CN101237003A - Quanta point resonance tunnel penetration diode for faint light detection and its detection method - Google Patents
Quanta point resonance tunnel penetration diode for faint light detection and its detection method Download PDFInfo
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- CN101237003A CN101237003A CNA2007100476234A CN200710047623A CN101237003A CN 101237003 A CN101237003 A CN 101237003A CN A2007100476234 A CNA2007100476234 A CN A2007100476234A CN 200710047623 A CN200710047623 A CN 200710047623A CN 101237003 A CN101237003 A CN 101237003A
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Abstract
The present invention discloses a quantum dot resonant tunneling diode for weak light detection and a detection method thereof, wherein, the quantum dot resonant tunneling diode comprises GaAs responsive to visible light or an InGaAs photon absorption region responsive to infrared, self-assembling quantum dots, a thin AlAs double barrier layer, and a GaAs potential well layer. The combination formed by the self-assembling quantum dots, the thin AlAs double barrier layer and the GaAs potential well layer allows the quantum dots to directly participate in the resonant tunneling process, the amplifying capacity of the resonant tunneling process upon photo-generated carriers is greatly improved. The detection method is as follows: filling carriers to the quantum dots to form a metastable state before incident light detection, and further improving the photoresponse capacity of devices. The diode and the detection method have the advantages that: the structure of the device is simple, the size and the density of the quantum dots are within a general growth range, and the manufacture is easy; the device obtains the photon detection with ultra high sensitivity at liquid nitrogen temperature.
Description
Technical field
The present invention relates to visible light and short-wave infrared detector, be meant that specifically a kind of quantum dot that is used to survey visible light and short-wave infrared participates in the quanta point resonance tunnel penetration diode and the detection method thereof of resonance tunnel-through directly.
Background technology
Double barrier resonant tunneling diode (RTD) structure that adopts semiconductor heterostructure to realize can be traced back to 1974, has observed resonance tunneling effect in AlGaAs potential barrier GaAs potential well structure.Resonant tunneling device is mainly used in electricity field, have high frequency, at a high speed, bistable, self-locking etc. have advantage.People such as J.C.Blakesley were applied to resonance tunnel-through high sensitivity photon detection field (seeing Phys.Rev.Lett.94,067401 (2005)) first in 2005.They take dual potential barrier structure: Al
xGa
1-xAs (x=0.33) potential barrier, its thickness is 10nm, the GaAs potential well, its thickness is 10nm, and at potential barrier outside growth one deck quantum dot (QD), forms quanta point resonance tunnel penetration diode structure (QD-RTD).Use this structure, they have realized the high sensitivity detection of visible light under liquid helium temperature.After its principle was captured photo-generated carrier based on quantum dot, near the quantum well electromotive force the quantum dot changed, and utilizes this variation to modulate RTD resonance tunnel-through process, surveyed incident intensity by the variation that detects RTD resonance tunnel-through electric current.
The shortcoming of this device is: (1) device working temperature requires in the ultralow temperature of 5K, makes the practicability of device run into big difficulty.(2) amplification of photo-generated carrier is finished by AlGaAs/GaAs/AlGaAs double barrier resonant tunneling effect in the device optical detection process, quantum dot just plays the effect that influences the quantum well electromotive force, do not participate in the resonance tunnel-through process directly, the photo-generated carrier multiplication factor of device is difficult to continue to increase like this, has hindered its application under higher temperature.(3) barrier layer is too thick, and tunnelling current too small (peak current is less than 1nA) is unfavorable for the high-speed inspection of photon.
Summary of the invention
Shortcoming based on above-mentioned existing device exists the objective of the invention is to propose a kind of working temperature under liquid nitrogen temperature, and quantum dot is participated in the quanta point resonance tunnel penetration diode and the detection method thereof of resonance tunnel-through directly.
