcrete are electroplated in taking-up from electroplate liquid, and be clean with flushing with clean water, and dry up with nitrogen, successively uses acetone and alcohol ultrasonic cleaning, removes the fixedly adhesive tape of usefulness, separates with slot.
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CN200810034328XA CN101240435B (en) | 2008-03-06 | 2008-03-06 | Plating self-welding method for three-dimensional micro-electrode array |
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CN200810034328XA CN101240435B (en) | 2008-03-06 | 2008-03-06 | Plating self-welding method for three-dimensional micro-electrode array |
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CN101240435A true CN101240435A (en) | 2008-08-13 |
CN101240435B CN101240435B (en) | 2011-02-09 |
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Cited By (9)
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CN103179781A (en) * | 2013-01-06 | 2013-06-26 | 中国电子科技集团公司第十研究所 | Method for improving thermal conduction capability of printed board of surface-mounted device |
CN103342336A (en) * | 2013-06-27 | 2013-10-09 | 哈尔滨工业大学 | Preparation method of three-dimensional ordered macropore microelectrode |
CN104459857A (en) * | 2014-11-25 | 2015-03-25 | 安徽华东光电技术研究所 | Comb-shaped grating manufacturing method |
CN104532304A (en) * | 2014-12-16 | 2015-04-22 | 安徽工业大学 | Welding method of metal glass |
CN104883812A (en) * | 2015-06-01 | 2015-09-02 | 安徽禄讯电子科技有限公司 | Method for improving thermal conduction capacity of printed board of surface-mount device |
CN105101618A (en) * | 2015-07-23 | 2015-11-25 | 合肥扬帆通信元器件有限公司 | Method for improving heat conduction capability of surface-mounted device printed board |
CN106048667A (en) * | 2016-07-19 | 2016-10-26 | 哈尔滨工业大学深圳研究生院 | Connecting method based on electroplating and applied to same metal or dissimilar metal |
CN106646048A (en) * | 2016-12-23 | 2017-05-10 | 中国科学院深圳先进技术研究院 | Preparation method of microelectrode array |
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US7036220B2 (en) * | 2003-12-18 | 2006-05-02 | The Regents Of The University Of California | Pin-deposition of conductive inks for microelectrodes and contact via filling |
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2008
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Cited By (13)
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CN102237530A (en) * | 2010-04-22 | 2011-11-09 | 通用汽车环球科技运作有限责任公司 | Electroformed bipolar plates for fuel cells |
US9406948B2 (en) | 2010-04-22 | 2016-08-02 | GM Global Technology Operations LLC | Electroformed bipolar plates for fuel cells |
US8597858B2 (en) | 2010-04-22 | 2013-12-03 | GM Global Technology Operations LLC | Electroformed bipolar plates for fuel cells |
CN102237530B (en) * | 2010-04-22 | 2014-12-17 | 通用汽车环球科技运作有限责任公司 | Electroformed bipolar plates for fuel cells |
CN103179781A (en) * | 2013-01-06 | 2013-06-26 | 中国电子科技集团公司第十研究所 | Method for improving thermal conduction capability of printed board of surface-mounted device |
CN103342336B (en) * | 2013-06-27 | 2016-03-16 | 哈尔滨工业大学 | A kind of preparation method of three-dimensional ordered macroporous microelectrode |
CN103342336A (en) * | 2013-06-27 | 2013-10-09 | 哈尔滨工业大学 | Preparation method of three-dimensional ordered macropore microelectrode |
CN104459857A (en) * | 2014-11-25 | 2015-03-25 | 安徽华东光电技术研究所 | Comb-shaped grating manufacturing method |
CN104532304A (en) * | 2014-12-16 | 2015-04-22 | 安徽工业大学 | Welding method of metal glass |
CN104883812A (en) * | 2015-06-01 | 2015-09-02 | 安徽禄讯电子科技有限公司 | Method for improving thermal conduction capacity of printed board of surface-mount device |
CN105101618A (en) * | 2015-07-23 | 2015-11-25 | 合肥扬帆通信元器件有限公司 | Method for improving heat conduction capability of surface-mounted device printed board |
CN106048667A (en) * | 2016-07-19 | 2016-10-26 | 哈尔滨工业大学深圳研究生院 | Connecting method based on electroplating and applied to same metal or dissimilar metal |
CN106646048A (en) * | 2016-12-23 | 2017-05-10 | 中国科学院深圳先进技术研究院 | Preparation method of microelectrode array |
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