CN101217175B - A structure of semiconductor luminous device with wide spectrum photo-emission function and its manufacture method - Google Patents
A structure of semiconductor luminous device with wide spectrum photo-emission function and its manufacture method Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 238000001228 spectrum Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title description 7
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 claims abstract description 86
- 230000012010 growth Effects 0.000 claims abstract description 76
- 239000000463 material Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000002360 preparation method Methods 0.000 claims abstract description 13
- 230000007704 transition Effects 0.000 claims abstract description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 6
- 239000000376 reactant Substances 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 239000005416 organic matter Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 50
- 229910002601 GaN Inorganic materials 0.000 description 23
- 230000006798 recombination Effects 0.000 description 22
- 238000005215 recombination Methods 0.000 description 20
- 230000005855 radiation Effects 0.000 description 19
- 238000013461 design Methods 0.000 description 9
- 238000011160 research Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to a semiconductor light-emitting device with wide spectrum light emission function and the preparation method, including a substrate material, a transition layer which directly grows on the substrate and a GaN or n-GaN which is arranged on the transition layer, a plurality of layers of quantum well active regions: a nitride quantum structure luminous layer with the wide spectrum light emission function is a quantum well structure, which is composed of an InxGa1-xN well layer and an InyGa1-yN barrier layer, wherein, 1 is more than x which is more than y which is not less than 0, the x and y in the quantum well structure is spacially even in the layers; the well/barrier double layers of the quantum well structure repeat 1 to 10 periods; a top layer nitride, GaN or p-GaN, the thickness of the top layer nitride is 0.02 to 2 microns; the invention further comprises multiple luminous centers which can emit light which contains the continuous spectrum with the nano-scope of 360 to 900. The nitride semiconductor material is obtained by the epitaxial growth of a metal-organic chemical vapor deposition (MOCVD) epitaxial growth system.
Description
One, technical field
The present invention relates to a kind of device and preparation method of semiconductor light emitting, especially utilize the novel semi-conductor quantum structure to realize the luminous method of wide range multiband.
Two, technical background
Semiconductor photoelectronic device is the important role of play more and more in scientific research and daily life.Increasingly extensive practical application is to the requirement variation more of opto-electronic device.It is little that light emitting semiconductor device has a volume, efficient height and life-span long a bit, be widely used in indication, show and lighting field.According to the band structure of semi-conducting material own, the electron hole radiation recombination usually occurs in the very limited energy range.At this moment light emitting semiconductor device has narrower luminous spectral pattern usually, and just monochromaticjty is very good, and this is extraordinary characteristic in a lot of applications (as the panchromatic demonstration of large-screen).Yet, in some other application, often need to surpass a kind of light source of color, if adopt traditional light emitting semiconductor device, just must a plurality of combination of devices use.This has not only increased the complexity of system, has more reduced the reliabilities of system owing to the operating characteristic difference of each device.Utilize semi-conducting material, a kind of single active structure that can launch multiple color of design invention is to address the above problem, and realizes the effective way of multiband emission.
