CN101121500A - Method for manufacturing three-dimensional nerve microelectrode array - Google Patents
Method for manufacturing three-dimensional nerve microelectrode array Download PDFInfo
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- CN101121500A CN101121500A CNA2007100456404A CN200710045640A CN101121500A CN 101121500 A CN101121500 A CN 101121500A CN A2007100456404 A CNA2007100456404 A CN A2007100456404A CN 200710045640 A CN200710045640 A CN 200710045640A CN 101121500 A CN101121500 A CN 101121500A
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Abstract
The present invention belongs to the technical field of the micromachining of a microelectrode. In particular, the present invention is a manufacture method of a microelectrode array of a three-dimensional nerve. A glass die, a micro replication characteristic of PDMS and an electroplating technology are used to make the three-dimensional microelectrode array. A precise cutting machine is used to cut the glass to form a column array and a mixture of HF and NH4F is used to produce the corresponding structure serving as the die of the micro replication of PDMS. The photoetching technology is left out and the limitation of a photoresist on the dimension of the three-dimensional structure is eliminated; therefore the longer microelectrode array can be made. The length of the microelectrode array depends on the incision depth of the glass and the electroplating technology of deep hole of the metal. With a simple technology, the method of the present invention can reduce the cost largely.
Description
Technical field
The invention belongs to the micro-processing technology field of microelectrode, be specifically related to a kind of preparation method of three-dimensional nerve microelectrode array.
Background technology
Nerve microelectrode array is to realize that brain-computer interface nervous systems such as (brain-machine-interface) is connected indispensable instrument with extraneous instrument, in order to obtain nerve signal, various microelectrode arrays based on produced by micro processing are developed, the making more complicated of three-dimensional micro-electrode array wherein, cost is very high, but has great application prospect.
Typical three-dimensional nerve microelectrode array mainly contains Utah type and Michigan type, and the both is based on the micro-processing technology of silicon, makes complexity, requires very high to equipment.The method of making the high-aspect-ratio three-dimensional microstructures mainly contains LIGA (German Lithographie photoetching, the abbreviation of Galvanoformung electroforming and Abformung mold pressing) technology, based on the accurate LIGA technology of SU-8 glue and the deep etching technology of silicon, make three-dimensional nerve microelectrodes with these three kinds of methods and can not reduce cost of manufacture.The appearance of PDMS (dimethyl silicone polymer) has been opened up a kind of new way to little processing of three-dimensional structure, because PDMS is nontoxic, preparation easily, soft flexible is good, better chemical stability and little replication performance are arranged, and many micro structural components based on PDMS have obtained exploitation.The little duplication characteristic of PDMS combined with electroplating technology make the three-diemsnional electrode array, technology is simple, can reduce cost greatly.
Summary of the invention
The objective of the invention is to propose the method for the making three-dimensional nerve microelectrode array that a kind of technology is simple, cost reduces.
The preparation method of the three-dimensional nerve microelectrode that the present invention proposes, its step as shown in Figure 3.Concrete steps are as follows:
(a) do substrate with the glass of surfacing;
(b) mark the three-diemsnional electrode array pattern with accurate milling machine at substrate surface;
(c) shelter glass column subarray and glass figure with PDMS, use HF/NH
4F (0.5: 0.7-0.5: ℃ etching glass sheet of mixed liquor 40-50 0.8mol/L), this is equal to make erosional surface and cut base, and PDMS is removed in 500 ℃～600 ℃ annealing, again with same condition etching glass, makes the glass pillar become up-small and down-big pyramidal structure;
(d) mixed liquor with PDMS precursor and coagulating agent stirs, and is poured in the etch pattern of glass, and the horizontal positioned sheet glass makes the mixed liquor surfacing, and is lower than the upper surface of glass column subarray; 100 ℃ of-120 ℃ of heating glass sheets 10-15 minute make mixed liquor be frozen into the PDMS toughness film;
(e) take the PDMS film off, be attached on the copper seed crystal wave carrier piece substrate;
(f) use oxygen plasma treatment PDMS, put into electroplate liquid room temperature pulse copper facing then, make copper fill up circular hole among the PDMS;
(g) remove PDMS and form the copper three-dimensional nerve microelectrode array.
The making step of copper seed crystal wave carrier piece among the present invention: (a2) do substrate with the wave carrier piece that has cleaned; (b2) evaporation Au/Cr makes electroplated substrates, and Cr makes adhesion layer; (c2) pulse plating copper seed layer.
The experimental provision sketch of using among the present invention such as Fig. 1, Fig. 2.
The present invention utilizes the little duplication characteristic of glass mold, PDMS and electroplating technology to make three-dimensional micro-electrode array, forms columnar arrays with the precision gas cutting machine glass-cutting, with HF and NH
4The mixed liquor of F erodes away corresponding structure as the little mould that duplicates of PDMS, removed photoetching process from, eliminated the restriction of photoresist to the three-dimensional structure size, can make the microelectrode array of bigger length, this length is decided by the depth of cut of glass and the deep hole electroplating technology of metal.The inventive method, technology is simple, can reduce cost greatly.
Description of drawings
Fig. 1 is a spin etching device sketch.
Fig. 2 is the electroplanting device sketch.
Fig. 3 is the preparation method particular flow sheet.
The copper microelectrode array SEM figure of Fig. 4 for making of this method: a is the neat microelectrode arrays of three rows, and b was the array of electroplating, and c is single microelectrode, about 180 microns of electrode height.
