CN101218680A - Conversion apparatus, radiation detector, and radiation detecting system - Google Patents
Conversion apparatus, radiation detector, and radiation detecting system Download PDFInfo
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- CN101218680A CN101218680A CNA2006800252275A CN200680025227A CN101218680A CN 101218680 A CN101218680 A CN 101218680A CN A2006800252275 A CNA2006800252275 A CN A2006800252275A CN 200680025227 A CN200680025227 A CN 200680025227A CN 101218680 A CN101218680 A CN 101218680A
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Abstract
A conversion apparatus of the present invention includes a pixel region in which a plurality of pixels are arranged. The pixels are including the switching elements and the conversion elements. The pixel region includes a switching element region in which the plurality of switching elements are arranged in row and column directions, and a conversion element region in which the plurality of conversion elements are arranged in row and column directions. A plurality of signal wirings are including a second metal layer, and connected to the plurality of switching elements of the column direction. Bias wirings are including a fourth metal layer, and connected to the plurality of conversion elements. An external signal wiring is including the first metal layer outside the pixel region, and connected to the signal wirings. The external signal wiring and the bias wiring intersect each other.
Description
Technical field
The present invention relates to the conversion equipment of the analyzer that is applied to medical image diagnostic device, nondestructive inspection equipment, uses radioactive ray etc. especially, uses the radiation detection equipment of this conversion equipment, and radiation detecting system.In this explanation, radioactive ray comprise electromagnetic wave, X ray, alpha ray, β ray and the gamma-rays etc. of visible light etc.
Background technology
Traditionally, the radiography that will be used for the medical image diagnosis is sorted out to general radiography, as is used to obtain the X ray radiography of rest image, and the fluorescope radiography that is used to obtain moving image.Need according to occasion, select to comprise each radiography of imaging device and image pick-up device.
In traditional general radiography, two systems that describe below have mainly been realized.One is screen sheet (screen film) imaging (after this being abbreviated as the SF imaging) system, and it carries out exposure, development and photographic fixing by using the screen sheet for preparing by combination phosphor screen and film, carries out imaging.Another is radiography imaging (after this being abbreviated as a CR imaging) system as calculated, but it is recorded in radiation image on the phosphor of light stimulus as sub-image, utilize the phosphorescence fluorescent material of laser scanning speedup (accelerated) so that export optical information, and read the optical information of output by transducer according to sub-image.Yet in traditional general radiography, the problem of existence is to obtain the processing complexity of radiation image.The radiation image that obtains can be converted into numerical data, but it is digitized indirectly.Therefore, the problem of generation is to spend the plenty of time and obtains digitalization radiation line image data.
Secondly, in traditional fluorescope radiography, main image reinforcing agent radiography (after this being abbreviated as the I.I radiography) system that uses fluorescent material and electron tube that adopts.Yet in traditional fluorescope radiography, the problem of existence is owing to using electron tube, so equipment size is bigger.Because little visual field (surveyed area) when obtaining to have large-area image, uses electron tube to produce difficulty.In addition, the problem of existence is owing to using electron tube, so the resolution of the image that obtains is lower.
Therefore, in recent years, the focus of paying close attention to is a sensor panel, and described sensor panel is by being configured to a plurality of pixels of two-dimensional matrix arranged in form, and described pixel has and is used in the future the radioactive ray of autofluorescence material or conversion element and the switch element that light converts electric charge to.Especially, the focus of paying close attention to is flat-panel detector (after this being abbreviated as FPD), wherein with a plurality of pixels of two-dimensional matrix arranged in form, described pixel has the conversion element by preparation such as the non-single crystal semiconductor on dielectric substrate such as amorphous silicon (after this being abbreviated as a-Si), and by the thin-film transistor (after this being abbreviated as TFT) of non-single crystal semiconductor preparation.
Be converted to electric charge by the radioactive ray that will be had image information by conversion element, and read described electric charge by switch element, this FPD can obtain the signal of telecommunication based on image information.Therefore, image information directly can be taken out from FPD as digital signal information, thereby be convenient to carry out, so that can further use radiation image information such as storage, processing and image transmitted data processing.The characteristic of FPD such as sensitivity, depends on the condition of radiography.Yet, to compare with traditional SF or CR imaging system, equal or better characteristic is confirmed.In addition,, compare, have and shortened the acquisition image advantage of required time with traditional SF or CR imaging system owing to can be directly obtain the signal of telecommunication with image information from FPD.
