CN103855072B - Deng flat field oxidation isolation structure and forming method thereof - Google Patents
Deng flat field oxidation isolation structure and forming method thereof Download PDFInfo
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- CN103855072B CN103855072B CN201210521736.4A CN201210521736A CN103855072B CN 103855072 B CN103855072 B CN 103855072B CN 201210521736 A CN201210521736 A CN 201210521736A CN 103855072 B CN103855072 B CN 103855072B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Abstract
Flat field oxidation isolation structures such as one and forming method thereof.Described method includes: provide substrate；Substrate is formed silicon oxide layer；Silicon oxide layer is formed the first silicon nitride layer；Pattern, form opening in presumptive area, expose described substrate；Remove the part of described substrate in said opening, to form groove；Inwall at described groove forms silicon nitride spacer；Field oxide is grown in described groove；Make the flush of the surface described substrate outer with described groove of described field oxide；And remove described first silicon nitride layer outside described groove and described silicon oxide layer.The method according to the invention such as can obtain at the flat field oxidation isolation structure；Meanwhile, the inwall at groove is formed with silicon nitride sidewall, is possible to prevent horizontal peroxidating, maintains source region area constant.
Description
Technical field
The present invention relates to sub-micro technical field of semiconductor device, particularly relate to wait flat field
Oxidation isolation structure and forming method thereof.
Background technology
Now, a semiconductor integrated circuit is integrated with thousands of semiconductor device,
In order to avoid influencing each other between device, it usually needs form isolation between device.
Traditional isolation method is that local oxidation isolates (LOCOS).In traditional LOCOS shape
In one-tenth method, first grow one layer of silicon nitride layer in surface of silicon, gone with corrosion by photoetching
Except the silicon nitride layer of place, form opening, expose silicon substrate, then on exposed silicon substrate
Formation field oxide, then remove the silicon nitride layer of surface of silicon, thus formed at silicon chip surface
Active area (device area) and place (area of isolation).But, use the field that the method is formed
Oxide layer has the thickness of more than 50% to exceed surface of silicon, namely field oxide and device region silicon serve as a contrast
Basal surface has huge drop, and this is unfavorable for the employing of the advanced process such as cmp.With high k
After gate medium-metal gate semiconductor device as a example by grid preparation technology, the filling out of metal gate for convenience
Fill, general require that false grid height can not be the highest, and field oxide and device region surface of silicon
Huge drop substantially reduces the process window of chemical mechanical milling tech in planarization process；With
Time, due to the increase of over etching amount, the fluctuation of chemical mechanical milling tech is easy to tie vacation grid
Structure etching is clean, causes the damage of device.Therefore, it is thus achieved that isoplanar field oxidation isolation structure
Particularly important.
In order to obtain isoplanar isolation structure, shallow trench isolation (STI) technique starts to be used.
But shallow ditch groove separation process is higher to equipment requirements, thus add process costs.Therefore,
Develop a kind of planar isolated structure such as effective and with low cost and forming method thereof the heaviest
Want.
Summary of the invention
Brief overview about the disclosure given below, in order to provide about certain of the disclosure
The basic comprehension of a little aspects.Should be appreciated that this general introduction is not the exhaustive about the disclosure
General introduction.It is not intended to determine the key of the disclosure or pith, is not intended limitation
The scope of the present disclosure.Its purpose is only to provide some concept in simplified form, in this, as
The preamble in greater detail discussed after a while.
According to an aspect of the present invention, it is provided that the method for the flat field oxidation isolation such as a kind of formation,
The method includes: provide substrate；Form silicon oxide layer over the substrate；At described silicon oxide
The first silicon nitride layer is formed on layer；Described first silicon nitride layer and described silicon oxide layer are carried out figure
Case, forms opening in presumptive area, exposes described substrate；Remove described in said opening
The part of substrate, to form groove on the surface of described substrate；Form second over the substrate
Silicon nitride layer, etches described second silicon nitride layer, forms silicon nitride with the inwall at described groove
Side wall；Field oxide is grown in described groove；The surface making described field oxide is recessed with described
The flush of the outer described substrate of groove；And remove described first silicon nitride layer outside described groove
With described silicon oxide layer.
Preferably, the part of described substrate is removed in said opening with the surface at described substrate
Form the step of groove, including: use the one in dry etch process or wet corrosion technique
Or the combination of two kinds, remove the part of described substrate to form described groove at described opening.
