CN101226989A - Transition layer for phase-change memory - Google Patents
Transition layer for phase-change memory Download PDFInfo
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Abstract
The invention relates to a transition layer for a phase change memory, which is characterized in that the transition layer is located between a phase change material and an electrode material, the electric resistivity of the transition layer material is between 10-6 ohm meter and 1016 ohm meter, the thermal conductivity of the transition layer material is between 0.01W/mk and 30 W/mk. The thickness of the transition layer is smaller than 10nm, and an adhesion force exists between the phase change material or the electrode material. The transition layer with a single layer or a plurality of layer structures is capable of effectively blocking the phase change material and the electrode material to mutually diffuse, thereby promoting the heating efficiency of an electrode, simultaneously reducing the heat which is diffused to the electrode and an oxide, and leading more heating to heat the phase change material. The invention not only increases the utilization ratio of heat and reduces the power, but also increases the difference between the high and low resistance of the phase change memory. A highest temperature area in the phase change material is moved to a heating electrode, thereby effectively controlling the melting of the phase change material around the electrode, and increasing the reliability of the device.
Description
Technical field
The present invention relates to a kind of transition zone that is used for phase transition storage, belong to the phase transition storage field in the microelectronics.
Background technology
Phase transition storage (PCM) is the focus of present nonvolatile memory research of new generation, has vast market prospect, it integrates high speed, high density, irradiation simple in structure, with low cost, anti-, advantage such as non-volatile, be at present by the extensively good the strongest competitor of memory of future generation, it will have an opportunity to substitute present widely used flash memories, thereby occupy an important seat in the electronic memory field.
The principle of PCM is based on electric pulse to the heating of phase-change material and the reversible variation between the high and low resistance that realizes, when phase-change material is heated to below the fusing point, when crystallization temperature was above, phase-change material just was transformed into the polycrystalline attitude of low-resistance, is set at logical one; Cool off when phase-change material is heated to more than the fusing point and fast, phase-change material just changes the amorphous state of high resistant into, can be set at logical zero; Then use very little being unlikely to make the signal of telecommunication that any variation takes place phase-change material read information when reading.In order to reach the requirement of using in portable set, memory device must have lower power consumption, higher storage density, so, how reducing the programming power consumption of PCM, the reliability that promotes PCM has become the emphasis of PCM research and development.
The basic structure schematic diagram of typical PCM device array as shown in Figure 1, phase-change memory storage unit prepares on tungsten electrode; Figure 2 shows that traditional phase-change memory cell structure schematic diagram, can see, in PCM, be sandwiched in up and down between two electrodes as the phase-change material of storage medium, and electrode generally is a tungsten from figure.In order to reduce the power consumption of PCM device, the structure of traditional devices is improved or the heating electrode size of dwindling memory all is one of effective way, the improvement to electrode material also is a kind of means commonly used certainly.Can increase the Joule heat that the heating electrode of PCM device produces by the heating electrode of introducing higher electric resistivity under same electric current, also just improved the heating heating efficiency, promptly in order to reach same temperature (such as fusing point), the required program current of the device behind the improvement electrode will be lower.