The III hi-nitride semiconductor material is widely used in the short-wavelength light ballistic device with the excellent specific property of its broad stopband.Yet some the exclusive material property problems in this nitride material system still are not fully utilized.Since the people such as Nakamura of Nichia company in 1991 successfully develop the blue light-emitting diode (LED) of GaN base, the research of III hi-nitride semiconductor material and device has obtained development rapidly.High efficiency short wavelength LED and laser are succeeded in developing [S.Naka-mura, M.Senoh, S.Nagahama, N.Iwasa, T.Yamada, T.Matsushita, Y.Sugimoto, and H.Kiyoku, Jpn.J.Appl.Phys.36, L1059 (1997) .].The Multiple Quantum Well of InGaN base (MQWs) structure is the core texture of all these devices.At present, compound physical image and the rule of charge carrier still do not come to a conclusion in the nitride.The model and the description that propose have a lot [S.Chichibu, T.Azuhata, T.Sota, and S.Nakamura, Appl.Phys.Lett.70,2822 (1997); S.Chichibu, M.Arita, H.Nakanishi, J.Nishio, L.Sugiura, Y.Kokubun, and K.Itaya, J.Appl.Phys.83,2860 (1998); Y.Narukawa, Y.Kawakami, M.Funato, Sz.Fujita, Sg.Fujita, andS.Nakamura, Appl.Phys.Lett.70,981 (1997); G.Pozina, J.P.Bergman, B.Monemar, T.Takeuchi, H.Amano, and I.Akasaki, J.Appl.Phys.88,2677 (2000)], mainly concentrate on three kinds of models for a long time: the thickness in monolayer in (1) heterostructure rises and falls, this causes comprising the quantum well of multiple different actual (real) thickness in total, different quantum well have different quantum limit effects to charge carrier; (2) the space uneven distribution of component in the structure and stress, this causes existing the fluctuating of potential well in total; (3) be separated completely, this causes comprising in the structure quantum well of complete different component.The common feature of these models is that the variation of complex act causes with the fluctuating around a certain parameter, as the fluctuating of thickness or the fluctuating of component.And, for a long time,, think that this fluctuating causes the structure of similar quantum dot to form by the observation of transmission electron microscope (TEM).Bluring of this essential laws directly causes slow with the progress of device research about the nitride structure design at present.
Utilize nitride-based semiconductor to realize that polychrome and even the emission of panchromatic light are nitride research and the forward position focus of using always.But for common nitride blue green light luminescent device, be to utilize the nitride multi-quantum pit structure, can only realize the light emission of high efficiency specific wavelength, this is that the characteristic of device active region quantum structure determines.Realize the multiwave light emission of wide range, need carry out special design luminescent active region.
Realize the multiband light method for transmitting in III-V group-III nitride semiconductor structure, because the restriction of past on material growing technology and material property research level, the achievement in research of this respect seldom.Research report the earliest sees 2002, by the Japanese NICHIA [M.Yamada of company report, Y.Narukawa, and T.Mukai, " Phosphor FreeHigh-Luminous-Efficiency White Light-Emitting DiodesComposed of InGaNMulti-Quantum Well ", Jpn.J.Appl.Phys.Vol.41 (2002) pp.L 246-L 248].Adopt the InGaN quantum well that is arranged in order different component in this report, the realization multiband is launched simultaneously.Yet the Multiple Quantum Well of this combination is at different wavelength, and it is huge that luminous efficiency differs.This mainly is the quantum well owing to high component, and it is big that the pressurized electric field effects becomes, and causes decrease in efficiency.In order to overcome the piezoelectricity influence in the above-mentioned work, the Epitech TechnologyCooperation in Taiwan at 2006 annual reports mix to arrange the latest result [S.C.Shei of different component InGaN quantum well radiation, J.K.Sheu, C.M.Tsai, W.C.Lai, M.L Lee, C.H.Kuo, " Emission Mechanism ofMixed-Color InGaN/GaN Multi-Quantum-Well Light-Emitting Diodes ", Jpn.J.Appl.Phys., Vol.45, No.4A, 2006, pp.2463-2466].Comparatively speaking, the luminous efficiency of high In ingredient quantum well has had raising.Weak point is, the spectrum of bright dipping is with different injection levels, and emission spectra changes too violent, shows certain unsteadiness.Another similar result of study is just reported [M.Funato in June, 2006, T.Kotani, T.Kondou, Y.Kawakami, Y.Narukawa, T.Mukai, " Tailored emission colorsynthesis using microfacet quantum wells consisting of nitride semiconductors withoutphosphors ", Appl.Phys.Lett., Vol.88 (26), 2006, Art.No.261920].What it adopted is the horizontal extension technology, grows the aufwuchsplate along different crystal faces.After the growing InGaN quantum well, atomic migration and mismatch properties owing to different crystal faces cause the InGaN quantum well emission gold-tinted on (0002) face thereon, and the InGaN quantum well emission blue light on (11-22) face.There is important disadvantages in this method by the selection growth, and subject matter is the aufwuchsplate joint portion at different crystal faces, exists a large amount of and various defectives that concentrate, and these defectives all penetrate luminescent active region, causes the luminescent properties of structure to reduce.