As FPD, disclose described in W093/14418 number as international application, known a kind of PIN type FPD, it uses the sensor panel by being configured to a plurality of pixels of two-dimensional matrix arranged in form, and described a plurality of pixels are to be made of the PIN type photodiode and the TFT that make with a-Si.This PIN type FPD has laminar structure, wherein arranges the layer that constitutes PIN type diode on the layer that constitutes the TFT on the substrate.As United States Patent (USP) the 6th, 075, described in No. 256, known a kind of MIS type FPD, it uses the sensor panel by being configured to a plurality of pixels of two-dimensional matrix arranged in form, and described pixel is made of the MIS type photoelectric sensor and the TFT that make with a-Si.This MIS type FPD has planar structure, wherein disposes with the layer identical with the layer configuration that constitutes TFT on substrate, and MIS type photoelectric sensor is set.In addition, disclose described in US-2003-0226974 number as U. S. application, the MIS type FPD of known a kind of laminar structure wherein is provided with the layer that constitutes MIS type photoelectric sensor on the layer that constitutes the TFT on the substrate.
Below with reference to the accompanying drawings, disclosing US-2003-0226974 number with U. S. application is that example is described above-mentioned FPD.In order to simplify explanation, be example with the FPD of 3 * 3 two-dimensional matrix arranged in form.
Fig. 6 shows the signal equivalent circuit diagram that U. S. application discloses the equivalent electric circuit of the traditional F PD that describes in US-2003-0226974 number.Fig. 7 is the schematic plan view that U. S. application discloses the pixel of the traditional F PD that describes in US-2003-0226974 number.Fig. 8 is the constructed profile along the line 8-8 intercepting of Fig. 7.
By the FPD of configuration as mentioned above, a plurality of photo-electric conversion elements that the light that sends from wavelength shifter according to the incident radioactive ray is applied in the opto-electronic conversion bias voltage are converted to signal charge.A plurality of switch elements are carried out transfer operation according to imposed on the drive signal that drives distribution by drive circuit, and thus, the signal charge of changing through photo-electric conversion element is transferred to signal processing circuit through signal wiring, to be read concurrently by signal processing circuit.The parallel signal charge that reads is converted to serial signal by signal processing circuit, and is that digital signal is with output by A/D converter from analog signal conversion.By aforesaid operations, can obtain the picture signal of a pixel according to the incident radioactive ray that comprise image information.
In the cross section of the FPD with above-mentioned laminar structure, described distribution is via the insulating barrier mutually insulated.Yet the reliability of cross section greatly is subjected to the influence of fabrication yield or picture quality, is starved of insulation characterisitic between the described wiring.Specifically, the signal charge that is produced by photo-electric conversion element and transmitted by switch element flows to signal wiring.Therefore, the leakage between signal wiring and another distribution has generally reduced the quality of FPD.In addition, the parasitic capacitance of signal wiring or the influence of wiring resistance make that with the noise of output image signal making to influence picture signal unfriendly.Especially, by little exposure radiological dose output signal electric charge and must have in the highly sensitive radiation detection equipment, because the little signal charge that photo-electric conversion element produces, The noise is huge, so must reduce the parasitic capacitance of signal wiring or the influence of wiring resistance.Therefore, must guarantee to cause the signal wiring of the parasitic capacitance in the signal wiring and drive insulation that wiring crossing partly locates and the insulation of the cross part office of signal wiring and bias wirings.Especially need to guarantee the insulation between signal wiring and bias wirings.In addition, need reduce parasitic capacitance or wiring resistance.To explain its reason below.
