CN100565894C - Conversion equipment, radiation detecting apparatus and radiation detecting system - Google Patents
Conversion equipment, radiation detecting apparatus and radiation detecting system Download PDFInfo
- Publication number
- CN100565894C CN100565894C CNB2006800252237A CN200680025223A CN100565894C CN 100565894 C CN100565894 C CN 100565894C CN B2006800252237 A CNB2006800252237 A CN B2006800252237A CN 200680025223 A CN200680025223 A CN 200680025223A CN 100565894 C CN100565894 C CN 100565894C
- Authority
- CN
- China
- Prior art keywords
- metal level
- semiconductor layer
- bias
- signal
- conversion element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
Conversion equipment of the present invention comprises a plurality of pixels, and described pixel comprises switch element and conversion element.Described line of pixels is listed in the pixel region, and described pixel region comprises wherein following with column direction to be arranged the switch element district of switch element and wherein follow the conversion element district of arranging conversion element with column direction.The a plurality of distributions that comprise second metal level are connected with a plurality of switch elements of column direction.The more than one bias wirings of the 4th metal level is connected with more than one conversion element.The external signal distribution of the 4th metal level outside pixel region is connected with described signal wiring.The external bias distribution of the first metal layer outside pixel region is connected with described a plurality of bias wirings.External signal distribution and external bias distribution intersect each other.
Description
Technical field
The present invention relates to be applied to the conversion equipment of the analyzer etc. of medical image diagnostic device, non-destructive detecting device, use radioactive ray, use the radiation detecting apparatus of this conversion equipment, and radiation detecting system.In the following description, the electromagnetic wave of visible light etc., X ray, alpha ray, β ray, gamma-rays etc. are included in the radioactive ray.
Background technology
By convention, the radiography that is used for medical image diagnosis is divided into the fluoroscopic radiography that is used to obtain the general radiography such as sciagraphy of still image and is used to obtain moving image.Whenever necessary, select to comprise every kind of radiography of imaging device and image pick up equipment.
In the general radiography of routine, two kinds of systems that main realization the following describes.A kind of system is screen sheet imaging (below abbreviate the SF imaging an as) system, and this system uses the screen sheet of preparing by combined with fluorescent screen and film (screen film), carries out the imaging by exposure, development and photographic fixing.Another kind of system is computerization radiography imaging (below abbreviate the CR imaging an as) system, this system is recorded as sub-image in the light stimulus fluorophor to radiation image, with laser scanning light stimulus fluorophor, thereby export the optical information consistent, and read the optical information of output by transducer with sub-image.But, in the general radiography of routine, have the process complicated problems that obtains radiation image always.The radiation image that obtains can be converted into numerical data, but is digitized indirectly.Thereby, occur needing the problem of many times of cost in order to obtain digitized radiation image data.
Secondly, in the fluoroscopic radiography of routine, mainly adopt image intensifier radiography (below abbreviate the I.I. radiography as) system, this system uses fluorescent material and electron tube.But, in the fluoroscopic radiography of routine, have use, the problem that equipment size is big owing to electron tube always.Because the visual field (detection zone) is less, the use of electron tube causes being difficult to obtaining to have the larger area image.In addition, there is use, the problem that the resolution of the image that is obtained is lower owing to electron tube always.
Thereby in recent years, attentiveness concentrates on by being used for the conversion element that converts electric charge to from the radioactive ray or the light of fluorescent material and a plurality of pixels of switch element are arranged in the sensor panel that two-dimensional matrix constitutes having always.Especially, attentiveness concentrates on the flat-panel detector (below abbreviate FPD as) always, wherein on dielectric substrate, become two-dimensional matrix ground to arrange and have, such as a plurality of pixels of the conversion element of preparations such as amorphous silicon (below abbreviate a-Si as) and the thin-film transistor for preparing by non-single crystal semiconductor (below abbreviate TFT as) by non-single crystal semiconductor.
Convert electric charge to by the radioactive ray that have image information by the conversion element handle, and by the switch element reading electric charges, FPD can obtain the signal of telecommunication based on image information.Therefore, can directly obtain image information, thereby the operation of view data (such as storage, processing and transmission) is simplified, and makes it possible to further use radiation image information as digital signal information from FPD.The feature such as sensitivity of FPD depends on the radiograph condition.But, compare with the SF or the CR imaging system of routine, confirmed identical or better characteristic.In addition, because therefore the signal of telecommunication that can directly have image information from the FPD acquisition is compared with the SF or the CR imaging system of routine, has the advantage that acquisition image time necessary is shortened.
As FPD, described in the open No.WO 93/14418 of international application, a kind of PIN type FPD is known, and described PIN type FPD uses a plurality of pixels by the PIN type photodiode that is made of a-Si and TFT is formed to be arranged in the sensor panel that two-dimensional matrix constitutes.This PIN type FPD has stepped construction, and the one deck that wherein constitutes PIN type photodiode is positioned on the one deck that constitutes TFT on the substrate.Described in U.S. Patent No. 6075256, a kind of MIS type FPD is known, and described MIS type FPD uses a plurality of pixels by the MIS type photoelectric sensor that is made of a-Si and TFT is formed to be arranged in the sensor panel that two-dimensional matrix constitutes.This MIS type FPD has planar structure, and wherein MIS type photoelectric sensor is by the layer structural arrangements identical with the layer structure that constitutes TFT on substrate.In addition, described in the open No.2003-0226974 of U. S. application, a kind of MIS type FPD of stepped construction is known, and the one deck that wherein constitutes MIS type photoelectric sensor is positioned on the one deck that constitutes TFT on the substrate.
