CN101238239A - 微电子装置中的钴化学镀 - Google Patents

微电子装置中的钴化学镀 Download PDF

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Publication number
CN101238239A
CN101238239A CNA2006800276848A CN200680027684A CN101238239A CN 101238239 A CN101238239 A CN 101238239A CN A2006800276848 A CNA2006800276848 A CN A2006800276848A CN 200680027684 A CN200680027684 A CN 200680027684A CN 101238239 A CN101238239 A CN 101238239A
Authority
CN
China
Prior art keywords
oxime
electroless plating
based compound
plating solution
ppm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006800276848A
Other languages
English (en)
Chinese (zh)
Inventor
小文森特·帕纳卡西奥
陈青云
查尔斯·瓦沃尔德
尼古莱·帕特曼夫
克瑞斯蒂安·威特
理查德·赫图比斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MacDermid Enthone Inc
Original Assignee
Enthone OMI Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enthone OMI Inc filed Critical Enthone OMI Inc
Publication of CN101238239A publication Critical patent/CN101238239A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
CNA2006800276848A 2005-06-09 2006-06-09 微电子装置中的钴化学镀 Pending CN101238239A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/148,724 2005-06-09
US11/148,724 US20060280860A1 (en) 2005-06-09 2005-06-09 Cobalt electroless plating in microelectronic devices

Publications (1)

Publication Number Publication Date
CN101238239A true CN101238239A (zh) 2008-08-06

Family

ID=37524395

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006800276848A Pending CN101238239A (zh) 2005-06-09 2006-06-09 微电子装置中的钴化学镀

Country Status (7)

Country Link
US (1) US20060280860A1 (https=)
EP (1) EP1896630A2 (https=)
JP (1) JP2008544078A (https=)
KR (1) KR20080018945A (https=)
CN (1) CN101238239A (https=)
TW (1) TW200712256A (https=)
WO (1) WO2006135752A2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103187298A (zh) * 2011-12-31 2013-07-03 中芯国际集成电路制造(上海)有限公司 金属栅极场效应晶体管及其制作方法
CN104637919A (zh) * 2010-05-28 2015-05-20 台湾积体电路制造股份有限公司 集成电路结构与其形成方法
CN113059179A (zh) * 2021-03-17 2021-07-02 电子科技大学 一种磁性钴颗粒的制备方法

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US7902639B2 (en) * 2005-05-13 2011-03-08 Siluria Technologies, Inc. Printable electric circuits, electronic components and method of forming the same
US7655081B2 (en) * 2005-05-13 2010-02-02 Siluria Technologies, Inc. Plating bath and surface treatment compositions for thin film deposition
EP1938367A2 (en) * 2005-09-20 2008-07-02 Enthone, Inc. Defectivity and process control of electroless deposition in microelectronics applications
US7410899B2 (en) * 2005-09-20 2008-08-12 Enthone, Inc. Defectivity and process control of electroless deposition in microelectronics applications
US8551560B2 (en) * 2008-05-23 2013-10-08 Intermolecular, Inc. Methods for improving selectivity of electroless deposition processes
CN102154632A (zh) * 2011-03-22 2011-08-17 王建朝 室温非水体系化学镀钴的方法
EP2639335B1 (en) * 2012-03-14 2015-09-16 Atotech Deutschland GmbH Alkaline plating bath for electroless deposition of cobalt alloys
US9768063B1 (en) 2016-06-30 2017-09-19 Lam Research Corporation Dual damascene fill
US11133218B1 (en) * 2020-01-23 2021-09-28 Tae Young Lee Semiconductor apparatus having through silicon via structure and manufacturing method thereof

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104637919A (zh) * 2010-05-28 2015-05-20 台湾积体电路制造股份有限公司 集成电路结构与其形成方法
CN103187298A (zh) * 2011-12-31 2013-07-03 中芯国际集成电路制造(上海)有限公司 金属栅极场效应晶体管及其制作方法
CN113059179A (zh) * 2021-03-17 2021-07-02 电子科技大学 一种磁性钴颗粒的制备方法
CN113059179B (zh) * 2021-03-17 2022-06-03 电子科技大学 一种磁性钴颗粒的制备方法

Also Published As

Publication number Publication date
WO2006135752A2 (en) 2006-12-21
TW200712256A (en) 2007-04-01
WO2006135752B1 (en) 2007-07-12
JP2008544078A (ja) 2008-12-04
EP1896630A2 (en) 2008-03-12
WO2006135752A3 (en) 2007-04-19
US20060280860A1 (en) 2006-12-14
KR20080018945A (ko) 2008-02-28

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Open date: 20080806