As mentioned above, first insulating barrier, first semiconductor layer and first impurity semiconductor layer are similar to these layers that are used for switch element, are present in the signal wiring of cross part office and drive between the distribution that wiring crossing partly locates.Because these layers are to form in the processing that forms switch element, layer quality is high, and because first insulating barrier is used for the gate insulating film of switch element, first insulating barrier shows very high insulation characterisitic.Therefore,, drive distribution and be formed thickly because the insulation characterisitic of the signal wiring of cross part office and driving wiring closet is high, and the distribution narrowed width, so that reduce the influence of parasitic capacitance, thereby can also reduce The noise.On the other hand, interlayer insulating film, second insulating barrier, second semiconductor layer and second impurity semiconductor layer are present between the signal wiring and bias wirings of cross part office.Because form these layers after forming switch element, their formation temperature must be lower than the tolerable temperature of switch element.Usually, because the tolerable temperature of switch element is lower than this formation temperature, the interlayer insulating film that forms in their upper strata forms with the temperature lower than the temperature of first insulating barrier.Even in the time will being used for this interlayer insulating film with the similar inorganic material of the inorganic material of first insulating barrier, because low formation temperature, its insulating properties also is low.Even when using the organic material that also plays planarization film (planarized film) effect to form interlayer dielectric, though be different from the situation of first insulating barrier, but because in most of the cases, compare with inorganic material, organic material has lower insulation characterisitic, so its insulation characterisitic has been lowered.When using MIS type photoelectric sensor, setting can be by second insulating barrier made from the material identical materials of first insulating barrier, yet as the situation of interlayer insulating film, second insulating barrier is formed with the temperature that is lower than first insulating barrier.Therefore, second insulating barrier has the insulation characterisitic that is lower than first insulating barrier.As mentioned above, the insulation characterisitic of the cross part office between signal wiring and the bias wirings is lower than the insulation characterisitic of the cross part office between signal wiring and the grid driving distribution.
On the other hand, need reduce to cause the wiring resistance of the noise in the signal wiring.For wiring resistance, usually, distribution be formed thickly or width big.Yet in the FPD that is configured to the matrix arrangement distribution, when the width of distribution is formed when big, it is big that the area of wiring closet cross part office becomes, and this has caused the increase of parasitic capacitance.Therefore, the width of distribution can not be formed so greatly.Therefore, mainly by distribution is formed the thick wiring resistance that reduces.
Yet, when forming distribution thick, being attended by the increase of jump, and being difficult to carry out little processing, this makes and is difficult to the control and treatment form.When because signal wiring has increased jump, and when handling form and worsening, be difficult to be formed uniformly by covering the interlayer dielectric that signal wiring is provided with.When inorganic material is used for interlayer insulating film, be difficult to form interlayer insulating film thick.Therefore, the interlayer insulating film that is difficult to cover the side surface of signal wiring forms and has and the similar thickness of this surperficial thickness.Therefore, the cross part office between signal wiring and bias wirings has reduced the side surface of signal wiring and the insulation characterisitic between bias wirings, has therefore increased the possibility of revealing and produce uneven line image.In other words, when forming each distribution thick for the purpose that reduces noise, wiring closet is revealed.In addition, prevent that leakage from causing improved deficiency aspect noise.
Summary of the invention
Make the present invention to address the above problem, and the object of the present invention is to provide photoelectric conversion device and radiation detection equipment, prevent the leakage that the cross section by wiring closet causes and restrain noise, this photoelectric conversion device is by comprising that piling up the photo-electric conversion element layer that comprises photo-electric conversion element on the switch element layer of switch element is configured to.Thereby can obtain high S/N ratio.Therefore, can obtain the image information of high image quality.
Comprise according to conversion equipment of the present invention and radiation detection equipment: dielectric substrate; Pixel region, described pixel region comprises: the switch element zone, wherein on the direction of row and column, be furnished with a plurality of switch elements, each switch element comprises the first metal layer that is arranged on the described dielectric substrate, is arranged on insulating barrier, first semiconductor layer and second metal level on the described metal level
The conversion element zone, wherein on the direction of row and column, be furnished with a plurality of conversion elements, each conversion element comprises the bottom electrode made by the 3rd metal level that is arranged on the described switch element zone, be arranged on second semiconductor layer on the described bottom electrode and the top electrode of making by the 4th metal level that is arranged on described second semiconductor layer and
Each pixel comprises described switch element and described conversion element; A plurality of signal wirings comprise described second metal level, and are connected to the described a plurality of switch elements on the column direction; A plurality of bias wirings comprise described the 4th metal level, and are connected to described a plurality of conversion element; With the external signal distribution part that comprises described the first metal layer in described pixel region outside, described external signal distribution partly is connected to described signal wiring, and wherein said external signal distribution part and described bias wirings are intersected mutually.