Preferably, remove the step of the part formation groove of described substrate at described opening, including:
Using thermal oxidation technology to form thermal oxide layer on the substrate of described opening, described thermal oxide layer makes
The Part I of described substrate surface is oxidized；And etch described thermal oxide layer and described lining
The described Part I at the end, to form described groove.
Preferably, described wet corrosion technique includes: using volume percent content is 1% to 15%
Tetramethylammonium hydroxide aqueous solution under the technological temperature of 50 DEG C to 80 DEG C described in erosion removal serve as a contrast
The part at the end, to form described groove.
Preferably, the degree of depth of described groove is approximately 1st to five/2nd of described field oxide thickness
/ tri-.
Preferably, the thickness of described second silicon nitride layer isExtremely
Preferably, the step forming the second silicon nitride layer over the substrate includes: at described lining
Growth regulation silicon dioxide layer, institute over the substrate is formed before described second silicon nitride layer at the end
State the second silicon oxide layer for eliminating answering between described second silicon nitride layer and described substrate surface
Power.
Preferably, described silicon nitride spacer is formed at the top of described groove inner wall.
Preferably, the inwall at described groove two ends is formed with beak type sidewall, described silicon nitride
Side wall is formed on described beak type sidewall.
Preferably, etch described second silicon nitride layer and form silicon nitride with the inwall at described groove
The step of side wall also includes: after etching described second silicon nitride layer, and in phosphoric acid, corrosion is revised
The thickness of described silicon nitride spacer, to be reduced or eliminated the appearance when described field oxide is formed
Beak and pit.
According to another aspect of the present invention, it is provided that a kind of by make to be formed in aforementioned manners etc.
Flat field oxidation isolation structure.
According to the present invention in one aspect, it is provided that the flat field oxidation isolation structures such as one, bag
Including substrate and the field oxidation isolation being formed in described substrate, it is upper that the oxidation of wherein said field is isolated
Surface and the upper surface flush of described substrate.
The field insulation manufacturing method of the present invention based on traditional local oxidation isolation technology,
It is a difference in that the present invention first forms groove at substrate surface, then forms field oxidation in groove
Layer, can obtain and active area substrate surface by optimizing the thickness of depth of groove and field oxide
Concordant field oxide；It addition, the method provided according to the present invention, the sidewall at groove has nitrogen
The protection of SiClx side wall, it is possible to effectively prevent the lateral oxidation of field oxide, keeps active
District's area is constant.Compared with shallow ditch groove separation process, the field oxidation isolation structure that the present invention provides
Forming method is simple, with low cost.
Accompanying drawing explanation
By description to the embodiment of the present invention referring to the drawings, the present invention above-mentioned and its
He will be apparent from objects, features and advantages.In the drawings, same or similar accompanying drawing mark
Note represents same or like structure or step.
Fig. 1 illustrates according to flat field oxidation isolation such as the formation that one embodiment of the invention provides
The flow chart of method；
Fig. 2 to 9 illustrates in the flow process of the flat field oxidation isolation such as formation according to embodiments of the present invention
The structural section figure that each step is corresponding；And
Figure 10 shows and waits flat field oxidation isolation junction according to what one embodiment of the invention was formed
The sectional view of structure.
Description of reference numerals:
1000, silicon substrate；1002, oxide layer；1004, silicon nitride layer；1006, place；
1008, active area；1010, thermal oxide layer；1012, groove；1014, silicon nitride layer；1016,
Silicon nitride spacer；1018, field oxide.
Detailed description of the invention
Hereinafter, by the specific embodiment shown in accompanying drawing, the present invention is described.But should manage
Solving, these describe the most exemplary, and are not intended to limit the scope of the present invention.Additionally,
In following description, eliminate the description to known features and technology, to avoid unnecessarily obscuring
Idea of the invention.
Rotating fields schematic diagram according to embodiments of the present invention shown in the drawings.These figures are not
It is drawn to scale, the most for purposes of clarity, is exaggerated some details, and may
Eliminate some details.Various regions shown in figure, the shape of layer and they between
Relative size, position relationship are only exemplary, are likely to be due to manufacturing tolerance or technology in reality
Limit and deviation, and those skilled in the art can additionally design tool according to actually required
There are difformity, size, the regions/layers of relative position.
It should be noted that, in the following description, mention fisrt feature second feature it " on " or
" top " both can include the situation that fisrt feature directly contacts with second feature, it is also possible to bag
Include the situation that other features are present between fisrt feature and second feature, i.e. fisrt feature and
Second feature is not likely to be directly contact.
