CN101213318B - 用于生长单晶金属的方法和装置 - Google Patents

用于生长单晶金属的方法和装置 Download PDF

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Publication number
CN101213318B
CN101213318B CN2006800243420A CN200680024342A CN101213318B CN 101213318 B CN101213318 B CN 101213318B CN 2006800243420 A CN2006800243420 A CN 2006800243420A CN 200680024342 A CN200680024342 A CN 200680024342A CN 101213318 B CN101213318 B CN 101213318B
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China
Prior art keywords
metal sample
heating
polycrystalline
polycrystalline metal
crystal
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Expired - Fee Related
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CN2006800243420A
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English (en)
Chinese (zh)
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CN101213318A (zh
Inventor
J·R·丘利克
E·M·塔尔夫
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University of Texas System
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Individual
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/04—Isothermal recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/02—Production of homogeneous polycrystalline material with defined structure directly from the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2006800243420A 2005-05-12 2006-05-03 用于生长单晶金属的方法和装置 Expired - Fee Related CN101213318B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US68027305P 2005-05-12 2005-05-12
US60/680,273 2005-05-12
PCT/US2006/016771 WO2006124266A2 (en) 2005-05-12 2006-05-03 Method and apparatus for growing single-crystal metals

Publications (2)

Publication Number Publication Date
CN101213318A CN101213318A (zh) 2008-07-02
CN101213318B true CN101213318B (zh) 2012-10-17

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CN2006800243420A Expired - Fee Related CN101213318B (zh) 2005-05-12 2006-05-03 用于生长单晶金属的方法和装置

Country Status (6)

Country Link
US (1) US7922812B2 (ja)
EP (1) EP1888802B1 (ja)
JP (1) JP5106387B2 (ja)
KR (1) KR101009314B1 (ja)
CN (1) CN101213318B (ja)
WO (1) WO2006124266A2 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006124266A2 (en) * 2005-05-12 2006-11-23 The Board Of Regents, The University Of Texas System Method and apparatus for growing single-crystal metals
US11072035B2 (en) * 2010-05-21 2021-07-27 Illinois Tool Works Inc. Auxiliary welding heating system
ITTO20130430A1 (it) 2013-05-28 2014-11-29 Illinois Tool Works Dispositivo per il pre-riscaldamento ad induzione e la saldatura testa a testa di lembi adiacenti di almeno un elemento da saldare
US11076454B2 (en) 2014-05-16 2021-07-27 Illinois Tool Works Inc. Induction heating system temperature sensor assembly
US11197350B2 (en) 2014-05-16 2021-12-07 Illinois Tool Works Inc. Induction heating system connection box
US9913320B2 (en) 2014-05-16 2018-03-06 Illinois Tool Works Inc. Induction heating system travel sensor assembly
US11510290B2 (en) 2014-05-16 2022-11-22 Illinois Tool Works Inc. Induction heating system
US10863591B2 (en) 2014-05-16 2020-12-08 Illinois Tool Works Inc. Induction heating stand assembly
US10440784B2 (en) 2014-10-14 2019-10-08 Illinois Tool Works Inc. Reduced-distortion hybrid induction heating/welding assembly
US10638554B2 (en) 2014-12-23 2020-04-28 Illinois Tool Works Inc. Systems and methods for interchangeable induction heating systems
KR101878465B1 (ko) * 2016-07-12 2018-07-13 기초과학연구원 단결정 금속포일, 및 이의 제조방법
WO2018012864A1 (ko) * 2016-07-12 2018-01-18 기초과학연구원 단결정 금속포일, 및 이의 제조방법
KR102396215B1 (ko) * 2017-11-28 2022-05-10 기초과학연구원 단결정 금속포일 및 이의 제조방법
CN108950684B (zh) * 2018-06-08 2022-02-11 中国科学院物理研究所 一种制备单晶金属箔的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507616A (en) * 1967-08-14 1970-04-21 Westinghouse Electric Corp Preparation of large crystal refractory metal monocarbides
US5205872A (en) * 1988-12-10 1993-04-27 Kawasaki Steel Corporation Method of producing crystal bodies having controlled crystalline orientation
US6110274A (en) * 1997-07-02 2000-08-29 Sharp Kabushiki Kaisha Process and apparatus for producing polycrystalline semiconductor
US20050121117A1 (en) * 2001-11-05 2005-06-09 Hufnagel Todd C. Alloy and method of producing the same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3435668A (en) * 1966-08-26 1969-04-01 Us Interior Method of determining preferred orientation in metals
DE2749836C3 (de) * 1977-11-08 1980-07-03 Dornier System Gmbh, 7990 Friedrichshafen Zerstörungsfreie Prüfung der Ermüdung von Bauteilen
US4487651A (en) * 1983-04-06 1984-12-11 Duracell Inc. Method for making irregular shaped single crystal particles and the use thereof in anodes for electrochemical cells
US5654246A (en) * 1985-02-04 1997-08-05 Lanxide Technology Company, Lp Methods of making composite ceramic articles having embedded filler
US5340655A (en) * 1986-05-08 1994-08-23 Lanxide Technology Company, Lp Method of making shaped ceramic composites with the use of a barrier and articles produced thereby
US5221558A (en) * 1990-01-12 1993-06-22 Lanxide Technology Company, Lp Method of making ceramic composite bodies
US20040047758A1 (en) * 2000-01-05 2004-03-11 Northwestern University Method for enhancement of grain boundary cohesion in crystalline materials and compositions of matter therefor
EP1391942A4 (en) * 2001-05-31 2007-08-15 Nat Inst Of Advanced Ind Scien TUNNEL MAGNETIC RESISTANCE ELEMENT
RU2213149C2 (ru) * 2001-10-25 2003-09-27 Марков Геннадий Александрович Способ изготовления монокристаллической металлической проволоки
US6875661B2 (en) * 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
CN100490205C (zh) * 2003-07-10 2009-05-20 国际商业机器公司 淀积金属硫族化物膜的方法和制备场效应晶体管的方法
WO2006124266A2 (en) * 2005-05-12 2006-11-23 The Board Of Regents, The University Of Texas System Method and apparatus for growing single-crystal metals
US20090011925A1 (en) * 2007-07-06 2009-01-08 Larry Gordon Felix Method for producing catalytically active glass-ceramic materials, and glass-ceramics produced thereby
GB0813112D0 (en) * 2008-07-18 2008-08-27 Rolls Royce Plc Metal casting

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507616A (en) * 1967-08-14 1970-04-21 Westinghouse Electric Corp Preparation of large crystal refractory metal monocarbides
US5205872A (en) * 1988-12-10 1993-04-27 Kawasaki Steel Corporation Method of producing crystal bodies having controlled crystalline orientation
US6110274A (en) * 1997-07-02 2000-08-29 Sharp Kabushiki Kaisha Process and apparatus for producing polycrystalline semiconductor
US20050121117A1 (en) * 2001-11-05 2005-06-09 Hufnagel Todd C. Alloy and method of producing the same

Also Published As

Publication number Publication date
JP2008540319A (ja) 2008-11-20
CN101213318A (zh) 2008-07-02
EP1888802A2 (en) 2008-02-20
WO2006124266A3 (en) 2007-02-08
KR20080019224A (ko) 2008-03-03
JP5106387B2 (ja) 2012-12-26
US7922812B2 (en) 2011-04-12
EP1888802B1 (en) 2013-12-18
EP1888802A4 (en) 2009-07-01
US20090120351A1 (en) 2009-05-14
WO2006124266A2 (en) 2006-11-23
KR101009314B1 (ko) 2011-01-18

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