In order to achieve the above object, the technical solution used in the present invention is: under back bias voltage, by the attenuate barrier layer, allow quantum dot participate in the resonance tunnel-through process directly, form the resonance tunnel-through of electrode-quantum dot-double potential barrier-electrode, rather than the resonance tunnel-through of common electrode-double potential barrier-electrode.Utilize additional quanta point resonance tunnel penetration process to make device have high current-voltage non-linear, also make further raising photo-generated carrier multiplication factor become possibility.In order to make device that few photon detection ability be arranged, the invention allows for a kind of detection method of enhance device photo response ability under liquid nitrogen temperature: utilize before surveying light incident and earlier quantum dot is carried out the photoresponse ability that charge carrier filling formation metastable state has further strengthened device.
Quanta point resonance tunnel penetration diode of the present invention comprises: the Semi-insulating GaAs substrate is arranged in order the n of growth GaAs resilient coating, AlAs corrosion barrier layer, doping content gradual change by molecular beam epitaxy or metal organic vapor method on the Semi-insulating GaAs substrate
+GaAs bottom electrode, GaAs wall, dual potential barrier structure layer, GaAs wall, InAs quantum dot layer, light absorbing zone, n
+The GaAs top electrode.
Said dual potential barrier structure layer is made of two thick thick GaAs potential well layers of AlAs barrier layer therebetween one 8nm of 1-4nm.
Said InAs quantum dot density is (1-9) * 10
10Cm
-2
Said light absorbing zone is GaAs or InGaAs, and when absorbed layer was GaAs, this device was surveyed visible light, and when absorbed layer was InGaAs, this device was surveyed short-wave infrared.
The detection method of device of the present invention comprises the steps:
A. at first under dark background, add positive voltage V to device
+, electronics is from bottom electrode (being emitter) toward top electrode (being collector electrode) tunnelling under forward bias;
B. under dark background, add back bias voltage V then to device
-, this moment, electronics toward the bottom electrode tunnelling, was read the peak current I of this moment from the top electrode of device
1
C. under dark background, bias voltage is returned to V
+, allow device be returned to above-mentioned A condition;
D. will be detected on the plane of illumination that light incides tunnel-through diode, add back bias voltage V to device
-, record peak current at this moment is I
2, by detecting I
2Relative I
1Variation survey incident intensity.
Device advantage of the present invention is as follows:
(1) device architecture is simple, and quantum dot size and density all belong to conventional growth scope, and preparation easily.
(2) device has obtained supersensitive photon detection ability under liquid nitrogen temperature.
Description of drawings
Fig. 1 is the structural representation of quanta point resonance tunnel penetration diode of the present invention (QD-RTD), L among the figure
RTD, L
QD-RTDArticle two, straight line has provided two paths of electric current: L under the reverse biased
QD-RTDBy quantum dot, L
RTDDo not pass through quantum dot.
Fig. 2 be QD-RTD under 77K, the back bias voltage current-voltage curve under the different incident intensities.All back bias voltage curves all record behind 4V forward bias 2s.Arrow shows that incident intensity strengthens direction.Illustration is the current-voltage curve of forward scan, and two curves (dark background and add incident light) all carry out recording behind the forward bias behind-4V biasing 2s again.
Fig. 3 is the pull-down current-voltage curve of QD-RTD under 77K, and arrow shows that incident photon speed increases direction.Photon velocity unit is what photons of the every square micron of per second.Device active region is 5 square microns.All pull-down current-voltage curves all are to record behind 4V positively biased 2s.
Fig. 4 is the energy diagram under the different bias voltages of device.(a) and (b) figure contains quantum dot and does not contain the energy diagram of quantum dot RTD structure under zero-bias.These two energy diagrams are found the solution Poisson's equation and Schrodinger equation obtains by being in harmony certainly; The InAs quantum dot has adopted InAs quantum well first approximation to obtain.Calculating shows that near the energy level the quantum dot can be lifted when equivalent point had electronics to occupy.(c), (d) figure be quantum dot under positive bias, charge and reverse bias under the schematic diagram of discharge process.