Below with reference to accompanying drawing, open No.2003-0226974 is an example with U. S. application, and above mentioned FPD is described.For the purpose of simplifying the description, employing is arranged in the example of the FPD of 3 * 3 two-dimensional matrixs.
Figure 10 is the signal equivalent circuit diagram that is illustrated in the equivalent electric circuit of the conventional FPD of explanation among the US 2003/0226974.Figure 11 is the schematic plan view that discloses the pixel of the conventional FPD that describes among the No.2003-0226974 at U. S. application.Figure 12 is the schematic sectional view along the 12-12 line of Figure 11.
In the intersection of the FPD with above-mentioned stepped construction, distribution is by the insulating barrier mutually insulated.But, because the reliability of intersection is influenced greatly by output or picture quality, thus between distribution exigent insulating properties.Especially, the signal charge that is produced by photo-electric conversion element and transmitted by switch element flows to signal wiring.Thereby the parasitic capacitance of signal wiring or the influence of wiring resistance cause the noise of picture signal to be output, and produce the possibility that influences picture signal unfriendly.Especially, lean on the radiation detecting apparatus of little exposure dose radiation output signal electric charge must have high sensitivity, because because the signal charge that photo-electric conversion element produces is less, noise effect is bigger.Must reduce the parasitic capacitance of signal wiring or the influence of wiring resistance.Thereby, must guarantee at signal wiring and drive the insulation of the intersection of distribution, and in the insulation of the intersection of signal wiring and bias wirings (bias wiring), this causes parasitic capacitance in signal wiring.Especially must guarantee the insulation between signal wiring and the bias wirings.Its reason will illustrate below.
As mentioned above, at signal wiring with drive between the distribution of intersection of distribution and exist and similar first insulating barrier of those layers, first semiconductor layer and first impurity semiconductor layer that are used for switch element.Because these layers are to form in forming the process of switch element, therefore layer quality is higher, and first insulating barrier shows very high insulation property, because it is used to the gate insulating film of switch element.Thereby owing between signal wiring and driving distribution in intersection, insulation property are higher, therefore form thickly and drive distribution, and the distribution width is reduced, with the influence of reduction parasitic capacitance, thereby also can reduce The noise.On the other hand, between the signal wiring of intersection and bias wirings, there are interlayer insulating film, second insulating barrier, second semiconductor layer and second impurity semiconductor layer.Because these layers form after forming switch element, its formation temperature must be less than the tolerable temperature of switch element.In general, because the tolerable temperature of switch element is less than formation temperature, therefore the interlayer insulating film that forms in the layer thereon is to form under than the low temperature of the temperature of first insulating barrier.Even be used to interlayer insulating film with the similar inorganic material of first insulating barrier, because formation temperature is lower, so its insulating properties is still lower.Even use the organic material that also is used as flatted membrane to form interlayer insulating film (although being different from the situation of first insulating barrier), its insulation property are lowered, because as a rule, compare with inorganic material, and organic material has lower insulation property.When using MIS type photoelectric sensor, layout can be by second insulating barrier that constitutes with the first insulating barrier identical materials, and still the same with the situation of interlayer insulating film, second insulating barrier is to form under than the low temperature of first insulating barrier.Therefore, the insulation property of second insulating barrier are lower than first insulating barrier.As mentioned above, the insulation property of the intersection between signal wiring and the bias wirings are lower than the insulation property of the intersection between signal wiring and the driving distribution.
In addition, require to be reduced in the wiring resistance that causes noise in the signal wiring.When realizing this reduction of wiring resistance, in general, form distribution thickly or widely by its shape.But by distribution being arranged among the FPD that matrix constitutes, when width formed distribution significantly, it is big that the area of the intersection between the distribution becomes, and this causes the increase of parasitic capacitance.Thereby, be not widely to form distribution.Therefore, mainly reduce distribution electric capacity by forming distribution thickly.
But, when forming signal wiring thickly, be accompanied by the expansion of step (step).When signal wiring enlarges step, be difficult to be formed uniformly by covering the interlayer dielectric that signal wiring is arranged.When inorganic material is used for doing interlayer dielectric, be difficult to form thickly interlayer dielectric.Thereby, be difficult to form the side of signal wiring covered interlayer dielectric with the similar thickness of thickness on surface.Therefore, the intersection between signal wiring and bias wirings, between the side and bias wirings of signal wiring, insulation property are lowered, thereby have increased possibility of leaking and the possibility that produces inhomogeneous line image (line image).In other words, when forming each distribution thickly, between distribution, leak for the reduction noise.In addition, the improvement deficiency of avoiding causing the noise aspect of leakage.
Summary of the invention
In order to address the above problem, made the present invention, an object of the present invention is to provide a kind of by piling up the photoelectric conversion device that the photo-electric conversion element layer that comprises photo-electric conversion element constitutes on the switch element layer of switch element comprising, and radiation detecting apparatus, with the leakage of avoiding causing, and suppress noise by the intersection between the distribution.Thereby can obtain high S/N ratio.Therefore, can obtain the image information of high image quality.