Conversion equipment of the present invention and radiation detection equipment comprise: pixel region, described pixel region comprises switch element, described switch element comprises the first metal layer that is arranged on the dielectric substrate, be arranged in the insulating barrier on the described the first metal layer, first semiconductor layer and second metal level, described pixel region also comprises conversion element, described conversion element comprises the bottom electrode of being made by the 3rd metal level that is arranged on the described switch element, be arranged on second semiconductor layer and the 4th metal level that is arranged on second semiconductor layer on the bottom electrode, described pixel region also comprises a plurality of pixels, switch element on described pixel column and the column direction and conversion element; Be connected to the signal wiring of the described a plurality of switch elements on the column direction; With the bias wirings that is connected to described a plurality of conversion elements.Cross part office between signal wiring and bias wirings, each signal wiring comprises the first metal layer, and each bias wirings comprises the 4th metal level.
According to the present invention, guaranteed the high insulation characterisitic of the signal wiring of pixel region outside and the cross part office between bias wirings.And therefore, the signal wiring of signal wiring parasitic capacitance and the electric capacity between bias wirings have been reduced to become.Thereby can restrain the noise that adds signal charge, and can obtain the picture signal of high S/N ratio.Therefore, can obtain the image information of high image quality.In addition, thick signal wiring can be set, and reduce the wiring resistance of signal wiring, thereby can improve the sensitivity of photoelectric conversion device and radiation detection equipment.
To understand other features and advantages of the present invention from the description of carrying out below in conjunction with accompanying drawing, in all figure, similarly reference number refers to identical or similar part.
Description of drawings
Accompanying drawing is merged in this specification and constitutes its part, and accompanying drawing shows embodiments of the invention, and is used from explanation principle of the present invention with this explanation one.
Fig. 1 is the conceptual plan diagram according to photoelectric conversion device of the present invention and radiation detection equipment;
Fig. 2 is the conceptual plan diagram according to first embodiment, and wherein the regional A of photoelectric conversion device and radiation detection equipment is exaggerated;
Fig. 3 is the schematic sectional view according to the photoelectric conversion device of first embodiment and radiation detection equipment;
Fig. 4 is the notion sectional view that another example of photoelectric conversion device of the present invention and radiation detection equipment is shown;
Fig. 5 illustrates the key-drawing that radiation detection equipment is applied to radiation detecting system of the present invention;
Fig. 6 is the conceptual plan diagram that traditional photoelectric conversion device and traditional radiation detection equipment are shown;
Fig. 7 is the conceptual plan diagram that a pixel of traditional photoelectric conversion device and traditional radiation detection equipment is shown; With
Fig. 8 is the notion sectional view that traditional photoelectric conversion device and traditional radiation detection equipment are shown.
Embodiment
Describe in detail below with reference to the accompanying drawings and realize best mode of the present invention.
(first embodiment)
Referring to figs. 1 to 3, describe the first embodiment of the present invention in detail.Fig. 1 is the conceptual plan diagram that illustrates according to the photoelectric conversion device and the radiation detection equipment of first embodiment of the invention.Fig. 2 is the conceptual plan diagram of the magnification region A of Fig. 1.Fig. 3 is the schematic sectional view along the line 3-3 intercepting of Fig. 2.In Fig. 1 to 3, represent the assembly identical with identical reference number, and will omit its detailed description with the assembly of the traditional F PD shown in Fig. 6 to 8.
In Fig. 1 to 3, reference number 100 expression dielectric substrate, 101 expressions are as the photo-electric conversion element of conversion element, and 102 represent switch elements, and 103 expressions drive distributions, 104 expression signal wirings, and 105 expression bias wirings.For dielectric substrate 100, can suitably use glass substrate, quartz substrate, plastic etc.Photo-electric conversion element 101 is MIS type photoelectric sensors of being made by a-Si, and switch element is the TFT that is made by a-Si, and photo-electric conversion element 101 and pixel of switch element 102 formations.These pixels are arranged to two-dimensional matrix, to constitute pixel region P.Driving distribution 103 is the distributions that are connected to the gate electrode 1 10 of a plurality of switch elements 102 of arranging on line direction, and is formed by the first metal layer M1, this first metal layer M1 be the layer with the gate electrode 110 of switch element 102 identical layer.Signal wiring 104 is to be connected to the source of a plurality of switch elements 102 of arranging on column direction or the distribution of drain electrode 114, and is formed by the second metal level M2, and this second metal level M2 is and the source of switch element or the identical layer of layer of drain electrode 114.Thereby bias wirings 105 is to be connected to upper electrode layer 120 photo-electric conversion element 101 being applied the distribution that bias voltage constitutes the transducer top electrode, and is formed by the 4th metal level M4, and the 4th metal level M4 is made by the metal material such as Al.In Fig. 2,, omit first to second insulating barrier 111 to 117 in order to simplify this figure.