Embodiment
Below in conjunction with drawings and Examples the specific embodiment of the present invention is described in further detail:
See Fig. 1, on Semi-insulating GaAs substrate 1, be arranged in order the GaAs resilient coating 2 of growth 200nm, the AlAs corrosion barrier layer 3 of 10nm, the gradual change n of 380nm by molecular beam epitaxy or metal organic vapor method
+(doping content is 1 * 10 to GaAs
18-1 * 10
16Cm
-3) AlAs potential barrier 6-1, the GaAs wall 7 of 2nm, the density of GaAs potential well 6-2,3nm of the GaAs wall 5 of bottom electrode 4,20nm, AlAs potential barrier 6-1, the 8nm of 3nm is about 10
10Cm
-2InAs quantum dot layer 8, the GaAs light absorbing zone 9 of 150nm, the n of 50nm
+(doping content is 2 * 10 to GaAs
18Cm
-3) top electrode 10.If the detection infrared band changes the GaAs absorbed layer into the InGaAs layer, just the photoresponse wave band can be modulated to short-wave infrared.AFM shows that the actual density of quantum dot is 5.7 * 10
10Cm
-2, diameter 20-28nm, highly about 8nm.
Device technology adopts the resonance tunnel-through diode technology of air bridges insulation, and the technology detailed step can be with reference to J.Wang et al., Appl.Phys.Lett.65,1124 (1994).Be different from common mesa technique, the device effective area of air bridges insulating process is littler, and Ohm contact electrode has improved the photon utilization ratio greatly away from the active area of device.The effective area of our device is 1 μ m * 5 μ m.
The optical detection mode of device is as follows:
(1) under dark background, does forward bias scanning earlier to device
Electronics is from bottom electrode (emitter) toward top electrode (collector electrode) tunnelling under the positive bias.Corresponding resonance tunnel-through curve is shown in dotted line in Fig. 2 illustration.This moment, quantum dot was in collector depletion region, can be launched the electronics that utmost point tunnelling comes and fill up gradually.
(2) under dark background, do reverse biased scanning then to device
Toward the bottom electrode tunnelling, electronics has two kinds of tunnelling path: L to electronics from the top electrode of device at this moment
RTDFor electronics never contains the regional tunnelling of quantum dot, a tunnelling is crossed double potential barrier, is the tunnelling of three-dimensional-two dimension; L
QD-RTDFor electronics from containing the regional tunnelling of quantum dot, be the tunnelling pattern of three-dimensional-0 dimension-2 d-3 d.The I-V of reverse scan shown in Fig. 2 black dotted lines, i.e. curve under the dark background.The peak current at record A peak at this moment is I
1
(3) under dark background, reform forward bias scanning.
Allow device be returned to the state of above-mentioned (1), be convenient to investigate the response of incident light.
(4) under illumination, reform reverse biased scanning.
Incident light adopts the light-emitting diode (LED) of transmitting green light, obtains the incident light of varying strength by the electric current of regulating LED, and the photoresponse of device as shown in Figure 2.Record A peak-to-peak value electric current at this moment is I
2I
2Along with the unidirectional increase of light intensity.The peak current that can see the A peak is more much bigger than the peak current amplitude of variation at B peak.The forward bias voltage is added onesize light intensity, and its amplitude of variation (C peak-to-peak value electric current) is much smaller than reverse biased.The device that has reflected us is at anti-high sensitivity on the lower side.
For further our device of checking to the high sensitivity of light, to single photon, the device of measuring us has reflection to how many photons with the laser attenuation of 530nm for we.Photo emissions speed is obtained by silicon avalanche breakdown single photon counting module (PerkinElmer SPCM-AQR).The device that Fig. 3 has reflected us changes the have an appointment peak current of 10nA of the photon velocity of 23 every square microns of photon per second under liquid nitrogen temperature.The device effective area of considering us is 5 square microns only, can estimate a photon and produce about 1,000 ten thousand electronics, produce than the next photon of conventional detector perfect condition an electronics the efficient height 1,000 ten thousand times.Therefore our device can be described as the hypersensitivity response to visible light.