On the other hand, along with the further deep research and development of PCM, the reliability of boost device has also become important research contents.At present, in the test of PCM device, often find in reset (programming of PCM from the low-resistance to the high resistant) process, to tend to obtain low-resistance state, what promptly originally wish to obtain to obtain after the reset operation of high-impedance state but is lower Resistance states, and this lower resistance state is unacceptable, because the identification of the information of PCM just is based on the resistance value size of device, and this lower resistance state can cause system to produce disorder when distinguishing high low-resistance, thereby influences the reliability of the operation of memory device.What adopt in the PCM device that causes the main cause of above-mentioned this unsuccessful reset to be in routine is the metal electrode of high heat conductance, because metal electrode has high thermal, in programming process, the heat diffusion that produces is gone out with regard to being very easy to, although the current density on interface between phase-change material and the heating electrode is the highest, the heat of corresponding generation and corresponding with it temperature all should be the highest, but heat diffusion herein is the fastest equally, so in the reset process, maximum temperature point in the phase-change material is not the near interface at phase-change material and heating electrode, but in the central area of phase-change material, this can find out clear in the calorifics analog result of conventional device structure from accompanying drawing 3.Such consequence has caused in reset process phase-change material can't reach fusion temperature near near the zone the METAL HEATING PROCESS electrode, certainly also just can't realize decrystallized, so just have certain thickness polycrystalline low resistance state phase-change material to be coated on the surface of electrode later at reset, and the formation of the phase-change material of this layer low-resistance makes existence and amorphous high resistant resistance low resistance in parallel in the device, result in parallel makes device integral body present lower resistance (with reference to D.Mantegazza, D.Itelmini, A.Pirovano, and A.L.Lacaita, IEEEElectron.Dev.Lett.28,865 (2007)).This lower resistance has had a strong impact on the judgement of writing, wiping operation and high low-resistance of device, is necessary so eliminate this parallel resistance.And in order to address this problem, just need to phase-change material and heating electrode Interface Moving the highest temperature region in the phase-change material, the material that is coated on electrode surface like this behind the reset is exactly an amorphous, so, inspire the present inventor whether can realize by the transition zone that introducing is clipped in low conductivity, lower thermal conductivity between phase-change material and the electrode.The existence of the transition zone of the high efficiency of heating surface is the higher temperature of generation at the interface between phase-change material and heating electrode at first, in addition, it has also stoped the speed of heat to electrode diffusion, like this maximum temperature in the phase-change material will with the heating electrode interface near.
The introducing of lower thermal conductivity electrode or transition zone can also reduce heat in the programming process to oxide and extraneous diffusion, and more heat has been applied in the programming to phase-change material.PCM device for present conventional structure, only there is about 1% heat to be applied in the heating to the program regions phase-change material, all the other big portions all are diffused in oxide and the upper and lower electrode (referring to S.M.Sadeghipour, L.Pileggi, and M.Asheghi, The Tenth Intersociety Conference on ITHERM, (IEEE, New York, 2006) the 660th page).So improved the utilance of heat by the introducing of lower thermal conductivity electrode or transition zone, also just greatly reduce power consumption, make phase transition storage meet the requirement of low-power consumption more.
On the other hand, traditional tungsten heating electrode and the non-constant of adhesive force between the GeSbTe phase-change material, so poor adhesive capacity makes two materials may produce separation in the multi-pass operation process of device, the inefficacy of device will be caused in case come off, so insecure great hidden danger that becomes PCM device actual effect that contacts between tungsten heating electrode and the GeSbTe phase-change material.Also illustrate that from this side the present invention attempts to introduce the design that has the transition zone of good adhesion with phase-change material, significant for the reliability that promotes the PCM device.
In sum, by in the PCM device, introducing the design of transition thin layer preferably of low conductivity, lower thermal conductivity, adhesion, can either reduce the power consumption of phase-change memory device, issuable parallel resistance in the abatement device, the reliability of boost device again.
Summary of the invention
The object of the present invention is to provide a kind of heating electrode of phase transition storage and transition zone between the phase-change material of being used for, thereby increase the heating efficiency of phase transition storage in programming process, and heat is to the diffusion of electrode or oxide in the minimizing programming process, the highest temperature region of phase-change material layers in programming process moved to the near interface of phase-change material and heating electrode, reach the purpose of the reliability of issuable parallel resistance, boost device in the power consumption that reduces the PCM device, the abatement device.