According to the first embodiment of the present invention, reference number 103a represents to be connected to the driving distribution extension that each drives distribution 103 via the contact hole 126 of pixel region P outside.Driving distribution extension 103a comprises and is set to the driving distribution terminal 123 that is electrically connected with drive circuit 107.Drive distribution extension 103a and drive distribution terminal 123 and forms by the 4th metal level M4, the 4th metal level M4 with layer be identical layer as the bias wirings 105 of the top metal level in the FPD of laminar structure.Therefore, because only matcoveredn 121 can easily be formed for the opening that is electrically connected with drive circuit 107 in the structure that drives on the distribution terminal 123.Because drive distribution extension 103a and drive distribution terminal 123 by forming with layer the 4th identical metal level M4 of bias wirings 105, its surface-coated upper electrode layer 120 that is stamped is as the situation in bias wirings 105.Therefore, can prevent to drive the corrosion of the 4th metal level M4 in the distribution terminal 123.
Secondly, bias wirings 105 comprises and is set to the bias wirings terminal 125 that is electrically connected with grid bias power supply unit 109.In this case, bias wirings terminal 125 is made of the 4th metal level M4, the 4th metal level M4 be with as the identical layer of the layer of the bias wirings 105 of the top metal level among the FPD of laminar structure.Therefore, because the structure of matcoveredn 121 on bias wirings terminal 125 only easily is formed for the opening that is electrically connected with grid bias power supply unit 109.Because bias wirings terminal 125 is made of the 4th metal level M4 identical with the layer of bias wirings 105, its surface-coated upper electrode layer 120 that is stamped is as the situation in bias wirings 105.Therefore, can prevent the corrosion of the 4th metal level M4 in the bias wirings terminal 125.
Secondly, with reference to figure 3, describe the signal wiring 104 at 127 places, contact and the cross section structure that first signal wiring is drawn unit 104a in detail, first signal wiring at 128 places, contact is drawn the cross section structure that unit 104a and secondary signal distribution are drawn unit 104b, and the bias wirings 105 at crosspoint C3 place and first signal wiring cross section structure of drawing unit 104a.
In Fig. 3, reference number 111 expressions first insulating barrier, 112 expressions, first semiconductor layer, it is the layer same with the active layer of switch element 102,113 expressions, first impurity semiconductor layer, it is the layer same with the ohmic contact layer of switch element 102, and 115 expression interlayer insulating films.Reference number 116 expressions the 3rd metal level M3; it is the layer identical with sensor lower electrode; 117 expressions, second insulating barrier; it is the layer same with the insulating barrier of MIS type photoelectric sensor; 118 expressions, second semiconductor layer; it is the layer same with the photoelectric conversion layer of MIS type photoelectric sensor; 119 expressions, second impurity semiconductor layer; it is the layer same with the ohmic contact layer of MIS type photoelectric sensor; 120 expression transparent electrode layers; it is the layer same with the upper electrode layer of MIS type photoelectric sensor, and 121 expression protective layers.In this case, omit wavelength shifter 122.
In Fig. 3, provide contact 127 by in first insulating barrier 111, boring an opening.Therefore, the signal wiring that is made of the first metal layer M1 is drawn unit 104a and is electrically connected mutually by the signal wiring 104 that the second metal level M2 constitutes.By in first insulating barrier 111, first semiconductor layer 112, first impurity semiconductor layer 113, interlayer insulating film 115, second insulating barrier 117, second semiconductor layer 118 and second impurity semiconductor layer 119, and via the 3rd metal level 116, bore an opening, contact 128 is provided.Therefore, first signal wiring that is made of the first metal layer M1 is drawn unit 104a and is drawn unit 104b by the secondary signal distribution that the 4th metal level M4 constitutes and is electrically connected mutually.First signal wiring that constitutes by the first metal layer M1 draw unit 104a and the bias wirings 105 that constitutes by the 4th metal level M4 between, via first insulating barrier 111, first semiconductor layer 112, first impurity semiconductor layer 113, interlayer insulating film 115, second insulating barrier 117, second semiconductor layer 118 and second impurity semiconductor layer 119, crosspoint C3 is insulated.As the situation of other crosspoint C1 and C2, crosspoint C3 of the present invention is insulated via first insulating barrier 111 of the gate insulating film that becomes switch element 102.Because this first insulating barrier 111 is as the gate insulating film of switch element 102, thus used have low-k, the gate insulating film of big resistance and high insulating property.Therefore, by first insulating barrier 111 with low-k and high insulating property is provided at crosspoint C3 place, can reduce parasitic capacitance, and prevent the leakage of wiring closet.In addition, compare with traditional crosspoint C3, have more in intercalation, and therefore can increase by first bias wirings and draw unit 105a and first signal wiring and draw distance between unit 104a.Therefore, can further reduce parasitic capacitance.