Fig. 1 illustrates according to flat field oxidation isolation such as the formation that one embodiment of the invention provides
The flow chart of method.The method includes:
Step S01: substrate is provided；
Step S02: form silicon oxide layer over the substrate；
Step S03: form the first silicon nitride layer on described silicon oxide layer；
Step S04: described first silicon nitride layer and described silicon oxide layer are patterned, in advance
Determine region and form opening, expose described substrate；
Step S05: remove the part of described substrate in said opening, with the table at described substrate
Face forms groove；
Step S06: form the second silicon nitride layer over the substrate, etches described second silicon nitride
Layer, forms silicon nitride spacer with the inwall at described groove；
Step S07: grow field oxide in described groove；
Step S08: make the surface of the surface described substrate outer with described groove of described field oxide put down
Together；And
Step S09: remove described first silicon nitride layer outside described groove and described silicon oxide layer.
Method based on flat field oxidation isolation such as the formation shown in Fig. 1, below in conjunction with concrete real
Execute example to describe the concrete technology stream of the method for the flat field oxidation isolation such as the formation of the disclosure in detail
Journey.
Fig. 2～9 shows in detail the flat field oxidation detached flows such as formation according to embodiments of the present invention
The sectional view of each step in journey.In the drawings, the substrate of use is silicon substrate.
First, as shown in Figure 2, it is provided that silicon substrate 1000, formed on silicon substrate 1000 surface
Oxide layer 1002, forms silicon nitride layer 1004, then this oxygen graphical in oxide layer 1002
Change layer 1002 and silicon nitride layer 1004, thus on silicon substrate 1000, form place 1006 and have
Source region 1008.According to an embodiment, can be by oxide layer 1002 described in mask lithography
On described silicon substrate 1000, described place 1006 is etched with silicon nitride layer 1004.Certainly,
Those skilled in the art can use other pattern technologies, and the present invention is not limited in this respect.
As in figure 2 it is shown, this place 1006 can be an opening.
Then, as it is shown on figure 3, can on the silicon substrate 1000 include place 1006 such as
Oxidation technology is utilized to grow thermal oxide layer 1010.Described oxidation technology can be to table on silicon substrate 1000
Face carries out the oxidation of certain depth.Preferably, in this embodiment, wet process oxidation technology is used
Growth thermal oxide layer 1010, described wet-oxygen oxidation technique is hydrogen and oxygen at a temperature of 1000 DEG C
Mixed gas in aoxidizeThe silicon substrate 1000 of the degree of depth, is formedThe hot oxygen of thickness
Changing layer, wherein hydrogen is 50% with the volume percent content of oxygen respectively.Meanwhile, at this wet oxygen
In oxidation technology, beak (bird break) can be formed at the two ends of described thermal oxide layer 1010.
Then, as shown in Figure 4, described thermal oxide layer 1010 can be removed, so in place
The surface of silicon of 1006 forms the groove 1012 with certain depth.At a preferred embodiment
In, the degree of depth of described groove 1012 isCan go in the way of utilizing such as wet etching
Except this thermal oxide layer 1010.In one exemplary embodiment, such as volume basis can be used
Than hot oxygen described in Fluohydric acid. (HF) the aqueous solution at room temperature erosion removal that content is 10% to 15%
Change layer 1010, to form described groove 1012.May also take on other modes and remove described hot oxygen
Changing layer, the present invention is not limited in this respect.
Preferably, in this embodiment, the degree of depth of this groove 1012 is the field oxygen that expection is to be formed
Change 3rd/1st to five/2nd of layer thickness.Additionally, as stated above, silicon substrate 1000
Upper surface because thermal oxide layer 1010 growth and some is oxidized, this groove 1012
Then oxidized with the described silicon substrate 1000 surface partial shape of shape is consistent.An exemplary type
In example, the two ends of described groove 1012 can leave the sidewall of bird's beak shape, as shown in Figure 3-4,
But the present invention is not limited in this regard.
