CN101211817A - Method for diminishing shallow slot isolation margin depression - Google Patents
Method for diminishing shallow slot isolation margin depression Download PDFInfo
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- CN101211817A CN101211817A CNA2007101729288A CN200710172928A CN101211817A CN 101211817 A CN101211817 A CN 101211817A CN A2007101729288 A CNA2007101729288 A CN A2007101729288A CN 200710172928 A CN200710172928 A CN 200710172928A CN 101211817 A CN101211817 A CN 101211817A
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Abstract
The invention discloses a method for reducing a shallow groove isolation edge depression in which an oxidation flank wall is used for reducing the edge field oxide depression. The method comprises the following steps: depositing an oxidation on a substrate where a hard masking layer is removed as well as on the upper surface and the lateral surface of a shallow groove field oxide; removing the oxidation layer on the substrate and on the upper surface of the field oxide and maintaining the oxidation layer of the lateral surface of the field oxide to generate a lateral wall of the oxidation layer on the lateral surface; carrying out the follow-up etching after entering. Compared with the traditional process, the invention adopts the flank wall of the oxidation layer to resist the rusty to the shallow groove isolation edge in the follow-up etching thus effectively reducing the etching quantity of the field oxide to the shallow groove isolation edge and preventing the increase of the leakage current and the residue of the multi-crystal etching.
Description
Technical field
The present invention relates to a kind of integrated circuit technology method, particularly relate to a kind of process that reduces the shallow-trench isolation marginal trough.
Background technology
In deep submicron integrated circuit technology, shallow-trench isolation (STI, shallow trench isolation) technology is owing to have the isolation size that can provide less, advantages such as the surface of planarization, and replaced the technology of local field oxidation gradually, become the isolation technology of main flow.
But in traditional shallow grooved-isolation technique,, can form the depression of an oxygen at the shallow-trench isolation edge owing to the effect of wet etching, as shown in Figure 1, the schematic diagram that it caves in for the shallow slot fringing field oxygen that forms in traditional shallow grooved-isolation technique.The depression of this local field oxygen can cause the electric field at active area edge to strengthen, and makes the threshold voltage at shallow slot edge reduce, and leakage current increases, and more serious depression even can cause the residual of polycrystal etching forms short circuit.
For this reason, how to reduce the marginal trough in the shallow grooved-isolation technique, become a big problem of industry.
Summary of the invention
The object of the present invention is to provide a kind of method that reduces the shallow-trench isolation marginal trough, to reduce the be corroded amount of etching process midfield oxygen at the shallow-trench isolation edge.
Another object of the present invention is to provide a kind of formation shallow slot isolation method, to reduce the be corroded amount of shallow grooved-isolation technique midfield oxygen at the shallow-trench isolation edge.
For this reason, the invention provides a kind of method that reduces the shallow-trench isolation marginal trough, may further comprise the steps: deposit one oxide layer has been removed the substrate of curtain layer of hard hood and the upper surface and the side surface of a shallow slot field oxygen in one; Remove the oxide layer of an above-mentioned substrate and an oxygen upper surface, keep the oxide layer of this oxygen side surface, and oxygen side surface on the scene forms an oxide layer abutment wall; Enter subsequent etch.
Further, above-mentioned oxide layer is to form with identical method deposit with an oxygen, so that an oxygen has identical corrosion rate with the oxide layer abutment wall in subsequent etch.
Further, above-mentioned oxide layer is that method deposit with high-density plasma chemical vapour-phase deposition forms.
Further, in the oxide layer of removing an above-mentioned substrate and an oxygen upper surface, the oxide layer that keeps this oxygen side surface, and oxygen side surface on the scene forms in the process of an oxide layer abutment wall, adopt anisotropic oxide layer to anti-carve, remove the oxide layer of an above-mentioned substrate and an oxygen upper surface, and form the oxide layer abutment wall.
Further, the thickness of above-mentioned oxide layer abutment wall is determined by the subsequent etch amount.
Further, the thickness of above-mentioned oxide layer abutment wall is that 200A is to 1000A.
The present invention provides a kind of formation shallow slot isolation method in addition, may further comprise the steps: deposit one curtain layer of hard hood is in a substrate; Etch away part curtain layer of hard hood and corresponding part substrate, and form a shallow slot in substrate; Deposit one first oxide layer and an insulating barrier are in this shallow slot; Remove this insulating barrier of part and first oxide layer, and in shallow slot, form an oxygen; Remove suprabasil curtain layer of hard hood; Deposit one second oxide layer has been removed the substrate of curtain layer of hard hood and the upper surface and the side surface of this oxygen in this; Remove second oxide layer of an above-mentioned substrate and an oxygen upper surface, keep second oxide layer of this oxygen side surface, and oxygen side surface on the scene forms an oxide layer abutment wall; Enter subsequent etch, form shallow-trench isolation.
Further, above-mentioned second oxide layer is to form with identical method deposit with an oxygen, so that an oxygen has identical corrosion rate with the oxide layer abutment wall in subsequent etch.
Further, above-mentioned second oxide layer is that method deposit with high-density plasma chemical vapour-phase deposition forms.