Three, summary of the invention
The present invention seeks to: utilize the epitaxial growth of semiconductor material growing system, in the group iii nitride semiconductor material system, a kind of single nitride-based semiconductor active structure and preparation method that can launch multiple color of design invention.The object of the invention is especially: need not be by other light-converting materials, at group iii nitride semiconductor (gallium nitride, indium nitride, ternary and quaternary alloy that aluminium nitride and their are formed) in the quantum device structure, by preparation method of the present invention, realize the multiwave luminescent spectrum wideer than common semiconductor light emitting spectrum.
Technical solution of the present invention: have the light emitting semiconductor device structure of wide range emission function, comprise backing material, backing material comprises sapphire, carborundum or silicon; The bottom nitride: comprise the transition zone that is grown directly upon on the substrate and on GaN or n-GaN, described transition bed thickness 5-50 nanometer, GaN or n-GaN bed thickness 2-8 micron; The multi layer quantum well active area: the InGsN quantum well, the trap bed thickness 2-10 nanometer of described quantum well structure is built bed thickness 4-20 nanometer; The trap of described quantum well structure/base is double-deck repeats 1-10 cycle; The top layer nitride, GaN or p-GaN, the thick 0.02-2 micron of described top layer nitride.Nitride problem quantum structure luminescent layer with wide range emission function is a quantum well structure, by In
xGa
1-xN trap layer and In
yGa
1-yN builds layer and constitutes, and contains multiple luminescence center, wherein 1＞x＞y 〉=0.X in the described quantum well structure and y separately the layer in be that the space is uniform.The light emitting semiconductor device structure is semiconductor light-emitting-diode especially.
The nitride problem quantum structure luminescent layer that has the wide range emission function in the nitride semiconductor photogenerator structure; The multiple luminescence center of described quantum well structure sends the continuous spectrum that comprises the 360-900 nanometer range jointly.
Have the preparation method of the light emitting semiconductor device of wide range emission function, may further comprise the steps:
A., the backing material of a nitride semiconductor epitaxial growth is provided;
B. the bottom nitride material of epitaxial growth nitride semiconductor photogenerator structure;
C. epitaxial growth has the nitride-based semiconductor quantum structure luminescent layer of wide range emission function;
D. the top layer nitride material of epitaxial growth nitride semiconductor photogenerator structure;
E. nitride semi-conductor material all utilizes the epitaxial growth of metal organic-matter chemical vapor phase epitaxy (MOCVD) epitaxial growth system to obtain; The nitride-based semiconductor of growing down at high temperature (900-1100 ℃) can be silane (SiH
4) nitride semi-conductor material that mixes.
The growth of top layer nitride material is in down growth of high temperature (900-1100 ℃), also can use p type dopant (Cp for example simultaneously
2Mg).The epitaxial growth of bottom nitride material comprises: at the excessive layer of the following growing nitride semiconductor of low temperature (500-700 ℃) with at the following growing nitride semiconductor of high temperature (900-1100 ℃).In high temperature (900-1100 ℃) the following semi-conductive while of growing nitride, can use silane (SiH
4) mix.The nitride semiconductor light-emitting layer is a quantum well structure, respectively epitaxial growth In
xGa
1-xN trap layer and In
yGa
1-yN builds layer, and contains multiple luminescence center, wherein 1＞x＞y 〉=0.Double-deck growth in trap in the quantum well structure/base can repeat 1-10 cycle; In the described quantum well structure, component x and y are evenly growths of space in layer separately, and wherein better xy scope is 0.5＞x＞y 〉=0.The growth thickness of quantum well structure is: trap bed thickness 2-10 nanometer, build bed thickness 4-20 nanometer; The growth of described quantum well structure is that (wherein the ratio of hydrogen and nitrogen per minute normal flow is between 0.1 to 10 for ratio reactant ratio by hydrogen, nitrogen, ammonia and the source metal that changes growing surface, the ratio of hydrogen and ammonia per minute normal flow is between 0.1 to 10, the ratio of ammonia and source metal molal quantity flow is between 1500 to 20000), producing multiple luminescence center, can to send the continuous spectrum that comprises the 360-900 nanometer range luminous.