In this embodiment, the situation of MIS type photoelectric sensor as the MIS type FPD of the laminar structure of photo-electric conversion element 101 of using described.Yet, for the similar photo-electric conversion element of the photo-electric conversion element shown in Fig. 4, can utilize the PIN type FPD that uses PIN type photodiode 131.Reference number 130 expressions have been introduced into the 3rd impurity semiconductor layer of the conductibility impurity that is different from second impurity semiconductor layer 119.In PIN type photodiode, n type a-Si layer and p type a-Si layer are applicable to second impurity semiconductor layer 119 and the 3rd impurity semiconductor layer 130 respectively.In this embodiment, described gap etching (gapetching) type TFT as situation as the TFT of switch element 102.Yet, the invention is not restricted to this.For example, can use gap baffle element (gapstopper) type TFT or the plane TFT that adopts by poly-Si TFT.In other words, in the time of in driving distribution 103, signal wiring 104 and bias wirings 105 at least three layers or the more multi-layered combination that is used to switch element 102 and photo-electric conversion element 101, can make improvement according to the present invention.According to this embodiment, by using different metal levels respectively, that is, the second metal level M2 and the 3rd metal level M3 form signal wiring 104 and source or drain electrode 114 and sensor lower electrode.Yet, the invention is not restricted to this.Can form signal wiring 104 and source or drain electrode 114 and sensor lower electrode (the 3rd metal level) 116 by using same metal level.Yet in this case, signal wiring 104 and sensor lower electrode can not be piled up mutually, and photo-electric conversion element can not be stacked on the switch element fully.Therefore, and compare by the numerical aperture of using the FPD that different metal level forms, the numerical aperture of this FPD is lower.In this embodiment, the MIS type photoelectric sensor 101 that uses second semiconductor layer of being made by a-Si 118 or the PIN type photodiode situation as the FPD of conversion element has been described.Yet, the invention is not restricted to this.Can use such FPD, it uses a-Se or CdTe is used for second semiconductor layer as conversion element and the conversion element that is used for radioactive ray directly are converted to electric charge.According to this embodiment, contact 128 is made of an opening.Yet, the invention is not restricted to this.For example, can prepare two openings, and draw unit 104a and the second metal level M2 is electrically connected mutually by first opening that is arranged in first insulating barrier by first signal wiring that the first metal layer M1 constitutes.In addition, the second metal level M2 and draw unit 104b by being arranged in the zones of different and second opening in interlayer insulating film 115, second insulating barrier 117, second semiconductor layer 118 and second impurity semiconductor layer 119 by the secondary signal distribution that the 4th metal level M4 constitutes is electrically connected mutually.
Utilize this structure, the unevenness of each opening and contact diminishes, thereby makes the formation area that can suppress opening and contact.This structure is effectively under the big situation of the unevenness change of opening and contact, is made thick as the interlayer insulating film 115 that is formed by organic insulating material, or the film of second semiconductor layer 118 is made thick so that improve under the situation of photoelectric conversion efficiency.
According to this embodiment, as shown in Figure 3, first insulating barrier 111 be arranged on the driving distribution 103 that constitutes by the first metal layer M1 separately and the signal wiring 104 that constitutes by the second metal level M2 between.Yet, the invention is not restricted to this.First insulating barrier 111, first semiconductor layer 112 and first impurity semiconductor layer 113 can be arranged on and drive between distribution 103 and the signal wiring 104.In addition, according to this embodiment, bias wirings 105 that is made of the 4th metal level M4 and secondary signal distribution are drawn unit 104b and are arranged on second insulating barrier 117.Yet, the invention is not restricted to this.Second semiconductor layer 118, second impurity semiconductor layer 119 or the 3rd impurity semiconductor layer 130 can be arranged in second insulating barrier 117 and bias wirings 105 or secondary signal distribution and draw between the unit 104b.Usually the layer configuration that is known that wiring closet forms to handle according to element and changes, and this limitation of the present invention anything but.