Further, in second oxide layer of removing an above-mentioned substrate and an oxygen upper surface, second oxide layer that keeps this oxygen side surface, and oxygen side surface on the scene forms in the process of an oxide layer abutment wall, adopt anisotropic oxide layer to anti-carve, remove second oxide layer of an above-mentioned substrate and an oxygen upper surface, and form the oxide layer abutment wall.
Further, the thickness of above-mentioned oxide layer abutment wall is determined by the subsequent etch amount.
Further, the thickness of above-mentioned oxide layer abutment wall is that 200A is to 1000A.
In sum, the present invention utilizes the oxide layer abutment wall to stop in the subsequent etch the corrosion at shallow-trench isolation edge, has effectively reduced the be corroded amount of an oxygen at the shallow-trench isolation edge, has prevented the residual of the increase of leakage current and polycrystal etching.
Description of drawings
The schematic diagram that Fig. 1 caves in for the shallow slot fringing field oxygen that forms in traditional shallow grooved-isolation technique;
Fig. 2 to Fig. 6 is the process schematic diagram of traditional shallow slot technology;
Fig. 7 to Fig. 9 utilizes the oxide layer abutment wall for one embodiment of the invention and reduces the technical process schematic diagram of shallow slot fringing field oxygen depression.
Embodiment
For purpose of the present invention, feature are become apparent, the specific embodiment of the present invention is further described below in conjunction with accompanying drawing.
Please refer to Fig. 2 to Fig. 6, it is the process schematic diagram of traditional shallow slot technology.At first, deposit curtain layer of hard hood 12 then etches away part curtain layer of hard hood 12 and corresponding part substrate 10 in substrate 10 (as shown in Figure 2), to form shallow slot 14 (as shown in Figure 3) in substrate 10.Wherein, the material of curtain layer of hard hood 12 for example is a silicon nitride, also can have one deck silica usually between curtain layer of hard hood 12 and substrate 10, and substrate for example is a silicon substrate, and the formation of shallow slot 14 for example is to form with dry etching.Then, deposit first oxide layer 16 and insulating barrier 18 (as shown in Figure 4) in shallow slot 14; The partial insulative layer 18 and first oxide layer 16 are removed, removed the curtain layer of hard hood 12 in the substrate 10 then, and in shallow slot, form an oxygen 20 (as shown in Figure 5).Wherein, above-mentioned insulating barrier 18 for example is to utilize the method deposit of high-density plasma chemical vapour-phase deposition to form.In traditional handicraft, will carry out subsequent etch, wet etching for example, and form shallow-trench isolation; But because the effect of wet etching will form an oxygen marginal trough (as shown in Figure 6) at the shallow-trench isolation edge.
Be to reduce an oxygen marginal trough, one embodiment of the invention forms the method for abutment wall by anti-carving of anisotropic oxide layer, reduces the depression of shallow slot fringing field oxygen.Please refer to Fig. 7 to Fig. 9, it utilizes the oxide layer abutment wall for one embodiment of the invention and reduces the technical process schematic diagram of shallow slot fringing field oxygen depression.
After the curtain layer of hard hood 12 of removing substrate 10, and enter before the subsequent etch, in deposit second oxide layer 22 (as shown in Figure 7) in the substrate 10 and on the upper surface of oxygen 20 and the side surface, utilize anisotropic oxide layer to anti-carve then, get rid of second oxide layer 22 of a substrate 10 and oxygen 20 upper surface, second oxide layer 22 that keeps these oxygen 20 side surfaces, and oxygen side surface on the scene forms 24 (as shown in Figure 8) of oxide layer abutment wall.Then get back in traditional shallow grooved-isolation technique,, be formed on the plane (as shown in Figure 9) of the field-free oxygen depression in shallow-trench isolation edge through follow-up isotropic wet etching.Wherein, second oxide layer 22 is to adopt the method deposit identical with field oxygen 20 to form, so that an oxygen 20 has identical corrosion rate with oxide layer abutment wall 24 in subsequent etch, for example adopt the method for high-density plasma chemical vapour-phase deposition to come this second oxide layer 22 of deposit.And the thickness of second oxide layer 22 is determined by the subsequent etch amount, generally at 200A between the 1000A.
More than be the formation shallow slot isolation method that one embodiment of the invention proposed, wherein crucial for reducing the method for shallow-trench isolation marginal trough, i.e. following steps:
Deposit one oxide layer 22 is in the upper surface and the side surface (as shown in Figure 7) of substrate 10 of having removed curtain layer of hard hood 12 and shallow slot field oxygen 20;
Remove the oxide layer 22 of an above-mentioned substrate 10 and oxygen 20 upper surface, keep the oxide layer 22 of these oxygen 20 side surfaces, and oxygen on the scene 20 side surfaces form an oxide layer abutment wall 24 (as shown in Figure 8);
Enter subsequent etch, and the plane (as shown in Figure 9) that field-free oxygen caves at the shallow-trench isolation edge.
, be not that protection scope of the present invention should be as the criterion with the scope that claims are contained in order to qualification the present invention below only for for example.