Transition zone set forth in the present invention is between phase-change material and electrode, and as shown in Figure 4, described transition zone can be between top electrode and phase-change material, also can be between bottom electrode and phase-change material, and perhaps the both has it, and thickness is＜10nm.It has compare with the tungsten electrode low conductivity and lower thermal conductivity, and between the 30W/mK, and electrical resistivity range is 10 at 0.01W/mK for conductivity range
-6Ohm meter and 10
16Between the ohm meter: lower conductivity makes device have higher heating efficiency in programming process under the effect of current impulse; The heat that produces in the device is less to be diffused in electrode and the oxide and lower thermal conductivity makes.The use of this transition zone has not only promoted the utilance of heat, and the highest temperature region in the phase-change material layers is moved to close heating electrode zone, make phase-change material near heating electrode in the reset process, can reach fusing point and realize easily decrystallized, thereby eliminate the parallel resistance of the low-resistance that might produce.Buffer layer material can be semiconductor, can be metal alloy, also can be dielectric material, its structure is single layer structure or sandwich construction; Only need meet above-mentioned lower thermal conductivity, the requirement of low conductivity, and between transition zone and the phase-change material, all have the good adhesive force ability between transition zone and the electrode, self fusing point is higher than the fusing point of phase-change material.Usually the fusing point of buffer layer material is more than 600 ℃, and the use of transition zone make between electrode material and the phase-change material atom mutually counterdiffusion be inhibited.
Transition zone has heat insulating function, and electrode can stop the speed of the heat of heating region to the low-temperature region diffusion in programming process, thereby reaches the purpose that promotes heat utilization ratio.
Described buffer layer material is commonly used polycrystalline germanium film, amorphous silicon membrane or silicon oxide film.
Description of drawings
The typical phase change memory array schematic diagram of Fig. 1.
The conventional memory cell device schematic cross-section of Fig. 2.
Fig. 3 is for the calorifics simulation of the PCM device architecture of routine shown in Figure 2.
Fig. 4 has the memory cell device schematic cross-section of the structure of two-layer transition zone.
Fig. 5 be the PCM device calorifics under same current impulse effect simulation relatively, (a) conventional PCM device and (b) upper and lowerly have a 4nm polycrystalline germanium transition zone
Fig. 6 is the temperature profile curve and the temperature profile line of conventional PCM device when the reset state of simulation shown in Figure 5.Wherein (a) is upper and lower respectively has the 4nm polycrystalline germanium and crosses temperature profile line when maximum temperature reaches fusion temperature in the phase-change material among the PCM of layer more, (b) using temperature profile line in the same electric current conventional PCM device of following time, the temperature profile line when (c) maximum temperature reaches fusion temperature in the phase-change material among the Chang Gui PCM with (a).
The conventional PCM device of Fig. 7 (a) and (b) upper and lower respectively have the 4nm polycrystalline germanium cross more the layer the PCM test results of devices.
Embodiment
1. utilize 0.18 micrometer semiconductor prepared of standard to go out electrod-array.
2. utilize magnetron sputtering method to deposit polycrystalline germanium film, GeSbTe phase-change thin film, polycrystalline germanium film, TiN film successively on above-mentioned electrod-array, four thickness is respectively 5nm, 150nm, 4nm, 30nm.Underlayer temperature in the deposition process is 350 degree.
3. utilize optical exposure and reactive ion etching method to carve memory cell.
4. deposit the thick aluminium electrode of 300nm.
5. utilize optical exposure and reactive ion etching method to carve electrode, the basic structure that obtains as shown in Figure 1.
6. encapsulation, lead-in wire.
7. by calorifics simulation to this structure, the application of finding polycrystalline germanium has very great help for the boost device performance, Fig. 5 shows that this structure temperature in the phase-change material under same electric current is higher than traditional structure far away, illustrates that the application with polycrystalline germanium makes device have higher heating efficiency.Fig. 6 is the temperature profile curve of different components, and the maximum temperature that has shown phase-change material in the device behind the transition zone moves to the hot hearth electrode that adds, and this gives the credit to the polycrystalline germanium thermal conductivity lower with respect to tungsten electrode.
8. the device that obtains is tested, test result shows that above-mentioned device has lower program current as shown in Figure 7, and higher amorphous state resistance is arranged.