Particularly: the growth preparation method of multiple level emission group iii nitride semiconductor quantum structure also comprises: word in kind such as following material installation only is used for for example, and the nitride-based semiconductor quantum structure adopts epitaxial growth, as the MOCVD method, is prepared.At first provide the substrate of a suitable nitride epitaxial growth, as sapphire wafer.Through behind the cleaning surfaces, sapphire wafer is loaded into the growth room of epitaxial growth equipment.At first certain thickness basic unit nitride material is grown on the substrate with the growth conditions that matches, be grown on the suitable low temperature buffer layer as GaN, this layer also can mix and (as sila matter, in high temperature (900-1100 ℃) the following semi-conductive while of growing nitride, can use silane (SiH
4) mix.The scope of mixing is 5 * 10
16/ cm
3To 5 * 10
19/ cm
3) to satisfy the designs requirement.On the nitride epitaxial layer of this basic unit, the nitride material epitaxial loayer of alternating growth broad stopband and low energy gap forms the heterogeneous quantum structure that is clipped in the epitaxial loayer of multilayer broad stopband subsequently, and as photoemissive active layer, as the InGaN quantum well layer.And in the epitaxial loayer of this repetition, keep the component of III-nitride material identical respectively.The heterogeneous quantum structure of this multilayer also comprises the structure of having only one deck active layer, as single heterojunction or single quantum.In order in this multi-layer quantum structure, to form multiple radiation recombination level structure, in the active layer growth, change the reactant ratio of growing surface, as changing the ratio of hydrogen, nitrogen, ammonia or source metal.The variation of this growing environment makes the crystalline state of corresponding active layer change to some extent, causes the change of electronic energy level structure in this layer, and final formation has the multiple radiation recombination level structure of composite attribute simultaneously.After this multi-layer quantum structure growth finishes, can continued growth on it cover other nitride epitaxial layer, as p type aluminum gallium nitride or p type gallium nitride, to satisfy the functional requirement of device.
Realize the emission of wide range light in the light emitting semiconductor device of the present invention: realize physical Design, material growth and the structural homogeneity control of multiple level emission group iii nitride semiconductor quantum structure.Utilize the multiple radiation recombination energy level of high-efficiency high-density, reduce piezoelectric effect, elimination is separated, and high-crystal quality reduces point defect, reduce non-radiative recombination center density, in one group of quantum well structure, formation has the multiple energy level band structure of radiation recombination ability, thereby realizes the novel multi-level III-nitride quantum structure that has, the acquisition multiple level is launched, and sends to have multiwave wide emission spectrum.
The key issue that the present invention solves: common InGaN quantum well, determined that by the photoelectric characteristic of its structure the radiation recombination energy level all occurs in the narrower energy range, promptly glow peak is more sharp-pointed.One of key of the present invention is to design multiple radiation recombination level structure, and has high efficiency radiation recombination light emission.Be combined into group iii nitride semiconductor quantum structure by component and multiple radiation recombination level density in the control quantum well in this invention with multiple level emission characteristics.By utilizing the interaction between the multiple radiation recombination energy level, distribute with the charge carrier that changes multiple energy level simultaneously, the compacting electroacoustic interacts, and reduces the probability of auger recombination, realizes that efficient multiband launches simultaneously.
