CN109004070B - Multicolor LED array epitaxial process method and device - Google Patents
Multicolor LED array epitaxial process method and device Download PDFInfo
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- CN109004070B CN109004070B CN201810548246.0A CN201810548246A CN109004070B CN 109004070 B CN109004070 B CN 109004070B CN 201810548246 A CN201810548246 A CN 201810548246A CN 109004070 B CN109004070 B CN 109004070B
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- 238000000407 epitaxy Methods 0.000 claims abstract description 16
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- 239000000523 sample Substances 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
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- 239000000463 material Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000009471 action Effects 0.000 claims description 6
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 4
- 230000033001 locomotion Effects 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 2
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- 229910052738 indium Inorganic materials 0.000 description 2
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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Abstract
The invention discloses a multicolor LED array epitaxial process method and a device, wherein the device comprises a reaction cavity used for the epitaxial growth of a multicolor LED array and a plurality of femtosecond laser sources, a slide tray is arranged in the reaction cavity, an epitaxial substrate used for LED preparation is placed on the slide tray, an optical channel window is arranged on the reaction cavity, a scanning sliding device is arranged on the optical channel window, and a femtosecond laser probe arranged on the scanning sliding device irradiates the epitaxial substrate through the optical channel window. The multicolor LED array epitaxy process method and the device are used for solving the defects of the fluorescent powder-based white light LED in the aspects of color rendering, working frequency, color temperature real-time change and the like, and the problems of high cost and low reliability caused by splicing three primary color LEDs. High efficiency and low cost fabrication of multi-color LEDs is achieved.
Description
Technical Field
The invention belongs to the technical field of semiconductor materials, and particularly relates to a multicolor LED array epitaxial process method and a multicolor LED array epitaxial device.
Background
In recent years, LED lighting and display technologies have been rapidly developed. For lighting application, the mainstream technology at present is to combine a GaN-based blue LED and a yellow phosphor to form white light, and the method has a simple process and a low cost, but has the following disadvantages: (1) the color rendering of the white light source is still limited due to the limited spectral range excited by the fluorescent powder; (2) because the fluorescent powder needs a certain time to excite response, a higher modulation frequency signal is limited to be loaded in a light source power supply, so that the light source cannot be applied to a higher-frequency visible light communication system; (3) the single white light source chip cannot realize real-time color temperature adjustment, and is limited in application in special illumination aspects such as agriculture, biology, environment and the like. At present, full-spectrum LED illumination and display are realized by adopting a three-primary-color LED splicing mode, 3-4 LEDs are generally required to be packaged together to serve as a display pixel point, the method is high in cost, strict in requirements on packaging technology and large in pixel point area. In conclusion, the real-time preparation of the multi-color LED array structure in the LED epitaxial stage can greatly reduce the cost of the full-spectrum LED, greatly improve the performance of the full-spectrum LED, and has great significance in the fields of full-spectrum illumination and display, visible light communication and the like.
Disclosure of Invention
The invention aims to solve the technical problems that a multicolor LED array epitaxial process method and a multicolor LED array epitaxial process device are provided, and the defects of a fluorescent powder-based white light LED in the aspects of color rendering, working frequency, color temperature real-time change and the like are overcome, and the problems of high cost and low reliability caused by splicing of three primary color LEDs are solved. High efficiency and low cost fabrication of multi-color LEDs is achieved.
The technical scheme adopted by the invention for solving the technical problems is as follows: firstly, providing a multicolor LED array epitaxial process method, which comprises the following steps of firstly, carrying out GaN buffer layer and n-type GaN epitaxial growth on an epitaxial substrate;
carrying out InGaN quantum well epitaxial growth, and scanning and irradiating the surface of the InGaN layer of the epitaxial substrate in real time by using single-beam or multi-beam femtosecond laser during growth;
step three, carrying out p-type GaN epitaxial growth;
and step four, after the growth is finished, manufacturing and packaging the LED chip according to the pattern type formed by scanning and irradiating the epitaxial substrate by the femtosecond laser in the step two.
According to the technical scheme, in the second step, the femtosecond laser realizes the effect on the growth surface of the InGaN quantum well in a single-point, multi-point or line-surface scanning mode.
According to the technical scheme, in the second step, when the selected laser beam is a single beam of femtosecond laser, in the process that the femtosecond laser scans and irradiates the growth surface of the epitaxial substrate, the femtosecond laser wavelength is selected according to the scanning speed and the action efficiency of the femtosecond laser with different wavelengths on the epitaxial substrate, the output power of the femtosecond laser is adjusted by controlling the injection current of the femtosecond laser, and the duty ratio of the output of the femtosecond laser is adjusted by setting different duty ratios for the injection current of the femtosecond laser. The parameters of the femtosecond laser are adjusted according to the scanning speed and the action efficiency of the femtosecond laser with different wavelengths on the epitaxial substrate, particularly, as the wavelength of the femtosecond laser is increased, the laser energy threshold which acts on the epitaxial layer is also increased, so that the proper femtosecond laser wavelength can be selected, and the output power of the femtosecond laser can be adjusted by controlling the injection current of the femtosecond laser.