Number in the figure: 1 is constant temperature water bath, and 2 is the etchant solution groove, and 3 are erosion object (sheet glass), 4 is the handgrip of fixing glass sheet, and 5 is rotating disc, and 6 is swingle, 7 is support, 8 is magnetic stirring apparatus, and 9 is the pulse plating power supply, and 10 is the lucite electroplating bath, 11 is the magnetic agitation rotor, 12 for electroplating object (copper seed layer that the PDMS mould covers), and 13 are the electro-coppering anode, and 14 for electroplating line.
The specific embodiment
Make flow process as shown in Figure 3: (a) do substrate with the thick glass of 2mm, (b) mark four 4 * 8 array pattern at substrate surface with the speed of 30000 commentaries on classics/min with the milling machine, the about 200 μ m of the scribing degree of depth (c) shelter glass column subarray and glass figure with PDMS, 50 ℃ of following HF/NH
4F (0.5: mixed liquor etching glass agreement that contracts a film or TV play to an actor or actress 200 μ m 0.75mol/L), check a glass substrate every about 20min, and use the deionized water ultrasonic cleaning, this is equal to make erosional surface and cut base, 500 ℃ of high annealings remove PDMS, again with the same about 30min of condition corrosion mould, make the glass pillar become up-small and down-big structure, (d) the PDMS precursor and the coagulating agent (volume ratio 10: 1) that have stirred of cast, leave standstill 15min, make the mixed liquor surfacing, and be lower than the upper surface of glass column subarray; Sheet glass is placed on the about 5min of heating on 120 ℃ the hot plate, mixed liquor is frozen into the PDMS toughness film, (e) take PDMS off, be attached on the wave carrier piece substrate of copper seed crystal, (f) use oxygen plasma treatment PDMS, it is hydrophilic that the PDMS surface is become, put into electroplate liquid room temperature pulse copper facing, pulse period 1ms, dutycycle 1: 10 makes copper fill up circular hole among the PDMS, (g) substrate of glass of having plated copper is put into the tetrahydrofuran solution of the tetrabutyl ammonium fluoride of 1mol/L, about 2 hours of normal temperature removes PDMS, promptly forms required copper three-dimensional micro-electrode array.
The making of copper seed crystal wave carrier piece: (a2) do substrate with the wave carrier piece that has cleaned, (b2) Au/Cr of the about 2000A of evaporation, Cr makes adhesion layer, (c2) pulse plating copper seed layer, pulse period 1ms, dutycycle 1: 10.
Claims (2)
1. the preparation method of a three-dimensional nerve microelectrode array is characterized in that concrete steps are as follows:
(a) do substrate with the glass of surfacing;
(b) mark the three-diemsnional electrode array pattern with accurate milling machine at substrate surface;
(c1) shelter glass column subarray and glass figure with PDMS, use HF/NH
4The mixed liquor 40-50 of F ℃ etching glass sheet, this is equal to make erosional surface and cut base, and PDMS is removed in 500 ℃～600 ℃ annealing, again with same condition etching glass, makes the glass pillar become up-small and down-big pyramidal structure; HF and NH in the mixed liquor
4The ratio of F is 0.5: 0.7-0.5: 0.8mol/L;
(d) mixed liquor with PDMS precursor and coagulating agent stirs, and is poured in the etch pattern of glass, and the horizontal positioned sheet glass makes the mixed liquor surfacing, and is lower than the upper surface of glass column subarray; 100 ℃ of-120 ℃ of heating glass sheets 10-15 minute make mixed liquor be frozen into the PDMS toughness film;
(e) take the PDMS film off, be attached on the copper seed crystal wave carrier piece substrate;
(f) use oxygen plasma treatment PDMS, put into electroplate liquid room temperature pulse copper facing then, make copper fill up circular hole among the PDMS;
(g) remove PDMS and form the copper three-dimensional nerve microelectrode array; Wherein, PDMS is a dimethyl silicone polymer.
2. preparation method according to claim 1 is characterized in that the making step of described copper seed crystal wave carrier piece is as follows: the making of copper seed crystal wave carrier piece: (a2) do substrate with the wave carrier piece that has cleaned; (b2) evaporation Au/Cr makes electroplated substrates, and Cr makes adhesion layer; (c2) pulse plating copper seed layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100456404A CN101121500A (en) | 2007-09-06 | 2007-09-06 | Method for manufacturing three-dimensional nerve microelectrode array |
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| CNA2007100456404A CN101121500A (en) | 2007-09-06 | 2007-09-06 | Method for manufacturing three-dimensional nerve microelectrode array |
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| CN101121500A true CN101121500A (en) | 2008-02-13 |
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| CNA2007100456404A Pending CN101121500A (en) | 2007-09-06 | 2007-09-06 | Method for manufacturing three-dimensional nerve microelectrode array |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101240435B (en) * | 2008-03-06 | 2011-02-09 | 复旦大学 | Plating self-welding method for three-dimensional micro-electrode array |
| CN103175718A (en) * | 2013-02-01 | 2013-06-26 | 上海交通大学 | Copper-connection microcolumn mechanical property in-situ compression sample and preparation method thereof |
| WO2014012381A1 (en) * | 2012-07-17 | 2014-01-23 | 上海交通大学 | Copper-connection microcolumn mechanical property in-situ compression sample and preparation method thereof |
-
2007
- 2007-09-06 CN CNA2007100456404A patent/CN101121500A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101240435B (en) * | 2008-03-06 | 2011-02-09 | 复旦大学 | Plating self-welding method for three-dimensional micro-electrode array |
| WO2014012381A1 (en) * | 2012-07-17 | 2014-01-23 | 上海交通大学 | Copper-connection microcolumn mechanical property in-situ compression sample and preparation method thereof |
| CN103175718A (en) * | 2013-02-01 | 2013-06-26 | 上海交通大学 | Copper-connection microcolumn mechanical property in-situ compression sample and preparation method thereof |
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Open date: 20080213 |