Claims (12)
1. a method that reduces the shallow-trench isolation marginal trough is characterized in that, comprising:
Deposit one oxide layer has been removed the substrate of curtain layer of hard hood and the upper surface and the side surface of a shallow slot field oxygen in one;
Remove the oxide layer of an above-mentioned substrate and an oxygen upper surface, keep the oxide layer of this oxygen side surface, and oxygen side surface on the scene forms an oxide layer abutment wall;
Enter subsequent etch.
2. the method for minimizing shallow-trench isolation marginal trough according to claim 1 is characterized in that, wherein above-mentioned oxide layer is to form with identical method deposit with an oxygen, so that an oxygen has identical corrosion rate with the oxide layer abutment wall in subsequent etch.
3. the method for minimizing shallow-trench isolation marginal trough according to claim 1 is characterized in that, wherein above-mentioned oxide layer is that the method deposit with high-density plasma chemical vapour-phase deposition forms.
4. the method for minimizing shallow-trench isolation marginal trough according to claim 1, it is characterized in that, wherein in the oxide layer of removing an above-mentioned substrate and an oxygen upper surface, the oxide layer that keeps this oxygen side surface, and oxygen side surface on the scene forms in the process of an oxide layer abutment wall, adopt anisotropic oxide layer to anti-carve, remove the oxide layer of an above-mentioned substrate and an oxygen upper surface, and form the oxide layer abutment wall.
5. the method for minimizing shallow-trench isolation marginal trough according to claim 1 is characterized in that the thickness of wherein above-mentioned oxide layer abutment wall is determined by the subsequent etch amount.
6. the method for minimizing shallow-trench isolation marginal trough according to claim 1 is characterized in that, the thickness of wherein above-mentioned oxide layer abutment wall is that 200A is to 1000A.
7. one kind forms shallow slot isolation method, it is characterized in that, comprising:
Deposit one curtain layer of hard hood is in a substrate;
Etch away part curtain layer of hard hood and corresponding part substrate, and form a shallow slot in substrate;
Deposit one first oxide layer and an insulating barrier are in this shallow slot;
Remove this insulating barrier of part and first oxide layer, and in shallow slot, form an oxygen;
Remove suprabasil curtain layer of hard hood;
Deposit one second oxide layer has been removed the substrate of curtain layer of hard hood and the upper surface and the side surface of this oxygen in this;
Remove second oxide layer of an above-mentioned substrate and an oxygen upper surface, keep second oxide layer of this oxygen side surface, and oxygen side surface on the scene forms an oxide layer abutment wall;
Enter subsequent etch, form shallow-trench isolation.
8. formation shallow slot isolation method according to claim 6 is characterized in that, wherein above-mentioned second oxide layer is to form with identical method deposit with an oxygen, so that an oxygen has identical corrosion rate with the oxide layer abutment wall in subsequent etch.
9. formation shallow slot isolation method according to claim 6 is characterized in that, wherein above-mentioned second oxide layer is that the method deposit with high-density plasma chemical vapour-phase deposition forms.
10. formation shallow slot isolation method according to claim 6, it is characterized in that, wherein in second oxide layer of removing an above-mentioned substrate and an oxygen upper surface, second oxide layer that keeps this oxygen side surface, and oxygen side surface on the scene forms in the process of an oxide layer abutment wall, adopt anisotropic oxide layer to anti-carve, remove second oxide layer of an above-mentioned substrate and an oxygen upper surface, and form the oxide layer abutment wall.
11. formation shallow slot isolation method according to claim 6 is characterized in that the thickness of wherein above-mentioned oxide layer abutment wall is determined by the subsequent etch amount.
12. formation shallow slot isolation method according to claim 6 is characterized in that, the thickness of wherein above-mentioned oxide layer abutment wall is that 200A is to 1000A.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2007101729288A CN101211817A (en) | 2007-12-25 | 2007-12-25 | Method for diminishing shallow slot isolation margin depression |
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| CNA2007101729288A CN101211817A (en) | 2007-12-25 | 2007-12-25 | Method for diminishing shallow slot isolation margin depression |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103855072A (en) * | 2012-12-06 | 2014-06-11 | 中国科学院微电子研究所 | Isoplanar field oxidation isolation structure and forming method thereof |
| CN105470289A (en) * | 2014-09-10 | 2016-04-06 | 北大方正集团有限公司 | Semiconductor device manufacturing method and semiconductor device |
-
2007
- 2007-12-25 CN CNA2007101729288A patent/CN101211817A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103855072A (en) * | 2012-12-06 | 2014-06-11 | 中国科学院微电子研究所 | Isoplanar field oxidation isolation structure and forming method thereof |
| CN103855072B (en) * | 2012-12-06 | 2016-08-17 | 中国科学院微电子研究所 | Isoplanar field oxidation isolation structure and forming method thereof |
| CN105470289A (en) * | 2014-09-10 | 2016-04-06 | 北大方正集团有限公司 | Semiconductor device manufacturing method and semiconductor device |
| CN105470289B (en) * | 2014-09-10 | 2019-01-01 | 北大方正集团有限公司 | The manufacturing method and semiconductor devices of semiconductor devices |
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