Alternatively, it is possible to not necessarily form described thermal oxide layer 1010 but make to exist in other ways
Described groove 1012 is formed on described silicon substrate 1000.In one exemplary embodiment, permissible
The Tetramethylammonium hydroxide (TMAH) using such as volume percent content to be 1% to 15% is water-soluble
Liquid is erosion removal under 50 to 60 DEG C of technological temperaturesThe silicon substrate 1000 of the degree of depth, is formed
HaveThe groove 1012 of the degree of depth.Further, it is also possible to use dry etch process such as sputtering
With ion beam etching, plasma etching (Plasma Etching), high pressure plasma etching, height
Density plasma (HDP) etching and reactive ion etching (RIE) etc., or above-mentioned technique
Combination in any, described place 1006 is removed partial silicon substrate, thus forms described groove
1012。
Then, as it is shown in figure 5, on the surface of whole silicon substrate 1000, be included in described second
Silicon nitride layer surface, described groove 1012 sidewall and bottom, utilize such as boiler tube or other modes
Grown silicon nitride layer 1014.Preferably, the thickness of this silicon nitride layer 1014 isExtremely
In an example, it is also possible to before forming described silicon nitride layer 1014, grow one layer of thin oxygen
Change layer (not shown), it is preferable that the thickness of this thin oxide layer isExtremelyThis thin oxygen
Change layer to can be used to eliminate the stress between silicon nitride layer 1014 and silicon substrate 1000 surface.
Then, as shown in Figure 6, silicon nitride layer 1014 is performed etching.As it can be seen, silicon lining
The silicon nitride layer 1014 of the end 1000 surface flat place is etched completely, and is formed at groove 1012
The silicon nitride layer 1014 of inwall corner then can not be removed by carving completely due to side wall principle, so
Groove 1012 inner wall edge has certain thickness silicon nitride layer 1014 to be retained when, and forms nitrogen
SiClx side wall 1016.In one embodiment, described silicon nitride spacer 1016 is formed at described bird
On nozzle type sidewall.In another embodiment, described silicon nitride spacer 1016 can be formed at institute
State the top of groove inner wall.
Then, as shown in Figure 7, it is possible to use wet etching or other modes are to silicon nitride side
Wall 1016 carries out processing with the thickness of thinning silicon nitride spacer 1016.This is because thicker nitrogen
SiClx side wall 1016 may hinder oxide layer formation on this groove inner wall in subsequent technique,
Thus forming pit at field oxide edge when forming field oxide, it may cause edge electricity
Field is concentrated, and device electrology characteristic declines.According to one embodiment of present invention, phosphorus can be used
Side wall 1016, as etchant solution, is carried out thinning, during corrosion at a temperature of about 165 DEG C by acid
Between according to remove silicon nitride spacer 1016 thickness depending on, it is preferable that silicon nitride spacer 1016
Residual thickness beExtremely
Then, as shown in Figure 8, in groove 1012, (such as growth) field oxide 1018 is formed,
And make upper surface and the upper table of silicon substrate 1000 in active area 1008 of this field oxide 1018
Face is concordant.
According to one embodiment of present invention, by using wet process oxidation technology growth thermal oxide layer
1010, described wet-oxygen oxidation technique is at a temperature of 1000 DEG C in the mixed gas of hydrogen and oxygen
OxidationThe silicon substrate 1000 of the degree of depth, is formedThe thermal oxide layer of thickness. formed with
The field oxide 1018 of silicon substrate upper surface flush in active area, wherein hydrogen and the volume of oxygen
Degree is 50% respectively.
Then, as it is shown in figure 9, remove the silicon nitride layer 1004 on described silicon substrate 1000 surface,
Oxide layer 1002 and silicon nitride spacer 1016, the flat field oxygen isolation structure such as formation.
Figure 10 shows and waits flat field oxidation isolation structure according to what one embodiment of the invention was formed
Sectional view.Such flat field oxidation isolation structure includes substrate and is formed in described substrate
Field oxidation isolation 1018.From accompanying drawing, the upper surface of described field oxidation isolation 1018 is with described
The upper surface flush of substrate active area 1008.
In the method for the flat field oxidation isolation such as this formation that the present invention provides, first remove silicon
The part of substrate top surface forms groove, then uses silicon nitride spacer protection silicon substrate groove side
Wall, finally by flat field oxidation isolation such as field oxide formation.Compared with prior art, originally
The field oxidation isolation forming method of invention is permissible with the thickness of field oxide by optimizing depth of groove
Obtain the field oxide concordant with active area surface of silicon；Additionally, due to recess sidewall has nitrogen
The protection of SiClx side wall, can effectively prevent the lateral oxidation of field oxide, maintain source region face
Long-pending constant.
In the above description, the ins and outs such as the composition of each layer, etching are not made
Detailed description.It should be appreciated to those skilled in the art that can be by of the prior art
Various means, form the layer of required form, region etc..It addition, in order to form same structure,
Those skilled in the art can be devised by side the most identical with process as described above
Method.