Comprise according to conversion equipment of the present invention and radiation detecting apparatus: dielectric substrate; The pixel region that comprises switch element district and conversion element district, in described switch element district, follow with column direction and arrange a plurality of switch elements, each switch element comprises the first metal layer that is arranged on the dielectric substrate, be arranged in the insulating barrier on the first metal layer, first semiconductor layer and second metal level, in described conversion element district, follow with column direction and arrange a plurality of conversion elements, each conversion element comprises the bottom electrode that is made of the 3rd metal level that is arranged in the switch element district, be arranged in second semiconductor layer on the bottom electrode, with the top electrode that is made of the 4th metal level that is arranged on second semiconductor layer, and each pixel comprises described switch element and conversion element; The a plurality of signal wirings that comprise second metal level, described a plurality of signal wirings are connected with a plurality of switch elements of column direction; The a plurality of bias wirings that comprise the 4th metal level, described a plurality of bias wirings are connected with a plurality of conversion elements; The external signal distribution part that comprises the 4th metal level outside pixel region, described external signal distribution part is connected with signal wiring; With the external bias distribution part that comprises the first metal layer outside pixel region, described external bias distribution part is connected with a plurality of bias wirings, and wherein external signal distribution and external bias distribution intersect each other.
Conversion equipment of the present invention and radiation detecting apparatus comprise pixel region, signal wiring and bias wirings, described pixel region comprises by the first metal layer that is arranged on the dielectric substrate, be arranged in the insulating barrier on the first metal layer, the switch element that first semiconductor layer and second metal level form, comprise the bottom electrode that constitutes by the 3rd metal level that on switch element, forms, the conversion element of the top electrode that is arranged in second semiconductor layer on the bottom electrode and constitutes by the 4th metal level that is arranged on second semiconductor layer, and a plurality of pixels that comprise switch element and conversion element on the row and column direction, signal wiring is connected with a plurality of switch elements of column direction, and bias wirings is connected with a plurality of conversion elements.Intersection between signal wiring and bias wirings, each signal wiring comprises the 4th metal level, each bias wirings comprises the first metal layer.
According to the present invention, guarantee high insulation property at signal wiring outside the pixel region and the intersection between the bias wirings.Thereby the electric capacity between signal wiring and the bias wirings (it becomes the parasitic capacitance of signal wiring) is lowered.Thereby can suppress to be increased to the noise in the signal charge, can obtain the picture signal of high S/N ratio.Thereby, can obtain the image information of high image quality.In addition, can arrange thick signal wiring, and reduce the wiring resistance of signal wiring, thus the sensitivity that can improve photoelectric conversion device and radiation detecting apparatus.
In conjunction with the accompanying drawings, according to following explanation, other features and advantages of the present invention will be conspicuous, and in the accompanying drawing, identical Reference numeral is represented same or analogous part.
Description of drawings
Be included in the specification and constitute the accompanying drawing graphic extension embodiments of the invention of the part of specification, and and following explanation one be used from and explain principle of the present invention.
Fig. 1 is the conceptual plan diagram according to photoelectric conversion device of the present invention and radiation detecting apparatus;
Fig. 2 is the conceptual plan diagram according to the regional A of the wherein photoelectric conversion device of first embodiment and radiation detecting apparatus;
Fig. 3 A and 3B are according to the photoelectric conversion device of first embodiment and radiation detecting apparatus schematic sectional view;
Fig. 4 is the notion cutaway view of another example of expression amplification photoelectric conversion device of the present invention and radiation detecting apparatus;
Fig. 5 is the conceptual plan diagram according to the regional A of the wherein photoelectric conversion device of second embodiment and radiation detecting apparatus;
Fig. 6 A and 6B are according to the photoelectric conversion device of second embodiment and radiation detecting apparatus schematic sectional view;
Fig. 7 is the conceptual plan diagram according to the regional A of the wherein photoelectric conversion device of the 3rd embodiment and radiation detecting apparatus;
Fig. 8 A and 8B are according to the photoelectric conversion device of the 3rd embodiment and radiation detecting apparatus schematic sectional view;
Fig. 9 is the key diagram of expression radiation detecting apparatus to the application of radiation detecting system of the present invention;
Figure 10 is the conceptual plan diagram of the radiation detecting apparatus of conventional photoelectric conversion device of expression and routine;
Figure 11 is the conceptual plan diagram of a conventional photoelectric conversion device of expression and a pixel of the radiation detecting apparatus of routine;
Figure 12 is the notion cutaway view of the radiation detecting apparatus of conventional photoelectric conversion device of expression and routine.
Embodiment
Below with reference to accompanying drawing, describe in detail and realize best mode of the present invention.
(first embodiment)
Referring to Fig. 1-3B, describe the first embodiment of the present invention in detail.Fig. 1 is the conceptual plan diagram of expression according to the photoelectric conversion device and the radiation detecting apparatus of the first embodiment of the present invention.Fig. 2 is the conceptual plan diagram of the magnification region A of Fig. 1.Fig. 3 A is the schematic sectional view along the 3A-3A line of Fig. 2.Fig. 3 B is the schematic sectional view along the 3B-3B line of Fig. 2.In Fig. 1-3B, the assembly identical with the assembly of the conventional FPD shown in Figure 10-12 will represent that its detailed description will be omitted with identical Reference numeral.