The operating voltage point that needs to be provided with device in concrete the application.In order to simplify detection process, two voltages can be set simply: a forward voltage V
+With a reverse voltage V
-V
+Be taken as the voltage that makes electronics be tunneling to collector electrode in a large number.V
-Be taken as the crest voltage of A peak correspondence among Fig. 2.To this device, can set V
+Be 4V, V
-For-1.7V.Can it goes without doing in actual detection voltage scanning, only need add V to device
+Voltage charges to quantum dot, and voltage is returned to V then
-, incident light is surveyed.
The physical mechanism of devices use of the present invention is as follows:
B as can see from Figure 2, the position at C peak is symmetry almost, and this is the obvious characteristics in symmetric double barrier structure resonance tunnel-through peak that does not contain quantum dot.Therefore we think that B, C peak are the resonance tunnel-through peaks of RTD double potential barrier, by Fig. 1 along L
RTDThe electronics of path tunnelling forms.The A peak only appears at reverse biased, the small peak that forward bias is not corresponding.Its crest voltage absolute value is less than the B peak, and crest voltage is with changing a little less than the incident intensity.We think that the A peak is that electronics forms through quantum well resonance level tunnelling from quantum dot, as Fig. 1 L
QD-RTDShown in the path.
Fig. 4 (a) and (b) be the device architecture that contains quantum dot and do not contain quantum dot zero on the lower side be in harmony the result certainly, find the solution Poisson's equation and Schrodinger equation obtains (as the sxemiquantitative discussion, quantum dot has adopted InAs quantum well first approximation) by being in harmony certainly.Calculating shows, compares RTD, and the QD-RTD that contains quantum dot has by a relatively large margin and lifts from being in harmony electromotive force around the quantum dot of back.Electronics tended to never contain the regional tunnelling of quantum dot when therefore electronics was from power on extremely toward the bottom electrode tunnelling under reversed bias voltage.The electronics of quantum dot is many more, (sees Fig. 1 path L from the quantum dot region tunnelling
QD-RTD) electronics just few more.Charging and discharging of quantum dot electronics can be described by Fig. 4 (c), (d).Under forward bias, quantum dot is in depletion region, captures the electronics that the emitter tunnelling is come, and charge stored increases greatly, is charging process.Under reverse biased, quantum dot is in emitter.The electronics of quantum dot can discharge by the energy level resonance tunnel-through in the quantum well, is discharge process.
Instead on the lower side electronics from power on the utmost point be tunneling to bottom electrode.Because quantum dot is in top electrode one side, the tunnelling of electronics is subjected to the strong influence of quantum dot electromotive force.When quantum dot was full of electronics, the potential well electromotive force lifted near the quantum dot, and electronics is difficult for going over from the quantum dot tunnelling of full electronics, and the zone of being partial to not contain from the side quantum dot is (as the L among Fig. 1
RTDThe path) tunnelling.The most like this electric current L that flows through
RTD, have only the small part electric current L that flows through
QD-RTDThe result of electric current adjustment is that the peak current absolute value at A peak among Fig. 2 under the dark background, 3 is less than normal.
Photohole is captured by the quantum dot of full electronics after adding light, and the electronics of quantum dot storage is neutralized by the hole and reduces gradually, and lifting of electromotive force reduces gradually around the quantum dot, therefore from containing quantum dot region (as the L Fig. 1
QD-RTDThe path) electronics in tunnelling past increases gradually, and the peak current at A peak increases gradually.Because the A peak originates from the resonance tunnel-through of electronics from quantum dot to contiguous quantum well energy level, the A peak has very strong non-linear, and photohole absorbs the little change that causes the quantum dot electromotive force and can produce very strong electric current and change.This just makes the high sensitivity photon detection become possibility.
In sum, the realization of our success the technical scheme of expection, the resonance tunnel-through process of utilizing quantum dot to participate in has obtained supersensitive visible-light detector.To the near-infrared photon,, just can obtain supersensitive near-infrared photon detector as long as the GaAs visible light absorbing layer is changed into InGaAs near infrared absorption layer.