Mechanism of the present invention mainly is to rely on the multiple radiation recombination level structure of nitride-based semiconductor quantum structure itself to realize the emission of wide range multiband light.In this nitride-based semiconductor quantum structure process with multiple radiation recombination level structure of preparation, mainly be that reactant ratio by the control growing surface changes the crystalline state in this quantum structure, formation has the multiple energy level band structure of radiation recombination ability, reduces non-radiative recombination center density; According to electronics and hole migration rule, the bulk of design flow minor structure has finally been modulated electronics and has been distributed at each energy level then.These all with results reported is different fully.(1) quantum structure that has wide range multiband light emissivities among the present invention all is made of nitride-based semiconductor, does not need other additional materials to realize multiband lights emission.(2) in the quantum structure in the present invention, the component of the active layer III-nitride material that multilayer repeats is identical, is different from aforementioned combination different component active layer fully and reaches the photoemissive technology of multiband.(3) the nitride-based semiconductor quantum structure for preparing among the present invention with multiple radiation recombination level structure, the light emission characteristic comprises wide range and multiband, emission spectrum far is wider than the emission spectrum width of common light emitting semiconductor device.To 40 nanometers, only cover a certain monochromatic areas as common device luminous spectrum halfwidth 20 nanometers.And the quantum structure luminescent spectrum halfwidth among the present invention surpasses 120 nanometers, luminous spectrum covers the broad range of 360 nanometers to 900 nanometers, not only comprise each wave band of visible light, and comprise the near infrared band of 360 nanometers to the near ultraviolet of 400 nanometers and 700 nanometers to 900 nanometers.
Beneficial effect of the present invention: in the present invention, design also grows novel III-nitride heterostructure, and having the luminous power of multiple radiation recombination level structure, the multiple radiation recombination energy level of this structure distributes the charge carrier of injection again, realizes that multiwave wide range is luminous.
Four, description of drawings
Fig. 1 is the schematic diagram of device architecture of the present invention, and wherein the nitride multi-quantum pit structure has the radiation recombination characteristic of multiple energy level.Among the figure: 1 is the top layer nitride: as p-GaN, 2 is the multilayer active area: as the InGsN quantum well, 3 is the bottom nitride: as n-GaN, 4 is excessive layer: as low temperature GaN, 5 is backing material: as sapphire.
Fig. 2 is for adopting the active area band structure and the wide spectral emissions schematic diagram of device architecture of the present invention.As can be seen from the figure, each component of the nitride-based semiconductor in the quantum well structure is consistent, and does not have tangible different component to distribute.Recombination process and principle are with one of them trap example: adopt structure of the present invention, each wavelength light-emitting zone does not have apart, i.e. any zone of luminescent active region can be launched the light (hv of each wavelength simultaneously
1, hv
2, hv
3).And multipotency of having reported and ray structure, the light of different-waveband is from the zones of different of luminescent active region.
Fig. 3 is for adopting the photoluminescence spectrum example of device architecture of the present invention.As we can see from the figure, the spectrum of wide range luminescent device structure of the present invention has covered the broad range of 400 nanometers to 850 nanometers, not only comprises each wave band of visible light, and comprises the near infrared band of 700 nanometers to 850 nanometers.
Fig. 4 injects the luminous spectrum example for the electricity that adopts device of the present invention.As we can see from the figure, the spectrum of wide range luminescent device structure of the present invention has covered the broad range of 360 nanometers to 900 nanometers, not only comprise each wave band of visible light, and comprise the near infrared band of 360 nanometers to the near ultraviolet of 400 nanometers and 700 nanometers to 900 nanometers.
Five, embodiment
Embodiment illustrates implementation of the present invention, but realization of the present invention is not limited only to the mode of described example.In Fig. 1 device architecture of the present invention: 1 top layer nitride: as p-GaN, 2 multilayer active areas: as InGsN quantum well, 3 bottom nitride: as the excessive layer of n-GaN, 4: as low temperature GaN, 5 backing materials: as sapphire.
The present invention utilizes MOCVD (metal organic-matter chemical vapor phase epitaxy) epitaxial growth system, adopt synthetic method with nitride-based semiconductor multi-quantum pit structure of multiple level complex function, obtaining with the nitride-based semiconductor is the multiple level wide range light emission of stock.Specifically comprise following a few step:
1, the surface clean and the processing of sapphire (0001) substrate.Use trichloroethylene respectively, acetone, ethanol cleans sapphire (0001) substrate, uses H
2SO
4: HNO
3(1: 1) boils it, uses H under 160-200 ℃
3PO
4: H
2SO
4(1: 3) is to its 5-30 minute (for example 8 minutes) of corrosion.Then, rinse well, and do the surface with the infrared lamp baking with deionized water.