In Fig. 1-3B, Reference numeral 100 expression dielectric substrate, 101 expression photo-electric conversion elements (it is a conversion element), 102 expression switch elements, 103 expressions drive distribution, 104 expression signal wirings, 105 expression bias wirings.Glass substrate, quartz substrate and plastic etc. is suitable for being used for dielectric substrate 100.Photo-electric conversion element 101 is the MIS type photoelectric sensors that are made of a-Si, and switch element is the TFT that is made of a-Si, and photo-electric conversion element 101 and switch element 102 constitute a pixel.Such pixel is aligned to two-dimensional matrix, to constitute pixel region P.Drive distribution 103 and be with the gate electrode 110 that follows a plurality of switch elements 102 that direction arranges and is connected, and the distribution that forms by the first metal layer M1,110 same layers of the gate electrodes of described the first metal layer M1 and switch element 102.Signal wiring 104 is to be connected with the source electrode or the drain electrode 114 of a plurality of switch elements 102 of arranging along column direction, and the distribution that is formed by the second metal level M2,114 same layers of the source electrode of described second metal level M2 and switch element or drain electrodes.Bias wirings 105 is to be connected with upper electrode layer 120, applies bias voltage to photo-electric conversion element 101, thereby constitutes the transducer top electrode, and the distribution that is formed by the 4th metal level M4, and described the 4th metal level is made by the metal material such as Al.In Fig. 2,, omitted the first～the second insulating barrier 111～117 in order to simplify accompanying drawing.
According to the first embodiment of the present invention, Reference numeral 103a represents to draw (drawing) part by the driving distribution that the contact hole outside pixel region P 126 and each driving distribution 103 are connected.The driving distribution draws part 103a and comprises the driving distribution terminal 123 that is electrically connected with drive circuit 107.Drive distribution and draw part 103a and drive distribution terminal 123 and formed by the 4th metal level M4 as the top metal level among the FPD of stepped construction, the 4th metal level M4 is one deck identical with bias wirings 105.Therefore, owing to wherein driving the structure that only has protective layer 121 on the distribution terminal 123, be easy to be formed for the perforate that is electrically connected with drive circuit 107.Distribution draws part 103a and driving distribution terminal 123 is formed by the 4th metal level M4 equally with bias wirings 105 owing to drive, and is the same with the situation of bias wirings 105, its surface coverage upper electrode layer 120.Thereby, can avoid driving the corrosion of the 4th metal level M4 in the distribution terminal 123.
Next, Reference numeral 105a represents to draw part by the contact hole outside pixel region P 128 with first bias wirings that each bias wirings 105 is connected.First bias wirings is drawn part 105a and is formed by the first metal layer M1 as the bottom metal level among the FPD of stepped construction, and the first metal layer M1 is one deck identical with driving distribution 103.First bias wirings is drawn part 105a and is drawn part 105b by the contact hole 129 and second bias wirings and be connected.Second bias wirings is drawn part 105b and is comprised the bias wirings terminal 125 that is electrically connected with bias power source part 109.In this case, bias wirings draws part 105b and bias wirings terminal 125 is formed by the 4th metal level M4 as the top metal level among the FPD of stepped construction, and the 4th metal level M4 is one deck identical with bias wirings 105.Therefore, owing to wherein on bias wirings terminal 125, only there is the structure of protective layer 121, be easy to be formed for the perforate that is electrically connected with bias power source part 109.Because bias wirings is drawn part 105b and bias wirings terminal 125 is formed by the 4th metal level M4 equally with bias wirings 105, and is the same with the situation of bias wirings 105, its surface coverage upper electrode layer 120.Thereby, can avoid the corrosion of the 4th metal level M4 in the bias wirings terminal 125.
Below with reference to Fig. 3 A, be described in detail in the bias wirings 105 of contact hole 128 and cross-section structure that first bias wirings is drawn part 105a and draw the cross-section structure that part 105a and signal wiring draw part 104a in first bias wirings of intersection C3.With reference to figure 3B, be described in detail in the signal wiring 104 of contact hole 127 and the cross-section structure that signal wiring draws part 104a.
In Fig. 3 A and 3B, Reference numeral 111 expressions first insulating barrier 111, Reference numeral 112 expression first semiconductor layers (it is one deck identical with the active layer of switch element 102), Reference numeral 113 is first impurity semiconductor layer (it is one deck identical with the ohmic contact layer of switch element 102), Reference numeral 115 expression interlayer insulating films.Reference numeral 116 expressions the 3rd metal level M3; it is one deck identical with sensor lower electrode; Reference numeral 117 expressions second insulating barrier; it is the identical one deck of insulating barrier with MIS type photoelectric sensor; Reference numeral 118 expressions second semiconductor layer; it is the identical one deck of photoelectric conversion layer with MIS type photoelectric sensor; Reference numeral 119 expressions second impurity semiconductor layer; it is the identical one deck of ohmic contact layer with MIS type photoelectric sensor; Reference numeral 120 expression transparent electrode layers; it is and identical one deck of upper electrode layer of MIS type photoelectric sensor that Reference numeral 121 is represented protective layers.Here, omitted wavelength shifter 122.