According to the technical scheme, in the second step, when the selected laser beams are multiple femtosecond laser beams, the number of the femtosecond laser beams corresponds to the number of main light-emitting wavelengths of each light-emitting unit of the prepared multicolor LED, and simultaneously, the wavelength, the duty ratio or the power of each femtosecond laser beam is set according to the light-emitting wavelength of the multicolor LED light-emitting unit.
According to the technical scheme, in the first step, the second step and the third step, the epitaxial growth of the semiconductor material is realized by using a hydride vapor phase epitaxy method, a metal organic chemical vapor deposition method or a molecular beam epitaxy method, femtosecond laser enters the reaction cavity through a preset optical channel of semiconductor epitaxy equipment and irradiates the surface of the epitaxy substrate, and the number of the optical channels can be 1 or more according to the equipment structure and the process requirements.
The invention also provides a multicolor LED array epitaxial process device which comprises a reaction cavity for multicolor LED array epitaxial growth and a plurality of femtosecond laser sources, wherein a slide tray is arranged in the reaction cavity, an epitaxial substrate for LED preparation is placed on the slide tray, an optical channel window is arranged on the reaction cavity, a scanning sliding device is arranged on the optical channel window, and a femtosecond laser probe arranged on the scanning sliding device irradiates the epitaxial substrate through the optical channel window.
According to the technical scheme, the device further comprises a control system used for adjusting the wavelength, the duty ratio or the power of the femtosecond laser and controlling the movement of the scanning sliding device and the circumferential rotation of the slide tray.
The principle of the invention is as follows: the light emitting from infrared to ultraviolet wavelength can be realized by adjusting the chemical composition ratio of the ternary compound InGaN material, and the light emitting wavelength of the light emitting layer can be adjusted by changing the local atomic kinetic energy through external energy to destroy the weak chemical bonds between In and N due to the weak chemical bonds between In and N and the relatively strong chemical bonds between Ga and N. During InGaN quantum well epitaxial growth, scanning irradiation is carried out on the growth surface of an epitaxial wafer by using single-beam or multi-beam femtosecond laser, local atomic kinetic energy is changed by the femtosecond laser, and InGaN quantum well local material components are adjusted, so that quantum well arrays with different InGaN components are realized on the same epitaxial wafer, the wavelength, duty ratio or power of the femtosecond laser is adjusted according to the scanning rate and the prepared multi-color LED light-emitting wavelength, and a red-green-blue three-color or even multi-color LED array structure is realized. The growth of the multi-color LED is realized through femtosecond laser, and the method has great significance for full-spectrum illumination and display.
The invention has the following beneficial effects: the invention relates to a multicolor LED array epitaxial process method and a device, which are used for solving the defects of a fluorescent powder-based white LED in the aspects of color rendering, working frequency, color temperature real-time change and the like and the problems of high cost and low reliability caused by splicing tricolor LEDs. High efficiency and low cost fabrication of multi-color LEDs is achieved.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a flow chart of a multi-color LED array epitaxy process in an embodiment of the invention;
FIG. 2 is a schematic diagram of a multi-color LED array epitaxy processing apparatus according to an embodiment of the invention;
FIG. 3 is a top view of a device in an example of the invention;
wherein: 101-femtosecond laser probe, 102-scanning sliding device, 103-optical channel window, 104-epitaxial substrate, 105-tail gas outlet, 106-reaction source inlet, 107-reaction cavity inner space, 108-slide tray, 109-rotating and supporting structure, 110-femtosecond laser source, 111-computer control system, 112-programmable motor, 113-optical fiber.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The embodiment of the invention provides a multicolor LED array epitaxial process method, as shown In figure 1, a GaN buffer layer and n-type GaN epitaxial growth are carried out on an epitaxial substrate, then InGaN quantum well epitaxial growth is carried out, during the InGaN quantum well epitaxial growth, single beam or multiple beams of femtosecond laser are used for scanning and irradiating the growth surface of the epitaxial substrate, the local atomic kinetic energy is changed through the femtosecond laser, and the local In material components of the InGaN quantum well are adjusted, so that quantum well arrays with different InGaN components are realized on the same epitaxial substrate, the wavelength, the duty ratio or the power of the femtosecond laser is adjusted according to the scanning rate, the action efficiency of the femtosecond laser with different wavelengths on the epitaxial substrate and the prepared multicolor LED light-emitting wavelength, and the three-color RGB or even multicolor LED array structure is realized.
Further, in the second step, the femtosecond laser realizes the effect on the growth surface of the InGaN quantum well in a single-point, multi-point or line-surface scanning mode.
Further, in the second step, when the selected laser beam is a single femtosecond laser, in the process of scanning and irradiating the growth surface of the epitaxial substrate by the femtosecond laser, a proper femtosecond laser wavelength is selected according to the scanning rate and the action efficiency of the femtosecond laser with different wavelengths on the epitaxial substrate, the output power of the femtosecond laser is adjusted by controlling the injection current of the femtosecond laser, and the duty ratio of the output of the femtosecond laser is adjusted by setting different duty ratios for the injection current of the femtosecond laser.