(second embodiment)
(example application)
Fig. 5 shows the example application of the radiodiagnosis system that uses FPD type radiation detection equipment of the present invention.
The people's 6061 that the X ray 6060 transmission process patients that send from X-ray tube 6050 maybe will check chest 6062, and incide on the radiation detection equipment 6040 that scintillator (fluorescent material) is installed on it.The X ray of incident comprises the information about patient 6061 body interior.Scintillator sends and the corresponding light of entering of X ray, and this light is carried out opto-electronic conversion, so that obtain electrical information.With this information translation is digital information, carries out image processing by 6070 pairs of these information of the image processor that becomes signal processing apparatus, and the display 6080 of display unit that can be by becoming the control room is watched.
Owing to can make many obvious and extensive different embodiment of the present invention in the case of without departing from the spirit and scope, so, the invention is not restricted to its certain embodiments unless be to be understood that qualification in the claims.
Industrial applicibility
The present invention is used for the photoelectricity in uses such as medical diagnostic equipment, nondestructive inspection equipment Conversion equipment, radioactive ray detect substrate and radiation detection equipment.
The application requires Japanese patent application 2005-201602 number submitted on July 11st, 2005 and the priority of the Japanese patent application submitted on June 30th, 2006 2006-181896 number, incorporates them into this paper by reference.
Claims (14)
1. conversion equipment comprises:
Dielectric substrate;
Pixel region, described pixel region comprises:
The switch element zone wherein is furnished with a plurality of switch elements on the direction of row and column, each switch element comprises the first metal layer that is arranged on the described dielectric substrate, is arranged on insulating barrier, first semiconductor layer and second metal level on the described metal level,
The conversion element zone, wherein on the direction of row and column, be furnished with a plurality of conversion elements, each conversion element comprises the bottom electrode of being made by the 3rd metal level that is arranged on the described switch element zone, the top electrode that is arranged on second semiconductor layer on the described bottom electrode and is made by the 4th metal level that is arranged on described second semiconductor layer, and
Each pixel comprises described switch element and described conversion element;
A plurality of signal wirings comprise described second metal level, and are connected to the described a plurality of switch elements on the column direction;
A plurality of bias wirings comprise described the 4th metal level, and are connected to described a plurality of conversion element; With
In the external signal distribution part that comprises described the first metal layer of described pixel region outside, described external signal distribution partly is connected to described signal wiring,
Wherein said external signal distribution part and described bias wirings are intersected mutually.
2. according to the conversion equipment of claim 1, wherein said switch element comprises: gate electrode, described gate electrode comprise the described the first metal layer that is formed on the described dielectric substrate; Be formed on the described insulating barrier on the described gate electrode; Be formed on described first semiconductor layer on the described insulating barrier; With source or drain electrode, described source or drain electrode comprise described second metal level that is formed on described first semiconductor layer.
3. according to the conversion equipment of claim 2, also comprise the interlayer insulating film that is arranged between described switch element zone and the described conversion element zone,
Wherein said external signal distribution part and described bias wirings are also intersected mutually in the mode that described interlayer insulating film is clipped in the middle.
4. according to the conversion equipment of claim 1, wherein said second metal level and described the 3rd metal level comprise same metal level.
5. according to the conversion equipment of claim 1, also be included in the second external signal distribution part that comprises described the 4th metal level of described pixel region outside, the described second external signal distribution partly is connected to described external signal distribution part.
6. according to the conversion equipment of claim 1, also comprise: a plurality of driving distributions, described driving distribution comprises described the first metal layer, and is connected to the described a plurality of switch elements on the line direction; With the external drive distribution part that comprises described the 4th metal level in described pixel region outside, described external drive distribution partly is connected to described driving distribution.
7. according to the conversion equipment of claim 6, wherein:
Described external drive wiring part branch comprises the first terminal;
The described second external signal wiring part branch comprises second terminal;
Described bias wirings comprises the 3rd terminal;
Drive circuit is connected to described the first terminal, to drive described switch element;
Signal processing circuit is connected to described second terminal, to handle through described conversion element electrical signal converted; And
Grid bias power supply partly is connected to described the 3rd terminal, so that described conversion element is applied bias voltage.