Above by reference to embodiments of the invention, the present invention is described.But, these are implemented
The purpose that example is merely to illustrate that, and be not intended to limit the scope of the present invention.The present invention's
Scope is limited by claims and equivalent thereof.Without departing from the scope of the present invention, this area
Technical staff can make a variety of substitutions and modifications, and these substitutions and modifications all should fall in the present invention
Within the scope of.
Claims (10)
1. the method for the flat field such as formation oxidation isolation, it is characterised in that including:
Substrate is provided；
Form silicon oxide layer over the substrate；
Described silicon oxide layer is formed the first silicon nitride layer；
Described first silicon nitride layer and described silicon oxide layer are patterned, in presumptive area shape
Become opening, expose described substrate；
Remove the part of described substrate in said opening, formed recessed with the surface at described substrate
Groove；
Form the second silicon nitride layer over the substrate, etch described second silicon nitride layer, with
The inwall of described groove forms silicon nitride spacer；
Field oxide is grown in described groove；
Make the flush of the surface described substrate outer with described groove of described field oxide；And
Remove described first silicon nitride layer outside described groove and described silicon oxide layer.
Method the most according to claim 1, wherein, removes described lining in said opening
The part at the end with the surface of described substrate formed groove step, including:
Use one or both the combination in dry etch process or wet corrosion technique, in institute
State the part removing described substrate in opening to form described groove.
Method the most according to claim 1, wherein, removes described lining in said opening
The part at the end forms the step of groove, including:
Thermal oxidation technology is used to form thermal oxide layer, described thermal oxide on the substrate of described opening
Layer makes the Part I of described substrate surface oxidized；And
Etch the described Part I of described thermal oxide layer and described substrate, described recessed to be formed
Groove.
Method the most according to claim 2, wherein, described wet corrosion technique includes:
Using volume percent content is that the tetramethylammonium hydroxide aqueous solution of 1% to 15% is at 50 DEG C
The part of substrate described in erosion removal to the technological temperatures of 80 DEG C, to form described groove.
5. according to described method arbitrary in Claims 1-4, wherein, described groove is deep
Degree is 3rd/to five/2nd of described field oxide thickness.
Method the most according to claim 1, the thickness of wherein said second silicon nitride layer isExtremely
Method the most according to claim 1, wherein, forms the second nitrogen over the substrate
The step of SiClx layer, including:
Second is grown over the substrate before forming described second silicon nitride layer over the substrate
Silicon oxide layer, described second silicon oxide layer is used for eliminating described second silicon nitride layer and described substrate
Stress between surface.
Method the most according to claim 1, wherein, described silicon nitride spacer is formed at institute
State the top of groove inner wall.
Method the most according to claim 1, wherein, shape on the inwall at described groove two ends
Becoming to have beak type sidewall, described silicon nitride spacer is formed on described beak type sidewall.
Method the most according to claim 1, wherein, etches described second silicon nitride layer
Form the step of silicon nitride spacer with the inwall at described groove, also include:
After etching described second silicon nitride layer, in phosphoric acid, described silicon nitride spacer is revised in corrosion
Thickness, be reduced or eliminated when described field oxide is formed occur beak and pit.
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| CN105470289B (en) * | 2014-09-10 | 2019-01-01 | 北大方正集团有限公司 | The manufacturing method and semiconductor devices of semiconductor devices |
| CN110047749B (en) * | 2019-03-21 | 2020-12-18 | 中国电子科技集团公司第五十五研究所 | Method for removing silicon nitride in radio frequency LDMOS planarization process |
| CN114335155A (en) * | 2022-03-15 | 2022-04-12 | 北京芯可鉴科技有限公司 | LDMOS device field plate isolation dielectric layer manufacturing method and LDMOS device |
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| CN1832124A (en) * | 2005-03-09 | 2006-09-13 | 海力士半导体有限公司 | Methods for forming isolation films |
| CN1956163A (en) * | 2005-10-27 | 2007-05-02 | 上海华虹Nec电子有限公司 | Process method of implementing shallow ridge separation |
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| US20090098702A1 (en) * | 2007-10-16 | 2009-04-16 | Texas Instruments Incorporated | Method to Form CMOS Circuits Using Optimized Sidewalls |
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| CN1832124A (en) * | 2005-03-09 | 2006-09-13 | 海力士半导体有限公司 | Methods for forming isolation films |
| CN1956163A (en) * | 2005-10-27 | 2007-05-02 | 上海华虹Nec电子有限公司 | Process method of implementing shallow ridge separation |
| CN101211817A (en) * | 2007-12-25 | 2008-07-02 | 上海集成电路研发中心有限公司 | Method for diminishing shallow slot isolation margin depression |
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