In Fig. 3 A, by boring in first insulating barrier 111, first semiconductor layer 112, first impurity semiconductor layer 113, interlayer insulating film 115, second insulating barrier 117, second semiconductor layer 118 and second impurity semiconductor layer 119, provide contact hole 128 by the 3rd metal level 116.Therefore, first bias wirings that is formed by the first metal layer M1 is drawn part 105a and is electrically connected mutually by the bias wirings 105 that the 4th metal level M4 forms.By first insulating barrier 111, first semiconductor layer 112, first impurity semiconductor layer 113, interlayer insulating film 115, second insulating barrier 117, second semiconductor layer 118 and second impurity semiconductor layer 119, intersection C3 draws part 105a and is drawn between the part 104a by the signal wiring that the 4th metal level M4 forms in first bias wirings that is formed by the first metal layer M1 and is insulated.In this case, identical with the situation of other intersection C1 and C2, by the intersection C3 of first insulating barrier, the 111 insulation first embodiment of the present invention of the gate insulating film that constitutes switch element 102.Because first insulating barrier 111 is used as the gate insulating film of switch element 102, so dielectric constant is extremely low, and use first insulating barrier 111 with big resistance and high insulating property.Thereby,, can reduce parasitic capacitance and prevent leakage between the distribution by insert first insulating barrier 111 at intersection C3 with low-k and high insulating property.Therefore compare with the intersection C3 of routine, have the layer structure of many insertions, can increase first bias wirings and draw part 105a and signal wiring and draw distance between the part 104a.Thereby, can further reduce parasitic capacitance.
Next, in Fig. 3 B,, provide contact hole 127 by the 3rd metal level 116 by boring in interlayer insulating film 115, second insulating barrier 117, second semiconductor layer 118 and second impurity semiconductor layer 119.Therefore, the signal wiring that is formed by the 4th metal level M4 draws part 104a and is electrically connected mutually by the signal wiring 104 that the second metal level M2 forms.
The same with the situation of contact hole 128, by boring in first insulating barrier 111, first semiconductor layer 112, first impurity semiconductor layer 113, interlayer insulating film 115, second insulating barrier 117, second semiconductor layer 118 and second impurity semiconductor layer 119, provide contact hole 129 by the 3rd metal level 116.Therefore, draw part 105a by first bias wirings that the first metal layer M1 forms, second bias wirings that is formed by the 4th metal level M4 draws part 105b and bias wirings terminal 125 is electrically connected mutually.
Present embodiment has illustrated the situation of MIS type photoelectric sensor as the MIS type FPD of the stepped construction of photo-electric conversion element 101 of using.But, for similar photo-electric conversion element shown in Fig. 4, can use the PIN type FPD that adopts PIN type photodiode 131.The 130th, wherein introduce the 3rd impurity semiconductor layer of the conductive impurity different with the conductive impurity of second impurity semiconductor layer 119.In PIN type photodiode, n type a-Si layer and p type a-Si layer are suitable for second impurity semiconductor layer 119 and the 3rd impurity semiconductor layer 130 respectively.Present embodiment has illustrated that gap (gap) etch pattern TFT is used as the situation of TFT (it is a switch element 102).But the present invention is not limited thereto.For example, barrier layer, gap (gap stopper) the type TFT or the plane TFT that can use multi-crystal TFT to adopt.In other words, when using the metal level that comprises three layers or more multi-layered described at least driving distribution 103, signal wiring 104 and bias wirings 105 in conjunction with switch element 102 and photo-electric conversion element 101, can obtain to improve according to the present invention.According to present embodiment, by using different metal level to form signal wiring 104 and source electrode or drain electrode 114 respectively, and sensor lower electrode, promptly, signal wiring 104 and source electrode or drain electrode 114 are formed by the second metal level M2, and sensor lower electrode is formed by the 3rd metal level M3.But the present invention is not limited thereto.Can utilize identical metal level to form signal wiring 104, source electrode or drain electrode 114 and sensor lower electrode (the 3rd metal level) 116.But in this case, signal wiring 104 and sensor lower electrode can not be piled up mutually, and photo-electric conversion element can not be stacked on the switch element fully.Thereby, to compare with the numerical aperture of the FPD that utilizes different metal levels to form, the numerical aperture of this FPD is lower.Present embodiment has illustrated the MIS type photoelectric sensor 101 that utilizes second semiconductor layer of being made by a-Si 118 or the PIN type photodiode situation as the FPD of conversion element of using.But the present invention is not limited thereto.Can adopt the a-Se that is used for second semiconductor layer or CdTe as conversion element, perhaps directly radioactive ray be converted to the FPD of the conversion element of electric charge.
(second embodiment)
Referring to Fig. 5-6B, describe the second embodiment of the present invention in detail.Fig. 5 is the conceptual plan diagram of the regional A of enlarged drawing 1 wherein.Fig. 6 A is the schematic sectional view along the 6A-6A line of Fig. 5, and Fig. 6 B is the schematic sectional view along the 6B-6B line of Fig. 5.In Fig. 5-6B, and the assembly of the conventional FPD shown in Figure 10-12, and the identical assembly of the assembly of first embodiment shown in Fig. 1-3B represents that with identical Reference numeral its detailed description will be omitted.
Contact hole 128 according to first embodiment is to form by the 3rd metal level 116 that places first bias wirings to draw the perforate (opening) on the part 105a.And according to the contact 128 of second embodiment ' be to form by the 3rd metal level 116 that places first bias wirings to draw two perforates on the part 105a.This is the difference between first embodiment and second embodiment.In addition, according to first embodiment, contact hole 127 is that the 3rd metal level 116 by the tapping on the signal wiring 104 forms.In second embodiment, contact layer 127 ' be by the tapping on the signal wiring 104 and not the 3rd metal level 116 of the tapping on signal wiring 104 form.In this respect, second embodiment is different from first embodiment.