Claims (2)
1. quanta point resonance tunnel penetration diode that is used for faint light detection, comprise: Semi-insulating GaAs substrate (1) is arranged in order the n of growth GaAs resilient coating (2), AlAs corrosion barrier layer (3), doping content gradual change by molecular beam epitaxy or metal organic vapor method on the Semi-insulating GaAs substrate
+GaAs bottom electrode (4), GaAs wall (5), dual potential barrier structure layer (6), GaAs wall (7), InAs quantum dot layer (8), light absorbing zone (9), n
+GaAs top electrode (10); It is characterized in that:
Said dual potential barrier structure layer is made of two thick thick GaAs potential well layers (6-2) of AlAs barrier layer (6-1) therebetween one 8nm of 1-4nm;
Said InAs quantum dot density is (1-9) * 10
10Cm
-2
Said light absorbing zone is GaAs or InGaAs, and when absorbed layer was GaAs, this device was surveyed visible light, and when absorbed layer was InGaAs, this device was surveyed short-wave infrared.
2. according to a kind of detection method that is used for the quanta point resonance tunnel penetration diode of faint light detection of claim 1, it is characterized in that comprising the steps:
A. at first under dark background, add positive voltage V to device
+, electronics is from bottom electrode under forward bias, and promptly emitter is toward top electrode, i.e. collector electrode tunnelling;
B. under dark background, add back bias voltage V then to device
-, this moment, electronics toward the bottom electrode tunnelling, was read the peak current I of this moment from the top electrode of device
1
C. under dark background, bias voltage is returned to V
+, allow device be returned to above-mentioned A condition;
D. will be detected on the plane of illumination that light incides tunnel-through diode, add back bias voltage V to device
-, record peak current at this moment is I
2, by detecting I
2Relative I
1Variation survey incident intensity.
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| CN104051560A (en) * | 2014-06-19 | 2014-09-17 | 苏州瑞晟纳米科技有限公司 | Novel infrared detector based on three-dimensional self-assembly nano materials |
| CN104659145A (en) * | 2015-03-06 | 2015-05-27 | 中国科学院半导体研究所 | Resonant tunneling diode based high-sensitivity detector with low dark current |
| CN105206702A (en) * | 2014-06-27 | 2015-12-30 | 中国人民解放军军械工程学院 | Novel-structurally single-photon detector |
| CN105845743A (en) * | 2015-01-12 | 2016-08-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Resonant tunneling diode based on InGaAs/AlAs material |
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| JP4169553B2 (en) * | 2002-09-11 | 2008-10-22 | 富士通株式会社 | Resonant tunnel device and semiconductor integrated circuit using the same |
| CN100392870C (en) * | 2005-09-23 | 2008-06-04 | 中国科学院上海技术物理研究所 | Self-amplifying infrared detector |
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| CN104051560A (en) * | 2014-06-19 | 2014-09-17 | 苏州瑞晟纳米科技有限公司 | Novel infrared detector based on three-dimensional self-assembly nano materials |
| CN105206702A (en) * | 2014-06-27 | 2015-12-30 | 中国人民解放军军械工程学院 | Novel-structurally single-photon detector |
| CN105206702B (en) * | 2014-06-27 | 2017-10-10 | 中国人民解放军军械工程学院 | A kind of single-photon detector of new structure |
| CN105845743A (en) * | 2015-01-12 | 2016-08-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Resonant tunneling diode based on InGaAs/AlAs material |
| CN104659145A (en) * | 2015-03-06 | 2015-05-27 | 中国科学院半导体研究所 | Resonant tunneling diode based high-sensitivity detector with low dark current |
| CN104659145B (en) * | 2015-03-06 | 2017-01-25 | 中国科学院半导体研究所 | Resonant tunneling diode based high-sensitivity detector with low dark current |
| CN105845793A (en) * | 2016-06-01 | 2016-08-10 | 天津三安光电有限公司 | Invisible light emitting diode and fabrication method thereof |
| WO2017206771A1 (en) * | 2016-06-01 | 2017-12-07 | 厦门三安光电有限公司 | Invisible-light light emitting diode and manufacturing method therefor |
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