2, sapphire (0001) substrate is put into heat treatment and the nitrogenize behind the growth room.To put into the growth room through the substrate slice that clean is crossed, in 900-1100 ℃ of nitrogen atmosphere, handle 1-30 minute earlier, in ammonia atmosphere, substrate be carried out nitrogen treatment 1-30 minute again.Adopt in 1000 ℃ of nitrogen atmosphere among the embodiment and handled 5 minutes.(agreement)
3, the growth of the GaN of basic unit on sapphire (0001) substrate.At first at the excessive layer (being 30 nanometers among the embodiment) of the GaN of 520 ℃ of growth one deck 5-50 nanometer thickness, through to this excessively layer heat-treat with nitrogenize after, 2 microns GaN to 8 micron thickness of growth one deck wherein can feed silane (SiH
4) carry out the n type and mix.
4, the growth of the nitride Multiple Quantum Well on the GaN of basic unit.Reduce growth room's temperature to 750 ℃, growth has the nitride Multiple Quantum Well of multiple level structure, in growth course, changes the reactant ratio of growing surface in the active layer growth, as changing the ratio of hydrogen, nitrogen, ammonia or source metal.The variation of this growing environment makes the crystalline state of corresponding active layer change to some extent, causes the change of electronic energy level structure in this layer, and final formation has the multiple radiation recombination level structure of composite attribute simultaneously.
The growth of nitride semiconductor light-emitting layer quantum well structure, epitaxial growth In respectively
0.4Ga
0.6N trap layer and In
0.02Ga
0.98N builds layer, and when increasing hydrogen flowing quantity to the trap layer when layer is built in growth 8 times, 1/8 when reducing nitrogen flow to the trap layer simultaneously.Double-deck growth in trap in the quantum well structure/base can repeat 3 cycles, contains multiple luminescence center; Each component is that the space is uniform in layer separately, and the growth thickness of quantum well structure is: trap bed thickness 3 nanometers, build bed thickness 6 nanometers.
5, the growth of cover layer and p type layer.After Multiple Quantum Well growth finishes, rising growth room temperature to 1050 ℃; The GaN cover layer of growth Multiple Quantum Well, thick about 20-2000nm is as 200nm.Cover layer can feed p type dopant (Cp for example
2Mg) be used for obtaining in the future p type nitride semi-conductor material.Last device architecture obtains the effect among Fig. 4 of the present invention when electricity injects.
Claims (7)
1. the light emitting semiconductor device structure that has the wide range emission function, it is characterized in that comprising that following structure constitutes: backing material, backing material comprise sapphire, carborundum or silicon; The bottom nitride: comprise the transition zone that is grown directly upon on the substrate and on n-GaN, described transition bed thickness 10-50 nanometer, n-GaN bed thickness 2-8 micron; The multi layer quantum well active area: the nitride quantum structure luminescent layer with wide range emission function is a quantum well structure, by In
xGa
1-xN trap layer and In
yGa
1-yN builds layer and constitutes, 1＞x＞y 〉=0 wherein, and x in the described quantum well structure and y are that the space is uniform in layer separately; The trap bed thickness 2-10 nanometer of described quantum well structure is built bed thickness 4-20 nanometer; The trap of described quantum well structure/base is double-deck repeats 1-10 cycle; Top layer nitride p-GaN, the thick 0.02-2 micron of described top layer nitride; The nitride-based semiconductor quantum well structure contains multiple luminescence center, and multiple luminescence center can send the continuous spectrum that comprises the 360-900 nanometer range.
2. the light emitting semiconductor device structure with wide range emission function according to claim 1 is characterized in that the light emitting semiconductor device structure constitutes semiconductor light-emitting-diode.