8. according to the conversion equipment of claim 1, wherein said conversion element is a photo-electric conversion element.
9. conversion equipment according to Claim 8, wherein said photo-electric conversion element is such photo-electric conversion element, described photo-electric conversion element also comprises second insulating barrier that is arranged between described bottom electrode and described second semiconductor layer, and is arranged in second impurity semiconductor layer between described second semiconductor layer and the described top electrode.
10. according to the conversion equipment of claim 9, wherein said photo-electric conversion element also comprises second impurity semiconductor layer that is arranged between described bottom electrode and described second semiconductor layer, and is arranged in the 3rd impurity semiconductor layer between described second semiconductor layer and the described top electrode.
11. according to the conversion equipment of claim 1, wherein said first semiconductor layer and described second semiconductor layer are made by amorphous silicon.
12. a radiation detection equipment comprises:
Conversion equipment according to claim 1; With
Be used for radioactive ray with incident be converted to visible light, be arranged in the wavelength shifter on the conversion element layer.
13. a radiation detecting system comprises:
Radiation detection equipment according to claim 12;
Be used to handle signal processing apparatus from the signal of described radiation detection equipment;
Be used to write down tape deck from the signal of described signal processing apparatus;
Be used to show display unit from the signal of described signal processing apparatus;
Be used to transmit transmission processing device from the signal of described signal processing apparatus; With
Be used to produce the radiation source of radioactive ray.
14. a conversion equipment comprises:
Dielectric substrate;
The pixel region that on the direction of row and column, comprises a plurality of pixels, each pixel comprises:
Switch element, comprise the first metal layer that is formed on the described dielectric substrate, be formed on insulating barrier, first semiconductor layer and second metal level on the described the first metal layer, and conversion element, comprise the bottom electrode made by the 3rd metal level that is formed on the described switch element, be formed on second semiconductor layer on the described bottom electrode and be formed on the 4th metal level on described second semiconductor layer;
Be connected to the signal wiring of the described a plurality of switch elements on the column direction; With the bias wirings that is connected to described a plurality of conversion elements;
Wherein in the cross part office of described signal wiring and described bias wirings, described signal wiring comprises described the first metal layer, and described bias wirings comprises described the first metal layer.
Applications Claiming Priority (3)
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| JP2005201602 | 2005-07-11 | ||
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222675A (en) * | 2010-04-13 | 2011-10-19 | 佳能株式会社 | Detection apparatus, method of manufacturing the same, and detecting system |
| CN103390623A (en) * | 2012-05-08 | 2013-11-13 | 佳能株式会社 | Method of manufacturing detection device, detection device, and detection system |
| CN103390626A (en) * | 2012-05-08 | 2013-11-13 | 佳能株式会社 | Detection device, detection system, and method of manufacturing detection device |
| CN103860184A (en) * | 2012-12-11 | 2014-06-18 | 三星电子株式会社 | Photon-counting detector and readout circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BR9510290A (en) * | 1994-12-23 | 1997-11-11 | Digirad | Semiconductor gamma ray camera and medical imaging system |
| DE60336291D1 (en) * | 2002-11-13 | 2011-04-21 | Canon Kk | Image pickup device, radiation image pickup device and radiation image pickup system |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222675A (en) * | 2010-04-13 | 2011-10-19 | 佳能株式会社 | Detection apparatus, method of manufacturing the same, and detecting system |
| CN102222675B (en) * | 2010-04-13 | 2014-05-28 | 佳能株式会社 | Detection apparatus, method of manufacturing the same, and detecting system |
| US8785873B2 (en) | 2010-04-13 | 2014-07-22 | Canon Kabushiki Kaisha | Detection apparatus, method of manufacturing the same, and detection system |
| CN103390623A (en) * | 2012-05-08 | 2013-11-13 | 佳能株式会社 | Method of manufacturing detection device, detection device, and detection system |
| CN103390626A (en) * | 2012-05-08 | 2013-11-13 | 佳能株式会社 | Detection device, detection system, and method of manufacturing detection device |
| CN103860184A (en) * | 2012-12-11 | 2014-06-18 | 三星电子株式会社 | Photon-counting detector and readout circuit |
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| CN100539171C (en) | 2009-09-09 |
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