According to present embodiment, as shown in Fig. 6 A, first perforate 132 is formed at first bias wirings and draws in first insulating barrier 111, first semiconductor layer 112, first impurity semiconductor layer 113 and the interlayer insulating film 115 on the part 105a.Drawing part 105a in first perforate, 132, the first bias wirings is electrically connected with the 3rd metal level 116.Second perforate 133 is placed in second insulating barrier 117, second semiconductor layer 118 and second impurity semiconductor layer 119 on the 3rd metal level 116, and the 3rd metal level 116 and bias wirings 105 are electrically connected mutually by second perforate 133.Therefore, form first bias wirings draw the contact 128 of part 105a and bias wirings 105 '.
The same with the situation of first embodiment, by first insulating barrier 111, first semiconductor layer 112, first impurity semiconductor layer 113, interlayer insulating film 115, second insulating barrier 117, second semiconductor layer 118 and second impurity semiconductor layer 119, the intersection C3 of present embodiment draws part 105a and is drawn between the part 104a by the signal wiring that the 4th metal level M4 forms in first bias wirings that is formed by the first metal layer M1 and is insulated.Thereby, the same with the situation of first embodiment, can reduce parasitic capacitance, and avoid the leakage between the distribution.
Next, as shown in Fig. 6 B, the 3rd perforate 134 is placed in the interlayer insulating film 115 on the signal wiring 104, and signal wiring 104 and the 3rd metal level 116 are electrically connected mutually by the 3rd perforate 134.The 4th perforate 135 is placed in second insulating barrier 117, second semiconductor layer 118 and second impurity semiconductor layer 119 on the 3rd metal level 116, and the 3rd metal level 116 and signal wiring draw part 104a and be electrically connected mutually by the 4th perforate 135.Therefore, form the contact 127 that signal wiring 104 and signal wiring draw part 104a '.
Make under the bigger situation of step (step) between perforate and the contact the first embodiment advantageous particularly.For example organic insulating material is used as interlayer insulating film 115, promptly is this situation so can make the thickness of interlayer insulating film bigger.In addition, in order to improve photoelectric conversion efficiency, making the thickness of second semiconductor layer 118 bigger also is such situation.When the step in perforate or the contact became big, the area of perforate or contact is corresponding to be increased.Thereby according to present embodiment, by constituting perforate and contact independently, the step of perforate and contact is reduced one by one, thereby can limit the formation area of perforate and contact.
(the 3rd embodiment)
Referring to Fig. 7-8B, describe the third embodiment of the present invention in detail.Fig. 7 is the conceptual plan diagram of the regional A of enlarged drawing 1 wherein.Fig. 8 A is the schematic sectional view along the 8A-8A line of Fig. 7, and Fig. 8 B is the schematic sectional view along the 8B-8B line of Fig. 7.In Fig. 7-8B, and the assembly of the conventional FPD shown in Figure 10-12, the assembly of first embodiment shown in Fig. 1-3B, and the identical assembly of the assembly of second embodiment shown in Fig. 5-6B represents that with identical Reference numeral its detailed description will be omitted.
According to second embodiment, contact 128 ' be to form by the 3rd metal level 116 that draws two tappings on the part 105a in first bias wirings.According to the 3rd embodiment, contact 128 " is to form by the 3rd metal level 116 that draws the tapping on the part 105a in first bias wirings and do not draw the tapping on the part 105a in first bias wirings.The contact 127 of second embodiment ' be is by being arranged in the perforate in the signal wiring 104 and being arranged in that the 3rd metal level 116 in the perforate of a certain position on signal wiring 104 not forms.In this respect, the 3rd embodiment and second embodiment are similar, but their layout difference.
According to present embodiment, as shown in Fig. 8 A, the 5th perforate 136 is disposed in first bias wirings and draws in first insulating barrier 111, first semiconductor layer 112, first impurity semiconductor layer 113 and the interlayer insulating film 115 on the part 105a.First bias wirings is drawn part 105a and is electrically connected mutually by the 5th perforate 136 with the 3rd metal level 116.The 6th perforate (not shown) is disposed in second insulating barrier 117, second semiconductor layer 118 and second impurity semiconductor layer 119 on the 3rd metal level 116, and the 3rd metal level 116 and bias wirings 105 are electrically connected mutually by the 6th perforate.Therefore, form the contact 128 that first bias wirings is drawn part 105a and bias wirings 105 ".
The same with the situation of first and second embodiment, by first insulating barrier 111, first semiconductor layer 112, first impurity semiconductor layer 113, interlayer insulating film 115, second insulating barrier 117, second semiconductor layer 118 and second impurity semiconductor layer 119, the intersection C3 of present embodiment draws part 105a and is drawn between the part 104a by the signal wiring that the 4th metal level M4 forms in first bias wirings that is formed by the first metal layer M1 and is insulated.Thereby, the same with the situation of first and second embodiment, can reduce parasitic capacitance, and avoid the leakage between the distribution.