3. the preparation method who has the light emitting semiconductor device of wide range emission function is characterized in that may further comprise the steps: nitride semi-conductor material all utilizes the epitaxial growth of metal organic-matter chemical vapor phase epitaxy (MOCVD) epitaxial growth system to obtain;
1) backing material that provides a nitride semiconductor epitaxial to grow;
2) the bottom nitride material of epitaxial growth nitride semiconductor photogenerator structure; The epitaxial growth of bottom nitride material comprises: at low temperature 500-700 ℃ of following growing nitride semiconductor transition zone with at high temperature 900-1100 ℃ of following growing nitride semiconductor;
3) epitaxial growth has the nitride-based semiconductor quantum structure luminescent layer of wide range emission function; The growth of nitride semiconductor light-emitting layer quantum well structure, epitaxial growth In respectively
xGa
1-xN trap layer and In
yGa
1-yN builds layer, and contains multiple luminescence center, wherein 1＞x＞y 〉=0; Double-deck growth in trap in the quantum well structure/base repeats 1-10 cycle; In the described quantum well structure, component x and y are evenly growths of space in layer separately, and the growth thickness of quantum well structure is: trap bed thickness 2-10 nanometer, build bed thickness 4-20 nanometer; The growth of described quantum well structure is the ratio reactant ratio by hydrogen, nitrogen, ammonia and the source metal that changes growing surface, wherein the ratio of hydrogen and nitrogen per minute normal flow is between 0.1 to 10, the ratio of hydrogen and ammonia per minute normal flow is between 0.1 to 10, and the ratio of ammonia and source metal molal quantity flow is between 1500 to 20000; Produce multiple luminescence center and can send the continuous spectrum that comprises the 360-900 nanometer range;
4) the top layer nitride material of epitaxial growth nitride semiconductor photogenerator structure; The growth of top layer nitride material is high temperature 900-1100 ℃ of growth down, uses p type dopant simultaneously.
4. the preparation method with light emitting semiconductor device of wide range emission function according to claim 3 is characterized in that x, y scope are 0.5＞x＞y 〉=0.
5. the preparation method with light emitting semiconductor device of wide range emission function according to claim 3 is characterized in that at the high temperature 900-1100 ℃ of semi-conductive silane (SiH that uses simultaneously of following growing nitride
4) mix.
6. the preparation method with light emitting semiconductor device of wide range emission function according to claim 3 is characterized in that nitride semiconductor growing on low temperature buffer layer, and nitride-based semiconductor is used silane (SiH simultaneously high temperature 900-1100 ℃ of growth down
4) mix, the scope of doping is 5x10
16/ cm
3To 5x10
19/ cm
3
7. the preparation method with light emitting semiconductor device of wide range emission function according to claim 3, it is characterized in that earlier in the ammonia atmosphere sapphire (0001) substrate was carried out nitrogen treatment 1-30 minute the growth of the GaN of basic unit on sapphire (0001) substrate again; At first at the transition zone of 520 ℃ of growth one deck 5-50 nanometer thickness, through this transition zone is heat-treated with nitrogenize after, 2 microns GaN to 8 micron thickness of growth one deck wherein feed silane (SiH
4) carry out the n type and mix; The growth of the nitride Multiple Quantum Well on the GaN of basic unit: reduce growth room's temperature to 700-950 ℃, growth has the nitride Multiple Quantum Well of multiple level structure, in growth course, in the active layer growth, change the reactant ratio of growing surface, wherein the ratio of hydrogen and nitrogen per minute normal flow is between 0.1 to 10, the ratio of hydrogen and ammonia per minute normal flow is between 0.1 to 10, the ratio of ammonia and source metal molal quantity flow is between 1500 to 20000, the growth of cover layer and p type layer: after the Multiple Quantum Well growth finishes, rising growth room temperature is to 900-1100 ℃, the GaN cover layer of growth Multiple Quantum Well, thick 20-2000nm wherein feeds p type dopant Cp
2Mg is used for obtaining in the future p type nitride semi-conductor material.
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| CN109004070B (en) * | 2018-05-31 | 2020-04-21 | 武汉理工大学 | Multicolor LED array epitaxial process method and device |
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