Further, in the second step, when the selected laser beam is a plurality of femtosecond laser beams, the number of the femtosecond laser beams corresponds to the number of main light-emitting wavelengths of each light-emitting unit of the prepared multi-color LED, and at the same time, the wavelength, duty ratio or power of each femtosecond laser beam is set according to the light-emitting wavelength of the multi-color LED light-emitting unit.
Further, in the first step, the second step and the third step, the epitaxial growth of the semiconductor material is realized by using a hydride vapor phase epitaxy method (HVPE), a metal organic chemical vapor deposition Method (MOCVD) or a molecular beam epitaxy Method (MBE), the femtosecond laser enters the reaction cavity through a light channel preset by the semiconductor epitaxial device and irradiates the surface of the epitaxial substrate, and the number of the light channels can be 1 or more according to the device structure and the process requirements.
As shown in fig. 2 and 3, the embodiment of the invention provides a multicolor LED array epitaxial process device, the device can be used for realizing the method, and comprises a reaction cavity 107 for InGaN-based LED epitaxial growth, a plurality of femtosecond laser probes 101, a slide tray 108 is arranged in the reaction cavity 107, the slide tray 108 is supported in the reaction cavity 107 through a rotating and supporting structure 109, the epitaxial substrate 104 is placed on the slide tray 108, the top of the reaction chamber 107 is provided with a reaction source inlet 106, the bottom of the reaction chamber 107 is provided with a tail gas outlet 105, the femtosecond laser probe 101 is installed on the scanning sliding device 102, in the InGaN quantum well epitaxial growth process, femtosecond laser enters the reaction cavity 107 through the optical channel window 103, and irradiates the epitaxial substrate 104, scanning irradiation of the epitaxial wafer growth surface is achieved by axial movement of the scanning slide 102 and circumferential rotation of the slide tray 108.
Further, a computer control system 111 is included to adjust the wavelength, duty cycle, or power of the femtosecond laser source 110, as well as to control the motion of the scanning slide 102 and to control the programmable motor 112 to effect adjustment of the circumferential rotation of the slide tray 108.
It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.
Claims (7)
1. A multicolor LED array epitaxial process method is characterized by comprising the following steps of firstly, carrying out GaN buffer layer and n-type GaN epitaxial growth on an epitaxial substrate;
carrying out InGaN quantum well epitaxial growth, and scanning and irradiating the surface of the InGaN layer of the epitaxial substrate in real time by using single-beam or multi-beam femtosecond laser during growth;
step three, carrying out p-type GaN epitaxial growth;
and step four, after the growth is finished, manufacturing and packaging the LED chip according to the pattern type formed by scanning and irradiating the epitaxial substrate by the femtosecond laser in the step two.
2. The multi-color LED array epitaxy process method of claim 1, wherein in the second step, the femtosecond laser realizes the action on the growth surface of the InGaN quantum well by means of single-point, multi-point or line-plane scanning.
3. The multi-color LED array epitaxy process method of claim 2, wherein in the second step, when the selected laser beam is a single femtosecond laser, in the process of scanning and irradiating the growth surface of the epitaxial substrate by the femtosecond laser, the femtosecond laser wavelength is selected according to the scanning rate and the action efficiency of the femtosecond laser with different wavelengths on the epitaxial substrate, the output power of the femtosecond laser is adjusted by controlling the injection current of the femtosecond laser, and the duty ratio of the femtosecond laser output is adjusted by setting different duty ratios to the injection current of the femtosecond laser.
4. The multi-color LED array epitaxy process method according to claim 2, wherein in the second step, when the selected laser beam is a plurality of femtosecond laser beams, the number of the femtosecond laser beams corresponds to the number of the main emission wavelengths of each light emitting unit of the manufactured multi-color LED, and the wavelength, duty ratio or power of each femtosecond laser beam is set according to the emission wavelengths of the multi-color LED light emitting units.
5. The multi-color LED array epitaxy process method according to claim 1 or 2, wherein in the first step, the second step and the third step, the semiconductor material epitaxy growth is realized by using a hydride vapor phase epitaxy method, a metal organic chemical vapor deposition method or a molecular beam epitaxy method, the femtosecond laser enters the reaction cavity through a preset optical channel of the semiconductor epitaxy device and irradiates the surface of the epitaxy substrate, and the number of the optical channels can be 1 or more according to the device structure and process requirements.
6. A multicolor LED array epitaxy process device for the multicolor LED array epitaxy process method according to claim 1, which comprises a reaction cavity for multicolor LED array epitaxy growth and a plurality of femtosecond laser sources, wherein a slide tray is arranged in the reaction cavity, an epitaxial substrate for LED preparation is placed on the slide tray, an optical channel window is arranged on the reaction cavity, a scanning sliding device is arranged on the optical channel window, and a femtosecond laser probe arranged on the scanning sliding device irradiates the epitaxial substrate through the optical channel window.
7. The multicolor LED array epitaxy process apparatus according to claim 6, further comprising a control system for adjusting the wavelength, duty cycle or power of the femtosecond laser and controlling the movement of the scanning slide and the circumferential rotation of the slide tray.
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