Next, as shown in Fig. 8 B, minion hole 137 is disposed in the interlayer insulating film 115 on the signal wiring 104, and signal wiring 104 and the 3rd metal level 116 are electrically connected mutually by minion hole 137.Octavo hole 138 is disposed in second insulating barrier 117, second semiconductor layer 118 and second impurity semiconductor layer 119 on the 3rd metal level 116, and the 3rd metal level 116 and signal wiring draw part 104a and be electrically connected mutually by octavo hole 138.Therefore, form the contact 127 that signal wiring 104 and signal wiring draw part 104a ".
According to present embodiment, the same with the situation of second embodiment, by constituting perforate and contact independently, the step of perforate and contact is reduced one by one, thereby can limit the formation area of perforate and contact.
(the 4th embodiment)
(example application)
Fig. 9 represents to use the example application of the radiodiagnosis system of FPD type radiation detecting apparatus of the present invention.
The X ray 6060 that sends from X-ray tube 6050 sees through examine patient or people's 6061 chest 6062, and incides the radiation detecting apparatus 6040 that scintillator (fluorescent material) is housed on it.The X ray of incident comprises the information relevant with patient 6061 body interior.Scintillator sends the light corresponding with the incident of X ray, and described light is through opto-electronic conversion, thus the acquisition electrical information.This information is converted into digital information, carries out image processing by image processor 6070 (signal processing apparatus), and can be shown device 6080 observations, and described display 6080 is the display unit in control room.
Because under the situation that does not break away from the spirit and scope of the present invention, can make many visibly different embodiment of the present invention, therefore except as limiting in the claim, the present invention is not limited to specific embodiment.
The present invention is used for photoelectric conversion device, and radioactive ray detect photosensitive layer and radiation detecting apparatus, described photoelectric conversion device, and radioactive ray detect photosensitive layer and radiation detecting apparatus is used for medical diagnostic equipment, non-destructive detecting device or the like.
The application requires the Japanese patent application No.2005-201604 that submits on July 11st, 2005 and on June 30th, 2006 and the priority of 2006-181891, and described application is drawn at this and is reference.
Claims (16)
1, a kind of conversion equipment comprises:
Dielectric substrate;
Pixel region, described pixel region comprises
The switch element district wherein follows with column direction and arranges a plurality of switch elements, and each switch element comprises the first metal layer that is arranged on the dielectric substrate, is arranged in gate insulator, first semiconductor layer and second metal level on the first metal layer,
The conversion element district, wherein follow with column direction and arrange a plurality of conversion elements, each conversion element comprises the bottom electrode that is made of the 3rd metal level that is arranged in the switch element district, be arranged in second semiconductor layer on the bottom electrode and be arranged in the top electrode that is made of the 4th metal level on second semiconductor layer, and
Each pixel comprises described switch element and described conversion element;
The a plurality of signal wirings that comprise second metal level, signal wiring is connected with the source electrode or the drain electrode of a plurality of switch elements of column direction;
The a plurality of bias wirings that comprise the 4th metal level, bias wirings is connected with a plurality of conversion elements;
The external signal distribution part that comprises the 4th metal level outside pixel region, described external signal distribution part is connected with signal wiring; With
The external bias distribution part that comprises the first metal layer outside pixel region, described external bias distribution part is connected with a plurality of bias wirings,
Wherein external signal distribution part and external bias distribution partly intersect each other.
2, according to the described conversion equipment of claim 1, wherein switch element comprises the gate electrode that comprises the first metal layer that is arranged on the dielectric substrate, is arranged in gate insulator on the gate electrode, is arranged in first semiconductor layer on the gate insulator and is arranged in source that comprises second metal level or drain electrode on first semiconductor layer.
3, according to the described conversion equipment of claim 1, wherein bias wirings is connected with a plurality of conversion elements of column direction, external bias distribution part with follow a plurality of bias wirings that direction is arranged in parallel and be connected, and external signal distribution part and external bias distribution partly intersect each other by clipping first insulating barrier at least.
4, according to the described conversion equipment of claim 3, wherein first insulating barrier is formed by identical layer with described gate insulator.
5, according to the described conversion equipment of claim 3, also comprise the interlayer insulating film that is arranged between switch element district and the conversion element district,
Wherein external signal distribution part and external bias distribution part also intersect each other by clipping described interlayer insulating film.
6, according to the described conversion equipment of claim 1, wherein second metal level comprises identical metal level with the 3rd metal level.
7, according to the described conversion equipment of claim 1, the second external bias distribution part that also is included in outside the pixel region, contains the 4th metal level and partly be connected with the external bias distribution.
8, according to the described conversion equipment of claim 1, also comprise a plurality of driving distributions that contain the first metal layer and be connected with the gate electrode of a plurality of switch elements of line direction, with outside pixel region contain the 4th metal level and with drive the external drive distribution part that distribution is connected.
9, according to the described conversion equipment of claim 8, wherein:
External drive wiring part branch comprises the first terminal;
External signal wiring part branch comprises second terminal;
The second external bias wiring part branch comprises the 3rd terminal;
Drive circuit is connected with the first terminal, thus driving switch element;
Signal processing circuit is connected with second terminal, thus treatment conversion element electrical signal converted; With
Bias power source part is connected with the 3rd terminal, thereby conversion element is applied bias voltage.
10, according to the described conversion equipment of claim 1, wherein conversion element is a photo-electric conversion element.