Embodiment 2
1. utilize 0.18 micrometer semiconductor prepared of standard to go out electrod-array.
2. utilize magnetron sputtering method deposition of amorphous silicon films, GeSbTe phase-change thin film and TiN film successively on above-mentioned electrod-array, three's thickness is respectively 1.5nm, 180nm and 35nm.The temperature that sinks to the bottom in the deposition process is 240 degree.
3. utilize optical exposure and reactive ion etching method to carve memory cell.
4. deposit the thick aluminium electrode of 300nm.
5. utilize optical exposure and reactive ion etching method to carve electrode.
6. encapsulation, lead-in wire.
7. test.
Embodiment 3
1. utilize 0.25 micrometer semiconductor prepared of standard to go out electrod-array.
2. utilize chemical vapour deposition technique cvd silicon oxide film, GeSbTe phase-change thin film and TiN film successively on above-mentioned electrod-array, three's thickness is respectively 1nm, 250nm and 40nm.The temperature that sinks to the bottom in the deposition process is a room temperature.
3. utilize electron beam exposure and reactive ion etching method to carve memory cell.
4. deposit the thick aluminium electrode of 350nm.
5. utilize optical exposure and reactive ion etching method to carve electrode.
6. encapsulation, lead-in wire, test.
Embodiment 4
1. utilize 0.13 micrometer semiconductor prepared of standard to go out electrod-array.
2. utilize magnetron sputtering method deposit Germanium, silicon and carbon plural layers successively on above-mentioned electrod-array, i.e. deposit Germanium, silicon, carbon, germanium, silicon, carbon successively, thickness is respectively 1nm, and underlayer temperature is 400 degree.
3.GeSbTe phase-change thin film and TiN film, three's thickness is respectively 100nm and 30nm.The temperature that sinks to the bottom in the deposition process is 350 degree.
4. utilize electron beam exposure and reactive ion etching method to carve memory cell.
5. deposit the thick aluminium electrode of 200nm.
6. utilize optical exposure and reactive ion etching method to carve electrode.
7. encapsulation, lead-in wire, test.
Claims (10)
1. a transition zone that is used for phase transition storage is characterized in that described transition zone is between phase-change material and electrode material; The resistivity of buffer layer material is 10
-6Ohm meter and 10
16Between the ohm meter, the thermal conductivity of buffer layer material at 0.01W/mk between the 30W/mk.
2. by the described transition zone that is used for phase transition storage of claim 1, it is characterized in that described transition zone is between top electrode and the phase-change material, between bottom electrode and the phase-change material or between top electrode and bottom electrode and phase-change material.
3. by claim 1 or the 2 described transition zones that are used for phase transition storage, it is characterized in that the thickness＜10nm of described transition zone, and and phase-change material or electrode material between have adhesive force.
4. by claim 1 or the 2 described transition zones that are used for phase transition storage, it is characterized in that described transition zone is single layer structure or sandwich construction.
5. by the described transition zone that is used for phase transition storage of claim 1, it is characterized in that described buffer layer material is semiconductor, metal alloy or dielectric material.
6. by the described transition zone that is used for phase transition storage of claim 5, it is characterized in that described buffer layer material is polycrystalline germanium film, amorphous silicon membrane or silicon oxide film.
7. by the described transition zone that is used for phase transition storage of claim 4, it is characterized in that the transition zone of described sandwich construction is made up of germanium, silicon and carbon.
8. by claim 1 or the 2 described transition zones that are used for phase transition storage, it is characterized in that described buffer layer material is higher than the fusing point of phase-change material.
9. by the described transition zone that is used for phase transition storage of claim 8, it is characterized in that described buffer layer material fusing point is more than 600 ℃.
10. by claim 1 or the 2 described transition zones that are used for phase transition storage, it is characterized in that described transition zone makes phase transition storage highest temperature region in the phase-change material in programming process move to the interface of electrode and phase-change material direction from the central area of phase-change material.
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