11, according to the described conversion equipment of claim 10, wherein photo-electric conversion element is also to comprise the photo-electric conversion element that is arranged in second insulating barrier between the bottom electrode and second semiconductor layer and is arranged in second impurity semiconductor layer between second semiconductor layer and the top electrode.
12, according to the described conversion equipment of claim 10, wherein photo-electric conversion element also comprises and is arranged in second impurity semiconductor layer between the bottom electrode and second semiconductor layer and is arranged in the 3rd impurity semiconductor layer between second semiconductor layer and the top electrode.
13, according to the described conversion equipment of claim 1, wherein first semiconductor layer and second semiconductor layer are made by amorphous silicon.
14, a kind of radiation detecting apparatus comprises:
According to the described conversion equipment of claim 1; With
Be arranged in the wavelength shifter in the conversion element district, described wavelength shifter is used for the incident radioactive ray are converted to can be by the light of the wave-length coverage of visible light conversion element perception.
15, a kind of radiation detecting system comprises:
According to the described radiation detecting apparatus of claim 14;
Processing is from the signal processing apparatus of the signal of radiation detecting apparatus;
Record is from the tape deck of the signal of signal processing apparatus;
Demonstration is from the display unit of the signal of signal processing apparatus;
Send transmission processing device from the signal of signal processing unit; With
Produce the radiation source of radioactive ray.
16, a kind of conversion equipment comprises:
Dielectric substrate;
Pixel region, described pixel region comprise a plurality of pixels on the row and column direction, and each pixel comprises:
Switch element, described switch element comprise the first metal layer that is arranged on the dielectric substrate, be arranged on the first metal layer gate insulator, first semiconductor layer and second metal level and
Conversion element, described conversion element comprise the bottom electrode that is made of the 3rd metal level that is arranged on the switch element, be arranged in second semiconductor layer on the bottom electrode and be arranged in the top electrode that is made of the 4th metal level on second semiconductor layer;
With the source electrode of a plurality of switch elements of column direction or the signal wiring that drain electrode is connected; With
The bias wirings that is connected with a plurality of conversion elements,
The intersection between signal wiring and bias wirings wherein, signal wiring comprises the 4th metal level, bias wirings comprises the first metal layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005201604 | 2005-07-11 | ||
| JP201604/2005 | 2005-07-11 | ||
| JP181891/2006 | 2006-06-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101218679A CN101218679A (en) | 2008-07-09 |
| CN100565894C true CN100565894C (en) | 2009-12-02 |
Family
ID=39624302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006800252237A Expired - Fee Related CN100565894C (en) | 2005-07-11 | 2006-07-10 | Conversion equipment, radiation detecting apparatus and radiation detecting system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100565894C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011242261A (en) * | 2010-05-18 | 2011-12-01 | Fujifilm Corp | Radiation detector |
| JP5700973B2 (en) * | 2010-08-05 | 2015-04-15 | キヤノン株式会社 | Detection apparatus and radiation detection system |
| WO2021208063A1 (en) * | 2020-04-17 | 2021-10-21 | 京东方科技集团股份有限公司 | Flat panel detector substrate and method for manufacturing same, and flat panel detector |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1485655A (en) * | 2002-09-23 | 2004-03-31 | 统宝光电股份有限公司 | Pixel arrangement of the thin film transistor LCD |
-
2006
- 2006-07-10 CN CNB2006800252237A patent/CN100565894C/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1485655A (en) * | 2002-09-23 | 2004-03-31 | 统宝光电股份有限公司 | Pixel arrangement of the thin film transistor LCD |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101218679A (en) | 2008-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5043373B2 (en) | Conversion device, radiation detection device, and radiation detection system | |
| JP5043374B2 (en) | Conversion device, radiation detection device, and radiation detection system | |
| CN101842901B (en) | Manufacturing method of radiation detecting apparatus, and radiation detecting apparatus and radiation imaging system | |
| JP4498283B2 (en) | Imaging apparatus, radiation imaging apparatus, and manufacturing method thereof | |
| CN101682687B (en) | Radiation detecting apparatus and radiation imaging system | |
| US6353228B1 (en) | Photosensor, and radiation detection apparatus and system | |
| EP1420453B1 (en) | Image pickup apparatus, radiation image pickup apparatus and radiation image pickup system | |
| US6847039B2 (en) | Photodetecting device, radiation detecting device, and radiation imaging system | |
| US20100277630A1 (en) | Imaging apparatus and radiation imaging apparatus | |
| US8816294B2 (en) | Photo diode for detecting X-ray and manufacturing method thereof | |
| CN101509977B (en) | X-ray detector and manufacturing method thereof | |
| US7576327B2 (en) | Radiation image detector and driving method for the same | |
| EP2270859A2 (en) | Photoelectric conversion apparatus and radiographic imaging apparatus | |
| JP2009087960A (en) | Sensor panel and image detector | |
| US7488944B2 (en) | Radiation image detector | |
| CN100565894C (en) | Conversion equipment, radiation detecting apparatus and radiation detecting system | |
| CN100539171C (en) | Conversion equipment, radiation detection equipment and radiation detecting system | |
| US6600157B2 (en) | Semiconductor device, and radiation detection device and radiation detection system having same | |
| EP0523784A1 (en) | An image detector and a method of manufacturing such an image detector | |
| JP2007294900A (en) | Imaging apparatus | |
| JP2006186031A (en) | Photoelectric conversion device and radiation imager |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091202 Termination date: 20170710 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |